CN106571400B - Rub electronics phototransistor and the compound energy collector using it - Google Patents
Rub electronics phototransistor and the compound energy collector using it Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/04—Friction generators
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Light Receiving Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention provides a kind of friction electronics phototransistor and using its compound energy collector.In friction electron-optical transistor, contact-separate type friction nanometer power generator is coupled with field-effect photo electric transistor, the light transfer characteristic in field-effect photo electric transistor can be regulated and controled using the electrostatic potential that contact electrification generates, replace traditional gate voltage, it realizes the regulation to device photoelectric transfer characteristic, becomes a kind of novel friction optoelectronics device.In compound energy collector, by the friction nanometer power generator for coupling field-effect photo electric transistor and wind drive, using the output voltage of wind-force friction nanometer power generator as the inside gate voltage of regulation light energy collection device performance, realize collection while to luminous energy and wind energy, the output performance of compound energy collector is improved simultaneously, it is with important application prospects.
Description
Technical field
The present invention relates to photoelectron technical field more particularly to a kind of friction electronics phototransistor and answering using it
Close energy collector.
Background technique
Photoelectronics as rapid development new branch of science, display, illumination, sensing and in terms of have very
Wide application, however many photoelectric devices lack interaction mechanism and controllability with external environment.On the other hand, it is based on light
The energy acquisition technology of volt property can convert light energy into electric energy, can be with the energy acquisitions technology one such as other wind energies, vibrational energy
Rise collect compound energy, Lai Weiyi slightly/nanometer electronic device or sensor network nodes power supply.Currently, although various energy are received
Collection technology is very mature, but every kind of energy acquisition device can only collect the energy of single form, relatively independent between device, lacks
Weary coupling mechanism compound energy collected with conversion.
2014, the research group that Chinese Academy of Sciences's Beijing nanometer energy is led with system research institute king middle forest academician will rub
It wipes nano generator to combine with conventional field effect transistor, develops the contact electrification field effect transistor of external force touch-control.It should
Device can make gate material contact electrification under external force, form electrostatic potential and be used as gate signal, and realization in semiconductor to carrying
Flow the regulation of sub- transport property.Contact electrification field effect transistor as a kind of elemental device, can derive it is a series of can
Thus the human-computer interaction device for realizing various functions has been put forward for the first time this new research of friction electronics (Tribotronics)
Field.Friction electronics has coupled triboelectrification effect and characteristic of semiconductor, is the whole new set of applications of friction nanometer power generator, can be with
Realize the acquisition to external mechanical energy and for regulating and controlling transporting for carrier.By further coupling photoelectronics, can also spread out
Friction photoelectronics (Tribo-phototronics) frontier is born, the direct interaction of external environment and opto-electronic device is established
Mechanism realizes regulation to semiconductor electrical-optical, optical-electronic conversion process, at the same also for the collection of compound energy open one it is fine
New resolving ideas.
Summary of the invention
(1) technical problems to be solved
In view of above-mentioned technical problem, the present invention provides a kind of friction electron-optical transistor and using its compound energy receipts
Storage, to realize the collection and conversion of compound energy.
(2) technical solution
According to an aspect of the invention, there is provided a kind of friction electron-optical transistor.The friction electron-optical transistor packet
It includes: substrate, gate conductor layer and mobile frictional layer.Wherein, substrate includes: substrate, and material is heavily doped P-type silicon；Insulating layer,
It is formed in the front of substrate；And semiconductor layer, it is formed on insulating layer, by the semiconductor material system to light sensitive
Standby, the two different location depositing electrode on the semiconductor layer draws the source electrode and drain electrode of friction electronics phototransistor.Grid
Conductor layer is formed in the back side of substrate, draws the grid of friction electron-optical transistor.Mobile friction member, at least towards grid
The part of pole conductor layer is prepared by the material for being located at different location in friction electrode sequence with the material for preparing gate conductor layer,
It can move under external force, contact or separate with gate conductor layer.
According to an aspect of the invention, there is provided a kind of compound energy using above-mentioned friction electron-optical transistor is collected
Device.The compound energy collector includes: light energy collection device, wind energy collecting device and rectifier bridge.Wherein:
Light energy collection device uses the form of phototransistor, comprising: substrate and gate conductor layer.Substrate includes: substrate,
Material is heavily doped P-type silicon；Insulating layer is formed in the front of the substrate；Semiconductor layer is formed on the insulating layer,
Its material is the semiconductor material to light sensitive, and the two different location depositing electrode on the semiconductor layer draws the photoelectricity
The source electrode and drain electrode of transistor, gate conductor layer are formed in the back side of the substrate, draw the phototransistor on it
Grid.Wherein, output end of the source electrode and drain electrode of the phototransistor as light energy collection device in compound energy collector；
Wind energy collecting device, comprising: upper static friction part, lower static friction part.Wherein, upper static friction part and lower static friction part are opposite
And separate pre-determined distance.Mobile friction member is between the upper static friction part and lower static friction part, and at least its upper surface is under
The material on surface is different in friction electrode sequence by being located at from the material for preparing upper static friction part and lower static friction part opposing sides
Prepared by the material of position, which vibrates or swing under the action of the forces of the wind, with the upper static friction part and under quiet rub
It wipes part and generates contact triboelectrification；
Two input terminals of rectifier bridge are respectively connected to the upper static friction part and lower static friction part, and two output ends are as multiple
The output end of wind energy in energy collector is closed, also, its positive output end is connected to the source electrode of the phototransistor, negative output
End is connected to the grid of the phototransistor.(3) beneficial effect
Electron-optical transistor and the compound energy collector using it can be seen from the above technical proposal that the present invention rubs
It has the advantages that
(1) contact-separate type friction nanometer power generator is coupled with field-effect photo electric transistor, composition friction electronics light
Electric transistor can regulate and control the light transfer characteristic in field-effect photo electric transistor using the electrostatic potential that contact electrification generates,
Replace traditional gate voltage, realize the regulation to device photoelectric transfer characteristic, becomes a kind of novel friction optoelectronics device；
(2) it by the friction nanometer power generator of coupling field-effect photo electric transistor and wind drive, proposes a kind of compound
Energy collector, using the output voltage of wind-force friction nanometer power generator as regulation light energy collection device performance inside gate voltage,
So that the short circuit current of light energy collection device, open-circuit voltage and peak power output can become larger with the increase of wind speed, it is real
Collection while to luminous energy and wind energy, while the output performance for improving compound energy collector are showed, in photodetection, wind
Speed sensing, self actuating system and compound energy it is efficient collect with utilize etc. it is with important application prospects.
Detailed description of the invention
Fig. 1 is the structural schematic diagram according to first embodiment of the invention friction electronics phototransistor；
Fig. 2 is the operation principle schematic diagram of friction electronics phototransistor shown in Fig. 1；
Fig. 3 is the photoelectricity test result of friction electronics phototransistor shown in Fig. 1；
Fig. 4 is the structural schematic diagram according to second embodiment of the invention compound energy collector；
Fig. 5 is the equivalent circuit diagram of compound energy collector shown in Fig. 4；
Fig. 6 is short circuit current of the light energy collection device under different wind-force and open circuit electricity in compound energy collector shown in Fig. 4
Press test result；
Fig. 7 is peak power output test of the light energy collection device under different wind-force in compound energy collector shown in Fig. 4
As a result.
[main element]
10-SOI piece
11- substrate；12 silicon dioxide insulating layers
13- top layer silicon
13a- heavily doped N-type silicon；The undoped p-type top layer silicon of 13b-；
21- Copper thin film 22-FEP film；
31-Al electrode；32-Al electrode；
41- support end；42-FEP film；
43,45-Glass；44,46-Cu film；
47- rectifier.
Specific embodiment
The present invention has coupled field-effect photo electric transistor and contact-separate type friction nanometer power generator, proposes one kind and rubs
Electronics phototransistor is wiped, the light in field-effect photo electric transistor can be regulated and controled using the electrostatic potential that contact electrification generates
Electric conversion properties replace traditional gate voltage.On this basis, it is rubbed by coupling field-effect photo electric transistor and wind drive
Nano generator is wiped, a kind of compound energy collector is proposed.
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
In first exemplary embodiment of the invention, a kind of friction electronics phototransistor is provided.It please refers to
Fig. 1, the friction electronics phototransistor are based on SOI piece 10.The substrate 11 of the SOI piece be heavily doped P-type silicon, 500 μm of thickness,
Resistivity is less than 0.01 Ω cm, and top layer silicon 13 is P-type silicon, and 2.5 μm of thickness, be one layer of 0.2 μ m-thick between substrate 11
Silicon dioxide insulating layer 12.
In the upper surface part subregion of top layer silicon 13, by phosphonium ion injection and rta technique, one layer of formation is heavily doped
Miscellaneous N-type silicon 13a, depth 0.5um.The heavily doped N-type silicon 13a and the undoped p-type top layer silicon 13b shape for not carrying out ion implanting
At PN junction.The upper surface of p-type top layer silicon 13b and heavily doped N-type silicon 13a deposit the aluminium electrode 31 and aluminium electrode 32 of 1 μ m-thick respectively,
It is respectively formed Ohmic contact, source level and drain electrode as friction electronics phototransistor, external power supply.Wherein, drain electrode and source electrode
Between apply forward voltage so that PN junction is by reversed bias voltage.In this case, the upper surface of heavily doped N-type silicon 13a be used as by
Smooth surface, PN junction can generate photoelectric current under light illumination.
It is partly led it should be noted that the top layer silicon 13 in the present embodiment may be replaced by other very sensitive to illumination
The film of body material preparation, such as molybdenum disulfide, zinc oxide, cadmium sulfide and organic photoconductive material, i.e., in the p-type of heavy doping
Depositing insulating layer in the substrate of silicon then prepares the film of these semiconductor materials.It is made on the film of these semiconductor materials
Standby metal electrode can draw the source electrode and drain electrode of friction electronics phototransistor, these materials have photoconductive effect,
Conductance changes under light illumination, so that also can use it prepares field-effect photo electric transistor.
In the present embodiment, there is the Copper thin film 21 of one layer of Ohmic contact in 11 lower surface of substrate of SOI piece, as friction electronics
Learn the grid of phototransistor.Mobile frictional layer is FEP (fluorinated ethylene propylene copolymer) film 22, is had centainly with Copper thin film 21
Spacing, can move vertically under external force, contact or separate with Copper thin film 21.
Fig. 2 is the working principle diagram of friction electronics phototransistor.In Fig. 2 shown in (a), FEP film 22 is because of friction
Electrification, upper surface have negative electrical charge.It, will not be to photoelectric crystal due to having certain spacing d in original state and Copper thin film 21
Pipe has an impact, gate voltage 0.External voltage VDSIt is constant, under illumination effect, electric current I is generated between source-drain electrodeDS.Such as figure
In 2 shown in (b), under external force F effect, FEP film 22 is contacted with Copper thin film 21, in the electrostatic induction of 22 negative electrical charge of FEP film
Under effect, phototransistor will bear negative gate voltage, and p-type enhancement layer is formed in the bottom undoped with p-type top layer silicon 13b,
To increase electric current I in top layer silicon 1DSSize, play the role of regulate and control device light transfer characteristic.When external force F is removed
Afterwards, FEP film 22 separates a certain distance with Copper thin film 21 again, and it is 0 that the gate voltage that phototransistor is born, which becomes again, top layer silicon
P-type conduction channel in 1 is gradually recovered, electric current IDSBecome smaller, returns to the state as shown in Fig. 2 (a).Therefore, external force F passes through change
The distance between FEP film 22 and Copper thin film 21 d, can regulate and control the conducting channel in phototransistor, play grid voltage
Effect, to realize the regulation to device photoelectric transfer characteristic.
Fig. 3 is the photoelectricity test result of friction electronics phototransistor.As shown in figure 3, working as source-drain voltage VDSFor 0V, enter
Penetrating light is 680nm feux rouges, intensity of illumination 1mW/cm2When, electric current IDSIt is become larger, test result with the reduction of distance d
Meet the working principle of friction electronics phototransistor.
It will be understood by those skilled in the art that can also be deposited other than Copper thin film in 11 lower surface of substrate of SOI piece
The film of other metal materials or non-metallic conducting material is as grid conducting layer, such as ito thin film, Au film, Pt film or Ag
Film etc..Equally, Al electrode (31,32) can also be replaced with the electrode of other conductive materials.In addition, other than FEP film,
It can also be rubbed using other material production movements for being located at different location in friction electrode sequence with the material for preparing gate conductor layer
Wipe layer, it is preferred to use macromolecule polymer material.
Macromolecule polymer material herein is one of following material: polytetrafluoroethylene (PTFE), gathers dimethyl silicone polymer
Acid imide, poly- diphenyl propane carbonic ester, polyethylene terephthalate, aniline-formaldehyde resin, polyformaldehyde, ethyl cellulose
Element, polyamide, melamino-formaldehyde, polyethylene glycol succinate, cellulose, cellulose ethanoate, polyethylene glycol adipate,
Polydiallyl phthalate, regenerated fiber sponge, polyurethane elastomer, styrene-acrylonitrile copolymer copolymer, styrene butadiene
Copolymer, polymethacrylates, polyvinyl alcohol, polyester, polyisobutene, polyurethane flexible sponge, gathers to benzene two staple fibre
Formic acid glycol ester, polyvinyl butyral, phenolic resin, neoprene, butadiene-propylene copolymer, natural rubber, poly- third
Alkene nitrile, poly- (vinylidene chloride-co- acrylonitrile), polyethylene the third diphenol carbonate, polystyrene, polymethyl methacrylate, poly- carbon
Acid esters, polymeric liquid crystal copolymer, polychlorobutadiene, polyacrylonitrile, poly bis phenol carbonate, polyether, polytrifluorochloroethylene,
Polyvinylidene chloride, polyethylene, polypropylene, polyvinyl chloride and Parylene.
The movement frictional layer and its load-bearing part are collectively referred to as mobile friction member.The movement friction member be also possible on the whole by
FEP or the production of other macromolecule polymer materials, without repartitioning mobile frictional layer and load-bearing part, equally can be realized this hair
It is bright.
It should be noted that about the concepts such as " heavy doping ", " friction electrode sequence ", be generally acknowledge in semiconductor field it is general
It reads, concrete meaning herein no longer can be explained in detail it referring to corresponding textbook.
In the present embodiment, contact-separate type friction nanometer power generator is coupled with field-effect photo electric transistor, composition friction
Electronics phototransistor can be turned using the electrostatic potential that contact electrification generates to regulate and control the photoelectricity in field-effect photo electric transistor
Characteristic is changed, traditional gate voltage is replaced, realizes the regulation to device photoelectric transfer characteristic, becomes a kind of novel friction photoelectron
Device is learned, is with a wide range of applications.
Based on above-mentioned friction electronics phototransistor, the present invention also provides a kind of compound energy collectors.In this hair
In first bright exemplary embodiment, a kind of compound energy collector is provided.The compound energy collector includes: that luminous energy is received
Storage and wind energy collecting device.Meanwhile the light energy collection device and wind energy collecting device intercouple.
As shown in figure 4, the light energy collection device is done on the basis of first embodiment rubs electronics phototransistor
It improves.It is different from the friction electron-optical transistor of embodiment one, in light energy collection device, no longer need to apply between source electrode and drain electrode
The both ends for adding forward voltage, but directly being exported by source electrode and drain electrode as the energy of light energy collection device.In the present embodiment, with resistance
Property load R1For, the energy which collects is applied to resistive load R1Both ends.The light energy collection device and implementation
It no longer repeats herein the identical part of example friction electron-optical transistor.
Please continue to refer to Fig. 4, light energy collection device includes: the Copper thin film 44 of one pre-determined distance of spaced opposite, Copper thin film 46；
FET ribbon between Copper thin film 44, Copper thin film 46；And rectifier bridge.Wherein, Copper thin film 44 and Copper thin film 46 are respectively by glass
Glass layer 43 and glassy layer 45 support, also, glassy layer 43 is fixed on the Copper thin film 21 at the SOI piece back side.42 one end of FEP ribbon is solid
It is scheduled on support end 41, the other end freely suspends, and can swing up and down under the action of the wind.Between Copper thin film 44 and Copper thin film 46
Distance is less than the Oscillation Amplitude that wind-force acts on lower FEP ribbon.The Copper thin film 46 of the Copper thin film 44 and lower end of the FEP ribbon and upper end
Generate contact triboelectrification.FEP ribbon 42, Copper thin film 44 and Copper thin film 46 constitute the friction nanometer generating an of wind drive
Machine, i.e. wind energy collecting device.Meanwhile the positive output end of rectifier bridge is connected to the source level of friction electronics phototransistor, negative output
End is connected to the grid of phototransistor.Output end of the positive output end and negative output terminal of the rectifier bridge as wind energy collecting device.
In the present embodiment, with resistive load R2For, the energy which collects is applied to resistive load R2Both ends.
Therefore, under the action of the wind, the electricity output of friction nanometer power generator makes phototransistor bear minus gate voltage effect,
To increase electric current I in top layer silicon 13R1Size.With the enhancing of wind-force, friction nanometer power generator is exported to resistive load
R2The voltage at both ends becomes larger, electric current I thereinR2It is consequently increased, furthermore the output performance of light energy collection device also enhances therewith.
Fig. 5 is the equivalent circuit diagram of compound energy collector shown in Fig. 4.As shown in figure 5, compound energy collector can wait
Effect is by a field effect transistor (MOSFET), a photodiode (Photodiode) and a direct current friction nanometer hair
Motor (DC-TENG) composition.Wherein, direct current friction nanometer power generator, can be in wind instead of the grid power supply of field effect transistor
Electric energy is provided to external circuit resistive load under power effect, exports electric current IR2, and negative to field-effect photo electric transistor offer simultaneously
Gate voltage regulates and controls the trench size between source and drain.The photoelectric current that photodiode generates passes through the source and drain ditch of field effect transistor
Road externally exports electric current IR1.Therefore, which can be collected simultaneously solar energy and wind energy, and be converted by wind energy
The electric energy of generation can be used to the light transfer characteristic of light energy collection device simultaneously, to improve the output of compound energy collector
Performance.
Fig. 6 is short circuit current of the light energy collection device under different wind-force and open circuit electricity in compound energy collector shown in Fig. 4
Press test result.Fig. 7 is that peak power output of the light energy collection device under different wind-force is surveyed in compound energy collector shown in Fig. 4
Test result.As shown in Figure 6,7, when solar irradiation is 2mW/cm2, wind speed variation be 7m/s to 11m/s when, light energy collection device it is short
Road electric current, open-circuit voltage and peak power output become larger with the increase of wind speed, and test result meets compound energy collection
The design principle of device.
Equally it will be understood by those skilled in the art that in the present embodiment, glassy layer 43 and Copper thin film 44 form above quiet rub
Wipe part.Glassy layer 45 and Copper thin film 46 form lower static friction part.Wherein, Copper thin film 44 and Copper thin film 46 are conductive material, the two
It is used as frictional layer and conductor layer simultaneously, and the charge generated that rubs can be directly inputted into rectifier bridge.At this point, Copper thin film 43 and copper
Film 46 can also be replaced using the film of other conductive materials, such as: ito thin film, Au film, Pt film or Ag film etc..And
And Copper thin film 44 and Copper thin film 46 can also be carried by the film layer or tablet of other insulating materials, for example, plastic sheet, tree
Rouge piece etc..
It will be appreciated by persons skilled in the art that in other embodiments of the present invention, frictional layer and conductor layer can divide
It is not independently arranged, such as:
(1) it may include: upper load-bearing body for upper static friction part, be the sheet shaped piece or film prepared by insulating materials,
Form or be fixed on the lower section of gate conductor layer；Upper conductor layer is formed on the upper load-bearing body；Upper frictional layer is formed in institute
It states in upper conductor layer.In this case, the charge that upper frictional layer friction generates is input to the one of rectifier bridge via upper conductor layer
Input terminal；
It (2) may include: lower load-bearing part for lower frictional layer, for the sheet shaped piece prepared by insulating materials；Lower conductor
Layer, is formed on the lower load-bearing part；Lower frictional layer, is formed in the lower conductor layer.In this case, lower frictional layer rubs
Wipe another input terminal that the charge generated is input to rectifier bridge via lower conductor layer.
In addition, FEP ribbon 42 can also be the ribbon shape or piece of other macromolecule polymer materials as mobile friction member
Shape object, and the macromolecule polymer material differs more remoter better with the friction electrode sequence of upper and lower friction layer material.
In the present embodiment, by coupling the friction nanometer power generator of field-effect photo electric transistor and wind drive, propose
A kind of compound energy collector, using the voltage in the output of wind-force friction nanometer power generator to external circuit resistive load as regulation
The inside gate voltage of light energy collection device performance, so that the short circuit current of light energy collection device, open-circuit voltage and peak power output are all
It can become larger with the increase of wind speed, realize collection while to luminous energy and wind energy, and establish different-energy acquisition skill
Coupling mechanism between art, efficient in photodetection, wind speed sensing, self actuating system and compound energy collect and utilize
Aspect is with important application prospects.
So far, attached drawing is had been combined two embodiments of the invention are described in detail.According to above description, this field skill
Art personnel should have clear understanding to present invention friction electronics phototransistor and using its compound energy collector.
It should be noted that in attached drawing or specification text, the implementation for not being painted or describing is affiliated technology
Form known to a person of ordinary skill in the art, is not described in detail in field.In addition, the above-mentioned definition to each element and method is simultaneously
It is not limited only to various specific structures, shape or the mode mentioned in embodiment, those of ordinary skill in the art can carry out letter to it
It singly changes or replaces, such as:
(1) it can provide the demonstration of the parameter comprising particular value herein, but these parameters are worth without definite equal to corresponding, and
It is that can be similar to analog value in acceptable error margin or design constraint；
(2) direction term mentioned in embodiment, such as "upper", "lower", "front", "rear", "left", "right" etc. are only ginsengs
The direction for examining attached drawing, the protection scope being not intended to limit the invention；
(3) above-described embodiment can be based on the considerations of design and reliability, and the collocation that is mixed with each other uses or and other embodiments
Mix and match uses, i.e., the technical characteristic in different embodiments can freely form more embodiments.
In conclusion showing the invention proposes a kind of friction electronics phototransistor and regulating and controlling device by mechanical input
The human-computer interaction device of light transfer characteristic.And a kind of compound energy collector is proposed on this basis, it can be collected simultaneously
Solar energy and wind energy, and the electric energy generated using wind energy conversion is realized and is exported to light energy collection device as device inside gate voltage
The regulation of performance.The present invention extend friction electronics function element photoelectric conversion, in terms of application, for can
The photoelectric device of modulation and efficiently collect and provide potential solution route using compound energy.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (11)
1. a kind of friction electronics phototransistor characterized by comprising
Substrate, comprising:
Substrate, material are heavily doped P-type silicon；
Insulating layer is formed in the front of the substrate；And
Semiconductor layer is formed on the insulating layer, is prepared by the semiconductor material to light sensitive, in the semiconductor layer
Upper two different locations depositing electrode draws the source electrode and drain electrode of the friction electronics phototransistor；
Gate conductor layer is formed in the back side of the substrate, draws the grid of the friction electronics phototransistor；And
Mobile friction member, the part at least towards gate conductor layer are by being located at friction electricity with the material for preparing gate conductor layer
The material preparation of different location, can move under external force, contact or separate with the gate conductor layer in the sequence of pole；
Wherein, the substrate is SOI piece；
The insulating layer is the silicon dioxide insulating layer being formed in the substrate, and the semiconductor layer is to be formed in silica
P-type top layer silicon on insulating layer；
N-type heavy doping is carried out in the partial region of the p-type top layer silicon, forms heavily doped N-type silicon；In the heavily doped N-type silicon and not
Depositing electrode is distinguished in the p-type top layer silicon being doped, and draws drain electrode and the source electrode of the friction electronics phototransistor.
2. friction electronics phototransistor according to claim 1, which is characterized in that apply between the drain and source
Forward voltage, in which:
When mobile friction member is separated with the gate conductor layer, the voltage of the grid for the electronics phototransistor that rubs is 0, source
Electric current I is generated between pole and drain electrodeDS；
When mobile friction member and the gate conductor layer contact, the voltage of the grid for the electronics phototransistor that rubs is negative,
P-type enhancement layer, the current between the source and the drain I are formed on the bottom of the semiconductor layerDSIncrease.
3. friction electronics phototransistor according to claim 1, which is characterized in that the heavily doped N-type silicon with not
The p-type top layer silicon being doped forms PN junction, and as light-receiving surface, which generates under light illumination for the upper surface of heavily doped N-type silicon
Photoelectric current.
4. friction electronics phototransistor according to claim 1, which is characterized in that the material of the semiconductor layer is
One of following material: molybdenum disulfide, zinc oxide, cadmium sulfide and organic photoconductive material.
5. friction electronics phototransistor according to any one of claim 1 to 4, it is characterised in that:
The material of gate conductor layer are as follows: conductive metal material or non-metallic conducting material；
The material of the electrode of the deposition of two different locations on the semiconductor layer are as follows: conductive metal material or radio frequency material
Material；
The material for being located at different location in friction electrode sequence with material that is preparing gate conductor layer are as follows: high molecular polymer material
Material.
6. friction electronics phototransistor according to claim 5, it is characterised in that:
The non-metallic conducting material are as follows: ITO；And/or
The conductive metal material are as follows: Pt, Au, Ag, Cu or Al；And/or
The macromolecule polymer material is one of following material: polytetrafluoroethylene (PTFE), dimethyl silicone polymer, polyamides are sub-
Amine, polyethylene terephthalate, aniline-formaldehyde resin, polyformaldehyde, ethyl cellulose, gathers poly- diphenyl propane carbonic ester
Amide, melamino-formaldehyde, polyethylene glycol succinate, cellulose, cellulose ethanoate, polyethylene glycol adipate, poly- neighbour
Dially phthalate, regenerated fiber sponge, polyurethane elastomer, styrene-acrylonitrile copolymer copolymer, styrenebutadiene copolymer
Object, staple fibre, polymethacrylates, polyvinyl alcohol, polyester, polyisobutene, polyurethane flexible sponge, poly terephthalic acid
Glycol ester, polyvinyl butyral, phenolic resin, neoprene, butadiene-propylene copolymer, natural rubber, polyacrylonitrile,
Poly- (vinylidene chloride-co- acrylonitrile), polyethylene the third diphenol carbonate, polystyrene, polymethyl methacrylate, polycarbonate,
Polymeric liquid crystal copolymer, polyacrylonitrile, poly bis phenol carbonate, polyether, polytrifluorochloroethylene, gathers partially polychlorobutadiene
Dichloroethylene, polyethylene, polypropylene, polyvinyl chloride and Parylene.
7. a kind of compound energy collector characterized by comprising
Light energy collection device uses the form of phototransistor, comprising:
Substrate, comprising:
Substrate, material are heavily doped P-type silicon；
Insulating layer is formed in the front of the substrate；And
Semiconductor layer is formed on the insulating layer, and material is the semiconductor material to light sensitive, in the semiconductor layer
Upper two different locations depositing electrode, draws the source electrode and drain electrode of the phototransistor；And
Gate conductor layer, is formed in the back side of the substrate, draws the grid of the phototransistor on it；
Wherein, output end of the source electrode and drain electrode of the phototransistor as light energy collection device in compound energy collector；
Wind energy collecting device, comprising:
The upper static friction part and lower static friction part of spaced opposite pre-determined distance；And
Mobile friction member, between the upper static friction part and lower static friction part, at least material of its upper and lower surfaces
It is the material by being located at different location in friction electrode sequence with the material for preparing upper static friction part and lower static friction part opposing sides
Preparation, the movement friction member are vibrated or are swung under the action of the forces of the wind, are connect with the upper static friction part and the generation of lower static friction part
Touch triboelectrification；And
Rectifier bridge, two input terminals are respectively connected to the upper static friction part and lower static friction part, and two output ends are as compound
The output end of wind energy in energy collector, also, its positive output end is connected to the source electrode of the phototransistor, negative output terminal
It is connected to the grid of the phototransistor.
8. compound energy collector according to claim 7, it is characterised in that:
The upper static friction part includes: upper load-bearing body, for the sheet shaped piece prepared by insulating materials, is formed in the phototransistor
Gate conductor layer lower section；Upper conductor layer is formed under the upper load-bearing body；And upper frictional layer, it is formed on described and leads
Under body layer；
The lower static friction part includes: lower load-bearing part, for the sheet shaped piece prepared by insulating materials；Lower conductor layer is formed in described
On lower load-bearing part；And lower frictional layer, it is formed in the lower conductor layer；
Wherein, two input terminals of the rectifier bridge are respectively connected to the upper conductor layer and the lower static friction of the upper static friction part
The lower conductor layer of part；The mobile friction member is by being located in friction electrode sequence with the material for preparing upper frictional layer and lower frictional layer
It is prepared by the material of different location.
9. compound energy collector according to claim 8, it is characterised in that: the upper load-bearing body and the lower load-bearing part
For glassy layer；
In upper static friction part, the upper conductor layer and upper frictional layer are same layer, are prepared by metal or non-metallic conducting material；
In lower static friction part, the lower conductor layer and lower frictional layer are same layer, are prepared by metal or non-metallic conducting material.
10. compound energy collector according to claim 7, which is characterized in that the mobile friction member is polyphosphazene polymer
Close the banding object of floaing of object material preparation；
Wherein, one end of the banding object of floaing is fixed the position of air inlet between upper static friction part and lower static friction part, another
End freely suspends, and can swing up and down under the action of the wind, to contact with the upper static friction part and the generation of lower static friction part
Triboelectrification.
11. compound energy collector according to claim 7, which is characterized in that the substrate is SOI piece；
The insulating layer is the silicon dioxide insulating layer being formed in the substrate, and the semiconductor layer is to be formed in silica
P-type top layer silicon on insulating layer；
N-type heavy doping is carried out in the partial region of the p-type top layer silicon, forms heavily doped N-type silicon；The heavily doped N-type silicon with not
The p-type top layer silicon being doped forms PN junction；It is deposited respectively on the heavily doped N-type silicon and the p-type top layer silicon that is not doped
Electrode draws drain electrode and the source electrode of the phototransistor；
Wherein, the upper surface of the heavily doped N-type silicon generates photoelectric current as light-receiving surface, the PN junction under light illumination.
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| CN109347360B (en) * | 2018-12-13 | 2020-12-01 | 电子科技大学 | Contact separation type semiconductor friction generator |
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| CN103780128B (en) * | 2013-04-16 | 2016-04-06 | 北京纳米能源与***研究所 | A kind of wind-force friction nanometer power generator |
| CN104600114B (en) * | 2013-11-01 | 2019-02-19 | 北京纳米能源与***研究所 | Rub field effect transistor |
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