CN106521623A - Thermal field structure of horizontal pulling forming equipment for silicon wafers - Google Patents
Thermal field structure of horizontal pulling forming equipment for silicon wafers Download PDFInfo
- Publication number
- CN106521623A CN106521623A CN201611242142.4A CN201611242142A CN106521623A CN 106521623 A CN106521623 A CN 106521623A CN 201611242142 A CN201611242142 A CN 201611242142A CN 106521623 A CN106521623 A CN 106521623A
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- Prior art keywords
- graphite
- base
- thermal field
- field structure
- pincers pot
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a thermal field structure of horizontal pulling forming equipment for silicon wafers. The thermal field structure comprises a furnace, base graphite and a crucible. The base graphite and the crucible are arranged in the furnace, the crucible is arranged at the upper end of the base graphite, two sides of the crucible are fixedly connected with the base graphite by graphite hooks, silicon melting regions and temperature control regions are formed on the crucible and are communicated with one another, and two graphite heating bars are arranged below the crucible; a temperature regulation graphite felt block and a heat-insulation graphite felt block are arranged below the temperature control regions of the crucible, and the temperature regulation graphite felt block is connected with inserting rods; an opening is formed in a side of the base graphite and is communicated with the temperature control regions of the crucible, and horizontal pulling base plates are mounted on the outer side of the opening. The thermal field structure of the horizontal pulling forming equipment for the silicon wafers has the advantages that the thermal field structure is reasonable in design, high in practicality and convenient to assemble, the quality of the silicon wafers can be effectively improved, and internal defects of the silicon wafers can be reduced.
Description
Technical field
The present invention relates to photovoltaic equipment preparation field, more particularly to a kind of silicon wafer horizontal lifting former thermal field
Structure.
Background technology
Using being one of study hotspot of current solar energy photovoltaic material with silicon growth technology production solar energy-level silicon wafer, mesh
Before in photovoltaic field, polycrystalline silicon ingot casting technology is a kind of technology of main flow.Silicon chip can be made by polycrystal silicon ingot cutting
Make.Due to the limitation of current scroll saw technology, silicon ingot processing there are about 50% silicon materials loss into silicon chip.In order to reduce silicon chip
Production cost, nearest technical research concentrate on and silicon chip are directly produced from molten silicon, mainly have two kinds of basic band silicon at present
Preparation method, a kind of is vertical method of pulling up, and such as deckle feeds film（EFG）Band silicon technology, line drawstring silicon technology（SR）, complicated and confused web
Dress band silicon technology（D-Web）Deng another kind of is horizontal method of pulling up, mainly including HRG band silicon growth technologies, RGS backing tape silicon
Growth method etc..Most of band silicon technology is under test at present, and which is main reason is that in high temperature silicon chip manufacture process, meeting
Excessive impurity is introduced by equipment so that silicon chip is difficult to the purity requirement for reaching solar energy-level silicon wafer, will in crystallization process
The high cooldown rate asked produces excessive defect in making crystal, impact of the pulling-on piece speed to Si wafer quality is larger, it is difficult to seek
Growth rate and with the balance between siliceous amount.The improvement that HRG is mainly carried out on the basis of EFG, its crystalline solidification are crystallized
Occur in liquid surface, chip is not come in contact with crucible wall, enter in chip so as to reduce impurity.
Therefore, it is necessary to design and develop a kind of reasonable in design in prior art basis, it is easy to assembly, based on water
The silicon chip of flat rubber belting silicon growth technology lifts the thermal field structure of former.Document Helenbrook B T, Kellerman P,
Carlson F, et al. Experimental and numerical investigation of the horizontal
ribbon growth process[J]. Journal of Crystal Growth, 2016, 453:163-
172.Oliveros G A, Liu R, Sridhar S, et al. Silicon Wafers for Solar Cells by
Horizontal Ribbon Growth[J]. Ind.eng.chem.res, 2013, 52(9):3239-3246. this was done
Certain research.
The content of the invention
The technical problem to be solved in the present invention is：Overcome the deficiencies in the prior art, there is provided a kind of silicon wafer horizontal lifting shaping
Equipment thermal field structure, solves
The technical solution adopted for the present invention to solve the technical problems is：A kind of silicon wafer horizontal lifts former thermal field structure,
Including body of heater and the base graphite being arranged in body of heater and pincers pot, the pincers pot is arranged on the upper end of base graphite, the pincers
The both sides Jing graphite hook of pot is fixedly connected with base graphite, forms silicon wafer melting zone and temperature-controlled area on the pincers pot,
The silicon wafer melting zone and temperature-controlled area are communicated, and are provided with 2 for clamping the graphite heated by pot below the pincers pot
Heating rod；Temperature adjustment graphite felt block and insulation graphite felt block, the temperature adjustment graphite felt are provided with below the pincers pot temperature control zone
Block is connected to the inserted link for controlling its motion；
The side of the base graphite arranges opening, and the opening is connected with the temperature-controlled area of pincers pot, the open outer side peace
Fill the substrate for level lifting.
Further, the two ends of the graphite heating rod are fixedly installed graphite side respectively, the graphite heating rod
Two ends are connected with graphite side respectively, and one of graphite side connection graphite electrode is simultaneously connected with power supply.
Further, the pincers pot bottom is offered for accommodating the through hole of graphite heating rod, the graphite heating rod
Installation portion is structure as a whole with pincers pot, is coaxial non-contact structure between the heating part of the graphite heating rod and through hole.
Further, side heater is provided between the both sides of the pincers pot and base graphite inner chamber, two sidepieces add
Hot device is fixedly connected with the graphite side of both sides, and Jing graphite electrodes is connected with power supply.
Further, support meanss are additionally provided with the body of heater, the support meanss include support base and many
Support bar, each support bar of the base graphite Jing are fixed in support base；The graphite side is fixedly installed on support base
On.
Further, the base graphite upper end is provided with graphite felt cover plate, and the graphite felt cover plate covers pincers pot.
The invention has the beneficial effects as follows：The horizontal silicon chip of the present invention lifts the thermal field structure of former, and structure design is closed
Reason, it is practical, it is easy to assembly, the quality of silicon chip is effectively improved, the internal flaw of silicon chip is reduced, and is improved heat energy utilization
Rate, reduces energy consumption, reduces for the consumption of silicon materials, production cost is greatly reduced.
Description of the drawings
The present invention is further described below in conjunction with the accompanying drawings.
Fig. 1 is the schematic diagram for clamping pot；
Fig. 2 is former thermal field structure schematic diagram；
Fig. 3 is the lateral view of base graphite；
Wherein, 1, base graphite, 2, pincers pot, 3, graphite heating rod, 41, temperature adjustment graphite felt, 42, insulation graphite felt, 43, inserted link,
5th, graphite hook, 6, graphite side, 7, graphite electrode, 8, support base, 9, support bar, 10, opening, 11, graphite felt cover plate.
Specific embodiment
Presently in connection with specific embodiment, the present invention is further illustrated.These accompanying drawings be simplified schematic diagram only with
The basic structure of the illustration explanation present invention, therefore which only shows the composition relevant with the present invention.
As shown in Figure 1 to Figure 3, a kind of silicon wafer horizontal lifts former thermal field structure, including body of heater and is arranged on stove
Internal base graphite 1 and pincers pot 2, clamp the upper end that pot 2 is arranged on base graphite 1, clamp both sides Jing graphite hook 5 and the bottom of pot 2
Bedstone ink 1 is fixedly connected, and forms silicon wafer melting zone and temperature-controlled area, silicon wafer melting zone and temperature-controlled area phase on pincers pot 2
It is logical, clamp and 2 are provided with below pot 2 for clamping the graphite heating rod 3 heated by pot 2；Arrange below pincers 2 temperature-controlled area of pot
There are 41 pieces of temperature adjustment graphite felt and 42 pieces of graphite felt of insulation, 41 pieces of temperature adjustment graphite felt is connected to the inserted link 43 for controlling its motion.Insert
Bar 43 drives the 41 pieces of up and down motions of temperature adjustment graphite felt, control pincers pot 2 bottom air circulation, and then realizes the temperature adjustment to clamping pot 2.
The side of base graphite 1 arranges opening 10, and opening 10 is connected with the temperature-controlled area of pincers pot 2, is pacified on the outside of opening 10
Fill the substrate for level lifting.
The two ends of graphite heating rod 3 are fixedly installed graphite side 6 respectively, the two ends of graphite heating rod 3 respectively with graphite
Side plate 6 connects, and the connection graphite electrode 7 of one of graphite side 6 is simultaneously connected with power supply.
Pincers pot 2 bottom is offered for accommodating the through hole of graphite heating rod 3, and the installation portion of graphite heating rod 3 with pot 2 is clamped is
Integrative-structure, is coaxial non-contact structure between the heating part of graphite heating rod 3 and through hole.
Side heater, two side heaters and both sides are provided between 1 inner chamber of both sides and base graphite of pincers pot 2
Graphite side 6 is fixedly connected, and Jing graphite electrodes 7 is connected with power supply.
Support meanss are additionally provided with body of heater, support meanss include support base 8 and many support bars 9, base graphite 1
The each support bars of Jing 9 are fixed in support base 8；Graphite side 6 is fixedly installed in support base 8.
1 upper end of base graphite is provided with graphite felt cover plate 11, and graphite felt cover plate 11 covers pincers pot 2.
Insulation graphite felt main cavity of the base graphite 1 using integral type, centre is provided with a rectangular channel for placing crucible.
The horizontal silicon chip that the present invention is provided lifts the thermal field structure of equipment, employs bottom surface heater and side heater,
Bottom surface heater is graphite heating rod 3, and graphite heating rod 3 and crucible employ the structure of integral type, reduce the heat of heater
Radiation length, improves the input of heat, can quickly improve temperature, shorten the heat time, it is to avoid because of heat time mistake
Heat-energy losses caused by long, and can effectively ensure the Temperature Distribution of film surface, simultaneously because crucible employs melting
The structure that area and temperature control are distinguished, it is ensured that the continuous supply of silicon crystal material so that silicon chip lifting process can be grown
Time is carried out, and is improve the utilization rate of the energy, is effectively reduced production cost.
With the above-mentioned desirable embodiment according to the present invention as enlightenment, by above-mentioned description, relevant staff is complete
Various change and modification can be carried out in the range of without departing from this invention technological thought entirely.The technology of this invention
Property scope is not limited to the content on specification, it is necessary to its technical scope is determined according to right.
Claims (6)
1. a kind of silicon wafer horizontal lifts former thermal field structure, it is characterized in that, including body of heater and the bottom being arranged in body of heater
Bedstone ink（1）With pincers pot（2）, the pincers pot（2）It is arranged on base graphite（1）Upper end, the pincers pot（2）Both sides Jing graphite
Hook（5）With base graphite（1）It is fixedly connected, the pincers pot（2）Upper formation silicon wafer melting zone and temperature-controlled area, the silicon
Brilliant melting zone and temperature-controlled area are communicated, the pincers pot（2）Lower section is provided with 2 for clamping pot（2）The graphite for being heated
Heating rod（3）；The pincers pot（2）Temperature adjustment graphite felt is provided with below temperature-controlled area（41）Block and insulation graphite felt（42）Block,
The temperature adjustment graphite felt（41）Block is connected to the inserted link for controlling its motion（43）；
The base graphite（1）Side arrange opening（10）, the opening（10）With pincers pot（2）Temperature-controlled area connection,
The opening（10）Outside is installed by the substrate for level lifting.
2. silicon wafer horizontal according to claim 1 lifts former thermal field structure, it is characterized in that, the graphite heating rod
（3）Two ends be fixedly installed graphite side respectively（6）, the graphite heating rod（3）Two ends respectively with graphite side（6）Even
Connect, one of graphite side（6）Connection graphite electrode（7）And be connected with power supply.
3. silicon wafer horizontal according to claim 2 lifts former thermal field structure, it is characterized in that, the pincers pot（2）Bottom
Portion is offered for accommodating graphite heating rod（3）Through hole, the graphite heating rod（3）Installation portion with pincers pot（2）It is integrated
Structure, the graphite heating rod（3）Heating part and through hole between be coaxial non-contact structure.
4. silicon wafer horizontal according to claim 2 lifts former thermal field structure, it is characterized in that, the pincers pot（2）'s
Both sides and base graphite（1）The graphite side of side heater, two side heaters and both sides is provided between inner chamber（6）Gu
It is fixed to connect, and Jing graphite electrodes（7）And be connected with power supply.
5. silicon wafer horizontal according to claim 2 lifts former thermal field structure, it is characterized in that, also sets in the body of heater
Support meanss are equipped with, the support meanss include support base（8）And many support bars（9）, the base graphite（1）Jing is each
Support bar（9）It is fixed on support base（8）On；The graphite side（6）It is fixedly installed on support base（8）On.
6. silicon wafer horizontal according to claim 1 lifts former thermal field structure, it is characterized in that, the base graphite
（1）Upper end is provided with graphite felt cover plate（11）, the graphite felt cover plate（11）Cover pincers pot（2）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611242142.4A CN106521623A (en) | 2016-12-29 | 2016-12-29 | Thermal field structure of horizontal pulling forming equipment for silicon wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611242142.4A CN106521623A (en) | 2016-12-29 | 2016-12-29 | Thermal field structure of horizontal pulling forming equipment for silicon wafers |
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| Publication Number | Publication Date |
|---|---|
| CN106521623A true CN106521623A (en) | 2017-03-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611242142.4A Pending CN106521623A (en) | 2016-12-29 | 2016-12-29 | Thermal field structure of horizontal pulling forming equipment for silicon wafers |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107217296A (en) * | 2017-04-28 | 2017-09-29 | 常州大学 | A kind of silicon wafer horizontal growth apparatus and method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001287908A (en) * | 2000-04-04 | 2001-10-16 | Sharp Corp | Silicon sheet manufacturing apparatus and solar cell using silicon sheet by the apparatus |
| CN102260903A (en) * | 2011-07-11 | 2011-11-30 | 浙江碧晶科技有限公司 | Method for growing thin silicon crystals |
| CN202717880U (en) * | 2012-08-03 | 2013-02-06 | 江苏中立新能源股份有限公司 | Novel polysilicon ingot casting furnace thermal field structure |
| CN203256368U (en) * | 2013-04-09 | 2013-10-30 | 嘉兴学院 | Pulling-method crystal growing apparatus capable of implementing continuous growth |
-
2016
- 2016-12-29 CN CN201611242142.4A patent/CN106521623A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001287908A (en) * | 2000-04-04 | 2001-10-16 | Sharp Corp | Silicon sheet manufacturing apparatus and solar cell using silicon sheet by the apparatus |
| CN102260903A (en) * | 2011-07-11 | 2011-11-30 | 浙江碧晶科技有限公司 | Method for growing thin silicon crystals |
| CN202717880U (en) * | 2012-08-03 | 2013-02-06 | 江苏中立新能源股份有限公司 | Novel polysilicon ingot casting furnace thermal field structure |
| CN203256368U (en) * | 2013-04-09 | 2013-10-30 | 嘉兴学院 | Pulling-method crystal growing apparatus capable of implementing continuous growth |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107217296A (en) * | 2017-04-28 | 2017-09-29 | 常州大学 | A kind of silicon wafer horizontal growth apparatus and method |
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| SE01 | Entry into force of request for substantive examination | ||
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| TA01 | Transfer of patent application right |
Effective date of registration: 20181011 Address after: 213000 No. 1, Hu Hu Road, Wujin District, Changzhou, Jiangsu Applicant after: CHANGZHOU University Applicant after: JIANGSU University Address before: 213164 Changzhou University, 1 Hu Hu Road, Wujin District, Changzhou, Jiangsu Applicant before: Changzhou University |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170322 |
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| RJ01 | Rejection of invention patent application after publication |