CN106601917A - Preparation method of lead-free organic and inorganic cation common hybridization perovskite material and film thereof - Google Patents
Preparation method of lead-free organic and inorganic cation common hybridization perovskite material and film thereof Download PDFInfo
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Abstract
The invention discloses a preparation method of a lead-free organic and inorganic cation common hybridization perovskite material and a film thereof. Common hybridization of BiI3 is performed by employing organic cations including methylamino or ethylamino and inorganic cations including Rb or Cs to obtain the lead-free organic and inorganic cation common hybridization perovskite material, and the lead-free organic and inorganic cation common hybridization perovskite film is prepared by employing the magnetron sputtering method. The invention relates to the field of solar photoelectric materials and semiconductor materials. According to the method, Bi replaces Pb and becomes the central ion of the perovskite material so that potential pollution of the perovskite material on the environment is avoided; besides, the perovskite material obtained by common hybridization of Bi and organic and inorganic cations has low band gaps so that electron transition is facilitated, and the photoelectric conversion efficiency is improved.
Description
Technical field
The present invention relates to solar energy electric material, field of semiconductor materials, more particularly to a kind of unleaded organic-inorganic sun from
The preparation method of sub common hydridization perovskite material and its thin film.
Background technology
With the development of human society, energy resource consumption increasingly increases, and the development of solar-photovoltaic technology undoubtedly enjoys the mankind
Concern.Perovskite material, as one of 2013 " ten big technological breakthrough of the world ", it is considered to be development high-efficiency solar
The most potential new material of battery.The highest transformation efficiency of perovskite solaode has been up to 22.1% at present.
The ABX3 type compounds of the usually organic inorganic hybridization of the perovskite in perovskite solaode, wherein A
For methylamino, ethylamino- or inorganic K, Rb, Cs plasma；B is the metal ions such as Pb, Sn or Ti, X
For aniones such as Cl, Br, I.If all inorganic ionss of A, the perovskite material is referred to as inorganic perovskite material,
If A is the organic molecules, referred to as organic inorganic hybridization perovskite material such as methylamino, ethylamino-.
Perovskite material research the most widely be methylamino, ethylamino- hydridization PbI2 and the iodine methylamine lead that obtains and
Iodine ethamine lead.But the central ion of this organic inorganic hybridization perovskite material is Pb, there is potential environmental pollution and ask
Topic.
Document [Anna J. Lehner et.al, Chenistry Materials, 2015,27,7137-7148.
Crystal and Electronic Structures of Complex Bismuth Iodides A3Bi2I9(A = K,
Rb, Cs) Related to Perovskite:Aiding the Rational Design of Photovoltaics] report
The road crystal structure of A3Bi2I9 (A=K, Rb, Cs), it is found that the band gap of RbBi2I9 is 2.1eV；Document [
Michael Saliba. et.al,Science.aah5557 (2016), Incorporation of rubidium
Cations into perovskite solar cellsimproves photovoltaic performance] report
The research of Rb ion doping methiodide amine lead perovskite materials, and 20.4% photoelectric conversion is obtained on the area of 0.5cm2
Efficiency.Document [354 ISSUE 6308 of Abhishek Swarnkaret.al, Science, OCT.2016, VOL,
Quantum dot-induced phasestabilization of a-CsPbI3 perovskite for high-
Efficiency photovoltaics] report heat injection synthetic method and the performance study result of CsPbI3 quantum dots.
Above-mentioned literature method has a problem that that is, the band gap of RbBi2I9 is 2.1eV, and methiodide amine lead perovskite material
Material is leaded perovskite material, there is potential problem of environmental pollution.The present invention proposes a kind of nothing of the ion centered on Bi
Lead organic inorganic hybridization perovskite material.It is well known that the stability of purely inorganic ion hydridization perovskite material is more preferably, but light
Electrical property is slightly poor；The photoelectric properties of the perovskite material of organic-inorganic ion hydridization are projected, but stability is slightly worse.Meanwhile, text
The hydridization perovskite material of organic-inorganic ion described in offering is anode ion for the employing simultaneously of organic methylamino or ethylamino-
Anion is inorganic halogen ion.What stability was poor main reason is that organic anion is combined into central ion
Material meet water or air after can decompose reaction and cause the photoelectric properties sharp-decay of perovskite material.
The content of the invention
It is of the invention at least one not enough described in above-mentioned prior art to overcome, there is provided a kind of photoelectric properties are projected, stablized
The high environmentally friendly common hydridization perovskite material of unleaded organic-inorganic cation of property.
In order to solve above-mentioned technical problem, the present invention is achieved by the following technical programs：
A kind of common hydridization perovskite material of unleaded organic-inorganic cation, the common hydridization calcium of the unleaded organic-inorganic cation
Titanium ore material is obtained by common hydridization BiI3 of the inorganic cations such as the organic cations such as methylamino or ethylamino and Rb or Cs.
The present invention is using common hydridization BiI3 of inorganic cation such as the organic cation such as methylamino or ethylamino and Rb or Cs
The common hydridization perovskite material of unleaded organic-inorganic cation is obtained, replaces Pb to become the central ion of perovskite material with Bi,
Potential pollution of the perovskite material to environment is avoided, additionally, the perovskite material that Bi is obtained with the common hydridization of organic-inorganic cation
Material is conducive to electron transition with relatively low band gap, improves electricity conversion.The organic inorganic hybridization perovskite material of the present invention
Material is different from traditional organic inorganic hybridization perovskite material, and commonly called organic inorganic hybridization perovskite refers to cation and is
Organic methylamino or ethylamino- organic ion, anion be inorganic iodide ion, organic inorganic hybridization of the present invention be then sun from
Subdivision in addition to organic methylamino, ethylamino-, the inorganic ionss such as also inorganic potassium, Rubidium, caesium.By introducing in cation side
Inorganic ionss so that the stability of perovskite material of the present invention is greatly improved.The inorganic cations such as Rb or Cs with have
The perovskite material that common hydridization BiI3 of machine cation is obtained has excellent photoelectric properties, and the doping of Rb, Cs plasma
The electricity conversion of perovskite material is improve, Rb, Cs ion is by the impact to perovskite material structure so that its forbidden band
Width is adjusted；Rubidium, the suitable outer electronic structure of cesium ion also cause these ions to have more preferable opto-electronic conversion simultaneously
Performance..
The method of the common hydridization perovskite material of unleaded organic-inorganic cation and its thin film, comprises the steps：
S1. by BiI3, iodine methylamine or iodine ethamine, RbI or CsI or KI stoichiometrically 1:1.8~2.2:0.8 ~ 1.2 proportioning is mixed
Grinding is closed, the common hydridization perovskite material of unleaded organic-inorganic cation is obtained；
S2. the perovskite material that step S1 is obtained is put in mould and perovskite target material is pressed under 5 ~ 150MPa pressure；
S3. the perovskite target for step S2 being obtained is put into vacuum magnetic-control sputtering platform and carries out magnetron sputtering, and film thickness reaches 50 ~
Deflate after 1500nm, obtain the common hydridization perovskite thin film of unleaded organic-inorganic cation.
The prior perovskite material for preparing is put into vacuum magnetic-control sputtering platform as target using magnetron sputtering method by the present invention
Carrying out magnetron sputtering, to obtain the common hydridization perovskite of unleaded organic-inorganic cation strong with base material adhesion, dense uniform thin
Film, so as to further improve its photoelectric properties, is advantageously implemented large area preparation.
In step S1, BiI3, iodine methylamine or iodine ethamine, RbI or CsI or KI grinding before addition DMF isopropanol or its
Its alcohols, is dried after grinding, obtains the common hydridization perovskite material of unleaded organic-inorganic cation.DMF is added before grinding
Or isopropanol or other alcohols are conducive to the synthesis of perovskite material.
In step S1, BiI3, iodine methylamine or iodine ethamine, RbI or CsI or KI stoichiometrically 1:1:1 proportioning, is conducive to
Each raw material fully reacts.
In step S1, after BiI3, iodine methylamine or iodine ethamine, RbI or CsI or KI mixed grindings, 100 ~ 300 DEG C are heated to,
Cooling is taken out, and obtains the common hydridization perovskite material of unleaded organic-inorganic cation.Grinding post-heating causes perovskite material to tie
It is brilliant more sophisticated, more perfect crystal structure is obtained, so as to further improve the photoelectric properties of perovskite material.
In step S1, after BiI3, iodine methylamine or iodine ethamine, RbI or CsI or KI mixed grindings, heat under argon protection
To 100 ~ 600 DEG C, cooling is taken out, and obtains the common hydridization perovskite material of unleaded organic-inorganic cation.Argon can anti-block
Change, especially prevent the decomposition of iodide.
In step S2, vacuum sealing is carried out after perovskite material compacting and obtain perovskite target.
In step S2, the perovskite material is suppressed under 10 ~ 100MPa pressure.
In step S3, vacuum magnetic-control sputtering platform is evacuated to into 10 before carrying out magnetron sputtering-4~10-6Pa is filled with argon extremely
0.5~0.8Pa。
In step S3, Magnetron Sputtering Thin Film is deflated after reaching 100 ~ 1000nm and is taken out.
Compared with prior art, the present invention has the advantages that：
The present invention replaces Pb to become the central ion of perovskite material with Bi, using the organic cations such as methylamino or ethylamino with
Common hydridization BiI3 of the inorganic cations such as Rb or Cs obtains the common hydridization perovskite material of unleaded organic-inorganic cation, it is to avoid calcium
Potential pollution of the titanium ore material to environment, additionally, the perovskite material that Bi is obtained with the common hydridization of organic-inorganic cation has
Relatively low band gap, is conducive to electron transition, improves electricity conversion.Organic inorganic hybridization of the present invention is cationic moiety
In addition to organic methylamino, ethylamino-, the inorganic ionss such as also inorganic potassium, Rubidium, caesium, by cation side introduce it is inorganic from
Son so that the stability of perovskite material of the present invention is greatly improved.The inorganic cations such as Rb or Cs with it is organic sun from
The doping that the perovskite material that sub common hydridization BiI3 is obtained has excellent photoelectric properties, Rb, Cs plasma improves calcium titanium
The electricity conversion of pit wood material.The prior perovskite material for preparing is put into very as target by the present invention using magnetron sputtering method
Empty magnetic control platform carries out magnetron sputtering, and to obtain unleaded organic-inorganic cation strong with base material adhesion, dense uniform jointly miscellaneous
Change perovskite thin film, so as to further improve its photoelectric properties, be advantageously implemented large area preparation.
Description of the drawings
Fig. 1 is the X-ray diffractogram of the common hydridization perovskite material of unleaded organic-inorganic cation of the present invention.
Specific embodiment
In order to allow those skilled in the art to more fully understand technical scheme, with reference to the present invention is made into
One step is illustrated, but embodiment is not limited in any form to the present invention.
Embodiment 1
The common hydridization perovskite material of a kind of unleaded organic-inorganic cation, by methylamino organic cation and Rb inorganic cations
Common hydridization BiI3 is obtained.
The preparation method of the common hydridization perovskite material of the unleaded organic-inorganic cation and its thin film, including following step
Suddenly：
S1. by BiI3, iodine methylamine, RbI stoichiometrically 1:2:The mixing of 1 proportioning is ground 15 minutes in being put into mortar, obtains palm fibre
The common hydridization perovskite material of the unleaded organic-inorganic cation of black；
S2. the perovskite material that step S1 is obtained is put in mould compressing under 45MPa pressure, then vacuum sealing is
Obtain perovskite target；
S3. the perovskite target for step S2 being obtained is put in vacuum magnetic-control sputtering platform, is evacuated to 10-5Pa, is filled with argon extremely
0.65Pa, opening radio-frequency power supply carries out magnetron sputtering, and film thickness is deflated after reaching 550nm and taken out, and obtains unleaded organic-inorganic
The common hydridization perovskite thin film of cation.
Embodiment 2
The common hydridization perovskite material of a kind of unleaded organic-inorganic cation, by methylamino organic cation and Cs inorganic cations
Common hydridization BiI3 is obtained.
The preparation method of the common hydridization perovskite material of the unleaded organic-inorganic cation and its thin film, including following step
Suddenly：
S1. by BiI3, iodine methylamine, CsI stoichiometrically 1:2:The mixing of 1 proportioning is ground 15 minutes in being put into mortar, obtains palm fibre
The common hydridization perovskite material of the unleaded organic-inorganic cation of black；
S2. the perovskite material that step S1 is obtained is put in mould compressing under 45MPa pressure, then vacuum sealing is
Obtain perovskite target；
S3. the perovskite target for step S2 being obtained is put in vacuum magnetic-control sputtering platform, is evacuated to 10-5Pa, is filled with argon extremely
0.65Pa, opening radio-frequency power supply carries out magnetron sputtering, and film thickness is deflated after reaching 550nm and taken out, and obtains unleaded organic-inorganic
The common hydridization perovskite thin film of cation.
Embodiment 3
The common hydridization perovskite material of a kind of unleaded organic-inorganic cation, by methylamino organic cation and K inorganic cations
Common hydridization BiI3 is obtained.
The preparation method of the common hydridization perovskite material of the unleaded organic-inorganic cation and its thin film, including following step
Suddenly：
S1. by BiI3, iodine methylamine, KI stoichiometrically 1:2:The mixing of 1 proportioning is ground 15 minutes in being put into mortar, obtains dark brown
The common hydridization perovskite material of the unleaded organic-inorganic cation of color；
S2. the perovskite material that step S1 is obtained is put in mould compressing under 55MPa pressure, then vacuum sealing is
Obtain perovskite target；
S3. the perovskite target for step S2 being obtained is put in vacuum magnetic-control sputtering platform, is evacuated to 10-5Pa, is filled with argon extremely
0.65Pa, opening radio-frequency power supply carries out magnetron sputtering, and film thickness is deflated after reaching 550nm and taken out, and obtains unleaded organic-inorganic
The common hydridization perovskite thin film of cation.
Embodiment 4
The common hydridization perovskite material of a kind of unleaded organic-inorganic cation, by ethylamino organic cation and Rb inorganic cations
Common hydridization BiI3 is obtained.
The preparation method of the common hydridization perovskite material of the unleaded organic-inorganic cation and its thin film, including following step
Suddenly：
S1. by BiI3, iodine ethamine, RbI stoichiometrically 1:2:The mixing of 1 proportioning is ground 15 minutes in being put into mortar, obtains palm fibre
The common hydridization perovskite material of the unleaded organic-inorganic cation of black；
S2. the perovskite material that step S1 is obtained is put in mould compressing under 55MPa pressure, then vacuum sealing is
Obtain perovskite target；
S3. the perovskite target for step S2 being obtained is put in vacuum magnetic-control sputtering platform, is evacuated to 10-5Pa, is filled with argon extremely
0.65Pa, opening radio-frequency power supply carries out magnetron sputtering, and film thickness is deflated after reaching 550nm and taken out, and obtains unleaded organic-inorganic
The common hydridization perovskite thin film of cation.
Embodiment 5
The common hydridization perovskite material of a kind of unleaded organic-inorganic cation, by ethylamino organic cation and Cs inorganic cations
Common hydridization BiI3 is obtained.
The preparation method of the common hydridization perovskite material of the unleaded organic-inorganic cation and its thin film, including following step
Suddenly：
S1. by BiI3, iodine ethamine, CsI stoichiometrically 1:2:The mixing of 1 proportioning is ground 15 minutes in being put into mortar, obtains palm fibre
The common hydridization perovskite material of the unleaded organic-inorganic cation of black；
S2. the perovskite material that step S1 is obtained is put in mould compressing under 55MPa pressure, then vacuum sealing is
Obtain perovskite target；
S3. the perovskite target for step S2 being obtained is put in vacuum magnetic-control sputtering platform, is evacuated to 10-5Pa, is filled with argon extremely
0.65Pa, opening radio-frequency power supply carries out magnetron sputtering, and film thickness is deflated after reaching 550nm and taken out, and obtains unleaded organic-inorganic
The common hydridization perovskite thin film of cation.
Embodiment 6
The common hydridization perovskite material of a kind of unleaded organic-inorganic cation, by ethylamino organic cation and K inorganic cations
Common hydridization BiI3 is obtained.
The preparation method of the common hydridization perovskite material of the unleaded organic-inorganic cation and its thin film, including following step
Suddenly：
S1. by BiI3, iodine ethamine, KI stoichiometrically 1:2:The mixing of 1 proportioning is ground 15 minutes in being put into mortar, obtains dark brown
The common hydridization perovskite material of the unleaded organic-inorganic cation of color；
S2. the perovskite material that step S1 is obtained is put in mould compressing under 55MPa pressure, then vacuum sealing is
Obtain perovskite target；
S3. the perovskite target for step S2 being obtained is put in vacuum magnetic-control sputtering platform, is evacuated to 10-5Pa, is filled with argon extremely
0.65Pa, opening radio-frequency power supply carries out magnetron sputtering, and film thickness is deflated after reaching 550nm and taken out, and obtains unleaded organic-inorganic
The common hydridization perovskite thin film of cation.
Embodiment 7
The present embodiment with the difference of embodiment 1 is, in preparation process S1, BiI3, iodine methylamine, RbI mixed grindings be after 15 minutes,
200 DEG C are heated in being put into water heating kettle, cooling is taken out, obtain crystallizing the perfect common hydridization of the unleaded organic-inorganic cation of black
Perovskite material, other are with embodiment 1.
Embodiment 8
The present embodiment with the difference of embodiment 7 is, in preparation process S1, is heated to 100 DEG C of coolings and takes out in water heating kettle, its
He is with embodiment 7.
Embodiment 9
The present embodiment with the difference of embodiment 7 is, in preparation process S1, is heated to 300 DEG C of coolings and takes out in water heating kettle, its
He is with embodiment 7.
Embodiment 10
The present embodiment with the difference of embodiment 1 is, in preparation process S1, BiI3, iodine methylamine, RbI mixed grindings be after 15 minutes,
350 DEG C are heated in being put into the heating furnace of argon protection, cooling is taken out, and obtains the common hydridization calcium titanium of unleaded organic-inorganic cation
Pit wood material.
Embodiment 11
The present embodiment with the difference of embodiment 10 is, in preparation process S1, is heated to 100 DEG C in the heating furnace of argon protection
Cooling is taken out, and other are with embodiment 10.
Embodiment 12
The present embodiment with the difference of embodiment 11 is, in preparation process S1, is heated to 600 DEG C in the heating furnace of argon protection
Cooling is taken out, and other are with embodiment 10.
Embodiment 13
The present embodiment with the difference of embodiment 2 is, in preparation process S1, before BiI3, iodine methylamine, CsI grindings adds DMF to make
For abrasive media, dried after grinding 15 minutes, obtained the common hydridization perovskite material of unleaded organic-inorganic cation.
Embodiment 14
It is isopropanol that the present embodiment and the difference of embodiment 13 are the abrasive media added in preparation process S1, and other are with real
Apply example 13.
Embodiment 15
It is dehydrated alcohol that the present embodiment and the difference of embodiment 13 are the abrasive media added in preparation process S1, and other are same
Embodiment 13.
Embodiment 16
The common hydridization perovskite material of a kind of unleaded organic-inorganic cation, by ethylamino organic cation and K inorganic cations
Common hydridization BiI3 is obtained.
The preparation method of the common hydridization perovskite material of the unleaded organic-inorganic cation and its thin film, including following step
Suddenly：
S1. by BiI3, iodine ethamine, KI stoichiometrically 1:1.9:The mixing of 0.9 proportioning is ground 15 minutes in being put into mortar, is obtained
The common hydridization perovskite material of the unleaded organic-inorganic cation of brownish black；
S2. the perovskite material that step S1 is obtained is put in mould compressing under 10MPa pressure, then vacuum sealing is
Obtain perovskite target；
S3. the perovskite target for step S2 being obtained is put in vacuum magnetic-control sputtering platform, is evacuated to 10-5Pa, is filled with argon extremely
0.6Pa, opening radio-frequency power supply carries out magnetron sputtering, and film thickness is deflated after reaching 100nm and taken out, and obtains unleaded organic-inorganic sun
The common hydridization perovskite thin film of ion.
Embodiment 17
The common hydridization perovskite material of a kind of unleaded organic-inorganic cation, by ethylamino organic cation and K inorganic cations
Common hydridization BiI3 is obtained.
The preparation method of the common hydridization perovskite material of the unleaded organic-inorganic cation and its thin film, including following step
Suddenly：
S1. by BiI3, iodine ethamine, KI stoichiometrically 1:2.1:The mixing of 1.1 proportionings is ground 15 minutes in being put into mortar, is obtained
The common hydridization perovskite material of the unleaded organic-inorganic cation of brownish black；
S2., the perovskite material that step S1 is obtained is put in mould compressing under 100MPa pressure, then vacuum sealing
Obtain final product perovskite target；
S3. the perovskite target for step S2 being obtained is put in vacuum magnetic-control sputtering platform, is evacuated to 10-5Pa, is filled with argon extremely
0.7Pa, opening radio-frequency power supply carries out magnetron sputtering, and film thickness is deflated after reaching 1000nm and taken out, and obtains unleaded organic-inorganic
The common hydridization perovskite thin film of cation.
Embodiment 17
The common hydridization perovskite material of a kind of unleaded organic-inorganic cation, by ethylamino organic cation and K inorganic cations
Common hydridization BiI3 is obtained.
The preparation method of the common hydridization perovskite material of the unleaded organic-inorganic cation and its thin film, including following step
Suddenly：
S1. by BiI3, iodine ethamine, KI stoichiometrically 1:1.8:The mixing of 0.8 proportioning is ground 15 minutes in being put into mortar, is obtained
The common hydridization perovskite material of the unleaded organic-inorganic cation of brownish black；
S2. the perovskite material that step S1 is obtained is put in mould compressing under 5MPa pressure, then vacuum sealing is
Obtain perovskite target；
S3. the perovskite target for step S2 being obtained is put in vacuum magnetic-control sputtering platform, is evacuated to 10-4Pa, is filled with argon extremely
0.5Pa, opening radio-frequency power supply carries out magnetron sputtering, and film thickness is deflated after reaching 50nm and taken out, and obtains unleaded organic-inorganic sun
The common hydridization perovskite thin film of ion.
Embodiment 18
The common hydridization perovskite material of a kind of unleaded organic-inorganic cation, by ethylamino organic cation and K inorganic cations
Common hydridization BiI3 is obtained.
The preparation method of the common hydridization perovskite material of the unleaded organic-inorganic cation and its thin film, including following step
Suddenly：
S1. by BiI3, iodine ethamine, KI stoichiometrically 1:2.2:The mixing of 1.2 proportionings is ground 15 minutes in being put into mortar, is obtained
The common hydridization perovskite material of the unleaded organic-inorganic cation of brownish black；
S2., the perovskite material that step S1 is obtained is put in mould compressing under 150MPa pressure, then vacuum sealing
Obtain final product perovskite target；
S3. the perovskite target for step S2 being obtained is put in vacuum magnetic-control sputtering platform, is evacuated to 10-6Pa, is filled with argon extremely
0.8Pa, opening radio-frequency power supply carries out magnetron sputtering, and film thickness is deflated after reaching 1500nm and taken out, and obtains unleaded organic-inorganic
The common hydridization perovskite thin film of cation.
Test method
Obtained in Example 1 ~ 18, perovskite material does X-ray diffraction respectively, obtains X-ray diffraction as shown in drawings
Figure, the figure are basically identical with the X-ray diffractogram of traditional leaded perovskite material, show to replace Pb to become perovskite material with Bi
The central ion of material, is obtained using common hydridization BiI3 of inorganic cation such as the organic cations such as methylamino or ethylamino and Rb or Cs
The common hydridization perovskite material of unleaded organic-inorganic cation is feasible, therefore can be prepared using the formula unleaded organic
The common hydridization perovskite material of inorganic cation and can be prepared using polishing, the perovskite material compacting for preparing
Into perovskite target as the target of magnetron sputtering, the unleaded organic-inorganic sun of large-area high-quality is obtained by magnetron sputtering method
The common hydridization perovskite thin film of ion.
Claims (10)
1. a kind of common hydridization perovskite material of unleaded organic-inorganic cation, it is characterised in that the unleaded organic-inorganic sun
The common hydridization perovskite material of ion is jointly miscellaneous by inorganic cations such as the organic cations such as methylamino or ethylamino and Rb or Cs
Change BiI3 to obtain.
2. the side of a kind of common hydridization perovskite material of unleaded organic-inorganic cation prepared described in claim 1 and its thin film
Method, it is characterised in that comprise the steps：
S1. by BiI3, iodine methylamine or iodine ethamine, RbI or CsI or KI stoichiometrically 1:1.8~2.2:0.8 ~ 1.2 proportioning is mixed
Grinding 15 minutes is closed, the common hydridization perovskite material of unleaded organic-inorganic cation is obtained；
S2. the perovskite material that step S1 is obtained is put in mould and perovskite target material is pressed under 5 ~ 150MPa pressure；
S3. the perovskite target for step S2 being obtained is put into vacuum magnetic-control sputtering platform and carries out magnetron sputtering, and film thickness reaches 50 ~
Deflate after 1500nm, obtain the common hydridization perovskite thin film of unleaded organic-inorganic cation.
3. the preparation side of the common hydridization perovskite material of unleaded organic-inorganic cation according to claim 2 and its thin film
Method, it is characterised in that in step S1, adds DMF or isopropyl before BiI3, iodine methylamine or iodine ethamine, RbI or CsI or KI grindings
Alcohol or other alcohols, are dried after grinding, obtain the common hydridization perovskite material of unleaded organic-inorganic cation.
4. the preparation side of the common hydridization perovskite material of unleaded organic-inorganic cation according to claim 2 and its thin film
Method, it is characterised in that in step S1, after BiI3, iodine methylamine or iodine ethamine, RbI or CsI or KI mixed grindings, it is heated to 100 ~
300 DEG C, cooling is taken out, and obtains the common hydridization perovskite material of unleaded organic-inorganic cation.
5. the preparation side of the common hydridization perovskite material of unleaded organic-inorganic cation according to claim 2 and its thin film
Method, it is characterised in that in step S1, after BiI3, iodine methylamine or iodine ethamine, RbI or CsI or KI mixed grindings, protects in argon
Under be heated to 100 ~ 600 DEG C, cooling take out, obtain the common hydridization perovskite material of unleaded organic-inorganic cation.
6. the common hydridization perovskite material of unleaded organic-inorganic cation and its thin film according to any one of claim 2 ~ 5
Preparation method, it is characterised in that in step S1, BiI3, iodine methylamine or iodine ethamine, RbI or CsI or KI stoichiometrically 1:
1:1 proportioning.
7. the preparation side of the common hydridization perovskite material of unleaded organic-inorganic cation according to claim 2 and its thin film
Method, it is characterised in that in step S2, carries out vacuum sealing after perovskite material compacting and obtains perovskite target.
8. the system of the common hydridization perovskite material of unleaded organic-inorganic cation and its thin film according to claim 2 or 7
Preparation Method, it is characterised in that in step S2, the perovskite material are suppressed under 10 ~ 100MPa pressure.
9. the preparation side of the common hydridization perovskite material of unleaded organic-inorganic cation according to claim 2 and its thin film
Vacuum magnetic-control sputtering platform is evacuated to 10 before carrying out magnetron sputtering by method, it is characterised in that in step S3-4~10-6Pa is filled with argon
Gas is to 0.5 ~ 0.8Pa.
10. the system of the common hydridization perovskite material of unleaded organic-inorganic cation and its thin film according to claim 2 or 9
Preparation Method, it is characterised in that in step S3, Magnetron Sputtering Thin Film are deflated after reaching 100 ~ 1000nm and are taken out.
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| CN109369725A (en) * | 2018-09-20 | 2019-02-22 | 西安交通大学 | A kind of unleaded hydridization two dimension double perovskite materials and preparation method |
| CN109755393A (en) * | 2019-01-16 | 2019-05-14 | 济南大学 | A kind of solwution method preparation and application of antimony iodine hydridization perovskite |
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| CN110828588A (en) * | 2019-11-07 | 2020-02-21 | 宁波大学科学技术学院 | Carbon-based bismuth bromide modified perovskite solar cell and preparation method thereof |
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| CN114262338A (en) * | 2021-12-14 | 2022-04-01 | 中山复元新材料科技有限责任公司 | Lead-free hybrid semiconductor material, preparation method and photoelectric detector |
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