CN106536093A - Additive manufacturing with laser and gas flow - Google Patents

Abstract

An additive manufacturing system includes a platen, a feed material dispenser apparatus configured to deliver a feed material onto the platen, a laser source configured to produce a laser beam during use of the additive manufacturing system, a controller configured to direct the laser beam to locations on the platen specified by a computer aided design program to cause the feed material to fuse, a gas source configured to supply gas, and a nozzle configured to accelerate and direct the gas to substantially the same location on the platen as the laser beam.

Description

Using the increasing material manufacturing of laser and gas stream

Prioity claim

The application advocates the Application No. 62/ submitted on July 18th, 2014 according to 35 119 (e) moneys of United States Code No. The priority of 026,545 U.S. Patent application.

Technical field

The present invention relates to increasing material manufacturing, also known as 3D printing.

Background technology

Increasing material manufacturing (AM), also known as entity free shape manufacture (solid freeform manufacturing) or 3D printing, it is intended that by original material (generally powder, liquid, suspended substance or melting solid) with a series of two dimensions Layer or cross section are set up any manufacture of the object of three dimensions and are processed.Compare down, traditional mechanical technology is related to deduct process And produce the object that base material cuts out, such as wood, plastics or metal derby.

Can be processed using various increasing materials in increasing material manufacturing.The difference of various process is：Sedimentary is producing into Compatible material used in the mode of product object and each process.Certain methods melt or softener material is to produce layer, for example, Selective laser melting (SLM) or direct metal laser sintering (DMLS), selective laser sintering (SLS), fused glass pellet (FDM), and other methods using different technologies solidify fluent material, for example, stereolithography art (Stereolithography, SLA)。

The process of the little microgranule of melting is sintered to produce object, little particulate such as powder.Sintering is usually directed to heating powder End.When powdered material is heated to sufficient temp in sintering processes, side of the atoms permeating in powder particle across particle Boundary, molten particles is together forming solid members.Compare with fusing, the powder being used in sintering is not required to reach liquid phase.By In sintering temperature without necessarily achieving the fusing point of material, sinter and be typically used in dystectic material, such as tungsten and molybdenum.

Both sintering and fusing can be all used in increasing material manufacturing.The material for using determines which kind of process.Amorphism Solid, such as acronitrile-butadiene-styrene (ABS), actual is super cold liquid, and will not actually be melted；Because fusing It is related to by the phase transformation of solid-state to liquid.Therefore, selective laser sintering (SLS) is the relevant treatment for ABS, and selectivity Laser fusion (SLM) is used in crystal and semi-crystalline materials, such as nylon and metal, with detached fusing/adiabatic condensation temperature and The experience fusing during SLM.

Using laser beam as sinter or melt powdered material energy source legacy system generally in powdered material Material one layer in one selection point on guided laser beam and selectively the raster scanning laser beam to across the position of this layer.Once On ground floor, institute is selectively sintered or melts in position, in the new powdered material layer of the deposited on top of the layer for completing, and Repeat the process layer by layer, until generating required object.

Also can the use of electron beam be that the sintering in material or fusing are caused in energy source.Again, cross-layer is to electronics Beam raster scanning is completing the process of certain layer.

The content of the invention

In an aspect, increasing material manufacturing system is included：Workbench；Supplying material distributor, the supplying material distribute Device is configured to conveying supplying material layer and covers the workbench；Lasing light emitter, the lasing light emitter are configured to produce laser beam；Control Device, the controller are configured to cause the laser beam to melt at the position of the data defined being stored in computer readable medium Melt the supplying material；And source of the gas, the source of the gas be configured to supply gas；And nozzle, the nozzle is configured to accelerate and guides should Gas is to position substantially identical with the laser beam on the workbench.

Implementation can include one or more following characteristics.The nozzle is configured to accelerate the gas to hasten to Supersonic Degree.The nozzle includes de Laval nozzles.The laser beam and the gas send to clash into being somebody's turn to do on the workbench along common axis Supplying material.Electrode and antielectrode can be configured to the ionizing gas to form plasma.Pipeline can have first end and Second end, near the laser instrument, second end is near the workbench, and wherein guides the laser via the pipeline for the first end. The nozzle can be placed on second end of the pipeline.The source of the gas be configured to inject the gas enter the pipeline this first End.

In another aspect, increasing material manufacturing method is comprised the steps of：Distribution supplying material layer covers workbench；Guiding swashs Light beam is heating the supplying material at the position of the data defined being stored in computer readable medium；And guiding gas material The position substantially identical with the laser beam is expected to the workbench.

Implementation can include one or more following characteristics.The gas material can include ion.The gas material is made Chemical reaction at the position on the workbench.The gas material is accelerated by nozzle, and the nozzle is placed in the gas material In path.The gas material is configured to the surface finish (surface finish) for changing the supplying material.Supplying material Surface finish can become more coarse or more smooth.The gas material includes etchant, and the etchant is configured to remove the supply Material.Second gas material flow to cause the different chemical reactions of second position on the supplying material.In the supplying material The gas material is guided at one region of layer, surface of the region corresponding to the object to be manufactured, to be formed on the object not Congruent coating.

In another aspect, increasing material manufacturing method is comprised the steps of：Distribution ground floor supplying material covers workbench；Plus The ground floor supplying material of the first position of the data defined being stored on the hot workbench in the computer readable medium, To melt the part of the ground floor supplying material, a part for the melting supplying material is etched while the supplying material of the melting is protected It is held on workbench；Distribution second layer supplying material covers etched on the workbench and melting supplying material；Heating storage The second layer supplying material of the second position of the data defined in the computer readable medium.

In another aspect, increasing material manufacturing system is included：Workbench；Supplying material distributor, the supplying material distribute Device is configured to conveying supplying material layer and covers the workbench；Laser instrument, the laser instrument are configured to produce laser beam；Control Device, the controller are configured to cause the laser beam to melt at the position of the data defined being stored in computer readable medium Melt the supplying material；And source of the gas, the source of the gas is configured to produce plasma, and plasma essence is across the supplying material layer All extend and produce the ion being directed on the supplying material.

Implementation can provide one or more advantages below.Plasma source can be configured to produce plasma Body, while laser-light beam melts supplying material.Controller is configured to the gas flow rate of base control from level to level to chamber, The plasma is produced in the chamber by the plasma source.Controller is configured to be delivered to base control from level to level The gas componant of chamber, produces the plasma in the chamber by the plasma source.

Implementation can provide one or more advantages below.The thing of (XYZ controls) increasing material manufacturing is controlled selectively The chemical composition of all voxels is directed in body.Can be improved using the melting of supplying material simultaneously or modification of surfaces finishing is produced Raw fabricated part.Can sequentially realize increasing material using same apparatus and deduct manufacture.

The details of one or more embodiments of the present invention is proposed in accompanying drawing and lower section description.The present invention its In terms of it, feature and advantage from specification and drawings, and will be manifested from Claims scope.

Description of the drawings

Schematic diagrams of the Figure 1A for increasing material manufacturing system.

Schematic diagrams of the Figure 1B for increasing material manufacturing system.

Fig. 1 C are the schematic diagram of the system for being incorporated to nozzle.

Fig. 2A is the schematic diagram of an allotter.

Schematic diagrams of Fig. 2 B for line allotter.

Schematic diagrams of Fig. 2 C for array allotter.

Fig. 2 D are the schematic diagram of the silicon hole in two different operation modes.

Fig. 3 A illustrate the different melting supplying materials of the resolution characteristics with change.

Fig. 3 B illustrate the schematic diagram of supplying material layer.

Fig. 3 C illustrate the schematic diagram of increasing material manufacturing system.

Similar reference markss in multiple accompanying drawings indicate similar element.

Specific embodiment

Part is manufactured by 3D printing, the wherein material composition of part passes through the part and spatially changes, for example, heavy Change in long-pending monolayer, will be Worth Expecting.It is conceptive, different supplying materials can be deposited in the different piece of part.So And, for some manufacture situations, this may not be actual, or may need extra discretion in the change of material composition.In this The method and device of disclosure is directed to the every of the supplying material of deposition during allowing one or more steps that increasing material manufacturing is processed One layer of adjustment that chemical modification and/or surface finish occur.Compare down, using the tradition system of the energy from such as lasing light emitter System causes supplying material to melt, for example, by changing thing phase or passing through to melt and solidify again supplying material, and need not be any Chemical reaction.

Figure 1A illustrates the schematic diagram of exemplary increasing material manufacturing system 100.System 100 includes shell 102 and by shell 102 Closing.For example, shell 10 can allow to maintain vacuum environment in the chamber 103 of the enclosure, or, chamber 103 it is interior Can filter to remove the gas or admixture of gas of particle, otherwise may be used for the pure gas of essence or admixture of gas, such as Jing in portion By chamber opening to air.Vacuum environment can lower defect through air filtration body during manufacture part.For some realization sides Formula, chamber 103 can be maintained at positive pressure, i.e. more than atmospheric pressure.This can help prevent external air to enter chamber 103.

Increasing material manufacturing system 100 includes allotter, covers workbench 105 to convey powder bed, for example, on workbench Or to the bottom on workbench.

The upright position of workbench 105 can be controlled by piston 107.After distributing and melting each powder bed, piston 107 can Workbench 120 and any powder bed on workbench 120 are reduced with the thickness of a layer so that component is ready to receive new powder Last layer.

Workbench 105 can be sufficiently large to receive the manufacture of large scale industrial part.For example, workbench 105 can be at least 500mm width, for example, such as 500mm takes advantage of the rectangle of 500mm.For example, workbench can be at least 1 meter wide, and for example, 1 is flat Square rice.

In some implementations, allotter can include the Distribution of materials device assembly that can be positioned over above workbench 105 104.Dispenser assembly 104 can include opening, for example, convey supplying material through the opening throughout workbench 105 by gravity. For example, dispenser assembly 104 can include reservoir 108, to accommodate supplying material 114.The release of supplying material 114 is by gate 112 controls.When change allotter to specify by CAD compatible files position when, transmit electronic control signal to gate 112 with Distribution supplying material.

Can be by one of them of piezoelectric printhead, and/or pneumatic operated valve, MEMS (MEMS) valve, electromagnetic valve or magnet valve Or more are providing the gate 112 of dispenser assembly 104, discharge from dispenser assembly 104 to control supplying material.It is three-dimensional The spatial resolution of pixel is higher, and the volume of voxel is less and therefore the supplying material quantity distributed of each voxel It is fewer.

Selectively, allotter comprising the reservoir placed adjacent to workbench 105, and can be flatly moved (parallel to work Make platform surface) with promote from reservoir supplying material across workbench 105 cylinder.

The control of controller 130 is connected to the drive system (not shown) of dispenser assembly 104 or cylinder, for example, linear to cause Dynamic device.Drive system is configured such that during operation dispenser assembly or cylinder can be parallel to the top surfaces of workbench 105 Move back and forth (along the direction indicated by arrow 106).For example, dispenser assembly 104 or cylinder can be supported on and extend across On the track of chamber 103.Or, dispenser assembly 104 or cylinder can be maintained in fixed position, at the same workbench 105 by Drive system is moved.

In the case of the opening that dispenser assembly 104 is carried through comprising supplying material, when dispenser assembly 104 is across work Make platform scanning, dispenser assembly 104 can deposit supplying material at suitable position according to a print pattern on workbench 105, The print pattern can be stored in non-transient computer readable medium.For example, print pattern can be stored as file, for example, The compatible file of CAD (computer aided design) (CAD), then this document be associated in controller 130 processor read.Work as distribution When device is converted into the position by the compatible file defineds of CAD, electronic control signal is then sent to gate 112 to distribute Supplying material.

In some implementations, dispenser assembly 104 includes the multiple openings that can distribute through supplying material.It is each to be open Can have can independent control gate so that supplying material can be independently controlled through the conveying of each opening.

In some implementations, multiple openings extend across the width of workbench, for example, perpendicular to dispenser assembly On the direction of 104 movement 106.In the case, in operation, dispenser assembly 104 can be scanned with single on direction 106 Scan across workbench 105.In some implementations, for alternate layer, dispenser assembly 104 can in alternate directions across Workbench 105 is scanned, and for example, on direction 106, first scans and second scan in the opposite direction.

Selectively, for example, multiple openings extend without across workbench width, and distribution system 104 can be configured such that distribution Device assembly 104 is moved in the two directions to scan across workbench 105, for example, across 105 raster scanning of workbench, to convey For one layer of material.

Selectively, dispenser assembly 104 can one layer of supplying material of only depositing homogeneous cover workbench.In the case, The independent control of single opening and the print pattern being stored in non-transient computer readable medium are all unnecessary.

Alternatively, more than one supplying material can be provided by dispenser assembly 104.In the case, each supplying material can It is stored in separate reservoir, the reservoir has the regulating gate of oneself and can be individually controlled to discharge workbench On 105 by cad file defined position respective supplying material.In the manner, can be using two or more not With chemical substance producing the part of increasing material manufacturing.

Supplying material can be that the dry powder of metal or ceramic particle, the metal of liquid suspension or ceramic powders or slurry are outstanding Floating material.For example, for the allotter using piezoelectric printhead, supplying material is usually the particle that liquid suspends.For example, divide Powder can be conveyed in carrier fluid with device assembly 104, for example, high-vapor-pressure carrier, such as isopropanol (IPA), ethanol or N- first Two ketopyrrolidines of base (N-Methyl-2-pyrrolidone, NMP), to form layer of powder material.Carrier fluid can be directed to the layer Vaporize before the sintering step.Or, using dry distribution mechanism, for example, aided in by ultrasonic wave disturbance and pressurized inert gas Nozzle array, to distribute the first particle.

The example of metallic includes metal, alloy and intermetallic alloy.For metallic examples of materials comprising titanium, Various alloys of rustless steel, nickel, cobalt, chromium, vanadium and these metals or intermetallic alloy.The example of ceramic material is aoxidized comprising metal Thing, such as cerium oxide, aluminium oxide, silicon dioxide, aluminium nitride, silicon nitride, the combination of carborundum or these materials.

Alternatively, system 100 can be overlying on work to compress and/or smooth deposition comprising compression and/or horizontal mechanism The supplying material layer of platform 105.For example, system can include the cylinder or leaf that can be moved parallel to table surface by drive system Piece, for example, linear actuatorss.Cylinder or blade are set to compress and/or smooth supply relative to the height of workbench 105 The outermost layer of material.Cylinder is rotatable when across movable workbench.

During manufacture, gradually deposit and sinter or melt supplying material layer.For example, supplying material 114 is by allotter group Part 104 distributes to form the layer 116 of contact workbench 105.Subsequently the supplying material layer of deposition can form additional layer, each attached Plus layer be supported on bottom.

After each layer deposition, outermost layer is processed to cause at least some layer of melting, for example, by sintering or passing through Melt and solidify again.In layer, do not have the supplying material region for melting to may be used to the part of Support cover layer.

System 100 includes thermal source, and the thermal source is configured to supply enough heat to supplying material layer to cause powder melts. It is allocated at pattern, power source can heat whole layer simultaneously, for example, the gas discussed in such as lower section or ion in supplying material After process.For example, power source can be the irradiator array radiation that is placed in above workbench 105 heat supplying material layer.Or Person, if supplying material layer is equably deposited on workbench 105, power source can be configured to heat by being stored in computer-readable Take the position of the print pattern defined in medium, the compatible file of print pattern such as CAD (computer aided design) (CAD), to cause The powder melts of these positions.

For example, thermal source can be lasing light emitter 126, to produce laser beam 124.The laser beam 124 for carrying out self-excitation light source 126 is drawn It is directed at the position of print pattern defined.For example, across 105 raster-scanned laser beam 124 of workbench, and laser power is in each position Place is controlled to determine whether a specific three dimensional pixel melts.Laser beam 124 also can be across being swept by the position of cad file defined Retouch, with the supplying material being optionally melted at these positions.In order to provide the scanning of the laser beam 124 across workbench 105, In 124 horizontal displacement of laser beam, workbench 105 can remains stationary.Or, the laser beam 124 in 105 horizontal displacement of workbench Can remains stationary.

The laser beam 124 for carrying out self-excitation light source 126 is configured to raise by the temperature in the supplying material region of bombardment with laser beams. In some embodiments, the region of supplying material is directly below laser beam 124.

Workbench 105 extraly can be heated to the cardinal temperature of the fusion point less than supplying material by heater, for example, by The heater heating being embedded in workbench 105.In the manner, laser beam 124 can be configured to provide less temperature and increase The supplying material of fusion sediment in addition.The conversion of more too small temperature contrast can be such that supplying material will be processed more quickly.Example Such as, the cardinal temperature of workbench 105 can be about 1500 degrees Celsius and laser beam 124 can cause about 50 degrees Celsius of temperature increase.

The laser beam 124 for carrying out self-excitation light source 126 may be incorporated into laser and ion source 131.Laser and ion source 131 is constructed makes Point substantially identical with laser beam 124 on workbench 105 must be directed to from the ion of plasma 148.

In some implementations, laser and ion source 131 are coaxial dot laser and plasma source 131a.That is, laser Beam 124 and plasma 148 are sent along a common axis by source 131a.In this embodiment, when laser beam 124 is scanned and The position to the print pattern defined for storing into the compatible file of CAD (computer aided design) (CAD) is guided to melt supplying material, Plasma 148 can be directed simultaneously and be delivered to identical position on workbench.In some implementations, laser beam 124 And plasma 148 can be overlapped in a horizontal plane.

Laser and ion source 131 and/or workbench 105 may be coupled to actuator, for example, a pair of linear actuatorss Jing Construction is to provide the movement in vertical direction, relative between offer laser and ion source 131 and/or workbench 105 to be able to It is mobile.Controller 130 may be connected to actuator to cause across supplying material layer scanning laser beam 124 and plasma 148.

On-axis point plasma source 131a can include pipeline 135, for example, the gas of laser beam 124 and offer plasma The pipe propagated across by both.For example, on-axis point plasma source 131a can be included and be there is the hollow outer of the first diameter to lead Body 132 and the hollow inner conductor 134 with the Second bobbin diameter less than the first diameter.Hollow inner conductor is placed on hollow outer conductor It is interior.In some implementations, hollow inner conductor 134 extends closer to workbench compared with hollow outer conductor 132.However, at some In implementation, system only uses single pipe.

Laser beam 124 may propagate through pipeline 135, and for example, the hollow inside through interior conduit 134 is towards workbench 105 Surface.Source of the gas 138 supplies the hollow inside of gas to interior conduit 134 via gas delivery system 136.Gas delivery system 136 comprising the valve controlled by controller 130 so that gas is discharged into interior conduit 134 by source of the gas 138.The example of gas is included Nitrogen, argon, helium, oxygen and titanium fluoride (Ti_xF_y)。

From the end 143 of the pipeline 135 farther out of workbench 105, for example, the end 143 of inner wire 134 is whole by window portion 140 Only, window portion 140 is transparent for the wavelength of laser beam 124.Window portion 140 assists in keeping the gas in inner wire 134.Laser Beam 124 can propagate across window portion 140 into inner wire 134 by lasing light emitter 126.In some implementations, gas delivery system 136 supply gases are with through the entrance in window portion 140.In some implementations, gas delivery system 136 is supplied gas to wear The entrance crossed in pipe side.

In some implementations, inner wire 134 is electrically coupled to outer conductor 132.For example, conductor plate 141 can electricity Property ground connection hollow outer conductor 132 to hollow inner conductor 134.Conductor plate 141 can be located at the pipeline end from workbench 105 farther out End 143.

Alternating current (AC) (for example, radio frequency or microwave radiation) power source 142 conveys electric field to pipeline via electrical connection 144 135, for example, outer conductor 132 and/or inner wire 134 and/or may occur in which any electrode in pipeline 135.Can be with a distance Electrical connection between AC power sources 142 and pipeline 135, short end of the distance away from on-axis point plasma source 131a are provided 143.Figure 1B illustrates two separate power sources 142, and each power source 142 is connected to electrode and antielectrode via electrical connection 144 133.Figure 1A illustrates two separate power sources 142 and 150, wherein the first power source 142 is connected to pipeline 135 and the second power Source 150 is connected to workbench 105.

The end of the pipeline 135 of closer workbench 105, for example, outer conductor 132 can be opening, or in addition to hole Can be off, the hole allows gas and laser beam 124 by going to workbench 105.In some implementations, relative to carrying The end of the short end of the on-axis point plasma source of conductor plate 141 is opening 151.Opening 151 can be do not have machinery Be connected to the end section of pipeline 135 of hollow inner conductor 134 (for example, hollow outer conductor be 132).In some implementations In, plasma 148 can be produced in pipeline 135, as described in lower section.In some implementations, can produce at opening 151 Raw plasma.In these embodiments, the electric field of enough grades can be applied to outer conductor 132 and inner wire 134, to produce From birth from the plasma of neutral gas, the neutral gas is supplied by source of the gas 138.

Plasma is that (that is, the electric charge summation of plasma is generally for the electric neutrality medium of positively charged and negatively charged particle Zero).For example, when by 138 the supply of nitrogen of source of the gas, nitrogen becomes ionizing to produce N₂ ⁺Or N⁺.This by produced by ionizing A little positive charged ions and electronically form plasma 148.It is heavy to contact that plasma 148 leaves on-axis point plasma source 131a Supplying material 114 of the product on workbench 105.

From the implementation being illustrated in Figure 1A, flow through by arbitrary conductor for maintaining high potential in electric current, entered During the neutral gas supplied by source of the gas 138, heating region is produced around conductor 132 and 134 at opening.At some In implementation, electric field is produced between the end of workbench 105 and pipeline 135, and produce when gas leaves pipeline 135 etc. Gas ions 148.In these implementations, an at least opening 151 (for example, inner wire of the pipeline 135 closer to workbench 134 end) serve as one in electrode and workbench 105 is used such as antielectrode.As top is noted, inner wire 134 and outer Conductor 132 can be electrically coupled so that in same potential.If however, outer conductor 132 is not electrically connected to inner wire 134, then outer conductor 132 can be suspension joint (floating) or to be connected to ground connection.Lead in outer conductor 132 is not electrically connected to Body 134 and inner wire 134 is shorter than in the implementation of outer conductor 132, outer conductor 132 can be used such as electrode 133.

Produce in pipeline 135 in the implementation of plasma, pipeline 135 can include one or more electrodes 133, To the ionized gas when gas is flowed through or leaves pipeline.In the implementation, can place electrode 133 (for example, electrode and Antielectrode) inside the pipeline 135 (see Figure 1B).In the case, can dispose one or two electrode 133 in pipeline 135 but It is spaced apart with the inner surface of inner wire 134.

In some implementations, pipeline 135 can be formed and non-conductor by dielectric material.In the case, one can be arranged Individual or more electrodes 133 are at opening 151 or on the inner surface of pipeline 135.

In some implementations, source of the gas 138 can include electrode, and defeated through gas delivery system 136 in gas It is fed into ionized gas before inner wire 134.

Outer conductor 132 and inner wire 134 can be made of metal.Conductor 132 and 134 can be by same metal or different metal system Into.In general, by the RF signals of appropriate power and frequency are applied to pipeline 135 and/or workbench 105 and/or placement Electrode in pipeline 135, can form the plasma 148 obtained by gas, and the gas is supplied by source of the gas 138.

Higher radio frequency driving voltage is applied into the ion-flow rate into the controllable plasma of electrode, and will be compared with grazing shot Ion energy in frequency driving voltage application to the controllable plasma of an antielectrode.

RF can be provided by RF sources 150 and workbench 105 is biased into form the sheath portion around supplying material 114, the sheath portion is The boundary region of electric charge.The boundary region of electric charge can attract the ion of opposite-sign from plasma.When ionic bombardment supplying material, Ion can cause the chemical reaction on the supplying material of melting.The chemical modification of supplying material can occur simultaneously and by laser beam Supplying material melting caused by 124.

For example, supplying material 114 can be titanium.Titanium nitride is generally the material harder than titanium.For increasing material manufacturing zero The some regions of part can be needed with hard surface, for example, formed by titanium nitride.In the case, can be supplied by source of the gas 138 , to produce plasma, the plasma is except Nitrogen ion N for nitrogen₂ ⁺Or N⁺Nitrogen free radical can be included outward.Those nitrogen classes (species) Locally reaction forms titanium nitride with room temperature or slightly elevated temperature (for example, room temperature is to 300 degrees Celsius) with titanium.

Can be using these ions to corresponding to by the supply layer segment of the body surfaces for being manufactured.This is allowed in body surfaces The generation of coating.For example, coated titanium parts can be come with TiN applicators.

In addition to the chemical reaction for causing supplying material, or as the replacement of the chemical reaction for causing supplying material, Etchant free radical, such as Ti can be used_xF_y, to improve the surface finish of the supplying material of melting.Can by second gas entrance from Second source of the gas obtains etchant free radical, and second source of the gas is engaged with coaxial dot laser and plasma source.Controller 130 is coupled To be used for each source of the gas valve with control what gas in response to the instruction from CAD program flow ipe 135.For example, etchant Free radical can adjust the surface roughness of the supplying material of melting.For example, etchant free radical can be produced with 30 to 100 microinch The surface of very little surface roughness.Being removed a small amount of melting supplying material and stayed using help for etchant free radical has more The surface of low surface roughness.

Selectively, by adjusting the ion concentration for clashing into melting supplying material surface, the table of melting supplying material can be increased Surface roughness, for example, leaves when having hole surface of the roughness with increase when etchant randomly removes material.For example, By the frequency for changing the RF voltages applied to outer conductor 132, inner wire 134 and/or electrode 133, it is possible to decrease plasma stream Amount causes less ionic bombardment to melt the surface of supplying material, causes the erratic behavior being spaced further apart on surface, increases surface thick Rugosity.The surface roughness that melting supplying material increases can improve the new supplying material layer being deposited at the top of melting supplying material Viscosity or tack.

In some implementations, the ion for being formed near opening 151 in plasma is movable to workbench 105, And need not further accelerate or guide.

In some implementations, may be incorporated into extra device to help when gas is left via inner wire before workbench Help acceleration gas flowing (for example, the ion in plasma).

For example, as is shown in fig. 1 c, coaxial laser and gas source 201 are similar in appearance to coaxial dot laser and plasma source 131a, is sent by source 201 along common axis with lasing light emitter 126 and source of the gas 138, and laser beam 124 and gas.From source of the gas The ion of 138 gas is turned to optionally, but can be as described for coaxial laser and the same way of plasma source 131a Reach.

Coaxial laser and gas source 201 also include device, such as positioned at the 209 closer work of outer conductor 207 and inner wire The nozzle 203 of the opening 205 of platform 105.Nozzle 203 is configured to accelerate gas flowing when gas leaves inner wire 206. In some implementations, nozzle is configured to cause ultrasonic gas flowing.For example, nozzle 203 can be de Laval nozzles, receipts Hold back-divergent nozzles, CD nozzles or con-di nozzles.In some implementations, de Laval nozzles 203 can be in middle point The pipe of contracting with subtly balance, it is asymmetrical hourglass-shaped.Using nozzle 203 with accelerated particle beam 220, for example, accelerate Ion beam passes through nozzle 203 to obtain larger axle speed.In the manner, while region is by laser-light beam melts, particle beam Kinetic energy cause removing for material at the surface of increasing material manufacturing part layer, such as surface polishing.

The resolution of laser and plasma source 131 and/or laser and gas source 201 can be millimeter, down to micron.Change sentence Talk about, the increasing material manufacturing part of the chemical reaction to several millimeters of supplying material can be positioned, therefore the chemistry of manufacture part is provided The perfect spatial control of composition.The chemical reaction of controllable supplying material, for example, by adjust gas flow rate or into Point, or by controlling applied voltage to control the kinetic energy of ion.Can be in the laser of combination and plasma source 131 across work Platform 105 implements the adjustment when scanning, thus provides control in supplying material chemosphere.Further, since can independently of gas and/or Plasma and control lasing light emitter 126, and the region that melted by laser 124 of not all is needed by gas or ion processing, and can By gas or ion application to the region not melted by laser 124.

As top discusses, RF biass can be applied to workbench with acceleration charged ion on melted material part. In this mode, ion can penetrate melted material part with cause or release stress by produced by the thermal annealing of supplying material (by Caused by laser beam 124).In general, neutral molecule, such as argon or helium can be used for surface polishing, and do not cause any The chemical modification on surface.When using these neutral molecules, RF power sources 142 can be closed, and in gas supply source 138 Property molecules strike melting supplying material surface before, these neutral molecules can only accelerate across de Laval nozzles 203.When making When using neutral molecule, the diffusion of these (or other) molecules can occur and the supplying material layer being melted is entered, even without applying Add to the bias of workbench.For example, molecule can be diffused directly into by the heat fusing supplying material produced by lf/sintering Layer.

Aforementioned capabilities are particularly suited for use in the chemical composition of the inner surface of modification increasing material manufacturing pipeline and/or surface essence It is whole.For example, Fig. 3 B illustrate the top view of the supplying material layer 280 of a layer for constituting increasing material manufacturing pipeline.Pipeline has inwall 282.Inwall 282 can be made up of material 284, and material 284 is obtained by the supplying material 114 of chemical modification script.In increasing material manufacturing An easness advantage for said method of inwall 322 is modified during process chemically.

In some implementations, gas delivery system 136 can be controlled to be adjusted into pipeline using controller 130 The flow rate of gas or gas componant of 135 gas access.In some implementations, can be adjusted using controller 130 Apply to the voltage of electrode 133 and/or workbench 105.These adjustment can be with the laser in the certain layer (Z location) of supplying material The position (x-y position) of beam is carried out together.In the manner, chemical composition needed for manufacturing part can be according to the side in specific supplying layer The function of face (x-y) position and change.

For example, laser and plasma source 131 can include the additional gas entrance for being each connected to extra source of the gas, to be able to More than one gas is conveyed to laser and plasma source 131.In the manner, for example, when oxygen flowing is conveyed through laser And during certain x-y position in plasma source 131 to supplying material layer, the supplying material of the oxidable x-y position.

As example, if supplying material is titanium, the ad-hoc location on supplying material layer can be with oxygen reaction forming oxygen Change titanium.Oxygen flowing can be stopped, and nitrogen flowing can be initialized producing titanium nitride with the another position in supplying material layer.

In addition to the surface of chemical modification increasing material manufacturing part or change surface roughness, also can be by removing manufacture zero The part of part is carried out point of use plasma source to deduct manufacture.In the manner, manufacture part can be lifted using deducting to process In resolution.For example, as shown in fig. 3, the resolution of two adjacent " pixels " 250 of supplying material is melted by arrow 252 Represent.As shown in fig. 3, new surface section 256 can be produced using deducting to process, wherein the resolution of adjacent " pixel " 258 It is now higher.Can be using similar Ti_xF_yEtchant chemistry ground realize deducting processs, and/or can be using high enough to ablation (ablate) laser power of supplying material is melted processing.Implement to deduct process on layer after material is processed implementing to increase. Therefore, sequentially can realize increasing on identical layer using same apparatus and material and deduct manufacture.

In the manner, method and apparatus allow in increasing material manufacturing part chemical composition a little and surface roughness Complete three-dimensional (x, y, z) control.

In operation, each layer is deposited and heat treatment after, workbench 105 reduces the amount that essence is equal to the thickness of layer. Then to deposit new layer, the new layer is covered in the layer of previous deposition, allotter to flatly across the workbench scanning of allotter 104 104 need not translate in vertical direction, and can then the heat treatment new layer melting supplying material.Repeat the process until Produce the object of complete three-dimensional.The thing of increasing material manufacturing is provided by the melting supplying material obtained by the heat treatment of supplying material Body.

As shown in Figure 2 A, the allotter 204 that can be used in dispenser assembly 104 can be single point allotter, and distribute Device can translate the layer of complete supplying material 206 is deposited on workbench 105 across x the and y directions of workbench 105.

Selectively, as shown in Figure 2 B, the allotter 214 that can be used in dispenser assembly 104 can be to be extended across work The linear distribution device of platform width.For example, allotter 214 can include the linear array of separately controllable opening, for example, nozzle. Allotter 214 only for example, can be substantially perpendicular to the major axis of allotter, to have deposited on the table along a dimension translation Whole supplying material layer.

Selectively, as shown in Fig. 2 C to Fig. 2 D, the allotter 224 of dispenser assembly 104 can be used in comprising can be independent The two-dimensional array of the opening of control, for example, nozzle.For example, allotter 224 can be large-area voxel nozzle print (LAVoN).LAVoN 224 allows to deposit complete two-dimentional supplying material layer simultaneously.LAVoN 224 can be to be formed at buik silicon The dense grid of the silicon hole (TSV) 228 in 226.Each TSV 228 can be controlled by piezoelectricity lock 230, when appropriate voltage is applied Piezoelectricity lock 230 cuts out specific 228 exit opening so that supplying material 206 is retained in TSV.When by different voltages apply To TSV 228, piezoelectricity lock 230 can open the exit opening of specific T SV 228, it is allowed to deposit supplying material on the table.By Control signal individually accesses each TSV 228 in LAVoN 224, and these control signals are based on the CAD for defining manufacture object File and by controller produce.Can be using LAVoN224 only depositing single supplying material.In this case, no supplying material It is deposited at the region of manufacture object void or manufactures in the region outside object.The embodiment being illustrated in Fig. 2 B to Fig. 2 D The deposition processes of supplying material on workbench can be accelerated.

Also the point plasma in being illustrated in Figure 1A and Figure 1B can be replaced using shown extended background plasma Source, to the chemical composition for controlling thickness (z) direction along manufactured part." large area " represents that plasma can cover reality Whole supplying material layer in matter.

As shown in FIG. 3 C, increasing material manufacturing system 100 of the increasing material manufacturing system 300 similar in appearance to Figure 1A, but include large area Background plasma generation system 302.Increasing material manufacturing system 300 includes the chamber wall 304 for defining chamber 103.

Extended background plasma can be produced by plasma production system 302.Plasma production system 302 is included Electrode 310, i.e. first electrode.Electrode 310 can be workbench 120 on or in conductive layer.This allows electrode 310 vertically can put down Move, similar in appearance to the piston 107 in Figure 1A.Electrode 310 can be used such as negative electrode.

Increasing material manufacturing system 300 also includes antielectrode 330, i.e. second electrode.Antielectrode 330 can be used such as anode.Though So Fig. 3 C diagrams antielectrode 330 is the flat board being suspended in chamber 103, and antielectrode 330 can be with other shapes or by chamber wall 304 part is providing.

At least one of electrode 310 and/or antielectrode 330 are connected to RF power sources, for example, RF voltage sources.For example, electricity Pole 310 may be connected to RF power sources 312 and antielectrode may be connected to RF power sources 332.In some implementations, electrode 310 Or in antielectrode 330 is connected to RF power sources, and another in electrode 310 or antielectrode 330 is grounded or connected to Impedance matching network.

By the applying of the RF signals of suitable power and frequency, plasma 340 is formed at negative electrode 310 and anode 330 Between discharge space 342 in.Plasma is electric neutrality medium (that is, the electricity of plasma of positively charged and negatively charged particle Lotus summation is generally zero).Description plasma 340 is for illustration purposes only for ellipse.In general, plasma fills up electricity Region between pole 310 and antielectrode 330, in addition near " dead zone " of anode surface.

Alternatively, system 300 can include magnet assemblies 350, and magnet assemblies 350 can produce such as 50 Gausses to 400 Gausses Magnetic field.Magnet assemblies 350 can include permanent magnet in workbench 120, for example, positioned at the top table near workbench 120 Face 316.Selectively, magnet assemblies can include electric magnet, for example, around dielectric (for example, the quartz) portion of the wall 304 of chamber 103 The aerial coil of the outer surface for dividing.RF electric currents pass through aerial coil.Operate when the RF power applied used in resonance mode When, aerial coil produces axle magnetic field in chamber 103.Magnetic field can be limited in screw charged particle, for example, negatively charged grain Son such as electronics.

The chamber 103 defined by chamber wall 304 can be closed in shell 102.Chamber wall 304 for example can be allowed in shell Vacuum environment is maintained in chamber 103 inside 102.Vacuum pump in shell 102 can be connected to chamber by vacuum evacuation port 306 103 with from discharge gas in chamber 103.Process gas or reactant gas can be imported into chamber 103 via gas access 308, The non-reactive gas of process gas such as argon or helium, reactant gas such as oxygen.According to these process, gas with various can be led Enter chamber 103.

Operating system 300 can provide the quality control of material under vacuum conditions, and the material is by occurring in system 300 Reason is formed.However, plasma 340 also can be produced at atmosheric pressure.

Similar in appearance to the dispenser assembly shown in Figure 1A, or the shape selected with the dispenser assembly shown in Fig. 2 B and Fig. 2 C Formula, can be overlying on workbench 105 using the deposition supplying material 314 of dispenser assembly 104.Controller 130 similarly controls connection To the drive system (not shown) of dispenser assembly 104, for example, linear actuatorss.Drive system was configured such that in the operation phase Between, dispenser assembly can move back and forth parallel to the top surface of workbench 120.

The driving voltage of upper frequency (for example, more than 50MHz) can be applied one (negative electrode or anode) into electrode, The bias voltage of lower frequency (for example, less than 20MHz) can be applied to another electrode simultaneously.In general, upper frequency letter Number produce plasma flow.Upper frequency RF driving voltages produce high flow (that is, more polyion and electricity in plasma Son).Lower frequency RF bias voltages control the energy of plasma intermediate ion.Under sufficiently low frequency (for example, 2MHz), partially Pressure signal can cause the supply that the ion in plasma has enough energy with evaporation deposition on substrate (for example, silicon wafer) Material (for example, aluminium powder).Compare down, under upper frequency bias voltage signal (for example, 13MHz), supplying material can occur Fusing.The point of change RF frequency and applying can cause the different meltdown properties of supplying material.Meltdown property can determine supplying material Recrystallize, this can cause intrametallic different stress and different relaxation (relaxation) behavior.

System 300, can be such as directed to comprising lasing light emitter 126 to produce laser beam 124 to the layer for scanning supplying material 314 Figure 1A's is above-mentioned.Lasing light emitter 126 can undergo the movement relative to workbench 105, or deflectable laser, for example, survey inspection stream by mirror Meter.Laser beam 124 can produce enough heat to cause supplying material 314 to melt.Lasing light emitter 126 and extended background plasma Chemical modification while the combination all supplying material layers of permission of system 302, for example, adulterates or aoxidizes, while still maintaining molten Melt the control of what voxel, for example, in response to the print pattern being stored in non-transient computer readable medium.

The characteristic for easily controlling to melt supplying material is allowed in the use of plasma.For example, can by optionally by Plasma implanting ions are come the supplying material layer that adulterates.Doping content can be changed, for example by system 100 or 300 in layers Change, or for example changed in one layer of supplying material by system 100.It is ion implanted and can helps discharge or cause supplying material layer In point stress.The example of alloy includes phosphorus.

Can bias plasma the space between the powder particle of supplying material and electrode is caused on powder will development Go out sufficiently large voltage, cause the electronics on supplying material or ion bom bardment.The electronics or ion for being used in bombardment may be from Gas ions and when apply DC or AC be biased on supplying material when be accelerated to supplying material.Can using bombardment process one layer, Etching material, chemical modification (for example, in reactive ion etching) supplying material, doping supplying material (for example, increase nitride Layer), or be used in surface treatment.

System 100 and 300 molten silicon, silicon oxide or alpha-silicon nitride powders be can be used in, silicon, silicon oxide or nitrogen subsequently etched SiClx layer.

With reference to Figure 1A or Fig. 3 A, the controller 130 of system 100 or 300 is connected to multiple systems component, for example, actuator, Valve and voltage source, with generate a signal to these components and coordinated manipulation and cause system realize the operation of various above-mentioned functions or Sequence of steps.Controller can be implemented with Fundamental Digital Circuit or with computer software, firmware or hardware.For example, controller can be wrapped Containing processor to perform the computer program being stored in computer program product, for example, in non-transient machine-readable storage medium In.The computer program (also referred to as program, software, software application or code) can be write with any type of program language, these Program language includes compiled or interpreted language, and can utilize the computer program in any form, comprising becoming stand-alone program Or become module, component, subprogram (subroutine), or be adapted in use to other units in computerized environment.

As noted above, controller 130 can include non-transient computer readable medium, to store data object, for example, electricity The compatible file of brain Aided Design (CAD), the pattern that should be deposited in each layer of the data object identification supplying material.For example, number Can be file, 3D manufacture form (3MF) files or increasing material manufacturing file format (AMF) file of STL forms according to object.For example, Controller can receive the data object from remote computer.Processor in controller 130, for example, is controlled by firmware or software Processor can interpret the data object for being received from the computer, to produce signal group necessary to control system part, to beat Print is for each layer defined pattern.

Treatment conditions for metal and ceramic increasing material manufacturing are significantly different with these conditions for plastics.For example, one As for, metal and ceramics need considerably higher treatment temperature.For example, metal needs will be in 400 degrees Celsius or higher of the order of magnitude At a temperature of process, such as aluminum, 700 degrees Celsius.Additionally, ought to occur in vacuum environment, for example at metal, in case block Change.Therefore, the 3D printing technique for plastics can not be applied to metal or ceramics are processed and equipment can not be equivalent.Additionally, using Can be substantially tightened up in the manufacturing condition of big industrial size part.

However, some can be applied to plastic powders in this technology for describing.The example of plastic powders is included：Nylon, third Alkene nitrile-butadiene-styrene (ABS), polyurethanes, acrylate (acrylate), epoxy resin, Polyetherimide, Polyether-ether-ketone (PEEK), PEKK (PEKK), polystyrene or polyamide.

Some features in the separate embodiment described in text can also be combined and are implemented in single embodiment, And on the contrary, the various features in the single embodiment described in text also individually can be implemented and its without the embodiment Its feature.

For example, although at the aspect that the material composition of part spatially changes, such part is fabricated to potential advantage, But the system is still had the further advantage that when to produce the part with consistent material composition, for example, using plasma And/or gas the combination to form material is allowed with reference to laser.

A number of implementation has been described.It should be understood, however, that various modifications can be made.Correspondingly, other realization sides Formula is in the range of following claims.

Claims (15)

1. a kind of increasing material manufacturing system, the increasing material manufacturing system include：

Workbench；

Supplying material distributor, the supplying material distributor are configured to convey the supplying material layer covering work Platform；

Lasing light emitter, the lasing light emitter are configured to produce laser beam；

Controller, the controller are configured to guide data of the laser beam in computer readable medium is stored in be advised The supplying material is melted at fixed position；

Source of the gas, the source of the gas are configured to supply gas；And

Nozzle, the nozzle are configured to accelerate and guide the gas to the position substantially identical with the laser beam.

2. the system as claimed in claim 1, wherein the nozzle is configured to accelerate the gas to hypersonic velocity.

3. system as claimed in claim 2, wherein the nozzle includes de Laval nozzles.

4. system as claimed in claim 3, wherein the laser beam and the gas send described to clash into along common axis The supplying material on workbench.

5. the system as claimed in claim 1, including pipeline, the pipeline have first end and the second end, and the first end is leaned on The nearly laser instrument, and second end is near the workbench, and wherein the laser, the spray are guided via the pipeline Mouth is placed on second end of the pipeline, and the source of the gas is configured to inject the gas into the pipeline The first end.

6. a kind of increasing material manufacturing method, the method comprising the steps of：

Distribution supplying material layer covers workbench；

Guided laser beam is heating the supplying material at the position of the data defined being stored in computer readable medium； And

Guiding gas material is to the position substantially identical with the laser beam.

7. method as claimed in claim 6, wherein the gas material causes the change at the position on the workbench Learn reaction.

8. method as claimed in claim 6, wherein the gas material is accelerated by nozzle, the nozzle is placed in the gas material In the path of material.

9. method as claimed in claim 8, wherein the gas material is configured to the surface essence for changing the supplying material It is whole.

10. method as claimed in claim 6, wherein the gas material includes etchant, the etchant is configured to move Except the supplying material.

11. methods as claimed in claim 6, wherein the gas material is guided at a region of the supplying material layer, Surface of the region corresponding to the object to be manufactured, to form the coating of heterogeneity on the object.

A kind of 12. increasing material manufacturing methods, the method comprising the steps of：

Distribution ground floor supplying material covers workbench；

The ground floor for heating the first position of the data defined on the workbench in computer readable medium is supplied Material, to melt the part of the ground floor supplying material；

When the supplying material of melting is held on workbench, a part for the supplying material of the melting is etched；

Distribution second layer supplying material covers etched on the workbench and melting supplying material；And

Heat the data defined being stored on the workbench in the computer readable medium second position it is described Second layer supplying material, to melt the Part II of the second layer supplying material.

A kind of 13. increasing material manufacturing systems, the increasing material manufacturing system include：

Workbench；

Supplying material distributor, the supplying material distributor are configured to convey the supplying material layer covering work Platform；

Laser instrument, the laser instrument are configured to produce laser beam；

Controller, the controller are configured to cause data of the laser beam in computer readable medium is stored in be advised The supplying material is melted at fixed position；

Plasma source, the plasma source are configured to produce plasma, and the plasma essence is across the supply The whole of material layer extends and generation is directed to the ion on the supplying material.

14. systems as claimed in claim 13, wherein the plasma source is configured to described in the laser-light beam melts The plasma is produced during supplying material.

15. systems as claimed in claim 13, wherein the controller is configured to be delivered to base control from level to level The gas flow rate or gas componant of chamber, produces the plasma in the cavity by the plasma source.