CN106672976A - Low-boron polycrystalline silicon and preparation method thereof - Google Patents
Low-boron polycrystalline silicon and preparation method thereof Download PDFInfo
- Publication number
- CN106672976A CN106672976A CN201710084961.9A CN201710084961A CN106672976A CN 106672976 A CN106672976 A CN 106672976A CN 201710084961 A CN201710084961 A CN 201710084961A CN 106672976 A CN106672976 A CN 106672976A
- Authority
- CN
- China
- Prior art keywords
- boron
- raw material
- low
- polysilicon
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
- C01B33/025—Preparation by reduction of silica or free silica-containing material with carbon or a solid carbonaceous material, i.e. carbo-thermal process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention provides low-boron polycrystalline silicon and a preparation method thereof and relates to the field of metallurgy. The low-boron polycrystalline silicon is prepared by mixing a carbon raw material with boron content less than 0.3ppm and a silicon dioxide raw material with boron content less than 0.15ppm according to a mass ratio of 1:1-3.5 and then smelting. The preparation method includes: mixing the carbon raw material with the boron content less than 0.3ppm and the silicon dioxide raw material with the boron content less than 0.15ppm according to the mass ratio of 1:1-3.5, and smelting. The low-boron polycrystalline silicon is prepared from the low-boron carbon raw material and the low-boron silicon dioxide raw material and can meet requirements of solar grade polycrystalline silicon without re-deboration.
Description
Technical field
The present invention relates to field of metallurgy, and more particularly to a kind of low boron polysilicon and preparation method thereof.
Background technology
Polysilicon can be divided into metallurgical grade silicon (MG＆ technical grades), solar energy level silicon (SG), electronic-grade silicon (EG) by purity, its
In, solar energy level silicon is 99.99%~99.9999% containing Si.
The purity of polysilicon can directly influence the conversion efficiency and battery life of solaode.In production of polysilicon
Major impurity has Fe, Ni, Cu, Zn, Al, Ga, B, P, Cr, C etc., and wherein B impurity is a kind of impurity for being very difficult to remove in production, this
Planting impurities left can reduce minority carrier lifetime in polysilicon as complex centre, affect the conversion effect of solaode
Rate.Current B Impurity removals difficulty is big, high cost, it has also become the technology resistance of high efficiency crystalline silicon solar cell development.
At present, the production technology of polysilicon is mainly produced using Siemens Method or improved Siemens.This method be with
Industrial silicon is raw material, first generates SiHCl with anhydrous hydrogen chloride gas reaction3, while producing a large amount of by-product SiCl4, additionally, also
Need to remove BCl through rectification and purification3、PCl3、SiCl4、FeCl3Deng high-purity Si HCl after impurity3, hydrogen is passed through in reduction furnace
Polysilicon is reduced under gas, high temperature.Not only cost of investment is high for this technique, and low yield, high energy consumption, equipment corrosion it is serious,
Often there is explosion accident, pollute big, operative's bad environments in Jing.Even with the cold hydrogenation technology of improved Siemens,
Disadvantages mentioned above still cannot improve.
Therefore, the production method of low borosilicate, Technology are studied, so as to obtain inexpensive, highly purified low borosilicate material,
To ensure the efficient of high efficiency crystalline silicon solar cell, reliability, stability, have great importance.
The content of the invention
It is an object of the invention to provide a kind of low boron polysilicon, this low boron polysilicon can reach solar-grade polysilicon
Requirement.
Another object of the present invention is to a kind of preparation method of low boron polysilicon is provided, with Physical production of polysilicon side
Formula substitutes the polysilicon of the chemical methods such as Siemens Method, improved Siemens or silane thermal decomposition process production.
The present invention solves its technical problem and employs the following technical solutions to realize.
The present invention proposes a kind of low boron polysilicon, and the carbon raw material and Boron contents by Boron contents less than 0.3ppm is less than
The silica material of 0.15ppm is 1 according to mass ratio：Smelt at a temperature of 1500~2500 DEG C after 1~3.5 mixing and make
.
The present invention proposes a kind of preparation method of low boron polysilicon, including：By Boron contents less than 0.3ppm carbon raw material and
Silica material of the Boron contents less than 0.15ppm is 1 according to mass ratio：After 1~3.5 mixing, in 1500~2500 DEG C of temperature
The lower smelting of degree is obtained.
The beneficial effect of the embodiment of the present invention is：
This low boron polysilicon is prepared using low boron carbon raw material and low boron silica material, without the need for carrying out boron removal again
Meet the requirement of solar-grade polysilicon.
This low boron polycrystalline silicon preparation method has the advantages that low cost, high efficiency, scalp, pollution-free and high-purity.It is logical
Cross the silica material of carbon raw material and Boron contents from Boron contents less than 0.3ppm less than 0.15ppm and smelt obtained low boron
Polysilicon disclosure satisfy that the requirement of the low boron polysilicon of solar level without the need for boron removal again.
Specific embodiment
To make purpose, technical scheme and the advantage of the embodiment of the present invention clearer, below will be in the embodiment of the present invention
Technical scheme be clearly and completely described.Unreceipted actual conditions person, builds according to normal condition or manufacturer in embodiment
The condition of view is carried out.Agents useful for same or the unreceipted production firm person of instrument, being can pass through the conventional product that commercially available purchase is obtained
Product.
Low boron polysilicon of the embodiment of the present invention and preparation method thereof is specifically described below.
A kind of low boron polysilicon, the carbon raw material and boron material content by Boron contents less than 0.3ppm is less than the two of 0.15ppm
Raw silicon oxide material is 1 according to mass ratio：Smelt after 1~3.5 mixing and be obtained.It is appreciated that the carbon for preparing this low boron polysilicon is former
Expect for low boron carbon raw material, the silica material for preparing this low boron polysilicon is low boron silica material.By using above-mentioned
Low boron carbon raw material and low boron silica material prepare polysilicon without the need for carry out boron removal again or except boron by meet the sun
The preparation of energy level polysilicon.
Preferably, the Boron contents in carbon raw material are 0.01~0.28ppm, the Boron contents in silica material are 0.01
~0.14ppm.Further preferably, the Boron contents in carbon raw material are 0.01~0.25ppm；Boron contents in silica material are
0.01~0.10ppm.Still more preferably, the Boron contents in carbon raw material are 0.01~0.20ppm；Boron in silica material
Content is 0.01~0.08ppm.Most preferably, the Boron contents in carbon raw material are 0.01~0.15ppm；Boron in silica material
Content is 0.01~0.08ppm.
Preparing the carbon raw material of this low boron polysilicon can be obtained by following methods：Choose petroleum coke, white carbon black, activated carbon and stone
At least one in the carbon materials such as ink is obtained through chloridising roasting；Choose the carbons such as petroleum coke, white carbon black, activated carbon and graphite
At least one in material is obtained through pickling；Choose at least one in the carbon materials such as petroleum coke, white carbon black, activated carbon and graphite
It is obtained through alkali cleaning；Further, it is also possible to sequentially pass through purification and crack using carbonaceous gas be obtained.It is appreciated that carbon raw material
Preparation is not limited only to the mode cited by this specification, no matter prepares carbon raw material using a kind of mode of any of the above, as long as ensureing
Boron contents in the carbon raw material of preparation are less than 0.3ppm.
Preparing the silica material of this low boron polysilicon can be obtained by following methods：Choose Silicon stone, crystal and quartz
At least one in ore deposit, the water solution cycle leaching after crushing through boron removal agent is obtained；In choosing Silicon stone, crystal and quartz mine
At least one, the pickling such as Jing persulfuric acid, hydrochloric acid after crushing is obtained；At least one in Silicon stone, crystal and quartz mine is chosen, is crushed
It is obtained through sodium hydroxide solution alkali cleaning afterwards；Can also be using vapor phase method, chemical precipitation method, sol-gel process, microemulsion method and
Any one method synthesis in hydrothermal synthesis method.It is appreciated that no matter preparing silicon dioxide using a kind of mode of any of the above
Raw material, as long as ensureing that the Boron contents in the silica material for preparing are less than 0.15ppm.
A kind of preparation method of low boron polysilicon, including：
(1) according to the ingredient requirement for preparing this low boron polysilicon, carbon raw material and silica material are prepared.
Preparing the carbon raw material of this low boron polysilicon can be obtained by following methods：Choose petroleum coke, white carbon black, activated carbon and stone
At least one in the carbon materials such as ink is obtained through chloridising roasting；Choose the carbons such as petroleum coke, white carbon black, activated carbon and graphite
At least one in material is obtained through pickling；Choose at least one in the carbon materials such as petroleum coke, white carbon black, activated carbon and graphite
It is obtained through alkali cleaning；Further, it is also possible to sequentially pass through purification and crack using carbonaceous gas be obtained.It is appreciated that carbon raw material
Preparation is not limited only to the mode cited by this specification, no matter prepares carbon raw material using a kind of mode of any of the above, as long as ensureing
Boron contents in the carbon raw material of preparation are less than 0.3ppm.
Preparing the silica material of this low boron polysilicon can be obtained by following methods：Choose Silicon stone, crystal and quartz
At least one in ore deposit, the water solution cycle leaching after crushing through boron removal agent is obtained；In choosing Silicon stone, crystal and quartz mine
At least one, the pickling such as Jing persulfuric acid, hydrochloric acid after crushing is obtained；At least one in Silicon stone, crystal and quartz mine is chosen, is crushed
It is obtained through sodium hydroxide solution alkali cleaning afterwards；Can also be using vapor phase method, chemical precipitation method, sol-gel process, microemulsion method and
Any one method synthesis in hydrothermal synthesis method.It is appreciated that no matter preparing silicon dioxide using a kind of mode of any of the above
Raw material, as long as ensureing that the Boron contents in the silica material for preparing are less than 0.15ppm.
(2) it is 1 according to mass ratio by obtained carbon raw material and obtained silica material：1~3.5 is added to mineral hot furnace
Middle mixing, smelts at a temperature of 1500~2500 DEG C and smelting product is obtained.Specifically, mineral hot furnace can select direct current furnace,
Three-phase alternating current electric furnace can be selected.In other implementations of this programme, mineral hot furnace can be replaced using other high temperature furnaces, example
Coreless induction furnace can be such as selected, can also be from intermediate frequency furnace etc., as long as ensureing the metallurgical effect of low boron polysilicon.
Now, the reaction of generation is in mineral hot furnace：
Primary response：
2C+SiO2=Si+2CO；
Side reaction：
3C+SiO2=SiC+2CO,
2SiC+SiO2=3Si+2CO,
3SiO2+ 2SiC=Si+4SiO+2CO,
SiO+SiC=2Si+CO,
SiO+CO=SiO+C,
3SiO+CO=2SiO2+SiC。
By from low boron carbon raw material and low boron silica material, you can low boron polysilicon is obtained.
(3) smelt after carbon raw material and silica material, also including removal step.Specifically, by obtained smelting product
Pickling, directional solidification and vacuum refining are carried out successively obtains low boron polysilicon.By above-mentioned removal step, low boron can be removed
Metal impurities and nonmetallic inclusion in polysilicon, you can as the low boron polysilicon of solar energy power generating, as Physical
The low boron polysilicon of obtained solar level.It is appreciated that the preparation method of this low boron polysilicon is Physical prepares low boron polycrystalline
Silicon.
To sum up, this low boron polycrystalline silicon preparation method has low cost, high efficiency, scalp, pollution-free and high-purity etc. excellent
Point.Smelted by silica material of the carbon raw material and Boron contents from Boron contents less than 0.3ppm less than 0.15ppm and be obtained
Low boron polysilicon without the need for boron removal again, i.e., can meet the requirement of the low boron polysilicon of solar level.The letter of this preparation method technique
Single, with low cost and quality preferably, there is great promotional value on solar-grade polysilicon market, meets country at present energetically
The recycling economy of promotion, with significant environmental benefit and social benefit.
Preferably, low boron polysilicon can be prepared according to following preparation method, mainly include：
(1) according to the ingredient requirement for preparing this low boron polysilicon, carbon raw material and silica material are prepared.Carbon raw material and two
The preparation method of raw silicon oxide material is identical with above-mentioned preparation method, will not be described here.
(2) it is 1 according to mass ratio：1~3.5 chooses the carbon raw material for preparing and the silica material of preparation.By titanium dioxide
Silicon raw material includes two parts, as Part I silicon dioxide and Part II silicon dioxide.Wherein, " first " and " second " is only used
In differentiation.Part I silicon dioxide is used for and carbon raw material silicon carbide smelting, and Part II silicon dioxide is used for and carborundum smelting
The standby low boron polysilicon of refining.
Specifically, carbon raw material and the mass ratio that feeds intake of Part I silicon dioxide are 1：1~2.5.It is appreciated that carbon raw material
Smelt with Part I silicon dioxide and carborundum is obtained, carborundum feeds intake mass ratio for 1 with Part II silicon dioxide：0.5
~1.
(3) it is 1 according to mass ratio by obtained carbon raw material and Part I silicon dioxide：1~2.5 is added to silicon carbide furnace
Middle mixing, carries out smelting prepared carborundum for the first time at a temperature of 1500~2500 DEG C.
Now, the reaction of generation is in silicon carbide furnace：
3C+SiO2=SiC+2CO.
The smelting after first time smelts carbon raw material and Part I silicon dioxide mixes at a temperature of 1500~2500 DEG C
More uniform carborundum is refined to obtain, carborundum carries out second smelting with Part II silicon dioxide again.
(4) it is 1 according to the mass ratio of carborundum and the second silicon dioxide：0.5~1, Part II silicon dioxide is added
To in silicon carbide furnace so that carborundum and Part II silicon dioxide further mix, secondary at a temperature of 1500~2500 DEG C
Smelt and smelting product is obtained.
Now, the reaction of generation is in silicon carbide furnace：
Primary response：
2SiC+SiO2=3Si+2CO；
Side reaction：
3SiO2+ 2SiC=Si+4SiO+2CO,
SiO+SiC=2Si+CO,
SiO+CO=SiO+C,
3SiO+CO=2SiO2+SiC。
First, carbon raw material and Part I silicon dioxide mixed smelting are obtained into uniform carborundum.Secondly, then by second
Part of silica is added to uniform carborundum and low boron polysilicon is obtained.It follows that this polysilicon is relative to improvement west gate
Son sends out the low boron polysilicon for preparing and has more preferable uniformity.
(5) the low boron polysilicon for preparing is applied to before the preparation of polysilicon chip, also including removal step.Specifically, will make
The smelting product for obtaining carries out successively the removal steps such as pickling, directional solidification and vacuum refining and obtains low boron polysilicon.By above-mentioned
Removal step, the metal impurities and nonmetallic inclusion in low boron polysilicon can be removed, you can as solar energy power generating
Low boron polysilicon, the as low boron polysilicon of solar level obtained in Physical.
To sum up, this low boron polycrystalline silicon preparation method has low cost, high efficiency, scalp, pollution-free and high-purity etc. excellent
Point.Contained by Part I silicon dioxide and boron of the carbon raw material, Boron contents from Boron contents less than 0.3ppm less than 0.15ppm
Part II silicon dioxide of the amount less than 0.15ppm, is first obtained uniform carbon by carbon and Part I silicon dioxide mixed smelting
SiClx, then Part II silicon dioxide is added to into uniform carborundum low boron polysilicon is obtained.Smelt obtained low boron polycrystalline
Silicon disclosure satisfy that the requirement of the low boron polysilicon of solar level without the need for boron removal again.It is this preparation method process is simple, with low cost
With quality preferably, there is great promotional value on solar-grade polysilicon market, meet the national circulation advocated energetically at present
Economy, with significant environmental benefit and social benefit.
The feature and performance of the present invention are described in further detail with reference to embodiments.
Embodiment 1
Take the silica material that the carbon raw material and 40t boron contents that 20t boron contents are 0.1ppm is 0.03ppm.
Just carbon raw material and silica material are added in mineral hot furnace and smelt at a temperature of 1500~2500 DEG C, smelting
The low boron polysilicon being smelt is assembled and is flowed out in the molten bath of mineral hot furnace, connects silicon water with ladle afterwards, and mineral hot furnace continues to smelt low
Boron polysilicon.Become the low boron polysilicon of solid after silicon water cooling in ladle.
After testing, the Boron contents in low boron polysilicon are 0.12ppm.
Embodiment 2
Take the silica material that the carbon raw material and 50t boron contents that 20t boron contents are 0.05ppm is 0.02ppm.
Just carbon raw material and silica material are added in mineral hot furnace and smelt at a temperature of 1500~2500 DEG C, smelting
The low boron polysilicon being smelt is assembled and is flowed out in the molten bath of mineral hot furnace, connects silicon water with ladle afterwards, and mineral hot furnace continues to smelt low
Boron polysilicon.Become the low boron polysilicon of solid after silicon water cooling in ladle.
After testing, the Boron contents in low boron polysilicon are 0.05ppm.
Embodiment 3
Take the silica material that the carbon raw material and 65t boron contents that 20t boron contents are 0.15ppm is 0.08ppm.
Carbon raw material and silica material are added in mineral hot furnace and the smelting at a temperature of 1500~2500 DEG C, are smelted
Into low boron polysilicon assemble and flow out in the molten bath of mineral hot furnace, connect silicon water with ladle afterwards, mineral hot furnace continues to smelt low boron
Polysilicon.Become the low boron polysilicon of solid after silicon water cooling in ladle.
After testing, the Boron contents in low boron polysilicon are 0.17ppm.
Embodiment 4
Take 20t boron contents are the carbon raw material of 0.1ppm, 34t boron contents are 0.02ppm Part I silicon dioxide and 27t
Boron content is the Part II silicon dioxide of 0.02ppm.Carbon raw material and Part I silicon dioxide are added in silicon carbide furnace
And smelt at a temperature of 1500~2500 DEG C, take out after the carborundum cooling smelted.
Carborundum and Part II silicon dioxide are added in intermediate frequency furnace and the smelting at a temperature of 1500~2500 DEG C,
The low boron polysilicon smelted is in graphite crucible congregate and flows out, and connects silicon water with ladle afterwards, and intermediate frequency furnace continues to smelt low
Boron polysilicon.Become the low boron polysilicon of solid after silicon water cooling in ladle.
After testing, the Boron contents in low boron polysilicon are 0.08ppm.
Embodiment 5
Take 20t boron contents be the carbon raw material of 0.15ppm, 20t boron contents for 0.01ppm Part I silicon dioxide and
20t boron contents are the Part II silicon dioxide of 0.01ppm.Carbon raw material and Part I silicon dioxide are added to into silicon carbide furnace
In and smelt at a temperature of 1500~2500 DEG C, take out after the cooling of the carborundum smelted.
Carborundum and Part II silicon dioxide are added in coreless induction furnace and the smelting at a temperature of 1500~2500 DEG C,
The low borosilicate smelted is continuously outflowed from going out in silicon hole for graphite crucible bottom, and the silicon nitride groove for having water-cooled with bottom connects silicon water.
Silicon water is cooled to the low borosilicate of solid in silicon nitride groove, is connect with another silicon nitride groove after filling, and is so capable of achieving continuous raw
Produce.Mineral hot furnace continues to smelt low boron polysilicon.
After testing, the Boron contents in low boron polysilicon are 0.1ppm.
Embodiment 6
Take 20t boron contents be the carbon raw material of 0.06ppm, 36t boron contents for 0.06ppm Part I silicon dioxide and
22.4t boron contents are the Part II silicon dioxide of 0.06ppm.Carbon raw material and Part I silicon dioxide are added to into carborundum
Smelt in stove and at a temperature of 1500~2500 DEG C, take out after the carborundum cooling smelted.
Carborundum and Part II silicon dioxide are added in mineral hot furnace and the smelting at a temperature of 1500~2500 DEG C,
The low boron polysilicon smelted is assembled and is flowed out in the molten bath of mineral hot furnace, connects silicon water with ladle afterwards, and mineral hot furnace continues to smelt
Low boron polysilicon.Become the low boron polysilicon of solid after silicon water cooling in ladle.
After testing, the Boron contents in low boron polysilicon are 0.05ppm.
Can be seen that using low boron obtained in embodiment 1~6 any one preparation method from the testing result of embodiment 1~6
Polysilicon, Boron contents are respectively less than 0.3ppm in its low boron polysilicon, meet the requirement of solar-grade polysilicon.Therefore, preparation
Low boron polysilicon need to only remove metal impurities therein and nonmetallic inclusion, you can used as the polysilicon of photovoltaic generation.Together
When, low boron polysilicon adulterates in ingot casting without boron, also further ensures Boron contents in low boron polysilicon less equal with distribution
It is even.
In sum, the preparation method process is simple of the low boron polysilicon of the embodiment of the present invention, with low cost and quality compared with
It is good, there is great promotional value on solar-grade polysilicon market, meet the national recycling economy advocated energetically at present, have
Significant environmental benefit and social benefit.The low boron polysilicon for preparing can better conform to answering in solar energy power generating
With.
Embodiments described above is a part of embodiment of the invention, rather than the embodiment of whole.The reality of the present invention
The detailed description for applying example is not intended to limit the scope of claimed invention, but is merely representative of the selected enforcement of the present invention
Example.Based on the embodiment in the present invention, what those of ordinary skill in the art were obtained under the premise of creative work is not made
Every other embodiment, belongs to the scope of protection of the invention.
Claims (10)
1. a kind of low boron polysilicon, it is characterised in that the carbon raw material and Boron contents by Boron contents less than 0.3ppm is less than 0.15ppm
Silica material according to mass ratio be 1：Smelt at a temperature of 1500~2500 DEG C after 1~3.5 mixing and be obtained.
2. low boron polysilicon according to claim 1, it is characterised in that the Boron contents of the carbon raw material are 0.01~
0.28ppm。
3. low boron polysilicon according to claim 1, it is characterised in that the Boron contents of the silica material are 0.01
~0.14ppm.
4. a kind of preparation method of low boron polysilicon, it is characterised in that the carbon raw material and Boron contents by Boron contents less than 0.3ppm
Silica material less than 0.15ppm is 1 according to mass ratio：After 1~3.5 mixing, the smelting at a temperature of 1500~2500 DEG C
Refining.
5. the preparation method of low boron polysilicon according to claim 4, it is characterised in that the silica material includes
Part I silicon dioxide and Part II silicon dioxide, smelting the carbon raw material and the silica material includes：First will
After the carbon raw material and Part I silicon dioxide mixing, carry out smelting prepared for the first time at a temperature of 1500~2500 DEG C
Carborundum, then by the carborundum and Part II silicon dioxide mixing after, the is carried out at a temperature of 1500~2500 DEG C
Secondary smelting.
6. the preparation method of low boron polysilicon according to claim 5, it is characterised in that carry out the first time smelting
When, the mass ratio that feeds intake of the carbon raw material and the Part I silicon dioxide is 1：1~2.5.
7. the preparation method of low boron polysilicon according to claim 6, it is characterised in that it is in carbon that the first time smelts
Carry out in SiClx stove.
8. the preparation method of low boron polysilicon according to claim 5, it is characterised in that carry out described second and smelt
When, the carborundum feeds intake mass ratio for 1 with the Part II silicon dioxide：0.5~1.
9. the preparation method of low boron polysilicon according to claim 8, it is characterised in that it is in ore deposit that described second is smelted
Carry out in one kind in hot stove, coreless induction furnace and intermediate frequency furnace.
10. the preparation method of the low boron polysilicon according to claim 4 or 5, it is characterised in that smelt the carbon raw material and
After the silica material, pickling, directional solidification and vacuum refining are carried out successively to smelting product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710084961.9A CN106672976A (en) | 2017-02-16 | 2017-02-16 | Low-boron polycrystalline silicon and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710084961.9A CN106672976A (en) | 2017-02-16 | 2017-02-16 | Low-boron polycrystalline silicon and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106672976A true CN106672976A (en) | 2017-05-17 |
Family
ID=58861025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710084961.9A Pending CN106672976A (en) | 2017-02-16 | 2017-02-16 | Low-boron polycrystalline silicon and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106672976A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108441952A (en) * | 2018-05-23 | 2018-08-24 | 甘肃金土新能源材料科技有限公司 | A kind of pure crystal silicon of low boron |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4460556A (en) * | 1982-04-29 | 1984-07-17 | Siemens Aktiengesellschaft | Method for producing high purity Si for solar cells |
| CN101372334A (en) * | 2008-10-22 | 2009-02-25 | 昆明理工大学 | Preparation of high purity silicon |
| US20100233063A1 (en) * | 2009-03-13 | 2010-09-16 | Radiant Technology Co. | Method for manufacturing high-purity silicon material |
| CN101857232A (en) * | 2009-04-07 | 2010-10-13 | 瑞贤科技股份有限公司 | Manufacturing method of high-purity silicon material |
| CN102066250A (en) * | 2008-06-16 | 2011-05-18 | N.E.D.硅股份公司 | Method for preparing high-purity metallurgical-grade silicon |
| CN102241399A (en) * | 2011-05-30 | 2011-11-16 | 东北大学 | Method for preparing low-boron, low-phosphorus high-purity silicon by electrothermal metallurgy process |
-
2017
- 2017-02-16 CN CN201710084961.9A patent/CN106672976A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4460556A (en) * | 1982-04-29 | 1984-07-17 | Siemens Aktiengesellschaft | Method for producing high purity Si for solar cells |
| CN102066250A (en) * | 2008-06-16 | 2011-05-18 | N.E.D.硅股份公司 | Method for preparing high-purity metallurgical-grade silicon |
| CN101372334A (en) * | 2008-10-22 | 2009-02-25 | 昆明理工大学 | Preparation of high purity silicon |
| US20100233063A1 (en) * | 2009-03-13 | 2010-09-16 | Radiant Technology Co. | Method for manufacturing high-purity silicon material |
| CN101857232A (en) * | 2009-04-07 | 2010-10-13 | 瑞贤科技股份有限公司 | Manufacturing method of high-purity silicon material |
| CN102241399A (en) * | 2011-05-30 | 2011-11-16 | 东北大学 | Method for preparing low-boron, low-phosphorus high-purity silicon by electrothermal metallurgy process |
Non-Patent Citations (4)
| Title |
|---|
| L.J. GEERLIGS等: "Solar-grade silicon by a direct route based on carbothermic reduction of silica: requirements and production technology", 《ECN REPORT》 * |
| YASUHIKO SAKAGUCH等: "Production of High Purity Silicon Silica Using AC-arc Furnace with by Carbothermic Reduction of Heated Shaft", 《ISIJ INTERNATIONAL》 * |
| 王新刚: "太阳能级多晶硅生产技术研究现状及展望", 《化工技术与开发》 * |
| 韩至成等: "《太阳能级硅提纯技术与装备》", 31 October 2011, 冶金工业出版社 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108441952A (en) * | 2018-05-23 | 2018-08-24 | 甘肃金土新能源材料科技有限公司 | A kind of pure crystal silicon of low boron |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8568683B2 (en) | Method for making silicon for solar cells and other applications | |
| CN101122047B (en) | Method for manufacturing polycrystalline silicon used for solar battery | |
| Ceccaroli et al. | Solar grade silicon feedstock | |
| JP4856738B2 (en) | Manufacturing method of high purity silicon material | |
| CN103774216B (en) | The method that molten-salt electrolysis and directional solidification combination technique produce solar-grade polysilicon | |
| ZA200400276B (en) | High purity metallurgical silocon and method for preparing same | |
| CN101462723B (en) | Method for preparing high purity silicon aluminum silicon alloy by vacuum carbon thermal reduction | |
| CN101255598A (en) | Method for preparing solar energy grade polycrystalline silicon | |
| CN102040220A (en) | Manufacturing method of solar-grade polycrystalline silicon | |
| CN101302013A (en) | Preparation of low-phosphorus solar-grade polysilicon | |
| CN108467043A (en) | A method of the slag agent of calcium silicates containing chlorine and wet oxygen mixed gas cooperative reinforcing Refining industrial silicon | |
| CN106672976A (en) | Low-boron polycrystalline silicon and preparation method thereof | |
| CN102616787B (en) | Method for removing boron-phosphorus impurities from silicon metal | |
| CN102432020B (en) | Manufacturing method of solar grade polysilicon | |
| CN112110450A (en) | Method for removing impurity boron in metallurgical-grade silicon | |
| CN101857232A (en) | Manufacturing method of high-purity silicon material | |
| CN101805921B (en) | Preparation method of polycrystalline silicon | |
| CN102241399B (en) | A kind of method of preparing low-boron, low-phosphorus high-purity silicon by electrothermal metallurgy process | |
| CN101928983B (en) | Method for producing polycrystalline silicon and polycrystalline silicon membrane by accelerant process | |
| CN108441952A (en) | A kind of pure crystal silicon of low boron | |
| CN101423218B (en) | Method for melting refractory element in silicon metal by plasma flame gun bottom blowing | |
| CN112744817B (en) | Solar-grade silicon with porous structure and preparation method and application thereof | |
| CN103072996A (en) | Electrophoretic assistant purifying method for solar grade polycrystalline silicon | |
| CN102476800A (en) | Industrial silicon smelting method | |
| Øvrelid et al. | 2 The MG Silicon Route |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170517 |
|
| RJ01 | Rejection of invention patent application after publication |