CN106654006A - SiO2 neurobionics layer-based neurobionics device and preparation method thereof - Google Patents
SiO2 neurobionics layer-based neurobionics device and preparation method thereof Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 68
- 229910052681 coesite Inorganic materials 0.000 title claims abstract description 61
- 229910052906 cristobalite Inorganic materials 0.000 title claims abstract description 61
- 229910052682 stishovite Inorganic materials 0.000 title claims abstract description 61
- 229910052905 tridymite Inorganic materials 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000004544 sputter deposition Methods 0.000 claims description 34
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 13
- 210000005036 nerve Anatomy 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 210000000225 synapse Anatomy 0.000 abstract description 19
- 230000003518 presynaptic effect Effects 0.000 abstract description 11
- 230000000638 stimulation Effects 0.000 abstract description 10
- 230000001242 postsynaptic effect Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000014759 maintenance of location Effects 0.000 abstract description 2
- 230000008859 change Effects 0.000 description 18
- 210000002569 neuron Anatomy 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 230000001149 cognitive effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000003920 cognitive function Effects 0.000 description 4
- 230000003956 synaptic plasticity Effects 0.000 description 4
- 238000013500 data storage Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000000946 synaptic effect Effects 0.000 description 3
- 238000013528 artificial neural network Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000009021 linear effect Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000004218 nerve net Anatomy 0.000 description 1
- 230000004751 neurological system process Effects 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 210000005215 presynaptic neuron Anatomy 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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Abstract
The invention discloses a SiO2 neurobionics layer-based neurobionics device, which comprises an Ag substrate. A neurobionics layer and an Ag electrode layer are sequentially formed on the substrate. The neurobionics layer sequentially comprises a first SiO2 film layer, an Ag film intermediate layer and a second SiO2 film layer from bottom to top. At the same time, the invention also discloses a preparation method of the neurobionics device. According to the technical scheme of the invention, the two ends of the prepared device are respectively used as two input ends, namely for presynaptic stimulus and postsynaptic stimulus respectively. According to the time difference between the presynaptic stimulus and the postsynaptic stimulus, the resistance value is changed. In this way, the characteristics of biological synapses can be simulated. Under the stimulation effects of different electrical pulses, the resistance value is changed slowly between a high resistance state and a low resistance state, and the range thereof is stable. Therefore, a plurality of stable resistance states are presented and good retention characteristics are realized. In the repeated application condition of electrical pulse stimulations, changed states can be remembered, and the conversion repeatability of high and low resistance states is high. Therefore, the neurobionics device is more stable in performance, and wider in application prospect.
Description
Technical field
The present invention relates to technical field of microelectronic devices, specifically a kind of to be based on SiO2The nerve of neurobionics layer is imitated
Raw device and preparation method thereof.
Background technology
In areas of information technology, the area for reducing memory cell is a main driving for developing current data memory technology
Power.But, within following 15 to 20 years, current memory technology is up to its physics limit, it is difficult to further develop.
In order to promote the sustainable development of memory technology, need to find a kind of new developing direction.A kind of its possible developing direction be from
The cognitive storage that biology is bionical and comes, it only has this simple function of data storage unlike current memory, but as people
Memory it is equally rich and varied, data storage, information processing and most important cognitive function can be realized, be such as suitable for, learn
Practise, with insight, the structure of new knowledge etc..The function of this cognitive storage needs as the data storage technology of driving force
Artificial neural network is built using the device with cognitive function, therefore, exploitation cognitive memory is this with cognitive function
Microelectronic component, is exactly the focus of research in current industry.
It is that most basic one kind is cognitive as the electronic synapse device for building artificial neural network in cognitive memory
Memory.Electronic synapse device, such as nerve synapse, is the connection between different neurons, with to characterize between neuron
The synapse weight of bonding strength, and under different stimulations, synapse weight can be changed accordingly, so as to realize study and
The function of memory.However, in the middle of neutral net, nerve synapse huge number, the area for needing to reduce electronic synapse device and
Power consumption, is possible to build the neutral net of of certain scale, certain cognitive function.In recent years, people pass through many experiments
And test, it is found that this new electronic devices and components of memristor have similar excellent characteristic, the wherein memory function of memristor
There is very high similitude with controllability and organism nerve synapse.Have 10 in human brain11-1014Individual neuron, and connect
The cynapse quantity for connecing these neurons is then up to 1015.Nerve synapse is made up of three parts：Presynaptic membrane, postsynaptic membrane and two
Intermembranous narrow slit --- synaptic cleft, its spacing is usually 20-40nm.Under stimulating electrical signal, the nerve of transmission information is carried
Mediator is by presynaptic neuron by synaptic cleft one-way transmission to postsynaptic neuron.Therefore, presynaptic caudacoria is similar to recalling
The two ends metal electrode of device, and synaptic cleft are hindered similar to the dielectric layer of memristor, its thickness is about tens nanometer.
Synaptic plasticity is the most basic characteristic of organism nerve synapse, and cynapse can be with bonding strength between neuron
Strong and weak dynamic stimulation suppresses signal so that signal keeps consecutive variations.This requires that device can be made electric signal is applied
With under, the gradual change of resistance value is realized.Memristor can analog neuron cynapse, most basic foundation is that they have non-linear electric
Property, i.e., using the class electrical properties of memristor two（Change totally different high and low two kinds of resistance states to realize the gradual behavior of resistance）
In being applied to the simulation of nerve synapse.But, current bionical device is not conformed to due to its neurobionics layer material and structure design
Reason cause device exist in applied voltage change between high low resistance state continuity is poor, the conductivity of continuity change
The low defect of difference, the stability of device.
The content of the invention
It is an object of the invention to provide a kind of be based on SiO2Neurobionics device of neurobionics layer and preparation method thereof,
Change that continuity is poor, device stability between high low resistance state to solve to exist when existing neurobionics device has applied voltage
Poor problem.
The purpose of the present invention is achieved through the following technical solutions：One kind is based on SiO2The neurobionics of neurobionics layer
Device, including Ag substrates, the neurobionics layer that sequentially forms on the Ag substrates and Ag electrode layers；The neurobionics layer from
Include successively on down：First SiO2Film layer, Ag films intermediate layer, the 2nd SiO2Film layer.
First SiO2Film layer, Ag films intermediate layer, the 2nd SiO2The thickness ratio of film layer is 5:1:5；The Ag films intermediate layer
Thickness be preferably 2-6nm, the thickness in the Ag films intermediate layer is more preferably 2nm, i.e., the thickness of described neurobionics layer is in 20-
Its practicality is more preferable between 25nm.
The neurobionics layer is prepared from using the method for magnetron sputtering.
The thickness of the Ag electrode layers is 50-300nm；The Ag electrode layers are to be evenly distributed on the neurobionics layer
Some a diameter of 80-200 μm of circular electrode.
Present invention also offers a kind of be based on SiO2The preparation method of the neurobionics device of neurobionics layer, including it is following
Step：
（a）Ag substrates are cleaned with ultrasonic wave respectively successively in deionized water, acetone and alcohol, is then taken out and is used N2Dry up；
（b）Cleaned Ag substrates are fixed on the substrate table of magnetron sputtering apparatus cavity, and cavity is evacuated into 1 ×
10-4-4×10-4Pa；
（c）SiO is placed on target platform in cavity2Target, places Ag targets on direct current target platform, Ar and O is passed through into cavity2,
Adjustment interface valve makes the pressure in cavity maintain 1-6Pa, opens control SiO2The radio frequency source of target build-up of luminance, adjusts radio frequency source work(
Rate is 100-200W, makes SiO2Target build-up of luminance, pre-sputtering 8-15min；
（d）After pre-sputtering is finished, start formal sputtering, in Ag Grown SiO2Film layer, the formal sputtering time is 25-
30min, obtains a SiO2Film layer；
（e）By SiO2The radio frequency source of target is turned off, and cavity is evacuated into 1 × 10-4-4×10-4Pa, silicon to 400
DEG C, the dc source of control Ag targets is opened, adjustment RF source power is 8-11W, makes Ag target build-ups of luminance, pre-sputtering 8-15min,
Start formal sputtering, in a SiO2Ag film layers are grown in film layer, the formal sputtering time is 4-8s, obtains Ag films intermediate layer；
（f）The dc source of Ag targets is turned off, keeps underlayer temperature to be 400 DEG C, open and place SiO2The radio frequency of target build-up of luminance
Source, adjustment direct current source power is 130-170W, makes SiO2Target build-up of luminance, pre-sputtering 8-15min starts formal sputtering, in Ag films
SiO is grown on intermediate layer2Film layer, the formal sputtering time is 25-35min, obtains the 2nd SiO2Film layer；
（g）Forming the 2nd SiO2Mask plate is placed on Ag substrates after film layer, magnetron sputtering apparatus cavity is evacuated into 1 ×
10-4-4×10-4Pa；The Ar that flow is 20-30sccm is passed through into cavity, adjustment interface valve maintains the pressure in cavity
1-6Pa, opens the DC source of control Ag target build-ups of luminance, and adjustment direct current source power is 8-11W, makes Ag target build-ups of luminance, pre-sputtering 4-
6min；Start formal sputtering 6-10min, in the 2nd SiO2Ag electrode layers are formed in film layer.
Step（c）Described in Ar and O2To cavity flow-rate ratio is passed through for 50-100sccm: 15-35sccm.
Step（d）、（e）、（f）The first SiO of middle control2Film layer, Ag films intermediate layer and the 2nd SiO2The thickness ratio of film layer is 5:
1:5；The thickness in the Ag films intermediate layer is preferably 2-6nm；More preferably 2nm.
Step（g）The thickness of middle Ag electrode layers is 50-300nm.
Step（g）A diameter of 80-200 μm of circular port is evenly equipped with described mask plate.
Step（g）Ag electrode layers described in the Ag electrode layers are some circles being evenly distributed on the neurobionics layer
Electrode.
The neurobionics device that the present invention is provided is designed as Ag substrates, neurobionics layer and Ag electrode layers, and nerve is imitative
Generating layer is designed as a SiO of certain material and specific thicknesses ratio2Film layer, Ag films intermediate layer and the 2nd SiO2Film layer；By specific
Magnetron sputtering technique process, makes Ag film mid layer sections be diffused into a SiO2Film layer and the 2nd SiO2In film layer, one kind has been obtained
Can occur slowly to change between high-impedance state and low resistance state, there are multiple stable high low resistance states and keep superperformance, be capable of achieving
The neurobionics device that neurobionics are required.Its two ends of device prepared by the present invention respectively as two inputs, respectively
Presynaptic stimulates and the postsynaptic stimulates, and stimulates the time difference stimulated with the postsynaptic according to the presynaptic and changes resistance, can imitate
The characteristic of biological synapse, changes the resistance of its resistance under the stimulation for applying different electric pulses, and its high and low resistance state can occur slowly
Change, and scope is stable；There are multiple stable resistance states and there is good retention performance, in the feelings for repeating to apply electric pulse stimulation
Under condition, the state for changing can be remembered, the repeatability of high low-resistance conversion is high, be that a kind of performance is more stable, application prospect more
Wide neurobionics device.
Description of the drawings
Fig. 1 is the structural representation of neurobionics device provided by the present invention.
Fig. 2 is the structural representation of the magnetron sputtering apparatus for being used to prepare neurobionics device in the present invention.
Fig. 3 is the neurobionics Device current-voltage variable condition figure prepared by the embodiment of the present invention 2.
Fig. 4 is variation diagram of the neurobionics device both end voltage prepared by the embodiment of the present invention 2 with source table voltage.
Fig. 5 is that the activity schedule of the neurobionics device prepared by the embodiment of the present invention 2 relies on synaptic plasticity（STDP）
Functional diagram.
Specific embodiment
Example below is used to further describe the present invention, but the invention is not limited in any way.
Embodiment 1
Nerve provided by the present invention imitates device, and its structure is as shown in figure 1, on the Ag substrates 1, Ag substrates 1 including the bottom
Neurobionics layer 2, the Ag electrode layers 3 on neurobionics layer 2.
Wherein neurobionics layer 2 is sequentially overlapped by trilamellar membrane layer and is constituted, and a SiO is followed successively by from the bottom to top2Film layer 21, Ag
Film intermediate layer 22, the 2nd SiO2Film layer 23.First SiO2Film layer 21, Ag films intermediate layer 22, the 2nd SiO2The thickness ratio of film layer 23 is
5:1:5；Its Ag films intermediate layer 22 is 2-6nm, preferred 2nm, and in general, the gross thickness of neurobionics layer 2 is in 20-25nm scopes
Interior practicality is more preferable.Neurobionics layer 2 is prepared from using magnetically controlled sputter method, and its part of Ag films intermediate layer 2 is diffused in first
SiO2The SiO of film layer 21 and the 2nd2In film layer 23.
The thickness of Ag electrode layers 3 can be in the range of 50-300nm；Ag electrode layers 3 are to be evenly distributed on the neurobionics
The circular electrode of some a diameter of 80-200 μm on layer.
Embodiment 2
The preparation method of neurobionics device provided by the present invention comprises the steps：
First, neurobionics layer is formed on substrate
（1）Preparing substrate
Select Ag as substrate, then Ag substrates are put and cleans 10min with ultrasonic wave in acetone, then use in alcohol is put into
Ultrasonic wave cleans 10min, then is taken out with clip and be put into deionized water and clean 5min with ultrasonic wave, finally takes out, and uses N2Dry up.
（2）Place the substrate into cavity and vacuumize
Using magnetron sputtering apparatus as shown in Figure 2, magnetron sputtering apparatus cavity 4 is opened, take out compressing tablet platform 9, use sand papering
Remove that surface blot is shinny to its uniform color, the organic matter of the waste and surface attachment polished is cleaned with acetone, use wine
Smart last wiped clean.Cleaned Ag substrates are placed on into compressing tablet on compressing tablet platform 9, are ensured that Ag substrates are firm during compressing tablet and is pressed in compressing tablet
On platform 9 and flatten, it is ensured that growing film is uniform when sputtering.The substrate table 8 compressing tablet platform 9 put in order being put into cavity 4
On, cavity 4 is closed after fixing, 2 × 10 are evacuated to cavity 4-4Pa。
（3）It is passed through gas
The lower section of the compressing tablet platform 9 in cavity 4 is provided with target platform 6 and target platform 12, is used to place silver-colored target 7, target platform 12 on target platform 6
It is upper to be used to place silica target 11.Silica target by the radio frequency source outside magnetron sputtering apparatus cavity to control it
Brightness, and silver-colored target is controlled its build-up of luminance by the DC source outside magnetron sputtering apparatus cavity.
When the air pressure in cavity is 2 × 10-4During Pa, two gas cylinders are opened, flow-rate ratio is passed through into cavity by charge valve 5
For 75sccm:The Ar and O of 25sccm2, adjusting interface valve 10 makes the pressure in cavity maintain 1-6Pa, opens control dioxy
The radio frequency source of SiClx target build-up of luminance, adjustment RF source power is 150W, makes silica target build-up of luminance, pre-sputtering 10min.
（4）First SiO2The formation of film layer
After silica pre-sputtering, baffle plate is opened, start formal sputtering 30min, one layer of SiO is formed on Ag substrates2Film
Layer, as a SiO2Film layer.
（5）The formation in Ag films intermediate layer
The radio frequency source of control silica target build-up of luminance is turned off, cavity is evacuated into 2 × 10-4Pa, opens control Ag target build-ups of luminance
Dc source, substrate is warming up to 400 DEG C, and adjustment RF source power is 10w, makes silver-colored target build-up of luminance, pre-sputtering 10min, then
Formal sputtering 6s, obtains Ag films intermediate layer, and now the Ag in Ag films intermediate layer has partly diffused into a SiO2In film layer.
（6）2nd SiO2The formation of film layer
After forming Ag films intermediate layer, dc source is closed, open radio-frequency power supply, in the case of underlayer temperature is for 400 DEG C, control two
The radio frequency source of silica target build-up of luminance, adjustment RF source power is 150W, opens silica target build-up of luminance, pre-sputtering 10min
Beginning formal sputtering 30min, forms the 2nd SiO on Ag films intermediate layer2Film layer, now the Ag in Ag films intermediate layer partly diffuse into
Enter the 2nd SiO2In film layer.
2nd, electrode layer is formed on neurobionics layer
（1）Radio frequency source is closed, by the pressure release of interface valve 10, magnetron sputtering apparatus cavity 4 is opened, nerve is formed with Ag substrates imitative
2nd SiO of generating layer2Mask plate is placed in film layer, a diameter of 90 μm of circular port is uniformly densely covered with mask plate；By titanium dioxide
Silicon target replaces with Ag targets, cleaning chamber；
（2）2 × 10 are evacuated to cavity-4Pa；The Ar that flow is 25sccm is passed through in cavity, adjustment interface valve 10 makes cavity
Interior pressure maintains 1-6Pa, opens the DC source of the silver-colored target build-up of luminance of control, and adjustment direct current source power is 10W, plays silver-colored target
Brightness, pre-sputtering 5min；Formal sputtering 10min afterwards, in the 2nd SiO2Ag electrode layers are formed in film layer, that is, is prepared for neurobionics
Device.
Embodiments described above is any one embodiment in the preparation method protected of the present invention, if its
Claimed neurobionics device of the invention can be obtained in the range of claim and technological parameter described in this description,
And prepared neurobionics device has same or like performance with the device prepared by the present embodiment.
Device manufactured by the present invention out has electronic synapse function, the specially function of general cynapse, activity schedule
Rely on synaptic plasticity（Spike-Time-Depend Plasticity, STDP）, it is related to presynaptic stimulation and postsynaptic thorn
Sharp collective effect.In electronic synapse device, the two ends of device represent respectively presynaptic and postsynaptic, the electricity of two polarity
Pulse is respectively applied to this two ends to stimulate and postsynaptic stimulation as the presynaptic, to change magnitude of voltage as different stimulations, comes
Change resistance.
Embodiment 3
Neurobionics device applied voltage prepared by embodiment 2 is scanned, its result is as shown in Figure 3.Give the institute of embodiment 2
Apply a positive voltage on the Ag electrode layers of the neurobionics device of preparation, electric current is increased dramatically to current limliting, and device is in low-resistance
State, when negative voltage is applied on the Ag electrode layers of device, the electric current of device is strongly reduced, and resistance is changed into high resistant from low resistance state
State.And increase based on primary voltage value before current voltage change always.Neurobionics device prepared by the present invention is presented
The resistive characteristic physical mechanism for going out is conductive filament resistive mechanism, and its principle is that the formation and fracture of conductive filament realizes that resistance is high
Low conversion.When forward voltage is applied to the neurobionics device prepared by embodiment 2, the metal ion shape under electric field action
Into conductive channel electric current is increased dramatically, device be in low resistive state.After applying negative voltage, the joule that high current is produced
Thermal conductivity causes conductive filament fracture so that electric current is strongly reduced, and device is changed into high-impedance state again.Show in figure, to neurobionics device
Apply different voltages, the I-V characteristic curve for obtaining is essentially identical, its resistance can change as applied voltage changes,
And previous state can be remembered, make voltage that continuity change is presented.The non-linear property of prepared device, Memorability and neural process
Tactile principle has very high similitude.
On the neurobionics device prepared by embodiment 2, by the way that electronic synapse device is added in ball bearing made, point
Not Ce Liang source table magnitude of voltage and measuring resistance magnitude of voltage, by changing source table voltage, its value is controlled between -1V ~ 0.5V, its
As a result it is as shown in Figure 4.In figure when the voltage for being applied to source table is more than 0 V, gradually increase the voltage of source table, by neurobionics
The electric current of device also gradually increases, and its resistance is gradually reduced.When the voltage for being applied to source table is less than 0V, it is down to from -0.8V
During 0V, it is gradually reduced by the electric current of neurobionics device, its resistance gradually increases.Absolutely prove pulse signal size
Change can cause the change of device resistance, and the change of resistance is nonlinear.So, during analog neuron cynapse, cynapse pair
The perception of environmental stimuli can be showed well with the change of voltage.
Using the neurobionics device two ends prepared by embodiment 2 as two inputs, presynaptic stimulation and cynapse are represented
After stimulate, synaptic plasticity is relied on to the activity schedule of neurobionics device（STDP）Detected, its result is as shown in Figure 5.
Amplitude size identical electric pulse is successively added in two inputs of device, will be differed from the burst length and be arranged to 10 μ s, with conductance G
Size represent the size of synapse weight, variation delta W of synapse weight is conductance relative variation.In Fig. 5, work as the burst length
Difference Δ t>When 0, its weight W reduces, and device resistance increases；As Δ t<When 0, weight increase, device resistance reduces.And during pulse
Between difference it is less, weight variation delta W is bigger, the burst length difference it is bigger, weight variation delta W is less, when the burst length difference arrive greatly
When to a certain degree, weight variation delta W levels off to zero.Change the voltage pulse time difference control electric pulse amplitude after the presynaptic
Size, affects the effect of both superpositions, controls the change of resistance, it was demonstrated that prepared electronic bio device has the work(of STDP
Can, its achievable nerve synapse function.
Above-described specific embodiment has been described in detail to technical scheme and beneficial effect, Ying Li
Solution is to the foregoing is only presently most preferred embodiment of the invention, is not limited to the present invention, all principle models in the present invention
Interior done any modification, supplement and equivalent etc. are enclosed, be should be included within the scope of the present invention.
Claims (7)
1. it is a kind of to be based on SiO2The neurobionics device of neurobionics layer, it is characterised in that including Ag substrates, in the Ag substrates
On the neurobionics layer that sequentially forms and Ag electrode layers；The neurobionics layer includes successively from below to up：First SiO2Film layer,
Ag films intermediate layer, the 2nd SiO2Film layer.
2. according to claim 1 based on SiO2The neurobionics device of neurobionics layer, it is characterised in that the nerve
The thickness of bionical layer is 20-25nm, a SiO2Film layer, Ag films intermediate layer, the 2nd SiO2The thickness ratio of film layer is 5:1:5.
3. according to claim 1 based on SiO2The neurobionics device of neurobionics layer, it is characterised in that described first
SiO2Film layer, Ag films intermediate layer, the 2nd SiO2The thickness ratio of film layer is 5:1:5；The thickness 2-6nm in the Ag films intermediate layer.
4. according to claim 1,2 or 3 based on SiO2The neurobionics device of neurobionics layer, it is characterised in that described
Neurobionics layer is prepared from using the method for magnetron sputtering.
5. it is a kind of to be based on SiO2The preparation method of the neurobionics device of neurobionics layer, it is characterised in that comprise the following steps：
（a）Ag substrates are cleaned with ultrasonic wave respectively successively in deionized water, acetone and alcohol, is then taken out and is used N2Dry up；
（b）Cleaned Ag substrates are fixed on the substrate table of magnetron sputtering apparatus cavity, and cavity is evacuated into 1 × 10-4-4×10-4Pa；
（c）SiO is placed on radio frequency target platform in cavity2Target, on direct current target platform place Ag targets, be passed through into cavity Ar and
O2, adjusting interface valve makes the pressure in cavity maintain 1-6Pa, opens control SiO2The radio frequency source of target build-up of luminance, adjusts radio frequency source
Power is 100-200W, makes SiO2Target build-up of luminance, pre-sputtering 8-15min；
（d）After pre-sputtering is finished, start formal sputtering, in Ag Grown SiO2Film layer, the formal sputtering time is 25-
30min, obtains a SiO2Film layer；
（e）By SiO2The radio frequency source of target is turned off, and cavity is evacuated into 1 × 10-4-4×10-4Pa, silicon to 400
DEG C, the dc source of control Ag targets is opened, adjustment RF source power is 8-11W, makes Ag target build-ups of luminance, pre-sputtering 8-15min,
Start formal sputtering, in a SiO2Ag film layers are grown in film layer, the formal sputtering time is 4-8s, obtains Ag films intermediate layer；
（f）The dc source of Ag targets is turned off, keeps underlayer temperature to be 400 DEG C, open control SiO2The radio frequency of target build-up of luminance
Source, adjustment direct current source power is 130-170W, makes SiO2Target build-up of luminance, pre-sputtering 8-15min starts formal sputtering, in Ag films
SiO is grown on intermediate layer2Film layer, the formal sputtering time is 25-35min, obtains the 2nd SiO2Film layer；
（g）Forming the 2nd SiO2Mask plate is placed on Ag substrates after film layer, magnetron sputtering apparatus cavity is evacuated into 1 ×
10-4-4×10-4Pa；The Ar that flow is 20-30sccm is passed through into cavity, adjustment interface valve maintains the pressure in cavity
1-6Pa, opens the DC source of control Ag target build-ups of luminance, and adjustment direct current source power is 8-11W, makes Ag target build-ups of luminance, pre-sputtering 4-
6min；Start formal sputtering 6-10min, in the 2nd SiO2Ag electrode layers are formed in film layer.
6. according to claim 5 based on SiO2The preparation method of the neurobionics device of neurobionics layer, its feature exists
In step（c）Described in Ar and O2It is 50-100sccm to the flow-rate ratio that cavity is passed through: 15-35sccm.
7. according to claim 5 or 6 based on SiO2The preparation method of the neurobionics device of neurobionics layer, its feature
It is, step（g）The thickness of middle Ag electrode layers is 50-300nm.
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