CN106611728A - Device and method for checking coating state of flux of flip chip - Google Patents
Device and method for checking coating state of flux of flip chip Download PDFInfo
- Publication number
- CN106611728A CN106611728A CN201610561313.3A CN201610561313A CN106611728A CN 106611728 A CN106611728 A CN 106611728A CN 201610561313 A CN201610561313 A CN 201610561313A CN 106611728 A CN106611728 A CN 106611728A
- Authority
- CN
- China
- Prior art keywords
- chip
- flip
- light
- scaling powder
- salient point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 58
- 239000011248 coating agent Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000004907 flux Effects 0.000 title claims abstract description 20
- 238000012790 confirmation Methods 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims description 118
- 238000007689 inspection Methods 0.000 claims description 33
- 239000003795 chemical substances by application Substances 0.000 claims description 20
- 238000002835 absorbance Methods 0.000 claims description 8
- 230000000007 visual effect Effects 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/203—Fluxing, i.e. applying flux onto surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/08—Auxiliary devices therefor
- B23K3/082—Flux dispensers; Apparatus for applying flux
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Immunology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Coating Apparatus (AREA)
- Quality & Reliability (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Theoretical Computer Science (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The invention relates to a device and a method for checking coating state of a flux of a flip chip. The device and a method for checking coating state of a flux comprises a nozzle driving portion, a main illuminating portion, a shooting portion, and a vision confirmation portion. The nozzle driving portion is used to make flip chip on which the flux is coated on salient points move to a check position. The main illuminating portion is used to illuminate light with wavelength range of a special region to the salient points of the flip chip, the special region being high in absorption rate aimed at the flux. The shooting portion is used to shoot reflection light of the light illuminated from the main illuminating portion. The vision confirmation portion is used to read videos or images shot by the shooting portion, and display whether the flux is coated on the salient points of the flip chip. In addition, the method for checking coating state of a flux of a flip chip comprises: based on the shot reflection light, determining the position of the reflection light which is relatively low in light intensity to be the position which is coated with the flux; and determining the position with relatively low light intensity to be the position which is not coated with the flux.
Description
Technical field
The present invention relates to the scaling powder coating state inspection apparatus and method of a kind of flip-chip, in particular to one
The light of the wave-length coverage with specific region that irradiation scaling powder most can absorb by force is planted, so as to according to the reflected light for being reflected
Light intensity difference come check flip-chip scaling powder coat state method.
Background technology
In recent years, with the development of electronic communication, electronic equipment increasingly tends to miniaturization, lightweight.Therefore,
The electronic unit (for example, semiconductor chip) for being built in various electronic equipments must is fulfilled for highly integrated, subminiaturization.
Therefore, for by high density, subminiature surface mounting devices (SMD：Surface Mount Device) attachment
To tellite (PCB：Printed Circuit Board, hereinafter, referred to as " substrate ") surface mount
The research of technology is just actively carried out.
As this surface mounting technology, replace conventional bonding techniques and have it is a kind of will be used as partly using salient point (Bump)
The electrode of the nude film (die) of conductor chip and flip-chip (Flip Chip) technique of substrate connection.
Flip-chip is can be to be mounted directly to electronic installation or semiconductor chip with (Face-down) form that faces down
The device of the mounting board of substrate.
When flip-chip is installed to into substrate, the electric conductivity salient point that can pass through to generate on the chip surface is realized being electrically connected
Connect, and when chip is installed to into substrate, the chip is mounted with inverted state, and based on this flip-chip is referred to as.
Flip-chip does not need bonding wire (Wire bond), therefore the size of flip-chip to be significantly less than common process and draw
The chip of line bonding operation (Wire-bonding process).Additionally, in wire bonding, between the chip and substrate of bonding wire
Connection be to be carried out in the way of once welding one, conversely, in flip-chip, can perform simultaneously, therefore, compare bonding wire
Chip, the expense of flip-chip will obtain thrifty, and the connecting length of flip-chip is shorter than the chip of wire bonding, because
This its performance also will be improved.
Hereinafter, to being carried out the technique that flip-chip is mounted to substrate briefly according to above-mentioned controlled collapsible chip connec-tion
It is bright.
Salient point processing (Bumping) technique is first carried out, i.e. separate and take out chip from chip (wafer), and overturn
(flip) chip and overturn the position of upper and lower surface.
Backflow (Reflow) technique is performed afterwards, i.e. the head of placement equipment will be moved it after the chip being reversed absorption
To predetermined position, and when needed the face to including salient point is heated.
Now, it is the Joint Properties that improve substrate and chip, execution is fluxed (Fluxing) technique, i.e. to the convex of chip
Point transfer scaling powder (Flux).
Afterwards, following technique is performed：By the use of camera vision (camera vision) recognize substrate as will mount
The liner in the precalculated position of chip, so as to recognize the position of salient point, and makes salient point abut liner to mount (Mounting) chip.
Finally, heated by backflow to engage substrate and chip, and by coating the underfill of epoxy resin
(Under filling) and chip is protected the solidification (Curing) hardened by heat etc..
In controlled collapsible chip connec-tion as above, carry out towards chip salient point shift scaling powder flux technique when,
It may happen that scaling powder cannot normally be applied to the situation of the salient point of chip, in the case, chip is without normally
The possibility row for being joined to substrate is larger, accordingly, may cause the problem for producing bad electronic unit.
In this regard, in the prior art, it is proposed for checking whether scaling powder is normally applied to many of chip bump
The method of sample.
For example, with following method：Chip is impregnated into (Deeping) after the container equipped with scaling powder, using phase
Machine is shot to the salient point vestige of scaling powder in container and whether is checked the coating of scaling powder.But this method, due to helping
Solder flux is made up of liquid, thus its vestige will pop-off, be difficult to easily check for chip bump so as to exist
The problem for whether coating of scaling powder.
Additionally, also there is one kind to be added to scaling powder can easily realize identification process by discernible other additives
Technology, but for the technology, may there are scaling powder characteristic variations.
In addition, it is also proposed that the video that mistake is coated on the state of the salient point of chip by using camera shooting scaling powder and obtains
Or image is checking the method for whether coating of the scaling powder for chip bump, however, in the case, because scaling powder is
Colourless liquid, therefore need to use with high price in order to the scaling powder that correctly judges is applied to the state of the salient point of chip
The camera of camera lens, so as to there is a problem of that generation expense is born.
[prior art literature]
[patent documentation]
Korean granted patent the 10-1377444th
Japanese Laid-Open Patent the 2008-041758th
The content of the invention
The present invention is to be conceived to above-mentioned various problems and propose, technical task to be solved by this invention is to provide
A kind of scaling powder coating state inspection apparatus of following flip-chip and method, the device and method is to coating fluxing agent
The light of the wave-length coverage with specific region that the salient point irradiation scaling powder of flip-chip most can absorb by force, accordingly according to right
It is compared and judges with the difference of the light intensity of the light of the salient point reflection for being not coated with scaling powder from the salient point of coating fluxing agent, from
And whether can more easily check the coating of scaling powder.
Additionally, technical task to be solved by this invention is the scaling powder coating status checkout for providing a kind of flip-chip
Device and method, the light of the wave-length coverage with specific region that the device and method most can be absorbed using scaling powder by force and
Easily check scaling powder for the salient point of chip coating whether such that it is able to bad electronic product is produced in prevention.
The problem of the present invention is not limited to problem as above, and those skilled in the art can be according to note hereinafter
Carry and will be readily understood that NM other problems.
For solving the scaling powder coating status checkout dress of the flip-chip according to an embodiment of the invention of the problem
Putting to include：Suction nozzle drive division, the flip-chip for making scaling powder be coated in salient point moves to inspection position；Key lighting
Portion, for having the wavelength model for the high specific region of the absorbance of the scaling powder to the irradiation of the salient point of the flip-chip
The light for enclosing；Shoot part, for shooting the reflected light of the light from key lighting portion irradiation；And visual confirmation portion, it is used for
Reading shown by video or image that the shoot part shoots scaling powder for the flip-chip salient point coating with
No, the wave-length coverage of the specific region can be that there is the absorbance for the scaling powder to present with the change of wavelength
Multiple peak values in a peak value wave-length coverage.
Here, the key lighting portion can have institute from the side of the lower side of the salient point to the irradiation of inclined direction
State the light of the wave-length coverage of the specific region that scaling powder most can absorb by force, and be irradiated to the salient point of the flip-chip
The light can reflect along the lower direction of the salient point of the flip-chip.
Furthermore, it is possible to including：Reflecting part, the path of the reflected light for will reflect from the salient point of the flip-chip
Guide to the shoot part side, can also include in the lower side of the reflecting part：Floor light portion, for according to input signal
And make that there is the illumination of the wave-length coverage for the high specific region of the absorbance of the scaling powder to be mapped to the flip-chip
Salient point.
In the case, the reflecting part can be beam splitter, for making the light transmission from floor light portion irradiation,
And make the reflected light back reflected from the salient point of the flip-chip.
Additionally, the key lighting portion could be formed with loophole, it is anti-for reflect the salient point from the flip-chip
Light transmission is penetrated, and passes through the light from floor light portion irradiation.
Additionally, can be the wavelength model in 400nm～500nm regions from the wave-length coverage of the light of key lighting portion irradiation
Enclose, and band filter can be arranged in the key lighting portion, so that the wave-length coverage with the specific region
Light irradiation.
Additionally, can be the wavelength model in 400nm～500nm regions from the wave-length coverage of the light of floor light portion irradiation
Enclose, and band filter can be arranged in the floor light portion, so that the wave-length coverage with the specific region
Light irradiation.
In addition, according to an embodiment of the invention the scaling powder coating state detection method of flip-chip is using upside-down mounting core
The scaling powder coating state inspection apparatus of piece check the method that the scaling powder of flip-chip coats state, can include following step
Suddenly：The flip-chip for making coating fluxing agent moves to inspection position；Have to the salient point irradiation of the flip-chip and be directed to institute
State the light of the wave-length coverage of the high specific region of absorbance of scaling powder；Shoot from the anti-of the light of key lighting portion irradiation
Penetrate light；Reading shows painting of the scaling powder for the salient point of the flip-chip by video or image that the shoot part shoots
Whether cover；And, based on the reflected light for photographing, can be by the position judgment of the reflected light with relatively low light intensity
To coat the position of fluxing agent；It is to be not coated with the position of scaling powder by the position judgment with relatively low light intensity.
Other details of the present invention are included in detailed description and accompanying drawing.
According to an embodiment of the invention the scaling powder of flip-chip coats status checkout to device and method, and the present invention can
To provide following effect：To having that the salient point irradiation scaling powder of the flip-chip of coating fluxing agent most can absorb by force
The light of the wave-length coverage of specific region, hereby it is possible to basis is to the salient point from coating fluxing agent and is not coated with the convex of scaling powder
The difference of the light intensity of the light of point reflection is compared and judges, more easily whether is the coating of inspection scaling powder.
Additionally, being that the scaling powder for providing a kind of flip-chip coats state according to technical task to be solved by this invention
Check device and method, the present invention can provide following effect：Using scaling powder most can absorb by force with given zone
The light of the wave-length coverage in domain and easily check scaling powder for the salient point of chip coating whether such that it is able to prevention is produced
Bad electronic product.
Effect of the invention is not limited to content as above, and more various effect will be contained in this explanation
In book.
Description of the drawings
Fig. 1 is diagrammatically to illustrate the scaling powder coating state inspection using flip-chip according to an embodiment of the invention
Look into device and check that the forward direction flip-chip of the scaling powder coating state of flip-chip coats the fluxes device of scaling powder
Axonometric chart.
Fig. 2 is that the scaling powder for illustrating flip-chip according to an embodiment of the invention coats state inspection apparatus schematically
Composition module map.
Fig. 3 is the scaling powder coating state inspection apparatus for diagrammatically illustrating flip-chip according to an embodiment of the invention
Pie graph.
Fig. 4 is to pass through chart and illustrate to help weldering to confirm the wave-length coverage region of the light that scaling powder most can absorb by force
The figure of the absorption spectrum measurement result of agent.
Fig. 5 is the scaling powder coating state inspection apparatus for diagrammatically illustrating flip-chip according to an embodiment of the invention
Part sectioned view of the key lighting portion for being adopted to the path of the salient point irradiation light of flip-chip.
Fig. 6 is the plane graph of Fig. 5.
Fig. 7 and Fig. 8 are the images for illustrating the light intensity of the reflected light in the case of the reading as follows of visual confirmation portion and showing
And the figure of curve chart：Upside-down mounting core is being checked using the coating state inspection apparatus of flip-chip according to an embodiment of the invention
The scaling powder of piece coats the result of state, and scaling powder is not applied to the situation of the salient point of flip-chip and is applied to upside-down mounting core
The situation of the salient point of piece.
Fig. 9 is the figure for illustrating the dot shape in the state of scaling powder is applied to the salient point of flip-chip.
Symbol description
110：Suction nozzle drive division 120：Reflecting part
130：Shoot part 140：Visual confirmation portion
150：Power supply and control unit 210：Key lighting portion
220：Floor light portion
Specific embodiment
If with reference to the embodiment that explains with reference to the accompanying drawings, the advantage and feature of the present invention and reaching these
Method can become definitely.But embodiments disclosed below is the invention is not limited in, can be by mutually different various shapes
Realizing, the purpose for being only to provide the present embodiment is intactly to disclose the present invention to state, and makes the technical field belonging to the present invention
In have common knowledge technical staff intactly recognize scope of the invention, and the present invention only by institute in claims
The category of record is defining.In entire disclosure, identical reference marks censures identical element.
In addition, with reference to sectional view and/or person's skeleton diagram as preferable exemplary plot of the invention in this specification
The embodiment of description is illustrated.Therefore, the form of exemplary plot may become according to manufacturing technology and/or person's allowable error etc.
Shape.In addition, in each accompanying drawing represented by the present invention, it is contemplated that the convenience of explanation, each element may be by how many
Zoom in or out less and represent.Throughout the specification, identical reference marks censures identical element.
First, the preferred embodiment in the coating state inspection apparatus to flip-chip of the invention and method is carried out
Before explanation, the fluxes device to scaling powder to be coated to flip-chip is briefly described bright.
Fig. 1 is diagrammatically to illustrate the scaling powder coating state inspection using flip-chip according to an embodiment of the invention
Look into device and check that the forward direction flip-chip of the scaling powder coating state of flip-chip coats the fluxes device of scaling powder
Axonometric chart.
As illustrated, fluxes device is included：The scaling powder storage part 20 of disk like, for depositing on substrate parts 30
Storage scaling powder F；Blade part 50, is flattened scaling powder along above-below direction movement with specific thickness；Z axis part 2, with being used for
The suction nozzle 3 of absorption flip-chip 4.
Moved downwards according to the driving of motor with the Z axis part 2 for the suction nozzle 3 that adsorbs flip-chip 4 so that
The salient point 4a of flip-chip 4 abut to storage fluxing agent scaling powder storage part 20 bottom, backward fluxes fall
The salient point 4a of cartridge chip 4.
When fluxes operation as above is carried out, if not forming scaling powder to the salient point 4a of flip-chip 4
Uniform coating, then flip-chip cannot normally be engaged on substrate, so as to bad electronic unit will be produced.
The present invention proposes that a kind of scaling powder coating condition checkout gear of flip-chip and the scaling powder using the device are applied
State detection method is covered, to solve the problems, such as to produce bad electronic unit as above.
Fig. 2 is that the scaling powder for illustrating flip-chip according to an embodiment of the invention coats state inspection apparatus schematically
Composition module map；Fig. 3 is the scaling powder coating state for diagrammatically illustrating flip-chip according to an embodiment of the invention
The pie graph of check device.
As shown in FIG. 2 and 3, according to an embodiment of the invention the scaling powder of flip-chip coats state inspection apparatus
100 can include：Suction nozzle drive division 110, key lighting portion 210, shoot part 130 and visual confirmation portion 140.
Suction nozzle drive division 110 can be by forming comprising constituting for following item：Suction nozzle 114, is formed with many for absorption one side
The flip-chip 116 of individual salient point 118；112, for making the suction nozzle 114 move to the position of setting.
Therefore, suction nozzle drive division 110 can perform following function：Absorption is formed with salient point 118 and is soaked by scaling powder
Stain technique and salient point 118 one side coat fluxing agent flip-chip 116 after so as to move to for checking scaling powder
Coating state setting position.
Key lighting portion 210 can perform the function of the irradiation light of salient point 118 of the flip-chip 116 to coating fluxing agent.
Here, key lighting portion 210 can be according to power supply and the Voltage On state/cut-off signal and input signal of control unit 150
And the irradiation light of salient point 118 of the flip-chip 116 to coating fluxing agent.
Key lighting portion 210 can include multiple light sources 202, and the plurality of light source 202 most can be absorbed by force with scaling powder
The wave-length coverage irradiation light of specific region.
Applicant of the present invention measures to grasp the wave-length coverage region of the light that scaling powder most can absorb by force
The absorption spectrum (Spectrum) of scaling powder, the value of its measurement result is illustrated as illustrated in fig. 4.As reference, in the curve of Fig. 4
In figure, transverse axis represents wavelength (nm), and vertical pivot represents the absorbing amount under specific wavelength.
As shown in Figure 4, it can be seen that scaling powder is to the absorbtivity of light as wave-length coverage is from the wavelength model in 300nm regions
Enclose and gradually uprise and increase, especially, under the wave-length coverage of the 420nm residing for first peak value or so, the light for being absorbed is most.
Further, it can be seen that：As wave-length coverage is gradually uprised from the wave-length coverage of 420nm or so, the absorbtivity elder generation of light
Tail off, then under the wave-length coverage of the 465nm residing for second peak value or so, the light for being absorbed is relatively more.
Therefore, according to an embodiment of the invention the scaling powder coating state inspection apparatus of flip-chip can be provided and included
The key lighting portion 210 of the light source 202 of the wave-length coverage with 400nm～500nm regions.
Be provided in the light source 202 in key lighting portion 210 can provide using GaN (gallium nitride) as material, with 350～
The wave-length coverage in 450nm regions, the light emitting diode of irradiation blue light.
At present this light emitting diode is commercially extensively sold, therefore can be using the light emitting diode as key lighting portion
210 light source and use, or can be in light source arrangement band filter (Band Pass Filter) etc., so that light can
Irradiated with the wave-length coverage (400nm～500nm) in the region.
Here, band filter can play the function of the light transmission for only making particular range of wavelengths.
Or, in addition to the light source of the light for wave-length coverage of the irradiation with the region, to irradiation even other ripples
For the situation of the light source of the white light that long scope is included, it is also possible to arrange band filter etc. and with the region
Wave-length coverage (400nm～500nm) irradiation light.
As reference, in the scaling powder coating state inspection apparatus and method of flip-chip according to an embodiment of the invention
In, the wave-length coverage of the light that most can be absorbed by force to scaling powder is most preferably the situation of 400nm～500nm and is illustrated,
But in the case where the scaling powder with new light characteristic is provided, the absorbtivity of light may change, and in the case, also may be used
With using the light source of the wave-length coverage with other regions.
In addition, Fig. 5 and Fig. 6 are the scaling powder coatings for diagrammatically illustrating flip-chip according to an embodiment of the invention
Profile and plane graph of the key lighting portion that state inspection apparatus are provided to the path of the salient point irradiation light of flip-chip.
As illustrated, key lighting portion 210 can form the composition comprising following item：The multiple light sources being illustrated above
202；Substrate parts 204, the path of direct light, so that the light from the irradiation of the light source 202 can be with upwardly inclined direction
Irradiate to the salient point 118 of flip-chip 116.
In the substrate parts 204 in key lighting portion 210, the loophole 206 for making light transmission is formed at central part, and
Around the loophole 206, i.e. can be disposed with multiple light sources around the loophole 206 of the lower side of substrate parts 204
202。
Therefore, the light from the irradiation of light source 202 is reflected when by substrate parts 204, and the light for being reflected is fallen with direction
The salient point 118 of cartridge chip 116 is irradiated with upwardly inclined direction.
As described above, the light irradiated from the light source 202 in key lighting portion 210 is irradiated to flip-chip with upwardly inclined direction
116 salient point, and, the light for being irradiated will reflect from the salient point 118 of flip-chip 116, and now, the reflected light for being reflected can
Irradiated downwards with the loophole 206 by key lighting portion 210.
The reflected light reflected from the salient point 118 of flip-chip 116 is taken by shoot part 130, and the reflected light can
Change path to reflect with the reflecting part of the downside that can be disposed at flip-chip 116 and key lighting portion 210 and drawn
It is directed at the side of shoot part 130.
For example, as shown in figure 3, the downside in flip-chip 116 and key lighting portion 210 can be disposed with about with 45 degree
The reflecting part 120 of the inclined form of angle, and shoot part 130 can be arranged in the position with the level of reflecting part 120.
Accordingly, flip-chip 116 and key lighting portion 210 and shoot part 130 can be respectively arranged in form about 90
The position of the angle of degree, in this regard, will hereinafter be described in detail.
Hereinafter, to coating state inspection apparatus 100 using by the scaling powder for constituting the flip-chip for being formed as above
Check that scaling powder is illustrated for the method for the coating state of the salient point 118 of flip-chip 116.
First, it is moved into through the flip-chip 116 of fluxes operation if suction nozzle drive division 110 adsorbs
Scaling powder coating status checkout position, then power supply and control unit 150 supply power supply to key lighting portion 210, while providing input letter
Number, so as to open (on) key lighting portion 210.
Therefore, the multiple light sources 202 in key lighting portion 210 are lit, and so as to difference irradiation light, and the light for being irradiated is logical
Reflect when crossing substrate parts 204, so as to be irradiated with the direction of salient point 118 towards flip-chip 116.
Now, the light source 202 in key lighting portion 210 is arranged in around the downside of flip-chip 116, so as to by light source 202
The light of irradiation will be irradiated with acclivitous form towards the salient point 118 of flip-chip 116, and with as above
The light that mode is irradiated after the salient point 118 of flip-chip 116 is reflected, the court by the loophole 206 in key lighting portion 210
To downside.
Reflected once again by reflecting part 120 by the reflected light of the loophole 206 in key lighting portion 210, and be directed to bat
The side of portion 130 is taken the photograph, so as to shoot part 130 can shoot the reflected light reflected from the salient point 118 of flip-chip 116.
The reflected light reflected by reflecting part 120 will photographe portion 130 shoot and be converted to video or image, and vision
Confirmation portion 140 will read video as above or image and judge painting of the scaling powder for the salient point 118 of flip-chip 116
Whether cover.
Just have what scaling powder most can absorb by force as above from what the light source 202 in key lighting portion 210 irradiated
The light of the wave-length coverage (that is, the wave-length coverage region of 400nm～500nm) of specific region, therefore, part light can be coated on
The scaling powder of the salient point 118 of flip-chip 116 is absorbed.
For example, it is assumed that the size of the light irradiated from the light source in key lighting portion 210 is 100, then as part light is coated on
The scaling powder of the salient point 118 of flip-chip 116 is absorbed, and the size of the light reflected from the salient point 118 of flip-chip 116 will drop
To less than 100 (60 or so).
Conversely, in the case where the salient point 118 of flip-chip 116 is not coated with scaling powder, from the salient point of flip-chip 116
The size of the light of 118 reflections will be approximately kept at 80.
As described above, in the state of the coating fluxing agent of salient point 118 of flip-chip 116, if it is assumed that most of convex
The surface-coated fluxing agent of point 118, and the surface of part salient point is not coated with scaling powder, then from the salient point of coating fluxing agent
The size (that is, light intensity) of the reflected light of reflection will be due to light loss and relatively small, phase caused by the light absorbs of scaling powder institute
Instead, the size (that is, light intensity) of the reflected light for reflecting from the salient point for being not coated with scaling powder is relatively large.
Fig. 7 and Fig. 8 are the images for illustrating the light intensity of the reflected light in the case of the reading as follows of visual confirmation portion and showing
And the figure of curve chart：Upside-down mounting core is being checked using the coating state inspection apparatus of flip-chip according to an embodiment of the invention
The scaling powder of piece coats the result of state, and scaling powder is not applied to the light intensity of the reflected light in the case of the salient point of flip-chip
The light intensity (B-B ' lines) of (A-A ' lines) and the reflected light in the case of being applied to the salient point of flip-chip.
First, as shown in Figure 7, it can be seen that the reflected light for never coating the salient point reflection of fluxing agent is presented relatively large
Light intensity, relatively small light intensity is presented from the reflected light of the salient point reflection of coating fluxing agent.
Its reason is to form the certain wave that scaling powder most can absorb by force according to the light irradiated from key lighting portion 210
Long range areas, the reflected light reflected from the salient point of uncoated scaling powder intactly keeps the light intensity from the irradiation of Lighting Division 210, phase
Instead, for the reflected light from the salient point reflection of coating fluxing agent, its light intensity is with the one of the light irradiated from key lighting portion 210
It is partly absorbed and reduces.
In addition, as shown in Figure 7 and Figure 8, it can be seen that the light intensity around salient point 118 is relatively larger than its central part
Light intensity, its reason is, as described above, because the light source in key lighting portion 210 is arranged in the periphery of the downside of flip-chip 116, institute
It is illuminated with acclivitous form with the light irradiated from the light source 202 in key lighting portion 210, so as to light by cover to salient point
118 side surface position (that is, surrounding position).
That is, its reason is, salient point 118 as shown in the upper figure in Fig. 9 forming generally spherical in shape shape, therefore phase
Than the situation that light is irradiated with rectilinear direction, the amount of the light reflected in the case where light irradiates from sideway stance is more, accordingly, salient point
The light intensity that 118 surrounding position is presented is larger.
However, during the operation of fluxing for the salient point 118 of flip-chip 116 is carried out, because salient point 118 is pressed
Pressure, as shown in figure below of Fig. 9, the central part 119 of the front end of its salient point 118 is likely to form the shape of flat (flat), here
In the case of, possibly cannot normally make the light reflection from the irradiation of key lighting portion 210.
Therefore, in the scaling powder coating state inspection apparatus 100 of flip-chip according to an embodiment of the invention, may be used also
With comprising the floor light portion 220 being used for rectilinear direction towards the irradiation light of salient point 118, to tackle the salient point of coating fluxing agent
118 front end is pressed and has a case that flat position 119.
With reference to Fig. 3, floor light portion 220 can be arranged on the downside vertical curve of flip-chip 116, with can be along straight
Line direction and to the irradiation light of salient point 118 of flip-chip 116.
Preferably due to the downside in flip-chip 116 and key lighting portion 210 is disposed with reflecting part 120, therefore, auxiliary
Lighting Division 220 can be arranged in the downside of reflecting part 120.
Here, beam splitter (Beam splitter) can be provided as reflecting part 120, for making the light of irradiation directly saturating
Reflected light back is made while mistake.
In addition, floor light portion 220 can also be according to power supply and the on/off and input signal of control unit 150
And be together lit with key lighting portion 210.
Additionally, can pass through reflecting part 120 from the light of the irradiation of floor light portion 220, and by the printing opacity in key lighting portion 210
Hole 206 and shine directly into the salient point 118 of flip-chip 116, and, the light for irradiating in the manner can be from upside-down mounting
The reflex reflection of salient point 118 of chip 116 and pass through the loophole 206 in key lighting portion 210, and be reflected to by reflecting part 120
The side of shoot part 130.
The reflected light reflected by reflecting part 120 can be converted to video or image so that photographe portion 130 shoots, and vision
Confirmation portion 140 will read video as above or image and judge the scaling powder of the salient point 118 for flip-chip 116
Whether coat, however, judged according to the difference of the light intensity of the reflected light for being reflected the method for whether coating of scaling powder with upper
The content illustrated in text is identical, therefore omits explanation repeatedly.
The people with ABC is all appreciated that the present invention is not changing its technology in the technical field belonging to the present invention
Other specific forms can be embodied as in the case of thought or required feature.It is therefore understood that the above embodiments are all of
All it is exemplary, rather than circumscribed in aspect.The scope of the present invention is showed according to claims, rather than above-mentioned
Detailed description, and from the meaning and scope in claims also have the concept of its equivalent derived from have altered or deform
Form be interpreted as being included within the scope of the invention.
Claims (10)
1. a kind of scaling powder of flip-chip coats state inspection apparatus, including：
Suction nozzle drive division, the flip-chip for making scaling powder be coated in salient point moves to inspection position；
Key lighting portion, for having for the high given zone of the absorbance of the scaling powder to the irradiation of the salient point of the flip-chip
The light of the wave-length coverage in domain；
Shoot part, for shooting the reflected light of the light from key lighting portion irradiation；And
Visual confirmation portion, shows that scaling powder is directed to the upside-down mounting by video or image that the shoot part shoots for reading
Whether the coating of the salient point of chip to be,
The wave-length coverage of the specific region is that there is the absorbance for the scaling powder to present with the change of wavelength
The wave-length coverage of a peak value in multiple peak values.
2. the scaling powder of flip-chip as claimed in claim 1 coats state inspection apparatus, wherein,
The key lighting portion has the scaling powder can be most from the side of the bottom of the salient point to the irradiation of inclined direction
The light of the wave-length coverage of the specific region for absorbing by force,
The light for being irradiated to the salient point of the flip-chip reflects along the lower direction of the salient point of the flip-chip.
3. the scaling powder of flip-chip as claimed in claim 2 coats state inspection apparatus, wherein,
Including：Reflecting part, for the Route guiding of the reflected light that will reflect from the salient point of the flip-chip to the bat
Portion side is taken the photograph,
Also include in the lower side of the reflecting part：Floor light portion, helps for being made to have according to input signal for described
The illumination of the wave-length coverage of the high specific region of the absorbance of solder flux is mapped to the salient point of the flip-chip.
4. the scaling powder of flip-chip as claimed in claim 3 coats state inspection apparatus, wherein,
The reflecting part is beam splitter, for making the light transmission from floor light portion irradiation, and is made from the flip-chip
Salient point reflection reflected light back.
5. the scaling powder of flip-chip as claimed in claim 3 coats state inspection apparatus, wherein,
The key lighting portion is formed with loophole, and the reflected light for reflecting the salient point from the flip-chip is passed through, and is made
Pass through from the light of floor light portion irradiation.
6. the scaling powder of flip-chip as claimed in claim 1 coats state inspection apparatus, wherein,
Wave-length coverage from the light of key lighting portion irradiation is the wave-length coverage in 400nm～500nm regions.
7. the scaling powder of the flip-chip as described in claim 1 or 6 coats state inspection apparatus, wherein,
Band filter is arranged in into the key lighting portion, so that the light irradiation of the wave-length coverage with the specific region.
8. the scaling powder of flip-chip as claimed in claim 3 coats state inspection apparatus, wherein,
Wave-length coverage from the light of floor light portion irradiation is the wave-length coverage in 400nm～500nm regions.
9. the scaling powder of the flip-chip as described in claim 3 or 8 coats state inspection apparatus, wherein,
Band filter is arranged in into the floor light portion, so that the illumination of the wave-length coverage with the specific region
Penetrate.
10. a kind of scaling powder coating state detection method of flip-chip, using the scaling powder of flip-chip status checkout is coated
Device checks that the method for the scaling powder coating state of flip-chip comprises the steps：
A () makes the flip-chip of coating fluxing agent move to inspection position；
B () has the wavelength model for the high specific region of the absorbance of the scaling powder to the salient point irradiation of the flip-chip
The light for enclosing；
C () shoots the reflected light of the light from key lighting portion irradiation；
D () is read and is shown scaling powder for the salient point of the flip-chip by video or image that the shoot part shoots
Whether coat；
E () is checked as follows in (d) step：Based on the reflected light for photographing, will be with relatively
The position judgment of the reflected light of low light intensity is to coat the position of fluxing agent；By the position judgment with relatively low light intensity
To be not coated with the position of scaling powder.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150149285A KR102107363B1 (en) | 2015-10-27 | 2015-10-27 | Apparatus and method for coating state check of flux |
| KR10-2015-0149285 | 2015-10-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106611728A true CN106611728A (en) | 2017-05-03 |
| CN106611728B CN106611728B (en) | 2019-11-05 |
Family
ID=58614858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610561313.3A Active CN106611728B (en) | 2015-10-27 | 2016-07-15 | Soldering flux coating state inspection device and method for flip chip |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR102107363B1 (en) |
| CN (1) | CN106611728B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108665444A (en) * | 2018-04-12 | 2018-10-16 | 浙江大学 | A kind of fluorescence PCB three-proofing coating coating quality detecting systems and method |
| CN110081924A (en) * | 2018-01-25 | 2019-08-02 | 韩华精密机械株式会社 | Method for checking coating state of soldering flux of flip chip |
| CN114247601A (en) * | 2021-12-21 | 2022-03-29 | 合肥京东方星宇科技有限公司 | Chip soldering flux coating device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113252686B (en) * | 2021-05-13 | 2021-12-17 | 中科长光精拓智能装备(苏州)有限公司 | Electronic component bonding method |
| CN118134925A (en) * | 2024-05-07 | 2024-06-04 | 亿芯微半导体科技(深圳)有限公司 | Semiconductor chip flip method, device, equipment and storage medium |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008041758A (en) * | 2006-08-02 | 2008-02-21 | Juki Corp | Method and apparatus for inspecting transferred state of flux |
| JP2010216882A (en) * | 2009-03-13 | 2010-09-30 | Npc Inc | Tab lead soldering device for solar cell |
| CN102083583A (en) * | 2007-07-23 | 2011-06-01 | 汉高有限公司 | Solder flux |
| KR101377444B1 (en) * | 2012-10-30 | 2014-03-25 | 주식회사 고려반도체시스템 | Method of inspecting flux state dotted on solder balls of chip |
| JP2015088534A (en) * | 2013-10-29 | 2015-05-07 | パナソニックＩｐマネジメント株式会社 | Electronic component mounting method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3802957B2 (en) * | 1996-12-19 | 2006-08-02 | 富士機械製造株式会社 | Imaging and locating method and system for glossy spherical coronal projection |
| JPH11326236A (en) * | 1998-05-13 | 1999-11-26 | Ricoh Co Ltd | Surface layer defect-detection device |
| JP3877495B2 (en) * | 2000-04-27 | 2007-02-07 | 株式会社日立ハイテクインスツルメンツ | Electronic component recognition device |
-
2015
- 2015-10-27 KR KR1020150149285A patent/KR102107363B1/en active IP Right Grant
-
2016
- 2016-07-15 CN CN201610561313.3A patent/CN106611728B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008041758A (en) * | 2006-08-02 | 2008-02-21 | Juki Corp | Method and apparatus for inspecting transferred state of flux |
| CN102083583A (en) * | 2007-07-23 | 2011-06-01 | 汉高有限公司 | Solder flux |
| JP2010216882A (en) * | 2009-03-13 | 2010-09-30 | Npc Inc | Tab lead soldering device for solar cell |
| KR101377444B1 (en) * | 2012-10-30 | 2014-03-25 | 주식회사 고려반도체시스템 | Method of inspecting flux state dotted on solder balls of chip |
| JP2015088534A (en) * | 2013-10-29 | 2015-05-07 | パナソニックＩｐマネジメント株式会社 | Electronic component mounting method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110081924A (en) * | 2018-01-25 | 2019-08-02 | 韩华精密机械株式会社 | Method for checking coating state of soldering flux of flip chip |
| CN108665444A (en) * | 2018-04-12 | 2018-10-16 | 浙江大学 | A kind of fluorescence PCB three-proofing coating coating quality detecting systems and method |
| CN114247601A (en) * | 2021-12-21 | 2022-03-29 | 合肥京东方星宇科技有限公司 | Chip soldering flux coating device |
| CN114247601B (en) * | 2021-12-21 | 2024-02-02 | 合肥京东方星宇科技有限公司 | Chip scaling powder coating device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106611728B (en) | 2019-11-05 |
| KR20170048774A (en) | 2017-05-10 |
| KR102107363B1 (en) | 2020-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106611728A (en) | Device and method for checking coating state of flux of flip chip | |
| TWI382753B (en) | Reflowable camera module with integrated flash | |
| CN102683509B (en) | Led module | |
| JPH0428269A (en) | Mounting structure of led bare chip | |
| US8319961B2 (en) | Apparatus to perform a non-contact test of a semiconductor package | |
| US20110293168A1 (en) | Method for mounting transparent component | |
| JP2005538565A5 (en) | ||
| CN111416028A (en) | Semiconductor chip repairing method and semiconductor chip repairing device | |
| WO2004025737A1 (en) | Semiconductor device exhibiting enhanced pattern recognition when illuminated in a machine vision system | |
| CN108075024A (en) | Fingerprint identification module and its manufacturing method with lighting function | |
| CN106611719B (en) | The scaling powder of flip-chip coats state detection method | |
| JP2014002150A (en) | Position grasping device for fluorescent body of light-emitting diode, component mounting device including position grasping device for fluorescent body of light-emitting diode, position grasping method for fluorescent body of light-emitting diode, and lens attaching method | |
| CN105979695A (en) | Method of manufacturing printed circuit board and method of inspecting printed circuit board | |
| JP3988703B2 (en) | Light emitting diode | |
| KR102457527B1 (en) | Method for coating state check of flux | |
| US12028987B2 (en) | Method for soldering an electronic component to a circuit board by jetting liquefied solder into a through hole | |
| CN110324986A (en) | The preparation method of charactron | |
| JP2011119561A (en) | Printed wiring board, printed circuit board and method of manufacturing the same | |
| Elger et al. | High power LED subassemblies for automotive front light application | |
| KR20110094972A (en) | Flip chip mounter | |
| CN110289218A (en) | A kind of integrated circuit plate producing process and integrated circuit board | |
| US20230377124A1 (en) | Exposed pad integrated circuit package | |
| CN107994042A (en) | A kind of multi-cam module | |
| JP2004158830A (en) | Light emitting diode | |
| KR19980073992A (en) | PCB board inspection device and inspection method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: Gyeongnam Changwon City, South Korea Applicant after: HANWHA AEROSPACE Co.,Ltd. Address before: Gyeongnam Changwon City, South Korea Applicant before: HANWHA TECHWIN Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20190410 Address after: Gyeongnam Changwon City, South Korea Applicant after: Hanwha Precision Machinery Co.,Ltd. Address before: Gyeongnam Changwon City, South Korea Applicant before: HANWHA AEROSPACE Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |