CN106533137B - Synchronous rectification drive circuit suitable for wide input voltage range and wide output range - Google Patents

Synchronous rectification drive circuit suitable for wide input voltage range and wide output range Download PDF

Info

Publication number
CN106533137B
CN106533137B CN201611263689.2A CN201611263689A CN106533137B CN 106533137 B CN106533137 B CN 106533137B CN 201611263689 A CN201611263689 A CN 201611263689A CN 106533137 B CN106533137 B CN 106533137B
Authority
CN
China
Prior art keywords
resistor
voltage
mosfet
diode
driving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201611263689.2A
Other languages
Chinese (zh)
Other versions
CN106533137A (en
Inventor
韩苏林
丁旭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TIANSHUI 749 ELECTRONIC CO LTD
Original Assignee
TIANSHUI 749 ELECTRONIC CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TIANSHUI 749 ELECTRONIC CO LTD filed Critical TIANSHUI 749 ELECTRONIC CO LTD
Priority to CN201611263689.2A priority Critical patent/CN106533137B/en
Publication of CN106533137A publication Critical patent/CN106533137A/en
Application granted granted Critical
Publication of CN106533137B publication Critical patent/CN106533137B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/22Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H02M3/33576Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
    • H02M3/33592Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0048Circuits or arrangements for reducing losses
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Rectifiers (AREA)

Abstract

A synchronous rectification drive circuit suitable for wide input voltage range and wide output range comprises a transformer coupling signal acquisition circuit, two independent MOSFET drivers and a bootstrap type boosting control circuit, wherein a driving transformer of the transformer coupling signal acquisition circuit acquires driving waveforms of a front-stage PWM driving chip of a switching power supply and is synchronously coupled to an output end, the waveforms of the signals are divided into two parts by the two independent MOSFET drivers, and driving signals are provided for a rear-stage synchronous rectification tube; the two independent MOSFET drivers are connected with a bootstrap boost control circuit, and the bootstrap boost control circuit provides driving and control functions for the MOSFET drivers. The drive signals of the synchronous rectifying tube are respectively provided by two independent MOSFET drivers, and the drive signals are from the control signals of the front-stage PWM drive, so that the synchronous degree of the work with the front-stage switching tube is high, the time delay is small, the bootstrap type boosting control provides extra boosting drive control for the MOSFET drivers, and the accuracy of the work time sequence is ensured.

Description

Synchronous rectification drive circuit suitable for wide input voltage range and wide output range
Technical Field
The invention belongs to the technical field of driving circuits, and particularly relates to a synchronous rectification driving circuit suitable for wide input voltage range and wide output range.
Background
With the rapid development of communication and computer technologies, low-voltage high-current switching power supplies are more and more widely applied. In order to meet the requirements of high power and large current, power supply engineers are always dedicated to improving the efficiency of the power supply. To improve the efficiency, the overall loss of the power supply during operation is reduced, and the loss of the power supply mainly consists of 3 parts: loss of power switch tube, loss of high-frequency transformer, loss of output end rectifier tube. Under the condition of low voltage and large current output, the conduction voltage drop of the rectifier diode is high, and the loss of the rectifier tube at the output end is particularly prominent. The Fast Recovery Diode (FRD) or the ultrafast recovery diode (SRD) may reach 1.0-1.2V, and even if a low-voltage-drop schottky diode (SBD) is used, a voltage drop of about 0.6V is generated, which results in an increase in rectification loss and a reduction in power efficiency.
Synchronous rectification is a new technology that uses a special power MOSFET with extremely low on-state resistance to replace a rectifier diode to reduce the rectification loss. It can greatly improve the efficiency of the DC/DC converter and has no dead zone voltage caused by Schottky barrier voltage. The power MOSFET is a voltage controlled device that has a linear current-voltage characteristic when turned on. When the power MOSFET is used as a rectifier, the gate voltage is required to be synchronous with the phase of the rectified voltage to complete the rectification function, so the synchronous rectification is called. However, since the MOSFET is an active device, it needs to be connected with a driving voltage during operation, such as a conventional single-ended forward self-driven synchronous rectification (fig. 1), and the rectifying MOSFET tube driver is directly provided by the secondary voltage of the transformer. The circuit has the advantages that the circuit is very simple, the circuit can normally work without an additional driving circuit, but the circuit has the defects that the driving time sequences of the two MOSFETs are not accurate enough, and the MOSFETs cannot replace diodes for rectification in the whole period, so that the time for the load current to flow through the parasitic diodes is long, the large loss is caused, and the efficiency improvement is limited. In addition, the circuit is directly driven by using the secondary side voltage, and the safe driving voltage of the gate and the source of the MOSFET is usually required to be 20V, so that the application range of the circuit is greatly limited.
If an external independent driving circuit scheme is adopted, the required external circuit is relatively complex, the driving loss is relatively large, and the driving capability provided by the driving circuit is very limited due to the fact that a special chip is usually arranged outside and the price is high.
Disclosure of Invention
The invention aims to solve the technical problem of providing a synchronous rectification drive circuit which is used for middle-preceding stage sampling, has high matching degree with a preceding stage control system, adopts a field effect transistor as a voltage type device, has small delay time, high dynamic response, stable drive voltage and small drive loss, and can be suitable for application occasions with wide input voltage range and wide output voltage range. The drive signals of the synchronous rectifying tube are respectively provided by two independent MOSFET drivers, the drive signals are from the control signal of the front-stage PWM, so that the synchronous degree with the operation of the front-stage switching tube is high, the time delay is small, the bootstrap type boost control provides extra boost drive control for the MOSFET drivers, and the accuracy of the working time sequence is ensured.
The technical scheme is as follows for solving the technical problem of the invention:
a synchronous rectification drive circuit suitable for wide input voltage range and wide output range comprises a transformer coupling signal acquisition circuit, two independent MOSFET drivers and a bootstrap type boosting control circuit, wherein a transformer BT1 of the transformer coupling signal acquisition circuit acquires a drive square wave signal of a front-stage PWM controller of a switching power supply and is synchronously coupled to an output end, the signal divides a waveform into two parts through the two independent MOSFET drivers and provides a drive signal for a rear-stage synchronous rectification tube; the two independent MOSFET drivers are connected with a bootstrap type boost control circuit, and the bootstrap type boost control circuit provides driving and control functions for the MOSFET drivers; the transformer coupling signal acquisition circuit comprises a transformer BT1, a capacitor C2 and a capacitor C3, and the specific connection method comprises the following steps: one end of a capacitor C1 is connected with a driving square wave signal of a 6-pin PWM controller, wherein the PWM controller is of a model UC2843, the other end of the capacitor C1 is connected with one end of a primary winding of a transformer BT1, the other end of the primary winding of the transformer BT1 is connected with an input ground, the secondary side of the transformer BT1 is provided with two identical windings N2 and N3, one ends of the windings N2 and N3 are connected with the ground, the other end of the winding N2 is connected with one end of the capacitor C2, the other end of the winding N3 is connected with one end of the capacitor C3, the capacitor C2 and the capacitor C3 are respectively connected with a MOSFET driver.
The two independent MOSFET drivers are respectively a first MOSFET driver and a second MOSFET driver, the first MOSFET driver comprises an N-channel MOSFET T1 and a P-channel MOSFET T2 and a resistor R8, the second MOSFET driver comprises an N-channel MOSFET T4 and a P-channel MOSFET T3, and a resistor R9; the source of the T1 is grounded, the drain of the T1 is an INA control signal output end, the drain of the T1 is connected with one end of a R8 resistor, the other end of the R8 resistor is connected with the drain of the T2, the gate of the T1 is connected with the T2, the T2 is connected with one end of the bootstrap boost control circuit, the gate of the T3 is connected with the gate of the T4 and connected with the other end of the bootstrap boost control circuit, the source of the T4 is grounded, the drain of the T4 is an INB control signal output end, the drain of the T4 is connected with one end of a R9 resistor, the other end of the R9 resistor is connected with the drain of the T3, and the source of the.
The bootstrap type boost control circuit comprises a diode D1, a diode D2, a diode D3, a diode D4, a capacitor C4, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6 and a resistor R7; one end of the resistor R4, one end of the resistor R1, the anode of the diode D1 and the cathode of the diode D2 are connected with the other end of the C2 in the transformer coupling signal acquisition circuit; the other end of the resistor R1 is grounded, the cathode of the diode D1 is connected with one end of the resistor R7, and the cathode of the diode D4 is connected; the other end of R7 is connected with one end of a resistor R5 and R6, the other end of R6 is grounded, and the other end of R5 is connected with one end of a capacitor C4 and is connected with the source of T2 and the source of T3 in the MOSFET driver; the other end of the capacitor C4 is connected with the anode of the diode D2, the anode of the diode D3, the cathode of the diode D3, the anode of the diode D4, one end of the resistors R2 and R3 is connected with the other end of the capacitor C3 in the transformer coupling signal acquisition circuit, and the other end of the resistor R2 is grounded.
After the secondary voltage of BT1 is rectified by a diode voltage doubling circuit, a direct current voltage is obtained on a capacitor C4 after the voltage division of a resistor, the direct current voltage drives the T2 and the T3 of a MOSFET of a P channel to be conducted, meanwhile, the direct current voltage is a pull-up voltage signal which is used as output, when the primary voltage is in a positive half period, a MOSFET tube T1 is conducted, an INA pin is pulled down to be grounded, no signal is output, T4 is cut off, the driving voltage provides a voltage signal for an INB through T3 and a pull-up resistor R9; when the previous stage signal is a negative half cycle, the MOSFET T4 is conducted, the INB pin is pulled down to be grounded, no signal is output, meanwhile, T1 is cut off, the driving voltage provides a voltage signal for INA through T2 and a pull-up resistor R8; when the input signals are changed alternately, INA and INB also obtain square wave voltage signals which are continuously and alternately output; r1 and R2 in the circuit are discharge resistors of a grid source, R8 and R9 are pull-up resistors of driving voltage signals, a voltage division circuit consisting of R5, R6 and R7 can control the voltage amplitude of C4, and the voltage amplitude and the rising slope of INA and INB are controlled so as to realize accurate control of the dead time of synchronous rectification.
The invention is mainly applied to a DC/DC power supply with large current output, and provides an isolated synchronous rectification driving signal which can accurately control the duty ratio and the dead time for a post-stage synchronous rectification circuit. The drive signal comes from preceding stage sampling, the matching degree with a preceding stage control system is high, meanwhile, a driver consisting of MOSFET (metal oxide semiconductor field effect transistor) utilizing an N channel and a P channel is adopted, a field effect transistor is a voltage device, the circuit can enable the drive signal to adapt to different voltage outputs through the combination of different MOSFET (metal oxide semiconductor field effect transistor) transistors, and a bootstrap type boost rectification circuit is utilized to simultaneously provide a synchronous rectification drive signal and the MOSFET transistor for driving the P channel, so that the application is more flexible; meanwhile, the driving time sequence and the dead time are accurately adjustable through the control of the voltage amplitude and the slope. The invention has low cost compared with a special synchronous rectification driver, and the driving voltage signal is obtained by directly coupling the preceding stage driving, the driving time delay is small, the interference by the output reflection noise is low, meanwhile, the voltage is independent, the invention is not influenced by the input voltage and the output voltage, the dynamic response is high, the driving voltage is stable, the driving loss is small, the driving time sequence is accurate and adjustable, and the line loss is low.
Drawings
FIG. 1 is a schematic diagram of a prior art single-ended self-driven synchronous rectifier circuit;
FIG. 2 is a functional block diagram of the present invention;
fig. 3 is a schematic diagram of the circuit of the present invention.
Detailed Description
The invention will be described in more detail with reference to the following figures:
as shown in fig. 2 and 3, a synchronous rectification driving circuit suitable for wide input voltage range and wide output range includes a transformer coupling signal acquisition circuit, two independent MOSFET drivers, a bootstrap boost control circuit, a transformer BT1 of the transformer coupling signal acquisition circuit acquiring a driving square wave signal of a preceding stage PWM controller of a switching power supply and synchronously coupling to an output terminal, the signal dividing a waveform into two by the two independent MOSFET drivers and providing a driving signal for a subsequent synchronous rectification tube; the two independent MOSFET drivers are connected with the bootstrap boost control circuit, and the bootstrap boost control circuit provides driving and control functions for the MOSFET drivers.
The transformer coupling signal acquisition circuit comprises a transformer BT1, a capacitor C2 and a capacitor C3, and the specific connection method comprises the following steps: one end of a capacitor C1 is connected with a driving square wave signal of a 6-pin PWM controller, wherein the PWM controller is of a model UC2843, the other end of the capacitor C1 is connected with one end of a primary winding of a transformer BT1, the other end of the primary winding of the transformer BT1 is connected with an input ground, the secondary side of the transformer BT1 is provided with two identical windings N2 and N3, one ends of the windings N2 and N3 are connected with the ground, the other end of the winding N2 is connected with one end of the capacitor C2, the other end of the winding N3 is connected with one end of the capacitor C3, the capacitor C2 and the capacitor C3 are respectively connected with a MOSFET driver.
The two independent MOSFET drivers are respectively a first MOSFET driver and a second MOSFET driver, the first MOSFET driver comprises an N-channel MOSFET T1, a P-channel MOSFET T2 and a resistor R8, the second MOSFET driver comprises an N-channel MOSFET T3, a P-channel MOSFET T4 and a resistor R9; the source of the T1 is grounded, the drain of the T1 is an INA control signal output end, meanwhile, the drain of the T1 is connected with one end of a resistor R8, the other end of the resistor R8 is connected with the drain of the T2, the grid of the T1 is connected with the grid of the T2 and is connected with one end of a bootstrap boost control circuit, the grid of the T3 is connected with the grid of the T4 and is connected with the other end of the bootstrap boost control circuit, the source of the T4 is grounded, the drain of the T4 is an INB control signal output end, meanwhile, the drain of the T4 is connected with one end of a resistor R9, the other end of the resistor R9 is connected with the drain of the T3, and the source of the T3 is connected with the source.
The bootstrap type boost control circuit comprises a diode D1, a diode D2, a diode D3, a diode D4, a capacitor C4, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6 and a resistor R7; one end of the resistor R4, one end of the resistor R1, the anode of the diode D1 and the cathode of the diode D2 are connected with the other end of the C2 in the transformer coupling signal acquisition circuit; the other end of the resistor R1 is grounded, the cathode of the diode D1 is connected with one end of the resistor R7, and the cathode of the diode D4 is connected; the other end of R7 is connected with one end of a resistor R5 and R6, the other end of R6 is grounded, and the other end of R5 is connected with one end of a capacitor C4 and is connected with the source of T2 and the source of T3 in the MOSFET driver; the other end of the capacitor C4 is connected with the anode of the diode D2, the anode of the diode D3, the cathode of the diode D3, the anode of the diode D4, one end of the resistors R2 and R3 is connected with the other end of the capacitor C3 in the transformer coupling signal acquisition circuit, and the other end of the resistor R2 is grounded.
The driving method of the synchronous rectification driving circuit suitable for wide input voltage range and wide output range comprises the following steps: after the secondary voltage of BT1 is rectified by a diode voltage doubling circuit, a direct current voltage is obtained on a capacitor C4 after the voltage division of a resistor, the direct current voltage drives the T2 and the T3 of a MOSFET of a P channel to be conducted, meanwhile, the direct current voltage is a pull-up voltage signal which is used as output, when the primary voltage is in a positive half period, a MOSFET tube T1 is conducted, an INA pin is pulled down to be grounded, no signal is output, T4 is cut off, the driving voltage provides a voltage signal for an INB through T3 and a pull-up resistor R9; when the previous stage signal is a negative half cycle, the MOSFET T4 is conducted, the INB pin is pulled down to be grounded, no signal is output, meanwhile, T1 is cut off, the driving voltage provides a voltage signal for INA through T2 and a pull-up resistor R8; when the input signals are changed alternately, INA and INB also obtain square wave voltage signals which are continuously and alternately output; in the circuit, R1 and R2 are discharge resistors of a grid source electrode, R8 and R9 are pull-up resistors of a driving voltage signal, and the resistors determine the rising slope of the INB voltage. The voltage dividing circuit composed of R5, R6 and R7 can control the voltage amplitude of C4, and the precise control of the dead time of synchronous rectification is realized by controlling the voltage amplitudes of INA and INB and the rising slope.

Claims (2)

1. A synchronous rectification drive circuit suitable for wide input voltage range and wide output range is characterized in that: the transformer BT1 of the transformer coupled signal acquisition circuit acquires a driving square wave signal of a front-stage PWM controller of a switching power supply and is synchronously coupled to an output end, the signal divides a waveform into two parts through the two independent MOSFET drivers and provides a driving signal for a rear-stage synchronous rectifier tube; the two independent MOSFET drivers are connected with a bootstrap type boost control circuit, and the bootstrap type boost control circuit provides driving and control functions for the MOSFET drivers;
the transformer coupling signal acquisition circuit comprises a transformer BT1, a capacitor C2 and a capacitor C3, and the specific connection method comprises the following steps: one end of a capacitor C1 is connected with a driving square wave signal of a 6-pin PWM controller, wherein the model of the PWM controller is UC2843, the other end of the capacitor C1 is connected with one end of a primary winding of a transformer BT1, the other end of the primary winding of the transformer BT1 is connected with the input ground, the secondary side of the transformer BT1 is provided with two identical windings N2 and N3, one ends of the windings N2 and N3 are connected with the ground, the other end of the winding N2 is connected with one end of the capacitor C2, and the other end of the winding N3 is connected with one end of the capacitor C3;
the two independent MOSFET drivers are respectively a first MOSFET driver and a second MOSFET driver, the first MOSFET driver comprises an N-channel MOSFET T1, a P-channel MOSFET T2 and a resistor R8, and the second MOSFET driver comprises an N-channel MOSFET T4, a P-channel MOSFET T3 and a resistor R9; the source of the T1 is grounded, the drain of the T1 is an INA control signal output end, the drain of the T1 is connected with one end of a R8 resistor, the other end of the R8 resistor is connected with the drain of the T2, the grid of the T1 is connected with the grid of the T2 and is connected with one end of a bootstrap boost control circuit, the grid of the T3 is connected with the grid of the T4 and is connected with the other end of the bootstrap boost control circuit, the source of the T4 is grounded, the drain of the T4 is an INB control signal output end, the drain of the T4 is connected with one end of a R9 resistor, the other end of the R9 resistor is connected with the drain of the T3, and the source of the;
the bootstrap type boost control circuit comprises a diode D1, a diode D2, a diode D3, a diode D4, a capacitor C4, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6 and a resistor R7; one end of the resistor R4, one end of the resistor R1, the anode of the diode D1 and the cathode of the diode D2 are connected with the other end of the C2 in the transformer coupling signal acquisition circuit; the other end of the resistor R1 is grounded, and the cathode of the diode D1 is connected with one end of the resistor R7 and the cathode of the diode D4; the other end of R7 is connected with one end of a resistor R5 and R6, the other end of R6 is grounded, and the other end of R5 is connected with one end of a capacitor C4 and is connected with the source of T2 and the source of T3 in the MOSFET driver; the other end of the capacitor C4 is connected with the anode of the diode D2 and the anode of the diode D3, the cathode of the diode D3, the anode of the diode D4, one end of the resistor R2 and one end of the resistor R3 are connected with the other end of the capacitor C3 in the transformer coupling signal acquisition circuit, and the other end of the R2 is grounded;
the other end of the resistor R3 is connected with the grid of the T3 and the grid of the T4, and the other end of the resistor R4 is connected with the grid of the T1 and the grid of the T2.
2. A driving method of a synchronous rectification driving circuit suitable for a wide input voltage range and a wide output range according to claim 1: after the secondary voltage of BT1 is rectified by a diode voltage doubling circuit, a direct current voltage is obtained on a capacitor C4 after the voltage division of a resistor, the direct current voltage drives MOSFET tubes T2 and T3 of a P channel to be conducted, meanwhile, the direct current voltage is a pull-up voltage signal which is used as output, when the primary signal is in a positive half period, the MOSFET tube T1 is conducted, an INA pin is pulled down and grounded, no signal is output, T4 is cut off, the driving voltage provides a control signal for an INB through T3 and a pull-up resistor R9; when the previous stage signal is a negative half cycle, the MOSFET T4 is conducted, the INB pin is pulled down to be grounded, no signal is output, meanwhile, T1 is cut off, the driving voltage provides a control signal for INA through T2 and a pull-up resistor R8; when the current-level signals are changed alternately, INA and INB also obtain control signals which are continuously and alternately output; r1 and R2 in the circuit are discharge resistors of a grid, R8 and R9 are pull-up resistors of control signals, a voltage division circuit consisting of R5, R6 and R7 can control the amplitude of voltage on C4, and the amplitude and the rising slope of INA and INB voltage are controlled so as to realize accurate control of dead time of synchronous rectification.
CN201611263689.2A 2016-12-30 2016-12-30 Synchronous rectification drive circuit suitable for wide input voltage range and wide output range Active CN106533137B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201611263689.2A CN106533137B (en) 2016-12-30 2016-12-30 Synchronous rectification drive circuit suitable for wide input voltage range and wide output range

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201611263689.2A CN106533137B (en) 2016-12-30 2016-12-30 Synchronous rectification drive circuit suitable for wide input voltage range and wide output range

Publications (2)

Publication Number Publication Date
CN106533137A CN106533137A (en) 2017-03-22
CN106533137B true CN106533137B (en) 2020-09-04

Family

ID=58336353

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201611263689.2A Active CN106533137B (en) 2016-12-30 2016-12-30 Synchronous rectification drive circuit suitable for wide input voltage range and wide output range

Country Status (1)

Country Link
CN (1) CN106533137B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5305191A (en) * 1992-04-20 1994-04-19 At&T Bell Laboratories Drive circuit for zero-voltage switching power converter with controlled power switch turn-on
CN1551342A (en) * 2003-05-14 2004-12-01 ��ʽ���������Ƽ� Semiconductor device and power supply system
CN201590768U (en) * 2009-12-08 2010-09-22 佛山市顺德区和而泰电子科技有限公司 Multiple-output power circuit and device
CN105896987A (en) * 2015-03-24 2016-08-24 上海英联电子***有限公司 Flyback converter bootstrap type synchronous rectification drive circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5305191A (en) * 1992-04-20 1994-04-19 At&T Bell Laboratories Drive circuit for zero-voltage switching power converter with controlled power switch turn-on
CN1551342A (en) * 2003-05-14 2004-12-01 ��ʽ���������Ƽ� Semiconductor device and power supply system
CN201590768U (en) * 2009-12-08 2010-09-22 佛山市顺德区和而泰电子科技有限公司 Multiple-output power circuit and device
CN105896987A (en) * 2015-03-24 2016-08-24 上海英联电子***有限公司 Flyback converter bootstrap type synchronous rectification drive circuit

Also Published As

Publication number Publication date
CN106533137A (en) 2017-03-22

Similar Documents

Publication Publication Date Title
CN108683327B (en) Silicon carbide MOSFET drive circuit
TWI482402B (en) Bootstrap gate driver
TWI740837B (en) An automatic enhanced self-driven synchronous rectification control circuit, an active-clamp forward converter and an active-clamped power converter
CN102983760B (en) Flyback switching power system and constant current controller thereof
WO2015079762A1 (en) Rectifier
CA2655013A1 (en) Current-source gate driver
TW200535983A (en) Synchronous rectifier circuits and method for utilizing common source inductance of the synchronous fet
CN108063542B (en) Simple, reliable and low-cost driving circuit for silicon carbide power switch device
WO2020114248A1 (en) Self drive circuit for two-transistor forward synchronous rectifier circuit
AU2017394665A1 (en) Transformer based gate drive circuit
CN111585425A (en) Power device driving method for switching circuit, driving circuit and switching circuit
WO2018090558A1 (en) Synchronous rectification circuit
CN202586786U (en) Synchronous rectification circuit based on synchronous rectification chip low-voltage-output push-pull converter
CN209930165U (en) Synchronous rectifying device using driving winding
JP2007028888A (en) Rectifying circuit and voltage conversion circuit
CN106533137B (en) Synchronous rectification drive circuit suitable for wide input voltage range and wide output range
US20110068832A1 (en) Driving circuit for power mosfet
CN101976939B (en) MOSFET driving chip of current source
CN210405076U (en) Power device driving circuit for switching circuit and switching circuit
US8643350B2 (en) Self-driven synchronous rectification boost converter having high step-up ratio
CN106094576B (en) Drive control circuit based on IGBT shaping
CN214014122U (en) Low-cost synchronous rectification circuit
CN209497392U (en) A kind of external drive circuit of DC-DC converter synchronous rectification
CN110545038A (en) Switching power supply control circuit and control method
CN220492876U (en) Flyback synchronous rectification drive circuit based on digital isolation

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant