CN106684065A - 一种集成式Mini整流桥新结构及其制作工艺 - Google Patents
一种集成式Mini整流桥新结构及其制作工艺 Download PDFInfo
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Abstract
本发明提供了一种集成式Mini整流桥新结构及其制作工艺。集成式Mini整流桥新结构包括塑封体,塑封体内封装有处于同一平面内的四个引线框架;第一引线框架与第三引线框架固设于同一载体上,作为交流引脚,第二引线框架与第四引线框架固设于同一载体上,作为正、负极引脚;第二引线框架上固定设有两个二极管芯片,顶面均为P型,分别通过导线连接第一、第三引线框架;第四引线框架上固定设有两个二极管芯片,顶面均为N型,分别通过导线连接第一、第三引线框架。本发明还提供了该集成式Mini整流桥新结构的制作工艺。本发明结构紧凑、体积小,工艺与现有的工艺方法不同。本发明适用于任意PCB电路板。
Description
技术领域
本发明属于电子器件领域,具体地说是一种集成式Mini整流桥新结构。本发明还提供了该集成式Mini整流桥新结构的制作工艺。
背景技术
随着电子行业的不断发展,整流桥器件的应用也不断扩展。但现有技术中要求电子产品不断小型化,因此同样要求构成电子器件的各种模块也不断小型化。而现有技术中的整流桥封装结构大多采用上下两层的结构,其中每层分别两颗二极管芯片,导致最终封装厚度较大,占用线路板空间,不易小型化封装,散热欠佳。
为了克服上述的缺陷,现有技术对整流桥的封装结构进行了改进,如图1所示:包括有第一至第四二极管芯片四个芯片与位于同一平面内的第一至第四引线框架四个引线框架,其中第一二极管芯片、第二二极管芯片分设于第一、第二引线框架上,另外第三、第四二极管芯片共同设于第四引线框架上,第一二极管芯片、第二二极管芯片的焊盘分别通过导线连接第三引线框架,第三二极管芯片通过导线连接第一引线框架,第四二极管芯片通过导线连接第二引线框架。这样的设置方式令整体的整流桥相对上下两层结构的整流桥体积更小,厚度也更薄,但此种封装结构的整流桥还存在以下的缺陷:
四个芯片分设在三个引线框架上,布局仍然不够紧凑。
此外,现有技术中整流桥的焊接工艺均为一面焊接,使得四颗二极管芯片构成的整流桥结构在空间上不得不堆叠,造成整体的整流桥体积大。
发明内容
本发明要解决的技术问题,是提供一种集成式Mini整流桥新结构,所述一种集成式Mini整流桥新结构在结构上更紧凑,所占用的体积更小。
为解决上述技术问题,本发明所采取的技术方案是:
一种集成式Mini整流桥新结构,它包括塑封体,所述封装体内封装有处于同一平面内的第一引线框架、第二引线框架、第三引线框架、第四引线框架;
所述第一引线框架与第三引线框架固设于同一载体上,作为交流引脚,第二引线框架与第四引线框架固设于同一载体上,作为正、负极引脚;
所述第二引线框架上固定设有两个二极管芯片,顶面均为P型,分别通过导线连接第一引线框架、第三引线框架;
所述第四引线框架上固定设有两个二极管芯片,顶面均为N型,分别通过导线连接第一引线框架、第三引线框架。
作为限定:所述第一引线框架与第三引线框架的载体全部封装于塑封体内,第二引线框架与第四引线框架的载体的上半部分封装于塑封体内、而载体下半部分外露于塑封体。
第二种限定:所述第二引线框架与第四引线框架上的二极管芯片均通过二极管底面设置的粘接料固定设于相应的引线框架上,且二极管芯片分别与所在的引线框架电连接,所述粘接料为导电胶或软焊料。
第三种限定:所述导线均为铜线,在二极管芯片以及第一、第三引线框架上分别设有焊盘,所述铜线的一端连接二极管芯片上的焊盘,另一端连接引线框架上的焊盘。
作为对本发明中二极管芯片的限定:所述所有二极管芯片均为GPP二极管芯片。
作为对本发明中塑封体的限定:所述塑封体为环氧树脂构成的具有空腔的壳体。
本发明还提供了上述一种集成式Mini整流桥新结构的制作工艺,包括依次进行的以下步骤:
1)对整片硅片进行好坏的测试,并将检测出的坏片进行标记;
2)将硅片底面贴于蓝膜上,划成一个个小块,并将正面标记的坏芯片挑出;
3)将步骤2)中好的芯片的顶面贴上蓝膜,并将芯片上下颠倒,去掉之前底面上的蓝膜;
4)利用机器抓取步骤3)中的芯片,并直接将芯片的底面焊接到底座上;
5)引线键合用金线将引线框架的引脚和芯片的焊盘连接起来;
6)用环氧树脂将二极管芯片及用于承载芯片的引线框架一起塑封起来,保护芯片,之后激光打字;
7)将步骤6)中引脚之间的连筋切开,然后进行引脚成型,得到一种集成式Mini整流桥新结构;
8)最终对步骤7)中的一种集成式Mini整流桥新结构进行测试,并将好的产品编袋。
由于采用了上述的技术方案,本发明与现有技术相比,所取得的技术进步在于:
(1)本发明的所有二极管芯片和引线框架均位于同一平面上,令整体整流桥结构的封装厚度更小,体积也更小,布局更加紧凑;
(2)本发明的同一引线框架上的两颗二极管芯片极性朝向一致,方便生产;
(3)本发明作为正、负极的第二引线框架和第四引线框架架的载体下半部分外露于塑封体,在安装时直接与PCB板接触,增强导热,且简化了安装流程;
(4)本发明的塑封体采用环氧树脂制成,散热性强,对整个整流桥结构的散热具有促进作用。
综上所述,本发明结构紧凑、体积小,使用安装方便。
本发明适用于任意PCB电路板。
本发明下面将结合具体实施例作进一步详细说明。
附图说明
图1为现有技术中Mini整流桥的结构示意图;
图2为本发明实施例1的俯视图;
图3为本发明实施例1的主视图;
图4为本发明实施例1的左视图;
图5为本发明实施例1的仰视图。
图中:1-1、第一引线框架,1-2、第二引线框架,1-3、第三引线框架,1-4、第四引线框架,2-1、第一芯二极管片,2-2、第二二极管芯片,2-3、第三二极管芯片,2-4、第四二极管芯片,3粘接料,4、导线,5、焊盘,6、塑封体。
具体实施方式
实施例1 一种集成式Mini整流桥新结构
本实施例提供了一种集成式Mini整流桥新结构,如图2、3、4、5所示,它包括:
塑封体6,所述封装体6为环氧树脂构成的具有空腔的壳体,在塑封体6的空腔内封装有第一引线框架1-1、第二引线框架1-2、第三引线框架1-3、第四引线框架1-4,且所有的引线框架均处于同一平面内。为了令本实施例的引线框架具有安装基础,所述第一引线框架1-1与第三引线框架1-3作为交流引脚固设于同一载体上,第二引线框架1-2与第四引线框架1-4作为正、负极引脚固设于同一载体上,而第一引线框架1-1与第三引线框架1-3的载体全部封装于塑封体6的空腔内,第二引线框架1-2与第四引线框架1-4载体的上半部封装于塑封体6空腔内、而载体下半部分外露于塑封体6设置。
本实施例作为核心的二极管芯片采用GPP二极管芯片,分别固设于第二引线框架1-2与第四引线框架1-4上,且第二引线框架1-2与第四引线框架1-4上分别固定设有两个二极管芯片,其中固设于第二引线框架1-2上的二极管芯片顶面为P型,固设于第四引线框架1-4上的二极管芯片顶面为N型。具体设置为:第二引线框架1-2上通过粘接料3固定设置有第一二极管芯片2-1与第二二极管芯片2-2,第四引线框架1-4上通过粘接料3固定设置有第三二极管芯片2-3与第四二极管芯片2-4,且第一二极管芯片2-1、第二二极管芯片2-2与第二引线框架1-2电连接,第三二极管芯片2-3、第四二极管芯片2-4与第四引线框架1-4电连接,为了实现各个芯片与相应引线框架的电连接关系,本实施例中的粘接料3采用现有技术中的导电胶或软焊料。
而为了令各个芯片与第一引线框架1-1以及第三引线框架1-3连接形成连接关系,本实施例中的第一二极管芯片2-1、第二二极管芯片2-2分别通过导线4与分别第一引线框架1-1第三引线框架1-3相连,而第三二极管芯片2-3与第四二极管芯片2-4则通过导线4分别与第一引线框架1-1、第三引线框架1-3相连,且本实施例中的导线采用导电性能极佳的铜线,同时在二极管芯片以及第一引线框架1-1、第三引线框架1-3上分别设有焊盘5,所述铜线的一端连接二极管芯片上的焊盘5,另一端连接引线框架上的焊盘5。
实施例2 一种集成式Mini整流桥新结构的制作工艺
本实施例提供了一种集成式Mini整流桥新结构的制作工艺,用于制作实施例1中所述的一种集成式Mini整流桥新结构,它包括以下步骤:
1)对整片硅片进行好坏的测试,并将检测出的坏片进行标记;
本步骤中对坏片进行标记时可以用磁性墨水对坏片进行标记,也可以利用计算机建立一张芯片位置和测试结构的计算机图形,利用计算机将坏的芯片在计算机图形的坐标上进行标记;
2)将硅片底面贴于蓝膜上,划成一个个小块,并将正面标记的坏芯片挑出;
如果步骤1)中采用的是直接对坏片用磁性墨水进行标记,则本步骤中划片时将硅片完全划穿;而如果步骤1)中利用计算机对芯片进行的标记,则本步骤中采用划片深度四分之一到三分之一的划片工艺,这样不完全划穿可以提高翻膜时的可靠性;
3)将步骤2)中好的芯片的顶面贴上蓝膜,并将芯片上下颠倒,去掉之前底面上的蓝膜;
如果步骤1)中利用计算机对芯片进行的标记,那么本步骤中需要将坏的芯片利用磁性墨水打点标记,然后裂片,并用机器取出坏的芯片,得到顶面能够焊接的、且好的GPP二极管芯片;
4)利用机器抓取步骤3)中的芯片,并直接将芯片的底面焊接到底座上;
本步骤中需要顶针从蓝膜下面将好的芯片往上顶,同时机器的真空吸嘴将芯片往上吸,抓取步骤3)顶面焊接的二极管芯片,然后将芯片的顶面焊接在引线框架的底座上;
5)引线键合用铜线将引线框架的引脚和芯片的焊盘连接起来;
6)用环氧树脂将二极管芯片及用于承载芯片的引线框架一起塑封起来,保护芯片,之后激光打字;
7)将步骤6)中银浆之间的引脚切开,然后进行引脚成型,得到一种集成式Mini整流桥新结构;
8)最终对步骤7)中的一种集成式Mini整流桥新结构进行测试,并将好的产品编袋。
Claims (9)
1.一种集成式Mini整流桥新结构,其特征在于:它包括塑封体,所述封装体内封装有处于同一平面内的第一引线框架、第二引线框架、第三引线框架、第四引线框架;
所述第一引线框架与第三引线框架固设于同一载体上,作为交流引脚,第二引线框架与第四引线框架固设于同一载体上,作为正、负极引脚;
所述第二引线框架上固定设有两个二极管芯片,顶面均为P型,分别通过导线连接第一引线框架、第三引线框架;
第四引线框架上固定设有两个二极管芯片,顶面均为N型,分别通过导线连接第一引线框架、第三引线框架。
2.根据权利要求1所述的一种集成式Mini整流桥新结构,其特征在于:所述第一引线框架与第三引线框架的载体全部封装于塑封体内,第二引线框架与第四引线框架的载体的上半部分封装于塑封体内、而载体下半部分外露于塑封体。
3.根据权利要求1或2所述的一种集成式Mini整流桥新结构,其特征在于:所述第二引线框架与第四引线框架上的二极管芯片均通过二极管底面设置的粘接料固定设于相应的引线框架上,且二极管芯片分别与所在的引线框架电连接,所述粘接料为导电胶或软焊料。
4.根据权利要求1或2所述的一种集成式Mini整流桥新结构,其特征在于:所述导线均为铜线,在二极管芯片以及第一、第三引线框架上分别设有焊盘,所述铜线的一端连接二极管芯片上的焊盘,另一端连接引线框架上的焊盘。
5.根据权利要求3所述的一种集成式Mini整流桥新结构,其特征在于:所述导线均为铜线,在二极管芯片以及第一、第三引线框架上分别设有焊盘,所述铜线的一端连接二极管芯片上的焊盘,另一端连接引线框架上的焊盘。
6.根据权利要求1、2或5中任意一项所述的一种集成式Mini整流桥新结构,其特征在于:所述所有二极管芯片均为GPP二极管芯片,所述塑封体为环氧树脂构成的具有空腔的壳体。
7.根据权利要求3所述的一种集成式Mini整流桥新结构,其特征在于:所述所有二极管芯片均为GPP二极管芯片,所述塑封体为环氧树脂构成的具有空腔的壳体。
8.根据权利要求4所述的一种集成式Mini整流桥新结构,其特征在于:所述所有二极管芯片均为GPP二极管芯片,所述塑封体为环氧树脂构成的具有空腔的壳体。
9.一种如权利要求1至8中任意一项所述的一种集成式Mini整流桥新结构的制作工艺,其特征在于:包括依次进行的以下步骤:
1)对整片硅片进行好坏的测试,并将检测出的坏片进行标记;
2)将硅片底面贴于蓝膜上,划成一个个小块,并将正面标记的坏芯片挑出;
3)将步骤2)中好的芯片的顶面贴上蓝膜,并将芯片上下颠倒,去掉之前底面上的蓝膜;
4)利用机器抓取步骤3)中的芯片,并直接将芯片的底面焊接到底座上;
5)引线键合用铜线将引线框架的引脚和芯片的焊盘连接起来;
6)用环氧树脂将二极管芯片及用于承载芯片的引线框架一起塑封起来,保护芯片,之后激光打字;
7)将步骤6)中引脚之间的连筋切开,然后进行引脚成型,得到一种集成式Mini整流桥新结构;
8)最终对步骤7)中的一种集成式Mini整流桥新结构进行测试,并将好的产品编袋。
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