CN106629839A - Anatase crystal titanium dioxide photocatalysis film, atomic layer deposition preparation method and application - Google Patents
Anatase crystal titanium dioxide photocatalysis film, atomic layer deposition preparation method and application Download PDFInfo
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- CN106629839A CN106629839A CN201610989315.2A CN201610989315A CN106629839A CN 106629839 A CN106629839 A CN 106629839A CN 201610989315 A CN201610989315 A CN 201610989315A CN 106629839 A CN106629839 A CN 106629839A
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- titanium tetrachloride
- film
- purity nitrogen
- pulse
- cleaning
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 239000013078 crystal Substances 0.000 title claims abstract description 18
- 238000000231 atomic layer deposition Methods 0.000 title claims description 7
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 238000007146 photocatalysis Methods 0.000 title abstract description 8
- 230000001699 photocatalysis Effects 0.000 title abstract description 6
- 239000004408 titanium dioxide Substances 0.000 title abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 48
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims abstract description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000004140 cleaning Methods 0.000 claims abstract description 18
- 239000012159 carrier gas Substances 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000005406 washing Methods 0.000 claims abstract description 7
- 238000005137 deposition process Methods 0.000 claims abstract description 5
- 238000007740 vapor deposition Methods 0.000 claims abstract description 5
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 239000012498 ultrapure water Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 16
- 238000011010 flushing procedure Methods 0.000 claims description 11
- 230000004907 flux Effects 0.000 claims description 10
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 8
- 230000003197 catalytic effect Effects 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000002243 precursor Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
- C01G23/047—Titanium dioxide
- C01G23/053—Producing by wet processes, e.g. hydrolysing titanium salts
- C01G23/0536—Producing by wet processes, e.g. hydrolysing titanium salts by hydrolysing chloride-containing salts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
- B01J21/06—Silicon, titanium, zirconium or hafnium; Oxides or hydroxides thereof
- B01J21/063—Titanium; Oxides or hydroxides thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
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- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
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- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
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- C03C2217/212—TiO2
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- C03C2217/00—Coatings on glass
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- C03C2217/71—Photocatalytic coatings
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- C03C2218/00—Methods for coating glass
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- C03C2218/15—Deposition methods from the vapour phase
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Abstract
The invention relates to an anatase crystal titanium dioxide photocatalysis film and a preparation method. Titanium tetrachloride and high-purity water serve as a precursor source, high-purity nitrogen serves as carrier gas, and the thickness of the film is controlled by repeating titanium tetrachloride and water vapor deposition combination. The titanium tetrachloride and water vapor deposition combination includes titanium tetrachloride pulsating, high-purity nitrogen washing, titanium tetrachloride pulsating, high-purity nitrogen cleaning, water vapor pulsating and high-purity nitrogen cleaning. In titanium tetrachloride deposition, carrier gas flow is 150sccm, pulse duration is 0.2s, and washing time is 2s. In water vapor deposition, carrier gas flow in is 200sccm, pulse duration is 0.3s, and washing time is 3s. In the deposition process, a low vacuum environment is 6-10hPa, and deposition temperature ranges from 200 DEG C to 350 DEG C. The TiO2 film prepared on ITO and FTO conducting glass and silicon (100) substrates is of a single anatase structure and has a good photocatalysis performance.
Description
Technical field
The invention belongs to TiO2Conductor photocatalysis thin film materials art, and in particular to using technique for atomic layer deposition system
Standby monocrystalline phase anatase structure Ti O2The preparation method of optoelectronic film and application.
Background technology
Used as broad stopband high-k semi-conducting material, TiO2 has the broad stopband width more than 3eV, and with former material
Material is abundant, the characteristics of safety non-toxic so as to receiving significant attention in the fields such as semiconductor devices, display.Compare Buddha's warrior attendant
Stone and brockite, anatase structured TiO2There is higher efficiency and performance in photocatalysis field.Liu L. etc. are in experiment
In TiO to three kinds of structures2Compare, it was demonstrated that the best performance of anatase structured TiO2（ACS Catal. 2012,
2, 1817−1828 ）；The mechanism by setting up its behind of model explanation such as subsequent T. Luttrell（Sci. Rep.
2014, 4, 4043）；But high-quality anatase crystal TiO2The preparation of film, is still so far larger challenge.
The preparation methods such as conventional hydro-thermal, magnetic control, the TiO for preparing2Existing defects are more and belong to various crystal formations mixing
Product, more defect is reduced using high annealing, but TiO can be caused2It is converted into the structure of rutile.Atom layer deposition process,
It is the high-quality thin film preparation technology for being obtained in that atomic level precise thickness, and it is thin to grow high-quality oxide
Film.Correlation theory research confirms：TiO is prepared using ALD methods2During film, the chemistry meter at the interface, growth temperature and source of substrate
Amount than etc. factor film crystal formation and quality had significantly affect：D. H. Kim et al. utilize the technology in YSZ（Yttrium Stable Oxygen
Change zirconium）On be prepared for the crystal formation of brockite;Kim, K. Vasu et al. is using technique for atomic layer deposition through specially treated
Sapphire substrates on grown the TiO of anatase2Film.But how to regulate and control growth course, control the stoichiometry of correlation
So as to obtain high-quality anatase crystal TiO on different substrates2Film still lacks further research.
The content of the invention
To overcome the deficiencies in the prior art, the invention provides a kind of anatase crystal TiO2Photocatalysis film and atomic layer
Deposition preparation and application.Using simple carbon tetrachloride（TiCl4）For titanium source, high purity water is O sources, by controlling reaction stream
Journey, obtains on different substrates the TiO of the single anatase crystal of high-quality2Film.The TiO prepared using the program2Film,
Photocatalysis performance is significantly improved, and preparation parameter is easily controllable, repeatable high, with obvious using value.
The present invention takes technical scheme below to realize：
A kind of method that ald prepares anatase crystal optically catalytic TiO 2 film, it is characterised in that including following
Step：
（1）With titanium tetrachloride and high purity water as forerunner source, will heat in atomic layer deposition system through the substrate of unified cleaning
To certain temperature range, under low vacuum environment, with High Purity Nitrogen as current-carrying gas, by repeating titanium tetrachloride and vapor deposition
The control to film thickness is realized in combination；
（2）The Sedimentary Assemblages of above-mentioned titanium tetrachloride and vapor are 2 titanium tetrachloride pulses and 1 vapor pulse, and it is deposited
It is combined as titanium tetrachloride pulse/High Purity Nitrogen flushing/titanium tetrachloride pulse/High Purity Nitrogen cleaning/vapor pulse/High Purity Nitrogen cleaning；
（3）Carrier gas flux when titanium tetrachloride is deposited is 150sccm, and the pulse duration is 0.2s, and washing time is 2s；Water steams
It is 0.3s in the 200sccm pulse durations that carrier gas flux when gas is deposited is;Washing time is 3s；
（4）Low vacuum environment is 6-10hPa in deposition process, and deposition temperature range is 200-350 DEG C.
The flow process of substrate unification cleaning is the basic cleaning process of industry, with isopropanol, deionized water in ultrasonic cleaner
In successively ultrasound after rinse, after dried up with nitrogen gun.
A kind of anatase crystal optically catalytic TiO 2 film, it is characterised in that prepared according to method described above.
A kind of anatase crystal optically catalytic TiO 2 film is in light-catalysed application.
Substrate used is FTO, ITO electro-conductive glass substrate and single-sided polishing Si (100) substrate in this programme, and unification is cleaned
Flow process be the basic cleaning process of industry, rinsed after ultrasound successively in ultrasonic cleaner with isopropanol, deionized water, use afterwards
Nitrogen gun is dried up.
With prior art, the invention has the beneficial effects as follows：
In the present invention adopt atom layer deposition process, by control course of reaction in correlation combiner mode and technological parameter,
ITO and FTO electro-conductive glass and silicon（100）High-quality anatase crystal TiO is obtained in substrate2Photocatalysis film；The preparation side
Without the need for doing specially treated to substrate in case, process is simple is easily-controllable, repeatable strong, it is easy to accomplish large-scale mass production, has
Important application potential.
Description of the drawings
Fig. 1：The XRD of case study on implementation sample 1；
Fig. 2：The Raman spectrogram of case study on implementation sample 1.
Specific embodiment
Embodiments of the invention are elaborated below, the present embodiment is carried out under premised on technical solution of the present invention
Implement, give detailed embodiment and specific operating process, but protection scope of the present invention is not limited to following enforcements
Example.
Embodiment 1：
The FTO electro-conductive glass substrates that unification was cleaned are put in ald chamber, extracting vacuum to 6-10hPa;, by substrate
TiO is opened after being heated to 200 DEG C2Deposition cycle is combined, and repeats titanium tetrachloride pulse/High Purity Nitrogen flushing/titanium tetrachloride pulse/height
Purity nitrogen cleaning/vapor pulse/High Purity Nitrogen cleaning=（0.2s/2s/0.2s/2s/0.3s/3s）Combination 400 times, four in the combination
The carrier gas flux and flushing flow rate of titanium chloride is 150sccm;The carrier gas flux and flushing flow rate of vapor is 200sccm；Circulation
Sample is taken out after end, academic title's thickness is the anatase TiO of 20nm2Film.
Embodiment 2：
The ITO substrate that unification was cleaned is put in ald chamber, extracting vacuum to 6-10hPa;, substrate is heated to
TiO is opened after 250 DEG C2Deposition cycle is combined, and repeats titanium tetrachloride pulse/High Purity Nitrogen flushing/titanium tetrachloride pulse/High Purity Nitrogen clear
Wash/vapor pulse/High Purity Nitrogen cleaning=（0.2s/2s/0.2s/2s/0.3s/3s）Combination 600 times, titanium tetrachloride in the combination
Carrier gas flux and flushing flow rate be 150sccm;The carrier gas flux and flushing flow rate of vapor is 200sccm；After circulation terminates
Sample is taken out, academic title's thickness is the anatase TiO of 30nm2Film.
Embodiment 3：
Si (100) silicon base that unification was cleaned is put in ald chamber, extracting vacuum to 6-10hPa;, by substrate
TiO is opened after being heated to 300 DEG C2Deposition cycle is combined, and repeats titanium tetrachloride pulse/High Purity Nitrogen flushing/titanium tetrachloride pulse/height
Purity nitrogen cleaning/vapor pulse/High Purity Nitrogen cleaning=（0.2s/2s/0.2s/2s/0.3s/3s）Combination 800 times, four in the combination
The carrier gas flux and flushing flow rate of titanium chloride is 150sccm;The carrier gas flux and flushing flow rate of vapor is 200sccm；Circulation
Sample is taken out after end, academic title's thickness is the anatase TiO of 40nm2Film.
Case study on implementation sample has carried out dependence test, and accompanying drawing 1 gives the xrd spectrograms of the sample of case study on implementation 1, and Fig. 2 is given
The visible absorption spectrogram of the sample of case study on implementation 1.
Claims (4)
1. a kind of method that ald prepares anatase crystal optically catalytic TiO 2 film, it is characterised in that include with
Lower step：
（1）With titanium tetrachloride and high purity water as forerunner source, will heat in atomic layer deposition system through the substrate of unified cleaning
To certain temperature range, under low vacuum environment, with High Purity Nitrogen as current-carrying gas, by repeating titanium tetrachloride and vapor deposition
The control to film thickness is realized in combination；
（2）The Sedimentary Assemblages of above-mentioned titanium tetrachloride and vapor are 2 titanium tetrachloride pulses and 1 vapor pulse, and it is deposited
It is combined as titanium tetrachloride pulse/High Purity Nitrogen flushing/titanium tetrachloride pulse/High Purity Nitrogen cleaning/vapor pulse/High Purity Nitrogen cleaning；
（3）Carrier gas flux when titanium tetrachloride is deposited is 150sccm, and the pulse duration is 0.2s, and washing time is 2s；Water steams
It is 0.3s in the 200sccm pulse durations that carrier gas flux when gas is deposited is;Washing time is 3s；
（4）Low vacuum environment is 6-10hPa in deposition process, and deposition temperature range is 200-350 DEG C.
2. according to claim 1 ald prepares the side of high-quality anatase crystal optically catalytic TiO 2 film
Method, it is characterised in that the flow process of substrate unification cleaning is the basic cleaning process of industry, with isopropanol, deionized water in ultrasonic wave
In washer successively ultrasound after rinse, after dried up with nitrogen gun.
3. a kind of anatase crystal optically catalytic TiO 2 film, it is characterised in that method system according to claim 1 or claim 2
It is standby to obtain.
4. according to claim 3 anatase crystal optically catalytic TiO 2 film in light-catalysed application.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108950518A (en) * | 2018-07-07 | 2018-12-07 | 云南师范大学 | A kind of sub- thin film of titanium oxide preparation method based on technique for atomic layer deposition |
| CN109395747A (en) * | 2018-11-15 | 2019-03-01 | 上海纳米技术及应用国家工程研究中心有限公司 | Flower-shape Ni-doped molybdenum disulfide/photocatalysis material of titanium dioxide preparation method and application |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108950518A (en) * | 2018-07-07 | 2018-12-07 | 云南师范大学 | A kind of sub- thin film of titanium oxide preparation method based on technique for atomic layer deposition |
| CN109437290A (en) * | 2018-10-09 | 2019-03-08 | 深圳大学 | A kind of preparation method and lithium ion super capacitor of a lithium titanate nanobelt ball of string |
| CN109437290B (en) * | 2018-10-09 | 2021-03-23 | 深圳大学 | Preparation method of lithium titanate nanoribbon coil and lithium ion supercapacitor |
| CN109395747A (en) * | 2018-11-15 | 2019-03-01 | 上海纳米技术及应用国家工程研究中心有限公司 | Flower-shape Ni-doped molybdenum disulfide/photocatalysis material of titanium dioxide preparation method and application |
| CN109395747B (en) * | 2018-11-15 | 2021-07-20 | 上海纳米技术及应用国家工程研究中心有限公司 | Preparation method and application of flower-shaped Ni-doped molybdenum disulfide/titanium dioxide photocatalytic material |
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