CN106560942B - A kind of processing method of Silicon Based Anode Materials for Lithium-Ion Batteries - Google Patents

A kind of processing method of Silicon Based Anode Materials for Lithium-Ion Batteries Download PDF

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Publication number
CN106560942B
CN106560942B CN201610370530.4A CN201610370530A CN106560942B CN 106560942 B CN106560942 B CN 106560942B CN 201610370530 A CN201610370530 A CN 201610370530A CN 106560942 B CN106560942 B CN 106560942B
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processing method
silicon powder
hydrogen
combination electrode
silicon
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CN106560942A (en
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张维民
何雨石
汪小平
马紫峰
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Shanghai Ruge Technology Development Co Ltd
Shanghai Jiaotong University
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Shanghai Ruge Technology Development Co Ltd
Shanghai Jiaotong University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/36Selection of substances as active materials, active masses, active liquids
    • H01M4/38Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H01M4/386Silicon or alloys based on silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/052Li-accumulators
    • H01M10/0525Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/13Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/134Electrodes based on metals, Si or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/13Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139Processes of manufacture
    • H01M4/1395Processes of manufacture of electrodes based on metals, Si or alloys
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

Abstract

The invention discloses a kind of processing methods of Silicon Based Anode Materials for Lithium-Ion Batteries.The processing method are as follows: 1) silicon powder, assistant formation material are dispersed in volatile solvent, obtain solution A;The mass percent that silicon powder accounts for raw material total amount is 5%~90%;2) acquired solution A is filtered, and drying and forming-film or club are to form combination electrode;3) combination electrode is fixed on the vibrator of electrospark impregnation machine, control operating voltage is 120~250V, and operating current is 0.1~3A, and under inert atmosphere or reducing atmosphere, using conductive plate as substrate, will be deposited on substrate after the combination electrode etching impact after refinement;4) material on base material will be deposited to scrape.Processing method provided by the invention is environmental-friendly, simple and easy to do, and yield is high, and controllability is good, is suitble to large-scale production.

Description

A kind of processing method of Silicon Based Anode Materials for Lithium-Ion Batteries
Technical field
The present invention relates to a kind of processing methods of Silicon Based Anode Materials for Lithium-Ion Batteries.
Background technique
Silica-base material is considered as a kind of very promising lithium since it is up to the high-energy-density of 4200mAh/g Ion battery cathode material, but its faced in practical applications serious problems such as charge and discharge when generate huge deformation (300%), cycle life is low low with first circle coulombic efficiency hinders its large-scale commercial application.And the weight solved these problems Want strategy first is that by sized nanostructures, the reason is that silicon materials can be buffered effectively when being reduced in size to nanoscale Volume benefit simultaneously improves cycle performance.
The method for usually preparing nano-structured silica-base material be related to high temperature or rigorous process such as high temperature vapour deposition process and Magnesium reduction process, these methods are not only at high cost, and have certain risk and a degree of environmental pollution.Therefore development green The preparation method of environmental protection and safety seems very significant.
Summary of the invention
Technical problem to be solved by the present invention lies in overcome the existing method for preparing nano-structured silica-base material not But it is at high cost, and have the defect of certain risk and a degree of environmental pollution, and provide a kind of strong using electric spark The processing method of change technology secondary operation Silicon Based Anode Materials for Lithium-Ion Batteries.
The present invention adopts the following technical solutions to solve above-mentioned technical problem:
A kind of processing method of Silicon Based Anode Materials for Lithium-Ion Batteries, it is characterized in that, the processing method includes as follows Step:
(1) silicon powder, assistant formation material are dispersed in volatile solvent, obtain solution A;The silicon powder accounts for the original The mass percent for expecting total amount is 5%~90%, and the raw material total amount refers to the quality sum of silicon powder and assistant formation material;
(2) acquired solution A is filtered, and drying and forming-film or club are to form combination electrode;
(3) combination electrode is fixed on the vibrator of electrospark impregnation machine, control operating voltage be 120V~ 250V, operating current are 0.1A~3A, and under inert atmosphere or reducing atmosphere, using conductive plate as substrate, after refinement It is deposited on substrate after combination electrode etching impact;
(4) material on base material will be deposited to scrape.
The principle of processing method of the invention is as follows: being that electricity is made in the non-uniform powder silicon materials of size and shape first Pole recycles the energy of electrospark impregnation machine excitation to large-sized silicon powder material, carries out secondary add under certain atmosphere Work refines it further, to form nano silicon material of uniform size.
In step (1), the partial size of the silicon powder is in the general category of this field, and preferably 100 μm hereinafter, be more preferably 1 μm or less.
In step (1), the assistant formation material is preferably sheet carbon material.The sheet carbon material is preferably For graphene and/or graphite flake.The thickness of the assistant formation material is in the general category of this field, and preferably 1 μm or less.
In step (1), the method for the dispersion is conventional method in that art, preferably ultrasonic disperse.
In step (1), the volatile solvent has this field conventional sense, is preferably comprised water, methanol, second One of alcohol, ethylene glycol, acetonitrile, ether and n-butanol are a variety of.
In step (1), the mass percent that the silicon powder accounts for the raw material total amount is preferably 50%.
In step (2), the suction filtration preferably carries out under vacuum conditions.
In step (3), the operating voltage of the electrospark impregnation machine is preferably 150V, and operating current is preferably 0.75A is hereinafter, but be not zero.
In step (3), the inert atmosphere or reducing atmosphere have this field conventional sense, preferably argon gas, or The mixed gas of the mixed gas or nitrogen and hydrogen of nitrogen or helium or argon gas and hydrogen, is more preferably argon gas.Wherein, The volume percent content of hydrogen is preferably 1%~40% in the mixed gas of the argon gas and hydrogen.The nitrogen and hydrogen The volume percent content of hydrogen is preferably 1%~40% in the mixed gas of gas.
In step (3), the conductive plate has this field conventional sense, is preferably comprised metal plate, graphite plate and carbon One of plate is a variety of, is more preferably graphite plate.
On the basis of common knowledge of the art, above-mentioned each optimum condition, can any combination to get each preferable reality of the present invention Example.
The reagents and materials used in the present invention are commercially available.
The positive effect of the present invention is that: processing method of the invention can at normal temperatures and pressures, by by size Electrode is made in larger and particle diameter distribution unevenness powder body material, uses electrospark impregnation machine for working equipment, further to material Refinement and uniform particle sizesization.The method of electric spark deposition process preparation nanometer silicium cathode provided by the invention is environmental-friendly, easy Easy, yield is high, and controllability is good, is suitble to large-scale production.
Detailed description of the invention
Fig. 1 is TEM transmission electron microscope photo of the silicon power raw material used in embodiment 1 under 50000 times of amplification.
Fig. 2 is TEM transmission electricity of the obtained nano silicon material of processing method by embodiment 1 under 100000 times of amplification Mirror photo.
Fig. 3 is grain size distribution of the silicon power raw material under 50000 times used in embodiment 1.
Fig. 4 is the grain size distribution for the nano silica-base material that the processing method of embodiment 1 obtains.
Specific embodiment
The present invention is further illustrated below by the mode of embodiment, but does not therefore limit the present invention to the reality It applies among a range.In the following examples, the experimental methods for specific conditions are not specified, according to conventional methods and conditions, or according to quotient The selection of product specification.
Embodiment 1
What the present embodiment was recorded is the processing side that the nano silica fume of 25~150nm wide distribution is further refined and homogenized Method.
50mg graphene and 50mg silicon powder are weighed, they are dispensed into water by two kinds of material use ultrasonic disperses.Then Using vacuum filtration, by two kinds of substances from being separated in aqueous solution and form membrane electrode after drying.Graphene and silicon are answered Film is closed on electrospark impregnation machine vibration device, control work atmosphere is argon gas, after connecting electrospark impregnation electromechanical source, adjusts work Making voltage is 150V, and current gear is 1 grade (corresponding current is 0~0.75A), uses graphite plate for substrate.By electrode slowly to base Material is close, and when the two is close enough, the electric spark of generation, which performs etching electrode, to be impacted and deposit on graphite plate substrate.It is deposited on Deposit on graphite plate is obtained target product.
Silicon transmission electron microscope results difference after initial silicon powder and electrospark impregnation machine secondary operation is as depicted in figs. 1 and 2.Thoroughly The device model of radio mirror is microscope JEM-2100, acceleration voltage 200KV.The enlargement ratio of Fig. 1 is 50000 times, Fig. 2's Enlargement ratio is 100000 times.
It can be seen from the figure that the partial size of initial silicon powder is in uneven distribution from 25nm~150nm, and pass through secondary operation Afterwards, partial size becomes uniformly, and particle refine after average grain diameter be 25nm.
The grain size distribution of silicon power raw material is as shown in Figure 3.The nano silica-base material obtained according to the processing method of embodiment 1 Grain size distribution it is as shown in Figure 4.As can be seen that after processing method of the invention, what is obtained is received for the comparison of Fig. 3 and Fig. 4 The partial size of rice silica-base material is in normal distribution, and homogenization degree greatly improves.
Embodiment 2
95mg graphene and 5mg silicon powder are weighed, they are dispensed into ethyl alcohol by two kinds of material use ultrasonic disperses.Then Using vacuum filtration, by two kinds of substances from being separated in aqueous solution and form membrane electrode after drying.Graphene and silicon are answered Film is closed on electrospark impregnation machine vibration device, control work atmosphere is hydrogen/argon gas (5%), and it is electromechanical to connect electrospark impregnation Behind source, adjusting operating voltage is 120V, and current gear is 1 grade (corresponding current is 0~0.35A), uses graphite plate for substrate.It will be electric Pole is slowly close to substrate, and when the two is close enough, the electric spark of generation, which performs etching electrode, to be impacted and deposit to graphite plate base On material.The deposit being deposited on graphite plate is obtained target product.The present embodiment can be refined and be homogenized journey Spend the nano silica-base material significantly improved.
Embodiment 3
10mg graphene and 90mg silicon powder are weighed, they are dispensed into n-butanol by two kinds of material use ultrasonic disperses. Then using vacuum filtration, by two kinds of substances from being separated in aqueous solution and form membrane electrode after drying.By graphene and For silicon composite membrane on electrospark impregnation machine vibration device, control work atmosphere is hydrogen/nitrogen (5%), connects electrospark impregnation After electromechanical source, adjusting operating voltage is 245V, and current gear is 1 grade (corresponding current fluctuation range is about 0~1.05A), is used Graphite plate is substrate.Electrode is slowly close to substrate, and when the two is close enough, the electric spark of generation performs etching impact to electrode And it deposits on graphite plate substrate.The deposit being deposited on graphite plate is obtained target product.The present embodiment can obtain To the nano silica-base material refined and homogenization degree significantly improves.
Embodiment 4~6
It is same as Example 1 that embodiment 4~6 prepares procedure of processing used in silicon based composite material, the difference is that Parameter described in table 1.
The parameter of 1 embodiment 4~6 of table
Embodiment 4~6 can be refined and be homogenized the nano silica-base material that degree significantly improves.
Comparative example 1
This comparative example investigate be in step (3) operating voltage of electrospark impregnation machine and operating current not in this hair It is bright limit " operating voltage as 120V~250V, operating current is the situation in 0.1~3A " range.The result shows that voltage or When electric current is lower than the numberical range, electric spark can not be formed;If being higher than the numberical range is easy breakdown substrate again.

Claims (11)

1. a kind of processing method of Silicon Based Anode Materials for Lithium-Ion Batteries, which is characterized in that the processing method includes following step It is rapid:
(1) silicon powder, assistant formation material are dispersed in volatile solvent, obtain solution A;The silicon powder accounts for raw material total amount Mass percent is 5%~90%, and the raw material total amount is the quality sum of silicon powder and assistant formation material;
(2) acquired solution A is filtered, and drying and forming-film or club are to form combination electrode;
(3) combination electrode is fixed on the vibrator of electrospark impregnation machine, control operating voltage is 120 V ~ 250V, work Making electric current is 0.1A~3A, and under inert atmosphere or reducing atmosphere, using conductive plate as substrate, the combination electrode is etched It is deposited on substrate after impact;
(4) material on base material will be deposited to scrape;
Wherein, in step (1), the assistant formation material is sheet carbon material, and the sheet carbon material is graphene and/or stone Ink sheet.
2. processing method as described in claim 1, which is characterized in that in step (1), the partial size of the silicon powder be 100 μm with Under.
3. processing method as claimed in claim 2, which is characterized in that the partial size of the silicon powder is for 1 μm hereinafter, the sheet Carbon material with a thickness of 1 μm or less.
4. processing method as described in claim 1, which is characterized in that in step (1), described is separated into ultrasonic disperse;Institute The volatile solvent stated includes one of water, methanol, ethyl alcohol, ethylene glycol, acetonitrile, ether and n-butanol or a variety of.
5. processing method as described in claim 1, which is characterized in that in step (1), the silicon powder accounts for the raw material total amount Mass percent be 50%.
6. processing method as described in claim 1, which is characterized in that in step (2), the suction filtration under vacuum conditions into Row.
7. processing method as described in claim 1, which is characterized in that in step (3), the work of the electrospark impregnation machine Voltage is 150V, and operating current is 0.1A ~ 0.75A.
8. processing method as described in claim 1, which is characterized in that in step (3), the inert atmosphere or reducing atmosphere For the mixed gas of the mixed gas or nitrogen and hydrogen of argon gas or nitrogen or helium or argon gas and hydrogen.
9. processing method as claimed in claim 8, which is characterized in that the body of hydrogen in the mixed gas of the argon gas and hydrogen Product degree is 1%~40%;In the mixed gas of the nitrogen and hydrogen the volume percent content of hydrogen be 1%~ 40%。
10. processing method as described in claim 1, which is characterized in that in step (3), the conductive plate be metal plate or Carbon plate.
11. processing method as claimed in claim 10, which is characterized in that in step (3), the carbon plate is graphite plate.
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CN101849306A (en) * 2007-09-06 2010-09-29 佳能株式会社 Method for producing lithium ion storage/release material, lithium ion storage/release material, electrode structure using the material, and electricity storage device
CN203333312U (en) * 2013-05-23 2013-12-11 苏州金瑞晨科技有限公司 Arc discharge device for preparing nanometer silicon powder

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CN203333312U (en) * 2013-05-23 2013-12-11 苏州金瑞晨科技有限公司 Arc discharge device for preparing nanometer silicon powder

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