CN106637396A - Polycrystalline ingot furnace - Google Patents
Polycrystalline ingot furnace Download PDFInfo
- Publication number
- CN106637396A CN106637396A CN201611245551.XA CN201611245551A CN106637396A CN 106637396 A CN106637396 A CN 106637396A CN 201611245551 A CN201611245551 A CN 201611245551A CN 106637396 A CN106637396 A CN 106637396A
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- CN
- China
- Prior art keywords
- upper strata
- heat preservation
- strata bottom
- preservation strip
- warming plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
Abstract
The invention discloses a polycrystalline ingot furnace. The polycrystalline ingot furnace comprises an upper-layer bottom insulation board arranged on a furnace body and used for a semi-melting process, and an insulation strip detachably connected with the outer side, in the width direction, of the upper-layer bottom insulation board and used for a fine-melting process. According to the polycrystalline ingot furnace, a whole upper-layer bottom insulation board used in the semi-melting process and the fine-melting process of an existing polycrystalline ingot furnace is replaced with the upper-layer bottom insulation board only used in the semi-melting process, in the fine-melting process, the insulation strip is connected with the outer side, in the width direction, of the upper-layer bottom insulation board, thus, during conversion of the semi-melting process and the fine-melting process, the requirement can be met only by installing or detaching the insulation strip, the upper-layer bottom insulation board does not need to be detached or installed or transformed during process conversion, losses of thermal field materials are reduced, thermal field transformation of workers on the polycrystalline ingot furnace is improved, in the transformation process, no influence is caused to other parts of a complete set of thermal field, and the stability of the thermal field is guaranteed.
Description
Technical field
The present invention relates to polycrystalline silicon ingot casting technical field, more particularly to a kind of polycrystalline ingot furnace.
Background technology
With the continuous maturation of photovoltaic industry technology, the photoelectric efficiency fast lifting of photovoltaic cell, so that being manufactured into
This rapid decrease, crystal silicon solar energy battery is progressively in occupation of the leading position of photovoltaic industry.From current solaode city
Field environment sees that the conversion efficiency for improving solaode is the main flow direction of solaode industry.Although the conversion of monocrystal silicon
Efficiency far is more than polysilicon, but monocrystal silicon is relatively costly.Therefore, in order to improve the transformation efficiency of solaode, too
Yang Neng enterprises constantly make improvement to the casting method of polycrystalline cast ingot furnace system and polycrystal silicon ingot.
High-efficiency polycrystalline casting ingot process can be divided into fine melt method casting ingot process and semi-molten method ingot casting according to whether seed crystal is left
Technique.Fine melt technique be by being melted completely to the raw material in silica crucible, then the silicon melt to melting be oriented it is cold
But, and control to cool down direction, speed and degree of supercooling, make silicon melt start progressively to be cooled down to top from bottom, form polycrystalline silicon wafer
Body structure.Half process of smelting is to adopt to have seed crystal ingot casting growth method, and in the bottom of silica crucible evengranular many grain of crystallizations are placed with
Crystalline substance, is melted using technical controlling polycrystalline seed portion, by the adjustment of technological temperature, controls the smooth of bottom solid liquid interface, will
Polycrystalline seed crystal carries out part fusing, remaining certain height.Thus, lowered the temperature on the basis of polycrystalline seed crystal, crystal growth
Then with polycrystalline seed crystal as forming core point forming core, required nucleating work is greatly reduced, forming core amount is more and forming core is uniform, and big crystal grain is gulped down
The phenomenon for biting little crystal grain is reduced, for this purpose, growing the uniform polycrystalline product of crystal grain.
At present enterprise inside the circle is often according to the progress situation and industry of fine melt technique and fritting Technology to height
The needs of effect polysilicon chip, switch over to the casting ingot process in enterprise.Because the thermal field of half process of smelting and fine melt technique has
Different, is mainly reflected in fritting technique thermal field need to be mounted so that the reason for felt is protected in insulation, the width of its upper strata bottom warming plate
Width of the degree much smaller than the upper strata bottom warming plate of fine melt technique.Therefore, when switching over to the casting ingot process in enterprise, it is right to need
Thermal field carries out destructive whole piece upper strata bottom warming plate of removing and carries out thermal field transformation, not only wastes thermal field material, causes company great
Cost allowance, can also increase the workload of employee, cause associate's cost to improve.Meanwhile, change whole piece upper strata bottom warming plate
When, the splicing seams for often causing a whole set of thermal field change, and cause heat insulating ability to be greatly reduced, and cause the increase of energy consumption, enter one
Step increases company cost.
The content of the invention
It is an object of the invention to provide a kind of polycrystalline ingot furnace, the thermal field transformation in fine melt and half process of smelting is convenient, letter
It is single, other parts of thermal field will not be impacted.
To solve above-mentioned technical problem, a kind of polycrystalline ingot furnace is embodiments provided, including being arranged on body of heater
Upper strata bottom warming plate for half process of smelting and the use being detachably connected on the outside of width with upper strata bottom warming plate
In the heat preservation strip of fine melt technique.
Wherein, the width of the heat preservation strip is 30mm～50mm.
Wherein, the thickness of the heat preservation strip is identical with the thickness of upper strata bottom warming plate.
Wherein, upper strata bottom warming plate and/or the heat preservation strip are the hard felt of carbon fiber.
Wherein, upper strata bottom warming plate and the heat preservation strip are connected by built-in bolt nut fastener.
Wherein, the built-in bolt nut fastener is high purity graphite built-in bolt nut fastener.
Wherein, it is at least two to connect the heat preservation strip with the quantity of the screw of upper strata bottom warming plate, multiple described
Screw is symmetrical.
Wherein, the length of the bolt of the built-in bolt nut fastener is 60mm～80mm.
The polycrystalline ingot furnace that the embodiment of the present invention is provided, compared with prior art, with advantages below：
Polycrystalline ingot furnace provided in an embodiment of the present invention, is incubated including the upper strata bottom being arranged on body of heater for half process of smelting
Plate and the heat preservation strip for fine melt technique being detachably connected on the outside of width with upper strata bottom warming plate.
The polycrystalline ingot furnace, by by the monoblock in existing polycrystalline silicon ingot or purifying furnace in half process of smelting and fine melt technique
Upper strata bottom insulation guard board is replaced by the upper strata bottom warming plate only used in half process of smelting, in fine melt technique, by heat preservation strip
It is connected in the outside of width with upper strata bottom warming plate, so when half process of smelting and fine melt technique are changed, it is only necessary to install
Or dismounting heat preservation strip can reach requirement, upper strata bottom warming plate need not be carried out dismounting transformation in technique conversion, reduced
The loss of thermal field material, improves staff and the thermal field of polycrystalline silicon ingot or purifying furnace is transformed, and in transformation process, will not be right
Other parts of a whole set of thermal field are impacted, it is ensured that the stability of thermal field.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are the present invention
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can be with basis
These accompanying drawings obtain other accompanying drawings.
Fig. 1 be upper strata bottom warming plate in a kind of specific embodiment of polycrystalline ingot furnace provided in an embodiment of the present invention with
The annexation schematic diagram of heat preservation strip；
Fig. 2 is a kind of structural representation of specific embodiment of polycrystalline ingot furnace provided in an embodiment of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than the embodiment of whole.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 1～Fig. 2 is refer to, Fig. 1 is in a kind of specific embodiment of polycrystalline ingot furnace provided in an embodiment of the present invention
Upper strata bottom warming plate and heat preservation strip annexation schematic diagram；Fig. 2 is the one of polycrystalline ingot furnace provided in an embodiment of the present invention
Plant the structural representation of specific embodiment.
In a kind of specific embodiment, the polycrystalline ingot furnace is used for half process of smelting including being arranged on body of heater
Layer bottom warming plate 10 and with upper strata bottom warming plate 10 be detachably connected on the outside of width for fine melt technique
Heat preservation strip 20, by by the monoblock upper strata bottom insulation guard board in existing polycrystalline silicon ingot or purifying furnace in half process of smelting and fine melt technique
The upper strata bottom warming plate 10 being replaced by only used in half process of smelting, and in fine melt technique, by heat preservation strip 20 and upper strata bottom
Warming plate 10 connects in the outside of width, so when half process of smelting and fine melt technique are changed, it is only necessary to install or remove
Heat preservation strip 20 can reach requirement, and upper strata bottom warming plate 10 need not carry out dismounting transformation in technique conversion, reduce heat
The loss of field material, improves staff and the thermal field of polycrystalline silicon ingot or purifying furnace is transformed, and in transformation process, will not be to whole
Other parts of set thermal field are impacted, it is ensured that the stability of thermal field.
It is pointed out that heat preservation strip 20 is connected with the connected mode of upper strata bottom warming plate 10 in width, i.e.,
Connection heat preservation strip 20 is, in order to extend the width of upper strata bottom warming plate 10, to increase heat-insulating property, reaches the demand of fine melt technique.
Because the size for the polycrystalline silicon ingot or purifying furnace with different model, its upper strata bottom warming plate 10 and heat preservation strip 20 is not
With, therefore the size of upper strata bottom of the present invention warming plate 10 and heat preservation strip 20 is not specifically limited, but the two must be supporting
Use, i.e., for the polycrystalline silicon ingot or purifying furnace of same model, the length of upper strata bottom warming plate 10 and heat preservation strip 20 is fixed, but
It is that its width and thickness are not limited for different thermal field requirements.
In the present invention, it is that heat preservation strip 20 is connected by the width in upper strata bottom warming plate 10, reaches increase width
Effect, so as to reach the thermal field demand of fine melt technique.
The width of the heat preservation strip 20 is generally 30mm～50mm.
It is pointed out that the present invention is not specifically limited to the width of the heat preservation strip 20, and heat preservation strip 20 with it is upper
The connected mode of layer bottom warming plate 10 be in width,
Identical with the thermal field in existing fine melt technique to ensure, the thickness of the heat preservation strip 20 is incubated with the upper strata bottom
The thickness of plate 10 is identical.
Ensureing the heat preservation strip 20 of upper strata bottom warming plate 10 or described with preferable wearability, raising service life is described
Upper strata bottom warming plate 10 and/or the heat preservation strip 20 are the hard felt of carbon fiber.
It is that guarantee carrys out inner structure simply because upper strata bottom warming plate 10 and heat preservation strip 20 are detachably connected, heat preservation strip
20 convenient disassembly, while avoid coming off in use causing potential safety hazard, improves the safety for using, a kind of concrete
In embodiment, upper strata bottom warming plate 10 and the heat preservation strip 20 are connected by built-in bolt nut fastener.
Due to built-in bolt nut fastener be it is synchronous with the installation and removal of heat preservation strip 20 use, using more frequently
It is numerous, it is the service life for ensureing built-in bolt nut fastener, the built-in bolt nut fastener is in high purity graphite
Put formula bolt and nut securing member.
It is pointed out that not doing specifically to the dimensional parameters and material of built-in bolt and nut securing member in the present invention
Limit.
To ensure the connection reliability that is connected with upper strata bottom warming plate 10 of heat preservation strip 20 so that the two upon connection with
The heat insulation effect of the fine melt technique upper strata bottom warming plate 10 of existing integral type is close to, and the heat preservation strip 20 is protected with the upper strata bottom
The quantity of the screw of warm plate 10 is at least two, and multiple screws are symmetrical.
In the present invention, because built-in bolt nut fastener is incubated with the upper strata bottom for fixing heat preservation strip 20
Plate 10, therefore general parameterss or model should be with heat preservation strip 20 and the model Parameters variations of upper strata bottom warming plate 10.
The present invention is not limited built-in bolt and nut securing member in heat preservation strip 20 with the particular location of upper strata bottom warming plate 10,
The depth of the screw into upper strata bottom warming plate 10 is not specifically limited, the built-in spiral shell described in a kind of specific embodiment
The length of the bolt of bolt nut fastener is 60mm～80mm.
In sum, polycrystalline ingot furnace provided in an embodiment of the present invention, by changing existing upper strata bottom insulation guard board, will
Its effect is only limited to the size in half process of smelting, need change thermal field be changed into fine melt technique when, by heat preservation strip with it is upper
Layer bottom warming plate width outside connection obtain fine melt technique thermal field, so polycrystalline silicon ingot or purifying furnace thermal field complete
It is molten when changing and fritting between, as long as being dismantled to heat preservation strip or being installed, again during, upper strata bottom warming plate is in work
Need not carry out dismounting transformation in skill conversion, this reduces the loss of thermal field material, improve staff to polysilicon
The thermal field transformation of ingot furnace, and in transformation process, other parts of a whole set of thermal field will not be impacted, it is ensured that thermal field
Stability.
Polycrystalline ingot furnace provided by the present invention is described in detail above.Specific case used herein is to this
The principle and embodiment of invention is set forth, the explanation of above example be only intended to help understand the method for the present invention and
Its core concept.It should be pointed out that for those skilled in the art, in the premise without departing from the principle of the invention
Under, some improvement and modification can also be carried out to the present invention, these are improved and modification also falls into the protection of the claims in the present invention
In the range of.
Claims (8)
1. a kind of polycrystalline ingot furnace, it is characterised in that including be arranged on body of heater the upper strata bottom warming plate that is used for half process of smelting and
The heat preservation strip for fine melt technique being detachably connected on the outside of width with upper strata bottom warming plate.
2. polycrystalline ingot furnace as claimed in claim 1, it is characterised in that the width of the heat preservation strip is 30mm～50mm.
3. graphite protective plate structure as claimed in claim 2, it is characterised in that the thickness of the heat preservation strip is protected with the upper strata bottom
The thickness of warm plate is identical.
4. graphite protective plate structure as claimed in claim 3, it is characterised in that upper strata bottom warming plate and/or the insulation
Bar is the hard felt of carbon fiber.
5. graphite protective plate structure as claimed in claim 4, it is characterised in that upper strata bottom warming plate and the heat preservation strip are logical
Cross the connection of built-in bolt nut fastener.
6. graphite protective plate structure as claimed in claim 5, it is characterised in that the built-in bolt nut fastener is high-purity
Graphite built-in bolt nut fastener.
7. graphite protective plate structure as claimed in claim 6, it is characterised in that the connection heat preservation strip is incubated with the upper strata bottom
The quantity of the screw of plate is at least two, and multiple screws are symmetrical.
8. graphite protective plate structure as claimed in claim 7, it is characterised in that the bolt of the built-in bolt nut fastener
Length be 60mm～80mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245551.XA CN106637396A (en) | 2016-12-29 | 2016-12-29 | Polycrystalline ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245551.XA CN106637396A (en) | 2016-12-29 | 2016-12-29 | Polycrystalline ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106637396A true CN106637396A (en) | 2017-05-10 |
Family
ID=58835715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611245551.XA Pending CN106637396A (en) | 2016-12-29 | 2016-12-29 | Polycrystalline ingot furnace |
Country Status (1)
| Country | Link |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202208779U (en) * | 2011-07-27 | 2012-05-02 | 江苏协鑫硅材料科技发展有限公司 | Ingot furnace |
| US20130095027A1 (en) * | 2011-10-14 | 2013-04-18 | Sino-American Silicon Products Inc. | Crystalline silicon ingot and method of fabricating the same |
| CN205275786U (en) * | 2015-12-14 | 2016-06-01 | 无锡荣能半导体材料有限公司 | Ingot furnace thermal field heat preservation |
| CN105839180A (en) * | 2016-06-20 | 2016-08-10 | 晶科能源有限公司 | Polycrystal ingot furnace |
-
2016
- 2016-12-29 CN CN201611245551.XA patent/CN106637396A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202208779U (en) * | 2011-07-27 | 2012-05-02 | 江苏协鑫硅材料科技发展有限公司 | Ingot furnace |
| US20130095027A1 (en) * | 2011-10-14 | 2013-04-18 | Sino-American Silicon Products Inc. | Crystalline silicon ingot and method of fabricating the same |
| CN205275786U (en) * | 2015-12-14 | 2016-06-01 | 无锡荣能半导体材料有限公司 | Ingot furnace thermal field heat preservation |
| CN105839180A (en) * | 2016-06-20 | 2016-08-10 | 晶科能源有限公司 | Polycrystal ingot furnace |
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Application publication date: 20170510 |