CN106645808B - A kind of Kelvin probe force microscopy of multi-parameter synchro measure - Google Patents
A kind of Kelvin probe force microscopy of multi-parameter synchro measure Download PDFInfo
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Abstract
A kind of Kelvin probe force microscopy of multi-parameter synchro measure, it is related to Kelvin probe force microscopy, in order to solve the problems, such as that traditional Kelvin probe force microscopy cannot achieve the surface topography of sample, mechanical characteristic characterization synchronous with surface local potential.DC power supply of the invention is for generating direct current signal, and the direct current signal is loaded between conducting probe and sample, signal generator generates the identical signal in three tunnels, frequency is identical as conducting probe second-order resonance frequency, the first via is led to after adder is superimposed with the signal that Arbitrary Waveform Generator generates for controlling No. three piezo controllers, and the piezoelectric ceramics of No. three piezo controller driving probes on hand is made；Second tunnel is sent to lock-in amplifier as reference signal；Third road is loaded between conducting probe and sample after passing through 90 degree of phase shifter phase shift；The signal of lock-in amplifier output is sent to host computer.The present invention is suitable for the measurement of the surface topography, mechanical characteristic and surface local potential of sample.
Description
Technical field
The present invention relates to Kelvin probe force microscopies.
Background technique
Kelvin probe force microscopy (Kelvin Probe Force Microscopy, KPFM) is that scanning probe is micro-
A member in mirror (Scanning probe microscopy, SPM) family, it is by Kelvin probe technology and atomic force microscopy
Mirror (Atomic force microscopy, AFM) combines, and realizes the characterization of sample surfaces local potential.Traditional Kelvin
The surface topography of sample, mechanical characteristic and surface local potential may be implemented by different measurement methods for probe force microscopy
Characterization.Such as " lifting mode (lift-up mode) " can obtain the surface topography and part electricity of sample by twice sweep
Gesture, " resonance mode (tapping mode) " can obtain surface topography and the local potential of sample by single pass simultaneously,
And " peak value force mode (peak force mode) " is a kind of discontinuous connection mode, when scanning, every line carried out twice sweep, for the first time
Scanning obtains the surface topography and mechanical characteristic of sample, and " lifting mode " second of scanning is then utilized to obtain the surface office of sample
Portion's potential.Although the characterization of sample surface morphology, mechanical characteristic and surface local potential may be implemented in existing method, not
It is able to achieve the synchronous characterization of these parameters, that is to say, that surface topography, the mechanics of sample cannot be obtained simultaneously by single pass
Characteristic and surface local potential.
Summary of the invention
Mechanical characteristic and surface local potential are for understanding the function, microbial activity and many machines-of microelectronic component
Electricity and biological phenomenon are very important, and many measurements have timeliness and machine-electromechanical coupling characteristic.In addition, probe and sample
Contact potential difference between product will cause error to the measurement of sample surface morphology.Therefore, at the same measure sample surface topography,
Mechanical characteristic and surface local potential are significantly.It cannot achieve sample in view of traditional Kelvin probe force microscopy
Surface topography, mechanical characteristic it is synchronous with surface local potential characterization, the present invention provides a kind of multi-parameter synchro measures
Kelvin probe force microscopy.
A kind of Kelvin probe force microscopy of multi-parameter synchro measure of the present invention include XY microns of positioning tables 12,
XYZ nanometer positioning platform 13, Kelvin scan sample stage 15, XYZ microns of positioning tables 8, one-dimensional wide range and adjust microfluidic platform 10, probe
Hand bracket 9, probe hand 7, host computer, DC power supply, Arbitrary Waveform Generator, capture card, signal generator, phase shifter, locking phase are put
Big device, four-quadrant position detector, semiconductor laser generator, No.1 piezo controller, No. two piezo controllers and No. three pressures
Electric controller；
Kelvin is scanned sample stage 15 and is fixed on XYZ nanometer positioning platform 13, and XYZ nanometer positioning platform 13 is fixed on XY microns
On positioning table 12；Conducting probe 7-4 is installed on probe hand 7 and is able to drive conducting probe 7-4 i.e. Z-direction shifting along the vertical direction
Dynamic piezoelectric ceramics 7-2, probe hand 7 are fixed on probe hand bracket 9, and probe hand bracket 9 is fixed on XYZ microns of positioning tables 8,
XYZ microns of positioning tables 8 are fixed on one-dimensional wide range adjustment microfluidic platform 10；
Host computer drives Kelvin to scan the piezoelectric ceramics movement on sample stage 15, passes through two by No.1 piezo controller
Piezoelectric ceramics on number piezo controller driving XYZ nanometer positioning platform 13 is mobile, drives probe hands 7 by No. three piezo controllers
On piezoelectric ceramics it is mobile；
On the laser light incident to conducting probe 7-4 that semiconductor laser generator 18 generates, swash through what conducting probe 7-4 reflected
Light is incident to four-quadrant position detector 4；
The detectable signal of four-quadrant position detector 4 is sent to host computer by capture card, which is also used as instead
Feedback signal is sent to lock-in amplifier；
The direct current signal is loaded into conducting probe for generating direct current signal under the control of host computer by DC power supply
Between 7-4 and sample 15-8；
Signal generator generates identical signal (the second-order resonance frequency phase of the signal frequency and conducting probe 7-4 in three tunnels
Together), the first via is led to after adder is superimposed with the signal that Arbitrary Waveform Generator generates for controlling No. three piezo controllers, makes No. three
Piezo controller drives the piezoelectric ceramics 7-2 on probe hand 7；Second tunnel is sent to lock-in amplifier as reference signal；Third
Road is loaded between conducting probe 7-4 and sample 15-8 after passing through 90 degree of phase shifter phase shift；
The signal of lock-in amplifier output is sent to host computer by capture card.
Following advantages of the present invention: 1, breaching traditional KPFM can not mechanical characteristic to sample characterization synchronous with local potential
The characteristics of, realize same pacing in the case where single pass to the surface topography of sample, mechanical characteristic and local potential difference
Amount；2, the Kelvin probe force microscopy device of multi-parameter synchro measure, makes AFM can be used for the measuring multiple parameters of sample surfaces,
Including pattern, mechanical characteristic and local potential；3, the Kelvin probe force microscopy device of multi-parameter synchro measure be into
One step realizes that expanding (such as conductivity, resistivity) to the measuring multiple parameters of test object provides technical foundation.It is opened with traditional
You compare literary probe force microscopy, and this method can satisfy the requirement of timeliness and Multi-parameter coupling characteristic in measurement, and mend
Electrostatic force error caused by topography measurement has been repaid, has been had in nanometer manufacture, test, characteristic present and biological field higher
Availability and operability have very high practical value.
Detailed description of the invention
Fig. 1 is the schematic illustration of Kelvin probe force microscopy described in embodiment one, wherein 21 swash for semiconductor
Optical generator, 22 be four-quadrant position detector,
Fig. 2 be the driving signal that No. three piezo controllers drive piezoelectric ceramics 7-2 on probe hands 7 in embodiment one,
The waveform diagram of force feedback signal and phase-feedback signal, driving signal are integrally in gaussian-shape, and the sinusoidal waveform of laminated thereto is
Um；
Fig. 3 is the structural schematic diagram of the mechanical part of Kelvin probe force microscopy described in embodiment one, wherein
1: rack；2: four-quadrant position detector two-dimension adjustment microfluidic platform；3: one-dimensional adjustment microfluidic platform I；4: four-quadrant limit
Set detector；5: reflection laser convex lens；6: laser mirror；7: probe hand；8:XYZ microns of positioning tables；9: probe hand bracket；
10: one-dimensional wide range adjusts microfluidic platform；11: table top；12:XY microns of positioning tables；13:XYZ nanometer positioning platform；14: sample stage branch
Frame；15: Kelvin scans sample stage；16: incident laser focuses convex lens；17: one-dimensional adjustment microfluidic platform II；18: semiconductor swashs
Optical generator；19: laser generator angle-adjusting mechanism；20: optical microscopy；
Fig. 4 is the structural schematic diagram of one middle probe hand of embodiment, wherein 7-1: probe hand pedestal；7-2: piezoelectric ceramics；
7-3: probe support；7-4: conducting probe；7-5: shielding piece；7-6: conducting probe fixed plate；7-7: connecting terminal；
Fig. 5 is the structural schematic diagram that Kelvin scans sample stage in embodiment one, wherein (a) is that Kelvin scans sample
The front view of sample platform is (b) top view of (a)；15-1: Kelvin scans sample sewing platform base；15-2: piezoelectric ceramics；15-3: sample
Product seat；15-4: connecting line；15-5: screw；15-6: bunch block；15-7: copper tabletting；15-8: sample；15-9: insulation is solid
Determine screw；
Fig. 6 is polystyrene/light binding grating measurement result in embodiment two.
Specific embodiment
Specific embodiment 1: embodiment is described with reference to Fig. 1, a kind of same pacing of multi-parameter described in present embodiment
The Kelvin probe force microscopy of amount, including XY microns of positioning tables 12, XYZ nanometer positioning platform 13, Kelvin scan sample stage 15,
XYZ microns of positioning tables 8, probe hand bracket 9, probe hand 7, host computer, DC power supply, are appointed at one-dimensional wide range adjustment microfluidic platform 10
Meaning wave producer, capture card, signal generator, phase shifter, lock-in amplifier, four-quadrant position detector, semiconductor laser hair
Raw device, No.1 piezo controller, No. two piezo controllers and No. three piezo controllers；
Kelvin is scanned sample stage 15 and is fixed on XYZ nanometer positioning platform 13, and XYZ nanometer positioning platform 13 is fixed on XY microns
On positioning table 12；Conducting probe 7-4 is installed on probe hand 7 and is able to drive conducting probe 7-4 i.e. Z-direction shifting along the vertical direction
Dynamic piezoelectric ceramics 7-2, probe hand 7 are fixed on probe hand bracket 9, and probe hand bracket 9 is fixed on XYZ microns of positioning tables 8,
XYZ microns of positioning tables 8 are fixed on one-dimensional wide range adjustment microfluidic platform 10；
Host computer drives Kelvin to scan the piezoelectric ceramics movement on sample stage 15, passes through two by No.1 piezo controller
Piezoelectric ceramics on number piezo controller driving XYZ nanometer positioning platform 13 is mobile, drives probe hands 7 by No. three piezo controllers
On piezoelectric ceramics 7-2 it is mobile；
On the laser light incident to conducting probe 7-4 that 18 generator of semiconductor laser generates, reflected through conducting probe 7-4
Laser light incident is to four-quadrant position detector 4；
The detectable signal of four-quadrant position detector 4 is sent to host computer by capture card, which is also used as instead
Feedback signal is sent to lock-in amplifier；
The direct current signal is loaded into conducting probe for generating direct current signal under the control of host computer by DC power supply
Between 7-4 and sample 15-8；
Signal generator generates the identical signal in three tunnels, the second-order resonance frequency phase of the signal frequency and conducting probe 7-4
Together, the first via is led to after adder is superimposed with the signal that Arbitrary Waveform Generator generates for controlling No. three piezo controllers, makes No. three
Piezo controller drives the piezoelectric ceramics 7-2 on probe hand 7；Second tunnel is sent to lock-in amplifier as reference signal；Third
Road is loaded between conducting probe 7-4 and sample 15-8 after passing through 90 degree of phase shifter phase shift；
The signal of lock-in amplifier output is sent to host computer by capture card.
The present invention carries out the principle of the measurement method of multi-parameter synchro measure as shown in Fig. 2, the invention breaches tradition makes
The driving signal for using sinusoidal signal to measure as force-displacement curve, the driving for using gaussian signal to measure as force-displacement curve
Signal, therefore, after probe and sample surfaces are detached from, the distance between probe and sample will keep stablizing (only sub-nanometer
Second order vibration, between point D to point E), which makes full use of the idle stroke in conventional test methodologies to realize more ginsengs to sample
Number synchro measure, specific test process are as follows:
Step 1 drives the piezoelectric ceramics 7-2 on probe hand 7 by No. three piezo controllers, keeps conducting probe 7-4
It moves back and forth up and down；
Step 2 drives the upward servo of XYZ nanometer positioning platform 13 to move closer to sample by No. two piezo controllers, makes to lead
Electric probe 7-4 is contacted with sample 15-8, and continues to increase the maximum force between conducting probe and sample, until conduction is visited
Maximum interaction force between needle 7-4 and sample 15-8 reaches setting value and keeps；
Step 3 drives XYZ nanometer positioning platform 13 to move down by No. two piezo controllers, and moving distance is less than Kai Er
The range of text scanning sample stage 15；
Step 4 scans No. two piezo controllers drivings of the replacement of sample stage 15 using No.1 piezo controller driving Kelvin
XYZ nanometer positioning platform 13 repeats step 2, so that the maximum interaction force between conducting probe and sample is reached setting value, passes through
Signal generator is superimposed mechanical exciting U to No. three piezo controllersm, and cross phase shifter and handed over to load between conducting probe and sample
Galvanic electricity presses UACSin (ω t), by DC power supply between conducting probe and sample load direct current compensation voltage UDC；
Wherein, within a period of motion of conducting probe, the interaction between conducting probe and sample is successively are as follows:
Step 4-1, the piezoelectric ceramics 7-2 on probe hand 7 is driven to move downward by No. three piezo controllers, when conduction is visited
Conducting probe will be attracted down when attraction between needle and sample is greater than the rigidity of conducting probe contacts with sample surfaces, should
Time point is A point；
Step 4-2, after conducting probe and sample contact, the piezoelectricity on probe hand 7 is driven by No. three piezo controllers
Ceramic 7-2 continues to move downward, and continues to increase the maximum force between conducting probe and sample, until conducting probe and sample
Maximum interaction force between product reaches setting value, which is B point；
The Z-direction coordinate value that sample stage 15 is scanned by record B point Kelvin, obtains the surface topography of sample current scan point
Image；The deformation of B point conducting probe and displacement of the piezoelectric ceramics 7-2 from equilbrium position point A ' to point B are recorded, sample is obtained and currently sweeps
The maximum depth of cup image of described point, maximum depth of cup=piezoelectric ceramics 7-2 are led from equilbrium position point A ' to the displacement-of point B
The deformation of electric probe；The equilbrium position point A ' refers to after A point, in conducting probe and sample contact process, conducting probe
Force feedback signal be equal to conducting probe and sample not in contact with when force feedback signal time point；
Step 4-3, conducting probe counter motion is controlled；
When the deformation force of conducting probe is greater than adhesion strength between conducting probe and sample surfaces, conducting probe is from sample
Surface pops out, which is C point, records power suffered by C point conducting probe, is working as between sample and conducting probe
The maximum adhesion of preceding scanning element tries hard to picture；
By the power between point B and point C-piezoelectric ceramics 7-2 displacement data converting to force-between conducting probe and sample away from
From data, and DMT models fitting is utilized, sample can be obtained in the equivalent Young's modulus image of the scanning element, the power refers to
Power suffered by conducting probe, wherein DMT model is shown below:
In formula, interaction force of the F between probe and sample, FadhMaximum adhesion power between sample and probe, R
For the needle type radius of probe, δ is depth of cup, E*For equivalent Young's modulus；
The Young's modulus E of sample is obtained according to the Poisson's ratio of the equivalent Young's modulus and sample；
Step 4-4, after conducting probe and sample are detached from, conducting probe continues to rise to stop motion after setting height h,
The time point is D point, and h is greater than 0, and conducting probe is made to keep a period of time, i.e. D point to E point in the height；
Between point D and point E, using lock-in amplifier output phase as feedback signal measurement conducting probe and sample it
Between surface potential difference；The time interval for the initial point distance C point that wherein surface local potential difference starts compensating for is greater than conductive visit
The timeconstantτ of needle 7-4, τ=2Q/ ω, Q are quality factor, and ω is angular frequency, total potential difference between conducting probe and sample
Are as follows:
Δ U=UDC-UCPD+UAC sin(ωt)
In formula, UCPDIt is the intrinsic surface potential difference between probe and sample surfaces；
At this point, the electrostatic force between conducting probe and sample surfaces are as follows:
In formula, C and z are respectively the capacitor and distance between probe and sample.Work as U as can be seen from the above equationDC=UCPDWhen,
Electrostatic force will be eliminated the influence of conducting probe under ω frequency, utilize the available frequency test of lock-in amplifier
The phase and amplitude information of needle feedback signal.The phase signal that lock-in amplifier is exported as feed back input to host computer, on
Position machine is by adjusting UDCEliminate the offset of lock-in amplifier output phase.Work as UDC=UCPDWhen, the offset of lock-in amplifier output phase
It will be eliminated.By recording U at this timeDC, the surface local potential between corresponding conducting probe and sample surfaces can be obtained
Difference (UCPD) image.
Step 5 passes through 13 mobile example of XYZ nanometer positioning platform to next scanning element, repeats step 4 and arrives step 5, obtains
Surface topography image, equivalent Young's modulus image and the surface potential difference image of sample.
Ideally, work as UDC=UCPDWhen, the phase of lock-in amplifier output is 0 degree in step 4, but under normal conditions
Due to the presence of error, the phase of lock-in amplifier output is not 0 degree, the phase exported by record lock-in amplifier,
Obtain corresponding test phase offset error image.
In order to improve the accuracy of measurement result, each scanning element is repeated step 4 more times, chooses intermediate one group of test data
B point Kelvin scan sample stage 15 Z-direction coordinate value be sample current scan point final surface topography；Choose corresponding group number
According to equivalent Young's modulus E*It is worth the final equivalent Young's modulus as sample current scan point；Choose the surface of corresponding group data
Final surface potential difference of the potential difference values as sample current scan point；
Wherein, the moving back and forth up and down of conducting probe 7-4, Kelvin scan sample stage 15 and keep conducting probe 7-4 and sample
The servo motion and 13 mobile example of XYZ nanometer positioning platform that maximum interaction force between product 15-8 is setting value are to next
It is run parallel between the movement three of a scanning element.
Specific embodiment 2: illustrating that present embodiment, present embodiment are to one institute of embodiment in conjunction with Fig. 1 and Fig. 2
The Kelvin probe force microscopy stated further limits, and in present embodiment, the host computer is embedded in by software realization
Measurement module, the measurement module include with lower unit:
Power detection unit: the deformation quantity for the conducting probe 7-4 that acquisition four-quadrant position detector 4 detects in real time, and root
The active force between conducting probe 7-4 and sample is calculated according to the deformation quantity；The active force is equal to deformation quantity and conducting probe 7-4
The product of rigidity；
Surface topography and maximum depth of cup measuring unit: Kelvin is controlled by No.1 piezo controller and scans sample stage
15 rise, and make sample close to conducting probe 7-4, when the maximum force between conducting probe 7-4 and sample reaches setting value,
Record the Z-direction coordinate value of sample stage piezoelectric ceramics；Maximum depth of cup is recorded simultaneously, and the maximum depth of cup is made pottery equal to piezoelectricity
Porcelain 7-2 is from equilbrium position point A ' to the difference of the displacement of point B and the deformation quantity of conducting probe 7-4；Between conducting probe 7-4 and sample
Active force to reach time point corresponding when setting value be B point；The equilbrium position point A ' refers to that after A point, conduction is visited
In needle and sample contact process, the force feedback signal of conducting probe be equal to conducting probe and sample not in contact with when force feedback signal
Time point；
Adhesion strength measuring unit: piezoelectric ceramics 7-2 is controlled by No. three piezo controllers, moves conducting probe 7-4 reversely
It is dynamic, and record conducting probe 7-4 and active force suffered when sample disengaging during reverse movement, the active force as conduction
Maximum adhesion power between probe 7-4 and sample；Corresponding time point is C point at this time；
Equivalent Young's modulus computing unit: the power between B point and C point-piezoelectric ceramics 7-2 is displaced quantity converting to force-
Depth of cup data, and DMT models fitting is utilized, the equivalent Young's modulus of sample, the DMT model can be obtained are as follows:
Interaction force of the F between conducting probe 7-4 and sample, FadhFor the maximum between sample and conducting probe 7-4
Adhesion strength, R are the needle type radius of conducting probe 7-4, and δ is depth of cup, E*For equivalent Young's modulus；
Surface local potential difference measurements unit: the piezoelectric ceramics 7-2 on probe hand 7 is controlled by No. three piezo controllers and is moved
It is dynamic, so that conducting probe 7-4 is continued to move up certain altitude h, h > 0 is maintained at conducting probe 7-4 at height h；It will lock
The phase of phase amplifier output adjusts DC voltage U as feedback signalDCValue, make lock-in amplifier export signal zero,
The U of record at this timeDCValue, the UDCValue be that surface local potential between sample and probe is poor；
Sample mobile unit: XYZ nanometer positioning platform 13 is driven to be moved to next scanning element by No. two piezo controllers.
Above-mentioned measurement module run it is primary after, complete surface topography, the equivalent Young's modulus of sample current scan point with
And the measurement of surface local potential difference.
Measuring surface form unit measures the corresponding sample piezoelectric ceramics Z-direction coordinate value of a B point, institute in each scanning element
There is the surface topography image of the sample stage piezoelectric ceramics Z-direction coordinate value synthetic sample of scanning element；
Maximum depth of cup measuring unit measures the corresponding depth of cup of a B point, all scanning elements in each scanning element
Maximum depth of cup synthetic sample maximum depth of cup image；
Maximum adhesion power measuring unit measures the corresponding adhesion strength of a C point in each scanning element, and all scanning elements are most
The maximum adhesion of big adhesion strength synthetic sample tries hard to picture；
Equivalent Young's modulus computing unit measures an equivalent Young's modulus in each scanning element, all scanning elements it is equivalent
The equivalent Young's modulus image of Young's modulus synthetic sample；
It is poor that surface local potential difference measurements unit in each scanning element measures a surface local potential, all scanning elements
The surface local potential difference image of the value synthetic sample of surface local potential difference.
Before above-mentioned measurement module measurement surface topography, mechanical characteristic and surface local potential difference, first to carry out
Some preparations carry out relevant parameter setting to the measurement module.Detailed process is as follows:
1, system initialization is fixed on specimen holder 15-3, ready sample 15-8 by copper tabletting 15-7 and sample
Conducting probe 7-4 is mounted on probe hand 7, by conducting probe 7-4 and conducting probe fixed plate by 15-8 conductive contact and fixation
7-6 is conductively connected, and Kelvin's scanning sample stage 15 and probe hand 7 are separately mounted to sample platform bracket 14 and probe hand bracket
On 9, and connecting terminal is electrically connected with corresponding equipment；
2, PC control XY microns of positioning tables 12 are mobile, pass through 20 Primary Location sample 15-8 of optical microscopy, selection
Suitable measured zone, and the mobile region is to the field of view center of optical microscopy 20；
3, mobile one-dimensional wide range adjustment microfluidic platform 10 and XYZ microns of positioning tables 8, coarse alignment conducting probe 7-4 make conduction
Probe 7-4 is placed in above measured zone selected in step 2, is adjusted laser direction, is made the laser facula on conducting probe 7-4
Front end center in conducting probe 7-4 cantilever beam；
4, it opens scanning frequency excitation device and frequency sweep operation is carried out to conducting probe 7-4, to obtain the second-order resonance of conducting probe 7-4
Frequencies omega and corresponding quality factor q, and then timeconstantτ=2Q/ ω of conducting probe 7-4 is obtained, and signal is sent out
The set of frequency of raw device is ω；
5, pass through the distance between XYZ microns of positioning table 8 coarse adjustment conducting probe 7-4 and sample 15-8, ready position servo
It controls, and the laser facula on conducting probe 7-4 is readjusted to the front end center of conducting probe 7-4 cantilever beam；
6, Arbitrary Waveform Generator generates control signal, and each period of the control signal is gaussian signal, the control signal
No. three piezo controllers are sent to, No. three piezo controller driving conducting probe 7-4 is made to pump according to gaussian signal；
The power on conducting probe 7-4 is detected by four-quadrant position detector 4, starts SERVO CONTROL, XYZ nanometers is controlled and determines
Position platform 13 is along Z axis fast approaching conducting probe 7-4 and maximum force between the two is kept to be equal to set active force；
7, stop SERVO CONTROL after servo success, XYZ nanometer positioning platform 13 is declined into certain altitude and (is less than Kelvin to scan
The stroke of the piezoelectric ceramics 15-2 installed on sample stage 15), the piezoelectricity installed on sample stage 15 is then scanned by Kelvin makes pottery
Porcelain 15-2 repeats the servo in step 6, continues to keep the maximum force between conducting probe 7-4 and sample 15-8 to be equal to set
Fixed active force；Usual servo frequency is 5-10 times of scan frequency, therefore each scanning element has carried out multiple servo；
8, apply the mechanical accumulation signal U under second-order resonance frequency to conducting probe 7-4 by signal generatorm, and will
(as shown in Fig. 2, within a period of motion of conducting probe 7-4, conduction is visited between point D point and E for the calculating point setting of phase
It is A point at the time of needle 7-4 is in contact during moving down with sample, conducting probe 7-4 is continued to move down until and sample
Active force between product reaches setting value, which is B point, and then conducting probe 7-4 starts counter motion, occurs with sample de-
From at the time of be C point, conducting probe 7-4 continuously rises to stop motion after certain altitude, and is kept for a period of time in the height,
That is D point is between E point, and wherein the initial point of surface local potential difference compensation to the time between C point is greater than time long number τ),
The phase for adjusting Um makes the phase output zero of lock-in amplifier, wherein the second order exciting of conducting probe 7-4 is in Subnano-class
Not, it will not influence the steady contact between conducting probe 7-4 and sample 15-8；
9,90 degree of phase shifter phase shift is set and is opened, applies second-order resonance frequency between conducting probe 7-4 and sample 15-8
Electric accumulation signal U under rateACSin (ω t), at this time due to the work function between conducting probe 7-4 and sample 15-8/surface electricity
The difference of gesture, therefore, between them there are surface potential difference UCPD, will occur partially so as to cause the phase of lock-in amplifier output
It moves；
10, open the Kelvin that is embedded in of host computer and control program, the phase which exports lock-in amplifier as
Feedback signal, control DC power supply export a direct current compensation voltage signal UDCAct on conducting probe 7-4 and sample 15-8 it
Between, to compensate the poor (U of local potential between conducting probe 7-4 and the surface sample 15-8CPD), finally make lock-in amplifier defeated
Phase recovery out is zero, the voltage (U of DC power supply outputDC) will be equal between conducting probe 7-4 and the surface sample 15-8
Poor (the U of local potentialCPD)；
11, Scanning step and number of scan points are set, then start to scan.
The conducting probe of above-mentioned Kelvin probe force microscopy is driven simultaneously by multifrequency state, including: 1) low frequency Gauss
Signal Mechanical Driven (0.5-2kHz), 2) Mechanical Driven under second-order resonance mode, the 3) second-order resonance between probe and sample
Electric excitation under mode.Host computer carries out segmentation scaling down processing to the feedback signal of conducting probe and realizes that distance controlling, potential are mended
It repays and data is fitted, to realize the synchro measure to sample surface morphology, mechanical characteristic and surface local potential.
Polystyrene/light binding grating is measured using the Kelvin probe force microscopy of present embodiment, is scanned
Range is 2.56um*2.56um, and number of scan points is that 256*256. Fig. 6 is polystyrene/light binding grating sample scan image
As a result, wherein (a) is surface topography image, the part of center protrusion is polystyrene, and the sunk part in two sides is light binding,
Its difference in height is 60nm；(b) picture is tried hard to for maximum adhesion；It (c) is maximum depth of cup image；It (d) is equivalent Young's modulus figure
Picture, the Poisson's ratio of polystyrene take 0.33, and therefore, the Young's modulus of polystyrene is 1.93 ± 0.28GPa；It (e) is surface office
Portion's potential image；(f) phase shift errors image, phase error are -0.05 ± 1.01 degree.Table 1 is measurement result, including
Maximum adhesion power, maximum depth of cup, equivalent Young's modulus and surface local potential are poor.
1 measurement result list of table
Claims (1)
1. a kind of Kelvin probe force microscopy of multi-parameter synchro measure, including XY microns of positioning tables (12), XYZ nanometer positionings
Platform (13), Kelvin scan sample stage (15), XYZ microns of positioning tables (8), the adjustment of one-dimensional wide range microfluidic platform (10), probe hand
Bracket (9), probe hand (7), host computer, DC power supply, Arbitrary Waveform Generator, capture card, signal generator, phase shifter, locking phase
Amplifier, four-quadrant position detector, semiconductor laser generator, No.1 piezo controller, No. two piezo controllers and No. three
Piezo controller；
Kelvin is scanned sample stage (15) and is fixed on XYZ nanometer positioning platform (13), and it is micro- that XYZ nanometer positioning platform (13) is fixed on XY
On rice positioning table (12)；Conducting probe (7-4) is installed on probe hand (7) and is able to drive conducting probe (7-4) along vertical side
The piezoelectric ceramics (7-2) mobile to i.e. Z-direction, probe hand (7) are fixed on probe hand bracket (9), and probe hand bracket (9) is fixed
On XYZ microns of positioning tables (8), XYZ microns of positioning tables (8) are fixed on one-dimensional wide range adjustment microfluidic platform (10)；
Host computer drives Kelvin to scan the piezoelectric ceramics movement on sample stage (15), passes through No. two by No.1 piezo controller
Piezo controller drives the piezoelectric ceramics on XYZ nanometer positioning platform (13) is mobile, passes through No. three piezo controllers to drive probe hands
(7) piezoelectric ceramics on is mobile；
On the laser light incident to conducting probe (7-4) that semiconductor laser generator generates, the laser through conducting probe (7-4) reflection
It is incident to four-quadrant position detector；
The detectable signal of four-quadrant position detector is sent to host computer by capture card, which is also used as feedback signal
It is sent to lock-in amplifier；
The direct current signal is loaded into conducting probe (7- for generating direct current signal under the control of host computer by DC power supply
4) between sample (15-8)；
Signal generator generates the identical signal in three tunnels, and the signal frequency is identical as the second-order resonance frequency of conducting probe (7-4),
The first via is led to after adder is superimposed with the signal that Arbitrary Waveform Generator generates for controlling No. three piezo controllers, and No. three piezoelectricity are made
Controller drives the piezoelectric ceramics (7-2) on probe hand (7)；Second tunnel is sent to lock-in amplifier as reference signal；Third
Road is loaded between conducting probe (7-4) and sample (15-8) after passing through 90 degree of phase shifter phase shift；
Lock-in amplifier output signal host computer is sent to by capture card, which is characterized in that the host computer be embedded in by
The measurement module of software realization, the measurement module include with lower unit:
Power detection unit: the deformation quantity for the conducting probe (7-4) that acquisition four-quadrant position detector (4) detects in real time, and root
The active force between conducting probe (7-4) and sample is calculated according to the deformation quantity；The active force is equal to deformation quantity and conducting probe
The product of (7-4) rigidity；
Surface topography and maximum depth of cup measuring unit: Kelvin is controlled by No.1 piezo controller and scans sample stage (15)
On piezoelectric ceramics rise, make sample close to conducting probe (7-4), the maximum effect between conducting probe (7-4) and sample
When power reaches setting value, record Kelvin scans the Z-direction coordinate value of piezoelectric ceramics on sample stage (15)；Maximum impression is recorded simultaneously
Depth, the maximum depth of cup are equal to piezoelectric ceramics (7-2) from equilbrium position point A ' to the displacement of point B and conducting probe (7-
4) difference of deformation quantity；It is B that active force between conducting probe (7-4) and sample, which reaches time point corresponding when setting value,
Point；The equilbrium position point A ' refers to after A point, and in conducting probe and sample contact process, the force feedback of conducting probe is believed
Number be equal to conducting probe and sample not in contact with when force feedback signal time point；
Adhesion strength measuring unit: piezoelectric ceramics (7-2) is controlled by No. three piezo controllers, moves conducting probe (7-4) reversely
It is dynamic, and active force suffered when conducting probe (7-4) and sample are detached from during reverse movement is recorded, the active force is to lead
Maximum adhesion power between electric probe (7-4) and sample；Corresponding time point is C point at this time；
Equivalent Young's modulus computing unit: the power between B point and C point-piezoelectric ceramics is displaced quantity converting to force-depth of cup
Data, and DMT models fitting is utilized, the equivalent Young's modulus of sample, the DMT model can be obtained are as follows:
Interaction force of the F between conducting probe (7-4) and sample, FadhFor the maximum between sample and conducting probe (7-4)
Adhesion strength, R are the needle type radius of conducting probe (7-4), and δ is depth of cup, E*For equivalent Young's modulus；
Surface local potential difference measurements unit: it is mobile by the piezoelectric ceramics on No. three piezo controller controls probe hand (7), make
Conducting probe (7-4) continues to move up certain altitude h, and h > 0 is maintained at conducting probe (7-4) at height h；It will lock
The phase of phase amplifier output adjusts DC voltage U as feedback signalDCValue, make lock-in amplifier export phase signal
Zero, UDCIt is the direct current compensation voltage that DC power supply is loaded between conducting probe and sample, records U at this timeDCValue, the UDC
Value be that surface local potential between sample and conducting probe is poor；
Sample mobile unit: next scanning element is moved to by No. two piezo controller drivings XYZ nanometer positioning platform (13)；
The Arbitrary Waveform Generator generates gaussian signal, controls conducting probe by the signal and moves back and forth up and down.
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| CN108802442B (en) * | 2018-05-30 | 2020-07-24 | 中国船舶重工集团公司第七二五研究所青岛分部 | Kelvin probe testing device and testing method thereof |
| CN109444487B (en) * | 2018-12-21 | 2024-03-29 | 义乌臻格科技有限公司 | Probe detection head with continuously adjustable probe spacing |
| CN109799369A (en) * | 2019-02-13 | 2019-05-24 | 南昌大学 | Atomic force microscope external equipment multi-parameter in-situ measurement system and measurement method |
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| CN110763873B (en) * | 2019-11-18 | 2021-04-13 | 中国科学院沈阳自动化研究所 | Peak force tapping and torsional resonance compounding method based on atomic force microscope technology |
| CN110907663B (en) * | 2019-12-18 | 2021-12-21 | 哈尔滨工业大学 | Kelvin probe force microscope measuring method based on T-shaped cantilever beam probe |
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| CN111654207A (en) * | 2020-05-28 | 2020-09-11 | 天津大学 | Displacement feedback device and method for piezoelectric ceramic micro-displacement drive control |
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