CN106653549B - Semiconductor processing equipment - Google Patents
Semiconductor processing equipment Download PDFInfo
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- CN106653549B CN106653549B CN201510735219.0A CN201510735219A CN106653549B CN 106653549 B CN106653549 B CN 106653549B CN 201510735219 A CN201510735219 A CN 201510735219A CN 106653549 B CN106653549 B CN 106653549B
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- air inlet
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Abstract
The invention discloses a semiconductor processing device, comprising: a reaction chamber; the cylindrical ceramic window is of a hollow structure, and one end of the cylindrical ceramic window is communicated with the reaction cavity; the bearing window is arranged between the reaction cavity and the cylindrical ceramic window, is provided with a through hole and is communicated with the reaction cavity and the cylindrical ceramic window; the air inlet ring is opposite to the bearing window and is arranged at the other end of the cylindrical ceramic window; the upper cover is arranged on the other side of the air inlet ring opposite to the cylindrical ceramic window; the Faraday shielding device is sleeved on the outer side of the cylindrical ceramic window and is arranged between the bearing window and the air inlet ring; the coil assembly is sleeved on the outer side of the Faraday shielding device and arranged between the bearing window and the air inlet ring; and the guide ring is arranged in the cylindrical ceramic window and is connected with the bottom surface of the air inlet ring. According to the invention, the guide ring is arranged on the bottom surface of the gas inlet ring, so that the gas inlet path of the etching gas is effectively changed, the radio frequency coupling uniformity is improved, and the dissociation degree of the etching gas is effectively improved.
Description
Technical Field
The invention relates to the technical field of ICP devices, in particular to semiconductor processing equipment.
Background
A faraday shield arrangement is used to improve the uniformity of rf coupling during inductively coupled plasma etching. In the prior art, the faraday shielding device has various types, and the following three points are mainly considered when designing the type of the faraday shielding device:
(1) the shielding rate is easy to adjust, so that the optimum parameters are searched;
(2) the Faraday shield device is used as a main supporting component and a vacuum sealing component of the cylindrical ceramic window, but because the ceramic material is fragile, how to effectively combine the two functions is particularly important;
(3) the faraday shield apparatus is disposed between the cylindrical ceramic window and the coil assembly, which needs to be changed and replaced frequently, and thus, it is important to reduce the coil winding and disassembling steps.
Disclosure of Invention
The invention aims to provide semiconductor processing equipment, which effectively changes the gas inlet path of etching gas, improves the uniformity of radio frequency coupling and effectively improves the dissociation degree of the etching gas by arranging the guide ring on the bottom surface of the gas inlet ring.
In order to achieve the purpose, the invention is realized by the following technical scheme: a semiconductor processing apparatus, comprising:
the wafer etching device comprises a reaction cavity, wherein a wafer carrying table is arranged in the reaction cavity, and a wafer to be etched is placed on the wafer carrying table;
the cylindrical ceramic window is of a hollow structure, and one end of the cylindrical ceramic window is communicated with the reaction cavity;
the bearing window is arranged between the reaction cavity and the cylindrical ceramic window, is provided with a through hole and is communicated with the reaction cavity and the cylindrical ceramic window;
the air inlet ring is opposite to the bearing window and arranged at the other end of the cylindrical ceramic window, and a plurality of through holes are formed in the air inlet ring;
the upper cover is arranged on the other side of the air inlet ring opposite to the cylindrical ceramic window, a gas diffusion cavity is reserved between the air inlet ring and the upper cover, and the upper cover is provided with an air inlet hole;
the Faraday shielding device is sleeved on the outer side of the cylindrical ceramic window and is arranged between the bearing window and the air inlet ring;
the coil assembly is sleeved on the outer side of the Faraday shielding device and arranged between the bearing window and the air inlet ring;
the guide ring sets up in the cylindrical ceramic window, and with the basal surface of ring of admitting air is connected, leave plasma between guide ring and the cylindrical ceramic window and take place the space, plasma take place space one end and admit air the through-hole UNICOM on the ring, the other end and reaction chamber UNICOM.
The air inlet of the upper cover, the gas diffusion cavity between the air inlet ring and the upper cover, the plurality of through holes on the air inlet ring and the plasma generating space between the guide ring and the cylindrical ceramic window form an air inlet channel of etching gas.
And a ceramic block is embedded in the bearing window.
The diameter of the cylindrical ceramic window is larger than that of the wafer to be etched.
The semiconductor processing equipment further comprises a lower supporting sealing ring, wherein the lower supporting sealing ring is arranged between the bearing window and the cylindrical ceramic window, and part of the lower supporting sealing ring extends to the position below the Faraday shielding device.
The semiconductor processing equipment further comprises an upper half supporting sealing ring, wherein the upper half supporting sealing ring is sleeved on the outer side of the Faraday shielding device and is positioned between the air inlet ring and the coil assembly.
The semiconductor processing equipment also comprises a buffer seal, and the buffer seal is arranged on the end face of the upper cover, which is contacted with the air inlet ring.
The coil assembly is a spiral coil.
The gap between the coil assembly and the Faraday shielding device is less than 10 mm.
The guide ring is made of aluminum, and the surface of the guide ring is plated with a plasma corrosion resistant material.
Compared with the prior art, the semiconductor processing equipment has the following advantages: due to the fact that the guide ring is arranged, the size and the shape of the guide ring are changed, the air inlet channel of the etching gas is adjusted, the radio frequency coupling uniformity is improved, and the dissociation degree of the etching gas is effectively improved.
Drawings
FIG. 1 is a schematic view of the overall structure of a semiconductor processing apparatus according to the present invention;
FIG. 2 is a schematic view of the overall configuration of the Faraday shield apparatus;
fig. 3 is a schematic view of the overall structure of the coil assembly.
Detailed Description
The present invention will now be further described by way of the following detailed description of a preferred embodiment thereof, taken in conjunction with the accompanying drawings.
As shown in fig. 1 in combination with fig. 2 and 3, a semiconductor processing apparatus includes: the wafer etching device comprises a reaction cavity 100, wherein a wafer carrying table 101 is arranged in the reaction cavity 100, and a wafer 102 to be etched is placed on the wafer carrying table 101; a cylindrical ceramic window 200, wherein the cylindrical ceramic window 200 is a hollow structure, and one end of the cylindrical ceramic window is communicated with the reaction chamber 100; the bearing window 300 is arranged between the reaction chamber 100 and the cylindrical ceramic window 200, and the bearing window 300 is provided with a through hole for communicating the reaction chamber 100 and the cylindrical ceramic window 200; the air inlet ring 400 is arranged at the other end of the cylindrical ceramic window 200 opposite to the bearing window 300, a plurality of through holes 401 are formed in the air inlet ring 400, and the diameter of the air inlet ring 401 is larger than that of the cylindrical ceramic window 200; the upper cover 500 is arranged on the other side of the air inlet ring 400 opposite to the cylindrical ceramic window 200, a gas diffusion cavity 402 is reserved between the air inlet ring 400 and the upper cover 500, the upper cover is provided with an air inlet hole 501, and a plurality of through holes 401 on the air inlet ring 400 are communicated with the gas diffusion cavity 402 between the air inlet ring 400 and the upper cover 500; a faraday shielding device 600 sleeved outside the cylindrical ceramic window 200 and arranged between the bearing window 300 and the air inlet ring 400; a coil assembly 700 sleeved outside the faraday shielding device 600 and disposed between the bearing window 300 and the air inlet ring 400; the guide ring 800 is arranged in the cylindrical ceramic window 200 and connected with the bottom surface of the air inlet ring 400, a plasma generation space 801 is reserved between the guide ring 800 and the cylindrical ceramic window 200, one end of the plasma generation space 801 is communicated with the air inlet hole 401 on the cylindrical ceramic window 400, and the other end of the plasma generation space is communicated with the reaction chamber 100.
The plurality of through holes 401 of the inlet ring 400 are disposed corresponding to the plasma generation space 801 between the guide ring 800 and the cylindrical ceramic window 200.
The gas inlet holes 501 of the upper cover 500, the gas diffusion cavity 402 between the gas inlet ring 400 and the upper cover 500, the plurality of through holes 401 on the gas inlet ring 400, and the plasma generation space 801 between the guide ring 800 and the cylindrical ceramic window 200 form a gas inlet channel of the etching gas, the gas inlet channel can adjust the gas inlet path of the etching gas by changing the size and shape of the guide ring 800, the uniformity of radio frequency coupling is improved, and the dissociation degree of the etching gas is effectively improved.
In this embodiment, the guide ring 800 is made of aluminum, and preferably, the surface of the aluminum is plated with a plasma corrosion resistant material to prolong the etching time, and preferably, the surface of the aluminum material is plated with yttrium oxide.
In this embodiment, the load bearing window 300 is made of aluminum, and in other embodiments, the load bearing window body is made of aluminum and then embedded in a ceramic block.
In this embodiment, the diameter of the cylindrical ceramic window 200 is larger than the diameter of the wafer 102 to be etched, so as to effectively ensure that the etching gas is distributed on the surface of the wafer 102 to be etched.
In this embodiment, in order to ensure the sealing performance of the semiconductor processing equipment, the semiconductor processing equipment further comprises a lower supporting sealing ring 901, an upper half supporting sealing ring 902 and a buffer sealing 903, wherein the lower supporting sealing ring 901 is disposed between the carrier window 300 and the cylindrical ceramic window 200, and partially extends to the lower side of the faraday shield 600; the upper half supporting seal ring 902 is sleeved outside the faraday shield apparatus 600 and is located between the air inlet ring 400 and the coil assembly 700; a cushion seal 903 is provided on the end surface of the upper cover 500 that contacts the intake ring 400.
In the present embodiment, in order to facilitate the detachment and installation of the coil assembly 700, a gap is provided between the coil assembly 700 and the faraday shield apparatus 600, preferably, the gap between the coil assembly 700 and the faraday shield apparatus 600 is greater than the lateral distance between the faraday shield apparatus 600 and the air inlet ring 400, and the gap between the coil assembly 700 and the faraday shield apparatus 600 is less than 10 mm, so that the degree of inductively coupled plasma can be effectively ensured.
In the present embodiment, the coil assembly 700 is a spiral coil, and the dissociation degree of the etching gas can be changed by changing the winding number of the coil assembly 700.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (8)
1. A semiconductor processing apparatus, comprising:
the wafer etching device comprises a reaction cavity, wherein a wafer carrying table is arranged in the reaction cavity, and a wafer to be etched is placed on the wafer carrying table;
the cylindrical ceramic window is of a hollow structure, and one end of the cylindrical ceramic window is communicated with the reaction cavity;
the bearing window is arranged between the reaction cavity and the cylindrical ceramic window, is provided with a through hole and is communicated with the reaction cavity and the cylindrical ceramic window;
the air inlet ring is opposite to the bearing window and arranged at the other end of the cylindrical ceramic window, and a plurality of through holes are formed in the air inlet ring;
the upper cover is arranged on the other side of the air inlet ring opposite to the cylindrical ceramic window, a gas diffusion cavity is reserved between the air inlet ring and the upper cover, and the upper cover is provided with an air inlet hole;
the Faraday shielding device is sleeved on the outer side of the cylindrical ceramic window and is arranged between the bearing window and the air inlet ring;
the coil assembly is sleeved on the outer side of the Faraday shielding device and arranged between the bearing window and the air inlet ring, and the coil assembly is a spiral coil;
the guide ring is arranged in the cylindrical ceramic window and is connected with the bottom surface of the air inlet ring, a plasma generating space is reserved between the guide ring and the cylindrical ceramic window, one end of the plasma generating space is communicated with the through hole in the air inlet ring, and the other end of the plasma generating space is communicated with the reaction cavity; the air inlet of the upper cover, the gas diffusion cavity between the air inlet ring and the upper cover, the plurality of through holes on the air inlet ring and the plasma generating space between the guide ring and the cylindrical ceramic window form an air inlet channel of etching gas, and the air inlet channel can adjust the air inlet path of the etching gas by changing the size and shape of the guide ring;
the gap between the coil assembly and the faraday shield apparatus is greater than the lateral distance between the faraday shield apparatus and the air intake ring.
2. The semiconductor processing apparatus of claim 1, wherein a ceramic block is embedded in the carrier window.
3. The semiconductor processing apparatus of claim 1, wherein the cylindrical ceramic window has a diameter greater than a diameter of the wafer to be etched.
4. The semiconductor processing apparatus of claim 1, further comprising a lower support seal ring disposed between the carrier window and the cylindrical ceramic window and extending partially below the faraday shield apparatus.
5. The semiconductor processing apparatus of claim 1, further comprising an upper half support seal ring disposed about the faraday shield apparatus between the gas inlet ring and the coil assembly.
6. The semiconductor processing apparatus of claim 1, further comprising a cushion seal disposed at an end surface of the lid that contacts the gas inlet ring.
7. The semiconductor processing apparatus of claim 1, wherein the gap between the coil assembly and the faraday shield apparatus is less than 10 mm.
8. The semiconductor processing apparatus of claim 1, wherein the guide ring is made of aluminum and is coated with a plasma-resistant material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510735219.0A CN106653549B (en) | 2015-11-03 | 2015-11-03 | Semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510735219.0A CN106653549B (en) | 2015-11-03 | 2015-11-03 | Semiconductor processing equipment |
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| Publication Number | Publication Date |
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| CN106653549A CN106653549A (en) | 2017-05-10 |
| CN106653549B true CN106653549B (en) | 2020-02-11 |
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| CN201510735219.0A Active CN106653549B (en) | 2015-11-03 | 2015-11-03 | Semiconductor processing equipment |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114724907A (en) * | 2021-01-04 | 2022-07-08 | 江苏鲁汶仪器有限公司 | Ion source device with adjustable plasma density |
| CN114446759B (en) * | 2022-01-26 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
| CN114446761A (en) * | 2022-01-26 | 2022-05-06 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1554114A (en) * | 2001-02-08 | 2004-12-08 | 东京毅力科创株式会社 | Plasma treatment device and plasma treatment method |
| CN1614746A (en) * | 2003-11-04 | 2005-05-11 | 三星电子株式会社 | Helical resonator type plasma processing apparatus |
| CN101223624A (en) * | 2005-09-09 | 2008-07-16 | 株式会社爱发科 | Ion source and plasma processing device |
| CN102332384A (en) * | 2011-09-26 | 2012-01-25 | 中国科学院微电子研究所 | Device and method for producing neutral particle beams |
| CN103014745A (en) * | 2011-09-28 | 2013-04-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma pre-cleaning device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6474258B2 (en) * | 1999-03-26 | 2002-11-05 | Tokyo Electron Limited | Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma |
| US20110204023A1 (en) * | 2010-02-22 | 2011-08-25 | No-Hyun Huh | Multi inductively coupled plasma reactor and method thereof |
| CN102290314B (en) * | 2011-09-26 | 2013-12-25 | 中国科学院微电子研究所 | Device for producing neutral particle beam and method thereof |
| CN202839531U (en) * | 2012-06-28 | 2013-03-27 | 中微半导体设备(上海)有限公司 | Plasma processing device and Faraday shielding device thereof |
| CN104299875A (en) * | 2013-07-17 | 2015-01-21 | 中微半导体设备(上海)有限公司 | Inductively coupled plasma processing device |
| CN104576278B (en) * | 2013-10-10 | 2017-05-10 | 中微半导体设备(上海)有限公司 | Faraday shield plate and plasma treatment system using Faraday shield plate |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1554114A (en) * | 2001-02-08 | 2004-12-08 | 东京毅力科创株式会社 | Plasma treatment device and plasma treatment method |
| CN1614746A (en) * | 2003-11-04 | 2005-05-11 | 三星电子株式会社 | Helical resonator type plasma processing apparatus |
| CN101223624A (en) * | 2005-09-09 | 2008-07-16 | 株式会社爱发科 | Ion source and plasma processing device |
| CN102332384A (en) * | 2011-09-26 | 2012-01-25 | 中国科学院微电子研究所 | Device and method for producing neutral particle beams |
| CN103014745A (en) * | 2011-09-28 | 2013-04-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma pre-cleaning device |
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| CN106653549A (en) | 2017-05-10 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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