CN106629737B - The electrode assembly of polycrystalline silicon reducing furnace - Google Patents
The electrode assembly of polycrystalline silicon reducing furnace Download PDFInfo
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- CN106629737B CN106629737B CN201610701645.7A CN201610701645A CN106629737B CN 106629737 B CN106629737 B CN 106629737B CN 201610701645 A CN201610701645 A CN 201610701645A CN 106629737 B CN106629737 B CN 106629737B
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- conductive arm
- mounting portion
- silicon core
- support base
- graphite
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
A kind of electrode assembly of polycrystalline silicon reducing furnace, including graphite support base, graphite support base includes the first conductive arm and the second conductive arm, and the first mounting portion of installation silicon core is provided on the first conductive arm, the second mounting portion of installation silicon core is provided on the second conductive arm.Polycrystalline silicon reducing furnace electrode assembly of the invention, the density of silicon core is doubled, and when reduction reaction occurs for reduction furnace, heat, material utilization are improved, and cost reduces.
Description
Technical field
The present invention relates to a kind of electrode assembly more particularly to a kind of electrode assemblies of polycrystalline silicon reducing furnace.
Background technique
In polysilicon production process, electrode passes through chassis of reducing furnace in reduction furnace, and silicon core is passed through graphite external member and insulation
Ceramic ring external member is fixed on the electrode, is silicon core turn-on current by electrode, heats silicon core, so that reaching generation restores chemical gas
Mutually deposition required temperature.Wherein graphite external member primarily serves fixed silicon core, support silicon rod and the work with silicon core contact conducting electric current
With insulating ceramics ring primarily serves isolation electrode and chassis of reducing furnace, insulation protection, the effect for avoiding electric discharge phenomena from occurring.
Multiple electrodes are provided with by electrode assembly on general chassis of reducing furnace, correspondingly, each electrode is provided with one
Graphite clamping petal and cutting ferrule form one-to-one setting relationship, are restoring in this way for gripping on it a silicon core
Can there are multiple electrodes and silicon core in furnace, reduction furnace can be with the multiple silicon rods of a secondary growth, however, the production of such reduction furnace is imitated
Rate is insufficient, higher cost.
Summary of the invention
The technical problem to be solved by the present invention is providing a kind of electrode assembly of lower reduction furnace of production cost.
A kind of electrode assembly of polycrystalline silicon reducing furnace, including graphite support base, graphite support base include first conductive
Arm and the second conductive arm are provided with the first mounting portion of installation silicon core on the first conductive arm, are provided with installation on the second conductive arm
Second mounting portion of silicon core.
Polycrystalline silicon reducing furnace electrode assembly of the invention, the density of silicon core is doubled, and it is anti-that reduction occurs in reduction furnace
When answering, heat, material utilization are improved, and cost reduces.
Detailed description of the invention
Fig. 1 is the schematic diagram of the electrode assembly of one polycrystalline silicon reducing furnace of embodiment of the present invention.
Fig. 2 is the cross-sectional view of the graphite support base of the electrode assembly of polycrystalline silicon reducing furnace shown in FIG. 1.
Fig. 3 is the top view of graphite support base shown in Fig. 2.
Fig. 4 is the top view of the graphite support base of embodiment of the present invention two.
Fig. 5 is the top view of the graphite support base of embodiment of the present invention three.
Fig. 6 is the cross-sectional view of the graphite support base of embodiment of the present invention four.
Fig. 7 is the cross-sectional view of the graphite support base of embodiment of the present invention five.
Fig. 8 is the top view of the graphite support base of embodiment of the present invention six.
Fig. 9 is the top view of the graphite support base of embodiment of the present invention seven.
Specific embodiment
The electrode assembly of polycrystalline silicon reducing furnace of the invention is described in detail below with reference to diagram.
Referring to Figure 1, (figure is not for installing silicon core for the electrode assembly of the polycrystalline silicon reducing furnace of embodiment of the present invention one
Show), electrode 12 is fixed on chassis of reducing furnace 10 by ceramic insulation ring 14, the electrode assembly installation of polycrystalline silicon reducing furnace
In 12 one end of electrode.
Please referring also to Fig. 2 and Fig. 3, the electrode assembly of polycrystalline silicon reducing furnace include graphite support base 21, are arranged in stone
Graphite clamping petal 23 in black support base 21 and the graphite ferrule 25 being arranged in outside graphite clamping petal 23.Wherein, graphite clamping petal 23
For clamping silicon core, graphite ferrule 25 clamps silicon core rear enclosure outside graphite clamping petal 23 in graphite clamping petal 23, keeps graphite clamping petal
23 being capable of stable holding silicon core.
In embodiment 1,21 bottom of graphite support base is provided with card slot 211, and card slot 211 with electrode 12 for matching
It closes and fixes.Graphite support base 21 includes the first conductive arm 213 and the second conductive arm 215, and the first conductive arm 213 and second is conductive
Arm 215 is symmetrical relative to card slot 211.First conductive arm 213 is provided with the first mounting portion relative to the distal end of card slot 211
2131, similarly, the second conductive arm 215 is provided with the second mounting portion 2151 relative to the distal end of card slot 211.First installation
Portion 2131 and the second mounting portion 2151 are provided with mounting groove above, can be on the first mounting portion 2131 and the second mounting portion 2151
A graphite clamping petal 23 and graphite ferrule 25 is respectively set, for installing a silicon core respectively.
The structure of the graphite support base 21 of this case embodiment one, including the first conductive arm 213 and the second conductive arm
215, the density of silicon core is doubled, when reduction reaction occurs for reduction furnace, heat, material utilization are improved, cost
It reduces.Meanwhile the structure of embodiment of the present invention one, to 21 Curve guide impeller of graphite support base, but do not change existing go back
Former 10 structure of furnace hearth plate, due to the higher cost of 10 scrap build of chassis of reducing furnace and complex, in scrap build
It is more convenient, and scrap build is at low cost.
Fig. 4 is referred to, embodiment of the present invention two is similar to embodiment one, but the graphite support base of embodiment two
21 other than including the first conductive arm 213 and the second conductive arm 215, further includes third conductive arm 217.First conductive arm 213,
Second conductive arm 215 is identical with 217 structure of third conductive arm, and three is uniformly distributed, and both adjacent angle is 120 degree.So
It can be further added by a conductive arm, further increase the density of silicon core.
Fig. 5 is referred to, embodiment of the present invention three is similar with embodiment one, but the graphite support base of embodiment three
21 other than including the first conductive arm 213, the second conductive arm 215, third conductive arm 217, further includes the 4th conductive arm 219.
Four conductive arms are at cross distribution, two-by-two symmetrically.
It is appreciated that the conductive arm quantity of above embodiment can also be continued growing according to actual needs.
Fig. 6 is referred to, embodiment of the present invention four is similar with embodiment one, including the first conductive arm 213 and second is led
Electric arm 215.But in addition to being also provided in middle position other than end is provided with the first mounting portion 2131 on the first conductive arm 213
First additional mounting portion 2132；Also structure having the same, 215 end of the second conductive arm are provided with second to second conductive arm 215
Mounting portion 2151, middle position are provided with the second additional mounting portion 2152.It can increase in this way in the case where not increasing conductive arm
The quantity for adding silicon core achievees the effect that improve silicon core density.
Fig. 7 is referred to, embodiment of the present invention five is similar with embodiment one, but the first conductive arm of embodiment five
213 and second conductive arm 215 be unsymmetric structure, specifically, 213 to the second conductive arm 215 of the first conductive arm is high.It uses
When, higher first conductive arm 213 is located at outer ring, and the second conductive arm 215 is located at inner ring, so that vertical silicon core and crossbeam silicon core
Total length is identical.
Fig. 8 is referred to, embodiment of the present invention six is similar with embodiment one, but the first conductive arm 213 and second is conductive
Arm 215 is rotatably connected using mechanical mechanisms such as pin shaft, hinges, so that between the first conductive arm 213 and the second conductive arm 215
Angle, φ is adjustable, and the angle Φ is 0 between 180 degree.It can according to need adjustment angle size.It can keep needing on adjacent two electrode
The equal length and vertical silicon core for wanting silicon core crossbeam to connect are identical as the total length of crossbeam silicon core.
Fig. 9 is referred to, embodiment of the present invention seven is similar with embodiment one, unlike, in graphite support base 21
There is cutting portion 216,218, the setting of cutting portion 216,218 reduces the use of graphite material, but does not influence conductive and use effect
Fruit is further reduced cost.
It is appreciated that the technical solution of above embodiment four, five, six, seven, it can also be with embodiment one, two, three
Scheme is applied in combination in the case where non-contravention, can achieve better effect.
In conclusion the above is merely preferred embodiments of the present invention, should not be limited the scope of the invention with this.It is i.e. all
It is that should still belong to the invention patent according to simple equivalent changes and modifications made by claims of the present invention and description
In the range of covering.
Claims (1)
1. a kind of electrode assembly of polycrystalline silicon reducing furnace, including graphite support base, it is characterised in that: graphite support base includes
First conductive arm and the second conductive arm are provided with the first mounting portion of installation silicon core on the first conductive arm, set on the second conductive arm
It is equipped with the second mounting portion of installation silicon core；
It is additionally provided with the first additional mounting portion on first conductive arm, is provided with the second additional mounting portion on the second conductive arm；
Graphite support base is provided with cutting portion；And
First mounting portion and graphite clamping petal and graphite ferrule on the second mounting portion, the first conductive arm and the second conductive arm are set
For unsymmetric structure, the first conductive arm is higher than the second conductive arm, in use, higher first conductive arm is located at outer ring, second is led
Electric arm is located at inner ring, so that vertical silicon core is identical as the total length of crossbeam silicon core,
First conductive arm and the second conductive arm are rotatably connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610701645.7A CN106629737B (en) | 2016-08-23 | 2016-08-23 | The electrode assembly of polycrystalline silicon reducing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610701645.7A CN106629737B (en) | 2016-08-23 | 2016-08-23 | The electrode assembly of polycrystalline silicon reducing furnace |
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| Publication Number | Publication Date |
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| CN106629737A CN106629737A (en) | 2017-05-10 |
| CN106629737B true CN106629737B (en) | 2019-07-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610701645.7A Active CN106629737B (en) | 2016-08-23 | 2016-08-23 | The electrode assembly of polycrystalline silicon reducing furnace |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110182813B (en) * | 2019-06-12 | 2021-01-12 | 厦门佰事兴新材料科技有限公司 | Method for maintaining electrode of reduction furnace |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101538042A (en) * | 2008-03-21 | 2009-09-23 | 三菱麻铁里亚尔株式会社 | Polycrystalline silicon reactor |
| JP2010090000A (en) * | 2008-10-08 | 2010-04-22 | Mitsubishi Materials Corp | Apparatus for producing polycrystalline silicon |
| CN103145130A (en) * | 2011-12-07 | 2013-06-12 | 刘雅铭 | Method and apparatus for increasing silicon core number in polycrystalline silicon reduction furnace |
| CN103449441A (en) * | 2013-08-26 | 2013-12-18 | 内蒙古盾安光伏科技有限公司 | Graphite electrode |
| CN206051572U (en) * | 2016-08-23 | 2017-03-29 | 内蒙古盾安光伏科技有限公司 | The electrode assemblie of polycrystalline silicon reducing furnace |
-
2016
- 2016-08-23 CN CN201610701645.7A patent/CN106629737B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101538042A (en) * | 2008-03-21 | 2009-09-23 | 三菱麻铁里亚尔株式会社 | Polycrystalline silicon reactor |
| JP2010090000A (en) * | 2008-10-08 | 2010-04-22 | Mitsubishi Materials Corp | Apparatus for producing polycrystalline silicon |
| CN103145130A (en) * | 2011-12-07 | 2013-06-12 | 刘雅铭 | Method and apparatus for increasing silicon core number in polycrystalline silicon reduction furnace |
| CN103449441A (en) * | 2013-08-26 | 2013-12-18 | 内蒙古盾安光伏科技有限公司 | Graphite electrode |
| CN206051572U (en) * | 2016-08-23 | 2017-03-29 | 内蒙古盾安光伏科技有限公司 | The electrode assemblie of polycrystalline silicon reducing furnace |
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| CN106629737A (en) | 2017-05-10 |
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Effective date of registration: 20201113 Address after: 015500 southeast of the intersection of jingsan road and Weisi Road, Qingshan Industrial Park, wulatehouqi, Bayannur City, Inner Mongolia Autonomous Region Patentee after: Bayannur concentrated Silicon Industry Co., Ltd Address before: 015543 the Inner Mongolia Autonomous Region Bayannaoer wulatehouqi Qingshan Industrial Park Patentee before: INNER MONGOLIA DUN'AN PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. |
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