CN106575855A - 一种垂直腔面发射激光器vcsel - Google Patents

一种垂直腔面发射激光器vcsel Download PDF

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CN106575855A
CN106575855A CN201480080564.9A CN201480080564A CN106575855A CN 106575855 A CN106575855 A CN 106575855A CN 201480080564 A CN201480080564 A CN 201480080564A CN 106575855 A CN106575855 A CN 106575855A
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distributed bragg
bragg reflector
reflector mirror
type doping
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CN106575855B (zh
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吴波
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

一种垂直腔面发射激光器VCSEL，VCSEL包括自下而上的外延层结构，且自下而上的外延层结构中的一组p型掺杂的分布式布拉格反射镜形成了双氧化层谐振泄漏腔以便在VCSEL发生激射时使LP11激射模式下的光能集中在双氧化层谐振泄漏腔内且降低LP11激射模式下的增益，从而保证了LP01激射模式为VCSEL的主激射模式，且自下而上的外延层结构中的吸收层用于形成环形栅栏，环形栅栏用于吸收LP11激射模式下的光能，从而保证了LP01激射模式下的输出光功率。可见，实施例中的VCSEL制备工艺简单、可靠性高且提高了输出光功率。

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PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN201480080564.9A 2014-07-15 2014-07-15 一种垂直腔面发射激光器vcsel Active CN106575855B (zh)

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PCT/CN2014/082201 WO2016008083A1 (zh) 2014-07-15 2014-07-15 一种垂直腔面发射激光器vcsel

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109038217A (zh) * 2018-10-31 2018-12-18 厦门乾照半导体科技有限公司 延长使用寿命的vcsel芯片及制作方法和电子器件
CN110495061A (zh) * 2018-02-06 2019-11-22 华为技术有限公司 一种垂直腔面发射激光器
CN111129952A (zh) * 2019-12-25 2020-05-08 长春理工大学 非对称环形结构上分布布拉格反射镜垂直腔面发射半导体激光器
CN114552380A (zh) * 2020-11-25 2022-05-27 上海禾赛科技有限公司 谐振腔、激光单元及芯片和激光器及形成方法、激光雷达

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11456575B2 (en) 2017-08-28 2022-09-27 Lumentum Operations Llc Distributed oxide lens for beam shaping
US11088508B2 (en) * 2017-08-28 2021-08-10 Lumentum Operations Llc Controlling beam divergence in a vertical-cavity surface-emitting laser

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1092210A (zh) * 1993-09-28 1994-09-14 吉林大学 钨丝做掩膜二次质子轰击垂直腔面发射激光器
CN1198265A (zh) * 1995-09-29 1998-11-04 英国电讯公司 光学谐振结构
US20010050934A1 (en) * 2000-05-31 2001-12-13 Choquette Kent D. Long wavelength vertical cavity surface emitting laser
CN1395344A (zh) * 2001-07-03 2003-02-05 扎尔林克半导体有限公司 利用一非对称光限制孔控制偏振的vcsels
US20090296754A1 (en) * 2006-06-16 2009-12-03 Vi Systems Gmbh Optoelectric Device for High-Speed Data Transfer with Electrooptically Tunable Stopband Edge of a Bragg-Reflector
CN101667715A (zh) * 2008-09-03 2010-03-10 中国科学院半导体研究所 一种单模高功率垂直腔面发射激光器及其制作方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1092210A (zh) * 1993-09-28 1994-09-14 吉林大学 钨丝做掩膜二次质子轰击垂直腔面发射激光器
CN1198265A (zh) * 1995-09-29 1998-11-04 英国电讯公司 光学谐振结构
US20010050934A1 (en) * 2000-05-31 2001-12-13 Choquette Kent D. Long wavelength vertical cavity surface emitting laser
CN1395344A (zh) * 2001-07-03 2003-02-05 扎尔林克半导体有限公司 利用一非对称光限制孔控制偏振的vcsels
US20090296754A1 (en) * 2006-06-16 2009-12-03 Vi Systems Gmbh Optoelectric Device for High-Speed Data Transfer with Electrooptically Tunable Stopband Edge of a Bragg-Reflector
CN101667715A (zh) * 2008-09-03 2010-03-10 中国科学院半导体研究所 一种单模高功率垂直腔面发射激光器及其制作方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110495061A (zh) * 2018-02-06 2019-11-22 华为技术有限公司 一种垂直腔面发射激光器
CN110495061B (zh) * 2018-02-06 2020-11-27 华为技术有限公司 一种垂直腔面发射激光器
CN109038217A (zh) * 2018-10-31 2018-12-18 厦门乾照半导体科技有限公司 延长使用寿命的vcsel芯片及制作方法和电子器件
CN109038217B (zh) * 2018-10-31 2024-04-26 厦门乾照半导体科技有限公司 延长使用寿命的vcsel芯片及制作方法和电子器件
CN111129952A (zh) * 2019-12-25 2020-05-08 长春理工大学 非对称环形结构上分布布拉格反射镜垂直腔面发射半导体激光器
CN111129952B (zh) * 2019-12-25 2020-12-22 长春理工大学 非对称环形结构上分布布拉格反射镜垂直腔面发射半导体激光器
CN114552380A (zh) * 2020-11-25 2022-05-27 上海禾赛科技有限公司 谐振腔、激光单元及芯片和激光器及形成方法、激光雷达

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WO2016008083A1 (zh) 2016-01-21

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