CN106601579A - Upper electrode mechanism and semiconductor processing device - Google Patents
Upper electrode mechanism and semiconductor processing device Download PDFInfo
- Publication number
- CN106601579A CN106601579A CN201510679475.2A CN201510679475A CN106601579A CN 106601579 A CN106601579 A CN 106601579A CN 201510679475 A CN201510679475 A CN 201510679475A CN 106601579 A CN106601579 A CN 106601579A
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- Prior art keywords
- coil
- electrode mechanism
- adapter
- top electrode
- base plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
Abstract
The invention provides an upper electrode mechanism and a semiconductor processing device. The upper electrode mechanism includes a coil and an adapter arranged at the top of a reaction cavity and a coil shielding assembly, wherein the coil is electrically connected with the adapter via a coil connector. The coil shielding assembly is used to isolate the horizontal interference electric field generated at the connection part of the adapter and the coil connector from the vertical electric field generated by the coil. The upper electrode mechanism can prevent the interference of the horizontal interference electric field generated at the connection part of the adapter and the coil connector to the vertical electric field generated by the coil, so that the distribution uniformity of the plasma can be ensured.
Description
Technical field
The present invention relates to microelectronics technology, in particular it relates to a kind of Top electrode mechanism and
Semiconductor processing equipment.
Background technology
In MEMS etching apparatus, radio-frequency coil is generally provided with the top of reaction chamber,
The radio-frequency coil is connected by adapter with radio-frequency power supply, to the technique of provocative reaction within the chamber
Gas forms plasma.
Fig. 1 is a kind of sectional view of existing etching apparatus.As shown in figure 1, etching apparatus
Including reaction chamber 11, coil 12, adapter 13 and radio-frequency power supply (not shown).
Wherein, bottom electrode 16 is provided with reaction chamber 11, for bearing wafer；Coil 12
Using helicoidal structure, it is fixed on the top of reaction chamber 11 using coil brace 15, and
And the input and outfan of coil 12 is electrically connected by coil connection strap 14 with adapter 13,
Adapter 13 is electrically connected with radio-frequency power supply.After radio-frequency power supply is powered, radio-frequency power supply passes through
Adapter 13 to coil 12 loads alternating voltage, and the alternating magnetic field produced by coil 12 is excited
Process gas in reaction chamber 11 produces plasma and performs etching.
Above-mentioned etching apparatus is inevitably present in actual applications problems with：
By theory analysis and the proof of many experiments, adapter 13 and coil connection strap 14
Junction can produce horizontal disturbance electric field parallel to the place plane of coil 12, the horizon bar
Disturbing electric field can directly affect the vertical electric field produced by coil 12, destroy the distribution of plasma
Uniformity, so as to cause etching homogeneity to reduce, affects process results, interference region such as Fig. 1
In the I regions that illustrate.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, it is proposed that
A kind of Top electrode mechanism and semiconductor processing equipment, it can avoid being connected with coil in adapter
The horizontal disturbance electric field that the junction of part produces is disturbed the vertical electric field produced by coil,
Thereby may be ensured that the distributing homogeneity of plasma.
A kind of Top electrode mechanism is provided to realize the purpose of the present invention, including being arranged on reaction
The coil and adapter of chamber roof, the coil is by coil connector and adapter electricity
Connection, also including coil shield assembly, for will be in the adapter and the coil connector
Junction produce horizontal disturbance electric field isolate with the vertical electric field produced by the coil.
Preferably, the coil shield assembly includes closed shielding box, and the shielding box is adopted
Make of metal material；The outfan of the adapter extends to the inside of the shielding box；Institute
The one end for stating coil connector is connected with the coil, the other end of the coil connector and institute
State the outfan connection of adapter.
Preferably, the shielding box be by least four side plates, top board and base plate constitute it is many
Face body, is provided with each side plate and each side plate interface respectively with top board and base plate
First Line ring recess, and the first shielded coil is provided with the First Line ring recess, to realize
Each side plate and each side plate electromagnetic shielding respectively between top board and base plate.
Preferably, the shielding box is the cylinder being made up of annular slab, top board and base plate,
The annular slab is provided with First Line ring recess with the interface of the top board and base plate respectively, and
The first shielded coil is provided with the First Line ring recess, to realize the annular slab difference
With the electromagnetic shielding between the top board and base plate.
Preferably, first through hole, the outfan of the adapter are provided with the top board
The inside of the shielding box is stretched into by the first through hole；Also, on the top board, and
It is looped around around the first through hole and is provided with the second coil groove, and in second coil
Secondary shielding coil is provided with groove, to realize the electricity between the adapter and the top board
Magnetic shield.
Preferably, the coil connector includes coil adaptor, insulating fixing piece and matching
Device connector, wherein, one end of the coil adaptor is connected with the coil, the coil
The other end of adaptor passes through the base plate, and is matched with described by the adapter connector
The outfan connection of device；The insulating fixing piece is described for the coil adaptor to be fixed on
On base plate, and the coil adaptor and the base plate are electrically insulated.
Preferably, the metal material includes aluminium sheet, and the surface of the aluminium sheet through conductive
Oxidation is formed with oxide layer.
Preferably, the Top electrode mechanism also include being arranged on reaction chamber top and
Closed coil box, and gripper shoe is provided with the coil box, the gripper shoe is by institute
The inside division for stating coil box forms upper space and lower space；The coil shield assembly sets
Put in the gripper shoe, and in the upper space；The adapter is arranged on described
The top of coil shield assembly, and in the upper space；The coil is arranged on described
In lower space.
Preferably, the Top electrode mechanism also includes coil brace, for the coil to be consolidated
It is scheduled on the top of the reaction chamber；The coil brace includes horizontally disposed fixed plate and use
In the annular support member for supporting the fixed plate, the fixed plate, annular support member and described anti-
Closing space is formed on the top for answering chamber, and the coil is located in the closing space, and fixed
On the lower surface of the fixed plate.
Used as another technical scheme, the present invention also provides a kind of semiconductor processing equipment, wraps
Reaction chamber, Top electrode mechanism and bottom electrode mechanism are included, the Top electrode mechanism is arranged on described
The top of reaction chamber；The bottom electrode mechanism is arranged on the inside of the reaction chamber, described
The above-mentioned Top electrode mechanism that Top electrode mechanism is provided using the present invention.
The invention has the advantages that：
The Top electrode mechanism that the present invention is provided, it passes through to arrange coil shield assembly, can be by
Produce in the horizontal disturbance electric field of the junction generation of adapter and coil connector and by coil
Vertical electric field isolation, such that it is able to avoid the horizontal disturbance electric field vertical to what is produced by coil
Electric field is disturbed, and then can ensure that the distributing homogeneity of plasma.
The semiconductor processing equipment that the present invention is provided, it passes through using the above-mentioned of present invention offer
Top electrode mechanism, can avoid vertical electric field of the horizontal disturbance electric field to being produced by coil from carrying out
Interference, thereby may be ensured that the distributing homogeneity of plasma.
Description of the drawings
Fig. 1 is a kind of sectional view of existing etching apparatus；
Fig. 2 is the installation diagram of Top electrode mechanism provided in an embodiment of the present invention；
Fig. 3 A are the sectional view of Top electrode mechanism provided in an embodiment of the present invention；
Fig. 3 B are the enlarged drawing in II regions in Fig. 3 A；And
Fig. 3 C are the enlarged drawing in III regions in Fig. 3 A.
Specific embodiment
To make those skilled in the art more fully understand technical scheme, tie below
The Top electrode mechanism and semiconductor processing equipment for closing accompanying drawing to provide the present invention is retouched in detail
State.
Fig. 2 is the installation diagram of Top electrode mechanism provided in an embodiment of the present invention.Refer to Fig. 2,
Bottom electrode 33 is provided with reaction chamber 32, and is provided with the top of reaction chamber 32
Flat medium window 30 (is made) using the insulant of ceramics or quartz etc., and on
Electrode mechanism is arranged on the top of medium window 30, for presenting radio-frequency power through medium window 30
Enter the inside of reaction chamber 32.
In the present embodiment, Top electrode mechanism includes the shielding of coil 29, adapter 21 and coil
Component.Wherein, coil 29 is fixed on the top of medium window 30, the line by coil brace 28
Coil support 28 includes horizontally disposed fixed plate and the annular support member for supporting the fixed plate
31, fixed plate, annular support member 31 and medium window 30 form closing space, coil 29
In the closing space, and it is fixed on the lower surface of fixed plate.Certainly, in actual applications,
Other any-mode fixed coils can also be adopted, and the structure of coil is different, fixed coil
Mode is also different.
And, coil 29 is electrically connected by coil connector with adapter 21, the adapter
21 electrically connect with radio-frequency power supply (not shown), and radio-frequency power supply is used to pass through the adapter
21 to coil 29 loads radio-frequency (RF) energy, so that coil 29 can be in provocative reaction chamber 32
Reacting gas forms plasma.Coil shield assembly is used to connect in adapter 21 and coil
The horizontal disturbance electric field that the junction of fitting produces and the vertical electric field produced by coil 29 every
From such that it is able to avoid the horizontal disturbance electric field from doing the vertical electric field produced by coil
Disturb, and then can ensure that the distributing homogeneity of plasma.
Fig. 3 A are the sectional view of Top electrode mechanism provided in an embodiment of the present invention.Fig. 3 B are figure
The enlarged drawing in II regions in 3A.Fig. 3 C are the enlarged drawing in III regions in Fig. 3 A.Please in the lump
Refering to Fig. 3 A-3C, in the present embodiment, coil shield assembly includes closed shielding box 23,
The shielding box 23 is made using metal material, to realize the effect of radio shielding.Preferably,
Above-mentioned metal material includes aluminium sheet, the surface of the aluminium sheet through electric conductive oxidation, and in surface of aluminum plate
The oxide layer that can fully completely cut off with its space outerpace is formed with, so that shielding box 23 is effectively sealed,
Such that it is able to avoid radio frequency from revealing, etching result is affected.
The shielding box 23 is six be made up of four side plates 232, top board 231 and base plate 233
Face body, each side plate 232 and each side plate 232 respectively with top board 231 and base plate 233
Interface on be provided with First Line ring recess, and be provided with the first shielding in the First Line ring recess
Coil 34, to realize each side plate 232 and each side plate 232 respectively with top board 231
And the electromagnetic shielding between base plate 233, as shown in Figure 3 B.
Top electrode mechanism also includes being arranged on the top of reaction chamber 23 and closed coil box
26, and be provided with gripper shoe 27 in the coil box 26, the gripper shoe 27 is by coil box
26 inside division forms upper space and lower space.In upper space, above-mentioned shielding
Box 23 is arranged in gripper shoe 27；Adapter 21 is arranged on the top of shielding box 23.Coil
26 are arranged in lower space.
In the present embodiment, as shown in Figure 3 C, first through hole is provided with top board 231,
The outfan 211 of adapter 21 stretches into the inside of shielding box 23 by the first through hole；Also,
On top board 231, and it is looped around around first through hole and is provided with the second coil groove, and
Secondary shielding coil 35 is provided with the second coil groove, to realize adapter 21 and top board
Electromagnetic shielding between 231.
And, the outfan of adapter 21 extends to the inside of shielding box 23.Coil connects
One end of part is connected with coil 29, the other end of coil connector and the outfan of adapter 21
Connection, because the outfan of adapter 21 is located at the inside of shielding box 23, thus coil connects
The other end of part is located at the inside of shielding box 23 with the junction of the outfan of adapter 21, from
And the horizontal disturbance electricity that can realize producing in the junction of adapter 21 and coil connector
Field isolates with the vertical electric field produced by coil 29.
In the present embodiment, above-mentioned coil connector includes that coil adaptor 25, insulation are fixed
Part 24 and adapter connector 22.Wherein, as shown in Figure 3A, coil adaptor 25 is by
One adaptor 251 and the second adaptor 252 are constituted, the lower end of the second adaptor 252 and coil
29 connections, the upper end of the second adaptor 252 is connected with the lower end of the first adaptor 251, the
The upper end of one adaptor 251 pass through base plate 233, and by adapter connector 22 with match
The outfan 211 of device 21 connects；Insulating fixing piece 24 is used to fix the second adaptor 252
On base plate 233, and the second adaptor 252 and base plate 233 are electrically insulated, so as to realize two
The radio frequency isolation of person.In actual applications, insulating fixing piece 24 can adopt arbitrary structures,
As long as the radio frequency isolation of the second adaptor 252 and base plate 233 can be realized.
It should be noted that in the present embodiment, coil adaptor 25 is by the first adaptor 251
Constitute with the second adaptor 252, but the invention is not limited in this, in actual applications,
Coil adaptor 25 can also adopt other arbitrary structures, if base plate can be passed through, and will
Coil links together with the outfan of adapter.In addition, in actual applications, matching
The outfan 211 of device 21 is two, and coil 29 is generally by completely identical in structure two points
Body docking is formed, and each split has two connection ends, and two splits have altogether four connection ends,
In this case it is necessary to four coil adaptors 25 and two adapter connectors 22 are set,
Wherein, one end of four coil adaptors 25 is connected correspondingly with four connection ends；Two
Individual adapter connector 22 is connected respectively with two outfans 211 of adapter 21.Also,
In four coil adaptors 25, the other end of two of which coil adaptor 25 is by matching
Device connector 22 is connected with one of outfan 211 of adapter 21 simultaneously, other two
The other end of coil adaptor 25 by adapter connector 22 simultaneously with adapter 21 its
In another outfan 211 connect.In addition, in actual applications, adapter connector 22
Arbitrary structures can be adopted, as long as can realize coil adaptor 25 is defeated with adapter 21
Go out the electrical connection at end.
Also, it should be noted that in the present embodiment, shielding box 23 be by four side plates 232,
The hexahedron of top board 231 and the composition of base plate 233, but this is the invention is not limited in, in reality
In the application of border, shielding box can also be pentahedron or heptahedron etc., i.e. shielding box can be with
It is the side plate and the polyhedron that constitutes of top board and base plate by five or more than six.
Explanation is needed further exist for, in actual applications, shielding box can also be cylinder,
The cylinder can be made up of annular slab, top board and base plate.With the shielding box of above-mentioned polyhedral structure
It is similar, in order to realize the electromagnetic shielding between each plate, annular slab respectively with top board and
First Line ring recess is provided with the interface of base plate, and the first screen is provided with First Line ring recess
Coil is covered, to realize electromagnetic shielding of the annular slab respectively between top board and base plate.Certainly,
In actual applications, shielding box can also adopt other arbitrary structures, as long as it can realize penetrating
The effect of frequency shielding.
In sum, Top electrode mechanism provided in an embodiment of the present invention, it passes through to arrange coil
Shield assembly, can be by the horizontal disturbance electricity produced in the junction of adapter and coil connector
Isolate with the vertical electric field produced by coil, such that it is able to avoid the horizontal disturbance electric field to by
The vertical electric field that coil is produced is disturbed, and then can ensure that being evenly distributed for plasma
Property.
Used as another technical scheme, the embodiment of the present invention also provides a kind of semiconductor machining and sets
It is standby, including reaction chamber, bottom electrode mechanism and Top electrode mechanism.Wherein, Top electrode mechanism sets
Put at the top of reaction chamber, the Top electrode mechanism employs the above embodiment of the present invention offer
Top electrode mechanism；Bottom electrode mechanism is arranged on the inside of reaction chamber.
Semiconductor processing equipment provided in an embodiment of the present invention, it passes through using present invention enforcement
The above-mentioned Top electrode mechanism that example is provided, can avoid the horizontal disturbance electric field to being produced by coil
Vertical electric field is disturbed, and thereby may be ensured that the distributing homogeneity of plasma.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and
Using illustrative embodiments, but the invention is not limited in this.For in the art
For those of ordinary skill, without departing from the spirit and substance in the present invention, can do
Go out various modifications and improvement, these modifications and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a kind of Top electrode mechanism, including the coil and adapter that are arranged at the top of reaction chamber,
The coil is electrically connected by coil connector with the adapter, it is characterised in that also included
Coil shield assembly, for will produce with the junction of the coil connector in the adapter
Horizontal disturbance electric field isolate with the vertical electric field produced by the coil.
2. Top electrode mechanism according to claim 1, it is characterised in that the coil
Shield assembly includes closed shielding box, and the shielding box is made using metal material；
The outfan of the adapter extends to the inside of the shielding box；
One end of the coil connector is connected with the coil, the coil connector it is another
One end is connected with the outfan of the adapter.
3. Top electrode mechanism according to claim 2, it is characterised in that the shielding
Box is the polyhedron being made up of at least four side plates, top board and base plate, in each side plate and respectively
Individual side plate is provided with First Line ring recess with the interface of top board and base plate respectively, and described
The first shielded coil is provided with one coil groove, to realize each side plate and each side plate point
Electromagnetic shielding not between top board and base plate.
4. Top electrode mechanism according to claim 2, it is characterised in that the shielding
Box is the cylinder being made up of annular slab, top board and base plate, the annular slab respectively with the top
First Line ring recess is provided with the interface of plate and base plate, and is arranged in the First Line ring recess
There is the first shielded coil, to realize the annular slab respectively between the top board and base plate
Electromagnetic shielding.
5. the Top electrode mechanism according to claim 3 or 4, it is characterised in that in institute
State and be provided with top board first through hole, the outfan of the adapter is stretched by the first through hole
Enter the inside of the shielding box；Also, on the top board, and it is looped around the first through hole
Around be provided with the second coil groove, and be provided with secondary shielding in the second coil groove
Coil, to realize the electromagnetic shielding between the adapter and the top board.
6. the Top electrode mechanism according to claim 3 or 4, it is characterised in that described
Coil connector includes coil adaptor, insulating fixing piece and adapter connector, wherein,
One end of the coil adaptor is connected with the coil, the coil adaptor it is another
One end passes through the base plate, and the outfan for passing through the adapter connector and the adapter
Connection；
The insulating fixing piece is used to for the coil adaptor to be fixed on the base plate, and
The coil adaptor and the base plate are electrically insulated.
7. Top electrode mechanism according to claim 2, it is characterised in that the metal
Material includes aluminium sheet, and the surface of the aluminium sheet is formed with oxide layer through electric conductive oxidation.
8. the Top electrode mechanism according to claim 1-7 any one, it is characterised in that
The Top electrode mechanism also includes being arranged on the reaction chamber top and closed coil box,
And it is provided with gripper shoe in the coil box, the gripper shoe is by the inside of the coil box
Segmentation forms upper space and lower space；
The coil shield assembly is arranged in the gripper shoe, and positioned at the upper space
It is interior；
The adapter is arranged on the top of the coil shield assembly, and positioned at the top
In space；
The coil is arranged in the lower space.
9. the Top electrode mechanism according to claim 1-7 any one, it is characterised in that
The Top electrode mechanism also includes coil brace, for the coil to be fixed on into the reaction chamber
The top of room；
The coil brace includes horizontally disposed fixed plate and for supporting the fixed plate
Envelope is formed on annular support member, the top of the fixed plate, annular support member and the reaction chamber
Space is closed, the coil is located in the closing space, and is fixed on the following table of the fixed plate
On face.
10. a kind of semiconductor processing equipment, including reaction chamber, Top electrode mechanism and bottom electrode
Mechanism, the Top electrode mechanism is arranged on the top of the reaction chamber；The bottom electrode mechanism
It is arranged on the inside of the reaction chamber, it is characterised in that the Top electrode mechanism adopts right
Require the Top electrode mechanism described in 1-9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510679475.2A CN106601579B (en) | 2015-10-19 | 2015-10-19 | Top electrode mechanism and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510679475.2A CN106601579B (en) | 2015-10-19 | 2015-10-19 | Top electrode mechanism and semiconductor processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106601579A true CN106601579A (en) | 2017-04-26 |
| CN106601579B CN106601579B (en) | 2019-02-19 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510679475.2A Active CN106601579B (en) | 2015-10-19 | 2015-10-19 | Top electrode mechanism and semiconductor processing equipment |
Country Status (1)
| Country | Link |
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| CN (1) | CN106601579B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109494170A (en) * | 2017-09-12 | 2019-03-19 | 北京北方华创微电子装备有限公司 | Top electrode mechanism and semiconductor processing equipment |
| CN114121581A (en) * | 2020-08-27 | 2022-03-01 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
| CN114171360A (en) * | 2021-12-07 | 2022-03-11 | 北京北方华创微电子装备有限公司 | Upper electrode device and process chamber |
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| CN114121581B (en) * | 2020-08-27 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
| CN114171360A (en) * | 2021-12-07 | 2022-03-11 | 北京北方华创微电子装备有限公司 | Upper electrode device and process chamber |
| CN114171360B (en) * | 2021-12-07 | 2023-11-14 | 北京北方华创微电子装备有限公司 | Upper electrode device and process chamber |
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| Publication number | Publication date |
|---|---|
| CN106601579B (en) | 2019-02-19 |
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