CN106652809B - Light-emitting diode integrated display device and manufacturing method thereof - Google Patents
Light-emitting diode integrated display device and manufacturing method thereof Download PDFInfo
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- CN106652809B CN106652809B CN201610909363.6A CN201610909363A CN106652809B CN 106652809 B CN106652809 B CN 106652809B CN 201610909363 A CN201610909363 A CN 201610909363A CN 106652809 B CN106652809 B CN 106652809B
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- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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Abstract
The invention provides a light emitting diode integrated display device and a manufacturing method thereof. The light emitting diode integrated display device includes a silicon substrate having two faces; a plurality of light emitting modules are arranged on the first surface of the silicon substrate in an array mode; each light emitting module comprises at least one light emitting diode and a nonvolatile memory; each light-emitting module is controlled by a column scanning driver through at least one column metal connecting line and controlled by a row data driver through at least one row metal connecting line; a digital signal processor and an analog signal processor are arranged on the second surface of the silicon substrate; the silicon substrate is provided with a plurality of penetrating electrodes in an array mode between two surfaces of the silicon substrate, and the penetrating electrodes are respectively connected with a row data driver, a column data driver, a digital signal processor and an analog signal processor on the second surface to form the light-emitting diode integrated display device. Therefore, the ultrathin miniature LED display screen can be made, and can be used as a display screen to replace the existing liquid crystal display screen and OLED display screen.
Description
Technical Field
The present invention relates to light emitting diode technology, and more particularly, to a light emitting diode integrated display device and a method for fabricating the same.
Background
With the development of technology, light emitting diodes have been widely used in various fields, including large-scale dot matrix display, illumination, and liquid crystal backlight.
At present, a display screen of a mobile phone is mainly a liquid crystal display screen, 60% of electricity is used on the display screen, and the mobile phone is inconvenient to charge every day. The most power consuming component is the display screen, for example, the display screen of the edge-lit mobile phone is adopted, and the LEDs arranged on the four sides illuminate the backlight plate, so that the display efficiency of the display screen of the mobile phone is less than 1%.
One solution is to adopt the OLED liquid crystal technology, which uses tens of thousands of LEDs on one surface, each LED is a pixel, and the LEDs can directly illuminate the eyes, which is very efficient in display, but the OLEDs are organic, and as outdoor display, they deteriorate quickly and are very easy to attenuate under the sun irradiation; furthermore, the efficiency of the OLED is low, 1W in the OLED has the efficiency of 26 lumens, and the display efficiency of the LED can be higher than the efficiency of 300 lumens.
Accordingly, the prior art is deficient and needs improvement.
Disclosure of Invention
The invention aims to provide a novel light-emitting diode integrated display device and a manufacturing method thereof.
The technical scheme of the invention is as follows: a light emitting diode integrated display device includes a silicon substrate having two faces; a plurality of light emitting modules are arranged on the first surface of the silicon substrate in an array mode; each light emitting module comprises at least one light emitting diode and a nonvolatile memory; each light-emitting module is controlled by a column scanning driver through at least one column metal connecting line and controlled by a row data driver through at least one row metal connecting line; a digital signal processor and an analog signal processor are arranged on the second surface of the silicon substrate; the silicon substrate is provided with a plurality of penetrating electrodes in an array mode between two surfaces of the silicon substrate, and the penetrating electrodes are respectively connected with a row data driver, a column data driver, a digital signal processor and an analog signal processor on the second surface to form the light-emitting diode integrated display device.
Preferably, the light emitting diode integrated display device is used for displaying still or dynamic color images and videos.
Preferably, each of said light emitting modules comprises at least one group III-V compound light emitting diode emitting a primary color of blue light.
Preferably, each of the light emitting modules includes a plurality of secondary light emitting materials emitting different colors by changing a primary color of the light emitting diode.
Preferably, each of the light emitting modules includes color pixels of at least three basic colors; wherein the basic colors include a primary color of red, a primary color of blue, and a primary color of green.
Preferably, each of said non-volatile memories comprises at least two transistors.
Preferably, the light emitting surface of the light emitting diode is non-parallel to the silicon substrate.
Preferably, the digital signal processor is a digital electronic device, the digital electronic device comprising: a digital analyzer, a digital processor, an image processor, a touch screen processor, a volatile memory, and a non-volatile memory; and/or, the analog signal processor is an electronic device comprising: the touch screen comprises an optical signal sensor, an electric signal sensor, an audio signal sensor, an analog signal amplifier, an analog signal-to-digital signal converter, a digital signal-to-analog signal converter, an audio signal processor and a touch screen signal processor.
Preferably, the column scan driver and the row data driver are further disposed on the first surface of the silicon substrate; and/or a transparent protective layer covering each light-emitting module is further arranged on the first surface of the silicon substrate, and the transparent protective layer and a volatile memory below the transparent protective layer form a touch screen electronic position sensor.
The invention also provides another technical scheme as follows: a method for manufacturing a light emitting diode integrated display device includes the steps of: etching the first surface of the silicon substrate to form a silicon surface array; epitaxially growing a light emitting diode array on the surface of the silicon surface array; forming at least one non-volatile memory on the surface of the silicon substrate in the vicinity of each light emitting diode; manufacturing a column scanning driver and a row data driver on a first surface of a silicon substrate; making column and row metal wires on the first surface of the silicon substrate, connecting the column scanning driver and the row data driver to each light-emitting diode, and connecting the non-volatile memory; dry etching a through hole on the second surface of the silicon substrate, insulating the inner surface of the through hole, filling the through hole with metal, and forming a back electrode connected with the two surfaces; manufacturing a digital signal processor and an analog signal processor on a second surface of the silicon substrate; manufacturing and forming a secondary luminescent material array on the surface of the light-emitting diode by adopting photoetching and thin film etching technologies; and arranging a transparent protective layer on the surface of the light-emitting diode integrated display device.
By adopting the scheme, the plurality of light-emitting modules are arranged on the first surface of the silicon substrate in an array mode, and the control structure is arranged on the second surface of the silicon substrate, so that the ultrathin miniature LED display screen can be manufactured, can be used as a display screen to replace the existing liquid crystal display screen and OLED display screen, and has high market application value.
Drawings
Fig. 1 is a schematic diagram of a first side etching of a silicon substrate according to an embodiment of the invention.
FIG. 2 is a schematic diagram of an MOCVD epitaxial growth of a 3-5 group semiconductor light emitting diode array of the embodiment shown in FIG. 1.
FIG. 3 is a schematic diagram of the embodiment of FIG. 2 with plasma etched through holes and vapor deposited metal filled holes to form back electrodes.
Fig. 4 is a schematic diagram of a control structure fabricated on the back side of the silicon substrate according to the embodiment shown in fig. 3.
FIG. 5 is a schematic diagram of forming an ITO transparent electrode on the surface of the LED array according to the embodiment shown in FIG. 4.
FIG. 6 is a schematic diagram of the embodiment of FIG. 5 showing the formation of a 3-color phosphor array by semiconductor lithography.
Fig. 7 is a schematic structural cross-sectional view of an led integrated display device according to an embodiment of the present invention.
Fig. 8 is a schematic view of growing a group 3-5 semiconductor light emitting diode species on a silicon substrate of a light emitting diode integrated display device according to an embodiment of the present invention.
Fig. 9 is a schematic front and back side view of a silicon substrate according to an embodiment of the present invention.
Fig. 10 is an enlarged view of the driving operation principle and a part of the driving operation principle of the active matrix light emitting diode display panel according to an embodiment of the present invention.
FIG. 11 is a schematic illustration of a silicon substrate surface etch in accordance with one embodiment of the present invention.
FIG. 12 is a schematic view of etching and selectively cleaning a silicon substrate surface in accordance with one embodiment of the present invention.
Fig. 13 is a schematic view of a semiconductor integrated circuit grown on a surface of a silicon substrate according to an embodiment of the present invention.
FIG. 14 is a schematic view of a control structure fabricated on the other side of the silicon substrate according to one embodiment of the present invention.
FIG. 15 is a schematic diagram of the secondary conversion of blue light into red and green light according to one embodiment of the invention.
Fig. 16 is a schematic structural cross-sectional view of an led integrated display device according to an embodiment of the present invention.
Detailed Description
In order to facilitate an understanding of the invention, the invention is described in more detail below with reference to the accompanying drawings and specific examples. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
One embodiment of the present invention is a light emitting diode integrated display device, which includes a silicon substrate having two faces; a plurality of light emitting modules are arranged on the first surface of the silicon substrate in an array mode; each light emitting module comprises at least one light emitting diode and a nonvolatile memory; each light-emitting module is controlled by a column scanning driver through at least one column metal connecting line and controlled by a row data driver through at least one row metal connecting line; a digital signal processor and an analog signal processor are arranged on the second surface of the silicon substrate; the silicon substrate is provided with a plurality of penetrating electrodes in an array mode between two surfaces of the silicon substrate, and the penetrating electrodes are respectively connected with a row data driver, a column data driver, a digital signal processor and an analog signal processor on the second surface; for example, a digital signal processor and an analog signal processor respectively connecting the row data driver and the column data driver with the second side form the light emitting diode integrated display device. For example, a light emitting diode integrated display device includes a silicon substrate having two faces; a plurality of light emitting modules are arranged on the first surface of the silicon substrate in an array mode; each light emitting module includes at least one light emitting diode and a non-volatile memory. For example, each of the light emitting modules is connected to the column scan driver through at least one column metal wire (i.e., a column metal line) for being controlled by the column scan driver, and is connected to the row data driver through at least one row metal wire (i.e., a row metal line) for being controlled by the row data driver. For example, the second side of the silicon substrate is provided with a signal processor, or the second side of the silicon substrate is provided with a control structure or control means, wherein the control structure or control means comprises the signal processor, for example, the signal processor comprises a digital signal processor and an analog signal processor; the silicon substrate is provided with a plurality of penetrating electrodes in an array mode between two surfaces of the silicon substrate, and the penetrating electrodes are respectively connected with the row data driver, the column data driver and the signal processor on the second surface to integrally form the light-emitting diode integrated display device. For example, the signal processor includes a data analysis and image processor including a digital signal processor and an analog signal processor. For example, the digital signal processor is a digital electronic device comprising: a digital analyzer, a digital processor, an image processor, a touch screen processor, a volatile memory, and a non-volatile memory; and/or, the analog signal processor is an electronic device comprising: the touch screen comprises an optical signal sensor, an electric signal sensor, an audio signal sensor, an analog signal amplifier, an analog signal-to-digital signal converter, a digital signal-to-analog signal converter, an audio signal processor and a touch screen signal processor. Preferably, the column scan driver and the row data driver are further disposed on the first surface of the silicon substrate; and/or a transparent protective layer covering each light-emitting module is further arranged on the first surface of the silicon substrate, and the transparent protective layer and a volatile memory below the transparent protective layer form a touch screen electronic position sensor.
For example, a light emitting diode integrated display device includes a silicon substrate having two faces; a plurality of light emitting modules are arranged on the first surface of the silicon substrate in an array mode; each light emitting module comprises at least one light emitting diode and a nonvolatile memory; each light-emitting module is controlled by a column scanning driver through at least one column metal connecting line and controlled by a row data driver through at least one row metal connecting line; the second surface of the silicon substrate is provided with a data analysis and image processor; the silicon substrate is provided with a plurality of penetrating electrodes in an array between two surfaces of the silicon substrate, and the penetrating electrodes are respectively connected with a row data driver, a column data driver and a data analysis and image processor of the second surface; for another example, the silicon substrate is provided with a plurality of penetrating electrodes in an array between two surfaces thereof, and the penetrating electrodes are respectively connected with the row data driver and the column data driver and the data analysis and image processor on the second surface to form the light emitting diode integrated display device. For example, the led integrated display device is used to display still or dynamic color images and video. Preferably, the column scan driver and the row data driver are further disposed on the first surface of the silicon substrate. Preferably, the first surface of the silicon substrate is further provided with a transparent protective layer covering each light-emitting module, wherein the transparent protective layer can be a transparent protective layer of an existing LED device. For example, the second side of the silicon substrate is provided with a control structure comprising the data analysis and image processor, the control structure being connected to each of the light emitting modules through each of the through-electrodes, respectively. For another example, the second side of the silicon substrate is further provided with a control structure; for another example, each of the transmissive electrodes forms an electrical signal channel respectively connecting each of the light emitting diodes and the control structure of the second surface; for another example, each of the penetrating electrodes is respectively connected to the row data driver and the column data driver of each of the light emitting diodes, the data analysis and image processor on the second surface, and the control structure; for another example, the control structure is connected to each of the light emitting diodes on the first surface through each of the transmissive electrodes. The data analysis and image processor, i.e. the analysis processor, may also be referred to as a signal processing/image controller, an image processor or a processor. As another example, the control structure includes the data analysis and image processor, that is, the second surface of the silicon substrate is provided with a control structure, the control structure includes the data analysis and image processor, the silicon substrate is provided with a plurality of penetrating electrodes in an array between two surfaces thereof, and the control structure respectively connecting the row data driver and the column data driver with the second surface forms an integrated display device. For example, each of the nonvolatile memories includes at least two transistors. For example, the data analysis and image processor, or the control structure, includes a memory and/or a control circuit, for example, as shown in fig. 9, the memory and control circuit are disposed on the back side of the substrate, and the row data driving circuit (i.e., row data driver), the column scanning driving circuit (i.e., column data driver) and the active matrix light emitting diode display screen are disposed on the front side of the substrate; the storage is a ROM storage or a RAM storage, and the control circuit comprises a data acquisition circuit, a receiving circuit, an analysis circuit, a processing circuit, an amplifier, a digital-to-analog converter, an analog-to-digital converter and/or an image analysis processor and the like.
Thus, the single chip integrated display screen and the circuit can be realized, and the product of the display screen and the electronic circuit packaged on one silicon substrate can be obtained by utilizing the existing semiconductor integrated circuit standard, production equipment and production process. For example, highly integrated electronic products can be manufactured, for example, 55 integrated circuit modules are arranged on a watch, and more than 100 integrated circuit modules on a mobile phone can be manufactured in the way, so that the power and space are saved, and the electronic product has the advantages of rapid packaging, fewer connector terminals, fewer heat sources, fewer connector terminals, greatly reduced damage rate, capability of communicating and communicating between the front side and the back side, and the like.
For example, a light emitting diode integrated display device includes a silicon substrate having two faces; a plurality of light emitting modules are arranged on the first surface of the silicon substrate in an array mode; each light emitting module comprises at least one light emitting diode; a control structure is arranged on the second surface of the silicon substrate; the silicon substrate is provided with a plurality of penetrating electrodes in an array mode between two surfaces of the silicon substrate to form electric signal channels which are respectively connected with each light-emitting diode and the control structure of the second surface; the control structure is respectively connected with the light emitting diodes on the first surface through the penetrating electrodes. Preferably, the light emitting surface of the light emitting diode is non-parallel to the silicon substrate, for example, the light emitting surface of the light emitting diode is non-parallel to the first surface and/or the second surface of the silicon substrate; for another example, the light emitting surface of the light emitting diode is arranged non-parallel to the first surface and/or the second surface of the silicon substrate in the initial state. For example, the light emitting direction of the light emitting surface of the light emitting diode is arranged in non-parallel with the first surface and/or the second surface of the silicon substrate; for another example, the light emitting direction of the light emitting surface of the light emitting diode is arranged non-parallel to the first surface and/or the second surface of the silicon substrate in the initial state. For another example, the light emitting direction of the light emitting surface of the light emitting diode forms an angle of 70 to 110 degrees, preferably 80 to 100 degrees, and preferably 90 degrees with the first surface and/or the second surface of the silicon substrate. For example, the light emitting module has an inverted pyramid shape, i.e., an inverted pyramid or an inverted pyramid; alternatively, the light emitting module has an inverted frustum pyramid structure, for example, the frustum pyramid is a triangular frustum pyramid or a quadrangular frustum pyramid. Thus, the light emitting effect is better. For another example, the light emitting angle of the light emitting module is 70 to 110 degrees, preferably 80 to 100 degrees, and preferably 90 degrees.
For example, a light emitting diode integrated display device includes a silicon substrate having two faces; a plurality of light emitting modules are arranged on the first surface of the silicon substrate in an array mode; the second side of the silicon substrate is provided with a control structure which comprises display electronic circuits and/or a control module; as another example, the control module can include a driver, a controller, a memory, control lines, and/or transmission lines, among others. The first surface and the second surface of the silicon substrate are connected with the light emitting module on the first surface and the control structure of the second surface through the penetrating electrode. For another example, the control structure includes an electronic circuit, a control circuit, a storage device, and a driving circuit, and the specific connection manner is, for example, that each light emitting module is respectively connected to the electronic circuit, the control circuit, the storage device, and the driving circuit.
In the prior art, LEDs are all made on sapphire, and the LED array made on a silicon substrate in the invention and various embodiments thereof is made in a semiconductor integrated circuit mode; in the prior art, a single LED is manufactured on a silicon substrate and designed into a lamp point, no one is used for manufacturing an array LED, and under the condition that the package occupies a larger volume, so that a large margin is caused, and a large number of LEDs cannot be integrated on a small screen. Moreover, the invention and the embodiments thereof can realize an ultrathin LED display screen, achieve the integration of hundreds of millions of micro LED (also called mu-LED) lattices, and arrange a display electronic circuit and a control module, such as the electronic circuit, the control circuit, a storage device and/or a drive circuit, on the other surface of the silicon substrate, and adopt the photoetching technology to manufacture the mu-LED, thereby having the technical effects of large visual angle, high contrast and high density.
For example, a growth platform group of a plurality of light emitting modules is arranged on the first surface of the silicon substrate in an array mode, each light emitting module comprises at least one light emitting diode, correspondingly, the growth platform group comprises at least one growth platform, and each growth platform correspondingly grows one light emitting diode; preferably, the height of the growth stage is 1 to 3 times of the height of the light emitting diode to be grown, so that the position of the target product can be flexibly set. Preferably, the growth stage has an inclination angle, for example, the inclination angle is 1 to 10 degrees. Thus, the LED integrated display device can realize certain light direction. Preferably, the inclination angles and the tendencies of the growth stages in the same growth stage group are the same, and the inclination angles and the tendencies of the growth stages in different growth stage groups are different, so that the method is particularly suitable for realizing multi-angle and large-angle irradiation effects. For another example, a plurality of growth groove sets of light emitting modules are arranged in the first surface array of the silicon substrate, each light emitting module includes at least one light emitting diode, and correspondingly, the growth groove set includes at least one growth groove, and each growth groove correspondingly grows one light emitting diode; preferably, the depth of the growth groove is 1 to 3 times the height of the light emitting diode to be grown, so that the position of the target product can be flexibly set. Preferably, the growth grooves have an inclination angle, for example, the inclination angle is 1 to 10 degrees. Thus, the LED integrated display device can realize certain light direction. Preferably, the inclination angles and inclinations of the growth grooves of the same growth groove group are the same, and the inclination angles and inclinations of the growth grooves of different growth groove groups are different.
For example, a side array of the silicon substrate is grown with light emitting diodes; namely, a plurality of light emitting diodes are grown on the first surface of the silicon substrate in an array mode; unlike the prior art individual fabrication process, the present invention and its embodiments are direct growth LED arrays. Preferably, each of the light emitting diodes is disposed in one-to-one correspondence with each of the transmissive electrodes, and each of the light emitting diodes is connected to one of the transmissive electrodes. For example, each of the light emitting diodes is correspondingly provided with one of the transmissive electrodes; the silicon substrate of the present invention and its embodiments has a mu-LED on one side, a control portion on the other side, and a through electrode passing through the middle, for example, a through electrode passing under each of the LEDs. For better instant heat conduction, the penetration electrode is, for example, cylindrical or truncated-cone-shaped. Preferably, a plurality of nano-channels are further arranged on the silicon substrate, and each nano-channel penetrates through two sides of the silicon substrate, so that when the temperature of the mu-LED side is higher, micro-convection to a certain degree can be realized through the nano-channels. For example, the nanochannel is cylindrical with a radius of 1 to 5 nanometers. Preferably, each light emitting module or each light emitting diode is correspondingly provided with one nanochannel.
For another example, a plurality of the light emitting diodes share one of the transmissive electrodes; for another example, all the light emitting diodes in each light emitting module share one of the through electrodes, for example, one, two or all the light emitting diodes in each light emitting module share one of the through electrodes. For another example, each of the light emitting diodes in each of the light emitting modules is respectively connected to different transmissive electrodes. Preferably, a plurality of connectors are arranged on the first surface of the silicon substrate, each connector corresponds to each penetrating electrode one by one, and each connector is connected with one penetrating electrode; each connector is connected with a plurality of light emitting diodes, and each light emitting diode is connected with one connector. For example, the connecting body is a metal conductor, such as a metal sheet, and the connecting body is a copper piece; for example, a plurality of the light emitting diodes are respectively connected with the connecting body, and are connected with one penetrating electrode through the connecting body, so that the connection with the control structure is realized. For another example, each of the connectors is disposed in one-to-one correspondence with each of the transmissive electrodes, each of the connectors is connected to one of the transmissive electrodes, and each of the connectors is connected to one of the light emitting modules; for example, one, two or all of the light emitting diodes in each of the light emitting modules are connected with one of the connectors; for another example, each of the light emitting diodes in each of the light emitting modules is connected to a different connector. Therefore, the connection of each light emitting diode of the light emitting diode integrated display device can be flexibly adjusted according to the actual required control light emitting mode.
For example, the size and the gap of the light emitting diode are designed according to practical situations, for example, in the case of light emitting diodes which are grown in a trial mode, namely, mu-LEDs, the side length of each square of the light emitting diode is as follows: 10-6Rice-10-4Rice, i.e., 1 micron to 100 microns; or, the minimum side length of the rectangle of each light emitting diode is as follows: 10-6Rice-10-4Rice, i.e., 1 micron to 100 microns; by adopting the structural design of the invention and the embodiments thereof, the distance between the two light-emitting diodes is 10-20% of the size of a single light-emitting diode; the size of the LED integrated display device is as follows: 10mm x 10mm to 500mm x 500 mm; because of high luminous efficiency and low normal working power, the heat dissipation can be directly conducted by the silicon substrate and also conducted by the penetrating electrode.
In order to achieve better heat dissipation effect, for example, each penetrating electrode is provided with a copper pillar electrode, and the copper pillar electrode has good electric conduction effect and heat dissipation effect, and is particularly suitable for large-scale high-density array arrangement of the mu-LED. In order to reduce the weight, it is preferable that the copper pillar electrode is disposed in a hollow manner, for example, the copper pillar electrode is cylindrical, so that on one hand, the requirement of heat dissipation is met, and on the other hand, resources are saved and the weight is reduced. For another example, the copper pillar electrode is cylindrical or truncated cone-shaped, wherein a plurality of cavity structures are arranged, and the cavity structures are cylindrical; preferably, the axis of the cylinder of the cavity structure is parallel to the axis of the copper pillar electrode. Preferably, the copper pillar electrode is arranged away from the end portion of the light emitting diode in a flanging mode, namely the position of the back electrode is arranged in a flanging mode, so that the heat conduction effect of the copper pillar electrode on the light emitting diode is better, and the large-scale micro-lattice is further enabled to be feasible. Further, the copper column electrode is arranged away from the end flanging of the light emitting diode and forms a gear-like shape, for example, a hollow gear-like shape or a gear-like shape with a plurality of through holes in the middle is formed, and the gear-like shape is similar to a petal; the gear-like shape is provided with a groove part and a convex part, wherein the groove part and the convex part are arranged in a non-meshed mode, and the design is convenient for heat dissipation and electricity connection, for example, the area of the groove part is smaller than that of the convex part; for example, the protrusion has an isosceles trapezoid structure and an arch structure, the isosceles trapezoid structure is at an end of the protrusion close to the center of the gear-like shape, the arch structure is at an end of the protrusion far from the center of the gear-like shape, and a longer base line of the isosceles trapezoid structure is equal to a length of a chord of the arch structure.
Preferably, each of the light emitting modules includes a plurality of secondary luminescent materials emitting different colors by changing primary colors of the light emitting diodes, such as: each light emitting module comprises a plurality of different color fluorescent powder or quantum dot materials with different particle sizes, wherein the different color fluorescent powder emits different colors by changing the primary colors of the light emitting diodes. Preferably, each light emitting module includes a plurality of light emitting diodes emitting different colors, for example, each light emitting module includes a plurality of light emitting diodes emitting different colors by different color phosphors or different quantum dot materials. For example, each light-emitting module is used as a pixel point, and the light-emitting color and the light-emitting time of the light-emitting module are controlled through the control structure of the second surface. Thus, the rich dot matrix display effect with small area can be realized. For example, each light emitting module includes a plurality of light emitting diodes emitting different colors by different color phosphors. For another example, each light emitting module includes a plurality of light emitting diodes emitting at least two colors by phosphors of respective colors. For another example, each light emitting module includes a plurality of light emitting diodes emitting at least three colors by phosphors of respective colors.
Preferably, each light emitting module comprises color pixels of at least three basic colors; wherein the basic colors include a primary color of red, a primary color of blue, and a primary color of green. For example, the light emitting module includes red phosphor and green phosphor. In this way, a three-color mu-LED array can be made. Preferably, the basic color further includes a yellow primary color or a white primary color. For example, the basic color further includes a yellow-based phosphor or a white-based phosphor. For example, the basic color further includes a yellow primary color excited by a yellow primary phosphor or a white primary color excited by a white primary phosphor. For example, the light emitting module includes a yellow phosphor or a white phosphor. In this way, a four-color mu-LED array can be made. For example, the blue light is directly transmitted out or transmitted out through a transparent electrode by adopting a fluorescent powder process, green fluorescent powder is added to the blue light to form green light, and red fluorescent powder is added to the blue light to form red light; for another example, a yellow phosphor is added to the blue light to form white light, and so on.
Preferably, each of said light emitting modules comprises at least one group III-V compound light emitting diode emitting a primary color of blue light. For example, the pixel of the blue primary color is a silicon-based LED of III-V compound blue light. And/or the pixel point of the red primary color is a light-emitting diode of III-V group compound blue light of a silicon substrate, and the red light is generated by secondary light emission of nitrogen-based red fluorescent powder on the surface. And/or the pixel point of the green primary color is a light-emitting diode of III-V group compound blue light of the silicon substrate, and green light is generated by secondary light emission of green silicate fluorescent powder on the surface.
Yet another embodiment of the present invention is as follows: a manufacturing method of a light emitting diode integrated display device, for manufacturing the light emitting diode integrated display device according to the above embodiments, the manufacturing method comprising the steps of: a method for manufacturing a light emitting diode integrated display device includes the steps of: etching the first surface of the silicon substrate to form a silicon surface array; epitaxially growing a light emitting diode array on the surface of the silicon surface array; forming at least one non-volatile memory on the surface of the silicon substrate in the vicinity of each light emitting diode; manufacturing a column scanning driver and a row data driver on a first surface of a silicon substrate; making column and row metal wires on the first surface of the silicon substrate, connecting the column scanning driver and the row data driver to each light-emitting diode, and connecting the non-volatile memory; dry etching a through hole on the second surface of the silicon substrate, insulating the inner surface of the through hole, filling the through hole with metal, and forming a back electrode connected with the two surfaces; manufacturing a digital signal processor and an analog signal processor on a second surface of the silicon substrate; manufacturing and forming a secondary luminescent material array on the surface of the light-emitting diode by adopting photoetching and thin film etching technologies; and arranging a transparent protective layer on the surface of the light-emitting diode integrated display device.
Referring to fig. 8, for example, the manufacturing method includes the following steps:
● etching the first surface of the silicon substrate to form a silicon (111) surface array;
● epitaxially growing an array of light emitting diodes on a surface of a silicon (111) area array; epitaxially growing an array of light emitting diodes on a silicon (111) area array surface, for example using MOCVD, MBE or ALD techniques;
● forming at least one non-volatile memory on the surface of the silicon substrate in the vicinity of each light emitting diode;
● preparing a column scan driver and a row data driver on the first surface of the silicon substrate;
● forming column and row metal traces on the first side of the silicon substrate, connecting a column scan driver and a row data driver to each of the LEDs, and a non-volatile memory;
● dry etching a via on the second surface of the silicon substrate, insulating the inner surface of the via, filling the via with metal, and forming a back electrode connected to the two surfaces;
● related electronic circuits are made on the second side of the silicon substrate, such as: electronic controllers, central data processors, image processors, signal amplifiers, digital-to-analog converters, analog-to-digital converters, memory, signal sensors, and the like;
● forming ITO transparent electrode on the surface of the LED array;
● the secondary luminescent material array is formed on the surface of the LED by photolithography and thin film etching techniques, such as: phosphors of different colors, or quantum dot arrays of different particle sizes, to regularly emit three primary colors including at least red, blue, and green;
● A transparent protective layer is covered on the surface of the LED integrated display device to form a touch-capacitance position-sensitive touch screen with the nonvolatile memory under the transparent protective layer.
Yet another embodiment of the present invention is as follows: a manufacturing method of a light emitting diode integrated display device, for manufacturing the light emitting diode integrated display device according to the above embodiments, the manufacturing method comprising the steps of: etching the first surface of the silicon substrate; epitaxially growing a light emitting diode array; dry etching the through hole, insulating the surface of the through hole, filling the through hole with metal, and forming a back electrode; a control structure is arranged on the second surface of the silicon substrate; forming an ITO transparent electrode on the surface of the light emitting diode array; and forming a fluorescent powder array by adopting a photoetching technology. For example, a three-color phosphor array is formed using photolithography. After the through holes are etched by the dry method, the surface of the through holes is subjected to insulation treatment, and then the through holes are filled with metal to form the back electrode. For example, an insulating layer is provided on the surface of the hole. As another example, the second side of the silicon substrate is provided with control structures on the back electrode or on the basis of the back electrode.
For example, the metal filling holes are realized by using a chemical vapor deposition method. For another example, the dry etching through holes is realized by a plasma etching method. Preferably, the light emitting diode array is epitaxially grown at 1200 degrees celsius, wherein the 1200 degrees celsius includes a temperature range of 1200 degrees celsius ± 30 degrees celsius. As another example, the LEDs are processed at 1200 degrees celsius. Preferably, the second side of the silicon substrate forms a back electrode at 700 degrees celsius, and the control module is arranged. For example, the second side of the silicon substrate forms a back electrode at 700 degrees celsius, and as another example, the second side of the silicon substrate forms a back electrode at 700 degrees celsius, and the control module is disposed with the back electrode. Wherein, the temperature range of 700 degrees centigrade +/-20 degrees centigrade is included.
In one embodiment of the invention, a first surface of a silicon substrate is etched as shown in fig. 1 to form a plurality of array boss structures; for example, a silicon nitride protective layer is formed by photolithography, a silicon substrate is directionally etched by plasma, and then the silicon nitride protective layer is removed. Then, as shown in fig. 2, MOCVD epitaxially grows an array of 3-5 group semiconductor light emitting diodes, for example, growing a 3-5 group semiconductor light emitting diode species on a silicon substrate of a light emitting diode integrated display device as shown in fig. 8. Before or after the 3-5 family semiconductor light emitting diode array is epitaxially grown by MOCVD, as shown in FIG. 3, the holes are etched by plasma, and the holes are filled with vapor deposition metal after the insulating treatment is carried out on the surfaces of the holes to form a back electrode; then, a control structure, including electronic circuits and related driving control, etc., is fabricated on the back side of the silicon substrate, as shown in fig. 4, which has a silicon substrate 100, a control structure 200, a through electrode (also called vertical electrode) 300 connected to the substrate side, and an LED chip 400, wherein the control structure includes electronic circuits, a driver, a controller, and/or a memory, etc. Then, as shown in fig. 5, an ITO transparent electrode 500 is formed on the surface of the light emitting diode array; then, as shown in fig. 6, a 3-color phosphor array is formed using a semiconductor photolithography technique, thereby forming a first phosphor layer 420, a second phosphor layer 430, or a third phosphor layer 440 on a portion of the epitaxially grown LED chip 410. The cross-sectional view of the resulting color micro LED display screen structure is shown in fig. 7.
For another example, the operating principle of the active matrix led display and its partially enlarged schematic view are shown in fig. 10, the active matrix led display is implemented by row data driving and column scanning driving, a row data driver and a column scanning driver are disposed on the front surface of the substrate, the column scanning driver scans the columns from top to bottom, each row is scanned by the row data driver, the row data driver transmits signals to another point, the rows and the columns are driven in a mutually matched manner, an active matrix is disposed on the front surface of the substrate, one end of the active matrix is connected to the column scanning driver, the other end is connected to the row data driver, and each light emitting module includes a light emitting diode and a nonvolatile memory. As shown in fig. 11, a SiNx protective film 110 is disposed on a silicon substrate 100, and a monocrystalline silicon substrate 100 is wet-etched with KOH acid to form an inverted pyramid-shaped Si-plane array 120; because MOCVD has coefficient of thermal expansion and cold contraction, so as to manufacture and etch, and the minimal unit is defined, the expansion force of the surface caused by etching can not damage the defined minimal unit, thereby ensuring that the device can not be broken; then, the epitaxial growth of the LED is carried out on the substrate, and the LED only grows on the position without the SiNx protective film 110 on the silicon substrate. Referring also to fig. 8, the upper 7 layers of the silicon substrate Si (111) are transition layers with optical reflection, which can be reflected back by using multi-layer thin film refractive index, and like a mirror, the 8 th layer is a positive electrode, the upper two layers are light emitting diodes, and the upper two layers are negative electrodes. Then etching and selectively cleaning the surface of the silicon substrate as shown in FIG. 12, for example, photoetching and dry etching the SiNx protective film; then, growing a semiconductor integrated circuit on the surface of the silicon substrate as shown in fig. 13, wherein the surface of the silicon substrate is provided with a III-V group semiconductor light emitting diode array 130, a row data driving circuit 140, a column scanning driving circuit 150 and a nonvolatile memory 160 on the Si surface; then, a transparent protection layer 180 is arranged on one surface of the silicon substrate, and a control structure is manufactured on the other surface of the silicon substrate, as shown in fig. 14, the control structure comprises a row data line 141, a column scanning line 151, a control structure 200 and a penetrating electrode 300; the blue light is then secondarily converted into red and green light using a phosphor or quantum dot array, as shown in fig. 15, to form a blue/green/red three-color light emitting diode array 170. The led integrated display device, i.e., the active matrix color led integrated display screen, is obtained, and its structural cross section is shown in fig. 16.
For another example, the method for manufacturing the light emitting diode integrated display device is used for manufacturing a structure having the light emitting diode integrated display device according to any one of the above embodiments.
For example, one particular method of manufacture or production includes the steps of:
1. etching a plane on a silicon substrate, making a photoetching protective layer, and then etching, wherein the etching is dry etching and wet etching, the dry etching is plasma etching, the wet etching is immersed in acid, and the array is formed after etching.
2. The LEDs are grown epitaxially on the array face, and by MOCVD, the LEDs are grown epitaxially, for example, each LED of silicon nitride is grown, and then each array emits blue light.
3. And etching through holes by using a semiconductor, connecting one electrode on the back of each LED to the other surface of the silicon substrate, etching the through holes by adopting plasma, filling the holes by using metal, filling the holes by using CVD (chemical vapor deposition), and forming electrodes for connecting the substrate to be vertical, namely vertical electrodes, wherein one electrode is arranged below each LED, and the production process of the LEDs is more than 800 ℃, preferably 1200 ℃.
4. The other side of the silicon substrate is used as a back electrode at 700 ℃, and then a control structure, namely an electronic control part, comprising an electronic circuit, a control circuit, a storage device and/or a driving circuit and the like is arranged, in the process, the LED (the LED is 1200 ℃ C.) is not influenced, and the LED is in an intermediate state at the moment, is blue and emits monochromatic light.
5. And plating a transparent electrode on the layer of the LED, and forming the other electrode of the LED to form an ITO transparent electrode.
6. Green phosphor is added to blue light to form green light, red phosphor is added to blue light to form red light, and the original blue light is reserved. As another example, a yellow phosphor can be added to the blue light to create white light, which can be used to make the color brighter, or white light can be used or not.
As another example, the manufacturing method includes the steps of:
referring to fig. 11, a silicon substrate is fabricated and etched by MOCVD with a coefficient of thermal expansion and contraction; the minimum unit is defined, so that the expansion force of the surface is caused during manufacturing and etching, the defined minimum unit cannot be damaged, and the device cannot be broken; each light emitting module includes three LEDs and a nonvolatile memory to form a pixel, and a surface of the nonvolatile memory is not exposed to protect the nonvolatile memory.
Then, an LED is epitaxially grown on the substrate, and the LED is grown only on the silicon substrate (111) and not on the protective layer (SiNx protective film 110), that is, on the silicon nitride. The 111 plane of the silicon substrate, the upper 7 layers are transition layers with optical reflection function, and can be reflected back by using the refractive index of the multi-layer film, similarly to a mirror, the 8 th layer is a positive electrode, the upper two layers are light emitting diodes, and the upper two layers are the negative electrodes of the electrodes.
Referring to fig. 12, the SiNx protective film is etched, the surface of the silicon substrate is selectively cleaned, and the 111 surface of silicon is exposed again, so that the LED can be grown.
Referring to fig. 13, a semiconductor integrated circuit, a nonvolatile memory, and a row data driver and a column scan driver are grown on a surface of a silicon substrate. Then, opening an anode electrode of the exposed light-emitting diode by photoetching and dry etching, exposing the anode of the LED, and opening an opening on the corner of the LED; then, row and column data lines and scanning lines are manufactured, and electrode connecting lines are used for connecting the row and column lines and the LED positive electrode with a nonvolatile memory connecting line; then covering a transparent SiOx protective layer, namely a transparent protective layer 180, and thus, protecting the SiOx protective layer with silicon oxide to form a blue display screen; then dry etching, CVD chemical metal filling forms the penetration electrode, by inverting the silicon substrate, the penetration electrode is arranged above the row and column driver, i.e. the row data driver and the column scan driver.
Referring to fig. 14, control structures, such as data acquisition circuitry, receiving circuitry, analysis circuitry, processing circuitry, amplifiers, digital-to-analog converters, analog-to-digital converters, and/or image analysis processors, etc., are fabricated on the other side of the silicon substrate.
Referring to fig. 15, a secondary light emitting material is applied to selectively make a red secondary light emitting lattice and a green secondary light emitting lattice, the dots are exposed in a photolithography manner, and a photosensitive material is left, for example, a red or green dot is selected by photolithography, and then a red or green material, such as red phosphor or quantum dots, green phosphor or quantum dots, is plated; non-selected portions of the red and green materials are then cleaned.
Thus, an active light emitting diode display panel whose cross section can be referred to fig. 16 can be obtained.
Like this, can obtain millions of LED on one face, every LED all is the pixel, and the light that sends has stability very much, and the display efficiency is high, and display screen thickness is ultra-thin, can be applied to cell-phone, flat board, PC, the display screen that internet, thing networking used to and wearable display screen etc. can also be used for realizing simulation and virtual three-dimensional display, have rich colors, and resolution ratio is high, the effect of power saving.
For another example, the light emitting diode integrated display device is manufactured by the manufacturing method described in any one of the above embodiments.
Furthermore, the light emitting diode integrated display device of the invention and the embodiments thereof can achieve the following technical effects through experiments:
ultra low power consumption-existing 1/10 power;
ultrahigh resolution-1080 p high definition;
ultra-thin device-1 mm thick watch;
the super-large visual angle is-160 degrees;
ultra high contrast-100% brightness contrast;
low cost-large scale integration with the substrate.
Further, the embodiments of the present invention further include the technical features of the above embodiments, a light emitting diode integrated display device formed by combining the technical features of the above embodiments, and a method for manufacturing the same.
The technical features mentioned above are combined with each other to form various embodiments which are not listed above, and all of them are regarded as the scope of the present invention described in the specification; also, modifications and variations may be suggested to those skilled in the art in light of the above teachings, and it is intended to cover all such modifications and variations as fall within the true spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A light emitting diode integrated display device comprising a silicon substrate having two faces;
a plurality of growth table groups of light-emitting modules are arranged on the first surface of the silicon substrate in an array manner; each light emitting module comprises at least one light emitting diode and a nonvolatile memory; the growth platform group comprises at least one growth platform, each growth platform correspondingly grows a light-emitting diode, the height of each growth platform is 1-3 times of the height of the light-emitting diode to be grown, each growth platform has an inclination angle, the inclination angles and the inclination directions of the growth platforms of the same growth platform group are the same, and the inclination angles and the inclination directions of the growth platforms of different growth platform groups are different;
each light-emitting module is controlled by a column scanning driver through at least one column metal connecting line and controlled by a row data driver through at least one row metal connecting line;
a digital signal processor and an analog signal processor are arranged on the second surface of the silicon substrate;
the silicon substrate is provided with a plurality of penetrating electrodes in an array mode between two surfaces of the silicon substrate, and the penetrating electrodes are respectively connected with a row data driver, a column scanning driver, a digital signal processor and an analog signal processor on the second surface to form the light-emitting diode integrated display device; the second surface of the silicon substrate is also provided with a control structure, and each penetrating electrode forms an electric signal channel which is respectively connected with each light-emitting diode and the control structure of the second surface;
the plurality of light emitting diodes share one penetrating electrode; the first surface of the silicon substrate is provided with a plurality of connectors, each connector corresponds to each penetrating electrode one by one, and each connector is connected with one penetrating electrode; each connecting body is connected with a plurality of light emitting diodes;
the penetrating electrode is a copper column electrode, the copper column electrode is arranged in a hollow mode, and the copper column electrode is arranged away from a flanging of the end part of the light-emitting diode and forms a gear-like shape; the gear-like shape is provided with a groove part and a convex part, wherein the groove part and the convex part are arranged in a non-meshed mode; the convex part is provided with an isosceles trapezoid structure and an arch structure, one end of the convex part close to the center of the gear-like shape is of the isosceles trapezoid structure, one end of the convex part far away from the center of the gear-like shape is of the arch structure, and the longer bottom line of the isosceles trapezoid structure is equal to the length of a chord of the arch structure;
the silicon substrate is also provided with a plurality of nano-channels, each nano-channel respectively penetrates through two sides of the silicon substrate, and each light-emitting module or each light-emitting diode is correspondingly provided with one nano-channel.
2. The led integrated display device of claim 1, wherein the led integrated display device is configured to display still or moving color images and video.
3. The led integrated display device of claim 1, wherein each of said light emitting modules comprises at least one III-V compound led emitting a primary color of blue light.
4. The led integrated display device of claim 1, wherein each of said light emitting modules comprises a plurality of secondary light emitting materials emitting different colors by changing the primary colors of the leds.
5. The led integrated display device of claim 1, wherein each of said light modules comprises color pixels of at least three basic colors; wherein the basic colors include a primary color of red, a primary color of blue, and a primary color of green.
6. The led integrated display device of claim 1, wherein each of said non-volatile memories comprises at least two transistors.
7. The LED integrated display device of claim 1, wherein the light emitting surface of the LED is non-parallel to the silicon substrate, the light emitting module has an inverted frustum structure, and the light emitting angle of the light emitting module is 70-110 degrees.
8. The led integrated display device of claim 1, wherein the digital signal processor is a digital electronic device comprising: a digital analyzer, a digital processor, an image processor, a touch screen processor, a volatile memory, and a non-volatile memory;
and/or, the analog signal processor is an electronic device comprising: the touch screen comprises an optical signal sensor, an electric signal sensor, an audio signal sensor, an analog signal amplifier, an analog signal-to-digital signal converter, a digital signal-to-analog signal converter, an audio signal processor and a touch screen signal processor.
9. The LED integrated display device of claim 1, wherein the column scan driver and the row data driver are further disposed on the first side of the silicon substrate;
and/or a transparent protective layer covering each light-emitting module is further arranged on the first surface of the silicon substrate, and the transparent protective layer and a nonvolatile memory below the transparent protective layer form a touch screen electronic position sensor.
10. A manufacturing method of a light emitting diode integrated display device for manufacturing a structure having the light emitting diode integrated display device according to any one of claims 1 to 9, the manufacturing method comprising the steps of:
etching the first surface of the silicon substrate to form a silicon surface array;
epitaxially growing a light emitting diode array on the surface of the silicon surface array;
forming at least one non-volatile memory on the surface of the silicon substrate in the vicinity of each light emitting diode;
manufacturing a column scanning driver and a row data driver on a first surface of a silicon substrate;
making column and row metal wires on the first surface of the silicon substrate, connecting the column scanning driver and the row data driver to each light-emitting diode, and connecting the non-volatile memory;
dry etching a through hole on the second surface of the silicon substrate, insulating the inner surface of the through hole, filling the through hole with metal, and forming a back electrode connected with the two surfaces;
manufacturing a digital signal processor and an analog signal processor on a second surface of the silicon substrate;
manufacturing and forming a secondary luminescent material array on the surface of the light-emitting diode by adopting photoetching and thin film etching technologies;
and arranging a transparent protective layer on the surface of the light-emitting diode integrated display device.
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| CN107871752B (en) * | 2017-10-17 | 2019-11-15 | 深圳市华星光电技术有限公司 | Miniature LED display panel and miniature light-emitting diode display |
| CN108346675B (en) * | 2017-12-28 | 2024-06-25 | 海迪科（南通）光电科技有限公司 | LED or LD array device and its preparation method |
| US20190333444A1 (en) * | 2018-04-25 | 2019-10-31 | Raxium, Inc. | Architecture for light emitting elements in a light field display |
| CN109904300A (en) * | 2019-03-15 | 2019-06-18 | 索罗紫光(上海)科技有限公司 | A kind of vehicle lamp light source device and car light mould group |
| CN110911437A (en) * | 2019-12-06 | 2020-03-24 | 业成科技（成都）有限公司 | Micro light-emitting diode driving backboard and display panel |
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