CN106531784A - Thin-film transistor, ultrasonic sensor, array substrate and display device - Google Patents
Thin-film transistor, ultrasonic sensor, array substrate and display device Download PDFInfo
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- CN106531784A CN106531784A CN201610914255.8A CN201610914255A CN106531784A CN 106531784 A CN106531784 A CN 106531784A CN 201610914255 A CN201610914255 A CN 201610914255A CN 106531784 A CN106531784 A CN 106531784A
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- 239000010409 thin film Substances 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- 238000003825 pressing Methods 0.000 claims description 31
- 230000005540 biological transmission Effects 0.000 claims description 26
- 239000012212 insulator Substances 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- 230000008859 change Effects 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000002604 ultrasonography Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 239000002033 PVDF binder Substances 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000284 resting effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- -1 IGZO) Chemical compound 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 238000003491 array Methods 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
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- 229920000131 polyvinylidene Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Human Computer Interaction (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Image Input (AREA)
Abstract
The invention provides a thin-film transistor, which comprises a gate, a gate insulating layer, a channel layer, a source and a drain, wherein the gate comprises a first electrode layer, a piezoelectric layer and a second electrode layer; the first electrode layer is arranged corresponding to the channel layer to serve as a control electrode of the thin-film transistor; and the piezoelectric layer is arranged between the first electrode layer and the second electrode layer and can generate a corresponding pressure sensing signal according to a touch press operation of a sensed object. The invention further provides an ultrasonic sensor, an array substrate and a display device. Compared with the prior art, the thin-film transistor provided by the invention integrates a switching function, a pressure sensing function and an ultrasonic sensing function, and is diverse in function, simple in structure and beneficial to miniaturization development.
Description
Technical field
The present invention relates to a kind of thin film transistor (TFT), the ultrasonic sensor using the thin film transistor (TFT), brilliant using the film
The array base palte of body pipe and the display device using the array base palte.
Background technology
Thin film transistor (TFT) (Thin Film Transistor, TFT) as switch module be widely used in sensor,
The field such as display or touch-control.Common TFT includes grid, gate insulator, channel layer, source electrode and drain electrode, gate insulator position
So that the two mutually insulated, source electrode and drain electrode two end in contact respectively with channel layer between grid and channel layer.When to TFT's
Grid applied voltage, the bottom of channel layer can form electron channel, and when to drain electrode also applied voltage, electrons are logical from source electrode
The electron channel stream of channel layer is crossed to drain electrode, makes path to be formed between source electrode and drain electrode.When stopping is to grid applied voltage, film
Transistor is closed, and the electron channel of channel layer bottom can disappear, and makes to become open circuit between source electrode and drain electrode.Such
The grid of TFT is only used for the electron channel being turned on and off in channel layer, and function is more single.Therefore, in an electronic, for example
Mobile phone etc., in order to realize various functions, it usually needs arrange many structural members and electronic component, so as to affect electronic installation
Overall dimensions and thickness.
The content of the invention
In view of the foregoing, it is necessary to one kind is provided and is conducive to multi-functional thin film transistor (TFT).
A kind of thin film transistor (TFT), including grid, gate insulator, channel layer, source electrode and drain electrode；The grid includes one
One electrode layer, a piezoelectric layer and a second electrode lay, the first electrode layer respective channel layer are arranged using as the thin film transistor (TFT)
Coordination electrode, the piezoelectric layer is arranged between the first electrode layer and the second electrode lay, and can touching according to sensed thing
Touch pressing operation and produce corresponding pressure-sensing signal.
A kind of ultrasonic sensor, including：One substrate, multiple above-mentioned thin film transistor (TFT)s and a contact layer, the plurality of film
Transistor is arranged in array in one surface of the substrate, and the contact layer is covered in the plurality of thin film transistor (TFT) away from the one of the substrate
Side, touches the surface that pressing operation acts on the contact layer.
A kind of array base palte, including：The a plurality of scan line being parallel to each other；It is a plurality of to be parallel to each other and exhausted with the scan line respectively
The intersecting data wire of edge；The multi-strip scanning line defines multiple pixel regions jointly with a plurality of data lines, and by adjacent two scan line
And the Minimum Area that adjacent two data wire is defined jointly defines a pixel region；In each pixel region, the array base palte
Further include an above-mentioned thin film transistor (TFT).
A kind of display device, including above-mentioned array base palte.
The thin film transistor (TFT) integrated switch function of the present invention, pressure-sensing function and ultrasonic wave sensing function, work(
Can be various, and structure simplifies and is beneficial to miniaturization.
Description of the drawings
Fig. 1 is the structure of the first better embodiment of the ultrasonic sensor with TFT embodiment of the present invention
Schematic diagram.
Fig. 2 is the structural representation of a thin film transistor (TFT) in Fig. 1.
Fig. 3 is the structural representation of the thin film transistor (TFT) of the second better embodiment of the invention.
In the array base palte that Fig. 4 is provided by the 3rd better embodiment of the invention, the planar structure of a pixel region is illustrated
Figure.
Structural representations of the Fig. 5 for the thin film transistor (TFT) in Fig. 4.
Fig. 6 is the structural representation of the thin film transistor (TFT) of the 4th better embodiment of the invention.
Main element symbol description
| Array base palte | 100 |
| Scan line | 101 |
| Data wire | 102 |
| Pixel region | 103 |
| Pixel electrode | 104 |
| Thin film transistor (TFT)/TFT | 110 |
| Grid/second grid | 111 |
| First electrode layer | 1111 |
| Piezoelectric layer | 1112 |
| The second electrode lay | 1113 |
| Gate insulator | 112 |
| Channel layer | 113 |
| Source electrode | 114 |
| Drain electrode | 115 |
| Passivation layer | 116 |
| First grid | 117 |
| Ultrasonic sensor | 120 |
| Substrate | 123 |
Following specific embodiment will further illustrate the present invention with reference to above-mentioned accompanying drawing.
Specific embodiment
Lower section will combine accompanying drawing and the present invention will be described more fully with, and show embodiments of the invention in the drawings.This
Invention can be realized by various multi-forms, and and should not be construed as limiting to only the embodiments set forth herein.Conversely, carrying
For these embodiments be in order that the present invention more fully with complete disclosure, and make those skilled in the art more fully
Solution the scope of the present invention.In order to high-visible, in figure, the size in layer and region is exaggerated.
Although it is appreciated that first, second grade these terms can be used herein to describe various elements, component, area
Domain, layer and/or part, but these elements, component, region, layer and/or part should not be limited only to these terms.These terms are only
It is to be used to distinguish element, component, region, layer and/or part and other element, component, region, layer and/or part.Cause
This, without departing from the teachings of the present invention, the Part I being discussed below, component, region, layer and/or part can be claimed
For the second element, component, region, layer and/or part.
Description specific embodiment is only used for used herein of proper noun and is not intended to limit the present invention.Such as institute here
, singulative " ", " one " and " being somebody's turn to do " are also intended to cover plural form, unless context understands that it is other feelings to indicate
Condition.It should also be understood that when term "comprising", " including " is used in the description, specifying the feature, entirety, step, behaviour
Make, the presence of element and/or part, but be not excluded for one or more of the other feature, entirety, step, operation, element and/or
The presence of part.
Embodiments of the invention are described herein with reference to profile, these profiles are Utopian embodiments of the invention（With
Configured intermediate）Schematic diagram.Thus, due to manufacturing process and/or tolerance, the shape difference of caused diagram can be prediction
's.Therefore, embodiments of the invention should not be construed as limited by the given shape of regions illustrated herein, and should include for example due to
The deviation of the shape for manufacturing and producing.Region shown in figure is only illustrative in itself, and their shape is not intended to diagram
The true form of device, and it is not intended to limit the scope of the present invention.
Unless otherwise defined, all terms used herein above（Including technology and scientific terminology）With with it is of the present invention
The implication identical implication is generally understood that by the those of ordinary skill in field.It is also understood that such as in general dictionary institute
The term of those of definition, should be interpreted that with the implication consistent with their implications in the environment of association area, and not
Should be explained with excessively idealization or excessively formal implication, unless clearly defined herein.
The thin film transistor (TFT) (Thin Film Transistor, TFT) of the present invention, which is except possessing as switch element
Outside basic function, sensing function has been also equipped with.The thin film transistor (TFT) can be used for any electricity for needing switching function and sensing function
On sub- device, such as sensing device, display device etc..Fig. 1 and Fig. 2 is refer to, this first embodiment is applied to surpass with TFT 110
Illustrate as a example by sonic sensor 120, wherein, the ultrasonic sensor 120 of present embodiment can be applicable to smart mobile phone, individual
The electronic equipments such as personal digital assistant, panel computer, game machine, medical apparatus.The ultrasonic sensor 120 can sense touch-control behaviour
Make, recognize fingerprint or detecting CBF, blood pressure, heart rate etc., the ultrasonic sensor 120 incorporates pressure-sensing function in which
In, present embodiment is illustrated as a example by recognizing fingerprint.The ultrasonic sensor 120 and a controller（It is not shown）Connection,
The controller can converse touch pressing force size, and send corresponding control instruction according to the size for touching pressing force.Can be with
Understand, TFT 110 is not limited in being applied in ultrasonic sensor 120, can be also used for other sensors or other electricity
In sub-device.
The ultrasonic sensor 120 includes substrate 123, multiple TFT 110 and a contact layer（It is not shown）.It is the plurality of
TFT110 is arranged in certain rule on substrate 123, in the present embodiment, and multiple TFT 110 are spaced and are in matrix type
A surface of substrate 123 is arranged in, the contact layer is covered on 110 arrays of TFT.
Further, each TFT 110 include grid 111, gate insulator 112, channel layer 113, source electrode 114 and
Drain electrode 115.In present embodiment, the TFT 110 is 111 structure of top-gated pole.The source electrode 114 is both formed in this with the drain electrode 115
123 surface of substrate, and setting separated from one another.The channel layer 113 is formed in the source electrode 114 and the drain electrode 115 away from the substrate
123 side, and be revealed between the source electrode 114 and the drain electrode 115.The gate insulator 112 be covered in the channel layer 113,
On the source electrode 114 and the drain electrode 115.The grid 111 is formed at the side on the gate insulator 112 away from the channel layer 113,
And to should channel layer 113 arrange.
At least partly TFT 110 has pressure-sensing function.Specifically, the grid 111 of at least part of TFT 110 includes
One electrode layer 1111, piezoelectric layer 1112 and the second electrode lay 1113.First electrode layer 1111 and the second electrode lay 1113 can be selected
Made with transparent or opaque conductive material.First electrode layer 1111 and the second electrode lay 1113 can select transparent or impermeable
Bright conductive material is made.The piezoelectric layer 1112 is piezoelectric, for example, can be poly- vinylidene difluoride (Polyvinylidene
Fluoride, PVDF), lead titanate piezoelectric ceramics（Piezoelectric ceramic transducer, PZT）Or the two
Composite.The second electrode lay 1113 and the grid 111 are conductive metallic material, such as silver-colored (Ag), copper (Cu), molybdenum
(Mo), tin indium oxide（ITO）, zinc oxide（Zno）, poly- (3,4-rthylene dioxythiophene)-polystyrolsulfon acid（Poly (3,4-
Ethylenedioxythiophene), PEDOT）, CNT（Carbon Nanotube, CNT）, nano silver wire (Ag
Nano wire, ANW）And Graphene（graphene）In one kind or compound, but be not limited.
The 1111 respective channel layer 113 of first electrode layer is arranged, for controlling the open and close of TFT 110, so as to reality
The switching function of existing TFT 110.The piezoelectric layer 1112 is located between first electrode layer 1111 and the second electrode lay 1113, and can root
Corresponding sensing electric current is produced in first electrode layer 1111 or the second electrode lay 1113 according to the pressure being subject to, so as to be collectively forming
One pressure sensitive unit, the pressure sensitive unit act on the touch pressing force of the contact layer surface for detecting.In this enforcement
Example in, first electrode layer 1111 is formed on the gate insulator 112, piezoelectric layer 1112 be arranged in the first electrode layer away from
The side of the gate insulator 112, the second electrode lay 1113 are arranged on the piezoelectric layer 1112 away from first electrode layer 1111
Side.At the same time, the second electrode lay 1113 and first electrode layer 1111 by 1112 sandwiched of piezoelectric layer wherein, also common shape
Into a ultrasonic transmission/reception unit.So as to the ultrasonic sensor 120 has multiple pressure sensitive units or multiple ultrasonic waves
Transmit-Receive Unit.
When TFT 110 is controlled, can be by time-multiplexed mode, so that in the different periods, it is right selectively to perform
The function of answering.For example, in first time period, TFT 110 is used as switching function, and now first electrode layer 1111 receives drive signal
Opened with controlling TFT 110；In second time period, TFT 110 is used as pressure-sensing function, now first electrode layer 1111 or the
Two electrode layers 1113 are used as sensing electrode；In the 3rd time period, TFT 110 performs ultrasonic wave sensing function, by further
Timing separation, the pressure sensitive unit had not only sent ultrasonic wave but also had received ultrasonic wave, and sent and received ultrasonic wave and replace at times
Carry out.
Preferably, when the pressure sensitive unit does not detect touch pressing force, the ultrasonic transmission/reception unit is not started
Function, to save power consumption.When the pressure sensitive unit detects touch pressing force, trigger its own and start the ultrasonic wave
The function of Transmit-Receive Unit, and when pressure sensitive unit detects touch pressing force and disappears, stop performing the ultrasonic transmission/reception list
The function of unit.The plurality of ultrasonic transmission/reception unit can recognize that the fingerprint for being placed on the contact layer surface, and form correspondence user
The image information of fingerprint is sent to the controller, and the controller is by the figure from the plurality of ultrasonic transmission/reception unit for receiving
As information output a to display device, most the display device shows fingerprint image finally.It is appreciated that the TFT of the present embodiment
110, a time period, in addition to possessing a kind of single switching function, pressure-sensing function or ultrasonic wave sensing function, may be used also
In the same time period, to realize two or more function.
TFT 110 is described more particularly below as the operation principle and mode of ultrasonic wave sensing function.The pressure sensing
Unit is capacitive pressure sensing unit.When the contact layer surface has touch action to produce, the second electrode lay 1113 with should
The distance between first electrode layer 1111 changes to be caused between the second electrode lay 1113 and the first electrode layer 1111
Electric capacity changes, and the change is transferred to the controller, and the controller is conversed by the variable quantity of electric capacity and acts on the contact
The touch pressing force size of layer surface.Wherein, the presence of the piezoelectric layer 1112 increase the second electrode lay 1113 with this first
Dielectric coefficient between electrode layer 1111, becomes apparent from the change of electric capacity, detects so as to be favorably improved the pressure sensitive unit
The sensitivity of pressure.The controller further according to sending control instruction by pressing force size is touched, controls the second electrode
The voltage of layer 1113, makes to form voltage difference between the second electrode lay 1113 and the first electrode layer 1111, and then makes the piezoelectricity
Layer 1112 in the presence of voltage produces vibration and sends ultrasonic wave.The controller also controls the ultrasonic transmission/reception unit and is sending
After ultrasonic wave, reception state is switched to according to presetting, and after ultrasonic wave is received switch to and send ultrasonic wave state, so
Repeatedly, when the contact layer surface does not produce touch pressing, and the pressure sensitive unit does not detect touch pressing force, the control
Device controls the ultrasonic transmission/reception unit and quits work, and enters resting state.
Wherein, can preset, when the size for touching pressing force reaches certain limit, the controller just starts the ultrasound
Ripple Transmit-Receive Unit is started working.Additionally, the first electrode layer 1111 of the grid 111 is redefined for no-voltage or an initial electricity
Pressure, cut-in voltage of the initial voltage less than corresponding TFT 110.When the ultrasonic transmission/reception unit switches to reception state, and
When receiving ultrasonic wave, the piezoelectric layer 1112 produces electric charge and is circulated to the first electrode layer 1111 of the grid 111, so as to open
Open corresponding TFT 110, further by the TFT 110 by electric signal transmission to the controller, the controller according to array arrange
The electric signal transmitted by the plurality of ultrasonic transmission/reception unit of cloth is converted into corresponding fingerprint image.110 integrated switch of TFT
Function, pressure-sensing function and ultrasonic wave sensing function are, vdiverse in function, and structure simplifies and is beneficial to miniaturization.
In sum, it will be understood that can according to specific needs, by first electrode layer in actual product application
1111 or the second electrode lay 1113 apply different signals sensing first electrode layer 1111 or the second electrode lay 1113 on produce
Electric signal, to realize all or part of function of the TFT 110.When the TFT 110 touches pressing force due to sensing, just open
Originate and send ultrasonic wave and sensed, resting state is processed when not sensing touch pressing force, therefore, it is possible to save energy consumption.
Fig. 3 is refer to, the ultrasonic sensor 120 of this second embodiment is passed with the ultrasonic wave of above-mentioned first embodiment
120 structure of sensor is essentially identical, and difference is that the TFT 110 of present embodiment is oxidation semiconductor TFT, and is tied for bigrid
Structure.It should be noted that in present embodiment, continuing to use the mark of above-mentioned embodiment with above-mentioned first embodiment identical element
Number.The TFT 110 includes first grid 117, gate insulator 112, channel layer 113, source electrode 114, drain electrode 115, passivation layer
116th, second grid 111.The first grid 117 is located at the substrate 123（As shown in Figure 1）On, the gate insulator 112 is covered in
On the substrate 123 and the first grid 117, the channel layer 113 located at gate insulator 112 away from the substrate 123 side and
Positioned at the position corresponding with the first grid 117.The source electrode 114 and the drain electrode 115 two terminations respectively with the channel layer 113
Touch, the source electrode 114 and 115 setting separated from one another of drain electrode, the channel layer 113 be revealed in the source electrode 114 and the drain electrode 115 it
Between.The gate insulator 112 is used for making the first grid 117 mutually exhausted with the channel layer 113, the source electrode 114 and the drain electrode 115
Edge.The passivation layer 116 is covered in the channel layer 113, the source electrode 114 and the drain electrode 115, and it is blunt that the second grid 111 is formed at this
Change layer 116 to be correspondingly arranged with the first grid 117 away from the source electrode 114 and the side of the drain electrode 115, and the second grid 111.
At least partly TFT 110 has pressure-sensing function.Specifically, the second grid 111 of at least part of TFT 110 is wrapped
Include first electrode layer 1111, piezoelectric layer 1112 and the second electrode lay 1113.
Additionally, the second grid 111 is redefined for no-voltage or an initial voltage, the initial voltage and the first grid
Cut-in voltage of the summation of 117 initial voltage less than corresponding TFT 110.110 cut-in voltages of TFT of the bigrid 111 are
The sum total of the cut-in voltage of the first grid 117 and the second grid 111, can be by the TFT's 110 by 111 structure of bigrid
Cut-in voltage is reduced.
Fig. 4 and Fig. 5 is refer to, the TFT 110 of this 3rd embodiment is applied to a display device（It is not shown）In, this shows
With a display surface for facing user, the display device is included for driving the array base palte 100 for showing showing device.Wherein,
The display device can be organic electroluminescence display device and method of manufacturing same (organic light emitting display, OLED) or liquid
Crystal device（Liquid crystal display, LCD）, present embodiment illustrated by taking LCD as an example.Need explanation
It is that for convenience of description, present embodiment element same as above continues to use component symbol above.
The array base palte 100 include a plurality of scan line 101 being parallel to each other, it is a plurality of be parallel to each other and respectively with the scan line
The intersecting data wire 102 of 101 insulation.The multi-strip scanning line 101 defines multiple pixel regions 103 jointly with a plurality of data lines 102,
And the Minimum Area for being defined by adjacent two scan line 101 and adjacent two data wire 102 jointly defines a pixel region 103.Every
In one pixel region 103, the array base palte 100 further includes a public electrode wire（It is not shown）, be arranged at the scan line
101 with a TFT 110 of 102 infall of data wire, a pixel electrode 104 and a public electrode（It is not shown）.The common electrical
It is used for forming electric field between pole and the pixel electrode 104, is rotated with the liquid crystal molecule for driving liquid crystal indicator, carry out realizing picture
Face shows.
Each TFT 110 includes grid 111, gate insulator 112, channel layer 113, source electrode 114 and drain electrode 115.
In present embodiment, the TFT 110 is top grid structure.The source electrode 114 is both formed in a substrate with the drain electrode 115（Do not indicate）
Surface, and setting separated from one another.The channel layer 113 is formed at the side in the source electrode 114 and the drain electrode 115 away from the substrate,
And be revealed between the source electrode 114 and the drain electrode 115.The gate insulator 112 be covered in the channel layer 113, the source electrode 114 and
In the drain electrode 115.The grid 111 is formed at the side on the gate insulator 112 away from the channel layer 113, and to leading to
Channel layer 113 is arranged.
Further, each pixel electrode 104 is arranged in each pixel region 103, and with TFT described in
110 drain electrode 115 is electrically connected with.Meanwhile, the grid of each TFT 110 111 and source electrode 114 respectively with scan line described in
101 and one data wire 102 be electrically connected with.In addition, each public electrode and public electrode wire described in are electrically connected with, it is outside
Common electric voltage be sent to the public electrode via the public electrode wire.
When the fine scanning line 101 is received from scan drive circuit（It is not shown）The scanning voltage of offer is simultaneously loaded onto this
During the grid 111 of TFT 110, the multiple columns of data lines 102 is received from data drive circuit（It is not shown）The data voltage of offer, and
It is loaded onto the source electrode 114 of corresponding TFT 110.If now the TFT 110 is in opening, the data voltage is sent to this
TFT 110 is simultaneously loaded onto the pixel electrode 104 from its drain electrode 115.At the same time, the public electrode is received from public electrode wire
From the extraneous common electric voltage for providing, thus can produce driving electric field to control liquid between the pixel electrode 104 and the public electrode
Brilliant molecule is rotated, so as to realize that image shows.Wherein, the scan drive circuit is electrically connected with the controller, the controller control
Make the scan drive circuit and export scanning voltage.
At least partly TFT 110 has pressure-sensing function.Specifically, the grid 111 of at least part of TFT 110 includes
One electrode layer 1111, piezoelectric layer 1112 and the second electrode lay 1113.The piezoelectric layer 1112 is piezoelectric, for example, can be poly- two
Fluorine Asia ethene (Polyvinylidene Fluoride, PVDF), lead titanate piezoelectric ceramics（piezoelectric ceramic
transducer,PZT）Or the composite of the two.The second electrode lay 1113, the first grid 117 and the second grid
111 are conductive metallic material, such as silver-colored (Ag), copper (Cu), molybdenum (Mo), tin indium oxide（ITO）, zinc oxide（Zno）, it is poly- (3,
4- ethene dioxythiophenes)-polystyrolsulfon acid（Poly (3,4-ethylenedioxythiophene), PEDOT）, CNT
（Carbon Nanotube, CNT）, nano silver wire (Ag nano wire, ANW）And Graphene（graphene）In one kind
Or compound, but it is not limited.The channel layer 113 is semiconductor material, for example, can be indium gallium zinc oxide（Indium
Gallium Zinc Oxide, IGZO）, indium-zinc oxide (Indium Zinc Oxide, IZO), gallium zinc oxide (Gallium
Zinc Oxide, GZO), zinc tin oxide (Zinc Tin Oxide, ZTO), or zinc oxide (Zinc Oxide, ZnO) etc..
The 1111 respective channel layer 113 of first electrode layer is arranged, for controlling the open and close of TFT 110, so as to reality
The switching function of existing TFT 110.The piezoelectric layer 1112 is located between first electrode layer 1111 and the second electrode lay 1113, and can root
Corresponding sensing electric current is produced in first electrode layer 1111 or the second electrode lay 1113 according to the pressure being subject to, so as to be collectively forming
One pressure sensitive unit, the pressure sensitive unit act on the touch pressing force of the contact layer surface for detecting.In this enforcement
Example in, first electrode layer 1111 is formed on the gate insulator 112, piezoelectric layer 1112 be arranged in the first electrode layer away from
The side of the gate insulator 112, the second electrode lay 1113 are arranged at the side on the piezoelectric layer 1112 away from the grid 111.
At the same time, 1112 sandwiched of piezoelectric layer wherein, is also collectively forming a ultrasonic wave with the grid 111 by the second electrode lay 1113
Transmit-Receive Unit.So as to, the plurality of pressure sensitive unit or the plurality of ultrasonic transmission/reception unit are collectively forming ultrasonic wave biography
Sensor 120.The ultrasonic sensor 120 can recognize that fingerprint or realize the touch controllable function of display device.The ultrasonic sensor 120
With a controller（It is not shown）Connection, the controller can converse touch pressing force size, and according to the size of touch pressing force
Send corresponding control instruction.
When TFT 110 is controlled, can be by time-multiplexed mode, so that in the different periods, it is right selectively to perform
The function of answering.For example, in first time period, TFT 110 is used as switching function, and now first electrode layer 1111 receives drive signal
Opened with controlling TFT 110；In second time period, TFT 110 is used as pressure-sensing function, now first electrode layer 1111 or the
Two electrode layers 1113 are used as sensing electrode；In the 3rd time period, TFT 110 performs ultrasonic wave sensing function, by further
Timing separation, the pressure sensitive unit had not only sent ultrasonic wave but also had received ultrasonic wave, and sent and received ultrasonic wave and replace at times
Carry out.Specifically, when ultrasonic wave sensing function is performed, the 3rd time period was divided at least one transmission sub- time period and at least
One receives the sub- time period, is sending the sub- time period, and the ultrasonic transmission/reception unit performs ultrasonic wave sending function, receives the sub- time
Section, the ultrasonic transmission/reception unit perform the function of receiving ultrasonic wave.
Preferably, when the pressure sensitive unit detects touch pressing force, trigger its own and start the ultrasonic transmission/reception
The function of unit.The plurality of ultrasonic transmission/reception unit can recognize that the fingerprint for being placed on the display surface, and form correspondence user and refer to
The image information of line is sent to the controller, and the controller is by the image from the plurality of ultrasonic transmission/reception unit for receiving
To the display device, most the display device shows fingerprint image to information output finally.It is appreciated that the TFT 110 of the present embodiment
A time period, in addition to possessing a kind of single switching function, pressure-sensing function or ultrasonic wave sensing function, can with
The same time period, realize two or more function.
TFT 110 is described more particularly below as the operation principle and mode of ultrasonic wave sensing function.The pressure sensing
Unit is capacitive pressure sensing unit.When the contact layer surface has touch action to produce, the second electrode lay 1113 with should
The distance between first electrode layer 1111 changes to be caused between the second electrode lay 1113 and the first electrode layer 1111
Electric capacity changes, and the change is transferred to the controller, and the controller is conversed by the variable quantity of electric capacity and acts on the contact
The touch pressing force size of layer surface.Wherein, the presence of the piezoelectric layer 1112 increase the second electrode lay 1113 with this first
Dielectric coefficient between electrode layer 1111, becomes apparent from the change of electric capacity, detects so as to be favorably improved the pressure sensitive unit
The sensitivity of pressure.The controller further according to sending control instruction by pressing force size is touched, controls the second electrode
The voltage of layer 1113, makes to form voltage difference between the second electrode lay 1113 and the first electrode layer 1111, and then makes the piezoelectricity
Layer 1112 in the presence of voltage produces vibration and sends ultrasonic wave.The controller also controls the ultrasonic transmission/reception unit and is sending
After ultrasonic wave, reception state is switched to immediately, and switch to after ultrasonic wave is received and send ultrasonic wave state, so repeatedly, directly
Touch pressing is not produced to the display surface surface, when the pressure sensitive unit does not detect touch pressing force, the controller is controlled
The ultrasonic transmission/reception unit quits work, and enters resting state.
Wherein, can preset, when the size for touching pressing force reaches certain limit, the controller just starts the ultrasound
Ripple Transmit-Receive Unit is started working.Additionally, the first electrode layer 1111 of the grid 111 is redefined for no-voltage or an initial electricity
Pressure, cut-in voltage of the initial voltage less than corresponding TFT 110.When the ultrasonic transmission/reception unit switches to reception state, and
When receiving ultrasonic wave, the piezoelectric layer 1112 produces electric charge and is circulated to the first electrode layer 1111 of the grid 111, so as to open
Corresponding TFT 110, further by the TFT 110 by electric signal transmission to the controller, the controller is according to array arrangement
The electric signal that transmitted of the plurality of ultrasonic transmission/reception unit be converted into corresponding fingerprint image.The controller controls the scanning and drives
Dynamic circuit is supplied to the time of the scanning voltage of the scan line 101 and the plurality of TFT 110 to perform the ultrasound sensors work(
Can time stagger, i.e. the plurality of TFT 110 realizes the detecting function of the ultrasound sensors and the display device at times
Show driving function.In more detail, the TFT 110 realizes that detecting touches pressing force, transmission ultrasonic wave, reception ultrasound and involves display
Driving function is carried out at times.
In change embodiment, the ultrasonic sensor 120 can also be used for detecting position of touch information, and now, this shows
Showing device is embedded touch display device.The controller is transmitted according to the plurality of ultrasonic transmission/reception unit of array arrangement
Electric signal is converted into corresponding position of touch information.The 110 integrated switch functions of TFT, pressure-sensing function, ultrasonic wave sensing
Function and touch-control sensing function are, vdiverse in function, and structure simplifies and is beneficial to miniaturization.
In sum, it will be understood that can according to specific needs, by first electrode layer in actual product application
1111 or the second electrode lay 1113 apply different signals sensing first electrode layer 1111 or the second electrode lay 1113 on produce
Electric signal, to realize all or part of function of the TFT 110.
Fig. 6 is refer to, the display device of this 4th embodiment is basic with the display device structure of the 3rd embodiment
Identical, difference is that the TFT 110 of the display device is oxidation semiconductor TFT 110, and is 111 structure of bigrid.Need
Bright, present embodiment and above-mentioned 3rd embodiment identical element continue to use the element numbers of the 3rd embodiment.
Often the TFT 110 include first grid 117, gate insulator 112, channel layer 113, source electrode 114, drain electrode 115, it is blunt
Change layer 116, second grid 111.The first grid 117 is located at a substrate（Do not indicate）On, the gate insulator 112 is covered in this
On substrate and the first grid 117, the channel layer 113 located at gate insulator 112 away from the substrate side and positioned at this
The corresponding position of first grid 117.The source electrode 114 and the drain electrode 115 two end in contact respectively with the channel layer 113, the source
Pole 114 and 115 setting separated from one another of drain electrode, the channel layer 113 are revealed between the source electrode 114 and the drain electrode 115.The grid
Insulating barrier 112 is used for making the grid 111 mutually insulate with the channel layer 113, the source electrode 114 and the drain electrode 115.The passivation layer 116
The channel layer 113, the source electrode 114 and the drain electrode 115 is covered in, the second grid 111 is formed at the passivation layer 116 away from the source
The side of pole 114 and the drain electrode 115, and the second grid 111 is correspondingly arranged with the first grid 117.
Each pixel electrode 104 is arranged in each pixel region 103（As shown in Figure 4）, and with described in one
The drain electrode 115 of TFT 110 is electrically connected with.Meanwhile, the first grid 117 and second grid 111 of each TFT 110 are with one
The scan line 101 is electrically connected with, and 110 source electrodes 114 of each TFT are electrically connected with a data wire 102.In addition, each institute
State public electrode wire described in public electrode and to be electrically connected with, outside common electric voltage is sent to the public affairs via the public electrode wire
Common electrode.
At least partly TFT 110 has pressure-sensing function.Specifically, the second grid 111 of at least part of TFT 110 is wrapped
Include first electrode layer 1111, piezoelectric layer 1112 and the second electrode lay 1113.
Additionally, the second grid 111 is redefined for no-voltage or an initial voltage, the initial voltage and the first grid
Cut-in voltage of the summation of 117 initial voltage less than corresponding TFT 110.110 cut-in voltages of two grid TFT are should
The sum total of the cut-in voltage of first grid 117 and the second grid 111, can opening the TFT 110 by 111 structure of bigrid
Open voltage reduction.The ultrasonic transmission/reception unit switches to reception state, and when receiving ultrasonic wave, the piezoelectric layer 1112 produces electricity
Lotus is simultaneously circulated to the second grid 111, makes the second grid 111 and the total voltage of the first grid 117 reach opening for TFT 110
Voltage is opened, so as to open corresponding TFT 110.
Above example is only unrestricted to illustrate technical scheme, although with reference to preferred embodiment to this
It is bright to be described in detail, it will be understood by those within the art that, technical scheme can be modified
Or equivalent, without deviating from the spirit and scope of technical solution of the present invention.
Claims (12)
1. a kind of thin film transistor (TFT), including grid, gate insulator, channel layer, source electrode and drain electrode；Characterized in that, the grid
Pole includes first electrode layer, piezoelectric layer and the second electrode lay, and the first electrode layer respective channel layer is arranged using as film crystalline substance
The coordination electrode of body pipe, the piezoelectric layer are arranged between the first electrode layer and the second electrode lay.
2. thin film transistor (TFT) as claimed in claim 1, it is characterised in that the thin film transistor (TFT) timesharing performs at least following functions
In two functions：
In first time period, the first electrode layer receives drive signal and is opened with controlling the thin film transistor (TFT)；
In second time period, the first electrode layer or the second electrode lay are used as sensing electrode, sensing touch pressing force；
In the 3rd time period, the thin film transistor (TFT) performs ultrasonic wave sensing function.
3. thin film transistor (TFT) as claimed in claim 1, it is characterised in that in first time period, the first electrode layer is received drives
Dynamic signal is opened with controlling the thin film transistor (TFT), at the same time, the first electrode layer or the second electrode lay as sensing electrode,
Sensing touch pressing force；In second time period, the thin film transistor (TFT) performs ultrasonic wave sensing function.
4. thin film transistor (TFT) as claimed in claim 1, it is characterised in that in first time period, the first electrode layer or this
Two electrode layers are used as sensing electrode, sensing touch pressing force；In second time period, the first electrode layer receives drive signal to control
Make the thin film transistor (TFT) to open, at the same time, the thin film transistor (TFT) performs ultrasonic wave sensing function.
5. thin film transistor (TFT) as claimed in claim 1, it is characterised in that when the thin film transistor (TFT) senses touch pressing force
When, trigger the thin film transistor (TFT) and perform ultrasonic wave sensing function, when the thin film transistor (TFT) does not sense touch pressing force, this is thin
Film transistor ultrasonic wave does not start or stop execution ultrasonic wave sensing function.
6. thin film transistor (TFT) as claimed in claim 1, it is characterised in that the first electrode layer, the piezoelectric layer and second electrode
Layer is collectively forming a ultrasonic transmission/reception unit.
7. thin film transistor (TFT) as claimed in claim 6, it is characterised in that when ultrasonic wave sensing function is performed, during by the 3rd
Between section be divided at least one transmission sub- time period and at least one and receive sub- time period, sending the sub- time period, the ultrasonic wave is received
Bill unit performs ultrasonic wave sending function, receives the sub- time period, and the ultrasonic transmission/reception unit performs the function of receiving ultrasonic wave.
8. thin film transistor (TFT) as claimed in claim 1, it is characterised in that the thin film transistor (TFT) is double-grid structure, the grid
Including first grid and second grid, the second grid includes the first electrode layer, the piezoelectric layer and the second electrode layer by layer.
9. thin film transistor (TFT) as claimed in claim 1, it is characterised in that the material of the first electrode layer and the second electrode lay
For tin indium oxide.
10. a kind of ultrasonic sensor, it is characterised in that include：It is one substrate, multiple as described in any one of claim 1 to 9
Thin film transistor (TFT) and a contact layer, the plurality of thin film transistor (TFT) are arranged in array in one surface of the substrate, and the contact layer is covered in
Side of the plurality of thin film transistor (TFT) away from the substrate, touches the surface that pressing operation acts on the contact layer.
11. a kind of array base paltes, it is characterised in that include：The a plurality of scan line being parallel to each other；It is a plurality of be parallel to each other and respectively with
The intersecting data wire of the scan line insulation；The multi-strip scanning line defines multiple pixel regions jointly with a plurality of data lines, and by phase
The Minimum Area that adjacent two scan lines and adjacent two data wire are defined jointly defines a pixel region；In each pixel region,
The array base palte is further included just like the thin film transistor (TFT) described in any one of claim 1 to 9.
12. a kind of display devices, it is characterised in that including array base palte as claimed in claim 11.
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| CN107195665A (en) * | 2017-06-23 | 2017-09-22 | 京东方科技集团股份有限公司 | A kind of array base palte, its preparation method, display panel and display device |
| CN107293553A (en) * | 2017-06-19 | 2017-10-24 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display panel and display device |
| CN107563273A (en) * | 2017-07-06 | 2018-01-09 | 麦克思商务咨询(深圳)有限公司 | Ultrasonic wave sensing module and preparation method thereof, electronic installation |
| CN107977602A (en) * | 2017-10-10 | 2018-05-01 | 成都安瑞芯科技有限公司 | Ultrasonic fingerprint identification module, module, device and electronic equipment |
| WO2018120692A1 (en) * | 2016-12-27 | 2018-07-05 | 京东方科技集团股份有限公司 | Display device and method for controlling display device |
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| CN112236745A (en) * | 2018-06-06 | 2021-01-15 | 剑桥触控科技有限公司 | Pressure sensing apparatus and method |
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Effective date of registration: 20180814 Address after: 610041 689 cooperation Road, hi-tech West District, Chengdu, Sichuan Applicant after: Cheng Cheng Technology (Chengdu) Co., Ltd. Applicant after: Interface Optoelectronic (Shenzhen) Co., Ltd. Address before: 518057 Room 201, building A, 1 Bay Road, Shenzhen Hong Kong cooperation zone, Qianhai, Shenzhen, Guangdong, Nanshan District Applicant before: MIICS BUSINESS CONSULTING (SHENZHEN) CO., LTD. |
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