CN106532654A - Single-trigger timer-based overload protection circuit - Google Patents
Single-trigger timer-based overload protection circuit Download PDFInfo
- Publication number
- CN106532654A CN106532654A CN201610909564.6A CN201610909564A CN106532654A CN 106532654 A CN106532654 A CN 106532654A CN 201610909564 A CN201610909564 A CN 201610909564A CN 106532654 A CN106532654 A CN 106532654A
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- China
- Prior art keywords
- protecting circuit
- overload protecting
- pins
- power supply
- timer
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The present invention relates to a single-trigger timer-based overload protection circuit and belongs to the protection circuit design technical field. The single-trigger timer-based overload protection circuit comprises a first overload protection circuit and a second overload protection circuit; the first overload protection circuit is connected with the operating power source input port A of an avalanche photodiode; the second overload protection circuit is connected with the operating power source input port B of a trans-impedance amplifier; and the second overload protection circuit comprises a protection module.
Description
Technical field
The present invention relates to protecting circuit designed technical field, and in particular to a kind of overload for triggering timer based on single is protected
Protection circuit.
Background technology
Power amplifier significantly may be damaged under input power overload conditions.Due to such as in Photodetection system
The multiplex modulated signal with high peak-to-average force ratio (peak-to-averageratio) of the composite signal of middle discovery etc, to this
Preventing for kind overload conditions is complicated.Traditional securitron can not be accomplished：Sufficiently rapidly reacted to avoid
The peak value of waveform is for good and all destroyed, while provide to be enough to not make the linear of spectral re-growth deterioration.The general light with APD-TIA
The minimum overload values of electric explorer are -7dBm, may damage TIA more than the value.Therefore need to solve two technical problems：1、
The minimum overload values of increase, while the sensitivity of photodetector can not be affected；2nd, luminous power is prevented in minimum overload values annex
Optical signal long-time is incident to be caused to damage to photo-detector.
The content of the invention
For above-mentioned prior art, present invention aim at providing, solution prior art spectral linearity degree is poor, incoming signal
Luminous power burns out the technical problems such as TIA parts more than minimum overload values.
For reaching above-mentioned purpose, the technical solution used in the present invention is as follows：
A kind of overload protecting circuit for being triggered timer based on single, is protected including the first overload protecting circuit and the second overload
Protection circuit, first overload protecting circuit are connected with the working power input port A of avalanche photodide, second mistake
Carry protection circuit to be connected with the working power input port B of trans-impedance amplifier；The second described overload protecting circuit includes protection
Module.
In such scheme, first overload protecting circuit includes power supply chip A, the Vout pins of the power supply chip A
Be connected by first resistor and MONIN pins between, and Vout pins, MONIN pins also with power supply chip A inside electricity
The input of pressure switching amplifier is connected, and the output end of the voltage converting amplifiers is connected by the Vctrl pins of power supply chip A
Connect the avalanche photodide voltage controling end of MCU control chips.
Connection contact in such scheme, between the MONIN pins and the voltage converting amplifiers of the power supply chip A
Image current source circuit, the work of the VAPD-OUT pins, second resistance and avalanche photodide of power supply chip A are sequentially passed through also
Make power input port A to be connected.
Connection in such scheme, between the working power input port A of the second resistance and avalanche photodide
, by the first capacity earth, the image current source circuit is also by the MON pins of power supply chip A and MCU control chips for contact
Current monitoring end connection.
In such scheme, the resistance of the first resistor is 180 Ω, and the resistance of the second resistance is 10K Ω.
In such scheme, the power supply chip A is LT3571 model chips.
In such scheme, second overload protecting circuit includes
Protection module includes detector, and detector is physically divided with transmission line together with other parts of protection module
From；
Detector include single triggering timer and or OR logic elements the first output for being coupled of input；OR logics
Second input of element is coupled with the output of timer；
The output of OR logic elements is provided to control element and provides the input of phase inverter.The output of phase inverter is also
It is coupled with control element；
OR logic elements and phase inverter are provided bias voltage Vcc at corresponding power input.
Compared with prior art, beneficial effects of the present invention：
The minimum overload values for effectively improving the photo-detector with avalanche photodide and trans-impedance amplifier are left to 2dBm
It is right；Sufficiently rapidly reacted to avoid the peak value of waveform from for good and all being destroyed, while provide to be enough to not make spectral re-growth bad
That what is changed is linear.
Description of the drawings
Fig. 1 is the module diagram of the present invention；
Fig. 2 is the protection module schematic diagram of the present invention.
Specific embodiment
All features disclosed in this specification, or disclosed all methods or during the step of, except mutually exclusive
Feature and/or step beyond, can combine by any way.
The present invention will be further described below in conjunction with the accompanying drawings：
Embodiment 1
The present invention wherein there is the structure of the photodetector of avalanche photodide 1 and trans-impedance amplifier 2 as shown in figure 1,
Wherein avalanche photodide 1 have working power input port VAPD ends, working power input port VAPD ends it is optimal
Working power input voltage is generally 28.3V.The trans-impedance amplifier 2 has working power input port VTIA ends, the work
The best effort power input voltage at power input port VTIA end is generally 3.3V.ITIA is the defeated of avalanche photodide 1
Go out photoelectric current, while and trans-impedance amplifier 2 input current, also, the trans-impedance amplifier 2 exported with two-way, respectively
For Out_P, Out_N.
The overload protecting circuit of the present invention, the first overload protecting circuit and protection including protection avalanche photodide 1
Second overload protecting circuit of trans-impedance amplifier 2, by the first overload protecting circuit, the second overload protecting circuit correspondence to snowslide
Photodiode 1, trans-impedance amplifier 2 are separately powered.
It is connected with each other by the second electric capacity between the IN pins of the power supply chip B, GND pin；
The second electric capacity is parallel between connection contact and ground between the OUT pins of the power supply chip B and 3rd resistor
With the 3rd electric capacity, and second electric capacity and the 3rd electric capacity are parallel with one another；
The voltage of the external power supply is 5V, and the power supply chip B is MAX8891 model chips.
Second overload protecting circuit includes
Protection module 116 includes detector 120, other parts and transmission of the detector 120 together with protection module 116
Circuit 104 is physically separated；
Detector 120 include single triggering timer 124 and or OR logic elements 128 first input be coupled it is defeated
Go out；
Second input of OR logic elements 128 is coupled with the output of timer 124；
The output of OR logic elements 128 is provided to control element 112 and provides the input of phase inverter 132；
The output of phase inverter 132 is also coupled with control element 112；
OR logic elements 128 and phase inverter 132 are provided bias voltage Vcc at corresponding power input.
The above, the only specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, any
Belong to those skilled in the art the invention discloses technical scope in, the change or replacement that can be readily occurred in all are answered
It is included within the scope of the present invention.
Claims (7)
1. a kind of overload protecting circuit for triggering timer based on single, it is characterised in that including the first overload protecting circuit and
Second overload protecting circuit, first overload protecting circuit are connected with the working power input port A of avalanche photodide,
Second overload protecting circuit is connected with the working power input port B of trans-impedance amplifier；Described the second overload protection electricity
Road includes protection module.
2. it is according to claim 1 based on single trigger timer overload protecting circuit, it is characterised in that described first
Overload protecting circuit includes power supply chip A, passes through first resistor between the Vout pins and MONIN pins of the power supply chip A
It is connected, and Vout pins, MONIN pins is also connected with the input of the voltage converting amplifiers inside power supply chip A,
The output end of the voltage converting amplifiers connects two pole of avalanche optoelectronic of MCU control chips by the Vctrl pins of power supply chip A
Tube voltage control end.
3. it is according to claim 2 based on single trigger timer overload protecting circuit, it is characterised in that the power supply
Connection contact between the MONIN pins and the voltage converting amplifiers of chip A also sequentially passes through image current source circuit, electricity
The VAPD-OUT pins of source chip A, second resistance are connected with the working power input port A of avalanche photodide.
4. it is according to claim 3 based on single trigger timer overload protecting circuit, it is characterised in that described second
Connection contact between the working power input port A of resistance and avalanche photodide is by the first capacity earth, the mirror
Image current source circuit is also connected with the current monitoring end of MCU control chips by the MON pins of power supply chip A.
5. it is according to claim 3 based on single trigger timer overload protecting circuit, it is characterised in that described first
The resistance of resistance is 180 Ω, and the resistance of the second resistance is 10K Ω.
6. it is according to claim 3 based on single trigger timer overload protecting circuit, it is characterised in that the power supply
Chip A is LT3571 model chips.
7. it is according to claim 2 based on single trigger timer overload protecting circuit, it is characterised in that described second
Overload protecting circuit includes
Protection module 116 includes detector 120, detector 120 other parts and transmission line together with protection module 116
104 are physically separated；
Detector 120 include single triggering timer 124 and or OR logic elements 128 the first output for being coupled of input；
Second input of OR logic elements 128 is coupled with the output of timer 124；
The output of OR logic elements 128 is provided to control element 112 and provides the input of phase inverter 132；
The output of phase inverter 132 is also coupled with control element 112；
OR logic elements 128 and phase inverter 132 are provided bias voltage Vcc at corresponding power input.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610909564.6A CN106532654A (en) | 2016-10-19 | 2016-10-19 | Single-trigger timer-based overload protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610909564.6A CN106532654A (en) | 2016-10-19 | 2016-10-19 | Single-trigger timer-based overload protection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106532654A true CN106532654A (en) | 2017-03-22 |
Family
ID=58332651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610909564.6A Pending CN106532654A (en) | 2016-10-19 | 2016-10-19 | Single-trigger timer-based overload protection circuit |
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| CN (1) | CN106532654A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090121694A1 (en) * | 2007-11-12 | 2009-05-14 | Itt Manufacturing Enterprises, Inc. | Non-invasive load current sensing in low dropout (ldo) regulators |
| US20110156834A1 (en) * | 2009-12-30 | 2011-06-30 | Triquint Semiconductor, Inc. | Input-power overload-protection circuit |
| US20120062148A1 (en) * | 2010-09-10 | 2012-03-15 | Samsung Electronics Co., Ltd. | Luminescence driving apparatus, display apparatus, and driving method thereof |
| CN203522167U (en) * | 2013-10-11 | 2014-04-02 | 武汉电信器件有限公司 | Overload protective circuit of photodetector with avalanche photodiode and trans-impedance amplifier |
| CN104698333A (en) * | 2015-03-23 | 2015-06-10 | 广州播博科技有限公司 | Method and device for detecting and handling load faults of power amplifier |
| CN204408280U (en) * | 2015-03-04 | 2015-06-17 | 深圳市芯电威科技有限公司 | A kind of audio-frequency power amplifier overload protecting circuit |
-
2016
- 2016-10-19 CN CN201610909564.6A patent/CN106532654A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090121694A1 (en) * | 2007-11-12 | 2009-05-14 | Itt Manufacturing Enterprises, Inc. | Non-invasive load current sensing in low dropout (ldo) regulators |
| US20110156834A1 (en) * | 2009-12-30 | 2011-06-30 | Triquint Semiconductor, Inc. | Input-power overload-protection circuit |
| US20120062148A1 (en) * | 2010-09-10 | 2012-03-15 | Samsung Electronics Co., Ltd. | Luminescence driving apparatus, display apparatus, and driving method thereof |
| CN203522167U (en) * | 2013-10-11 | 2014-04-02 | 武汉电信器件有限公司 | Overload protective circuit of photodetector with avalanche photodiode and trans-impedance amplifier |
| CN204408280U (en) * | 2015-03-04 | 2015-06-17 | 深圳市芯电威科技有限公司 | A kind of audio-frequency power amplifier overload protecting circuit |
| CN104698333A (en) * | 2015-03-23 | 2015-06-10 | 广州播博科技有限公司 | Method and device for detecting and handling load faults of power amplifier |
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| PB01 | Publication | ||
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Application publication date: 20170322 |