CN106548967A - Bogey and semiconductor processing equipment - Google Patents
Bogey and semiconductor processing equipment Download PDFInfo
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- CN106548967A CN106548967A CN201510597182.XA CN201510597182A CN106548967A CN 106548967 A CN106548967 A CN 106548967A CN 201510597182 A CN201510597182 A CN 201510597182A CN 106548967 A CN106548967 A CN 106548967A
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- bogey
- different
- focusing ring
- regulating block
- described matrix
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Bogey and semiconductor processing equipment that the present invention is provided, including chuck and focusing ring, the upper surface of chuck are used to carry workpiece to be machined；Focusing ring is looped around the periphery of chuck；Also, the dielectric constant values of focusing ring zones of different in its circumferential direction are different, so that workpiece to be machined edge etch rate everywhere tends to uniform.The bogey that the present invention is provided, which can make workpiece to be machined edge etch rate everywhere tend to uniform, such that it is able to improve process uniformity.
Description
Technical field
The present invention relates to semiconductor equipment manufacture field, in particular it relates to a kind of bogey with
And semiconductor processing equipment.
Background technology
In the technical process of manufacture integrated circuit (IC) and MEMS (MEMS),
Particularly implementing plasma etching (ETCH), physical vapour deposition (PVD) (PVD), chemistry
In the technical process of vapour deposition (CVD) etc., often using bogey carrying and heat
The workpieces to be machined such as chip, provide Dc bias for chip and control the temperature of wafer surface.
Fig. 1 is the structural representation of typical bogey.As shown in figure 1, bogey
Including electrostatic chuck 11 and edge module.Wherein, electrostatic chuck 11 is used to adopt Electrostatic Absorption
Mode chip 12 is fixed thereon on surface, and electrostatic chuck 11 is also led using aluminium etc.
Electric metal material makes, for use as bottom electrode.Edge module is circumferentially positioned at electrostatic chuck 11
Periphery wall on, and including the focusing ring 13, basic ring 14 that are from top to bottom sequentially stacked and insulation
Ring 15, wherein, focusing ring 13 and basic ring 14 are looped around around electrostatic chuck 11；It is poly-
Dielectric of the burnt ring 13 by the processing of the materials such as quartz or ceramics, its dielectric constant and electrostatic chuck 11
Constant is different, and this causes electromagnetism magnetic field different by both impedances respectively, i.e. focusing ring
13 impedance is higher, and the impedance of electrostatic chuck 11 is relatively low, so as to electromagnetic field can prioritizing selection
The low path of impedance (path of electrostatic chuck 11), therefore, focusing ring 13 can play by
Plasma can be limited such that it is able to be formed by most of magnetically confined in its internal effect
On its internal border.Dead ring 15 is fixed on mounting fixing parts 16, for supporting electrostatic
Chuck 11, and dead ring 15 is using insulating materials making, to realize electrostatic chuck 11
It is electrically insulated with mounting fixing parts 16.Basic ring 14 is used to support focusing ring 13, and protects electrostatic
The periphery wall of chuck 11 is not by plasma etching.
Above-mentioned bogey is inevitably present problems with actual applications：
Due to above-mentioned focusing ring 13 by it is single, and uniform material process, its circle
Circumferential direction impedance everywhere is identical, and this causes 13 circumferencial direction of focusing ring everywhere to bottom electrode electricity
The impact of field is also identical, but, in actual applications, often there is Waffer edge each
The uneven situation of the etch rate at place, and existing focusing ring 13 does not possess and makes Waffer edge
Etch rate everywhere tends to uniform ability.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, it is proposed that one
Bogey and semiconductor processing equipment are planted, which can make workpiece to be machined edge quarter everywhere
Erosion speed tends to uniform, such that it is able to improve process uniformity.
A kind of bogey is provided to realize the purpose of the present invention, including chuck and focusing ring,
The upper surface of the chuck is used to carry workpiece to be machined；The focusing ring is looped around the chuck
Periphery；The dielectric constant values of focusing ring zones of different in its circumferential direction are different, so that institute
State workpiece to be machined edge etch rate everywhere and tend to uniform.
Preferably, the focusing ring includes matrix and multiple regulating blocks, the plurality of regulating block
It is arranged in described matrix, and is distributed in the zones of different in the circumference of described matrix；It is described
Matrix is respectively adopted the different insulating materials of dielectric constant values with the regulating block and makes.
Preferably, multiple installing holes are provided with the lower surface of described matrix, it is the plurality of
Installing hole is along described matrix circumferentially around at least one circle；Each regulating block is selectively disposed in
In one of installing hole, and the regulating block is engaged with the installing hole.
Preferably, each installing hole in same circle is uniformly distributed along the circumference of described matrix.
Preferably, the plurality of regulating block is made using same insulating materials；Or, institute
State multiple regulating blocks to make using at least two different insulating materials of dielectric constant values.
Preferably, the plurality of regulating block adopts at least two shapes；And/or, it is the plurality of
Regulating block adopts at least two sizes；And/or, week of the plurality of regulating block in described matrix
Distribution density upwards is different.
Preferably, the insulating materials includes quartz, ceramics, monocrystalline silicon or carborundum.
Preferably, the focusing ring includes matrix, and is formed on the lower surface of described matrix
There are multiple recesses, the plurality of recess is distributed in the zones of different in the circumference of described matrix.
Preferably, the plurality of recess adopts at least two shapes, and/or adopts at least two
Size.
Used as another technical scheme, the present invention also provides a kind of semiconductor processing equipment, its
Including reaction chamber and the bogey for setting within it, the bogey is used to carry described
Workpiece to be machined, the bogey employ the above-mentioned bogey of present invention offer.
The invention has the advantages that：
The bogey that the present invention is provided, its focusing ring for passing through to make to be looped around chuck periphery exist
Dielectric constant values of its circumferentially upper zones of different are different, can make workpiece to be machined edge everywhere
Etch rate tends to uniform, in other words, according to workpiece to be machined edge etch rate everywhere it
Between difference, the dielectric constant values of the circumferentially upper zones of different of focusing ring are set, so that focusing ring is all
Impact of the zones of different upwards to bottom electrode electric field can compensate for the difference of etch rate, so as to
Process uniformity can be improved.
The semiconductor processing equipment that the present invention is provided, which passes through using the above-mentioned of present invention offer
Bogey, can make workpiece to be machined edge etch rate everywhere tend to uniform, so as to can
To improve process uniformity.
Description of the drawings
Fig. 1 is the structural representation of typical bogey；
Fig. 2 is the equivalent circuit diagram that the bogey that the present embodiment is adopted is used as bottom electrode；
The sectional view of the bogey that Fig. 3 A are provided for first embodiment of the invention；
Fig. 3 B are the upward view of focusing ring in Fig. 3 A；
Fig. 3 C are the partial enlarged drawing of bogey in Fig. 3 A；
Fig. 4 A are the upward view of the focusing ring that second embodiment of the invention is adopted；
Fig. 4 B are the upward view of the focusing ring that third embodiment of the invention is adopted；And
Fig. 4 C are the upward view of the focusing ring that fourth embodiment of the invention is adopted.
Specific embodiment
To make those skilled in the art more fully understand technical scheme, tie below
The bogey and semiconductor processing equipment for closing accompanying drawing to provide the present invention is retouched in detail
State.
The bogey that the present invention is provided, which includes chuck and focusing ring, the upper surface of chuck
For carrying workpiece to be machined, the workpiece to be machined can be chip or can carry multiple chips
Pallet.Focusing ring is looped around the periphery of the chuck, and the focusing ring is different in its circumferential direction
The dielectric constant values in region are different, so that workpiece to be machined edge etch rate everywhere tends to equal
It is even.
Furtherly, Fig. 2 is that the bogey that the present embodiment is adopted is used as the equivalent of bottom electrode
Circuit diagram.Fig. 2 is referred to, bogey is connected with radio-frequency power supply as bottom electrode, and is focused on
Equivalent capacitance value of the ring in the loop of rf be：
Wherein, dielectric constant values of the ε for focusing ring, sectional areas of the s for focusing ring, d is poly-
The width of burnt ring.As focusing ring has equivalent capacity in the loop of rf, therefore focusing ring exists
A certain amount of RF energy can be consumed in the loop of rf.And, from formula, as s and d
One timing, wants to adjust the equivalent capacitance value of focusing ring, can only adopt the dielectric for changing focusing ring
Constant value ε, ε is bigger for the dielectric constant values, then equivalent capacity is bigger, so as to the radio frequency for consuming
Energy is bigger, and then can reduce etch rate；Conversely, dielectric constant values ε is less, then
Equivalent capacity is less, so as to the RF energy for consuming is less, and then can improve etch rate.
And the size of dielectric constant values ε is relevant with the material for making focusing ring.
Based on above-mentioned principle, the present invention devises a kind of focusing ring, and the focusing ring is in its circumference
The dielectric constant values of upper zones of different are different, so that workpiece to be machined edge etch rate everywhere
Tend to uniform, in other words, according to the difference between workpiece to be machined edge etch rate everywhere,
The dielectric constant values of the circumferentially upper zones of different of focusing ring are set, so that the difference in focusing ring circumference
Impact of the region to bottom electrode electric field can compensate for the difference of etch rate, such that it is able to improve work
Skill uniformity.
Below the specific embodiment of focusing ring is described in detail.Specifically, Fig. 3 A are
The sectional view of the bogey that first embodiment of the invention is provided.Fig. 3 B are focusing in Fig. 3 A
The upward view of ring.Fig. 3 C are the partial enlarged drawing of bogey in Fig. 3 A.See also
Fig. 3 A-3C, bogey include chuck 21 and edge module.Wherein, chuck 21 is used to incite somebody to action
Workpiece to be machined 22 is fixed thereon on surface, and chuck 21 is also using conducting metals such as aluminium
Material makes, for use as bottom electrode；Chuck 21 can be electrostatic chuck or mechanical chuck.
Edge module is circumferentially positioned on the periphery wall of chuck 21, and including being from top to bottom sequentially stacked
Focusing ring 23, basic ring 24 and dead ring 25, wherein, 24 equal ring of focusing ring 23 and basic ring
It is wound on around electrostatic chuck 11；Focusing ring 23 is made using insulating materials, its dielectric constant
Value is different from the dielectric constant values of the chuck 21 that conductive metallic material makes, and this causes electromagnetism magnetic
Field is different by both impedances respectively, i.e. the impedance of focusing ring 23 is higher, and chuck 21
Impedance it is relatively low, so as to electromagnetic field can the low path (path of chuck 21) of prioritizing selection impedance,
Therefore, focusing ring 23 can play the effect by most of magnetically confined inside which, so as to
Can be formed and can confine a plasma in its internal border.Dead ring 25 is fixed on peace
On dress fixture 26, for support chuck 21, and dead ring 25 adopts insulating materials system
Make, to realize that chuck 21 is electrically insulated with mounting fixing parts 26.Basic ring 24 is used to support poly-
Burnt ring 23, and the periphery wall of chuck 21 is protected not by plasma etching.
In the present embodiment, focusing ring 23 includes matrix 231 and multiple regulating blocks 27.Wherein,
Multiple installing holes 232 are provided with the lower surface of matrix 231, multiple installing holes 232 are along base
Body 231 circumferentially around two circle, i.e. multiple installing holes 232 are distributed in the following table of matrix 231
On face on two different circumference of radius, and each installing hole 232 in same circle is along matrix
231 circumference is uniformly distributed, as shown in Figure 3 B.Regulating block 27 is respectively adopted with matrix 231
The different insulating materials of dielectric constant values makes, and regulating block 27 is engaged with installing hole 232,
That is, the projection of shape of regulating block 27 and installing hole 232 on the axial cross section of installing hole 232
And consistent size, as shown in Figure 3 C；Also, each regulating block 27 is selectively disposed in
In one of installing hole 232, that is to say, that if desired set any one regulating block 27
The specified location in the circumference of matrix 231 is put, as long as the regulating block 27 is put into this then
In the installing hole 232 that specified location is located.
The structure of above-mentioned focusing ring 23 can be divided into following three kinds of setting sides according to specific needs
Formula：
The first set-up mode, each regulating block 27 are made using same insulating materials, and
Total quantity of the quantity of the regulating block 27 being arranged in installing hole 232 less than installing hole 232.
In this case, in all of installing hole 232, it is provided with a part of installing hole 232
Regulating block 27, and remaining installing hole 232 is hollow, no regulating block 27.According to being added
Difference between work edge of work etch rate everywhere, each regulating block 27 is respectively put into
In the installing hole 232 that each specified location is located, focusing ring 23 can be made to specify at each
Dielectric constant values at position are different from the dielectric constant values of remaining position, such that it is able to make focusing
Impact of the zones of different in 23 circumference of ring to bottom electrode electric field can compensate for the difference of etch rate
It is different, and then process uniformity can be improved.Further, since multiple installing holes 232 are distributed in base
In the whole circumference of body 231, thus difference that can be as the case may be, freely adjust phase
The position of the regulating block 27 answered, such that it is able to the further flexibility for realizing adjusting.
Second set-up mode, multiple regulating blocks adopt different at least two of dielectric constant values
Insulating materials makes, and the quantity of the regulating block 27 being arranged in installing hole 232 is less than installation
The total quantity in hole 232.The set-up mode is similar with above-mentioned the first set-up mode, and different
Part is only that：Each regulating block 27 is being respectively put into into the peace that each specified location is located
During in dress hole 232, it is also contemplated that the dielectric constant values of each regulating block 27, from
And can further increase the diversity of regulation.
The third set-up mode, multiple regulating blocks adopt different at least two of dielectric constant values
Insulating materials makes, and the quantity of the regulating block 27 being arranged in installing hole 232 is equal to and installs
The total quantity in hole 232, i.e. be provided with regulating block 27 in each installing hole 232.At this
In the case of kind, the difference between the dielectric constant values of each regulating block 27 can equally make to gather
Impact of the zones of different in 23 circumference of burnt ring to bottom electrode electric field can compensate for etch rate
Difference.
In actual applications, the above-mentioned insulating materials for making matrix and regulating block can be wrapped
Include quartz, ceramics, monocrystalline silicon or carborundum etc..
In addition, by making each installing hole 232 in same circle along the circumferential equal of matrix 231
Even distribution, can make matrix 231 when any regulating block 27 is not placed, in its circumference everywhere
Dielectric constant values it is identical.Certainly, in actual applications, it is also possible to according to different needs,
Each installing hole in same circle is made to be in uneven distribution in the circumference of matrix.
It should be noted that in the present embodiment, multiple installing holes 232 are along matrix 231
Circumferentially around two circles, but this is the invention is not limited in, in actual applications, multiple installations
Hole can also along matrix circumferentially around one circle, three circle or four circle more than.Additionally, installing hole
Freely can also set according to specific needs with the shape and size of regulating block.
The technical scheme of above-described embodiment is to arrange each regulating block using adjustable mode, but
It is to the invention is not limited in this, it would however also be possible to employ each regulating block is embedded in by fixed mode
In matrix, to meet the needs specified.The following is and the several of regulating block are arranged using fixed form
Specific embodiment.
Specifically, Fig. 4 A are the upward view of the focusing ring that second embodiment of the invention is adopted.Please
Refering to Fig. 4 A, in the present embodiment, multiple regulating blocks 27 are arranged in matrix 231, and point
Cloth is in the zones of different in the circumference of matrix 231.And, multiple regulating blocks 27 are in matrix
Distribution density in 231 circumference is different, so that the zones of different pair in 23 circumference of focusing ring
The impact of bottom electrode electric field can compensate for the difference of etch rate.
Fig. 4 B are the upward view of the focusing ring that third embodiment of the invention is adopted.Refer to figure
4B, in the present embodiment, multiple regulating blocks 27 are arranged in matrix 231, and are distributed in base
In zones of different in the circumference of body 231.And, multiple regulating blocks adopt at least two sizes,
So that impact of the zones of different in 23 circumference of focusing ring to bottom electrode electric field can compensate for etching
The difference of speed.
Fig. 4 C are the upward view of the focusing ring that fourth embodiment of the invention is adopted.Refer to figure
4C, in the present embodiment, multiple regulating blocks 27 are arranged in matrix 231, and are distributed in base
In zones of different in the circumference of body 231.And, multiple regulating blocks 27 adopt dielectric constant
At least two different insulating materials of value make, so that the zones of different in 23 circumference of focusing ring
Impact to bottom electrode electric field can compensate for the difference of etch rate.
In addition, multiple regulating blocks can also adopt at least two shapes, so that focusing ring 23 weeks
Impact of the zones of different upwards to bottom electrode electric field can compensate for the difference of etch rate.
Such as Fig. 4 A-4C, it is assumed that workpiece to be machined edge etch rate everywhere is respectively in I regions
Have differences and II regions and other regions between, then can be adopted by making multiple regulating blocks 27
Use at least two shapes；And/or, using at least two sizes；And/or, in described matrix
Distribution density in circumference is different；And/or, using different at least two exhausted of dielectric constant values
Edge material makes, and increases respectively or reduction dielectric of the focusing ring 23 in I regions and II regions is normal
Numerical value, so that impact of the focusing ring 23 to bottom electrode electric field can compensate for above-mentioned etch rate
Difference.
It should be noted that in above-mentioned first～fourth embodiment, being by matrix 231
It is upper to arrange multiple regulating blocks 27 to realize making the dielectric of the zones of different in 23 circumference of focusing ring normal
Numerical value is different, but the invention is not limited in this, in actual applications, may be omitted with
State regulating block, and only by the lower surface of matrix, and the difference being distributed in its circumference
Multiple recesses are formed in region, realizes making the dielectric constant of the zones of different in focusing ring circumference
Value is different, so that impact of the focusing ring to bottom electrode electric field can compensate for the difference of above-mentioned etch rate
It is different.It is easy to understand, the dielectric constant values of matrix itself and the dielectric constant values (vacuum) of recess
It is different.
In actual applications, at least two shapes can be adopted by making multiple recesses, and/or
Using at least two sizes, the dielectric constant values difference of the zones of different in focusing ring circumference is made.
In addition, the dielectric constant values of above-mentioned focusing ring regional can be with by the way of experiment
Obtain, specifically：First, detection using by it is single, and uniform material process
Focusing ring carries out technique, and the Waffer edge for obtaining etch rate everywhere, and according to chip side
The distribution situation of edge etch rate everywhere, the respective regions attempted in focusing ring circumference are arranged
Regulating block or recess, then carry out technique using the focusing ring again, and judge new gathering ring
The difference of etch rate before whether can compensate for.Above-mentioned experiment is repeated, until in aggregation
Till most suitable dielectric constant values distribution is obtained on ring.
In sum, the bogey that the present invention is provided, which passes through to make to be looped around chuck periphery
Focusing ring zones of different in its circumferential direction dielectric constant values it is different, workpiece to be machined can be made
Edge etch rate everywhere tends to uniform, in other words, according to workpiece to be machined edge everywhere
Difference between etch rate, arranges the dielectric constant values of the circumferentially upper zones of different of focusing ring, with
Impact of the zones of different in focusing ring circumference to bottom electrode electric field is made to can compensate for etch rate
Difference, such that it is able to improve process uniformity.
Used as another technical scheme, the embodiment of the present invention also provides a kind of semiconductor machining and sets
Standby, which includes reaction chamber and the bogey for setting within it, and the bogey is used to carry
Workpiece to be machined, and employ the bogey that above-mentioned each embodiment of the present invention is provided.
Semiconductor processing equipment provided in an embodiment of the present invention, which passes through above-mentioned using the present invention
The above-mentioned bogey that each embodiment is provided, can make workpiece to be machined edge etching everywhere
Speed tends to uniform, such that it is able to improve process uniformity.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and
Using illustrative embodiments, but the invention is not limited in this.For in the art
For those of ordinary skill, without departing from the spirit and substance in the present invention, can do
Go out various modifications and improvement, these modifications and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a kind of bogey, including chuck and focusing ring, the upper surface of the chuck are used for
Carry workpiece to be machined；The focusing ring is looped around the periphery of the chuck；Characterized in that,
The dielectric constant values of focusing ring zones of different in its circumferential direction are different, so that described be processed
Edge of work etch rate everywhere tends to uniform.
2. bogey according to claim 1, it is characterised in that the focusing ring
Including matrix and multiple regulating blocks, the plurality of regulating block is arranged in described matrix, and is distributed
In the zones of different in the circumference of described matrix；
Described matrix is respectively adopted the different insulating materials system of dielectric constant values with the regulating block
Make.
3. bogey according to claim 2, it is characterised in that in described matrix
Lower surface on be provided with multiple installing holes, circumferential ring of the plurality of installing hole along described matrix
Around at least one circle；
Each regulating block is selectively disposed in one of installing hole, and the regulating block
It is engaged with the installing hole.
4. bogey according to claim 3, it is characterised in that in same circle
Each installing hole is uniformly distributed along the circumference of described matrix.
5. bogey according to claim 2, it is characterised in that the plurality of tune
Locking nub is made using same insulating materials；Or,
The plurality of regulating block is using at least two different insulating materials systems of dielectric constant values
Make.
6. bogey according to claim 2, it is characterised in that the plurality of tune
Locking nub adopts at least two shapes；And/or,
The plurality of regulating block adopts at least two sizes；And/or,
Distribution density of the plurality of regulating block in the circumference of described matrix is different.
7. bogey according to claim 2, it is characterised in that the insulation material
Material includes quartz, ceramics, monocrystalline silicon or carborundum.
8. bogey according to claim 1, it is characterised in that the focusing ring
Including matrix, and multiple recesses are formed with the lower surface of described matrix, the plurality of recess
It is distributed in the zones of different in the circumference of described matrix.
9. bogey according to claim 8, it is characterised in that the plurality of recessed
Portion adopts at least two shapes, and/or adopts at least two sizes.
10. a kind of semiconductor processing equipment, which includes reaction chamber and the carrying for setting within it
Device, the bogey are used to carry the workpiece to be machined, it is characterised in that described to hold
Carry and put the bogey employed described in claim 1-9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510597182.XA CN106548967B (en) | 2015-09-18 | 2015-09-18 | Bearing device and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510597182.XA CN106548967B (en) | 2015-09-18 | 2015-09-18 | Bearing device and semiconductor processing equipment |
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| Publication Number | Publication Date |
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| CN106548967A true CN106548967A (en) | 2017-03-29 |
| CN106548967B CN106548967B (en) | 2020-04-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510597182.XA Active CN106548967B (en) | 2015-09-18 | 2015-09-18 | Bearing device and semiconductor processing equipment |
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| CN109119373A (en) * | 2017-06-23 | 2019-01-01 | 北京北方华创微电子装备有限公司 | pressure ring assembly and reaction chamber |
| CN110890305A (en) * | 2018-09-10 | 2020-03-17 | 北京华卓精科科技股份有限公司 | Electrostatic chuck |
| JP2021009932A (en) * | 2019-07-01 | 2021-01-28 | 東京エレクトロン株式会社 | Etching method and plasma processing apparatus |
| US20210249232A1 (en) * | 2020-02-10 | 2021-08-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for etching |
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| Publication number | Publication date |
|---|---|
| CN106548967B (en) | 2020-04-28 |
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