CN106570261B - Parameter extraction method for integrated gate pole commutation thyristor drive and follow current loop - Google Patents
Parameter extraction method for integrated gate pole commutation thyristor drive and follow current loop Download PDFInfo
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Abstract
A method for extracting parameters of an integrated gate commutated thyristor driving and follow current loop comprises the following steps: 1. analyzing the running characteristics of the integrated gate commutated thyristor drive circuit and the follow current loop, and providing an equivalent circuit of the integrated gate commutated thyristor in the turn-off transient follow current process; 2. deducing an expression of terminal voltage of the integrated gate current thyristor in different states according to the equivalent circuit obtained in the step 1; 3. carrying out a single-tube test experiment of the integrated gate commutated thyristor, and providing a parameter extraction method of the integrated gate commutated thyristor drive turn-off circuit and the follow current circuit by means of experimental results of various electrical quantities of the integrated gate commutated thyristor and the follow current circuit in the turn-off transient process of the integrated gate commutated thyristor under the specific clamping voltage and the turn-off current; 4. and carrying out experiments of different voltage levels and turn-off currents on the integrated gate commutated thyristor, and determining parameter values of a drive turn-off circuit and a follow current loop of the integrated gate commutated thyristor by processing different experimental results.
Description
Technical Field
The invention relates to a parameter extraction method for an integrated gate commutated thyristor drive turn-off circuit and a follow current loop.
Background
An Integrated Gate Commutated Thyristor (IGCT) is composed of two parts, namely a Gate Commutated Thyristor (GCT) and an integrated gate circuit, of a core device, and based on a gate turn-off thyristor (GTO), the IGCT has stronger switching characteristics by virtue of a transparent anode and a buffer layer structure and a gate hard drive technology, so that the working state of the GTO in the transient turn-off process of the transistor and the thyristor is avoided, and the IGCT inherits the high-power processing capability of the GTO. The turn-off capability of the IGCT is closely related to the integrated inductance of the gate drive turn-off circuit, and because the IGCT integrates the GCT and the gate drive circuit on the same printed circuit board, the integrated inductance of the gate drive turn-off circuit is extremely low and is only several nanohenries, so the IGCT can turn off thousands of amperes without absorbing a buffer circuit.
Currently, research work on the problems related to the switching-off transient state of the IGCT is becoming a research focus, including research on an IGCT commutation mechanism, research on an optimal design of a gate drive circuit, research on calculating the junction temperature of the IGCT by using the operating characteristics of the drive circuit, and the like, but the research work on the integrated gate drive switching-off circuit for controlling the switching-off of the IGCT and a freewheeling circuit influencing the switching-off characteristics of the integrated gate drive switching-off circuit are less involved. Moreover, the two ends of the IGCT applied to the high-power converter are provided with freewheeling diodes respectively, so that a freewheeling loop is provided for a bridge arm, and the IGCT is prevented from being damaged due to overhigh pressure bearing. In the initial stage of the turn-off transient of the IGCT, the reverse gate driving voltage will make the freewheeling diode conduct under a forward bias, so that the operating characteristics of the freewheeling diode will also affect the turn-off transient of the IGCT. The document "advanced to Extract the associated Junction Temperature Using Gate-channel Voltage" focuses on extracting the Junction Temperature During the operation of the IGCT by a method combining experiments and simulations, and the document "influence of the anti-parallel diode on the IGCT turn-off process" only analyzes the influence of the anti-parallel diode of the IGCT on the IGCT turn-off process, and uses the experimental result to explain the existence of the influence, but does not relate to the influence of the operation condition of the whole freewheeling circuit including the Gate drive turn-off circuit of the IGCT.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a parameter extraction method for an integrated gate commutated thyristor driving turn-off circuit and a follow current loop. The invention adopts a method of combining theoretical analysis and experimental results to realize the extraction of key parameters of the integrated gate commutated thyristor driving turn-off circuit and the follow current loop.
The invention relates to a method for extracting parameters of an integrated gate commutated thyristor driving turn-off circuit and a follow current loop, which comprises the following steps:
step 1: analyzing the running characteristics of the integrated gate commutated thyristor drive circuit and the follow current loop, and providing an equivalent circuit of the integrated gate commutated thyristor in the turn-off transient follow current process;
step 2: deducing an expression of terminal voltage of the integrated gate current thyristor in different states according to the equivalent circuit obtained in the step 1;
and step 3: carrying out a single-tube test experiment of the integrated gate commutated thyristor with specific clamping voltage and turn-off current, and providing a parameter extraction method of the integrated gate commutated thyristor drive turn-off circuit and the follow current circuit by means of experimental results of various electrical quantities of the integrated gate commutated thyristor and the follow current circuit in the turn-off transient process of the integrated gate commutated thyristor;
and 4, step 4: and carrying out experiments of different voltage levels and turn-off currents on the integrated gate commutated thyristor, and determining parameter values of a drive turn-off circuit and a follow current loop of the integrated gate commutated thyristor by processing different experimental results.
Each step is specifically described as follows:
1. in the step 1, the equivalent circuit of the turn-off transient follow current process of the integrated gate commutated thyristor comprises a forward conduction stage equivalent circuit, a current rise stage equivalent circuit, a turn-off and reverse recovery stage equivalent circuit and a resonance stage equivalent circuit;
2. in the step 2, in the equivalent circuit in the transient afterflow process of turn-off of the integrated gate commutated thyristor at different stages, the voltage expressions of the integrated gate commutated thyristor terminal are different, including the voltage expression v of the terminal at the forward conduction stageAK1Terminal voltage expression v in current rising phaseAK2Terminal voltage v in turn-off and reverse recovery phasesAK3Expression:
wherein, VGUFor turning off the temporaryState drive power supply, LnIntegrated inductance for gate drive turn-off circuit iD1Is a freewheeling diode current, iGIs a gate current, VTBuilt-in PNP transistor on-state voltage drop v for integrated gate commutated thyristorPNPBuild-in PNP transistor resistance state voltage drop for the integrated gate pole commutation thyristor;
3. in said step 3, the clamping voltage V of the specific integrated gate commutated thyristorAKIs 2000V and the off current IAFor 2000A, in the turn-off transient process of the integrated gate commutated thyristor, the experimental results of the electric quantity of the integrated gate commutated thyristor and the follow current loop comprise the terminal voltage v of the integrated gate commutated thyristorAKAnd anode current iAA freewheeling diode current iD1And main circuit current iT；
4. In the step 3, the parameters of the integrated gate commutated thyristor drive turn-off circuit and the follow current loop comprise commutation time TCGate drive turn-off circuit integrated inductor LnEquivalent inductance L of follow current loop1And an equivalent capacitance C1。
5. In the step 3, the commutation time TCThe extraction method is to utilize the terminal voltage v of the integrated gate pole commutated thyristor in turn-off transient stateAKAnd a freewheeling diode current iD1Directly measuring and extracting the turn-off transient experimental waveform;
6. in step 3, the gate drive turn-off circuit integrated inductor LnThe extraction method is to utilize the terminal voltage v of the integrated gate pole commutated thyristor in turn-off transient stateAKAnd a freewheeling diode current iD1The turn-off transient test waveform of (2) is obtained by equation (7):
wherein v isAK1Integrating gate commutated thyristor terminal voltage, v, for forward conduction phaseAK2Integrating gate commutated thyristor terminal voltage, I, for current ramp-up phaseTIs the main circuit current, TCIs the commutation time;
7. in the step 3, the process is continuedEquivalent inductance L of current loop1The extraction method is to utilize the terminal voltage v of the integrated gate pole commutated thyristor in turn-off transient stateAKAnd a freewheeling diode current iD1The turn-off transient test waveform of (a) is obtained by equation (8):
wherein v isAK2Integrating gate commutated thyristor terminal voltage, i, for current ramp-up phaseD1Is the main circuit current;
8. in step 3, the equivalent capacitor C of the follow current loop1The extraction method is to utilize the terminal voltage v of the integrated gate pole commutated thyristorAKAnd anode current iAA freewheeling diode current iD1Main circuit current iTThe turn-off transient test waveform of (2) is obtained by equation (5):
wherein L isnIntegrated inductance for gate drive turn-off circuit, L1The equivalent inductance of the follow current loop, and T is the oscillation period;
9. in step 4, the different voltage levels and the different turn-off currents are 700V/700A, 1000V/1000A, 1500V/1500A and 2000V/2000A respectively, theoretical analysis is the equivalent circuit and the extraction method described in 1-8 above, the experiment is a single-pass test experiment, and finally, the integrated inductor L of the gate drive turn-off circuit extracted in different voltage levels and turn-off currents is selectednEquivalent inductance L of follow current loop1And an equivalent capacitance C1Algebraic mean of the parameters, i.e. L can be determinedn、L1、C1The true value of (d).
The invention provides a method for effectively extracting parameters of an integrated gate commutated thyristor drive turn-off circuit and a follow current loop without damaging the structure of an IGCT gate drive circuit based on theoretical analysis of the integrated gate commutated thyristor drive turn-off circuit and the follow current loop and combined with experimental verification, the extraction process is simple and feasible, and the method can be used for effectively extracting parameters of the integrated gate commutated thyristor drive turn-off circuit and the follow current loop without damaging the structure of the IGCT gate commutated thyristorThe performance detection of the actual working condition of the integrated gate commutated thyristor drive turn-off circuit is realized, the service life of the drive circuit is predicted, the safe operation of the IGCT is ensured, and the commutation time T is controlledCAnd gate drive turn-off circuit integrated inductor LnThe method is the key point of the design of the IGCT driving turn-off circuit, and the accurate extraction of the IGCT driving turn-off circuit and the IGCT driving turn-off circuit has reference value for the research and improvement work of the driving circuit.
Drawings
FIG. 1 is a flow chart of a parameter extraction method of the present invention;
FIG. 2a is a schematic diagram of a split structure of an equivalent structure of a gate commutated thyristor;
FIG. 2b is a schematic diagram of an equivalent circuit of a two-transistor equivalent structure of a gate commutated thyristor;
FIG. 3a is a schematic diagram illustrating the operation of the gate drive shutdown circuit during an IGCT shutdown transient;
FIG. 3b is a schematic diagram illustrating the operation of the gate driver shutdown circuit when the IGCT is in an OFF state;
fig. 4a is a schematic diagram of an equivalent circuit in a forward conduction stage of an IGCT turn-off transient freewheeling process;
FIG. 4b is a schematic diagram of an equivalent circuit of the IGCT shutdown transient freewheeling process at the current rise stage;
FIG. 4c is a schematic diagram of an equivalent circuit of the IGCT turn-off transient follow current process turn-off and reverse recovery stages;
FIG. 4d is a schematic diagram of an equivalent circuit in the resonance stage of the IGCT turn-off transient follow current process;
FIG. 5 is a schematic diagram of an IGCT single-pass test platform;
FIG. 6a is the IGCT terminal voltage V at the IGCT turn-off transient state at a voltage level of 2000V and a turn-off current of 2000AAKAnd anode current iAMain circuit current iTA freewheeling diode current iD1An experimental oscillogram;
FIG. 6b is the IGCT terminal voltage V at the IGCT turn-off transient state at a voltage level of 2000V and a turn-off current of 2000AAKWith freewheeling diode current iD1Local enlarged view of experimental waveform;
FIG. 7a shows the IGCT terminal voltage V at the IGCT turn-off transient at 700V, 700A, and 700AAKAnd an anodeCurrent iAMain circuit current iTA freewheeling diode current iD1Experimental oscillograms, and vAKAnd iD1Local enlarged view of experimental waveform;
FIG. 7b is the IGCT terminal voltage V at the IGCT turn-off transient state at a voltage level of 1000V and a turn-off current of 1000AAKAnd anode current iAMain circuit current iTA freewheeling diode current iD1Experimental oscillograms, and vAKAnd iD1Local enlarged view of experimental waveform;
FIG. 7c shows IGCT terminal voltage V at IGCT turn-off transient with voltage level 1500V and turn-off current 1500AAKAnd anode current iAMain circuit current iTA freewheeling diode current iD1Experimental oscillograms, and vAKAnd iD1The experimental waveform is partially magnified.
Detailed Description
The invention is further described below with reference to the accompanying drawings and the detailed description.
FIG. 1 is a flow chart of a parameter extraction method according to the present invention. As can be seen from fig. 1, the present invention comprises the following steps: step S1: analyzing the running characteristics of the integrated gate commutated thyristor drive circuit and the follow current loop, and providing an equivalent circuit of the integrated gate commutated thyristor in the turn-off transient follow current process; step S2: deducing an expression of the terminal voltage of the integrated gate current thyristor in different states according to the equivalent circuit obtained in the step S1; step S3: carrying out a single-tube test experiment of the integrated gate commutated thyristor with specific clamping voltage and turn-off current, and providing a parameter extraction method of the integrated gate commutated thyristor drive turn-off circuit and the follow current circuit by means of experimental results of various electrical quantities of the integrated gate commutated thyristor and the follow current circuit in the turn-off transient process of the integrated gate commutated thyristor; step S4: carrying out experiments of different voltage levels and turn-off currents on the integrated gate commutated thyristor, and determining parameter values of a drive turn-off circuit and a follow current loop of the integrated gate commutated thyristor by processing different experimental results;
1. step 1: analyzing the running characteristics of the integrated gate commutated thyristor drive circuit and the follow current loop, and providing an equivalent circuit of the integrated gate commutated thyristor in the turn-off transient follow current process:
fig. 2a and 2b are a schematic diagram of a split structure and an equivalent circuit of a two-transistor equivalent structure of a gate commutated thyristor, respectively. As shown in fig. 2a and 2b, the subject structure of the gate commutated thyristor GCT still consists of a typical "four-layer three-junction", i.e. its working principle is equivalent to a two-transistor structure. A. K, G is the anode, cathode and gate terminal of the gate commutated thyristor GCT, the equivalent built-in PNP and NPN are connected with each other, the base and collector of the gate commutated thyristor GCT are the collector and base of the gate commutated thyristor GCT, respectively, forming a positive feedback structure. When the driving unit provides a forward voltage, a current is injected through a terminal G, which is equivalent to providing a base current for the built-in NPN, so that the built-in NPN is firstly conducted. After the built-in NPN is conducted, the collector current of the built-in NPN provides enough base current for the built-in PNP to enable the built-in PNP to be conducted therewith, the built-in PNP collector current provides base current for the built-in NPN, so that a positive feedback process is formed, and the gate pole commutation thyristor GCT is changed from an off state to an on state when both of the built-in NPN and the built-in NPN reach a saturation state; when the driving unit provides reverse voltage, current is extracted through a terminal G, the built-in NPN loses base current, cathode current rapidly commutates to a gate pole, the gate pole commutate thyristor GCT is changed from a thyristor to PNP losing base current, and anode current is gradually cut off.
Fig. 3a and 3b are schematic diagrams illustrating the operation states of the gate driving turn-off circuit in the turn-off transient state and the turn-off state of the IGCT, respectively. As shown in fig. 3a, when the IGCT is turned off, the switch S of the turn-off circuit is driven to close, the turn-off circuit is driven to enter the working state, and the reverse gate driving voltage VGUApplied to both ends of a built-in NPN emitter junction to reverse-block the emitter junction and exit the operation, N+Side current IinThe decrease is 0, the IGCT cathode current commutates completely to the gate, and the gate commutated thyristor GCT is gradually turned off in the form of PNP with lost base injection. As shown in fig. 3b, in order to avoid the IGCT being turned on by mistake, the structure of the driving circuit is not changed in the off state, and the gate-cathode always bears the reverse bias voltage.
FIG. 4a, FIG. 4b, FIG. 4c, and FIG. 4d are schematic diagrams of equivalent circuits in forward conducting phase, current rising phase, and turn-off and reverse directions of the IGCT turn-off transient freewheeling process, respectivelyA recovery stage equivalent circuit schematic diagram and a resonance stage equivalent circuit schematic diagram. As shown in fig. 4a, 4b, 4c, and 4D, the free wheel diode D1The working state of the system divides an equivalent circuit in the process of switching off the transient follow current of the IGCT into four stages, namely a forward conduction stage, a current rising stage, a switching-off and reverse recovery stage and a resonance stage.
And (3) a forward conduction stage: built-in NPN emitter junction equivalent to Din，L1Is IGCT and freewheeling diode D1The equivalent inductance of the follow current loop is formed, S is a switch of the drive turn-off circuit, and the IGCT is in a closed state when being turned off. Because the switching-off transient state current conversion time of the IGCT is extremely short, the IGCT does not bear the voltage drop of the main circuit at the stage, and the built-in PNP voltage drop is about the on-state voltage drop V of the IGCTTCan be regarded as a constant voltage source, the main circuit current ITConstant current source, cathode current iinFrom DinCommutating to gate, gate current iGIs continuously increased, finally iinDecrease to 0, then iGIs equal to IT，LnOnly a few nanohenries, VTSmaller, VGUUsually 20V, so VAK1<0, i.e., the anode terminal A is at a low potential with respect to the cathode terminal K, the flywheel diode D1Is conducted under forward bias and has a current of iD1Then, the equivalent circuit diagram of the forward conduction stage as shown in fig. 4a can be obtained.
And (3) a current rising stage: the current has been reversed from cathode to gate and cathode side diode DinReverse cut-off has exited the operating state, so satisfy iGIs equal to iA，iAComprising ITAnd iD1Two components, the stage ITAnd VTCan still be regarded as a constant current source and a constant voltage source, at this time, vAK2Still negative, iD1At | vAK2If the current continues to rise under the action of | and the carriers in the P-base region are further extracted along with the turn-off transient state, the equivalent circuit diagram at the current rising stage as shown in fig. 4b can be obtained on the basis of fig. 4 a.
Shutdown and reverse recovery phases: at the end of the IGCT off-transient storage period, the IGCT remains capable of conducting current, i.e., ITThe N base region is unchanged, but the N base region already bears external voltage, so that the built-in PNP voltage drop begins to rise and is no longer VT. Because the IGCT is converted into a transistor without base current from a thyristor, the base-suspended PNP replaces a constant voltage source, and the pressure bearing is changed into vPNPAccompanied by vPNPIncrease of vAK3Approaching 0 by negative, resulting in diD1The/dt is reduced, but because of vPNPA state in which the time duration is extremely short, and when the anode terminal A becomes high potential v with respect to the cathode terminal KAK3>At 0, D1Under reverse bias voltage to turn off state iD1Decreasing rapidly and entering the reverse recovery phase, the equivalent circuit diagram of the shutdown and reverse recovery phase shown in fig. 4c can be obtained on the basis of fig. 4 b.
A resonance stage: due to vPNPRapidly rising, anodic current iAIn the descending stage of IGCT turn-off transient state, the main circuit current iTReduced with the reduction that the current is not equivalent to a constant current source IT. Freewheeling diode D1After the reverse recovery current is recovered to 0 for the first time, due to the IGCT and the freewheeling diode D1The formed follow current loop has an equivalent capacitance C1Resulting in a freewheeling diode D1It does not immediately completely cut off. At this time, the IGCT and the freewheeling diode D1The potential barrier region of the internal pressure-bearing PN junction is widened when the almost equal external voltage is borne, so that the two show the potential barrier capacitance effect. At this time, PNP and freewheeling diode D are built in1All are considered as ideal devices, and are only used for bearing external voltage, then the equivalent circuit diagram of the resonance stage shown in fig. 4d can be obtained on the basis of fig. 4 c.
2. Step 2: deducing an expression of terminal voltage of the integrated gate current thyristor in different states according to the equivalent circuit obtained in the step 1:
and (3) a forward conduction stage: IGCT terminal voltage v from FIG. 4aAK1Expression:
and (3) a current rising stage: IGCT anode current i can be obtained from FIG. 4bAAnd terminal voltage vAK2Expression:
iA＝iG＝IT+iD1 (2)
shutdown and reverse recovery phases: from FIG. 4c the IGCT terminal voltage v can be obtainedAK3Expression:
a resonance stage: as shown in FIG. 4D, IGCT and D1The formed follow current loop forms a series resonance circuit, and the oscillation period T satisfies the following expression:
in the formulae (1) to (5), VGUTo switch off the transient drive power supply, LnIntegrated inductance for gate drive turn-off circuit, L1Is equivalent inductance of follow current loop, C1Is a free-wheeling loop equivalent capacitance iD1Is a freewheeling diode current, iGIs the gate current iTIs the main circuit current, VTBuilt-in PNP transistor on-state voltage drop v for integrated gate commutated thyristorPNPA PNP transistor resistance state voltage drop is built in the integrated gate pole commutation thyristor, and T is an oscillation period.
3. And step 3: the method comprises the following steps of carrying out a single-tube test experiment of the integrated gate commutated thyristor with specific clamping voltage and specific turn-off current, and providing a parameter extraction method of the integrated gate commutated thyristor drive turn-off circuit and the follow current circuit by means of experimental results of various electrical quantities of the integrated gate commutated thyristor and the follow current circuit in the turn-off transient process of the integrated gate commutated thyristor:
FIG. 5 is a schematic diagram of an IGCT single-tube testing platform for obtaining the electrical quantities of the integrated gate-commutated thyristor and the freewheeling circuit during the transient turn-off process of the integrated gate-commutated thyristor under different voltage levels and turn-off currentsResults of experiments, including integrated gate commutated thyristor terminal voltage vAKAnd anode current iAA freewheeling diode current iD1Main circuit current iT. According to the experimental requirement, the test platform takes a resistor with the resistance value of 1 ohm as a load, and utilizes an external control circuit to send a single-pulse light control signal which is input into an IGCT drive circuit, so as to realize the single-pulse work of the IGCT. In FIG. 5, IGCT is a model 4500V/4000A 5SHY 35L4520 manufactured by ABB corporation as freewheeling diode D1Is a D1331SH 45T product manufactured by England.
FIG. 6a is the IGCT terminal voltage V at the IGCT turn-off transient state at a voltage level of 2000V and a turn-off current of 2000AAKWith freewheeling diode current iD1Local enlarged view of experimental waveform; FIG. 6b is the IGCT terminal voltage V at the IGCT turn-off transient state at a voltage level of 2000V and a turn-off current of 2000AAKWith freewheeling diode current iD1The experimental waveform is partially magnified. By using the theoretical analysis of fig. 4a, 4b, 4c, and 4d and the experimental results of fig. 6a and 6b, the parameters of the integrated gate commutated thyristor driving turn-off circuit and the freewheeling circuit, including the commutation time T, can be extractedCGate drive turn-off circuit integrated inductor LnEquivalent inductance L of follow current loop1And an equivalent capacitance C1。
Commutation time TCThe extraction method comprises the following steps: current change rate di in IGCT turn-off transient commutation phaseGMaximum of/dt, making LnThe IGCT terminal voltage v at the commutation stage is known from the formulas (1) and (3)AK1Absolute value significantly less than iD1V during the current rise phaseAK2Absolute value, therefore vAK1The duration is the commutation time TC. Based on the above analysis, the commutation time T can be known from the duration of the first stage in FIG. 6bC＝229ns。
Gate pole driving turn-off circuit integrated inductor LnThe extraction method comprises the following steps: the current from the cathode to the gate in the commutation stage is the anode current I to be cut offTAnd the current change rate of the current conversion stage is far greater than that of each stage iD1Rate of change of (1), then diD1/dt in commutation phase pair LnInduced voltage drop vLnLess influence, vLnMainly composed ofTAnd (4) determining the commutation speed. Combining the stage (i) of FIG. 6b with the formulas (1) and (3), the commutation stage v can be obtainedLnExpression:
|vLn|＝|vAK1-vAK2| (6)
further obtain LnExpression:
at this time, the commutation current IT2000A, commutation time TC229ns, fig. 6b shows | vAK1|＝6.0V、|vAK2L is 18.3V, substituted by formula (7)n＝1.41nH。
Equivalent inductance L of follow current loop1The extraction method comprises the following steps: viewing stage (ii) of FIG. 6b, iD1At the end of the current ramp-up phase, the built-in PNP has begun to bear pressure, resulting in | vAK2I decreases, then iD1The rate of rise then gradually slows down, but the initial part v of the phaseAK2And diD1All dt are relatively stable, and D1The on-state voltage drop is negligible, and as can be seen from the equivalent circuit diagram of FIG. 4b, vAK2Almost all falling at L1At both ends, so that stage v can be selectedAK2And diD1(dt) calculation of L1As shown in formula (8):
from FIG. 6b the initial part v is easily knownAK2And diD1(dt) substitution of formula (8) to give L1＝163nH。
Equivalent capacitor C of follow current loop1The extraction method comprises the following steps: from stage (iv) of FIG. 6b, when i isD1After the reverse recovery current is reduced to 0, D1It is not immediately turned off but forms a series resonant circuit with IGCT with period T. Referring to FIG. 6a, it can be easily seen that the stable resonance part of the IGCT turn-off transient current falling phase, i.e. i in the red periodAAnd iD1The periodicity is significant, from the periodCorresponding waveform can obtain T ═ 112.1ns, which is then mixed with L1、LnCo-substitution of formula (5) to give C1＝1.94nF。
4. And 4, step 4: different voltage grades and turn-off current experiments are carried out on the integrated gate commutated thyristor, and parameter values of a drive turn-off circuit and a follow current loop of the integrated gate commutated thyristor are determined by processing different experiment results:
FIGS. 7a, 7b, and 7c show the IGCT terminal voltage V of the IGCT turn-off transient state when the voltage level is 700V and the turn-off current 700A, the voltage level is 1000V and the turn-off current 1000A, and the voltage level is 1500V and the turn-off current 1500A, respectivelyAKAnd anode current iAMain circuit current iTA freewheeling diode current iD1Experimental oscillograms, and vAKAnd iD1The experimental waveform is partially magnified. With respect to fig. 7a, 7b, 7c, commutation time T can be extracted by the same method as described aboveCGate drive turn-off circuit integrated inductor LnEquivalent inductance L of follow current loop1And an equivalent capacitance C1The parameter extraction results are shown in table 1.
TABLE 1 different VAK、IATime-drive turn-off circuit and freewheeling loop parameters
| VAK/V_IA/A | TC/ns | Ln/nH | L1/nH | C1/nF | T/ns |
| 700_700 | 93 | 1.62 | 158 | 2.00 | 112.3 |
| 1000_1000 | 129 | 1.57 | 163 | 1.95 | 112.5 |
| 1500_1500 | 200 | 1.55 | 162 | 2.02 | 114.3 |
| 2000_2000 | 229 | 1.41 | 163 | 1.94 | 112.1 |
The inductance L of the 5SHY 35L4520 IGCT drive turn-off circuit can be determined by taking the algebraic average value of each parameter in the table 1nAnd D1331SH 45T-type freewheeling diode D1The parameters of the follow current loop are as follows:
Claims (3)
1. a method for extracting parameters of a driving and follow current loop of an integrated gate commutated thyristor, which is characterized by comprising the following steps:
step 1: analyzing the running characteristics of the integrated gate commutated thyristor drive circuit and the follow current loop, and providing an equivalent circuit of the integrated gate commutated thyristor in the turn-off transient follow current process;
step 2: deducing an expression of terminal voltage of the integrated gate current thyristor in different states according to the equivalent circuit obtained in the step 1;
and step 3: carrying out a single-tube test experiment of the integrated gate commutated thyristor with specific clamping voltage and turn-off current, and providing a parameter extraction method of the integrated gate commutated thyristor drive turn-off circuit and the follow current circuit by means of experimental results of various electrical quantities of the integrated gate commutated thyristor and the follow current circuit in the turn-off transient process of the integrated gate commutated thyristor;
the specific integrated gate commutated thyristor clamping voltage VAKIs 2000V and the off current IAFor 2000A, in the turn-off transient process of the integrated gate commutated thyristor, the experimental results of the electric quantity of the integrated gate commutated thyristor and the follow current loop comprise the terminal voltage v of the integrated gate commutated thyristorAKAnd anode current iAA freewheeling diode current iD1And main circuit current iT；
The parameters of the integrated gate pole commutating thyristor drive turn-off circuit and the follow current loop comprise commutation time TCGate drive turn-off circuit integrated inductor LnEquivalent inductance L of follow current loop1And an equivalent capacitance C1；
The commutation time TCThe extraction method is to utilize the terminal voltage v of the integrated gate pole commutated thyristor in turn-off transient stateAKAnd a freewheeling diode current iD1Directly measuring and extracting the turn-off transient experimental waveform;
the gate pole drive turn-off circuit integrated inductor LnThe extraction method is to utilize the terminal voltage v of the integrated gate pole commutated thyristor in turn-off transient stateAKAnd a freewheeling diode current iD1The turn-off transient test waveform of (2) is obtained by equation (7):
wherein v isAK1Integrating gate commutated thyristor terminal voltage, v, for forward conduction phaseAK2Integrating gate commutated thyristor terminal voltage, I, for current ramp-up phaseTIs the main circuit current, TCIs the commutation time;
the equivalent inductance L of the follow current loop1The extraction method is to utilize the terminal voltage v of the integrated gate pole commutated thyristor in turn-off transient stateAKAnd a freewheeling diode current iD1The turn-off transient test waveform of (a) is obtained by equation (8):
wherein v isAK2Integrating gate commutated thyristor terminal voltage, i, for current ramp-up phaseD1Is the freewheeling diode current;
the equivalent capacitor C of the follow current loop1The extraction method is to utilize the terminal voltage v of the integrated gate pole commutated thyristorAKAnd anode current iAA freewheeling diode current iD1Main circuit current iTThe turn-off transient test waveform of (2) is obtained by equation (5):
wherein L isnIntegrated inductance for gate drive turn-off circuit, L1The equivalent inductance of the follow current loop, and T is the oscillation period;
and 4, step 4: and carrying out experiments of different voltage levels and turn-off currents on the integrated gate commutated thyristor, and determining parameter values of a drive turn-off circuit and a follow current loop of the integrated gate commutated thyristor by processing different experimental results.
2. The method as claimed in claim 1, wherein the equivalent circuit of turn-off transient follow current process of the integrated gate commutated thyristor in step 1 comprises an equivalent circuit of forward conduction phase, an equivalent circuit of current rise phase, an equivalent circuit of turn-off and reverse recovery phase and an equivalent circuit of resonance phase.
3. The method as claimed in claim 1, wherein the step 2 derives the terminal voltage expressions of the integrated gate commutated thyristor under different states, including the terminal voltage expression v of the forward conduction stageAK1Terminal voltage expression v in current rising phaseAK2Terminal voltage v in turn-off and reverse recovery phasesAK3Expression:
wherein, VGUTo switch off the transient drive power supply, LnIntegrated inductance for gate drive turn-off circuit iD1Is a freewheeling diode current, iGIs a gate current, VTBuilt-in PNP transistor on-state voltage drop v for integrated gate commutated thyristorPNPThe PNP transistor resistance state voltage drop is built in the integrated gate pole commutation thyristor.
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| CN108092491B (en) * | 2018-01-02 | 2024-03-12 | 清华大学 | Power management circuit applied to GCT device gate electrode drive |
| CN109709423B (en) * | 2018-12-27 | 2020-07-03 | 清华大学 | Method for measuring stray parameters of current conversion loop of electrical device |
| CN110146800B (en) * | 2019-05-08 | 2020-07-03 | 清华大学 | Method for measuring gate current and turn-off characteristics of IGCT device |
| CN111669160B (en) * | 2020-06-29 | 2023-05-26 | 中车株洲电力机车研究所有限公司 | GCT turn-off circuit and control method thereof |
| CN112953192B (en) * | 2021-03-22 | 2023-03-14 | 清华大学 | Method for determining integrated gate commutated thyristor power module buffer circuit |
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