CN106531718B - A kind of programmable fuse structure - Google Patents
A kind of programmable fuse structure Download PDFInfo
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- CN106531718B CN106531718B CN201611096971.6A CN201611096971A CN106531718B CN 106531718 B CN106531718 B CN 106531718B CN 201611096971 A CN201611096971 A CN 201611096971A CN 106531718 B CN106531718 B CN 106531718B
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- groove isolation
- plough groove
- fleet plough
- isolation structure
- programmable fuse
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention provides a kind of programmable fuse structures, comprising: substrate；The fleet plough groove isolation structure on surface over the substrate, the top surface of the fleet plough groove isolation structure are higher than the upper surface of the substrate；A programmable fuse in fleet plough groove isolation structure, the programmable fuse include two first electrodes, two the first vertical components for being separately connected two first electrodes and the first level part for connecting two the first vertical components；Wherein, two first electrodes are located at the both ends of the upper surface of the fleet plough groove isolation structure, two the first vertical components have the first length along the depth direction of the fleet plough groove isolation structure, the first level part is covered by the isolated material of fleet plough groove isolation structure, and has the first depth in the fleet plough groove isolation structure.
Description
Technical field
The present invention relates to a kind of semiconductor devices, are espespecially related to a kind of programmable fuse structure.
Background technique
The forming method of conventional polysilicon fuse, comprising: provide a substrate, the substrate has isolation structure；Institute
State one layer of silica of substrate surface thermal oxide；In the silica and isolation structure surface deposit polycrystalline silicon, to the polysilicon
It is doped；It etches the polysilicon and forms the narrow fuse-wires structure in the wide centre in both ends.The fuse-wires structure that this method is formed, firstly,
It is unfavorable for the specific location of control fusing, may result in fusing on substrate, since overheat will affect other devices on substrate
The normal work of part；Secondly, the substrate surface area that fuse occupies is larger, the device for being unfavorable for densification is integrated, and multiple flat
Capacitor and inductor between capable fuse is larger, is easy mutual crosstalk.
Summary of the invention
Based on solving the above problems, the present invention provides a kind of programmable fuse structures, comprising:
Substrate；
The top surface of the fleet plough groove isolation structure on surface over the substrate, the fleet plough groove isolation structure is higher than the substrate
Upper surface；
A programmable fuse in fleet plough groove isolation structure, the programmable fuse include two first electrodes, difference
It connects two the first vertical components of two first electrodes and connects the first level part of two the first vertical components；
Wherein, two first electrodes are located at the both ends of the upper surface of the fleet plough groove isolation structure, two the first vertical components
There is the first length along the depth direction of the fleet plough groove isolation structure, the first level part is by fleet plough groove isolation structure
Isolated material covering, and in the fleet plough groove isolation structure have the first depth.
According to an embodiment of the invention, the programmable fuse structure is polysilicon fuse structure.
According to an embodiment of the invention, the width of two electrode is greater than the width of the vertical component and the horizontal component
Degree.
According to an embodiment of the invention, the vertical component and the horizontal component is of same size.
According to an embodiment of the invention, the isolated material of institute's fleet plough groove isolation structure is silica.
According to an embodiment of the invention, further including another programmable fuse structure in the fleet plough groove isolation structure.
According to an embodiment of the invention, another programmable fuse includes two second electrodes, is separately connected two second electricity
Two the second vertical components of pole and the second horizontal component for connecting two the second vertical components；Wherein, two second electrode position
In another both ends of the upper surface of the fleet plough groove isolation structure, two the second vertical components are along the fleet plough groove isolation structure
Depth direction there is the second length, second horizontal component is covered by the isolated material of fleet plough groove isolation structure, and in institute
Stating has the second depth in fleet plough groove isolation structure.
According to an embodiment of the invention, second horizontal component and the first level part are in the angle of a non-zero.
Technical solution of the present invention saves the occupancy of substrate surface using fuse-wires structure is arranged in fleet plough groove isolation structure
Area, and being mutually isolated for multiple fuse-wires structures is carried out using the isolation structure of fleet plough groove isolation structure, it is simple and easy；In addition,
Multiple fuse-wires structures have certain angle in projection, will not be parallel, interfere polycrystalline that is smaller, also, utilizing vertical component
The thinner thickness of silicon, the biggish characteristic of resistance, control carry out electric smelting herein and break, and realize accurate control fusing position, avoid to lining
The high temperature at bottom influences.
Detailed description of the invention
Fig. 1 is the sectional view of programmable fuse structure of the present invention；
Fig. 2 is the top view of programmable fuse structure of the present invention.
Specific embodiment
Referring to Fig. 1 and 2, the present invention provides a kind of programmable fuse structures, comprising: substrate 1, it is however generally that, the substrate 1
It is certainly also likely to be other semiconductor substrates for silicon substrate；Fleet plough groove isolation structure 2 in 1 upper surface of substrate is described shallow
Groove isolation construction 2 has oxide-isolated material, and the top surface of the fleet plough groove isolation structure 2 is higher than the upper of the substrate 1
Surface；A programmable fuse in fleet plough groove isolation structure 2, the fuse-wires structure are polysilicon fuse structure；It is described can
Programmable fuse includes two first electrode 3a and 4a, two first vertical components 6a and 7a for being separately connected two first electrode 3a and 4a
And the first level part 5a of connection two first vertical components 6a and 7a；Wherein, two first electrode 3a and 4a are located at described
The both ends of the upper surface of fleet plough groove isolation structure 2, two the first vertical component 6a and 7a are along the fleet plough groove isolation structure 2
Depth direction has the first length, and the first level part 5a is covered by the isolated material of fleet plough groove isolation structure, and in institute
Stating has the first depth in fleet plough groove isolation structure 2.
Further include another fuse-wires structure, it is described state another programmable fuse include two second electrode 3b and 4b, be separately connected
The second of two the second vertical component 6b and 7b and connection two second the vertical components 6b and 7b of two second electrode 3b and 4b
Horizontal component 5b；Wherein, two second electrode 3b and 4b are located at another both ends of the upper surface of the fleet plough groove isolation structure 2, and two
A second vertical component 6b and 7b has the second length, second water along the depth direction of the fleet plough groove isolation structure 2
Flat part 5b is covered by the isolated material of fleet plough groove isolation structure 2, and deep with second in the fleet plough groove isolation structure 2
Degree.Wherein, second horizontal component and the first level part are in the angle of a non-zero, and preferably 90 degree.Described two
One and second electrode width be greater than first and second vertical component and first and second horizontal component width.Institute
State the of same size of the first and second vertical components and first and second horizontal component.
According to an embodiment of the invention, according to an embodiment of the invention, further including multiple in fleet plough groove isolation structure
Other fuse-wires structures, other the multiple fuse-wires structures are identical as the fuse-wires structure, different, the depth of horizontal component
Degree is different, has the different depth in groove isolation construction.
Finally, it should be noted that obviously, the above embodiment is merely an example for clearly illustrating the present invention, and simultaneously
The non-restriction to embodiment.For those of ordinary skill in the art, it can also do on the basis of the above description
Other various forms of variations or variation out.There is no necessity and possibility to exhaust all the enbodiments.And thus drawn
The obvious changes or variations that Shen goes out are still in the protection scope of this invention.
Claims (7)
1. a kind of programmable fuse structure, comprising:
Substrate；
The top surface of the fleet plough groove isolation structure on surface over the substrate, the fleet plough groove isolation structure is higher than the upper of the substrate
Surface；
A programmable fuse in fleet plough groove isolation structure, the programmable fuse include two first electrodes, are separately connected
Two the first vertical components of two first electrodes and the first level part for connecting two the first vertical components；
Wherein, two first electrodes are located at the both ends of the upper surface of the fleet plough groove isolation structure, two the first vertical components along
The depth direction of the fleet plough groove isolation structure has the first length, the first level part by fleet plough groove isolation structure every
It is covered from material, and there is the first depth in the fleet plough groove isolation structure；It further include another in the fleet plough groove isolation structure
One programmable fuse structure.
2. programmable fuse structure according to claim 1, which is characterized in that the programmable fuse structure is polysilicon
Fuse-wires structure.
3. programmable fuse structure according to claim 1, which is characterized in that the width of two first electrode is greater than institute
State the width of the first vertical component and the first level part.
4. programmable fuse structure according to claim 3, which is characterized in that first vertical component and described first
Horizontal component it is of same size.
5. programmable fuse structure according to claim 1, which is characterized in that the isolated material of institute's fleet plough groove isolation structure
For silica.
6. programmable fuse structure according to claim 1, which is characterized in that another programmable fuse includes two the
Second level of two two electrodes, two the second vertical components for being separately connected two second electrodes and connection the second vertical components
Part；Wherein, two second electrodes are located at another both ends of the upper surface of the fleet plough groove isolation structure, two the second vertical components
There is the second length along the depth direction of the fleet plough groove isolation structure, second horizontal component is by fleet plough groove isolation structure
Isolated material covering, and in the fleet plough groove isolation structure have the second depth.
7. programmable fuse structure according to claim 6, which is characterized in that second horizontal component and described first
Horizontal component is in the angle of a non-zero.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611096971.6A CN106531718B (en) | 2016-12-02 | 2016-12-02 | A kind of programmable fuse structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611096971.6A CN106531718B (en) | 2016-12-02 | 2016-12-02 | A kind of programmable fuse structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106531718A CN106531718A (en) | 2017-03-22 |
| CN106531718B true CN106531718B (en) | 2019-02-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611096971.6A Active CN106531718B (en) | 2016-12-02 | 2016-12-02 | A kind of programmable fuse structure |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111095546B (en) * | 2018-08-24 | 2022-09-02 | 深圳市为通博科技有限责任公司 | Electric fuse, manufacturing method thereof and memory unit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1976035A (en) * | 2005-11-30 | 2007-06-06 | 国际商业机器公司 | CMOS compatible shallow-trench e-fuse structure and method of manufacturing the same |
| CN102130092A (en) * | 2010-01-20 | 2011-07-20 | 中芯国际集成电路制造(上海)有限公司 | Fuse device and preparation method thereof |
| CN103794549A (en) * | 2012-10-31 | 2014-05-14 | 中芯国际集成电路制造(上海)有限公司 | Method for forming semiconductor structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8896090B2 (en) * | 2013-02-22 | 2014-11-25 | International Business Machines Corporation | Electrical fuses and methods of making electrical fuses |
-
2016
- 2016-12-02 CN CN201611096971.6A patent/CN106531718B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1976035A (en) * | 2005-11-30 | 2007-06-06 | 国际商业机器公司 | CMOS compatible shallow-trench e-fuse structure and method of manufacturing the same |
| CN102130092A (en) * | 2010-01-20 | 2011-07-20 | 中芯国际集成电路制造(上海)有限公司 | Fuse device and preparation method thereof |
| CN103794549A (en) * | 2012-10-31 | 2014-05-14 | 中芯国际集成电路制造(上海)有限公司 | Method for forming semiconductor structure |
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Effective date of registration: 20181226 Address after: 226600 No. 8, Xiao Xing Avenue, Chengdong Town, Haian City, Nantong, Jiangsu. Applicant after: NANTONG YIXUAN INDUSTRIAL DESIGN Co.,Ltd. Address before: 226300 window of science and technology, No. 266, New Century Avenue, Nantong hi tech Zone, Nantong, Jiangsu Applicant before: NANTONG WOTE OPTOELECTRONICS TECHNOLOGY CO.,LTD. |
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Effective date of registration: 20221222 Address after: 256599 East 600m south of the intersection of Yangao Road X030 and Bohua Road, Jingbo Industrial Park, Boxing County Economic Development Zone, Binzhou City, Shandong Province Patentee after: Boxing County Xingye Logistics Co.,Ltd. Address before: 226600 No. 8, Xiao Xing Avenue, Chengdong Town, Haian City, Nantong, Jiangsu. Patentee before: NANTONG YIXUAN INDUSTRIAL DESIGN Co.,Ltd. |