CN106531860A - Quantum dot luminescent layer and device, and preparation methods thereof, luminescence module and display device - Google Patents
Quantum dot luminescent layer and device, and preparation methods thereof, luminescence module and display device Download PDFInfo
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- CN106531860A CN106531860A CN201611198580.5A CN201611198580A CN106531860A CN 106531860 A CN106531860 A CN 106531860A CN 201611198580 A CN201611198580 A CN 201611198580A CN 106531860 A CN106531860 A CN 106531860A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
Abstract
The present invention discloses a quantum dot luminescent layer and device, and preparation methods thereof, a luminescence module and a display device. The preparation method of the quantum dot luminescent layer comprises the steps: the quantum dots having the surfaces coated with ligand are dissolved in solvent to obtain the quantum dot solution; the quantum dot solution is deposited on the substrate or a function layer by employing the solution method to obtain a quantum dot luminescent layer; the quantum dot luminescent layer is arranged in a vacuum cavity, and organic metal compounds are pumped in to process for 0.5-30 mins, wherein the pressure in the cavity is 0.01-1mbar, the partial pressure of the organic metal compounds after gasification is 0.001-0.1mbar, the temperature in the cavity is 10-25 DEG C; and the quantum dot luminescent layer is taken out to obtain the quantum dot crosslinking luminescent layer. The quantum dot film is not only uniform flat and has a stable film, so that the quantum dot film is difficult to be redissolved to take away or wash away by the solvent when the subsequent other function layers are deposited so as to effectively improve the luminescence uniformity and the stability of the QLED.
Description
Technical field
The present invention relates to LED technology field, more particularly to a kind of quantum dot crosslinking luminescent layer and QLED devices and
Preparation method, illuminating module and display device.
Background technology
Quantum dot（Quantum dot, QD）Also referred to as semiconductor nano（Semiconductor
nanocrystal）, it is that a kind of particle radius are less than or close to the semi-conductor nano particles of Exciton Bohr Radius, which has respectively
Unique optical characteristics are planted, such as energy gap is easily tuned, extinction spectrum wide ranges, spectral purity are high, light/stable chemical performance
Deng.Light emitting diode with quantum dots is referred to as based on the light emitting diode of quantum dot（Quantum dot light-emitting
diode, QLED）, it is a kind of emerging display device, its structure and Organic Light Emitting Diode（Organic light-
emitting diode, OLED）It is similar, but compared with conventional light emitting diodes and OLED, QLED has excitation high, steady
The outstanding advantages such as qualitative good, life-span length, the good, preparation process is simple of colour temperature, being expected to the traditional inorganic and organic LED of replacement becomes Jing
Ji, stable and dynamical display floater of future generation.
The QLED devices of great majority research at present are prepared using solwution method processing, such as spin-coating method, print process etc., solwution method
Compared with evaporation coating method, not only method is simple, technique quick, and with low cost, beneficial to the extensive industry of QLED devices
Change and prepare.Even so, solwution method is more difficult to get the film layer of highly uniform densification, and prepared thin film often occurs thickness not
Uniformly, cover that complete, film layer crystallinity is bad, boundary defect is big, the unfavorable phenomenons such as infiltration are mutually dissolved between film layer, and therewith
Compare, evaporation coating method is readily obtained by precise control deposition velocity and atmosphere that thickness is homogeneous, excellent in crystallinity high-quality
Thin film.The film forming of solwution method is uneven, eventually results in that prepared QLED device repeatability is bad, performance difference between device
Greatly, and light-emitting area is uneven and unstable properties.Especially, core group stratification of the quantum dot light emitting layer as QLED devices,
Which plays vital effect to the performance of other film layers and device of following process into film uniformity.
For the deposition process of quantum dot light emitting layer, most of film-forming process are by the quantum of surface ligand functionalization at present
Point is dissolved in organic solvent, is configured to quantum dot solution or quantum dot ink, is then passed through spin coating or mode of printing is deposited on lining
On bottom or functional layer, other functions layer is sequentially depositing on quantum dot light emitting layer using same film build method then, is finally steamed
Plated electrode, obtains QLED devices.But, because quantum dot relies primarily on part and is dispersed in solution or ink, which still keeps
Granular state, particle size are larger compared with conventional ion or organic molecule, and during film forming, quantum dot granule is more difficult uniformly spreads over
On substrate, and as the further volatilization of solvent, the spacing between quantum dot granule can gradually be widened or be shunk, quantum can be aggravated
The inhomogeneities of point luminescent layer.Further, since quantum dot surface contains abundant organic ligand, post-depositional quantum dot still has very
Big chance in the solwution method film forming procedure of follow-up other functions layer, take away or directly wash away again by dissolving, causes quantum dot film layer
It is uneven, and the uniform performance of device luminance nonuniformity is relatively low.Even if using the solvent of indissoluble solution quantum dot, it is also difficult to avoid the mistake
The generation of journey, and because so, the selection of follow-up function layer material also can be limited by its optional solvent.
Therefore, prior art has yet to be improved and developed.
The content of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of quantum dot crosslinking luminescent layer and QLED
Device and preparation method, illuminating module and display device, it is intended to solve existing quantum dot film layer and cover uneven, uneven thickness
It is even, and the problem that the uniform performance of device luminance nonuniformity is relatively low.
Technical scheme is as follows：
A kind of quantum dot is crosslinked the preparation method of luminescent layer, wherein, including step：
First the quantum dot that Surface coating has part is dissolved in a solvent, quantum dot solution is obtained；
Then quantum dot solution is deposited on substrate or functional layer using solwution method, obtains quantum dot light emitting layer；
Then the quantum dot light emitting of gained is placed in vacuum cavity, is passed through organometallic complex, process 0.5 ~ 30 min,
Wherein the pressure of inside cavity is 0.01 ~ 1 mbar, and partial pressure of the organometallic complex Jing after gasification is 0.001 ~ 0.1 mbar,
The temperature of inside cavity is 10 ~ 25 °C；
Quantum dot light emitting layer after the completion of above-mentioned process is taken out, quantum dot crosslinking luminescent layer is obtained.
Described quantum dot is crosslinked the preparation method of luminescent layer, wherein, the part is organic ligand or mineral ligand, institute
Organic ligand is stated for long-chain organic ligand and/or short chain organic ligand；The organic ligand is TGA, mercaptopropionic acid, mercapto
Base butanoic acid, sulfydryl Oleic acid, mercapto glycerol, glutathion, mercaptoethylmaine, sulfydryl oleyl amine, tri octyl phosphine, trioctyl phosphine oxide, oil
Acid, aminoacid, alkyl acid, alkylamine, sulfonic acid, one or more in mercaptan；The mineral ligand is Cl-、Br-、S2-、HS-、
SnS4 4-、Sn2S6 4-、ZnCl4 2−、Zn(OH)4 2−In one or more.
Described quantum dot is crosslinked the preparation method of luminescent layer, wherein, the quantum dot be II-V compound semiconductors,
One or more in Group III-V compound semiconductor, IV-VI compound semiconductors and its nucleocapsid structure.
Described quantum dot is crosslinked the preparation method of luminescent layer, wherein, the solvent be normal octane, isobutyltrimethylmethane., toluene,
Benzene, chlorobenzene, dimethylbenzene, chloroform, acetone, hexamethylene, normal hexane, pentane, isopentane, N,N-dimethylformamide, N, N- bis-
Methylacetamide, N-Methyl pyrrolidone, dimethyl sulfoxide, hexamethyl phosphoramide, n-butyl ether, methyl phenyl ethers anisole, ethyl phenyl ether, benzene second
One or more in ketone, aniline, diphenyl ether.
Described quantum dot is crosslinked the preparation method of luminescent layer, wherein, the organometallic complex is alkyl aluminum, alkyl
One or more in lithium, alkyl indium, alkyl gallium, alkyl cadmium, alkyl tellurium, alkyl magnesium, zinc alkyl, amido lithium, aryl lithium.
A kind of quantum dot is crosslinked luminescent layer, wherein, the quantum dot crosslinking luminescent layer is using as above arbitrary described quantum
The preparation method of point crosslinking luminescent layer is prepared from.
A kind of preparation method of QLED devices, wherein, including：
Step A, hole injection layer and hole transmission layer are sequentially prepared on the substrate containing anode；
Step B, quantum dot crosslinking luminescent layer as above is prepared on hole transmission layer；
Step C, quantum dot crosslinking luminescent layer on be sequentially prepared electron transfer layer and negative electrode, obtain QLED devices.
A kind of QLED devices, wherein, include successively from bottom to top：Substrate containing anode, hole injection layer, hole transport
Layer, quantum dot as above crosslinking luminescent layer, electron transfer layer and negative electrode.
A kind of illuminating module, wherein, including QLED devices as above.
A kind of display device, wherein, including illuminating module as above.
Beneficial effect：The present invention is placed on volatile organometallic complex atmosphere quantum dot light emitting prepared by solwution method
In, the part that organometallic complex that is active and easily hydrolyzing is enriched with quantum dot surface Jing after gasification reacts, and makes point
Not independent quantum dot is crosslinked together, the quantum dot crosslinking luminescent layer after formation gas phase is cementing.Quantum dot film of the present invention is not
Only uniform ground, and film layer is stable, it is difficult to which solvent when being deposited by follow-up other functions layer dissolves again to be taken away or wash away, and has
Effect ground improves the uniformity of luminance and stability of QLED devices, in addition, the introducing of organometallic complex effectively can be passivated
Quantum dot surface defect, improves the luminous efficiency and luminescent lifetime of QLED devices.
Description of the drawings
Fig. 1 is a kind of flow chart of the preparation method preferred embodiment of QLED devices of the invention.
Fig. 2 is the cross-linking process schematic diagram of QLED devices in the embodiment of the present invention 1.
Fig. 3 is the structural representation of QLED devices in the embodiment of the present invention 1.
Specific embodiment
The present invention provides a kind of quantum dot crosslinking luminescent layer and QLED devices and preparation method, illuminating module and shows dress
Put, to make the purpose of the present invention, technical scheme and effect clearer, clear and definite, the present invention is described in more detail below.Should
Work as understanding, specific embodiment described herein only to explain the present invention, is not intended to limit the present invention.
A kind of quantum dot of the present invention is crosslinked the preparation method preferred embodiment of luminescent layer, wherein, including step：
First the quantum dot that Surface coating has part is dissolved in a solvent, quantum dot solution is obtained；
Then quantum dot solution is deposited on substrate or functional layer using solwution method, obtains quantum dot light emitting layer；
Then the quantum dot light emitting of gained is placed in vacuum cavity, is passed through organometallic complex, process 0.5 ~ 30 min,
Wherein the pressure of inside cavity is 0.01 ~ 1 mbar, and partial pressure of the organometallic complex Jing after gasification is 0.001 ~ 0.1 mbar,
The temperature of inside cavity is 10 ~ 25 °C；
Quantum dot light emitting layer after the completion of above-mentioned process is taken out, quantum dot crosslinking luminescent layer is obtained.
The present invention is placed on quantum dot light emitting prepared by solwution method in volatile organometallic complex atmosphere, it is active and
The part that the organometallic complex for easily hydrolyzing is enriched with quantum dot surface Jing after gasification reacts, and makes amount independently
Son point is crosslinked together, the quantum dot crosslinking luminescent layer after formation gas phase is cementing.In the present invention, the work of organometallic complex
Be quantum dot with part is crosslinked together with one side, improve quality of forming film, institute is made into quantum dot film not only uniform ground,
And film layer is stable, it is difficult to which solvent when being deposited by follow-up other functions layer dissolves again to be taken away or wash away, and effectively improves
The uniformity of luminance and stability of QLED devices, on the other hand, the introducing of organometallic complex can effectively be passivated quantum
Point surface defect, improves the luminous efficiency and luminescent lifetime of QLED devices.
Specifically, the quantum dot that Surface coating has part is dried in toluene or chloroform equal solvent being dissolved in after weighing, match somebody with somebody
Quantum dot solution is made, the wherein concentration of quantum dot solution is 1 ~ 50 mg/mL.Preferably, the part is organic ligand or nothing
Machine part, the organic ligand are long-chain organic ligand and/or short chain organic ligand；The organic ligand can be but be not limited to
It is TGA, mercaptopropionic acid, mercaptobutyric acid, sulfydryl Oleic acid, mercapto glycerol, glutathion, mercaptoethylmaine, sulfydryl oleyl amine, three pungent
One or more in base phosphine, trioctyl phosphine oxide, Oleic acid, aminoacid, alkyl acid, alkylamine, sulfonic acid, mercaptan etc.；The nothing
Machine part can be but be not limited to Cl-、Br-、S2-、HS-、SnS4 4-、Sn2S6 4-、ZnCl4 2−、Zn(OH)4 2−In one or more.
Wherein, the organic ligand contains-OH ,-COOH ,-NH2、-NH-、-SH、-CN、-SO3H、-SOOH、-NO2、-CONH2、-
One or more coordinating groups in CONH- ,-COCl ,-CO- ,-CHO ,-Cl ,-Br etc..It is highly preferred that the part is short chain
Organic ligand or mineral ligand.
Specifically, quantum dot of the present invention can be doped or non-doped II-V compound semiconductors, iii-v
One or more in compound semiconductor, IV-VI compound semiconductors and its nucleocapsid structure.
Specifically, solvent of the present invention can be but be not limited to normal octane, isobutyltrimethylmethane., toluene, benzene, chlorobenzene, dimethylbenzene,
Chloroform, acetone, hexamethylene, normal hexane, pentane, isopentane, N,N-dimethylformamide, DMAC N,N' dimethyl acetamide, N- first
Base ketopyrrolidine, dimethyl sulfoxide, hexamethyl phosphoramide, n-butyl ether, methyl phenyl ethers anisole, ethyl phenyl ether, 1-Phenylethanone., aniline, diphenyl ether etc.
In one or more.
Specifically, above-mentioned solwution method of the invention can be but be not limited to spin-coating method, dip-coating method, impact system, print process,
One kind in ink-jet method, spraying process, roll coating process, knife coating, casting method, strike, slit coating method, strip rubbing method
Or it is various.
Specifically, substrate of the present invention can be rigid substrate or flexible substrate, wherein the rigid substrate can be
But one or more be not limited in glass, tinsel；The flexible substrate can be but be not limited to poly terephthalic acid second
Diol ester（PET）, ethylene glycol terephthalate（PEN）, polyether-ether-ketone（PEEK）, polystyrene（PS）, polyether sulfone（PES）、
Merlon（PC）, poly- aryl acid esters（PAT）, polyarylate（PAR）, polyimides（PI）, polrvinyl chloride（PVC）, polyethylene
（PE）, polyvinylpyrrolidone（PVP）, one or more in textile fabric.
Specifically, functional layer of the present invention can be passed for conductive glass layer, metal electrode layer, hole injection layer, hole
In defeated layer, hole blocking layer, electron transfer layer, electron injecting layer, electronic barrier layer, electrode modification layer, isolated protective layer one
Plant or various；Wherein, the conductive glass layer can be but be not limited to indium doping stannum oxide（ITO）, fluorine-doped tin oxide
（FTO）, antimony-doped tin oxide（ATO）, aluminium-doped zinc oxide（AZO）In one or more.
Specifically, organometallic complex of the present invention is active and volatile organometallic complex, Ke Yiwei
But it is not limited to alkyl aluminum, lithium alkylide, alkyl indium, alkyl gallium, alkyl cadmium, alkyl tellurium, alkyl magnesium, zinc alkyl, amido lithium, aryl lithium
In one or more；More specifically, the organometallic complex can be but be not limited to trimethyl aluminium, triethyl aluminum, three
Aluminium isobutyl, diethyl zinc, lithium methide, ethyl-lithium, butyl lithium, three chloromethane lithiums, vinyl lithium, cyclopropyl lithium, phenyl lithium, diformazan
Base zinc, diethyl zinc, dimethyl cadmium, diethyl cadmium, tellurium diethyl, diisopropyl tellurium, trimethyl gallium, triethyl-gallium, trimethyl
Indium, dimethyl ethyl indium, antimony triethyl, diamyl magnesium, dimethyl diamyl magnesium, dimethylethyl amine are with the one kind or many in alane
Kind.The above-mentioned organometallic complex of the present invention can be reacted with part as described above.
A kind of quantum dot crosslinking luminescent layer of the present invention, wherein, the quantum dot crosslinking luminescent layer is using as above arbitrary institute
The preparation method of the quantum dot crosslinking luminescent layer stated is prepared from.The present invention prepares the quantum dot crosslinking luminescent layer of gained and covers equal
Even, thickness is uniform, and quality of forming film is high；Which is used in QLED devices, can effectively improve the uniformity of luminance of QLED devices, light
Efficiency and stability.
Fig. 1 is a kind of flow chart of the preparation method preferred embodiment of QLED devices of the present invention, as illustrated, its bag
Include：
Step S100, hole injection layer and hole transmission layer are sequentially prepared on the substrate containing anode；
Step S200, quantum dot crosslinking luminescent layer as above is prepared on hole transmission layer；
Step S300, quantum dot crosslinking luminescent layer on be sequentially prepared electron transfer layer and negative electrode, obtain QLED devices.
A kind of QLED devices preferred embodiment of the present invention, which includes from bottom to top successively：Substrate containing anode, hole
Implanted layer, hole transmission layer, quantum dot as above crosslinking luminescent layer, electron transfer layer and negative electrode.It is of the invention as described above
Quantum dot crosslinking luminescent layer be used in QLED devices, made by QLED devices not only there is higher uniformity of luminance and stable
Property, also with high luminous efficiency and luminescent lifetime.
Specifically, substrate of the present invention can be rigid substrate or flexible substrate, wherein the rigid substrate can be
But one or more be not limited in glass, tinsel；The flexible substrate can be but be not limited to poly terephthalic acid second
Diol ester（PET）, ethylene glycol terephthalate（PEN）, polyether-ether-ketone（PEEK）, polystyrene（PS）, polyether sulfone（PES）、
Merlon（PC）, poly- aryl acid esters（PAT）, polyarylate（PAR）, polyimides（PI）, polrvinyl chloride（PVC）, polyethylene
（PE）, polyvinylpyrrolidone（PVP）, one or more in textile fabric.
Specifically, anode of the present invention may be selected from indium doping stannum oxide（ITO）, fluorine-doped tin oxide（FTO）, Sb doped
Stannum oxide（ATO）, aluminium-doped zinc oxide（AZO）One or more in.
Specifically, hole injection layer of the present invention can be poly- (3,4-rthylene dioxythiophene)-polystyrolsulfon acid
（PEDOT:PSS）, CuPc（CuPc）, tetra- fluoro- 7,7' of 2,3,5,6-, tetra- cyanogen quinones of 8,8'--bismethane（F4-TCNQ）、2,3,6,
Six cyano group -1,4,5,8,9,12- of 7,10,11-, six azepine benzophenanthrenes（HATCN）, doped or non-doped transition metal oxide, mix
One or more in miscellaneous or undoped metal chalcogenide；Wherein, the transition metal oxide can be but be not limited to
MoO3、VO2、WO3、CrO3, one or more in CuO or their mixture；The metal chalcogenide can be but not
It is limited to MoS2、MoSe2、WS2、WSe2, one or more in CuS or their mixture.
Specifically, the material of hole transmission layer of the present invention may be selected from the organic material with cavity transmission ability, can
Think but be not limited to poly- (9,9- dioctyl fluorene-CO-N- (4- butyl phenyls) diphenylamines)（TFB）, polyvinylcarbazole（PVK）, it is poly-
(double (phenyl) benzidine of double (4- the butyl phenyls)-N of N, N', N'-)（poly-TPD）, it is poly- (double-N of 9,9- dioctyl fluorenes -co-,
N- phenyl -1,4- phenylenediamines)（PFB）, 4,4 ', 4 ' '-three (carbazole -9- bases) triphenylamine（TCTA）, 4,4'- bis- (9- carbazoles) connection
Benzene（CBP）, N, N '-diphenyl-N, N '-two (3- aminomethyl phenyls) -1,1 '-biphenyl -4,4 '-diamidogen（TPD）, N, N '-diphenyl-
N,N’-（1- naphthyls）- 1,1 '-biphenyl -4,4 '-diamidogen（NPB）, doped graphene, undoped Graphene, C60 or theirs is mixed
One or more in compound.The hole transport layer material is further selected from the inorganic material with cavity transmission ability, can be with
For but be not limited to NiO, MoO3、VO2、WO3、CrO3、CuO、MoS2、MoSe2、WS2、WSe2, in CuS or their mixture one
Plant or various.
Specifically, the material of electron transfer layer of the present invention can be but be not limited to N-shaped ZnO, TiO2、SnO2、Ta2O3、
AlZnO、Zn2SnO4、InSnO2、Alq3、Ca、Ba、CsF、LiF、CsCO3In one or more；Preferably, the electronics is passed
Defeated layer is N-shaped ZnO, N-shaped TiO2。
Specifically, negative electrode of the present invention can be but be not limited to various conductive carbon materials, conducting metal oxide material,
One or more in metal material；Wherein conductive carbon material can be but be not limited to doped or non-doped CNT, doping
Or undoped Graphene, doped or non-doped graphene oxide, C60, graphite, carbon fiber, in many sky carbon or their mixture
One or more；Conducting metal oxide material can be but be not limited in ITO, FTO, ATO, AZO or their mixture
One or more；Metal material can be but be not limited in Al, Ag, Cu, Mo, Au or their alloy one or more；
In wherein described metal material, its form can be but be not limited to dense film, nano wire, nanosphere, nanometer rods, nanocone,
One or more in nano-hollow ball or their mixture；Preferably, the negative electrode is Ag or Al.
Specifically, QLED devices of the present invention with partial encapsulation, full encapsulation or can not encapsulated.
Specifically, the preparation method of above layers of the present invention can be chemical method or Physical, and wherein chemical method can be
But it is not limited to sol-gel process, chemical bath deposition method, chemical vapour deposition technique, hydro-thermal method, coprecipitation, electrochemical deposition method
In one or more；Physical can be but be not limited to thermal evaporation coating method, electron beam evaporation deposition method, magnetron sputtering method,
One or more in multi-arc ion coating embrane method, electrolysis, method of electrostatic spinning.
It should be noted that, the invention is not restricted to the QLED devices of said structure, can also further include interfactial work ergosphere or
Interface-modifying layer, including but not limited to electronic barrier layer, hole blocking layer, electrode modification layer, the one kind in isolated protective layer or
It is various.
It should be noted that, the invention is not restricted to prepare above-mentioned autologous QLED devices, reciprocal form structure can also be prepared
QLED devices.And the QLED devices of reciprocal form structure can also further include interfactial work ergosphere or interface-modifying layer, including but not
One or more be limited in electronic barrier layer, hole blocking layer, electrode modification layer, isolated protective layer.
A kind of illuminating module of the present invention, wherein, including QLED devices as above.
A kind of display device of the present invention, wherein, including illuminating module as above.
Below by embodiment, the present invention is described in detail.
Embodiment 1
The preparation process of QLED devices is as follows：
One layer of PEDOT of spin coating on ITO substrates:PSS thin film is used as hole injection layer；
In PEDOT:In PSS layer, one layer of PVK of spin coating is used as hole transmission layer；
The spin coating layer of surface cladding mercaptopropionic acid on PVK layers（MPA）The CdSe@ZnS of part are used as quantum dot light emitting layer；
Then, by the Surface coating mercaptopropionic acid of above-mentioned preparation（MPA）The CdSe@ZnS of part are placed in vacuum cavity, are passed through
Trimethyl aluminium（(CH3)3Al）Gas, wherein inside cavity pressure are 0.05 mbar, and the partial pressure of trimethylaluminum gas is 0.01
Mbar, inside cavity temperature be 16 °C, process time be 5 min, process terminate after take out, obtain quantum dot crosslinking luminescent layer；
Then, above-mentioned preparation quantum dot crosslinking luminescent layer on spin coating layer of ZnO as electron transfer layer；
Finally, one layer of Al is deposited with ZnO layer, obtain QLED devices.Wherein, the cross-linking process schematic diagram of the present embodiment is shown in Fig. 2,
The structural representation of its QLED device is shown in Fig. 3, in Fig. 31 be ITO substrates, 2 be PEDOT:PSS layer, 3 be PVK layers, 4 be quantum dot
Crosslinking luminescent layer, 5 be ZnO layer, 6 be Al layers.
Embodiment 2
The preparation process of QLED devices is as follows：
One layer of PEDOT of spin coating on ITO substrates:PSS thin film is used as hole injection layer；
In PEDOT:In PSS layer, one layer of TFB layer of spin coating is used as hole transmission layer；
The spin coating layer of surface cladding mercaptopropionic acid on TFB layers（MPA）The CdSe@ZnS of part are used as quantum dot light emitting layer；
Then, by the Surface coating mercaptopropionic acid of above-mentioned preparation（MPA）The CdSe@ZnS of part are placed in vacuum cavity, are passed through
Trimethyl aluminium（(CH3)3Al）Gas, wherein inside cavity pressure are 0.05 mbar, and the partial pressure of trimethylaluminum gas is 0.02
Mbar, inside cavity temperature are 18 °C, and process time is 10 min, and process is taken out after terminating, and obtains quantum dot crosslinking luminous
Layer；
Then, above-mentioned preparation quantum dot crosslinking luminescent layer on spin coating layer of ZnO as electron transfer layer；
Finally, one layer of Al is deposited with ZnO layer, obtain QLED devices.
Embodiment 3
The preparation process of QLED devices is as follows：
One layer of PEDOT of spin coating on ITO substrates:PSS thin film is used as hole injection layer；
In PEDOT:In PSS layer, one layer of TFB of spin coating is used as hole transmission layer；
The spin coating layer of surface oleic acid-coated on TFB layers（OA）The CdSe@ZnS of part are used as quantum dot light emitting layer；
Then, by the coated with oleic acid of above-mentioned preparation（OA）The CdSe@ZnS of part are placed in vacuum cavity, are passed through three second
Base aluminum（(CH3CH2)3Al）Gas, wherein inside cavity pressure are 0.05 mbar, and the partial pressure of triethyl aluminum gas is 0.01
Mbar, inside cavity temperature are 18 °C, and process time is 20 min, and process is taken out after terminating, and obtains quantum dot crosslinking luminous
Layer；
Then, above-mentioned preparation quantum dot crosslinking luminescent layer on spin coating layer of ZnO as electron transfer layer；
Finally, one layer of Al is deposited with ZnO layer, obtain QLED devices.
Embodiment 4
The preparation process of QLED devices is as follows：
One layer of PEDOT of spin coating on ITO substrates:PSS thin film is used as hole injection layer；
In PEDOT:In PSS layer, one layer of PVK of spin coating is used as hole transmission layer；
Layer of surface cladding TGA is printed on PVK layers（TGA）The CdSe@CdS of part are used as quantum dot light emitting layer；
Then, by the Surface coating TGA of above-mentioned preparation（TGA）The CdSe@CdS layers of part are placed in vacuum cavity, are passed through
Triethyl aluminum（(CH3CH2)3Al）Gas, wherein inside cavity pressure are 0.05 mbar, and the partial pressure of triethyl aluminum gas is 0.01
Mbar, inside cavity temperature are 18 °C, and process time is 20 min, and process is taken out after terminating, and obtains quantum dot crosslinking luminous
Layer；
Then, above-mentioned preparation quantum dot crosslinking luminescent layer on spin coating layer of ZnO as electron transfer layer；
Finally, one layer of Al is deposited with ZnO layer, obtain QLED devices.
Embodiment 5
The preparation process of QLED devices is as follows：
One layer of PEDOT of spin coating on ITO substrates:PSS thin film is used as hole injection layer；
In PEDOT:In PSS layer, one layer of PVK layer of spin coating is used as hole transmission layer；
Layer of surface cladding dihydrolipoic acid is printed on PVK layers（DHLA）The CdSe@CdS of part are used as quantum dot light emitting layer；
Then, by the Surface coating dihydrolipoic acid of above-mentioned preparation（DHLA）The CdSe@CdS layers of part are placed in vacuum cavity,
It is passed through triethyl aluminum（(CH3CH2)3Al）Gas, wherein inside cavity pressure are 0.1 mbar, and the partial pressure of triethyl aluminum gas is
0.02 mbar, inside cavity temperature be 18 °C, process time be 30 min, process terminate after take out, obtain quantum dot crosslinking
Luminescent layer；
Then, above-mentioned preparation quantum dot crosslinking luminescent layer on spin coating layer of ZnO as electron transfer layer；
Finally, one layer of Al is deposited with ZnO layer, obtain QLED devices.
In sum, a kind of quantum dot crosslinking luminescent layer that the present invention is provided and QLED devices and preparation method, luminous mould
Group and display device.The present invention is placed on quantum dot light emitting prepared by solwution method in volatile organo-metallic compound atmosphere,
The organic ligand that organo-metallic compound that is active and easily hydrolyzing is enriched with quantum dot surface Jing after gasification reacts, and makes point
Not independent quantum dot is crosslinked together, the quantum dot crosslinking luminescent layer after formation gas phase is cementing.In the present invention, organic metal
On the one hand the effect of compound is the quantum dot with part is crosslinked together, improves quality of forming film, make institute into quantum dot film not
Only uniform ground, and film layer is stable, it is difficult to which solvent when being deposited by follow-up other functions layer dissolves again to be taken away or wash away, and has
Effect ground improves the uniformity of luminance and stability of QLED devices, and on the other hand, the introducing of organo-metallic compound can be effectively
Passivation quantum dot surface defect, improves the luminous efficiency and luminescent lifetime of quantum dot device.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, and for those of ordinary skills, can
To be improved according to the above description or be converted, all these modifications and variations should all belong to the guarantor of claims of the present invention
Shield scope.
Claims (10)
1. a kind of quantum dot is crosslinked the preparation method of luminescent layer, it is characterised in that including step：
First the quantum dot that Surface coating has part is dissolved in a solvent, quantum dot solution is obtained；
Then quantum dot solution is deposited on substrate or functional layer using solwution method, obtains quantum dot light emitting layer；
Then the quantum dot light emitting of gained is placed in vacuum cavity, is passed through organometallic complex, process 0.5 ~ 30 min,
Wherein the pressure of inside cavity is 0.01 ~ 1 mbar, and partial pressure of the organometallic complex Jing after gasification is 0.001 ~ 0.1 mbar,
The temperature of inside cavity is 10 ~ 25 °C；
Quantum dot light emitting layer after the completion of above-mentioned process is taken out, quantum dot crosslinking luminescent layer is obtained.
2. quantum dot according to claim 1 is crosslinked the preparation method of luminescent layer, it is characterised in that the part is organic
Part or mineral ligand, the organic ligand are long-chain organic ligand and/or short chain organic ligand；The organic ligand is sulfydryl
Acetic acid, mercaptopropionic acid, mercaptobutyric acid, sulfydryl Oleic acid, mercapto glycerol, glutathion, mercaptoethylmaine, sulfydryl oleyl amine, tri octyl phosphine,
One or more in trioctyl phosphine oxide, Oleic acid, aminoacid, alkyl acid, alkylamine, sulfonic acid, mercaptan；The mineral ligand is
Cl-、Br-、S2-、HS-、SnS4 4-、Sn2S6 4-、ZnCl4 2−、Zn(OH)4 2−In one or more.
3. quantum dot according to claim 1 is crosslinked the preparation method of luminescent layer, it is characterised in that the quantum dot is
In II-V compound semiconductors, Group III-V compound semiconductor, IV-VI compound semiconductors and its nucleocapsid structure one
Plant or various.
4. quantum dot according to claim 1 is crosslinked the preparation method of luminescent layer, it is characterised in that the solvent is just pungent
Alkane, isobutyltrimethylmethane., toluene, benzene, chlorobenzene, dimethylbenzene, chloroform, acetone, hexamethylene, normal hexane, pentane, isopentane, N, N- diformazans
Base Methanamide, DMAC N,N' dimethyl acetamide, N-Methyl pyrrolidone, dimethyl sulfoxide, hexamethyl phosphoramide, n-butyl ether, benzene first
One or more in ether, ethyl phenyl ether, 1-Phenylethanone., aniline, diphenyl ether.
5. quantum dot according to claim 1 is crosslinked the preparation method of luminescent layer, it is characterised in that the organometallic ligand
Compound be alkyl aluminum, lithium alkylide, alkyl indium, alkyl gallium, alkyl cadmium, alkyl tellurium, alkyl magnesium, zinc alkyl, amido lithium, in aryl lithium
One or more.
6. a kind of quantum dot is crosslinked luminescent layer, it is characterised in that the quantum dot crosslinking luminescent layer is using such as claim 1 ~ 5 times
The preparation method of the quantum dot crosslinking luminescent layer described in is prepared from.
7. a kind of preparation method of QLED devices, it is characterised in that include：
Step A, hole injection layer and hole transmission layer are sequentially prepared on the substrate containing anode；
Step B, quantum dot crosslinking luminescent layer as claimed in claim 6 is prepared on hole transmission layer；
Step C, quantum dot crosslinking luminescent layer on be sequentially prepared electron transfer layer and negative electrode, obtain QLED devices.
8. a kind of QLED devices, it is characterised in that include successively from bottom to top：Substrate containing anode, hole injection layer, hole
Transport layer, quantum dot as claimed in claim 6 crosslinking luminescent layer, electron transfer layer and negative electrode.
9. a kind of illuminating module, it is characterised in that including QLED devices as claimed in claim 8.
10. a kind of display device, it is characterised in that including illuminating module as claimed in claim 9.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7910400B2 (en) * | 2006-02-16 | 2011-03-22 | Samsung Electronics Co., Ltd. | Quantum dot electroluminescence device and method of fabricating the same |
| CN105070849A (en) * | 2015-07-14 | 2015-11-18 | Tcl集团股份有限公司 | Light-emitting device with compactly arranged quantum dot light-emitting layer and preparation method thereof |
| CN105098075A (en) * | 2015-07-14 | 2015-11-25 | Tcl集团股份有限公司 | Light-emitting device with compactly arranged quantum dot light-emitting layer and preparation method of light-emitting device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241553A (en) * | 2014-10-13 | 2014-12-24 | 深圳市华星光电技术有限公司 | OLED (organic light emitting diode) production method and OLED produced by same |
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-
2016
- 2016-12-22 CN CN201611198580.5A patent/CN106531860B/en active Active
-
2017
- 2017-08-25 WO PCT/CN2017/099079 patent/WO2018113334A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7910400B2 (en) * | 2006-02-16 | 2011-03-22 | Samsung Electronics Co., Ltd. | Quantum dot electroluminescence device and method of fabricating the same |
| CN105070849A (en) * | 2015-07-14 | 2015-11-18 | Tcl集团股份有限公司 | Light-emitting device with compactly arranged quantum dot light-emitting layer and preparation method thereof |
| CN105098075A (en) * | 2015-07-14 | 2015-11-25 | Tcl集团股份有限公司 | Light-emitting device with compactly arranged quantum dot light-emitting layer and preparation method of light-emitting device |
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