CN106663720A - 具有凹凸型氮化镓层的铝镓铟磷系发光二极管及其制造方法 - Google Patents
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Abstract
本发明涉及一种发光二极管及其制造方法,更详细而言,涉及一种为了增加发光二极管的光提取效率而在AlGaInP发光二极管的上部生长与AlGaInP系物质相比具有较大的带隙和较小的折射率的高质量GaN层。本发明的AlGaInP系发光二极管的特征在于,在上部表面上形成有GaN层,所述GaN层优选具有微细的凹凸图案表面。所述GaN层能够在AlGaInP系发光二极管的生长之后在相同的***中进行生长而无需附加额外的工序。
Description
技术领域
本发明涉及一种发光二极管及其制造方法,更详细而言,涉及一种为了增加发光二极管的光提取效率而在AlGaInP发光二极管的上部以高质量生长与AlGaInP系物质相比具有较大的带隙和较小的折射率的GaN层。
背景技术
AlGaInP系发光二极管为将所注入的电能转换为具有约570~630nm范围内的特定波长的光的半导体元件。特定波长的变化由发光二极管所具有的带隙(band gap)的大小来决定,而带隙的大小是能够通过改变Al和Ga的组成比来容易调节,例如,越增加Al组成比则波长越短。
AlGaInP系发光二极管一般利用能够进行高质量薄膜生长的有机金属化学气相沉积(MOCVD)***来制造。AlGaInP系发光二极管基本上具有在n型AlGaInP物质与p型AlGaInP物质中间存在以特定波长计算出的、未被掺杂的AlGaInP系高效率活性层的结构。并且,由于活性层、n型层及p型层具有相对较高的电阻,在考虑通用的发光二极管时,各层大部分生长为1μm以下的厚度(总厚度<3μm)。
由于这种AlGaInP系发光二极管的光效率通过内部量子效率和光提取效率来决定,因此为了增加发光二极管的光效率而需要增加这些效率中的至少一个。内部量子效率的增加通过扩大活性层的发射区域增加效率的方法来实现,通常该方法主要使用活性层的多层结构、电流扩散层以及电子-空穴溢出防止层等。光提取效率的增加通过使从活性层中发射出的光顺利地穿透到外部而增加效率的方法来实现,该方法使用反射膜、光子晶体(photonic crystal)以及表面凹凸形成(纹理)等。
为了增加光提取效率,在前述的方案中表面凹凸形成使用最广泛,且作为多种方法来使用。特别是,像AlGaInP系发光二极管的情况,一般利用磷酸系化学刻蚀方法对用作上部电流扩散层的Gap层表面进行处理,从而将表面制造为粗糙的凹凸形状以形成光的散射面。但是,由于这种化学刻蚀方法在Gap表面产生缺陷或污染而成为降低AlGaInP系发光二极管特性的主要原因。因此,需要即使不依赖化学刻蚀方法也能够形成用于增加光提取效率的表面凹凸的方案。
发明内容
(一)要解决的技术问题
本发明的目的在于增加AlGaInP系发光二极管的光提取效率。
本发明的目的在于提供一种能够在不使用化学刻蚀方法的情况下通过形成表面凹凸来增加光提取效率的AlGaInP系发光二极管。
此外,本发明的目的在于AlGaInP系发光二极管中在不变更生长***的情况下在发光二极管的表面上生长凹凸型GaN层。
(二)技术方案
本发明的AlGaInP系发光二极管的特征在于,在上部表面上形成有GaN层。所述GaN层优选为凹凸型GaN层,并优选通过沉积来形成。所述GaN层形成于发光二极管外延层的最上层,因此所述上部表面可以是电流扩散层或半导体层的表面。
所述GaN层为与在AlGaInP系发光二极管中使用的所有物质相比具有相对较高的带隙和较小的折射率的物质层,因此能够增加AlGaInP系发光二极管的光提取效率。在此,“具有相对较高的带隙”是指带隙大于AlGaInP系发光二极管的其它生长物质,使得不吸收从AlGaInP系发光二极管发射出的光而使其透射。此外,“具有相对较小的折射率”是指折射率小于AlGaInP系发光二极管的其它生长物质,所述GaN层的折射率为n=2.5。所述GaN层的折射率小于AlGaInP系的折射率(n=3.0~3.5),并且大于最终包围发光二极管的封装材料即环氧基的折射率(n=1.5~1.8)。
所述GaN层或凹凸型GaN层使成为妨碍来自活性层的光向发光二极管的外部发射的主要原因的全反射量大幅减少,由此增加光提取效率。在此,用语“凹凸型”是指在表面上形成有微细的凹凸图案,也可以理解为具有粗糙表面特性的图案。
所述GaN层在相对较低的温度下生长,优选在约400~700℃下生长,更优选在约500~550℃下生长。因此,在MOCVD***中,为了生长所述GaN层,能够利用在约670~800℃下生长的AlGaInP系发光二极管的生长***。即,能够在相同的MOCVD中生长AlGaInP系发光二极管的各层之后降低***内的温度,并在最上部层生长高质量GaN层。
在生长时进行过度掺杂(Doping)的情况下,所述GaN层可具有粗糙的表面。在此,过度掺杂是指在沉积时将例如Mg、Si、Zn等掺杂前驱体气体的流动率(flow rate)设定为约300sccm以上,优选设定为约400sccm以上。具有越增加前驱体气体的流动率则表面越粗糙的倾向。如果在MOCVD***中生长一定厚度的GaN层之后,使过度掺杂后的GaN层生长,则能够生长凹凸型高质量GaN层。
优选地,所述GaN层生长为具有100~2000nm的厚度。这是因为,在与上述范围相比厚度较薄的情况下,由于受到约50~60nm厚度的粗糙缓冲层的影响而难以进行高质量生长,并且在与上述范围相比厚度较厚的情况下,由于通常具有约2000~2300nm的厚度的上部电极被GaN层埋设而在最终灯的封装时发生不良的可能性较高。
在本发明中,所述AlGaInP系发光二极管通过在基板上生长第一型AlGaInP系半导体层、活性层及第二型AlGaInP系半导体层之后,在其之上优选生长凹凸型GaN层来制造。在此,第一型及第二型分别表示n型及p型或p型及n型。所述生长可通过MOCVD等在所属技术领域中已知的技术来执行,所述凹凸型GaN层可通过在如上所规定的过度掺杂环境中沉积GaN来生长。
优选地,为了提高发光二极管的发光效率,在所述基板与第一型半导体层之间生长DBR层,在所述第二型半导体层与GaN层之间生长电流扩散层。在所述GaN层的生长之后,在其之上沉积上部电极,并在基板下方沉积下部电极。对所述上部电极的沉积来说,由于与发光二极管的GaP物质或AlGaInP物质的电阻相比,GaN的电阻相对较大,因此在GaN层中例如通过刻蚀来去除待形成电极的部分之后,在已去除的区域中沉积上部电极。
(三)有益效果
根据本发明,通过在AlGaInP系发光二极管的生长时使具有较高的带隙和较小的折射率的GaN层生长在上部表面上,从而能够增加AlGaInP系发光二极管的光提取效率。
特别是,由于在AlGaInP系发光二极管的生长之后,所述GaN层在相同的***中直接生长为凹凸型而无需附加化学刻蚀处理或额外的工序,因此不会产生发光二极管的缺陷或污染,能够稳定地大幅增加发光二极管的效率,并且能够除去用于形成凹凸的附加工序步骤。
附图说明
图1是示意性地表示由MOCVD***制造的普通AlGaInP系发光二极管a和本发明的应用凹凸GaN层的AlGaInP系发光二极管b的结构的剖视图。
图2的(a)是本发明的具有凹凸型GaN层的AlGaInP系发光二极管的电子显微镜表面照片,(b)是表示所述发光二极管中GaP窗口层和凹凸型GaN层的垂直结构的电子显微镜侧面照片,(c)是表示对照片(a)的一部分进行定性分析的数据的图表。
图3是表示关于普通AlGaInP系发光二极管a和本发明的应用平坦型GaN层的AlGaInP系发光二极管b及应用凹凸型GaN层的AlGaInP系发光二极管c的光发射模式图。
图4是表示普通AlGaInP系发光二极管a和本发明的具有平坦型GaN层的AlGaInP系发光二极管b及具有凹凸型GaN层的AlGaInP系发光二极管c的光致发光(photo-luminescence;PL)特性的图表。
具体实施方式
本发明的附加方式、特征及优点包括关于代表性实施例的下述说明,该说明应结合所附的附图来理解。为了助于明确理解本发明,在各图中放大或省略或者示意性地表示局部组件。此外,各组件的大小并不是完全反映实际大小。下述实施例是为了让本发明所属技术领域的普通技术人员理解并容易实施本发明而举例说明本发明的优选实施方式的,并不能解释为限制本发明。普通技术人员应知道在本发明的思想和目的范围内能够进行多种变更和修改。
图1是示意性地简略表示由MOCVD***制造的普通AlGaInP系发光二极管a和本发明的应用凹凸型GaN层2的AlGaInP系发光二极管b的结构。普通AlGaInP系发光二极管a和本发明的AlGaInP系发光二极管b均具有在基板8上依次生长并层积有反射层7、下部约束层6、活性层5、上部约束层4及窗口层3的层结构,基板8的下表面上形成有下部电极9,窗口层3的上表面上形成有上部电极1。这些结构的具体形成可根据所属技术领域中已知的AlGaInP发光二极管的制造工序来执行。
对普通AlGaInP系发光二极管和本发明的AlGaInP系发光二极管均可包含的各层的结构进行更详细的说明,由于本发明的发光二极管为AlGaInP系,因此所述活性层5为(AlxGa1-x)1-yInyP层。根据需要,所述活性层5可应用单层、量子阱结构、多重量子阱结构等。优选地,所述活性层5由多层构成,由于改变x值的同时形成层而整个活性层形成有多重量子阱。因此,更多的电子向所述多重量子阱中的低能级聚集,其结果电子容易从导带转移到价带,从而能够增大发光效果。所述下部约束层6为n型AlGaInP层,上部约束层4为P型AlGaInP层。
所述基板8为n型GaAs基板。由于GaAs基板的光吸收性较大,因此从活性层4向下部或基板方向发射的光被GaAs基板吸收而降低发光二极管的效率。因此,如本发明所属技术领域的普通技术人员所理解,为了在不去除GaAs基板的情况下增加发光效率,在基板8上生长由多层构成的反射层7,由此使从活性层4向基板8方向发射的光朝向前面(上部)方向反射。所述反射层7为分布布拉格反射镜(distributed Bragg reflector;DBR)层,其由根据发光二极管的发光波长选自AlGaInP/AlGaInP、AlAs/AlGaAs、AlAs/GaAs及AlAs/AlGaInP等中的反复多层结构构成,所述发光二极管的发光波长由活性层4即(AlxGa1-x)1-yInyP层的组成比决定。
形成于上部约束层4上的上部窗口层3本质上为用于扩散电流的层,其由透明且电阻率较小的材料沉积而形成,优选为P型GaP层。为了实现电流扩散效果和上部侧面的发射圆锥体区域的扩大效果,所述窗口层3生长为数微米至数十微米的厚度,优选生长为约15μm以上的厚度。
具有对活性层5施加阳极电压的作用的上部电极1和具有对活性层5施加阴极电压的作用的下部电极9可分别使用作为AlGaInP系欧姆接触(ohmic contact)物质的AuGe和AuBe,并且电极物质的附加例在本发明所属技术领域中广为人知。
在前述的发光二极管的结构的基础上,本发明所的AlGaInP系发光二极管b具有在所述窗口层3上生长有GaN层的结构,优选具有生长有凹凸型GaN层2的结构。所述凹凸型GaN层2是为了增加发光二极管的光提取效率而应用的层,在不使用额外的处理或设备情况下,能够在为了生长AlGaInP系发光二极管b的其他层而使用的MOCVD***中生长所述凹凸型GaN层2。
图2是具有根据本发明制造的凹凸型GaN层的AlGaInP系发光二极管的电子显微镜照片,(a)是表示上部表面的照片,(b)是表示生长在窗口层上的GaN层的侧面照片,(c)是表示对表面照片(a)的一部分进行定性分析的数据。所述凹凸型GaN层通过以下方式生长:在MOCVD***中,500℃的温度下,使用150sccm的TMGa、45000sccm的NH3来沉积一定厚度的高质量GaN层,之后,在相同的生长环境中投入约400sccm的Cp2Mg的同时沉积GaN层。如表面照片(a)所示,在GaN层的表面上存在无数个弯曲并构成微细的凹凸图案。如侧面照片(b)所示,能够确认在窗口层(GaP)的正上方均匀地生长有约370nm厚度的凹凸型GaN层。此外,如图表(c)所示,经定性分析结果,从生长在GaP窗口层上的层中确认出“N”检测标识。由于AlGaInP系发光二极管在生长时未使用“N”物质,因此能够判断在GaP窗口层上生长的高质量物质为GaN。
图3是用于表示从活性层产生的光的发射根据GaN层的存在与否如何发生变化的图,是表示从普通AlGaInP系发光二极管a和本发明的应用平坦型GaN层的AlGaInP系发光二极管b及应用凹凸型GaN层的AlGaInP系发光二极管c中发射出的光的彼此不同的路线的图。像发光二极管a的情况,从活性层的点光源所产生的光经由具有彼此不同的折射率的上部约束层和窗口层向发光二极管的外部发射,相当数量的光在窗口层的表面分界面被反射而转向发光二极管的内部。相反,像应用平坦型GaN层的发光二极管b的情况,由于GaN物质的折射率小,与发光二极管a相比,在表面分界面被反射的光减少很多。此外,像应用凹凸型GaN层的发光二极管c的情况,由于表面的微细凹凸图案而提供较大的临界角,从而能够进一步显著减少因全反射而向内部反射的光。
图4表示在具有图3所示的结构的各发光二极管中测定出的光致发光(PL)特性。为了比较PL特性,平坦型GaN层和凹凸型GaN层分别生长在与普通AlGaInP系发光二极管相同的条件下生长的样品上。由此可知,与普通AlGaInP系发光二极管相比,应用平坦型GaN层的发光二极管的峰值波长强度增加了约1.8倍,应用凹凸型GaN层的发光二极管的峰值波长的强度增加了约2.1倍。由于这些发光二极管在GaN层的生长之前均具有相同的特性,因此可知光致发光的增加即发光二极管的效率增加是生长本发明的GaN层的结果。
虽然本发明中记载了代表性的实施例,但应理解为本发明在权利要求书中记载的权利要求的所有范围内具有受保护的权利。
Claims (6)
1.一种AlGaInP系发光二极管,其特征在于,在GaP窗口层的上部表面的电极周边设置有GaN层。
2.根据权利要求1所述的AlGaInP系发光二极管,其特征在于,所述GaN层为凹凸型GaN层。
3.根据权利要求1或2所述的AlGaInP系发光二极管,其特征在于,所述GaN层具有100~2000nm的厚度。
4.一种AlGaInP系发光二极管的制造方法,其特征在于,包括以下步骤:
在基板上生长第一型AlGaInP系半导体层、活性层及第二型AlGaInP系半导体层;
在所述第二型AlGaInP系半导体层上部生长GaP窗口层;以及
在所述GaP窗口层的表面上生长GaN层。
5.根据权利要求4所述的AlGaInP系发光二极管的制造方法,其特征在于,所述GaN层为凹凸型GaN层,并且为了形成表面凹凸图案而在过度掺杂环境中生长所述GaN层。
6.根据权利要求4或5所述的AlGaInP系发光二极管的制造方法,其特征在于,进一步包括以下步骤:在所述第一型AlGaInP系半导体层的生长之前生长DBR层。
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