CN106625201B - Chemical mechanical polishing apparatus - Google Patents
Chemical mechanical polishing apparatus Download PDFInfo
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- CN106625201B CN106625201B CN201511021045.8A CN201511021045A CN106625201B CN 106625201 B CN106625201 B CN 106625201B CN 201511021045 A CN201511021045 A CN 201511021045A CN 106625201 B CN106625201 B CN 106625201B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention relates to a kind of chemical mechanical polishing apparatus, the thickness for the wafer polishing layer that do not distort can be accurately obtained by the offset characteristic of thickness transducer, above-mentioned chemical mechanical polishing apparatus includes: polishing plate, and upper surface polished pad covers, and carries out rotation；Rubbing head is in contact with the plate surface of above-mentioned chip in chemical-mechanical polishing process to pressurize；Thickness transducer, Xiang Shangshu chip applies signal, to obtain the thickness information of above-mentioned chip；Control unit, in the state that above-mentioned chip is not located at the bottom plate of above-mentioned diaphragm, after the first output signal of the reception from above-mentioned thickness transducer, during carrying out chemical-mechanical polishing process in the state of making above-mentioned chip be located at the bottom plate of above-mentioned diaphragm, the second output signal is received from above-mentioned thickness transducer, to subtract the signal of above-mentioned first output signal from above-mentioned second output signal to obtain the thickness distribution of above-mentioned chip.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing apparatus, in more detail, are related to one kind in chemical-mechanical polishing process
The deviation for the eddy current sensor being measured to the thickness of wafer polishing layer is compensated, so as to more accurately obtain crystalline substance
The chemical mechanical polishing apparatus of the thickness of piece polishing layer.
Background technique
Under normal circumstances, (Chemical Mechanical Polishing is chemically-mechanicapolish polished；CMP) process refer to
The state that the substrates such as chip are contacted on the polishing plate rotated is rotated, and executes mechanical polishing to make the table of substrate
Face becomes flat, the process to reach preassigned thickness.
For this purpose, as shown in Figure 1, chemical mechanical polishing apparatus 1 is on one side so that the top of the covering polishing plate 10 of polishing pad 11
State carry out rotation, to the surface-pressure wafer W of polishing pad 11 and rotated using rubbing head 20 on one side, thus to chip
The surface of W is flatly polished.For this purpose, having adjuster 30, tie up the surface of polishing pad 11 by defined state
The mode held carries out rotation 30r, and implements to be modified, and is supplied to the surface of polishing pad 11 for executing by slurry supply pipe 40
The slurry of chemical polishing.
At the same time, the thickness transducer 50 of the polishing layer thickness for measuring wafer W is provided in polishing pad 11, with
Polishing pad 11 is rotated together, and the downside from one side Jing Guo wafer W, and received receive measures wafer W on one side in signal
Polishing layer thickness.According to different situations, it is provided on the downside of wafer W for penetrating through polishing pad 11 and polishing the saturating of plate 10
Bright window, and the output signal comprising polishing layer thickness information from wafer W is received in the lower part of transparency window, to measure wafer W
Polishing layer thickness.
Here, whether the thickness that measurement polishing layer thickness includes only monitoring polishing layer reaches target thickness.
The polishing layer of wafer W by metal materials such as tungsten as conductive material in the case where being formed, thickness transducer 50
With the sensor coil for being configured at the polishing layers such as copper in a neighboring manner, projected by applying alternating current Si in wafer polishing
Layer forms the vortex input signal of vortex, thus as shown in figure 3, the synthesis of the vortex 50E guided from electric conductivity polishing layer
The polishing layer thickness of wafer W is detected in the changing value of impedance and phase difference.
But whenever the offset of determination sensor itself, thickness transducer 50 all has difference.That is, as shown in figure 4,
According to the type and environment of the thickness transducer 50 for being used in chemical-mechanical polishing process, even if relative to not conductive material
Signal in the S50e of region has the signal in the polishing layer region S50c of conductive material constant, what is formed by conductive material
Each deviant off2, off3 of output signal Sox1, Sox2, Sox3 for receiving in wafer polishing layer also have difference.
Therefore, if not considering in chemical-mechanical polishing process because of peripheries such as the characteristic of thickness transducer 50 or polishing pads
Environmental factor and become the polishing layer thickness that wafer W is measured in the case where the difference of different deviants, then due to including polishing
The evaluated error of thickness degree, and there are problems that accurately measuring the polishing layer thickness of wafer W.
Summary of the invention
The technical issues of solution
The present invention proposes to solve the problems, such as described above, it is an object of the present invention in chemically mechanical polishing work
The deviation for the eddy current sensor being measured to the thickness of wafer polishing layer is compensated in sequence, so as to more accurately obtain
Obtain the thickness of wafer polishing layer.
Also, it is an object of the present invention to detect the thickness of the abrasion based on polishing pad in chemical-mechanical polishing process
Variable quantity, and compensated as benchmark come the thickness of the wafer polishing layer to measurement, thus in chemical-mechanical polishing process
In more accurately obtain the thickness of wafer polishing layer.
As a result, it is an object of the present invention to detect the polishing end time point of chip, accurately accurately to control chip
Polishing thickness.
Technical solution
In order to realize that purpose as described above, the present invention provide chemical mechanical polishing apparatus, the chemical machinery as chip
Burnishing device, wherein include: polishing plate, upper surface polished pad covers, and carries out rotation；Rubbing head is thrown in chemical machinery
In light process, it is in contact with the plate surface of above-mentioned chip to pressurize；Thickness transducer, Xiang Shangshu chip apply signal, come
Obtain the thickness information of above-mentioned chip；Control unit, in the state that above-mentioned chip is not located at the bottom plate of above-mentioned diaphragm, reception is come from
After first output signal of above-mentioned thickness transducer, in the state of making above-mentioned chip be located at the bottom plate of above-mentioned diaphragm
During learning mechanical polishing process, the second output signal is received from above-mentioned thickness transducer, thus from above-mentioned second output letter
Number the signal of above-mentioned first output signal is subtracted to obtain the thickness distribution of above-mentioned chip.
This is to be located on polishing pad in an identical manner before the downside that chip is located at rubbing head in rubbing head
Under state, the first output signal as spacing wave is received from thickness transducer, and grasping the inclined of sensor itself in advance
In the case where shifting value, in a period of so that the state that chip is located at the downside of rubbing head executes chemical-mechanical polishing process, from
After wafer receipt has the second output signal of polishing layer thickness information, the school of the first output signal is subtracted from the second output signal
The thickness of wafer polishing layer is calculated in positive signal, so as to accurately obtain not by the offset characteristic of thickness transducer
The thickness of the wafer polishing layer of distortion.
This structure of the invention can be applicable to be received in wafer polishing layer later by thickness transducer irradiation light
By in the optical sensor of optical signal, but it especially more efficiently can be suitable for being formed with the throwing of conductive material on above-mentioned chip
Photosphere, so that use is in the case where polishing in above-mentioned chemical-mechanical polishing process to the polishing layer of above-mentioned metal material
The eddy current sensor of thickness transducer.
On the other hand, above-mentioned rubbing head can be provided with retaining ring, above-mentioned retaining ring is configured at around above-mentioned diaphragm, and including
The first component and second component, the above-mentioned first component are formed by conductive material, and are had mutually along being formed around above-mentioned chip
The First terrace of different height and second step face, above-mentioned second component is in the downside of the above-mentioned first component by non-conductive
Property stacking part forms, and is in contact in above-mentioned chemical-mechanical polishing process with above-mentioned polishing pad.
Like this, with retaining ring is formed by the first component and second component, the above-mentioned first component is by electroconductive component, with tool
There are First terrace and the mode in second step face to be formed, above-mentioned second component is formed in the first component by non-conductive component
Downside, there is a situation where being pressurizeed and being worn towards polishing pad due to the second component of non-conducting material, and with first
Step surface and second step face are formed with mutually different height by electroconductive component, can use the first step grasped in advance
The difference in height in face and second step face measures polishing pad from two output signals in First terrace and second step face
Amounts of thickness variation.
Therefore, reflect polishing in the thickness of wafer polishing layer calculated from the vortex output signal in wafer polishing layer
The amounts of thickness variation of pad, it is hereby achieved that the wafer polishing layer in view of the abrasion loss of polishing pad can accurately be determined
The beneficial effect of thickness.
At this point, above-mentioned First terrace and above-mentioned second step face are respectively formed as horizontal flat surface, so as to equal
Weighing apparatus ground obtains the vortex output signal in each step surface of the retaining ring rotated.
And, it is preferable that above-mentioned First terrace and the height tolerance in above-mentioned second step face are protected in whole circumference direction
Hold steady state value.
Moreover, above-mentioned First terrace and above-mentioned second step face difference are in a ring, and it is distributed in from center along radius
In the mutually different length in direction, the vortex in each step surface so as to balancedly obtain the retaining ring rotated exports letter
Number.
On the other hand, the above-mentioned first component can be formed by metal material, and above-mentioned second component can be by resin, plastics
Any one more than material formed.The electric current perforation second component applied as a result, comes the of conductive metal material
Vortex is generated in one component, so as to obtain vortex output signal in First terrace and second step face.
In this case, the configuration of above-mentioned thickness transducer is there are three more than, for receive respectively from above-mentioned chip,
State the output signal in First terrace and above-mentioned second step face.Thus, it is possible to from First terrace and second step face
Output signal in calculate the change value of thickness of polishing pad, and the thickness number of chip is obtained from the output signal in chip
According to.
On the other hand, the above-mentioned first component in a ring, so as to be easily installed at rubbing head, also, with along
The entire circular arc for surrounding chip forms step surface, can also be with even if rubbing head carries out rotation in chemical-mechanical polishing process
To receive the thickness change of output signal and real-time detection polishing pad from First terrace and second step face by sensor
Amount.
Even if moreover, above-mentioned second component not in a ring even, can constant maintenance and polishing pad but in a ring
The face being in contact, and the stable contact condition of polishing pad can be maintained with no damage.
On the other hand, another embodiment according to the present invention, the present invention provides cmp method, as chip
Cmp method, above-mentioned cmp method includes: wafer polishing step, and above-mentioned chip is made to be located at downside
In the state of, it is pressurizeed and is polished towards polishing pad using the rubbing head with retaining ring, above-mentioned retaining ring includes first
Component and second component, the above-mentioned first component are formed in around above-mentioned chip by conductive material, the thickness of the above-mentioned first component
Greater than the thickness of above-mentioned polishing layer, above-mentioned second component is formed in the downside of the above-mentioned first component by non-conductive component, and with
Above-mentioned polishing pad is in contact；First output signal receiving step, in the state that above-mentioned chip is not located at the bottom plate of above-mentioned diaphragm,
Receive the first output signal from above-mentioned thickness transducer；Second output signal receiving step, it is upper being located at above-mentioned chip
It states in the chemical-mechanical polishing process carried out in the state of the bottom plate of diaphragm, receives the second output letter from above-mentioned thickness transducer
Number；And polishing layer THICKNESS CALCULATION step, it is obtained from the signal that above-mentioned second output signal subtracts above-mentioned first output signal
The thickness distribution of above-mentioned chip.
Invention effect
As described above, the present invention can obtain it is following the utility model has the advantages that before the downside that chip is located at rubbing head, from thickness
The first output signal received as spacing wave is spent in sensor, and grasps the deviant of sensor itself in advance, so that brilliant
In a period of the state that piece is located at the downside of rubbing head executes chemical-mechanical polishing process, there is polishing layer thickness from wafer receipt
After second output signal of information, wafer polishing layer is calculated from the correction signal that the second output signal subtracts the first output signal
Thickness, so as to accurately obtain the thickness for the wafer polishing layer that do not distort by the offset characteristic of thickness transducer.
Also, the present invention can obtain following the utility model has the advantages that being located at chip in constituting chemical-mechanical polishing process
In the process of the retaining ring of the rubbing head to pressurize in the state of bottom surface, with forming retaining ring by the first component and second component,
The above-mentioned first component is formed in a manner of with First terrace and second step face as electroconductive component, and above-mentioned second
Part is formed in the downside of the first component by non-conductive component, occurs because of the second component of non-conducting material towards polishing pad
The case where being pressurizeed and being worn, so as to maintain the state swimmingly pressurizeed, and with First terrace and second
Step surface is formed with mutually different height by electroconductive component, can use the First terrace and second step grasped in advance
The difference in height in face to measure the thickness change of polishing pad from two output signals in First terrace and second step face
Amount, so that the thickness in wafer polishing layer calculated from the vortex output signal in wafer polishing layer reflects the platform from retaining ring
The amounts of thickness variation for the polishing pad that vortex output signal in terrace obtains, it is possible thereby to accurately determine in view of polishing pad
Abrasion loss wafer polishing layer thickness.
Detailed description of the invention
Fig. 1 is the main view for showing previous chemical mechanical polishing apparatus structure.
Fig. 2 is the top view of Fig. 1.
Fig. 3 is the half sectional view for being used in the rubbing head of Fig. 1.
Fig. 4 is the figure for showing for identical chip the vortex output signal measured.
Fig. 5 is the precedence diagram for showing the job order of chemical mechanical polishing apparatus of one embodiment of the invention.
Fig. 6 a is to show in the state of not set chip by a form of received first output signal of thickness transducer
Figure.
Fig. 6 b is to show using the chemical mechanical polishing apparatus of Fig. 5 the structure chart for executing chemical-mechanical polishing process.
Fig. 6 c is to show in the chemical-mechanical polishing process of Fig. 6 b by received second output signal of thickness transducer
The figure of one form.
Fig. 6 d is for the original to the control unit for calculating correction output signal in output signal shown in Fig. 6 a and Fig. 6 c
Manage the figure being illustrated.
Fig. 6 e and Fig. 6 f are the step surface for the retaining ring using rubbing head to calculate Fig. 6 a's of the thickness of rubbing head
The enlarged drawing of the part " B ".
Fig. 7 is the precedence diagram being illustrated for the principle of the thickness to the polishing pad for calculating Fig. 6 e and Fig. 6 f.
Symbol description
10: polishing plate 11: polishing pad
100: rubbing head 121: diaphragm
122: body part 123: retaining ring
123s1: First terrace 123s2: second step face
50,500: eddy current sensor 90: control unit
Specific embodiment
Hereinafter, to the chemical mechanical polishing apparatus 9 of one embodiment of the invention and being used in above-mentioned chemical machine referring to attached drawing
The rubbing head 100 of tool burnishing device 9 is described in detail.However, in the process that the present invention will be described, for this clear hair
Bright main idea illustrates omission to well known function or structure.
The chemical mechanical polishing apparatus 9 of one embodiment of the invention includes: polishing plate 10, and polished pad 11 covers, brilliant
The burnishing surface of piece W is in contact in a manner of being polished with above-mentioned polishing pad 11；Rubbing head 100, so that wafer W is located at bottom surface
State is pressurizeed, and wafer W is made to carry out rotation；Eddy current sensor 50 applies vortex, and receives output signal from polishing layer,
To detect the thickness of the polishing layer of wafer W；And control unit 90, apply alternating current to eddy current sensor 50, and from vortex
The polishing layer thickness of wafer W is detected in the output signal that sensor 50 receives.
Above-mentioned polishing plate 10 carries out rotation driving with the state that upper surface polished pad 11 covers.As shown in Figure 6 b, exist
Polishing plate 10 is provided with the through hole 10a for applying eddy current signal, it is thus possible to from the downside for being configured at through hole 10a
Thickness transducer 500 applies vortex to wafer W and retaining ring 123.
On the other hand, as shown in Figure 6 b, therefore thickness transducer 50, which can be fixed on polishing plate 10, can make thickness
Sensor 50 is rotated together with the polishing pad 11 rotated, and vortex output is received along the track Jing Guo wafer W
Signal.
Although downside and polishing plate that thickness transducer 50,500 is fixed on through hole 10a are illustrated in attached drawing together
10 structure, but another embodiment according to the present invention, thickness transducer 50,500 can be only arranged under through hole 10a
One in side and polishing plate 10.
As shown in Figure 6 a, above-mentioned rubbing head 100 includes: body part 122, carries out rotation driving from outside；Diaphragm 121,
It is provided between body part 122 in the state of pressure chamber C and is fixed on body part 122；And retaining ring 123, surround diaphragm 121
Bottom plate around.
Here, the pressure chamber C being formed between diaphragm 121 and body part 122 is prominent with annular by the bottom plate from diaphragm
Flat (flap) out is formed as being divided into multiple pressure chamber.Moreover, passing through gas from pressure regulating part 125
Pressure supply pipe 125a to supply air pressure to each pressure chamber C, for adjusting the pressure of pressure chamber C, and to pressure chamber C
When supplying air pressure, the bottom plate of diaphragm is pushed downwards, to be located at the crystalline substance of the downside of the bottom plate of diaphragm towards the pressurization of polishing pad 11
Piece W.
At the same time, as body part 122 rotates, diaphragm 121 also rotates together with, therefore, positioned at the bottom plate of diaphragm 121
The wafer W of bottom also rotates together with, and realizes chemical-mechanical polishing process.
Moreover, retaining ring 123 is in the annular around the wafer W being enclosed in chemical-mechanical polishing process, adjusts and be located at gear
The air pressure of the holding room 123C of 123 upside of circle, and in chemical-mechanical polishing process as shown in fig 6e, maintain bottom surface 123s quilt
The state that polishing pad 11 pressurizes.As a result, in retaining ring 123, the second component including the bottom surface 123s being in contact with polishing pad 11
1232 are formed by the expendable material of resin, the plastics that can form abrasion etc.
That is, retaining ring 123 includes the second component 1232 being in contact with polishing pad 11 and is laminated in the upper of second component 1232
The first component 1231 of side.It is formed in the boundary face being in contact by the first component 1231 and second component 1232 with different
Height First terrace 123s1 and second step face 123s2.At this point, the first component 1231 can be by conductions such as such as metals
Material is formed, to generate vortex.Moreover, second component is formed by non-conducting materials such as such as plastics or resin, for making from whirlpool
The input signal that flow sensor 51,52 applies is passed through, and is generated and be vortexed in the first component 1231.
At this point, First terrace 123s1 and second step face 123s2 are formed as horizontal flat surface, and with from diaphragm 121
Center towards being formed with annular spread in the length of mutually different radial direction.Even if retaining ring 123 is in chemical machinery as a result,
It is persistently rotated in polishing process, for generating the first thickness sensor 51 of vortex in First terrace 123s1 and for the
As defined in the second thickness sensor 52 that two step surface 123s2 generate vortex can also be generated in each step surface 123s1,123s2
Vortex, so as to obtain uniform vortex output signal Sos1, Sos2 in each step surface 123s1,123s2 of retaining ring 123.
Moreover, as long as the form that the first component 1231 is formed as surrounding around wafer W is (including circumferentially with phase
The form that the mode mutually separated configures) it is just enough, but be formed as the shape surrounded around wafer W using the annular as closed curve
State, to, even if retaining ring 123 and rubbing head 100 carry out rotation together, come from thickness transducer in chemical-mechanical polishing process
52 vortex also reaches each step surface 123s1,123s2 always.
As long as also, second component 1232 equally also in order to prevent the disengaging of wafer W and be formed as surround wafer W around
Form (including circumferentially in the form of mode spaced apart from each other configures) just enough, but preferably, in order to polishing
Pad 11 maintain as defined in contact surface and in a ring.
On the other hand, the height tolerance y of the First terrace 123s1 of retaining ring 123 and second step face 123s2 are entirely justifying
The constant formation of circumferential direction, thus have any position of circumferencial direction can consistently obtain vortex output signal Sos1,
The advantages of Sos2.Moreover, as shown, First terrace 123s1 and second step face 123s2 distinguishes in a ring, to be distributed
At the center of the bottom plate from diaphragm along in the mutually different length of radial direction.
Conduct in the rubbing head 100 of the one embodiment of the invention constituted in the manner, in retaining ring 123
The first component 1231 of conductive material and second component 1232 as non-conducting material are with the platform with mutually different height
The mode of terrace 123s1,123s2 are formed, and are come by the input signal Si 1 that applies from eddy current sensor 51,52, Si2
Each step surface 123s1,123s2 introduction of eddy currents of two components 1232, so as to receive step surface in eddy current sensor 51,52
Output signal (for example, resonant frequency or resultant impedance) Sos1, Sos2 based on vortex in 123s1,123s2.
At this point, due to having grasped the height tolerance y between each step surface 123s1,123s2, thus have the advantages that
The mutual not phase that can be obtained from output signal Sos1, Sos2 in real-time reception mutually different step surface 123s1,123s2
Real-time detection is in chemical-mechanical polishing process as caused by the abrasion of polishing pad 11 in two same output signals Sos1, Sos2
Amount of thickness reduction.
On the other hand, the First terrace 123s1 and second step of the bottom surface of the first component 1231 of retaining ring 123 are formed in
Face 123s2 can retaining ring 123 ' as shown in Figure 6 f be formed as the rough pattern being mutually inserted.Thus, it is possible to which obtaining can refer to
It prevents from being staggered in fixed position and more accurate and easily to combine the first component 1231 ' and second component 1232 ' excellent
Point.
Above-mentioned eddy current sensor 50 has the sensor coil (not shown) of the hollow screw shape in winding n times, thus from
Control unit 90 receives alternating current to apply input signal Si (Si1, Si2, Si3) from sensor coil in the form of magnetic flux, and to
Electric conductor applies vortex, change as a result, in the thickness of electric conductor or between electric conductor at a distance from the case where changing
Under, receive resonant frequency caused by the vortex occurred in electric conductor or resultant impedance as output signal So (So1, So2,
So3), to be used in the thickness change for detecting electric conductor from the variation of output signal So or the distance until electric conductor.
An embodiment according to the present invention, eddy current sensor 50 generate vortex in the external position Pe of rubbing head 100 to connect
Output signal is received, generates vortex in the lower position Pr of the First terrace 123s1 of retaining ring 123 to receive the output letter of third-one
Number So31 (for convenience, being labeled as appended drawing reference 51 in the accompanying drawings), in the downside position of the second step face 123s2 of retaining ring 123
It sets Pr and generates vortex to receive-two output signal So32 (for convenience, being labeled as appended drawing reference 52 in the accompanying drawings) of third, and
The downside Pc of the polishing layer of wafer W generates vortex to receive the second output signal So2.In the accompanying drawings, although being separately provided with three
A eddy current sensor 50 (51,52,53), but thickness transducer 50 can be by that can issue in three positions and receive the one of signal
A eddy current sensor is constituted.
In the case where no conductive material, output signal received by eddy current sensor 50,500 is not because synthesizing
The reduction amount of impedance and be measured as a reference value (default) or zero (0) in principle, the conductive material the case where
Under, output signal received by eddy current sensor 50,500 due to the reduction amount of resultant impedance with from a reference value or zero subtract with
The corresponding size output of the reduction amount of resultant impedance.For example, the output valve of eddy current sensor 50,500 can be shown as electricity
It presses (voltage).
In a period of executing chemical-mechanical polishing process, above-mentioned control unit 90 applies alternating current to eddy current sensor 50
Stream to make high-frequency current pass through sensor coil to flow, and is fallen into a trap from the wafer polishing layer Le received output signal So of institute
Calculate the thickness of wafer polishing layer Le.
For this purpose, firstly, as shown in Figure 6 a, the state of wafer W is not arranged in the baseplate underside of the diaphragm 121 of rubbing head 100
Under, thickness transducer 50 receives the first output signal So1 (S110) by the downside of rubbing head 100.
Here, since the first output signal So1 does not have conductive material, vortex only exists in a period of by rubbing head 100
It is guided in the first component 1231 of the retaining ring 123 of rubbing head 100, and makes due to based on the reduction of this resultant impedance
One output signal So1 has low value Sos1, Sos2 in each step surface 123s1,123s2 only in the downside of retaining ring 123.
Moreover, as shown in Figure 6 a, being received in the region in addition to the lower position Pr except retaining ring 123 by thickness transducer 50
The first output signal So1 in the form of flat, and occur wanted by peripheral structure with thickness transducer 50 and in addition to this
The deviant off for combining to present between element.First output signal obtained of thickness transducer 50 is transmitted to control unit 90
So1。
If obtaining the deviant of each sensor 50 by each thickness transducer 50 and by the first output signal So1
Off then as shown in Figure 6 b in the state that wafer W to be set to the downside of diaphragm 121 of rubbing head 100, executes chemical machinery
Polishing process (S120).
In a period of executing chemical-mechanical polishing process, multiple thickness transducers 50,500 or positioned at retaining ring 123
The downside of First terrace 123s1 and second step face 123s2 or the First terrace 123s1 and second for passing through retaining ring 123
The downside of step surface 123s2, or the downside positioned at the downside of wafer W or Jing Guo wafer W.In this course, thickness senses
Device 50,500 receives the second output signal So2 (S130).
As fig. 6 c, in the position Pe of the not conductive material in the upside of thickness transducer 50, above-mentioned second is defeated
Out signal So2 become signal corresponding with deviant off, in the upside of thickness transducer 50 have the first component 1231 or
In position Pr, the Pc as wafer polishing layer Le with conductive material, above-mentioned second output signal So2, which becomes, includes conduction material
The signal value Sow of the thickness information of material.
Moreover, transmitting the second output signal So2 received by thickness transducer 50,500 to control unit 90.
Therefore, after receiving the first output signal So1 and the second output signal So2 from thickness transducer 50,500,
Control unit 90 subtracts the first output signal in the second output signal So2 to only extract the thickness information of wafer polishing layer Le
So1 to exclude deviant off, and generates the compensation output signal SoC for containing only the thickness information of wafer polishing layer Le.
Moreover, the thickness te (S140) of wafer polishing layer Le is obtained from compensation output signal SoC by control unit 90.
On the other hand, although Fig. 6 d is with the letter in 123 region of retaining ring of the first output signal So1 and the second output signal So2
Number identical mode of size is simplified to show, but in the process for executing chemical-mechanical polishing process, by by polishing pad
Thickness caused by 11 abrasion is reduced, in the region locating for retaining ring 123, the value of the second output signal So2 and the first output letter
The value of number So1 generates difference.
In other words, in the process for executing chemical-mechanical polishing process (S120), if to the downside or warp that are located at retaining ring 123
The thickness transducer 50 of the downside of retaining ring 123 is crossed (hereinafter, being respectively designated as first thickness sensor 51 and second for convenience
Thickness transducer 52) apply alternating current, then it is sensed in a manner of generating vortex from first thickness sensor 51 and second thickness
Device 52 applies First terrace 123s1 from magnetic flux form to the retaining ring 123 formed by conductive material and second step face 123s2
Input signal Si (S151).
At this point, since the second component 1232 of the retaining ring 123 of rubbing head 100 is formed by non-conducting materials such as plastics, resins,
Therefore, reason is vortexed from the magnetic flux that first thickness sensor 51 and second thickness sensor 52 apply without generating.But
The magnetic flux (magnetic flux) of second component 1232 is penetrated through in the First terrace 123s1 of the first component 1231 and second
Vortex is generated in step surface 123s2.
Moreover, as wafer W polished pad 11 is pressurizeed and is polished, and chemical-mechanical polishing process is carried out, but in crystalline substance
In the chemical-mechanical polishing process of piece W there is a phenomenon where the surface of polishing pad 11 is also worn and it is gradually thinning.Therefore, it is executing
It, will be in First terrace 123s1 and in first thickness sensor 51 and second thickness sensor 52 while step S151
The resonant frequency in vortex or resultant impedance comprising reactive component and resistance components that two step surface 123s2 occur are as the
Three-one output signal So31 and-two output signal So32 of third receive to be vortexed sensor 51,52, and control unit 90 receives
Output signal So31, So32 that reducer coupling receives to calculate the as caused by the abrasion of polishing pad 1 from output signal So31, So32
The amount of movement of one step surface 123s1 and second step face 123s2.At this point, due to having grasped First terrace 123s1 and second
The height tolerance y of step surface 123s2, thus can from received output signal So1, So2 real-time detection polishing pad 11
Abrasion loss (S152).
Therefore, the present invention can obtain following the utility model has the advantages that control unit 90 can be by S152 from retaining ring 123 each
Obtain the change value of thickness of polishing pad 11 in output signal So31, So32 of terrace 123s1,123s2 in real time, thus can to
The thickness value of the wafer polishing layer Le obtained in S140 is corrected, it is hereby achieved that the change value of thickness of polishing pad 11, biography
The thickness value for the accurate wafer polishing layer Le that sensor 50,500 and the deviant off of peripheral structure element are corrected
(S160)。
More than, although preferred embodiments of the present invention have been disclosed for illustrative in illustrative mode, the scope of the present invention
It is not limited to this specific embodiment, but change appropriate can be carried out in scope documented by scope of patent protection
More.
Claims (12)
1. a kind of chemical mechanical polishing apparatus, the chemically mechanical polishing dress of the chip as the polishing layer for being formed with conductive material
It sets characterized by comprising
Plate, the covering of upper surface polished pad are polished, and carries out rotation；
Rubbing head is in contact with above-mentioned chip in chemical-mechanical polishing process to pressurize；
Thickness transducer, Xiang Shangshu chip applies eddy current signal, to obtain the thickness information of above-mentioned chip；
Control unit, it is pervious in the implementation chemical-mechanical polishing process that above-mentioned chip is not located at the bottom plate of the diaphragm of above-mentioned rubbing head
Under state, after receiving the first output signal from the bottom surface of above-mentioned rubbing head by above-mentioned thickness transducer, make above-mentioned chip
In the state of being installed on the bottom plate of the diaphragm of above-mentioned rubbing head and implementing above-mentioned chemical-mechanical polishing process, in the chemical machinery
The second output signal is received from above-mentioned thickness transducer in polishing process, to subtract above-mentioned first from above-mentioned second output signal
The thickness distribution of above-mentioned chip is obtained in the signal of output signal.
2. chemical mechanical polishing apparatus according to claim 1, which is characterized in that
The polishing layer of conductive material is formed on above-mentioned chip, thus to above-mentioned polishing in above-mentioned chemical-mechanical polishing process
Layer is polished.
3. chemical mechanical polishing apparatus according to claim 1, which is characterized in that
Above-mentioned rubbing head has retaining ring, and above-mentioned retaining ring is configured at around above-mentioned diaphragm, and including the first component and second component,
The above-mentioned first component is formed by conductive material, and has the First of mutually different height along formation around above-mentioned chip
Terrace and second step face, above-mentioned second component are laminated in the downside of the above-mentioned first component by non-conductive component, and
It is in contact in above-mentioned chemical-mechanical polishing process with above-mentioned polishing pad.
4. chemical mechanical polishing apparatus according to claim 3, which is characterized in that
Above-mentioned First terrace and above-mentioned second step face are respectively formed as horizontal flat surface.
5. chemical mechanical polishing apparatus according to claim 3, which is characterized in that
Above-mentioned First terrace and the height tolerance in above-mentioned second step face keep constant value in whole circumference direction.
6. chemical mechanical polishing apparatus according to claim 3, which is characterized in that
Above-mentioned First terrace and above-mentioned second step face respectively in a ring, and are distributed in from center along the mutual not phase of radial direction
In same length.
7. chemical mechanical polishing apparatus according to claim 3, which is characterized in that
The above-mentioned first component is formed by metal material, and above-mentioned second component is by material more than any one in resin, plastics
It is formed.
8. chemical mechanical polishing apparatus according to claim 3, which is characterized in that
The configuration of above-mentioned thickness transducer there are three more than, for receive respectively from above-mentioned chip, above-mentioned First terrace and
State the output signal in second step face.
9. chemical mechanical polishing apparatus according to claim 3, which is characterized in that
The above-mentioned first component is in a ring.
10. chemical mechanical polishing apparatus according to claim 9, which is characterized in that
Above-mentioned second component is in a ring.
11. a kind of cmp method, the chemically mechanical polishing side of the chip as the polishing layer for being formed with conductive material
Method characterized by comprising
Wafer polishing step utilizes the above-mentioned polishing with retaining ring in the state of making above-mentioned chip be located at the downside of rubbing head
Head is pressurizeed and is polished towards polishing pad, and above-mentioned retaining ring includes the first component and second component, the above-mentioned first component
It being formed in around chip by conductive material, the thickness of the above-mentioned first component is greater than the thickness of above-mentioned polishing layer, and above-mentioned second
Part is formed in the downside of the above-mentioned first component by non-conductive component, and is in contact with above-mentioned polishing pad；
First output signal receiving step is not located at the implementation chemical machinery of the bottom plate of the diaphragm of above-mentioned rubbing head in above-mentioned chip
In the state of before polishing process, the first output signal is received from thickness transducer, above-mentioned thickness transducer is used for from above-mentioned throwing
The bottom surface of shaven head obtains the thickness information of above-mentioned chip；
Second output signal receiving step, make above-mentioned chip be located at above-mentioned rubbing head diaphragm bottom plate and implement chemical machinery
In the state of polishing process, the second output signal is received from above-mentioned thickness transducer in chemical-mechanical polishing process；
Polishing layer THICKNESS CALCULATION step obtains above-mentioned from the signal that above-mentioned second output signal subtracts above-mentioned first output signal
The thickness distribution of chip,
Above-mentioned thickness transducer is the eddy current sensor for applying vortex to the polishing layer.
12. cmp method according to claim 11, which is characterized in that
The above-mentioned first component is formed by conductive material, and has the of mutually different height along being formed around above-mentioned chip
One step surface and second step face.
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| TWI825075B (en) * | 2018-04-03 | 2023-12-11 | 美商應用材料股份有限公司 | Polishing apparatus, polishing system, method, and computer storage medium using machine learning and compensation for pad thickness |
| KR20200063491A (en) * | 2018-11-28 | 2020-06-05 | 주식회사 케이씨텍 | Substrate processing apparatus |
| CN110193775B (en) * | 2019-03-12 | 2021-09-17 | 上海新昇半导体科技有限公司 | Chemical mechanical polishing method and chemical polishing system |
| CN113231955B (en) * | 2021-06-04 | 2022-08-23 | 上海芯物科技有限公司 | Thickness measurement calibration method and device of eddy current sensor and grinding system |
| WO2023035247A1 (en) * | 2021-09-10 | 2023-03-16 | 华为技术有限公司 | Chemical-mechanical polishing device and control method therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1505554A (en) * | 2001-05-02 | 2004-06-16 | Ӧ�ò��Ϲ�˾ | Integrated endpoint detection system with optical and eddy current monitoring |
| CN101978486A (en) * | 2008-04-17 | 2011-02-16 | 诺发***股份有限公司 | Methods and apparatuses for determining thickness of a conductive layer |
| CN102049732A (en) * | 2010-08-30 | 2011-05-11 | 清华大学 | Method for measuring thickness of edge film of silicon wafer |
| CN104471685A (en) * | 2012-07-25 | 2015-03-25 | 应用材料公司 | Monitoring retaining ring thickness and pressure control |
| CN104907920A (en) * | 2014-03-12 | 2015-09-16 | 株式会社荏原制作所 | Method of correcting film thickness measurement value, film thickness corrector and eddy current sensor |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3303963B2 (en) * | 1997-01-20 | 2002-07-22 | 株式会社東京精密 | Wafer thickness processing amount measuring device |
| JP4790475B2 (en) * | 2006-04-05 | 2011-10-12 | 株式会社荏原製作所 | Polishing apparatus, polishing method, and substrate film thickness measurement program |
| JP5611214B2 (en) * | 2008-10-16 | 2014-10-22 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Eddy current gain compensation |
| US20120276662A1 (en) * | 2011-04-27 | 2012-11-01 | Iravani Hassan G | Eddy current monitoring of metal features |
| KR102203419B1 (en) * | 2013-12-09 | 2021-01-15 | 주식회사 케이씨텍 | Chemical mechanical polishing method and apparatus |
| KR101561815B1 (en) * | 2014-06-23 | 2015-10-20 | 주식회사 케이씨텍 | Method of measuring wafer metal layer thickness in chemical mechanical polishing process and retainer ring of carrier head used therein |
-
2015
- 2015-10-27 KR KR1020150149350A patent/KR101684842B1/en active IP Right Grant
- 2015-12-30 CN CN201511021045.8A patent/CN106625201B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1505554A (en) * | 2001-05-02 | 2004-06-16 | Ӧ�ò��Ϲ�˾ | Integrated endpoint detection system with optical and eddy current monitoring |
| CN101978486A (en) * | 2008-04-17 | 2011-02-16 | 诺发***股份有限公司 | Methods and apparatuses for determining thickness of a conductive layer |
| CN102049732A (en) * | 2010-08-30 | 2011-05-11 | 清华大学 | Method for measuring thickness of edge film of silicon wafer |
| CN104471685A (en) * | 2012-07-25 | 2015-03-25 | 应用材料公司 | Monitoring retaining ring thickness and pressure control |
| CN104907920A (en) * | 2014-03-12 | 2015-09-16 | 株式会社荏原制作所 | Method of correcting film thickness measurement value, film thickness corrector and eddy current sensor |
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