CN106678715A - LED road lamp for municipal engineering - Google Patents

LED road lamp for municipal engineering Download PDF

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Publication number
CN106678715A
CN106678715A CN201610548116.8A CN201610548116A CN106678715A CN 106678715 A CN106678715 A CN 106678715A CN 201610548116 A CN201610548116 A CN 201610548116A CN 106678715 A CN106678715 A CN 106678715A
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silicon
silicon chip
black
layer
led
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不公告发明人
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S9/00—Lighting devices with a built-in power supply; Systems employing lighting devices with a built-in power supply
    • F21S9/02—Lighting devices with a built-in power supply; Systems employing lighting devices with a built-in power supply the power supply being a battery or accumulator
    • F21S9/03—Lighting devices with a built-in power supply; Systems employing lighting devices with a built-in power supply the power supply being a battery or accumulator rechargeable by exposure to light
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
    • F21W2131/00—Use or application of lighting devices or systems not provided for in codes F21W2102/00-F21W2121/00
    • F21W2131/10—Outdoor lighting
    • F21W2131/103—Outdoor lighting of streets or roads
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/72—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps in street lighting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention relates to an LED road lamp for municipal engineering. The LED road lamp comprises a transparent lamp cover, a plurality of detachable LED light sources, a power source, a control switch and a sensor, wherein the power source is connected with the sensor and the control switch, and is connected with the detachable LED light sources; each of the light sources comprises a solar battery assembly, each solar battery assembly comprises a black silicon solar battery module and an accumulator; a black silicon structure is manufactured from Cu/Ni alloy films through etching by an auxiliary chemical method, so that the reflectivity to sunlight can be reduced to 1% or below, the sunlight is absorbed to the greatest extent, and the composition of carriers is effectively reduced; besides, a SiO2/Al2O3/SiNX lamination passive film is adopted, so that the service life of the carriers is effectively prolonged; and the solar converting efficiency of the LED road lamp is 20.78%, and the reflectivity to the sunlight is about 0.84%. The LED road lamp disclosed by the invention is high in converting efficiency and good in repeatability; the purpose of high-efficiency solar utilization is achieved; the energy resource consumption is reduced; the manufacturing cost is low; and the LED road lamp has many great application prospects.

Description

A kind of LED street lamp for municipal works
Technical field
The application is related to lighting field, more particularly to a kind of LED street lamp for municipal works.
Background technology
Street lamp, is the light fixture due to providing illumination functions to road.LED street lamp has environment friendly and pollution-free, little power consumption, light efficiency High the advantages of.
With fossil energy worsening shortages and environmental pollution increase, make full use of including the renewable energy including solar energy Increasingly paid close attention to by people in source.At present industry solar cell production cost is higher, and the popularization for constraining solar electrical energy generation should With.Therefore in order that solar cell in the world interior energy is used widely, we must be improved using new technology of preparing With the new solar cell of research and development, further reduce production cost and improve photoelectric transformation efficiency.
The content of the invention
To overcome problem present in correlation technique, the application to provide a kind of LED street lamp for municipal works.
The invention provides a kind of LED street lamp for municipal works, it is characterised in that：The LED street lamp includes transparent Lampshade, Dismantlable LED light, power supply and sensor；The light source is provided with multiple；The power supply and sensor and control Switch connection, the power supply is connected with Dismantlable LED light.
Preferably, the power supply is made up of solar module；The Dismantlable LED light is connected with each other by multiple LED composition, multiple lamp beads are provided with the LED.
Preferably, the quantity of the lamp bead is 50~60.
Preferably, the solar module includes black silicon solar cell module and accumulator；The accumulator can be with The electric energy that storage black silicon solar module is produced；The black silicon solar cell module is that this is black based on the black silicon structure of P-type silicon piece Silicon structure is prepared by the auxiliary chemical method etching using Cu/Ni alloy films on the basis of silicon chip surface pyramid structure；It is described black Diffusion layer, photoactive layer, SiO are followed successively by above silicon structure2/Al2O3/SiNXOverlayer passivation film, buffer electrode layer and Top electrode； The photoactive layer is doped with Fe3O4Magnetic nano-particle；The black silicon structure is in turn below buffer electrode layer, bottom electrode；Institute State SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.
Wherein, the making of the black silicon solar cell module is comprised the following steps：
Step one, cleaning silicon chip：Certain size P-type silicon piece is taken, silicon chip is immersed in into sulphuric acid:Hydrogen peroxide=3:2 (volumes Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed into 15vol%HF solution, then using deionized water pair Silicon chip rinses 2min, then silicon chip is placed in the HF solution of 0.5wt.% and rinses 1min, to remove silicon chip surface autoxidation Layer, last deionized water rinses 2min；
Step 2, prepares pyramid structure：The isopropyl alcohol mixture of the NaOH and 7vol.% of 2.8wt.% is prepared, will Silicon chip is placed in mixed solution the ultrasonic erosion 1h at 80 DEG C, and in silicon chip surface pyramid antireflection structure is obtained；
Step 3, prepares black silicon structure：Silicon chip is positioned in magnetic control sputtering device, 1.2 × 10 are evacuated to-4Below Pa, Simultaneously magnetron sputtering C u targets, Ni targets, power is respectively 140W, 120W, and magnetron sputtering C u targets, Ni target times are 5min so as to shape Into Cu/Ni alloy films；The silicon chip that above-mentioned sputtering there are Cu/Ni alloy films is positioned over into the mixed solution of 2.7M H2O2 and 8.3M HF In, corrode 100min at 92 DEG C, corrode silicon chip surface and go out silicon nanostructure, i.e., black silicon structure is molten with hydrochloric acid after corroding Liquid is cleaned to it, removes the Ni granules of residual, last deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell：
1) by the silicon chip for preparing, diffusion layer being diffuseed to form using phosphorus oxychloride liquid source, diffusion temperature is 800 DEG C~ 1150℃；Etched using the plasma periphery of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, make upper and lower two Face separates, and then removes phosphorosilicate glass to Wafer Cleaning 30s using low concentration hydrofluoric acid solution (3vol%)；
2) by Fe3O4:P3HT:PCBM=0.018:1:Fe3O4 magnetic nano-particles are doped to light and are lived by 0.8 mass ratio In property layer solution, doping content is 1%, and then silicon chip is placed in above-mentioned photoactive layer solution, sonic oscillation 30min, in silicon Piece surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particles are prepared as follows using liquid phase coprecipitation method：By 0.85g (3.1mmol) FeCl36H2O and 0.3g (1.5mmol) FeCl24H2O, is dissolved under nitrogen protection in 200ml ultra-pure waters and makes iron salt Mixed solution；At 80 DEG C, the Dilute Ammonia Solution that 2ml mass concentrations are 25% is slowly added to iron salt and is mixed by vigorous magnetic stirring In closing solution, when solution value is increased to 7~8, iron salt hydrolysis produce the Fe3O4 magnetic nano-particles of a large amount of black, continue to drip Hydro-oxidation helium to pH=9 reacts 3h, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating Out, milli-Q water, in being then dispersed in 200ml ultra-pure waters, add 2ml mass concentrations be 25% Dilute Ammonia Solution and 1ml Oleic acid, in 80 DEG C of constant temperature vigorous magnetic stirring 1h.The concentrated hydrochloric acid that mass concentration is 36% is slowly added in most backward solution, Until produce lumpy precipitate in flask, by lumpy precipitate with, again with ethanol purge 3 times, removing unreacted oil after Magnet collection Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) using high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into into high temperature oxidation furnace, into stove oxygen is passed through, make silicon In oxidation atmosphere, surface is gradually oxidized and generates 5~10nm thick SiO piece2, then the silicon chip is put into into magnetic control sputtering device In, one layer of Al is deposited with first using reaction magnetocontrol sputtering method2O3Then thin film, thickness about 40nm recycles PECVD deposition One layer of silicon nitride so as to form SiO2/Al2O3/SiNXOverlayer passivation film；
4) buffer electrode layer is prepared：Using radio frequency magnetron sputtering method, one is deposited in silicon chip upper and lower surface respectively Layer Cr films, thickness is 100nm, used as the cushion of upper/lower electrode；
5) electrode is prepared：Using the method for silk screen printing, the upper/lower electrode and back of the body electricity of black silicon solar cell are made respectively , finally black silicon solar cell is sintered, make electrode form good Ohmic contact with silicon, then connect a wire to up and down Electrode.
The technical scheme that embodiments herein is provided can include following beneficial effect：
1. The embodiment provides a kind of LED street lamp for municipal works, because the street lamp employs the sun The power supply that energy battery modules operate as it, and the solaode module is made up of black silicon solar cell, is preparing black silicon During solaode, black silicon structure is prepared using Cu/Ni alloy films auxiliary chemical method etching, using the method in pyramid The silicon chip surface of structure corrodes the nanostructured for appropriate depth, the reflectance of visible ray is effectively reduced to less than 1%, while energy Enough recombination rates for effectively reducing carrier, while using SiO2/Al2O3/SiNXThin film is effectively reduced as overlayer passivation film The reflectance of sunlight, improves the life-span of carrier.And then the extinction using the solaode made by black silicon structure is imitated Rate is improved, and the light source service life for making the LED street lamp is improved.
2. The embodiment provides a kind of LED street lamp for municipal works, adopts in its power supply for using Black silicon solar cell, due to adopting SiO2/Al2O3/SiNXUsed as overlayer passivation film, the structural membrane is effectively increased thin film In the life-span of carrier, in combination with the use of buffer electrode layer, the efficiency of solaode is effectively improved, test obtains highest Conversion efficiency of solar cell reaches 20.78%.Further, the power supply service life for making LED street lamp extends, and saves replacing battery Required man power and material's cost；Additionally, during solaode is prepared, due to Fe3O4 magnetic nano-particles being mixed It is miscellaneous to P3HT:In PCBM photoactive layers, increase free carrier concentration, improve the short circuit current of battery, improve black silicon solar The energy conversion efficiency of battery；Simple structure, simple production process, low cost, therefore, while battery conversion efficiency is lifted Manufacturing cost is reduced, with applying to generate potentiality in practice on a large scale.And then make the cost of manufacture of LED street lamp and use Efficiency is all greatly enhanced.
The aspect and advantage that the application is added will be set forth in part in the description, and partly will become from the following description Obtain substantially, or recognized by the practice of the application.It should be appreciated that the general description of the above and detailed description hereinafter are only It is exemplary and explanatory, the application can not be limited.
Description of the drawings
Accompanying drawing herein is merged in description and constitutes the part of this specification, shows the enforcement for meeting the present invention Example, and be used to explain the principle of the present invention together with description.
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the preparation technology of the black silicon solar cell module that the present invention according to an exemplary embodiment is adopted FB(flow block).
Fig. 3 is the silicon chip surface pyramid structure schematic diagram that the present invention is adopted.
Fig. 4 is the black silicon structure surface film schematic diagram that the present invention is adopted.
Specific embodiment
Here exemplary embodiment will be illustrated in detail, its example is illustrated in the accompanying drawings.Explained below is related to During accompanying drawing, unless otherwise indicated, the same numbers in different accompanying drawings represent same or analogous key element.Following exemplary embodiment Described in embodiment do not represent and the consistent all embodiments of the present invention.Conversely, they be only with it is such as appended The example of the consistent apparatus and method of some aspects described in detail in claims, the present invention.
In the description of the present application, it should be noted that unless otherwise prescribed and limit, term " installation ", " connected ", " connection " should be interpreted broadly, for example, it may be mechanically connected or electrical connection, or the connection of two element internals, can Being to be joined directly together, it is also possible to be indirectly connected to by intermediary, for the ordinary skill in the art, can basis Concrete condition understands the concrete meaning of above-mentioned term.
With fossil energy worsening shortages and environmental pollution increase, make full use of including the renewable energy including solar energy Increasingly paid close attention to by people in source.At present industry solar cell production cost is higher, and the popularization for constraining solar electrical energy generation should With.Therefore in order that solar cell in the world interior energy is used widely, we must be improved using new technology of preparing With the new solar cell of research and development, further reduce production cost and improve photoelectric transformation efficiency.
Solar cell is the device for luminous energy being converted into electric energy, in the compounds solar cell of volume production, cadmium telluride The conversion efficiency highest of solar cell, but the cadmium used in its raw material is harmful substance, and environmental pollution is likely to result in after use, because This limits widely using for such battery.Crystal silicon cell is a kind of most widely used at present and the most ripe battery, but Be existing crystal silicon cell due to complex structure, producting process difficulty is larger, high cost, is not applied to large-scale In commercial production.Therefore, lifted battery conversion efficiency while reduce manufacturing cost be only propulsion photovoltaic application key because Element.
High-efficiency and low-cost solar cell technology is to popularize the key factor of photovoltaic generation.The discovery of black silicon and black silion cell The development of technology, the research and development for low-cost high-efficiency battery provide effective resolving ideas.Because special nano surface is tied Structure makes the Carrier recombination of black silion cell far above common monocrystalline silicon battery, so as to cause current black silion cell efficiency not reach To the expection of people.
Research discovery, by Fe3O4 magnetic nano-particles P3HT is doped to:In PCBM photoactive layers, because Fe3O4 magnetic is received Rice corpuscles have superparamagnetism, and the magnetic field produced under electromagnetic interaction improves P3HT:Triplet state in PCBM photoactive layers Ratio shared by exciton, produces more free carriers, increases free carrier concentration, can improve the short circuit electricity of battery Stream, and then improve the energy conversion efficiency of polymer solar battery.
Embodiment 1：
Fig. 1 is a kind of structural representation of the LED street lamp for municipal works according to an exemplary embodiment, such as Shown in Fig. 1, the LED street lamp includes Transparent lamp shade, Dismantlable LED light 4, power supply 1, controlling switch 3 and sensor 2；Institute State Dismantlable LED light 4 be provided with it is multiple；The power supply 1 is connected with sensor 2 and controlling switch 3, the power supply 1 with can Dismountable LED light source 4 connects.In the present embodiment, preferably, power supply is made up of solar module described in 1；It is described can Dismountable LED light source 4 is made up of multiple LEDs being connected with each other, and multiple lamp beads is provided with the LED, in the present embodiment In, the quantity of lamp bead is 50~60.Further, the quantity of the lamp bead is 55, and is distributed in detachable LED light side by side On source 4.
Preferably, the solar module includes black silicon solar cell module and accumulator；The black silicon sun Energy battery module is the black silicon structure based on P-type silicon piece as shown in Figure 3, and the black silicon structure is in silicon chip surface pyramid structure On the basis of using Cu/Ni alloy films auxiliary chemical method etching prepare, in the present embodiment, the pyramid structure be Corrode in the isopropyl alcohol mixture of the NaOH and 7vol.% of 2.8wt.% and obtain.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO are followed successively by above the black silicon structure2/Al2O3/SiNXIt is folded Layer passivating film 03, buffer electrode layer 04 and Top electrode 05；The photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；It is described black Silicon structure is in turn below buffer electrode layer, bottom electrode；The SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its In, the diffusion layer 01 is to spread source for doping P elements using phosphorus oxychloride.
Fig. 2 be a kind of black silicon that adopted of the LED street lamp for municipal works according to an exemplary embodiment too The preparation method of positive energy battery module, referring to Fig. 2, comprises the following steps：
Step one, cleaning silicon chip：Certain size P-type silicon piece is taken, silicon chip is immersed in into sulphuric acid:Hydrogen peroxide=3:2 (volumes Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed into 15vol%HF solution, then using deionized water pair Silicon chip rinses 2min, then silicon chip is placed in the HF solution of 0.5wt.% and rinses 1min, to remove silicon chip surface autoxidation Layer, last deionized water rinses 2min；
Step 2, prepares pyramid structure：The isopropyl alcohol mixture of the NaOH and 7vol.% of 2.8wt.% is prepared, will Silicon chip is placed in mixed solution the ultrasonic erosion 1h at 80 DEG C, and in silicon chip surface pyramid antireflection structure is obtained；
Step 3, prepares black silicon structure：Silicon chip is positioned in magnetic control sputtering device, 1.2 × 10 are evacuated to-4Below Pa, Simultaneously magnetron sputtering C u targets, Ni targets, power is respectively 140W, 120W, and magnetron sputtering C u targets, Ni target times are 5min so as to shape Into Cu/Ni alloy films；The silicon chip that above-mentioned sputtering there are Cu/Ni alloy films is positioned over into the mixed solution of 2.7M H2O2 and 8.3M HF In, corrode 100min at 92 DEG C, corrode silicon chip surface and go out silicon nanostructure, i.e., black silicon structure is molten with hydrochloric acid after corroding Liquid is cleaned to it, removes the Ni granules of residual, last deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell：
1) by the silicon chip for preparing, diffusion layer being diffuseed to form using phosphorus oxychloride liquid source, diffusion temperature is 800 DEG C~ 1150℃；Etched using the plasma periphery of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, make upper and lower two Face separates, and then removes phosphorosilicate glass to Wafer Cleaning 30s using low concentration hydrofluoric acid solution (3vol%)；
2) by Fe3O4:P3HT:PCBM=0.018:1:Fe3O4 magnetic nano-particles are doped to light and are lived by 0.8 mass ratio In property layer solution, doping content is 1%, and then silicon chip is placed in above-mentioned photoactive layer solution, sonic oscillation 30min, in silicon Piece surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particles are prepared as follows using liquid phase coprecipitation method：By 0.85g (3.1mmol) FeCl36H2O and 0.3g (1.5mmol) FeCl24H2O, is dissolved under nitrogen protection in 200ml ultra-pure waters and makes iron salt Mixed solution；At 80 DEG C, the Dilute Ammonia Solution that 2ml mass concentrations are 25% is slowly added to iron salt and is mixed by vigorous magnetic stirring In closing solution, when solution value is increased to 7~8, iron salt hydrolysis produce the Fe3O4 magnetic nano-particles of a large amount of black, continue to drip Hydro-oxidation helium to pH=9 reacts 3h, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating Out, milli-Q water, in being then dispersed in 200ml ultra-pure waters, add 2ml mass concentrations be 25% Dilute Ammonia Solution and 1ml Oleic acid, in 80 DEG C of constant temperature vigorous magnetic stirring 1h.The concentrated hydrochloric acid that mass concentration is 36% is slowly added in most backward solution, Until produce lumpy precipitate in flask, by lumpy precipitate with, again with ethanol purge 3 times, removing unreacted oil after Magnet collection Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) using high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into into high temperature oxidation furnace, into stove oxygen is passed through, make silicon In oxidation atmosphere, surface is gradually oxidized and generates 5~10nm thick SiO piece2, then the silicon chip is put into into magnetic control sputtering device In, one layer of Al is deposited with first using reaction magnetocontrol sputtering method2O3Then thin film, thickness about 40nm recycles PECVD deposition One layer of silicon nitride so as to form SiO2/Al2O3/SiNXOverlayer passivation film；
4) buffer electrode layer is prepared：Using radio frequency magnetron sputtering method, one is deposited in silicon chip upper and lower surface respectively Layer Cr films, thickness is 100nm, used as the cushion of upper/lower electrode；
5) electrode is prepared：Using the method for silk screen printing, the upper/lower electrode and back of the body electricity of black silicon solar cell are made respectively , finally black silicon solar cell is sintered, make electrode form good Ohmic contact with silicon, then connect a wire to up and down Electrode.
Test result：
The black silion cell characteristic of condition is irradiated in AM1.5 standard analogs light source：
Open-circuit voltage is 0.965V, and short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell is to too The reflectance of sunlight is 0.84%.
The carrier lifetime of battery is measured using QSSPC, as injection carrier concentration △ n=1015cm-3When, effective minority Carrier lifetime is 10.9 μ s.
It is 20.78% that test obtains the solar energy conversion efficiency of the LED street lamp, the reflectance about 0.84% to sunlight, Through 3000 retests, transformation efficiency variable quantity is less than 9%, and the high conversion efficiency of the LED street lamp is reproducible.
Embodiment 2
Fig. 1 is a kind of structural representation of the LED street lamp for municipal works according to an exemplary embodiment, such as Shown in Fig. 1, the LED street lamp includes Transparent lamp shade, Dismantlable LED light 4, power supply 1, controlling switch 3 and sensor 2；Institute State Dismantlable LED light 4 be provided with it is multiple；The power supply 1 is connected with sensor 2 and controlling switch 3, the power supply 1 with can Dismountable LED light source 4 connects.In the present embodiment, preferably, power supply is made up of solar module described in 1；It is described can Dismountable LED light source 4 is made up of multiple LEDs being connected with each other, and multiple lamp beads is provided with the LED, in the present embodiment In, the quantity of lamp bead is 50~60.Further, the quantity of the lamp bead is 55, and is distributed in detachable LED light side by side On source 4.
Preferably, the solar module includes black silicon solar cell module and accumulator；The black silicon sun Energy battery module is the black silicon structure based on P-type silicon piece as shown in Figure 3, and the black silicon structure is in silicon chip surface pyramid structure On the basis of using Cu/Ni alloy films auxiliary chemical method etching prepare, in the present embodiment, the pyramid structure be Corrode in the isopropyl alcohol mixture of the NaOH and 7vol.% of 2.8wt.% and obtain.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO are followed successively by above the black silicon structure2/Al2O3/SiNXIt is folded Layer passivating film 03, buffer electrode layer 04 and Top electrode 05；The photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；It is described black Silicon structure is in turn below buffer electrode layer, bottom electrode；The SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its In, the diffusion layer 01 is to spread source for doping P elements using phosphorus oxychloride.
Fig. 2 be a kind of black silicon that adopted of the LED street lamp for municipal works according to an exemplary embodiment too The preparation method of positive energy battery module, referring to Fig. 2, comprises the following steps：
Step one, cleaning silicon chip：Certain size P-type silicon piece is taken, silicon chip is immersed in into sulphuric acid:Hydrogen peroxide=3:2 (volumes Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed into 15vol%HF solution, then using deionized water pair Silicon chip rinses 2min, then silicon chip is placed in the HF solution of 0.5wt.% and rinses 1min, to remove silicon chip surface autoxidation Layer, last deionized water rinses 2min；
Step 2, prepares pyramid structure：The isopropyl alcohol mixture of the NaOH and 7vol.% of 2.8wt.% is prepared, will Silicon chip is placed in mixed solution the ultrasonic erosion 1h at 80 DEG C, and in silicon chip surface pyramid antireflection structure is obtained；
Step 3, prepares black silicon structure：Silicon chip is positioned in magnetic control sputtering device, 1.2 × 10 are evacuated to-4Below Pa, Simultaneously magnetron sputtering C u targets, Ni targets, power is respectively 140W, 120W, and magnetron sputtering C u targets, Ni target times are 5min so as to shape Into Cu/Ni alloy films；The silicon chip that above-mentioned sputtering there are Cu/Ni alloy films is positioned over into the mixed solution of 2.7M H2O2 and 8.3M HF In, corrode 100min at 92 DEG C, corrode silicon chip surface and go out silicon nanostructure, i.e., black silicon structure is molten with hydrochloric acid after corroding Liquid is cleaned to it, removes the Ni granules of residual, last deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell：
1) by the silicon chip for preparing, diffusion layer being diffuseed to form using phosphorus oxychloride liquid source, diffusion temperature is 800 DEG C~ 1150℃；Etched using the plasma periphery of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, make upper and lower two Face separates, and then removes phosphorosilicate glass to Wafer Cleaning 30s using low concentration hydrofluoric acid solution (3vol%)；
2) by Fe3O4:P3HT:PCBM=0.018:1:Fe3O4 magnetic nano-particles are doped to light and are lived by 0.8 mass ratio In property layer solution, doping content is 1%, and then silicon chip is placed in above-mentioned photoactive layer solution, sonic oscillation 30min, in silicon Piece surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particles are prepared as follows using liquid phase coprecipitation method：By 0.85g (3.1mmol) FeCl36H2O and 0.3g (1.5mmol) FeCl24H2O, is dissolved under nitrogen protection in 200ml ultra-pure waters and makes iron salt Mixed solution；At 80 DEG C, the Dilute Ammonia Solution that 2ml mass concentrations are 25% is slowly added to iron salt and is mixed by vigorous magnetic stirring In closing solution, when solution value is increased to 7~8, iron salt hydrolysis produce the Fe3O4 magnetic nano-particles of a large amount of black, continue to drip Hydro-oxidation helium to pH=9 reacts 3h, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating Out, milli-Q water, in being then dispersed in 200ml ultra-pure waters, add 2ml mass concentrations be 25% Dilute Ammonia Solution and 1ml Oleic acid, in 80 DEG C of constant temperature vigorous magnetic stirring 1h.The concentrated hydrochloric acid that mass concentration is 36% is slowly added in most backward solution, Until produce lumpy precipitate in flask, by lumpy precipitate with, again with ethanol purge 3 times, removing unreacted oil after Magnet collection Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) using high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into into high temperature oxidation furnace, into stove oxygen is passed through, make silicon In oxidation atmosphere, surface is gradually oxidized and generates 5~10nm thick SiO piece2, then the silicon chip is put into into magnetic control sputtering device In, one layer of Al is deposited with first using reaction magnetocontrol sputtering method2O3Then thin film, thickness about 40nm recycles PECVD deposition One layer of silicon nitride so as to form SiO2/Al2O3/SiNXOverlayer passivation film；
4) buffer electrode layer is prepared：Using radio frequency magnetron sputtering method, one is deposited in silicon chip upper and lower surface respectively Layer Cr films, thickness is 100nm, used as the cushion of upper/lower electrode；
5) electrode is prepared：Using the method for silk screen printing, the upper/lower electrode and back of the body electricity of black silicon solar cell are made respectively , finally black silicon solar cell is sintered, make electrode form good Ohmic contact with silicon, then connect a wire to up and down Electrode.
Test result：
The black silion cell characteristic of condition is irradiated in AM1.5 standard analogs light source：
Short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell reflectance is 1.5%.Use QSSPC measures the carrier lifetime of battery, as injection carrier concentration △ n=1015cm-3When, effective minority carrier lifetime is 10.9μs。
It is 21.78% that test obtains the solar energy conversion efficiency of the LED street lamp, reflectance about 1.5%, the Jing to sunlight 3000 retests are crossed, transformation efficiency variable quantity is less than 10%, and the high conversion efficiency of the LED street lamp is reproducible.
Embodiment 3
Fig. 1 is a kind of structural representation of the LED street lamp for municipal works according to an exemplary embodiment, such as Shown in Fig. 1, the LED street lamp includes Transparent lamp shade, Dismantlable LED light 4, power supply 1, controlling switch 3 and sensor 2；Institute State Dismantlable LED light 4 be provided with it is multiple；The power supply 1 is connected with sensor 2 and controlling switch 3, the power supply 1 with can Dismountable LED light source 4 connects.In the present embodiment, preferably, power supply is made up of solar module described in 1；It is described can Dismountable LED light source 4 is made up of multiple LEDs being connected with each other, and multiple lamp beads is provided with the LED, in the present embodiment In, the quantity of lamp bead is 50~60.Further, the quantity of the lamp bead is 55, and is distributed in detachable LED light side by side On source 4.
Preferably, the solar module includes black silicon solar cell module and accumulator；The black silicon sun Energy battery module is the black silicon structure based on P-type silicon piece as shown in Figure 3, and the black silicon structure is in silicon chip surface pyramid structure On the basis of using Cu/Ni alloy films auxiliary chemical method etching prepare, in the present embodiment, the pyramid structure be Corrode in the isopropyl alcohol mixture of the NaOH and 7vol.% of 2.8wt.% and obtain.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO are followed successively by above the black silicon structure2/Al2O3/SiNXIt is folded Layer passivating film 03, buffer electrode layer 04 and Top electrode 05；The photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；It is described black Silicon structure is in turn below buffer electrode layer, bottom electrode；The SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its In, the diffusion layer 01 is to spread source for doping P elements using phosphorus oxychloride.
Fig. 2 be a kind of black silicon that adopted of the LED street lamp for municipal works according to an exemplary embodiment too The preparation method of positive energy battery module, referring to Fig. 2, comprises the following steps：
Step one, cleaning silicon chip：Certain size P-type silicon piece is taken, silicon chip is immersed in into sulphuric acid:Hydrogen peroxide=3:2 (volumes Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed into 15vol%HF solution, then using deionized water pair Silicon chip rinses 2min, then silicon chip is placed in the HF solution of 0.5wt.% and rinses 1min, to remove silicon chip surface autoxidation Layer, last deionized water rinses 2min；
Step 2, prepares pyramid structure：The isopropyl alcohol mixture of the NaOH and 7vol.% of 2.8wt.% is prepared, will Silicon chip is placed in mixed solution the ultrasonic erosion 1h at 80 DEG C, and in silicon chip surface pyramid antireflection structure is obtained；
Step 3, prepares black silicon structure：Silicon chip is positioned in magnetic control sputtering device, 1.2 × 10 are evacuated to-4Below Pa, Simultaneously magnetron sputtering C u targets, Ni targets, power is respectively 140W, 120W, and magnetron sputtering C u targets, Ni target times are 5min so as to shape Into Cu/Ni alloy films；The silicon chip that above-mentioned sputtering there are Cu/Ni alloy films is positioned over into the mixed solution of 2.7M H2O2 and 8.3M HF In, corrode 100min at 92 DEG C, corrode silicon chip surface and go out silicon nanostructure, i.e., black silicon structure is molten with hydrochloric acid after corroding Liquid is cleaned to it, removes the Ni granules of residual, last deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell：
1) by the silicon chip for preparing, diffusion layer being diffuseed to form using phosphorus oxychloride liquid source, diffusion temperature is 800 DEG C~ 1150℃；Etched using the plasma periphery of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, make upper and lower two Face separates, and then removes phosphorosilicate glass to Wafer Cleaning 30s using low concentration hydrofluoric acid solution (3vol%)；
2) by Fe3O4:P3HT:PCBM=0.018:1:Fe3O4 magnetic nano-particles are doped to light and are lived by 0.8 mass ratio In property layer solution, doping content is 1%, and then silicon chip is placed in above-mentioned photoactive layer solution, sonic oscillation 30min, in silicon Piece surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particles are prepared as follows using liquid phase coprecipitation method：By 0.85g (3.1mmol) FeCl36H2O and 0.3g (1.5mmol) FeCl24H2O, is dissolved under nitrogen protection in 200ml ultra-pure waters and makes iron salt Mixed solution；At 80 DEG C, the Dilute Ammonia Solution that 2ml mass concentrations are 25% is slowly added to iron salt and is mixed by vigorous magnetic stirring In closing solution, when solution value is increased to 7~8, iron salt hydrolysis produce the Fe3O4 magnetic nano-particles of a large amount of black, continue to drip Hydro-oxidation helium to pH=9 reacts 3h, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating Out, milli-Q water, in being then dispersed in 200ml ultra-pure waters, add 2ml mass concentrations be 25% Dilute Ammonia Solution and 1ml Oleic acid, in 80 DEG C of constant temperature vigorous magnetic stirring 1h.The concentrated hydrochloric acid that mass concentration is 36% is slowly added in most backward solution, Until produce lumpy precipitate in flask, by lumpy precipitate with, again with ethanol purge 3 times, removing unreacted oil after Magnet collection Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) using high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into into high temperature oxidation furnace, into stove oxygen is passed through, make silicon In oxidation atmosphere, surface is gradually oxidized and generates 5~10nm thick SiO piece2, then the silicon chip is put into into magnetic control sputtering device In, one layer of Al is deposited with first using reaction magnetocontrol sputtering method2O3Then thin film, thickness about 40nm recycles PECVD deposition One layer of silicon nitride so as to form SiO2/Al2O3/SiNXOverlayer passivation film；
4) buffer electrode layer is prepared：Using radio frequency magnetron sputtering method, one is deposited in silicon chip upper and lower surface respectively Layer Cr films, thickness is 100nm, used as the cushion of upper/lower electrode；
5) electrode is prepared：Using the method for silk screen printing, the upper/lower electrode and back of the body electricity of black silicon solar cell are made respectively , finally black silicon solar cell is sintered, make electrode form good Ohmic contact with silicon, then connect a wire to up and down Electrode.
Test result：
The black silion cell characteristic of condition is irradiated in AM1.5 standard analogs light source：
Open-circuit voltage is 0.965V, and short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell reflection Rate is 1.32%.The carrier lifetime of battery is measured using QSSPC, as injection carrier concentration △ n=1015cm-3When, effectively Minority carrier lifetime is 10.9 μ s.
It is 22.78% that test obtains the solar energy conversion efficiency of the LED street lamp, the reflectance about 1.32% to sunlight, Through 3000 retests, transformation efficiency variable quantity is less than 11%, and the high conversion efficiency of the LED street lamp is reproducible.
Embodiment 4
Fig. 1 is a kind of structural representation of the LED street lamp for municipal works according to an exemplary embodiment, such as Shown in Fig. 1, the LED street lamp includes Transparent lamp shade, Dismantlable LED light 4, power supply 1, controlling switch 3 and sensor 2；Institute State Dismantlable LED light 4 be provided with it is multiple；The power supply 1 is connected with sensor 2 and controlling switch 3, the power supply 1 with can Dismountable LED light source 4 connects.In the present embodiment, preferably, power supply is made up of solar module described in 1；It is described can Dismountable LED light source 4 is made up of multiple LEDs being connected with each other, and multiple lamp beads is provided with the LED, in the present embodiment In, the quantity of lamp bead is 50~60.Further, the quantity of the lamp bead is 55, and is distributed in detachable LED light side by side On source 4.
Preferably, the solar module includes black silicon solar cell module and accumulator；The black silicon sun Energy battery module is the black silicon structure based on P-type silicon piece as shown in Figure 3, and the black silicon structure is in silicon chip surface pyramid structure On the basis of using Cu/Ni alloy films auxiliary chemical method etching prepare, in the present embodiment, the pyramid structure be Corrode in the isopropyl alcohol mixture of the NaOH and 7vol.% of 2.8wt.% and obtain.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO are followed successively by above the black silicon structure2/Al2O3/SiNXIt is folded Layer passivating film 03, buffer electrode layer 04 and Top electrode 05；The photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；It is described black Silicon structure is in turn below buffer electrode layer, bottom electrode；The SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its In, the diffusion layer 01 is to spread source for doping P elements using phosphorus oxychloride.
Fig. 2 be a kind of black silicon that adopted of the LED street lamp for municipal works according to an exemplary embodiment too The preparation method of positive energy battery module, referring to Fig. 2, comprises the following steps：
Step one, cleaning silicon chip：Certain size P-type silicon piece is taken, silicon chip is immersed in into sulphuric acid:Hydrogen peroxide=3:2 (volumes Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed into 15vol%HF solution, then using deionized water pair Silicon chip rinses 2min, then silicon chip is placed in the HF solution of 0.5wt.% and rinses 1min, to remove silicon chip surface autoxidation Layer, last deionized water rinses 2min；
Step 2, prepares pyramid structure：The isopropyl alcohol mixture of the NaOH and 7vol.% of 2.8wt.% is prepared, will Silicon chip is placed in mixed solution the ultrasonic erosion 1h at 80 DEG C, and in silicon chip surface pyramid antireflection structure is obtained；
Step 3, prepares black silicon structure：Silicon chip is positioned in magnetic control sputtering device, 1.2 × 10 are evacuated to-4Below Pa, Simultaneously magnetron sputtering C u targets, Ni targets, power is respectively 140W, 120W, and magnetron sputtering C u targets, Ni target times are 5min so as to shape Into Cu/Ni alloy films；The silicon chip that above-mentioned sputtering there are Cu/Ni alloy films is positioned over into the mixed solution of 2.7M H2O2 and 8.3M HF In, corrode 100min at 92 DEG C, corrode silicon chip surface and go out silicon nanostructure, i.e., black silicon structure is molten with hydrochloric acid after corroding Liquid is cleaned to it, removes the Ni granules of residual, last deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell：
1) by the silicon chip for preparing, diffusion layer being diffuseed to form using phosphorus oxychloride liquid source, diffusion temperature is 800 DEG C~ 1150℃；Etched using the plasma periphery of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, make upper and lower two Face separates, and then removes phosphorosilicate glass to Wafer Cleaning 30s using low concentration hydrofluoric acid solution (3vol%)；
2) by Fe3O4:P3HT:PCBM=0.018:1:Fe3O4 magnetic nano-particles are doped to light and are lived by 0.8 mass ratio In property layer solution, doping content is 1%, and then silicon chip is placed in above-mentioned photoactive layer solution, sonic oscillation 30min, in silicon Piece surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particles are prepared as follows using liquid phase coprecipitation method：By 0.85g (3.1mmol) FeCl36H2O and 0.3g (1.5mmol) FeCl24H2O, is dissolved under nitrogen protection in 200ml ultra-pure waters and makes iron salt Mixed solution；At 80 DEG C, the Dilute Ammonia Solution that 2ml mass concentrations are 25% is slowly added to iron salt and is mixed by vigorous magnetic stirring In closing solution, when solution value is increased to 7~8, iron salt hydrolysis produce the Fe3O4 magnetic nano-particles of a large amount of black, continue to drip Hydro-oxidation helium to pH=9 reacts 3h, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating Out, milli-Q water, in being then dispersed in 200ml ultra-pure waters, add 2ml mass concentrations be 25% Dilute Ammonia Solution and 1ml Oleic acid, in 80 DEG C of constant temperature vigorous magnetic stirring 1h.The concentrated hydrochloric acid that mass concentration is 36% is slowly added in most backward solution, Until produce lumpy precipitate in flask, by lumpy precipitate with, again with ethanol purge 3 times, removing unreacted oil after Magnet collection Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) using high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into into high temperature oxidation furnace, into stove oxygen is passed through, make silicon In oxidation atmosphere, surface is gradually oxidized and generates 5~10nm thick SiO piece2, then the silicon chip is put into into magnetic control sputtering device In, one layer of Al is deposited with first using reaction magnetocontrol sputtering method2O3Then thin film, thickness about 40nm recycles PECVD deposition One layer of silicon nitride so as to form SiO2/Al2O3/SiNXOverlayer passivation film；
4) buffer electrode layer is prepared：Using radio frequency magnetron sputtering method, one is deposited in silicon chip upper and lower surface respectively Layer Cr films, thickness is 100nm, used as the cushion of upper/lower electrode；
5) electrode is prepared：Using the method for silk screen printing, the upper/lower electrode and back of the body electricity of black silicon solar cell are made respectively , finally black silicon solar cell is sintered, make electrode form good Ohmic contact with silicon, then connect a wire to up and down Electrode.
Test result：
The black silion cell characteristic of condition is irradiated in AM1.5 standard analogs light source：
Open-circuit voltage is 0.965V, and short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell reflection Rate is 1.26%.The carrier lifetime of battery is measured using QSSPC, as injection carrier concentration △ n=1015cm-3When, effectively Minority carrier lifetime is 10.9 μ s.
It is 20.69% that test obtains the solar energy conversion efficiency of the LED street lamp, the reflectance about 1.26% to sunlight, Through 3000 retests, transformation efficiency variable quantity is less than 12%, and the high conversion efficiency of the LED street lamp is reproducible.
Embodiment 5
Fig. 1 is a kind of structural representation of the LED street lamp for municipal works according to an exemplary embodiment, such as Shown in Fig. 1, the LED street lamp includes Transparent lamp shade, Dismantlable LED light 4, power supply 1, controlling switch 3 and sensor 2；Institute State Dismantlable LED light 4 be provided with it is multiple；The power supply 1 is connected with sensor 2 and controlling switch 3, the power supply 1 with can Dismountable LED light source 4 connects.In the present embodiment, preferably, power supply is made up of solar module described in 1；It is described can Dismountable LED light source 4 is made up of multiple LEDs being connected with each other, and multiple lamp beads is provided with the LED, in the present embodiment In, the quantity of lamp bead is 50~60.Further, the quantity of the lamp bead is 55, and is distributed in detachable LED light side by side On source 4.
Preferably, the solar module includes black silicon solar cell module and accumulator；The black silicon sun Energy battery module is the black silicon structure based on P-type silicon piece as shown in Figure 3, and the black silicon structure is in silicon chip surface pyramid structure On the basis of using Cu/Ni alloy films auxiliary chemical method etching prepare, in the present embodiment, the pyramid structure be Corrode in the isopropyl alcohol mixture of the NaOH and 7vol.% of 2.8wt.% and obtain.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO are followed successively by above the black silicon structure2/Al2O3/SiNXIt is folded Layer passivating film 03, buffer electrode layer 04 and Top electrode 05；The photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；It is described black Silicon structure is in turn below buffer electrode layer, bottom electrode；The SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its In, the diffusion layer 01 is to spread source for doping P elements using phosphorus oxychloride.
Fig. 2 be a kind of black silicon that adopted of the LED street lamp for municipal works according to an exemplary embodiment too The preparation method of positive energy battery module, referring to Fig. 2, comprises the following steps：
Step one, cleaning silicon chip：Certain size P-type silicon piece is taken, silicon chip is immersed in into sulphuric acid:Hydrogen peroxide=3:2 (volumes Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed into 15vol%HF solution, then using deionized water pair Silicon chip rinses 2min, then silicon chip is placed in the HF solution of 0.5wt.% and rinses 1min, to remove silicon chip surface autoxidation Layer, last deionized water rinses 2min；
Step 2, prepares pyramid structure：The isopropyl alcohol mixture of the NaOH and 7vol.% of 2.8wt.% is prepared, will Silicon chip is placed in mixed solution the ultrasonic erosion 1h at 80 DEG C, and in silicon chip surface pyramid antireflection structure is obtained；
Step 3, prepares black silicon structure：Silicon chip is positioned in magnetic control sputtering device, 1.2 × 10 are evacuated to-4Below Pa, Simultaneously magnetron sputtering C u targets, Ni targets, power is respectively 140W, 120W, and magnetron sputtering C u targets, Ni target times are 5min so as to shape Into Cu/Ni alloy films；The silicon chip that above-mentioned sputtering there are Cu/Ni alloy films is positioned over into the mixed solution of 2.7M H2O2 and 8.3M HF In, corrode 100min at 92 DEG C, corrode silicon chip surface and go out silicon nanostructure, i.e., black silicon structure is molten with hydrochloric acid after corroding Liquid is cleaned to it, removes the Ni granules of residual, last deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell：
1) by the silicon chip for preparing, diffusion layer being diffuseed to form using phosphorus oxychloride liquid source, diffusion temperature is 800 DEG C~ 1150℃；Etched using the plasma periphery of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, make upper and lower two Face separates, and then removes phosphorosilicate glass to Wafer Cleaning 30s using low concentration hydrofluoric acid solution (3vol%)；
2) by Fe3O4:P3HT:PCBM=0.018:1:Fe3O4 magnetic nano-particles are doped to light and are lived by 0.8 mass ratio In property layer solution, doping content is 1%, and then silicon chip is placed in above-mentioned photoactive layer solution, sonic oscillation 30min, in silicon Piece surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particles are prepared as follows using liquid phase coprecipitation method：By 0.85g (3.1mmol) FeCl36H2O and 0.3g (1.5mmol) FeCl24H2O, is dissolved under nitrogen protection in 200ml ultra-pure waters and makes iron salt Mixed solution；At 80 DEG C, the Dilute Ammonia Solution that 2ml mass concentrations are 25% is slowly added to iron salt and is mixed by vigorous magnetic stirring In closing solution, when solution value is increased to 7~8, iron salt hydrolysis produce the Fe3O4 magnetic nano-particles of a large amount of black, continue to drip Hydro-oxidation helium to pH=9 reacts 3h, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating Out, milli-Q water, in being then dispersed in 200ml ultra-pure waters, add 2ml mass concentrations be 25% Dilute Ammonia Solution and 1ml Oleic acid, in 80 DEG C of constant temperature vigorous magnetic stirring 1h.The concentrated hydrochloric acid that mass concentration is 36% is slowly added in most backward solution, Until produce lumpy precipitate in flask, by lumpy precipitate with, again with ethanol purge 3 times, removing unreacted oil after Magnet collection Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) using high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into into high temperature oxidation furnace, into stove oxygen is passed through, make silicon In oxidation atmosphere, surface is gradually oxidized and generates 5~10nm thick SiO piece2, then the silicon chip is put into into magnetic control sputtering device In, one layer of Al is deposited with first using reaction magnetocontrol sputtering method2O3Then thin film, thickness about 40nm recycles PECVD deposition One layer of silicon nitride so as to form SiO2/Al2O3/SiNXOverlayer passivation film；
4) buffer electrode layer is prepared：Using radio frequency magnetron sputtering method, one is deposited in silicon chip upper and lower surface respectively Layer Cr films, thickness is 100nm, used as the cushion of upper/lower electrode；
5) electrode is prepared：Using the method for silk screen printing, the upper/lower electrode and back of the body electricity of black silicon solar cell are made respectively , finally black silicon solar cell is sintered, make electrode form good Ohmic contact with silicon, then connect a wire to up and down Electrode.
Test result：
The black silion cell characteristic of condition is irradiated in AM1.5 standard analogs light source：
Open-circuit voltage is 0.965V, and short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell reflection Rate is 2.1%.The carrier lifetime of battery is measured using QSSPC, as injection carrier concentration △ n=1015cm-3When, it is effectively few Number carrier lifetime is 10.9 μ s.
It is 26.58% that test obtains the solar energy conversion efficiency of the LED street lamp, reflectance about 2.1%, the Jing to sunlight 3000 retests are crossed, transformation efficiency variable quantity is less than 14%, and the high conversion efficiency of the LED street lamp is reproducible.
With regard to the device in above-described embodiment, wherein modules perform the concrete mode of operation in relevant the method Embodiment in be described in detail, explanation will be not set forth in detail herein.
Those skilled in the art will readily occur to its of the present invention after considering description and putting into practice invention disclosed herein Its embodiment.The application is intended to any modification of the present invention, purposes or adaptations, these modifications, purposes or Person's adaptations follow the general principle of the present invention and including the undocumented common knowledge in the art of the application Or conventional techniques.Description and embodiments are considered only as exemplary, and true scope and spirit of the invention are by following Claim is pointed out.
It should be appreciated that the precision architecture for being described above and being shown in the drawings is the invention is not limited in, and And can without departing from the scope carry out various modifications and changes.The scope of the present invention is only limited by appended claim.

Claims (3)

1. a kind of LED street lamp for municipal works, it is characterised in that：The LED street lamp includes Transparent lamp shade, detachable LED light source, power supply, controlling switch and sensor；The Dismantlable LED light is provided with multiple；The power supply and sensing Device and controlling switch connect, and the power supply is connected with Dismantlable LED light.
2. a kind of LED street lamp for municipal works according to claim 1, it is characterised in that：The power supply is by the sun Can battery component composition；The Dismantlable LED light is made up of multiple LEDs being connected with each other, and is provided with the LED Multiple lamp beads.
3. a kind of LED street lamp for municipal works according to claim 2, it is characterised in that：The quantity of the lamp bead For 50~60.
CN201610548116.8A 2016-07-08 2016-07-08 LED road lamp for municipal engineering Pending CN106678715A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102353010A (en) * 2011-09-02 2012-02-15 房雪锋 Acousto-optic emergency control solar thermoelectric complementary light emitting diode (LED) lamp
CN104393114A (en) * 2014-11-17 2015-03-04 中国电子科技集团公司第四十八研究所 Preparation method of polycrystalline black silicon of micro-nano composite suede structure
CN204534397U (en) * 2015-01-26 2015-08-05 李英 Intelligent solar LED street lamp
CN204859641U (en) * 2015-07-16 2015-12-09 昆明恩辉电子电气有限公司 Automatic LED street lamp of luminance is adjusted to sensitization
CN204879912U (en) * 2015-08-11 2015-12-16 云南睿利科技有限公司 Lightning protection LED solar street lamp
CN105276514A (en) * 2015-11-27 2016-01-27 宁波皓升半导体照明有限公司 Solar LED streetlamp

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102353010A (en) * 2011-09-02 2012-02-15 房雪锋 Acousto-optic emergency control solar thermoelectric complementary light emitting diode (LED) lamp
CN104393114A (en) * 2014-11-17 2015-03-04 中国电子科技集团公司第四十八研究所 Preparation method of polycrystalline black silicon of micro-nano composite suede structure
CN204534397U (en) * 2015-01-26 2015-08-05 李英 Intelligent solar LED street lamp
CN204859641U (en) * 2015-07-16 2015-12-09 昆明恩辉电子电气有限公司 Automatic LED street lamp of luminance is adjusted to sensitization
CN204879912U (en) * 2015-08-11 2015-12-16 云南睿利科技有限公司 Lightning protection LED solar street lamp
CN105276514A (en) * 2015-11-27 2016-01-27 宁波皓升半导体照明有限公司 Solar LED streetlamp

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Application publication date: 20170517