CN106684124A - Production method of thin film transistor, thin film transistor and display device - Google Patents
Production method of thin film transistor, thin film transistor and display device Download PDFInfo
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- CN106684124A CN106684124A CN201710056822.5A CN201710056822A CN106684124A CN 106684124 A CN106684124 A CN 106684124A CN 201710056822 A CN201710056822 A CN 201710056822A CN 106684124 A CN106684124 A CN 106684124A
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- 239000010409 thin film Substances 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 112
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 109
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 106
- 238000000034 method Methods 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000002360 preparation method Methods 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims description 46
- 229920002120 photoresistant polymer Polymers 0.000 claims description 37
- 238000000059 patterning Methods 0.000 claims description 28
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 150000001721 carbon Chemical group 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 239000000203 mixture Substances 0.000 abstract description 5
- 239000012212 insulator Substances 0.000 abstract 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 199
- 239000011241 protective layer Substances 0.000 description 26
- 239000011347 resin Substances 0.000 description 21
- 229920005989 resin Polymers 0.000 description 21
- 238000010586 diagram Methods 0.000 description 18
- 230000005611 electricity Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
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- 230000006978 adaptation Effects 0.000 description 6
- 230000002378 acidificating effect Effects 0.000 description 5
- 238000004070 electrodeposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
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- 239000007788 liquid Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
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- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
Abstract
The invention provides a production method of thin film transistor, thin film transistor and display device, which comprises: a grid electrode, an electrode insulator and an active layer are formed successively by composition art; a carbon film is formed and is covered with the active layer and the electrode insulator; an metal film is formed and is covered with the carbon film; and a source electrode and a drain electrode are formed by composition art. The method utilizes the carbon film in active layer production to avoid to hurting the active layer from etchant in the preparation of the source electrode and the drain electrode, improve the manufacture stability of the active layer and TFT manufacture yield rate. Excellent conductivity nature of carbon film can get good break- over among the source electrode, the drain electrode and the active layer, and is also beneficial to form carbon film touch electrode on TFT-LCD substrate to generate touch function of TFT-LCD.
Description
Technical field
The present invention relates to TFT-LCD technical field, more particularly to a kind of preparation method of thin film transistor (TFT), film crystal
Pipe and display device.
Background technology
TFT-LCD (Thin Film Transistor-Liquid Crystal Display) is that current main flow shows
Product, in recent years Ge great panel vendors are all constantly expanding the scale of production, the market demand in recent years with smart mobile phone, TV
Popularization is increasing, and improve production efficiency and the high-quality backboard of production are the keys for dominating the market.
But the active layer such as indium gallium zinc oxide IGZO (Indium Gallium Zinc Oxide), a-Si exists in TFT technology
Stability problem in processing procedure always perplexs the key factor of its volume production, and (Back Channel Etchant carry on the back groove to BCE
Etching) damage of the metal etchants to active layer of TFT of structure be one of the reason for causing TFT processing procedures unstable, existing
Various protection film layer protected effects are less desirable.
The content of the invention
The present invention provides a kind of preparation method of thin film transistor (TFT), transistor and display device, existing each to solve
Plant the less desirable problem of active layer protection film layer protected effect.
In order to solve the above problems, the invention discloses a kind of preparation method of thin film transistor (TFT), including：
Gate electrode, electrode dielectric layer, active layer are sequentially formed on underlay substrate by patterning processes；
Carbon film layer is formed, the carbon film layer is covered on the active layer and the electrode dielectric layer；
Metallic diaphragm is formed, the metallic diaphragm is covered on the carbon film layer；
Source electrode and drain electrode are formed by patterning processes.
Preferably, described formation by patterning processes is also included after source electrode and drain electrode：
Remove the carbon film layer not covered by the source electrode, drain electrode.
Preferably, described formation by patterning processes is also included after source electrode and drain electrode：
Photoetching protection glue-line is covered on the carbon film layer；
Photoresist is formed by patterning processes protect pattern；
Remove and the carbon film layer of pattern covers is not protected by the source electrode, drain electrode and the photoresist；
The photoresist protection pattern is peeled off, in the photoresist protection pattern position carbon film touch control electrode is formed.
Preferably, the formation carbon film layer, the carbon film layer is covered on the active layer and the electrode dielectric layer
Step includes：
Gas particle high velocity bombardment graphite target, sputters graphite target；
The carbon atom for sputtering is deposited on active layer and the electrode dielectric layer and forms carbon film layer.
Preferably, the step of carbon film layer that the removal is not covered by the source electrode, drain electrode, includes：Using oxygen etc.
The carbon film layer that ion(ic) etching is not covered by the source electrode, drain electrode, generates volatility CO2 and/or CO gases in order to discharge.
In order to solve the above problems, the invention also discloses a kind of thin film transistor (TFT), including：Gate electrode, electrode dielectric layer,
Active layer, source electrode and drain electrode, it is characterised in that the thin film transistor (TFT) also includes being arranged on the active layer and the source
Carbon film layer between electrode, drain electrode.
Preferably, also include：The carbon film made with the same patterning processes of the carbon film layer on the electrode dielectric layer
Touch control electrode.
Preferably, the material of the active layer is indium gallium zinc oxide.
In order to solve the above problems, the invention also discloses a kind of display device, including thin film transistor (TFT), the thin film crystalline substance
Body pipe includes gate electrode, electrode dielectric layer, active layer, source electrode and drain electrode, it is characterised in that the thin film transistor (TFT) is also wrapped
Include the carbon film layer being arranged between the active layer and the source electrode, drain electrode.
Preferably, the thin film transistor (TFT) is additionally included on the electrode dielectric layer with the carbon film layer with a composition work
The carbon film touch control electrode that skill makes.
Compared with prior art, the present invention includes advantages below：
By the system of the ARRAY substrates of the preparation method and TFT-LCD of thin film transistor (TFT) provided in an embodiment of the present invention
Preparation Method, one layer of carbon film layer is introduced into when active layer is prepared to avoid the etchant pair in source electrode and drain electrode preparation process
The damage of active layer, improves the process stability of active layer and the yield of TFT processing procedures.
Further, the excellent conductive characteristic of carbon film layer can also realize that source electrode, drain electrode and active layer are good
Conducting.
Further, the excellent conductive characteristic of carbon film layer can also be utilized to form carbon on the underlay substrate of TFT-LCD
Film touch control electrode, so that TFT-LCD is integrated with touch controllable function.
Description of the drawings
The step of Fig. 1 is a kind of preparation method of thin film transistor (TFT) of the embodiment of the present invention one flow chart；
The step of Fig. 2 shows a kind of preparation method of thin film transistor (TFT) of the embodiment of the present invention two flow chart；
Fig. 3 a are the schematic diagrams after formation gate electrode on underlay substrate of the embodiment of the present invention two；
Fig. 3 b be the embodiment of the present invention two be coated with electrode dielectric layer on the underlay substrate with gate electrode after illustrate
Figure；
Fig. 3 c are the schematic diagrams after electrode dielectric layer gate electrode correspondence position forms active layer of the embodiment of the present invention two；
Fig. 4 is the schematic diagram formed after carbon film layer of the embodiment of the present invention two；
Fig. 5 is the schematic diagram after the formation source electrode and drain electrode of embodiment two；
Fig. 6 is one of schematic diagram of ARRAY of TFT-LCD of embodiment two；
Fig. 7 is the integrated touch work surface schematic diagram of carbon film touch control electrode of embodiment two；
Fig. 8 is the two of the schematic diagram of the ARRAY of the TFT-LCD of embodiment two；
Fig. 9 is the three of the schematic diagram of the ARRAY of the TFT-LCD of embodiment two；
Figure 10 is the four of the schematic diagram of the ARRAY of the TFT-LCD of embodiment two；
Figure 11 is the part ARRAY substrate top views for preparing of embodiment two.
Specific embodiment
It is understandable to enable the above objects, features and advantages of the present invention to become apparent from, it is below in conjunction with the accompanying drawings and concrete real
The present invention is further detailed explanation to apply mode.
Embodiment one
With reference to Fig. 1, show the embodiment of the present invention one a kind of thin film transistor (TFT) preparation method the step of flow chart.
The film crystal tube preparation method of the embodiment of the present invention is comprised the following steps：
Step 101：Gate electrode, electrode dielectric layer, active layer are sequentially formed on underlay substrate by patterning processes.
Step 102：Carbon film layer is formed, the carbon film layer is covered on the active layer and the electrode dielectric layer.
Step 103：Metallic diaphragm is formed, the metallic diaphragm is covered on the carbon film layer.
Step 104：Source electrode and drain electrode are formed by patterning processes.
The embodiment of the present invention pass through on the active layer of TFT cover one layer of conduction carbon film layer, both realized active layer with
Turn between source electrode, drain electrode, active layer is protected again, make active layer not by used in source electrode and drain electrode forming process
Etchant is damaged, and improves the stability and yield of TFT processing procedures.
Embodiment two
With reference to Fig. 2, show the embodiment of the present invention two a kind of thin film transistor (TFT) preparation method the step of flow chart.
The film crystal tube preparation method of the embodiment of the present invention is comprised the following steps：
Step 201：Gate electrode, electrode dielectric layer, active layer are sequentially formed on underlay substrate by patterning processes.
In practice, the thin film transistor (TFT) of TFT-LCD is formed on the underlay substrate of LCDs, usual substrate
Substrate is a planar glass substrate.
In embodiments of the present invention, gate electrode 2 can be sequentially formed by patterning processes on underlay substrate 1, electrode is exhausted
Edge layer 4, active layer 5.
Specifically, the gate electrode 2 can be that the electric conductivities such as metal Al, Mo, AlNd alloy, Cu, MoNd alloy are preferable
Metal electrode, it functions as scan line in TFT, realizes the switch and closure of TFT.The electrode dielectric layer 4 generally can be with
It is the SiN of one layer of 3000~5000 angstroms of thicknessxFilm layer, to realize the protection to gate electrode.The active layer 5 is a kind of quasiconductor material
Material, generally can be the a-Si semiconductor layers of 500 angstroms of a layer thickness, when gate electrode 2 controls high level, lead the active layer 5
Logical, when the control low level of gate electrode 2, active layer 5 is not turned on, so as to the effect for realizing switching.
In one preferred embodiment of the invention, the active layer 5 can adopt the higher IGZO of carrier mobility, with
Realize that more preferable display screen refresh rate, display resolution etc. are acted on.
In one preferred embodiment of the invention, the thickness of IGZO can be 400~700 angstroms.
In order that above-mentioned steps become apparent from understanding, below forming gate electrode 2 by patterning processes on underlay substrate 1
As a example by illustrate gate electrode 2 forming process, it is described underlay substrate 1 by patterning processes formation gate electrode 2 process can wrap
Include following sub-step：
S11, forms metallic diaphragm on underlay substrate.
In embodiments of the present invention, sputter (sputtering) technology utilizations gas bombardment gold can be passed through on underlay substrate 1
Category target, forms layer of metal film layer on metal atom sputtering to underlay substrate 1.
S12, in metallic diaphragm photoresist is coated, and exposes to form photoresist protection pattern by mask plate.
In embodiments of the present invention, after metallic diaphragm is formed, photoresist, Ran Houtong can be coated above metallic diaphragm
Cross mask plate to be exposed photoresist, develop, selective to form photoresist protection pattern, the protection pattern is to protect gold
Category film layer.
S13, is not photo-etched the metallic diaphragm that glue protects pattern covers, then stripping photoresist protection using etchant etching
Pattern forms gate electrode.
In embodiments of the present invention, can adopt wet method acidic etchant that the metal of pattern covers is protected to not being photo-etched glue
Film layer is etched, and removal is not photo-etched the metal that glue protects pattern covers, is then peeled off using corrosive liquid after chemical reaction
The photoresist protection pattern, forms gate electrode 2.
It should be noted that forming the process of electrode dielectric layer 4 and active layer 5 in step 201, it is referred to form grid electricity
The forming process of pole 2, it is possible to use technological means commonly used in the art realize that the embodiment of the present invention is not restricted to this.
In implementing, while gate electrode 2 are formed, public electrode 3 is actually yet forms both on underlay substrate.
Sequentially form gate electrode 2 in step 201, electrode dielectric layer 4, the process of active layer 5 can be such as Fig. 3 a, Fig. 3 b, figure
Shown in 3c.
Wherein, Fig. 3 a show and schematic diagram after gate electrode are formed on underlay substrate, and Fig. 3 b are shown with gate electrode
Underlay substrate on be coated with schematic diagram after electrode dielectric layer, Fig. 3 c show and formed in electrode dielectric layer gate electrode correspondence position
Schematic diagram after active layer, wherein 1 is underlay substrate, 2 is gate electrode, and 3 is public electrode, and 4 is electrode dielectric layer, and 5 is active layer.
Step 202：Carbon film layer is formed, the carbon film layer is covered on the active layer and the electrode dielectric layer.
In embodiments of the present invention, in formation gate electrode 2, electrode dielectric layer 4, after active layer 5, can be in the active layer
5 and the electrode dielectric layer 4 on cover one layer of carbon film layer 6, in follow-up work to the protection of active layer.
In one preferred embodiment of the invention, the method for graphite magnetron sputtering can be adopted in active layer and the electricity
Carbon film layer is formed on the insulating barrier of pole, then step 202 can include following sub-step：
S21, gas particle high velocity bombardment graphite target, sputters graphite target.
In embodiments of the present invention, the gas particle in magnetic control sputtering device is formed through electric field acceleration and has high-energy grain
Son, the graphite target of the high energy particle bombardment in sputter equipment, the part carbon atom in target obtains high-energy grain
The energy of son, departs from target material surface and sputters.
Used as a kind of example, the gas particle can be the Ar ions that the Ar pneumoelectrics in magnetic control sputtering device are separated out.
S22, the carbon atom for sputtering is deposited on active layer and the electrode dielectric layer and forms carbon film layer.
In embodiments of the present invention, the carbon atom for departing from target material surface is exhausted with active layer and electrode in sputtering flight course
Edge layer is contacted, and is finally deposited thereon, forms carbon film layer 6.
In one preferred embodiment of the invention, the thickness of the carbon film layer 6 can be 400~700 angstroms.
After step 202, forming the schematic diagram after carbon film layer can be with as shown in figure 4, wherein 6 as carbon film layer.
Step 203：Metallic diaphragm is formed, the metallic diaphragm is covered on the carbon film layer.
In embodiments of the present invention, after carbon film layer is formed, metallic diaphragm can be formed on the carbon film layer, in order to rear
It is continuous to utilize.
In embodiments of the present invention, the material of the metallic diaphragm can be that Al, Mo, AlNd alloy, Cu, MoNd alloy etc. are led
The preferable metal of electrical property, the concrete method for forming metallic diaphragm is referred to step S11, and embodiment of the present invention here is not gone to live in the household of one's in-laws on getting married
State.
Certainly, those skilled in the art can also form metallic diaphragm using additive method on carbon film layer, and the present invention is real
Apply example not to be restricted this.
In one preferred embodiment of the invention, the thickness of the metallic diaphragm can be 3000~4000 angstroms.
Step 204：Source electrode and drain electrode are formed by patterning processes.
In embodiments of the present invention, after metallic diaphragm is formed, source electrode 7 and drain electrode can be formed by patterning processes
8, the patterning processes are referred to the process of step S12-S13, photoresist are coated in metal film layer surface first, through mask plate
Photoresist is exposed, is developed, it is selective to form photoresist protection pattern, then by wet method acidic etchant to not by
The metal of photoresist protection pattern protection is removed, and finally by corrosive liquid stripping photoresist pattern is protected, and ultimately forms source
Electrode 7 and drain electrode 8.
It should be noted that in this step 204, acidic etchant removes the metal for not being photo-etched glue protection pattern protection
During, do not receive with the carbon film layer 6 of acidic etchant reaction, therefore the active layer 5 due to covering one layer on active layer 5
The protection of carbon film layer 6, will not be etched agent damage, improve the stability of active layer 5.
After step 204, form source electrode and the schematic diagram after drain electrode can be with as shown in figure 5, wherein 7 be source electricity
Pole, 8 is drain electrode.
In embodiments of the present invention, for the complete ARRAY substrates for preparing TFT-LCD, it is still desirable to unnecessary carbon
Film layer is removed, then can also include step 205 after step 204.
Step 205：Remove the carbon film layer not covered by the source electrode, drain electrode.
In embodiments of the present invention, carbon film layer 6 in source electrode and drain electrode etching process procedure except protecting active layer 5
Outside, it also has an effect just to can be achieved on the electrical connection of active layer 5 and source electrode 7 and drain electrode 8, it is therefore desirable to not
It is removed by the carbon film layer that the source electrode 7, drain electrode 8 are covered.
In one preferred embodiment of the invention, can be using oxygen plasma etching not by the source electrode 7, electric leakage
The carbon film layer 6 that pole 8 covers, generates volatility CO2And/or CO gases are in order to discharging.
In one preferred embodiment of the invention, it is possible to use part carbon film layer forms carbon film touch control electrode with TFT-
Integrated touch controllable function in LCD, then step 205 can also use step 205 ' replace.
Step 205 ':Photoetching protection glue-line is covered on the carbon film layer；Photoresist protection figure is formed by patterning processes
Case；Remove and the carbon film layer of pattern covers is not protected by the source electrode, drain electrode and the photoresist；Peel off the photoresist
Protection pattern, in the photoresist protection pattern position carbon film touch control electrode is formed.
In embodiments of the present invention, in order to make full use of carbon film layer to form carbon film touch control electrode 9, can apply on carbon film layer
Photoetching protection glue-line is covered, is then exposed by mask plate, development, it is selective to form photoresist protection pattern, then go
Except not by the source electrode 7, drain electrode 8 and the photoresist protect pattern covers carbon film layer, finally by corrosive liquid with
The photoresist protection pattern is peeled off in photoresist after chemical reaction, and in photoresist protection pattern position carbon film touch control electrode 9 is formed,
The carbon film touch control electrode 9 of formation is to the integrated touch controllable functions of TFT-LCD.
Through step 205 ' after, the schematic diagram of the ARRAY of TFT-LCD can be with as shown in fig. 6, wherein 9 be carbon film touch-control electricity
Pole.
In practice, the touch controllable function of display screen is realized typically by following principle：When user touches capacitance plate
When, now finger forms a coupled capacitor with touch screen work surface, because being connected to high-frequency signal on work surface, then finger is inhaled
Put the electric current of a very little away, flow out in this electric current electrode respectively from four angles of screen, and flow through four electricity in theory
The electric current of pole is proportional to the distance of finger to corner, and controller draws position by calculating four the accurate of current ratio
Put.
In embodiments of the present invention, the work surface to form carbon film touch control electrode 9 as touch screen is exactly based on so as to realize
The integrated touch function in TFT-LCD display screens.
The integrated touch work surface of carbon film touch control electrode 9 is as shown in fig. 7, each work surface and X touch sensing sensor, Y
Touch sensing sensor is connected, and these touch-controls sensor realizes that position of touch is calculated by detector unit and control unit.
It should be noted that above-mentioned removal is not covered by the source electrode 7, drain electrode 8 and photoresist protection pattern
The method of the carbon film layer of lid is referred to step 205, and the embodiment of the present invention will not be described here.
In embodiments of the present invention, for the complete ARRAY substrates for preparing TFT-LCD, in step 205 ' after may be used also
To include：
Step 206：Touch in the source electrode, the active layer, the drain electrode, the electrode dielectric layer, the carbon film
The first protective layer is covered on control electrode, the public electrode.
In embodiments of the present invention, complete to make source electrode 7, active layer 5, drain electrode 8, carbon film touch control electrode 9, electrode
After insulating barrier 4, public electrode 3, need to cover the first protective layer 10 thereon, to the dielectric layer as pixel capacitance simultaneously
Protection source electrode 7 and drain electrode 8.
In implementing, can using PECVD (Plasma Enhanced Chemical Vapor Deposition,
Plasma enhanced chemical vapor deposition) method is in source electrode 7, active layer 5, drain electrode 8, electrode dielectric layer 4, carbon film touch control electrode
9th, deposition covers first protective layer 10 on public electrode 3, and generally first protective layer 10 can be SiNx、SiO2Etc. insulating properties
Preferably material can constitute.
In one preferred embodiment of the invention, the thickness of first protective layer 10 can be 1000~3000 angstroms.
Step 207：Insulating resin layer is covered on first protective layer.
Generally, due to the thickness of the first protective layer 10 is not enough, pixel capacitance value is insufficient to allow in a suitable electric capacity
Value.
Therefore, in embodiments of the present invention, one layer of insulating organic resin tree can be covered with the coating on the first protective layer
Lipid layer 11 (is also Resin layers), to the capacitance for adjusting pixel capacitance.
In one preferred embodiment of the invention, the thickness of the insulating resin layer 11 can be 1.7 μm or so.
Step 208：In the drain electrode position, adaptation runs through the first of the insulating resin layer and first protective layer
Via, in the public electrode position, adaptation runs through the insulating resin layer, first protective layer, the electrode dielectric layer
The second via.
In embodiments of the present invention, in order that pixel electrode ITO (Indium Tin Oxide, indium tin oxide) thin film,
Public electrode ito thin film 13 is turned on respectively with drain electrode 8, public electrode 3, can be in the first protective layer 10, insulating resin layer 11
It is respectively provided with the first via 14, the second via 15.
Specifically, arranging the method for the first via 14 and the second conducting 15 can pass through exposure by via mask plate,
Development, the method for etching is formed through the insulating resin layer 11 and first protective layer 10 in the position of the drain electrode 8
First via 14, forms through the insulating resin layer 11, first protective layer 10, described in the public electrode position
Second via 15 of electrode dielectric layer 4, specific exposure, development, the process for etching are similar with step S12-S13, the present invention
Therefore not to repeat here for embodiment.
Step 209：The first pixel electrode with drain electrode conducting is formed by patterning processes along first via
Indium tin oxide ito thin film, along second via public electrode with public electrode conducting is formed by patterning processes
Ito thin film.
In embodiments of the present invention, in the position of the drain electrode 8, adaptation runs through the insulating resin layer 11 and described first
First via 14 of protective layer 10, in the position of the public electrode 3, adaptation is protected through the insulating resin layer 11, described first
After sheath 10, the second via 15 of the electrode dielectric layer 4, patterning processes shape can be passed through along first via 14
Into the first pixel electrode indium tin oxide ito thin film 12 turned on drain electrode 8, along second via 15 composition is passed through
Technique forms the public electrode ito thin film 13 with public electrode conducting.
Specifically, the first pixel electrode ito thin film 12 can by the following method be formed：
S31, ito thin film layer is formed in insulating resin layer and on the first via inwall.
In embodiments of the present invention, can pass through in insulating resin layer 11 and on the inwall of the first via 14
Sputter (sputtering) technology utilizations gas bombard ITO target, ITO atom sputterings to 11 layers of insulating resin and first turn on
Ito thin film layer is formed on the inwall of hole 14.
S32, in ito thin film layer photoresist is coated, while exposing to form photoresist protection pattern by mask plate.
In embodiments of the present invention, after ito thin film layer is formed, photoresist can be coated above ito thin film layer, then
Photoresist is exposed by mask plate, is developed, selective to form photoresist protection pattern, the protection pattern is to protect
Ito thin film layer.
S33, using etchant etching the metallic diaphragm that glue protects pattern covers is not photo-etched, while stripping photoresist protection
Pattern forms the first pixel electrode ito thin film.
In embodiments of the present invention, can adopt wet method acidic etchant that the ITO of pattern covers is protected to not being photo-etched glue
Thin layer is etched, and removal is not photo-etched the ito thin film that glue protects pattern covers, while using corrosive liquid after chemical reaction
The photoresist protection pattern is peeled off, the first pixel electrode ito thin film with the conducting of drain electrode 8 along the first via 14 is formed
12。
Certainly, only as a kind of example, those skilled in the art can be formed above-mentioned forming process with by other means
First pixel electrode ito thin film 12, the embodiment of the present invention is not restricted to this.
It should be noted that the formation of the forming process of public electrode ito thin film 13 and the first pixel electrode ito thin film 12
Process is similar to, and therefore not to repeat here for the embodiment of the present invention.
After step 209, the schematic diagram of the ARRAY of TFT-LCD can with as shown in figure 8, wherein 10 are the first protective layer,
11 is insulating resin layer, and 12 is the first pixel electrode ito thin film, and 13 is public electrode ito thin film, and 14 is the first via, 15
For the second via.
Step 210：In the insulating resin layer, the first pixel electrode ito thin film and public electrode ito thin film overlying
Cover the second protective layer for reserving opening for first via and the second via.
In embodiments of the present invention, in order to preferably protect pixel electrode ito thin film and public electrode ito thin film 13, also
The second protection can be covered on insulating resin layer 11, the first pixel electrode ito thin film 12 and public electrode ito thin film 13
Layer 16, second protective layer 16 is that the first via 14 and the second via 15 have reserved opening, in order to be subsequently formed second
Pixel electrode ito thin film 17, generally second protective layer can be SiNx、SiO2Etc. the preferable material composition of insulating properties.
It should be noted that the second protective layer 16 can be with identical with the material of the first protective layer 10, it is also possible to different.
The concrete method for forming reserved opening is referred to step 208, and therefore not to repeat here for the embodiment of the present invention.
After step 210, the schematic diagram of the ARRAY of TFT-LCD can be with as shown in figure 9, wherein 16 be the second protective layer.
Step 211：The second pixel with the first pixel electrode ito thin film conducting is formed along first via
Electrode ITO thin film.
In implementing, due to may the first via 14 depth it is excessive, therefore just have in step 209 and be pre-formed
The first pixel electrode ito thin film 12, on the basis of the first pixel electrode ito thin film 12 has been defined, can be using similar
The method of S31-S32 forms the second pixel electrode ITO along first via 14 and the conducting of first electrode ito thin film 12
Thin film 17.
After step 211, the schematic diagram of the ARRAY of TFT-LCD can be as shown in Figure 10, wherein 17 is the second pixel electricity
Pole ito thin film.
During above-mentioned steps 206- step 211, pixel electrode ito thin film divide into preparation process twice, so
Purpose be to preferably prepare pixel electrode ito thin film in technique.
So far, the complete ARRAY substrates for being prepared for TFT-LCD, the part ARRAY substrates top view for preparing is such as
Shown in Figure 11, wherein 7 is source electrode, 5 is active layer, and 8 is drain electrode, and 9 is carbon film touch control electrode.
Certainly, those skilled in the art can be with according to practical situation, still using once preparing pixel electrode ito thin film
Technique, then step 206- step 211 can use following steps 206 '-step 211 ' replace：
Step 206 '：Touch in the source electrode, the active layer, the drain electrode, the electrode dielectric layer, the carbon film
The first protective layer is covered on control electrode；
Step 207 '：Insulating resin layer is covered on first protective layer；
Step 208 '：In the drain electrode position, adaptation runs through the first of the insulating resin layer and first protective layer
Via, in the public electrode position, adaptation runs through the insulating resin layer, first protective layer, the electrode dielectric layer
The second via；
Step 209 '：The public electrode indium tin oxide ITO with public electrode conducting is formed along second via
Thin film；
Step 210 '：Be formed as first via on the insulating resin layer and the public electrode ito thin film
With the second protective layer that the second via reserves opening；
Step 211 '：The pixel electrode ito thin film with drain electrode conducting is formed along first via.
It should be noted that above-mentioned steps 206 '-step 211 ' realize process with reference to step 206- step 211, this
Therefore not to repeat here for bright embodiment.
It should be noted that above-mentioned steps 206- step 211 or step 206 '-step 211 ' be in step 205 ' after
Additional step, similarly, after step 205 can also be described with reference to step 206- step 211 or step 206 '-step 211 '
Method, realize the preparation process of the ARRAY substrates of complete TFT-LCD, therefore not to repeat here for the embodiment of the present invention.
By the system of the ARRAY substrates of the preparation method and TFT-LCD of thin film transistor (TFT) provided in an embodiment of the present invention
Preparation Method, one layer of carbon film layer is introduced into when active layer is prepared to avoid the etchant pair in source electrode and drain electrode preparation process
The damage of active layer, improves the process stability of active layer and the yield of TFT processing procedures.
Further, the excellent conductive characteristic of carbon film layer can also realize that source electrode, drain electrode and active layer are good
Conducting.
Further, the excellent conductive characteristic that can also utilize carbon film layer forms carbon film in the underlay substrate of TFT-LCD
Touch control electrode, so that TFT-LCD is integrated with touch controllable function.
Embodiment three
The embodiment of the invention also discloses a kind of thin film transistor (TFT), including：Gate electrode, electrode dielectric layer, active layer, source electricity
Pole and drain electrode, the thin film transistor (TFT) also includes the carbon film layer being arranged between the active layer and the source electrode, drain electrode.
In a kind of preferred embodiment of the embodiment of the present invention, thin film transistor (TFT) be additionally included on the electrode dielectric layer with
The carbon film touch control electrode that the same patterning processes of the carbon film layer make.
In a kind of preferred embodiment of the embodiment of the present invention, the material of active layer is indium gallium zinc oxide.
Example IV
The embodiment of the invention also discloses a kind of display device, including thin film transistor (TFT), the thin film transistor (TFT) includes grid electricity
Pole, electrode dielectric layer, active layer, source electrode and drain electrode, the thin film transistor (TFT) also includes being arranged on the active layer and described
Carbon film layer between source electrode, drain electrode.
In a kind of preferred embodiment of the embodiment of the present invention, thin film transistor (TFT) be additionally included on the electrode dielectric layer with
The carbon film touch control electrode that the same patterning processes of the carbon film layer make.
For aforesaid each method embodiment, in order to be briefly described, therefore it is all expressed as a series of combination of actions, but
It is that those skilled in the art should know, the present invention is not limited by described sequence of movement, because according to the present invention, certain
A little steps can adopt other orders or while carry out.Secondly, those skilled in the art also should know, be retouched in description
The embodiment stated belongs to preferred embodiment, and involved action and the module not necessarily present invention is necessary.
Each embodiment in this specification is described by the way of progressive, what each embodiment was stressed be with
The difference of other embodiment, between each embodiment identical similar part mutually referring to.
Finally, in addition it is also necessary to explanation, herein, such as first and second or the like relational terms be used merely to by
One entity or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or operation
Between there is any this actual relation or order.And, term " including ", "comprising" or its any other variant meaning
Covering including for nonexcludability, so that a series of process, method, commodity or equipment including key elements not only includes that
A little key elements, but also including other key elements being not expressly set out, or also include for this process, method, commodity or
The intrinsic key element of equipment.In the absence of more restrictions, the key element for being limited by sentence "including a ...", does not arrange
Except also there is other identical element in including the process of the key element, method, commodity or equipment.
Above to a kind of preparation method of thin film transistor (TFT) provided by the present invention, thin film transistor (TFT) and display device,
It is described in detail, specific case used herein is set forth to the principle and embodiment of the present invention, above reality
The explanation for applying example is only intended to help and understands the method for the present invention and its core concept；Simultaneously for the general technology of this area
Personnel, according to the thought of the present invention, will change in specific embodiments and applications, in sum, this theory
Bright book content should not be construed as limiting the invention.
Claims (10)
1. a kind of thin film transistor (TFT), including：Gate electrode, electrode dielectric layer, active layer, source electrode and drain electrode, it is characterised in that
The thin film transistor (TFT) also includes the carbon film layer being arranged between the active layer and the source electrode, drain electrode.
2. thin film transistor (TFT) according to claim 1, it is characterised in that also include：With institute on the electrode dielectric layer
State carbon film touch control electrode of the carbon film layer with a patterning processes making.
3. thin film transistor (TFT) according to claim 1 and 2, it is characterised in that the material of the active layer is indium gallium zinc oxygen
Compound.
4. a kind of preparation method of thin film transistor (TFT), it is characterised in that methods described includes：
Gate electrode, electrode dielectric layer, active layer are sequentially formed on underlay substrate by patterning processes；
Carbon film layer is formed, the carbon film layer is covered on the active layer and the electrode dielectric layer；
Metallic diaphragm is formed, the metallic diaphragm is covered on the carbon film layer；
Source electrode and drain electrode are formed by patterning processes.
5. method according to claim 4, it is characterised in that it is described by patterning processes formed source electrode and drain electrode it
Also include afterwards：
Remove the carbon film layer not covered by the source electrode, drain electrode.
6. method according to claim 4, it is characterised in that it is described by patterning processes formed source electrode and drain electrode it
Also include afterwards：
Photoetching protection glue-line is covered on the carbon film layer；
Photoresist is formed by patterning processes protect pattern；
Remove and the carbon film layer of pattern covers is not protected by the source electrode, drain electrode and the photoresist；
The photoresist protection pattern is peeled off, in the photoresist protection pattern position carbon film touch control electrode is formed.
7. the method according to claim 4 or 5 or 6, it is characterised in that the formation carbon film layer, the carbon film layer is covered
Step on the active layer and the electrode dielectric layer includes：
Gas particle high velocity bombardment graphite target, sputters graphite target；
The carbon atom for sputtering is deposited on active layer and the electrode dielectric layer and forms carbon film layer.
8. method according to claim 5, it is characterised in that the removal is not covered by the source electrode, drain electrode
The step of carbon film layer, includes：
The carbon film layer not covered by the source electrode, drain electrode using oxygen plasma etching, generates volatility CO2And/or CO gas
Body is in order to discharging.
9. a kind of display device, including thin film transistor (TFT), the thin film transistor (TFT) include gate electrode, electrode dielectric layer, active layer,
Source electrode and drain electrode, it is characterised in that the thin film transistor (TFT) also includes being arranged on the active layer and the source electrode, leakage
Carbon film layer between electrode.
10. display device according to claim 9, it is characterised in that the thin film transistor (TFT) is additionally included in the electrode
The carbon film touch control electrode made with the same patterning processes of the carbon film layer on insulating barrier.
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| CN107369719A (en) * | 2017-08-25 | 2017-11-21 | 华南理工大学 | A kind of oxide thin film transistor fine copper composite construction source-drain electrode and preparation method thereof |
| CN108958536A (en) * | 2018-03-28 | 2018-12-07 | 京东方科技集团股份有限公司 | Touch-control and display driver integrate mould group and its manufacturing method, electronic equipment |
| CN111554749A (en) * | 2020-05-14 | 2020-08-18 | 京东方科技集团股份有限公司 | Thin film transistor, preparation method thereof, display substrate and display device |
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| CN108958536A (en) * | 2018-03-28 | 2018-12-07 | 京东方科技集团股份有限公司 | Touch-control and display driver integrate mould group and its manufacturing method, electronic equipment |
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| CN111554749A (en) * | 2020-05-14 | 2020-08-18 | 京东方科技集团股份有限公司 | Thin film transistor, preparation method thereof, display substrate and display device |
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