CN106547990A - The modeling method of the integrated wideband equivalent-circuit model of extra-high voltage direct current converter valve tower valve layer - Google Patents
The modeling method of the integrated wideband equivalent-circuit model of extra-high voltage direct current converter valve tower valve layer Download PDFInfo
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Abstract
The invention belongs to Electromagnetic Transient Analysis of Power System field, the modeling method of more particularly to a kind of wideband equivalent model for the analysis of extra-high voltage direct current converter valve tower interlayer transient voltage, specifically include, with a valve layer as unit, key componentses lumped parameter equivalent model and valve layer terminal capacitance model in valve layer are set up；Key componentses lumped parameter equivalent model in the valve layer and the valve layer terminal capacitance model are attached according to the actual electrical connection situation of valve tower, the final wideband equivalent model for the analysis of extra-high voltage direct current converter valve tower interlayer transient voltage is obtained.The present invention considers the impact of key componentses parameter and radome parasitic capacitance parameter voltage's distribiuting between valve layer in overvoltage effect lower valve, it is adaptable to the analysis extra-high voltage direct current converter valve tower interlayer transient voltage of precise and high efficiency under all kinds of overvoltage.
Description
Technical field
The invention belongs to Electromagnetic Transient Analysis of Power System field, more particularly to a kind of to be used for extra-high voltage direct current converter valve tower
The modeling method of the integrated wideband equivalent-circuit model of valve layer.
Background technology
DC converter valve tower is the nucleus equipment of DC transmission system, the structure by numerous IGCTs and related components and parts series connection
Into operationally being changed by AC and DC system condition is affected, and can be subjected to different types of overvoltage.In order to ensure direct current system
System can safe and stable operation, the voltage's distribiuting characteristic studied under various overvoltage in converter valve is very necessary.Overvoltage
Lower valve tower interlayer transient voltage sets up rational converter valve wideband model, in order to each as an important Consideration
It is also requisite especially which to be analyzed under fast modification voltage under class voltage form.
With extra-high voltage direct-current system electric pressure improve constantly and transmission capacity constantly lifted, converter valve volume is more
For huge, the topological structure of whole change of current valve system is more complicated.Extra-high voltage direct current converter valve system is by saturable reactor, brilliant lock
Multiple portions such as pipe, resistance-capacitance absorption loop, equalizing resistance loop, Controlling model, cooling system, corona shielding cover, suspension insulator
Divide and constitute, different components to be born the voltage's distribiuting of different sizes under various nominal situations and overvoltage operating mode.Valve module,
Valve layer, valve tower, surroundings wall, key equipment body and there is substantial amounts of parasitic capacitance each other, due to these parasitic capacitances
Exist, the identical parts voltage's distribiuting of diverse location can have differences.
Therefore, during wideband modeling is carried out to converter valve, both need the high frequency for considering key componentses in valve special
Property, need again to consider the impact that the voltage that radome parasitic capacitance parameter is caused is uneven.
Existing converter valve tower wideband equivalent model, builds overvoltage lower valve based on the wideband equivalent model of individual devices more
Tower interlayer transient voltage analysis model, and consider impact of the parasitic capacitance parameter to voltage's distribiuting between radome, but due to changing
In stream valve, components and parts are a lot, and traditional parasitic capacitance parameter extracting method has very high time complexity and spatial complex
Degree, causes modeling and simulation overlong time, and simulation efficiency is low, and the analysis to valve tower interlayer transient voltage is caused greatly not
Just.As document 1 (side is super. high voltage direct current converter valve module broadband properties are measured and Modeling Method [D]. North China Electric Power University,
2013) with 2 (L.Qi of document；Q.Shuai；X.Cui；C.Fang；H.Sun；w.guang；C.Gao,"Parameters
Extraction and Wideband Modeling of±1100kV Converter Valve,"in IEEE
Transactions on Power Delivery,vol.PP,no.99,pp.1-1)
Therefore, there is problems with and defect in prior art：
1st, the wideband equivalent model of extra-high voltage direct current converter valve tower interlayer transient voltage analysis of the prior art is based only on
The wideband equivalent model of individual devices, the running parameter collection for being not based on key componentses consider the high frequency of key componentses in valve
The impact of characteristic.
2nd, traditional parasitic capacitance parameter extracting method that prior art is adopted has very high time complexity and space
Complexity, causes modeling and simulation overlong time, and simulation efficiency is low, and the analysis to valve tower interlayer transient voltage is caused greatly
Ground inconvenience.
In order to improve the efficiency of DC converter valve tower interlayer transient voltage simulation analysis, and while consider crucial unit's device in valve
The high frequency characteristics of part, and the impact that radome parasitic capacitance parameter is brought, it would be highly desirable to propose that one kind can be realized modeling at a high speed and imitate
Very and with very high equivalence, high degree of accuracy is can guarantee that again and with actual physical meaning, it is adaptable to various forms of
The wideband equivalent modeling method of the lower extra-high voltage direct current converter valve tower interlayer transient voltage analysis of overvoltage effect.
The content of the invention
The invention aims to overcome the weak point of prior art, it is proposed that one kind can be realized modeling at a high speed and be imitated
Very and with very high equivalence, high degree of accuracy is can guarantee that again and with actual physical meaning, it is adaptable to various forms of
The modeling method of the wideband equivalent model of the lower extra-high voltage direct current converter valve tower interlayer transient voltage analysis of overvoltage effect.
The present invention proposes a kind of modeling method of the integrated wideband equivalent-circuit model of extra-high voltage direct current converter valve tower valve layer,
Characterized in that, the wideband equivalent model is used for the transient voltage for analyzing the DC converter valve tower interlayer, methods described tool
Body is comprised the following steps：With a valve layer as unit, the running parameter collection of key componentses in one valve layer is obtained, according to
The running parameter collection sets up key componentses lumped parameter equivalent model in valve layer；Valve layer end is set up according to valve layer terminal capacitance
Sub- capacitor model；By key componentses lumped parameter equivalent model in the valve layer and the valve layer terminal capacitance model according to valve
The actual electrical connection situation of tower is attached, and obtains the wideband for the analysis of extra-high voltage direct current converter valve tower interlayer transient voltage
Equivalent model.
In the present invention, in a valve layer, the running parameter collection of key componentses includes：The main inductance of saturable reactor, saturation
The equivalent resistance of the iron loss of reactor, IGCT level capacitance-resistance loop resistance, IGCT junction capacity.
In the present invention valve layer terminal capacitance include each valve layer over the ground equivalent parasitic capacitances, valve layer two ends equivalent parasitic capacitances,
Equivalent parasitic capacitances between valve layer.
In the present invention, in valve layer, the foundation of key componentses lumped parameter equivalent model is by crucial unit in converter valve
The model constituted by device and its basic electric parameter is carried out obtained from impedance frequency characteristic analyzes and simplify；Valve layer terminal electricity
Appearance is by obtaining to the analysis of Impedance Characteristic shown in high band by key componentses lumped parameter equivalent model in valve layer
Electric potential relation between valve tower each radome, and calculated using ANSYS business finite element software and obtain.
Valve layer terminal capacitance model is set up according to the valve layer terminal capacitance in the present invention, be based on valve tower radome each
Electric potential relation between conductor, by equivalent to the one valve of parasitic capacitance in one valve layer between each radome conductor
The two ends of layer, set up valve layer terminal capacitance model.
Can obtain suitable for the analysis of extra-high voltage direct current converter valve tower interlayer transient voltage with reference to above two parts content
Wideband equivalent model.
The beneficial effects of the present invention is：
1. the integrated wideband equivalent-circuit model of extra-high voltage direct current converter valve tower valve layer proposed by the present invention considers valve simultaneously
The high frequency characteristics of interior key componentses, and the impact that radome parasitic capacitance parameter is brought, can under all kinds of overvoltage
Accurate reflection valve tower interlayer transient voltage；
2. the wideband equivalent model that the present invention sets up with a valve layer as unit, by key componentses in converter valve and
The model constituted by its basic electric parameter carries out impedance frequency characteristic and analyzes and simplify, and sets up key componentses lump in valve layer
Parameter equivalent model, highly shortened the modeling and simulation time, improve the efficiency of simulation analysis；
3. the wideband equivalent model that the present invention sets up with a valve layer as unit, by between valve tower radome each conductor
Electric potential relation, by the equivalent two ends to valve layer of parasitic capacitance in valve layer between each radome conductor, set up valve layer terminal electricity
Molar type.It is still to regard each conductor as isolated conductor compared to traditional partition capacitance method, and then analyzes whole many conductors
The capacity effect of system, the present invention substantially reduce time and the computation complexity of extraction for the extraction of parasitic capacitance parameter.
Description of the drawings
Fig. 1 is valve module structural representation
Fig. 2 is saturable reactor equivalent model
Fig. 3 is that IGCT level is electrically connected schematic diagram
Fig. 4 be simplify before valve layer in key componentses lumped parameter equivalent model
Fig. 5 be simplify after valve layer in key componentses lumped parameter equivalent model
Fig. 6 is that key componentses lumped parameter equivalent model is special with the impedance frequency of 1 model of document in the valve layer of the present invention
Property comparing result
Fig. 7 is valve tower radome threedimensional model
Fig. 8 is valve module equivalent model
Fig. 9 is valve module radome voltage coefficient of association-frequency characteristic curve diagram
Figure 10 is the integrated wideband equivalent-circuit model of extra-high voltage direct current converter valve tower valve layer proposed by the present invention
Figure 11 is the integrated wideband equivalent-circuit model of extra-high voltage direct current converter valve tower valve layer proposed by the present invention and 2 mould of document
Type simulation result comparison diagram
Specific embodiment
Below in conjunction with the accompanying drawings, embodiment is elaborated.
A kind of modeling method of the integrated wideband equivalent-circuit model of extra-high voltage direct current converter valve tower valve layer proposed by the present invention,
The wideband equivalent model is used for the transient voltage for analyzing extra-high voltage direct current converter valve tower interlayer.Describe in detail as follows：
A kind of equivalent mould of wideband suitable for the analysis of extra-high voltage direct current converter valve tower interlayer transient voltage as shown in Figure 10
Type, wideband equivalent model proposed by the present invention is by key componentses lumped parameter equivalent model in valve layer and valve layer terminal capacitance mould
Type is collectively constituted.Wherein module VL is key componentses lumped parameter equivalent model in valve layer.
In described valve layer, key componentses lumped parameter includes the main inductance L of saturable reactorm, saturable reactor ferrum
The equivalent resistance R of consumptionm, IGCT level capacitance-resistance loop resistance Rd, IGCT junction capacity Cthy。
Described valve layer terminal capacitance includes each valve layer equivalent parasitic capacitances C over the groundig(i=1,2 .., 6), valve layer two ends
Equivalent parasitic capacitances Cii+1(i=1,2 .., 5), equivalent parasitic capacitances C between valve layerij(i=1,2 .., 4；J=i+2, i+3 ..,
6)。
Hereinafter, illustrated with one embodiment of the present of invention, right ± 1100kV extra-high voltage converter valve towers set up its interlayer
The wideband equivalent model of transient voltage analysis.± 1100kV converter valves are double valve, have 7 layers, and top layer and bottom are big respectively
Grading ring and radome.Middle 5 layers of each layer of valve arrangement are by the two converter valve module compositions placed arranged side by side, each valve module
Three-dimensional model structure it is as shown in Figure 1.Each valve module is made up of two valve modules, and valve module is by insulation system support member, crystalline substance
Brake tube press mounting structure, saturable reactor, damping resistance unit, damping capacitor unit, gate units, wire and water pipe are connected with each other
Composition, including 2 saturable reactors and 9 IGCT levels.Saturable reactor is connected on Thyristor anode tap, its base
This model is as shown in Figure 2.It is illustrated in figure 3 the electrical connection schematic diagram of IGCT level inside ± 1100kV converter valves.Consider
The characteristics of interlayer transient voltage is analyzed, it is desirable to which model proposed by the present invention can be in the case where sufficient accuracy be met as far as possible
The complexity of set up model is reduced, therefore work is modeled as unit with a valve layer here.
In valve layer key componentses lumped parameter equivalent model to set up process as follows：
Each valve layer of ± 1100kV converter valves is made up of two valve modules, by 8 saturable reactors altogether and 36 brilliant locks
Pipe level is in series.The saturable reactor being respectively shown according to such as Fig. 2,3 and the model structure of IGCT, respectively by 8 saturations
Reactor and 36 IGCT levels are connected according to actual electrical connection situation, you can obtain the model of a valve layer.By
It is cascaded structure on the whole in the model, the model can be simplified according to what is commonly used in engineering, i.e. saturable reactor mould
In type, resistance and inductance value are multiplied by 8, and capacitance is divided by 8；In IGCT level model, resistance and inductance value are multiplied by 36, capacitance divided by
36, after both are connected by obtain key componentses lumped parameter equivalent model in valve layer as shown in Figure 4.
When valve tower is subjected to impact voltage, as the frequency of the primary band of all kinds of surge voltages is all very high, can reach several
Hundred KHz even Shang megahertz.Therefore the model in Fig. 4 can further be simplified in high band range.For full
And reactor section, coil resistance RcuWith leakage inductance L0The resistance value of series connection is much smaller than main inductance LmWith iron loss equivalent resistance RmIt is in parallel
Resistance value, therefore can be by coil resistance RcuWith leakage inductance L0Carry out short-circuit process.Saturable reactor is equivalent to main inductance LmWith
The equivalent resistance R of iron lossmIt is in parallel.For IGCT level part, capacitance-resistance tank capacitance value is uF ranks, at higher frequencies its resistance
Resistance value of the anti-value much smaller than capacitance-resistance loop resistance connected in series, therefore electric capacity in capacitance-resistance loop can be carried out short circuit；This
When resistance R1And R2Parallel connection, and resistance R2Resistance value be significantly larger than R1, it is possible to by resistance R2Open circuit process is carried out, is finally hindered
Hold loop and can use resistance R1Carry out equivalent；Equalizing resistance RdcUp to 51 kilo-ohms of resistance, make open circuit process here.IGCT level etc.
Imitate as capacitance-resistance loop resistance RdWith IGCT junction capacity CthyIt is in parallel.Analyze by more than, Fig. 4 institutes representation model can be carried out into one
The simplification of step, obtains its equivalent model under the Impulse Voltage of high band, is after further simplifying as shown in Figure 5
Key componentses lumped parameter equivalent model in valve layer.
Key componentses lumped parameter equivalent model in valve layer as shown in Figure 5 is set up in Simulink, and by imitative
Its impedance frequency characteristic is obtained really.High voltage direct current converter valve module interior element thing will be based in its impedance frequency characteristic and document 1
The impedance frequency characteristic of the valve layer wideband model equivalent model set up by the wideband modeling method of reason mechanism is contrasted, contrast knot
Really as shown in fig. 6, both are sufficiently close in the impedance in high band, so as to demonstrate key componentses in the valve layer shown in Fig. 5
The correctness of lumped parameter equivalent model.
The extraction process of valve layer terminal capacitance is as follows：
Consider a n+1 conductor system, each conductor presses 0 → n serial numbers, and its corresponding current potential is respectivelyIt is potential reference point to choose No. 0 conductor, i.e.,It is a metal that numbering is the k conductor of 1,2 .., k
The unit conductor of component, they have electrical connection each other.Numbering is k+1, the current potential of the common n-k conductor of k+2 .., n
Suspend.
Association conductor 1,2 .., in k the current potential of any one conductor can by head and the tail two conductors current potential linear expression,
Being write as matrix form is：
Or be abbreviated as：
WhereinWithCurrent potential column vector is represented respectivelyWithR is defined as association
Conductor 1,2 .., the incidence coefficient matrix of k, its physical connection mode only between conductor are related, and the reality with each conductor
Current potential is unrelated.Can realize associating the decoupling of conductor using incidence coefficient matrix.
Based on above formula, the current potential column vector of whole many conductor systems can be carried out such as down conversion：
It is abbreviated as：
The capacitance matrix for assuming whole many conductor systems is β, and β can also be carried out under class according to association conductor and suspended conductor
The piecemeal of formula：
Wherein A is the k × k rank capacitance matrix related to association conductor, and B is the k related to association conductor and suspended conductor
× (n-k) rank capacitance matrixs, C are (n-k) × (n-k) the rank capacitance matrix related to suspended conductor.
Various based on more than, the electrostatic energy of system storage is represented by：
Can see, after the current potential column vector by many conductor systems is reduced to (n-k+2) dimension, system script n × n ranks
Capacitance matrix β in the presence of incidence coefficient matrix depression of order for (n-k+2) × (n-k+2) ranks capacitance matrix γ：
ELECTROSTATIC FIELD ENERGY based on many conductor systems can extract the capacitance parameter of coil block terminal and suspended conductor.
For the conductor in aforesaid n+1 conductor systems enters line renumbering：Script numbering is that the k association conductor of 1,2 .., k is regarded as
One two-port network, it is 1 and 2 that two terminal is numbered respectively, and corresponding terminal current potential is respectivelyWithOriginally numbering is
The n-k conductor of k+1, k+2 .., n is renumbered as 3,4 .., m, and corresponding current potential is numbered respectively and is(its
Middle m=n-k+2).According to above formula, the electrostatic energy of system storage is represented by：
Capacitance matrix γ after depression of order can be obtained by following two steps：
1) in making current potential row, column vector, i-th current potential isRemaining current potential sets to 0, and calculates the electrostatic of now many conductor systems
Energy：
Repeat the diagonal entry that said process is obtained capacitance matrix γ.
2) in making current potential row, column vector, i-th, j current potential is respectivelyRemaining current potential sets to 0, and calculates now many conductor systems
System electrostatic energy：
Repeat the off diagonal element that said process is obtained capacitance matrix γ.
The theoretical derivation and extracting method explanation of the equivalent terminal capacitance of conductor are associated according to above current potential, can be to valve layer end
Sub- electric capacity is extracted.
Design of the radome of ± 1100kV converter valves using split even pressure type, as shown in fig. 7, there is seven layers of radome
Structure, wherein middle five layers are equally spaced, angle radome totally 20, short radome totally 20, top are symmetrically distributed with two greatly
Grading ring, bottom symmetrical are distributed with two big radomes；Oblique busbar 6, horizontal busbar 5.Each conductor of radome is not lonely
Vertical conductor, but clamped down on by current potential and connect busbar and there is the interrelated relation of current potential.Each valve layer by two valve modules,
Connect 4 pieces of radomes, wherein angle radome totally 2, short radome totally 2 on the outside of each valve module altogether.Two angle radomes point
It is equal with the end current potential of the top current potential and last saturable reactor of first saturable reactor in the valve module of place,
Two short radomes are equal with the head end current potential of the 7th and 13 IGCT in the valve module of place respectively.And for adjacent two
Between individual valve module, the terminal angular radome of previous valve module passes through horizontal busbar with the head end angle radome of latter valve module
It is attached with oblique busbar, therefore both current potentials is equal.Top layer grading ring and bottom radome respectively with first and last
Individual angle radome isoelectric level.It follows that there is current potential incidence relation between 42 conductors of valve tower radome.
By foundation and the analysis process of key componentses lumped parameter equivalent model in valve layer, valve module is equivalent to such as figure
Valve module equivalent model shown in 8, is the equivalent of two saturable reactors of head end and 6 IGCT levels between its interior joint 1,2
Model, node 2,3 are the equivalent models of middle 6 IGCT levels, between its interior joint 3,4 be the saturable reactor of end two and
The equivalent model of 6 IGCT levels, then the current potential of four radomes in the valve module is equal with figure interior joint 1-4 respectively.
If the current potential of node 1-4 is respectively V1、V2、V3、V4.Under practical situation, when valve module two ends load surge voltage
When, as the presence of radome parasitic capacitance will cause V1-V2With V3-V4It is unequal.Here first ignore the impact of parasitic capacitance,
Think that this two-part voltage is equal in each valve module.
Defining valve module radome voltage coefficient of association s is
S=(V1-V2)/(V1-V4)
Thus the current potential of four radomes in valve module and the current potential incidence relation of valve module head and the tail radome can be drawn
It is as follows：
Here it is considered that two valve module terminal voltages in same valve layer are equal, be then generalized in valve layer, eight screens in valve layer
The electric potential relation expression formula for covering the current potential and valve layer head and the tail radome of cover is：
Finally show that the current potential incidence matrix between 42 conductors of valve tower radome is as follows：
From model theory relevant knowledge, V1-V2、V1-V4Both values are equivalent between valve module node 1,2 respectively
The resistance value Z of model12The resistance value Z of equivalent model between node 1,414It is directly proportional.
S=| Z12|/|Z14|
In Simulink, emulation obtains the resistance of equivalent model between equivalent model and node 1,4 between node 1,2 respectively
Anti- frequency characteristic, and both resistance values are divided by, acquisition s-f as shown in Figure 9 (valve module radome voltage coefficient of association-
Frequency) characteristic curve.When in valve module two ends loading frequency higher surge voltage, valve module radome voltage coefficient of association
Value should take the numerical value of figure medium-high frequency section, take s here for 0.49.Thus the association of valve tower radome conductor current potential can be obtained
Coefficient matrix.
DC converter valve tower radome threedimensional model is set up in Solidworks modeling softwares；Model is imported into ANSYS
Finite element software, according to valve tower radome conductor current potential incidence coefficient matrix is obtained, calculates the corresponding electricity of valve tower radome conductor
Place value simultaneously assigns corresponding current potential respectively, calculates the equivalent terminal capacitance matrix for obtaining 6 ranks.
With reference to above two parts content, by key componentses lumped parameter equivalent model in the valve layer for being obtained and valve layer end
Sub- electric capacity is connected according to the actual electrical connection situation of valve tower and in parallel, finally gives extra-high voltage direct-current as shown in Figure 10
The integrated wideband equivalent-circuit model of converter valve tower valve layer.Wherein VL represents key componentses lumped parameter equivalent model in valve layer,
Its model structure is presented in Fig. 4.
As shown in figure 11, simulate under steep wave surge voltage model that the present invention set up with document 2 model it is each
The Comparative result of layer voltage-to-ground waveform, both essentially coincide, it can thus be appreciated that the accuracy of the present invention is very high.
Model can be built using simulation software (such as PSCAD, Simulink etc.) during concrete application of the present invention, carry out correlation
Simulation analysis.
This embodiment is only the present invention preferably specific embodiment, but protection scope of the present invention is not limited thereto,
Any those familiar with the art the invention discloses technical scope in, the change or replacement that can be readily occurred in,
Should all be included within the scope of the present invention.Therefore, protection scope of the present invention should be with scope of the claims
It is defined.
Claims (6)
1. a kind of modeling method of the integrated wideband equivalent-circuit model of extra-high voltage direct current converter valve tower valve layer, it is characterised in that institute
Wideband equivalent model is stated for analyzing the transient voltage of the extra-high voltage direct current converter valve tower interlayer, the modeling method is specifically wrapped
Include：With a valve layer as unit, the running parameter collection of key componentses in one valve layer is obtained, according to the running parameter
Collection sets up key componentses lumped parameter equivalent model in valve layer；
Valve layer terminal capacitance model is set up according to valve layer terminal capacitance；
By key componentses lumped parameter equivalent model in the valve layer and the valve layer terminal capacitance model according to valve tower reality
Border electrical connection situation is attached, and obtains for the integrated wideband equivalent-circuit model of extra-high voltage direct current converter valve tower valve layer.
2. modeling method according to claim 1, it is characterised in that：The work ginseng of key componentses in one valve layer
Manifold includes：The main inductance of saturable reactor, the equivalent resistance of the iron loss of saturable reactor, IGCT level capacitance-resistance loop resistance,
IGCT junction capacity.
3. modeling method according to claim 1, it is characterised in that：It is described to be set up in valve layer according to the running parameter collection
Key componentses lumped parameter equivalent model, by being constituted to key componentses in converter valve and its basic electric parameter
Model is carried out obtained from impedance frequency characteristic analyzes and simplify.
4. modeling method according to claim 1, it is characterised in that：Described valve layer terminal capacitance includes each valve layer over the ground
Equivalent parasitic capacitances between equivalent parasitic capacitances, valve layer two ends equivalent parasitic capacitances, valve layer.
5. modeling method according to claim 1, it is characterised in that：The valve layer terminal capacitance is by closing in valve layer
Analysis of Impedance Characteristic that key components and parts lumped parameter equivalent model is shown in high band is obtained between valve tower each radome
Electric potential relation, and using ANSYS business finite element software calculate obtain.
6. modeling method according to claim 5, it is characterised in that：It is described that valve layer is set up according to the valve layer terminal capacitance
Terminal capacitance model, is based on the electric potential relation between valve tower radome each conductor, by each shielding in one valve layer
The two ends of equivalent to the one valve layer of parasitic capacitance between cover conductor, set up valve layer terminal capacitance model.
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| CN108712058B (en) * | 2017-04-12 | 2021-10-01 | 全球能源互联网研究院有限公司 | Shielding type voltage-sharing circuit |
| CN107194102B (en) * | 2017-06-05 | 2020-08-21 | 华北电力大学 | Series voltage balancing method for high-voltage flexible direct-current converter valve supporting insulator |
| CN107194102A (en) * | 2017-06-05 | 2017-09-22 | 华北电力大学 | High pressure flexible direct current converter valve supports insulative substring joins voltage balancing method |
| CN107679285A (en) * | 2017-09-08 | 2018-02-09 | 华北电力大学 | Extra-high voltage direct current converter valve Two-port netwerk circuit |
| CN108111029A (en) * | 2017-12-20 | 2018-06-01 | 全球能源互联网研究院有限公司 | A kind of change of current valve tower of saturable reactor centralized arrangement |
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| CN108667006A (en) * | 2018-04-13 | 2018-10-16 | 中国南方电网有限责任公司超高压输电公司检修试验中心 | Single valve number wideband failure risk analysis method for promoting converter valve reliability |
| CN108494269A (en) * | 2018-04-17 | 2018-09-04 | 全球能源互联网研究院有限公司 | A kind of converter valve module built in arrester |
| CN110535354A (en) * | 2018-05-25 | 2019-12-03 | 全球能源互联网研究院有限公司 | A kind of compact intelligent converter valve |
| CN110535354B (en) * | 2018-05-25 | 2020-07-24 | 全球能源互联网研究院有限公司 | Compact intelligent converter valve |
| CN109507496A (en) * | 2018-10-17 | 2019-03-22 | 华中科技大学 | A kind of method of voltage transformer branch overcurrent under emulation transient state |
| CN109446747A (en) * | 2018-12-28 | 2019-03-08 | 国网福建省电力有限公司 | A kind of three-dimensional valve tower method for automatic modeling based on CIM model and CAD |
| WO2021023369A1 (en) * | 2019-08-05 | 2021-02-11 | Abb Schweiz Ag | Converter arrangement |
| US11695331B2 (en) | 2019-08-05 | 2023-07-04 | Hitachi Energy Switzerland Ag | Converter arrangement |
| CN112269066A (en) * | 2020-09-14 | 2021-01-26 | 中国南方电网有限责任公司超高压输电公司广州局 | Method for measuring non-disconnection parameters of core device of voltage-sharing capacitor circuit of converter valve |
| CN112269066B (en) * | 2020-09-14 | 2022-05-13 | 中国南方电网有限责任公司超高压输电公司广州局 | Method for measuring non-disconnection parameters of core device of voltage-sharing capacitor circuit of converter valve |
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