CN106501840B - Detector for measuring shape of longitudinal beam cluster of proton heavy ion beam - Google Patents
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Abstract
The invention relates to the technical field of accelerator beam diagnosis, beam measurement and longitudinal beam cluster shape measurement, in particular to a proton heavy ion beam longitudinal beam cluster shape measurement detector. Including detector main part and the microstrip line structure of setting above that, the detector main part include the flange, the tantalum copper composite sheet passes through the support frame and links to each other with the flange, still is provided with the water-cooled tube between flange and the tantalum copper composite sheet, the microstrip line structure set up at tantalum copper composite sheet inboard, the microstrip line structure is fixed on microstrip line bottom plate, is provided with the adapter from top to bottom respectively on the microstrip line structure, the microstrip line structure include the medium base plate, be provided with upper strata ground and lower floor ground from top to bottom respectively on the medium base plate, be provided with locating hole, first metallized via hole and second metallized via hole on the medium base plate, stripline conduction band and microstrip line conduction band setting are on the medium base plate. The device has the advantages of compact structure, easy processing, easy operation and control, high time resolution and strong anti-interference performance.
Description
Technical Field
The invention relates to the technical field of accelerator beam diagnosis, beam measurement and longitudinal beam cluster shape measurement, in particular to a detector for measuring the shape of a longitudinal beam cluster of a proton heavy ion beam.
Background
The beam diagnosis system is one of the important systems of the accelerator, monitors the transmission of the beam and determines the performance and parameters of the accelerator by measuring beam parameters through the beam diagnosis system, and is a necessary means for realizing the stable operation of the machine and the matching among all parts. Beam testing systems and application researches thereof are very important in accelerator laboratories at home and abroad. The shape of the longitudinal beam cluster is one of important parameters for measuring the beam quality, the longitudinal emittance of the beam can be calculated through measuring the length of the longitudinal beam cluster, the lattice of the beam can be verified, a verification means (the BPM cannot measure the length of the beam cluster when the energy is low) is provided for other methods (such as the BPM) for indirectly measuring the length of the beam cluster, and the assumed longitudinal Gaussian distribution of the beam can be verified through simulation calculation. Therefore, the accurate measurement of the shape of the longitudinal beam bunch can provide guidance for debugging and running of a machine, provide reliable basis for matching of all parts and provide verification basis for physical simulation calculation.
The search of the prior art documents shows that the united states Oak Ridge National Laboratory (ORNL) hash neutron source uses the sum signal of the BPM to measure the length of the longitudinal beam cluster which meets the gaussian distribution, but has the defect that the BPM cannot measure the length of the longitudinal beam cluster accurately at low energy; the german heavy ion institute (GSI) reports in 2013 that secondary electrons generated by the interaction of residual gas and beam current are accelerated by an external high-voltage electric field, and then the transverse and longitudinal directions of the secondary electrons are constrained by an electrostatic energy analyzer and a radio frequency deflection system to finally measure the beam cluster shape, but the structure of the device has the defects of complex structure, high manufacturing cost and the like; in a paper published in academic journal atomic energy science and technology 1996, 30 (4) and P368-371 of 20GHz digital sampling oscilloscope, the beam cluster length of a combined fertilizer 800MeV electronic storage ring with the flow strength of 2mA is successfully measured to be 300-800ps FWHM by an electrical measurement method based on a strip monitor.
Disclosure of Invention
The invention aims to provide a detector for measuring the shape of a longitudinal beam cluster of a proton heavy ion beam current, aiming at the defects of the prior art. Thereby effectively solving the problems in the prior art.
In order to achieve the purpose, the invention adopts the technical scheme that: the detector is characterized by comprising a detector main body and a microstrip line structure arranged on the detector main body, wherein the detector main body comprises a flange, a tantalum-copper composite plate is connected with the flange through a support frame, a water cooling pipe is further arranged between the flange and the tantalum-copper composite plate, the microstrip line structure is arranged on the inner side of the tantalum-copper composite plate and is fixed on a microstrip line base plate, adapters are respectively arranged on the upper part and the lower part of the microstrip line structure, the microstrip line structure comprises a dielectric substrate, the upper part and the lower part of the dielectric substrate are respectively provided with an upper layer ground and a lower layer ground, a positioning hole, a first metalized through hole and a second metalized through hole are formed in the dielectric substrate, and a strip line conduction band and a microstrip line conduction band are arranged on the dielectric substrate and signals are transmitted along the strip line conduction band and the microstrip line.
The flange is a double SMA switching ceramic high vacuum flange, the number of the water-cooling pipes is two, the two water-cooling pipes are correspondingly connected with the upper end and the lower end of the tantalum-copper composite plate respectively, and water flows in from the upper water-cooling pipe and flows out from the lower water-cooling pipe after heat exchange through the tantalum-copper composite plate; the adapter is a strip line structure induction signal leading-out head SMA adapter which is a stainless steel adapter with a flange seat, the cut-off frequency is 18GHz, and the strip line structure induction signal leading-out head SMA adapter is in contact connection with a microstrip line conduction band in a compression joint mode to realize the switching of induction microwave signals from a strip line structure to a coaxial semi-steel cable; the double SMA switching ceramic high vacuum flange realizes effective leading-out of microwave signals induced by beam current and a microwave strip line structure from the inside of a vacuum pipeline to the outside of the vacuum pipeline, and simultaneously realizes exchange of an input and output water path of a water cooling pipe, and the strip line structure induction signal leading-out head SMA adapter is connected with a subsequent radio frequency cable, a broadband radio frequency amplifier and an oscilloscope.
The tantalum-copper composite board is arranged on the front surface of the microwave strip line structure, the microwave strip line bottom board is arranged on the back surface of the microwave strip line structure, the tantalum-copper composite board is fixedly connected with the microwave strip line structure through the positioning hole, and the central small hole of the microwave strip line on the microwave strip line structure and the central hole of the tantalum-copper composite board are concentrically arranged.
The material of the microstrip line bottom plate is copper, the dielectric substrate is high-temperature AIN ceramic, the dielectric constant of the AIN ceramic is between 8.5 and 8.9, the effective area of the dielectric substrate is 30-30mm-50-50mm, and the height of the dielectric substrate is 0.5-2.5mm; the central small hole of the microstrip line is arranged at the central position of the dielectric substrate, the diameter of the central small hole of the microstrip line is 0.8-2.2mm, the depth of the central small hole is half of the height of the dielectric substrate, and the interaction between beam current and a strip line conduction band is realized.
The strip line conduction band broadband of the microwave strip line structure is made of tungsten plated with nickel and gold, the width is 0.2-0.6mm, the thickness is 0.018-0.036mm, the microstrip line conduction band is made of tungsten plated with nickel and gold, the width is 0.8-2.4mm, the thickness is 0.018-0.036mm, the upper layer ground and the lower layer ground are made of tungsten plated with nickel and gold, and the thicknesses are 0.018-0.054mm respectively.
The second metalized through holes of the microwave strip line structure are arranged to be parallel to the microstrip line conduction band and distributed on two sides of the microstrip line conduction band, the distance between two rows of the second metalized through holes is 10-16mm, the hole diameter is 0.2-0.6mm, the hole distance in each row of the metalized through holes is 1-3mm, the second metalized through holes are connected with an upper layer ground and a lower layer ground, a high-order mode is inhibited, and a microwave parallel plate transmission mode formed by the upper layer ground and the lower layer ground is favorable for a strip line TEM transmission mode; the microstrip line conduction band is arranged in the middle of two ends of the dielectric substrate, the microstrip line conduction band is arranged at the center of the dielectric substrate corresponding to the central small hole of the microstrip line, the first metalized via hole is arranged around the microstrip line conduction band and connected with the upper layer ground and the lower layer ground, and the positioning hole is fixed on the microstrip line base plate through a screw.
The tantalum-copper composite plate of the detector main body is welded by adopting an electron beam, a central hole of the tantalum-copper composite plate is provided with two diameter holes with different sizes, the diameter of the central hole on the contact side of the tantalum-copper composite plate and a strip line microwave transmission structure is 1.4mm, the diameter of the outer side of the central hole is 2.5mm, the purpose is to prevent excessive beam current and the microwave strip line structure from generating a large amount of heat to influence the characteristic impedance of the microwave strip line structure, and the heat resistance of the detector main body part and the beam current action is improved.
The invention has the beneficial effects that: the proton heavy ion beam longitudinal beam cluster shape measurement detector induces a microwave signal through the interaction of a beam and a strip line structure of an interception type longitudinal beam cluster shape measurement detector, the signal is led out through a radio frequency cable and is processed through radio frequency electronics, and the longitudinal shape distribution information of the beam is finally obtained, so that the proton heavy ion beam longitudinal beam cluster shape measurement detector is not limited by low energy, can accurately measure the proton heavy ion beam longitudinal beam cluster shape, and has the advantages of compact structure, easiness in processing, easiness in operation and control, simplicity in a subsequent data acquisition system and the like, the cost is effectively reduced, the strip line structure is adopted, the bandwidth of the detector is effectively increased, the time resolution of a probe is improved, and the anti-interference capability of the detector is improved; the tantalum-copper composite plate structure and the water cooling structure are adopted, so that the heat resistance of the probe is effectively improved, and the beam with higher power can be measured; the medium substrate is made of high-temperature AIN ceramic, and has good irradiation resistance and good processability; the ceramic has the advantages of good thermal conductivity, good mechanical property, high flexural strength and small AIN ceramic dielectric loss, namely small insertion loss during microwave signal transmission.
Description of the drawings:
FIG. 1 is a schematic structural view of a main body part of the present invention;
FIG. 2 is a schematic front view of the microstrip line structure of FIG. 1 in accordance with the present invention;
FIG. 3 is a schematic top view of the structure of FIG. 2 of the present invention;
FIG. 4 is a block diagram of an on-line beam current testing system of the present invention;
FIG. 5 is an overall design roadmap for the present invention;
FIG. 6 is a process map of the transmission coefficient S21 of the microstrip line structure of the present invention;
FIG. 7 is a processed, empirical view of the transmission coefficient S11 of the microstrip line structure of the present invention;
FIG. 8 is a graph of the simulation results of the longitudinal beam cluster length at a beam energy of 2.1MeV and a frequency of 162.5MHz in accordance with the present invention;
FIG. 9 is a graph of the measured beam length at 162.5MHz for a continuous beam stream of 2.1MeV energy according to the present invention.
Shown in the figure: 1. a probe body; 1-1. Central hole; 1-2, tantalum-copper composite board; 1-3. Water cooling tube; 1-4. An adapter; 1-5, flange; 1-6. A support frame; 1-7, microwave strip line baseboard; 2. a microstrip line structure; 2-1. A dielectric substrate; 2-2, conducting a strip line; 2-3, microstrip line conduction band; 2-4. A first metallized via; 2-5. A second metallized via; 2-6, upper floor; 2-7, lower floor; 2-8, positioning holes; 2-9. A central hole of the microstrip line.
Detailed Description
The following detailed description is to be read with reference to the best mode embodiment shown in the accompanying drawings:
as shown in fig. 1 to 5, the proton heavy ion beam longitudinal beam cluster shape measurement detector is characterized by comprising a detector main body 1 and a microstrip line structure 2 arranged on the detector main body, wherein the detector main body 1 comprises a flange 1-5, a tantalum copper composite plate 1-2 is connected with the flange 1-5 through a support frame 1-6, a water cooling pipe 1-3 is further arranged between the flange 1-5 and the tantalum copper composite plate 1-2, the microstrip line structure 2 is arranged on the inner side of the tantalum copper composite plate 1-2, the microstrip line structure 2 is fixed on a microstrip line base plate 1-7, adapters 1-4 are respectively arranged on the upper and lower sides of the microstrip line structure 2, the microstrip line structure 2 comprises a dielectric substrate 2-1, an upper layer 2-6 and a lower layer 2-7 are respectively arranged on the upper and lower sides of the dielectric substrate 2-1, a positioning hole 2-8, a first metalized via hole 2-4 and a second metalized via hole 2-5 are respectively arranged on the dielectric substrate 2-1, the strip line 2-1 and the microstrip line 2-3 are arranged on the dielectric substrate 2-1, and signals are transmitted along the microstrip line 2-3.
The flange 1-5 is a double SMA (shape memory alloy) adapter ceramic high vacuum flange, the number of the water-cooling pipes 1-3 is two, the two water-cooling pipes are respectively and correspondingly connected with the upper end and the lower end of the tantalum-copper composite plate 1-2, water flows in from the upper water-cooling pipe, and flows out from the lower water-cooling pipe after heat exchange through the tantalum-copper composite plate 1-2; the adapters 1-4 are stripline structure induction signal leading-out head SMA adapters, the stripline structure induction signal leading-out head SMA adapters are stainless steel adapters with flange seats, the cut-off frequency is 18GHz, and the stripline structure induction signal leading-out head SMA adapters are in contact connection with microstrip line conduction bands 2-3 in a compression joint mode to realize the switching of induction microwave signals from a stripline structure to a coaxial semi-steel cable; the dual SMA adapter ceramic high vacuum flange realizes effective extraction of microwave signals induced by beam and microwave strip line structure from the inside of the vacuum pipeline to the outside of the vacuum pipeline, and simultaneously realizes exchange of input and output water paths of the water cooling pipe, and the SMA adapter of the strip line structure induction signal extraction head is connected with a subsequent radio frequency cable, a broadband radio frequency amplifier and an oscilloscope.
The tantalum copper composite board 1-2 is arranged on the front side of the microstrip line structure 2, the microstrip line bottom board 1-7 is arranged on the back side of the microstrip line structure 2, the tantalum copper composite board 1-2 is fixedly connected with the microstrip line structure 2 through the positioning hole 2-8, and the microstrip line central small hole 2-9 on the microstrip line structure 2 and the central hole 1-1 of the tantalum copper composite board 1-2 are arranged concentrically.
The microwave strip line base plate 1-7 is made of copper, the dielectric substrate 2-1 is made of high-temperature AIN ceramic, the dielectric constant of the AIN ceramic is between 8.5 and 8.9, the effective area of the dielectric substrate 2-1 is 30-30mm-50-50mm, and the height is 0.5-2.5mm; the central small hole 2-9 of the microstrip line is arranged at the central position of the dielectric substrate 2-1, the diameter of the central small hole 2-9 of the microstrip line is 0.8-2.2mm, and the depth is half of the height of the dielectric substrate 2-1, so that the interaction between the beam current and the strip line conduction band is realized.
The strip line conduction band 2-2 broadband of the microwave strip line structure 2 is tungsten plated with nickel and gold, the width is 0.2-0.6mm, the thickness is 0.018-0.036mm, the microstrip line conduction band 2-3 is tungsten plated with nickel and gold, the width is 0.8-2.4mm, the thickness is 0.018-0.036mm, the upper layer ground 2-6 and the lower layer ground 2-7 are tungsten plated with nickel and gold, and the thicknesses are 0.018-0.054mm respectively.
The second metalized through holes 2-5 of the microwave strip line structure 2 are arranged to be parallel to the microstrip line conduction band 2-3 and distributed on two sides of the microstrip line conduction band 2-3, the distance between two rows of the second metalized through holes is 10-16mm, the hole diameter is 0.2-0.6mm, the hole distance in each row of the metalized through holes is 1-3mm, and the second metalized through holes 2-5 are connected with the upper layer ground 2-6 and the lower layer ground 2-7, so that a high-order mode is inhibited, and a microwave parallel plate transmission mode formed by the upper layer ground and the lower layer ground is favorable for a strip line TEM transmission mode; the microstrip line conduction band 2-3 is arranged in the middle of two ends of the dielectric substrate 2-1, the microstrip line conduction band 2-2 is arranged at the center of the dielectric substrate 2-1 corresponding to the microstrip line center small hole 2-9, the first metalized through hole 2-4 is arranged around the microstrip line conduction band 2-3, the first metalized through hole 2-4 is connected with the upper layer ground 2-6 and the lower layer ground 2-7, and the positioning hole 2-8 is fixed on the microstrip line bottom plate 1-7 through a screw.
The detector comprises a detector body 1, a tantalum copper composite plate 1-2 and a strip line microwave transmission structure, wherein the tantalum copper composite plate 1-2 of the detector body 1 is welded by adopting an electron beam, a central hole 1-1 of the tantalum copper composite plate 1-2 is provided with two diameter holes with different sizes, the diameter of the central hole on the side contacting with the strip line microwave transmission structure is 1.4mm, the diameter of the outer side of the strip line microwave transmission structure is 2.5mm, the purpose is to prevent excessive beam current and the microwave strip line structure from generating a large amount of heat to influence the characteristic impedance of the microwave strip line structure, and the heat resistance of the detector body part and the action of the beam current is improved.
The proton heavy ion beam longitudinal beam cluster shape measuring detector is characterized in that a beam vertically passes through a central hole 1-1 of a tantalum-copper composite plate 1-2 to interact with a strip line conduction band 2-2 of a microwave strip line structure 2, a microwave signal is induced to be led out from one end of a strip line microwave transmission structure, the other end of the strip line microwave transmission structure is connected with a 50-ohm matched load, the signal passes through a low-loss coaxial radio frequency cable and a broadband low-noise radio frequency amplifier and is finally input to a broadband high-sampling-rate digital oscilloscope to display the waveform of voltage changing along with time, and therefore the length of a longitudinal beam cluster is measured visually and accurately. Fig. 3 is a block diagram of an on-line beam current testing system of a longitudinal beam shape measuring detector. A central hole 1-1 of a detector main body 1 of the microwave probe senses microwave signals by selecting a part of vertical incident beam current and interacting with a microwave strip line structure. The melting point of the tantalum-copper composite plate 1-2 of the detector main body 1 is 2900 ℃, and the heat resistance of the detector main body and the action of beam current is improved. The water-cooling tube of the detector main body 1 mainly aims to improve the heat resistance of the detector main body under the action of beam current, so that the maximum heat bearing power of the detector under the action of the beam current is improved. A strip line conduction band of a microwave strip line structure 2 of a detector main body 1 interacts with beam current, and a microwave signal is induced to pass through a strip line microwave transmission structure SMA adapter 1-4 and is finally led out by a semi-rigid cable connected with the same. The double SMA adapter ceramic high vacuum flanges 1-5 of the detector main body 1 mainly have the main functions of ensuring the vacuum tightness of the detector and simultaneously enabling microwave induction signals to be switched from the vacuum inner side of the vacuum flange to the side, connected with the corrugated pipe, of the vacuum flange. The support frames 1-6 of the detector main body 1 mainly function in supporting the tantalum-copper composite plate and the microstrip line structure. The stripline backplanes 1-7 of the detector body 1 are primarily used for securing the stripline structure and SMA adapters 1-4 and are good as microstrip structures. The characteristic impedance of the microstrip line structure 2 is determined by the geometrical size of the strip line, and the relation between the geometrical size and the characteristic impedance satisfies the following conditions:
in the formula:
reasonable conduction band width w and thickness t are selected, and substrate thickness b and substrate dielectric constant epsilon r Finally, the characteristic impedance of the strip line can be determined to be 50 ohms.
Further preferably, the dielectric substrate 2-1 of the microstrip line structure 2 is made of high-temperature AIN ceramic, the dielectric constant of the AIN ceramic is between 8.5 and 8.9, the effective area of the dielectric substrate is 40 × 40mm, and the height is 2mm. AIN thermal conductivity reaches 260W/(m.k), is 5-8 times higher than that of alumina, has good thermal shock resistance, can resist extreme heat of 2200 ℃, and has better radiation resistance and good processability; good mechanical property and higher breaking strength than Al 2 O 3 And BeO ceramics; the AIN ceramic has small dielectric loss, namely the insertion loss is small when microwave signals are transmitted. The strip line conduction band 2-2 is made of tungsten nickel gold, the width is 0.4mm, the thickness is 0.018mm, and the strip line conduction band has good heat resistance and conductivity. The microstrip line conduction band 2-3 is tungsten plated with nickel and gold, the broadband is 1.1mm, and the thickness is 0.018mm. Has good heat resistance and conductivity. The first metalized via hole 2-4 aims to improve the reflection caused when a microwave signal passes through a strip line to a microstrip line, and the second metalized via hole 2-5 aims to inhibit a higher-order mode, namely a microwave parallel plate transmission mode formed by an upper layer and a lower layer, and is more favorable for a strip line TEM transmission mode. The positioning holes 2-8 are beneficial to firmly fixing the strip line structure on the microwave strip line base plate 1-7. The diameter of the central small hole 2-9 of the microstrip line is 1.6mm, the depth is 1mm, and the microwave signal induction by the direct interaction of the beam and the strip line conduction band 2-2 is facilitated.
Fig. 6 is a processed and measured graph of transmission coefficient S21 of the microstrip line structure of the detector of the present invention, and fig. 7 is a processed and measured graph of reflection coefficient S11 of the microstrip line structure of the detector of the present invention, and it can be clearly seen from fig. 6 and 7 that the bandwidth of the detector for measuring the shape of the longitudinal beam packet of the proton heavy ion beam can reach 6GHz. Fig. 8 is a graph of the simulation result of the longitudinal beam cluster length at a beam energy of 2.1MeV and a frequency of 162.5MHz, where the longitudinal beam cluster length is 120 degrees, i.e., 2ns. Fig. 9 is a diagram of the actually measured result of the longitudinal beam bunch shape measuring detector in the beam, the actually measured result is 2ns, and the result is completely consistent with the result of 2ns of the simulation of the length of the longitudinal beam bunch.
Compared with a method for measuring the length of a longitudinal beam group meeting Gaussian distribution by using a BPM (binary noise network) sum signal by using an ORNL (national laboratory of Oak Rings) hash neutron source and a method for measuring the length of the beam group by using a 20GHz digital sampling oscilloscope, such as a national synchrotron radiation laboratory of the university of Chinese science and technology, the method is not limited by low energy, and can more accurately measure the shape of the longitudinal beam group of the proton heavy ion beam. Compared with the method that secondary electrons generated by the interaction of residual gas and beam current are accelerated by an external high-voltage electric field and then the transverse and longitudinal directions of the secondary electrons are restrained by an electrostatic energy analyzer and a radio frequency deflection system to finally measure the beam cluster shape of the secondary electrons, the method has the advantages of compact structure, easiness in processing, easiness in operation and control, simplicity in a subsequent data acquisition system and the like, so that the cost is effectively reduced.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (5)
1. A proton heavy ion beam longitudinal beam cluster shape measurement detector is characterized by comprising a detector main body and a microstrip line structure arranged on the detector main body, wherein the detector main body comprises a flange, a tantalum-copper composite plate is connected with the flange through a support frame, a water cooling pipe is arranged between the flange and the tantalum-copper composite plate, the microstrip line structure is arranged on the inner side of the tantalum-copper composite plate and is fixed on a microstrip line base plate, adapters are respectively arranged on the upper part and the lower part of the microstrip line structure, the microstrip line structure comprises a dielectric substrate, the upper part and the lower part of the dielectric substrate are respectively provided with an upper layer ground and a lower layer ground, a positioning hole, a first metalized through hole and a second metalized through hole are arranged on the dielectric substrate, and a strip line conduction band and a microstrip line conduction band are arranged on the dielectric substrate; the flange is a double SMA switching ceramic high vacuum flange, the number of the water-cooling pipes is two, the two water-cooling pipes are correspondingly connected with the upper end and the lower end of the tantalum-copper composite plate respectively, and water flows in from the upper water-cooling pipe and flows out from the lower water-cooling pipe after heat exchange through the tantalum-copper composite plate; the adapter is a strip line structure induction signal leading-out head SMA adapter which is a stainless steel adapter with a flange seat, the cut-off frequency is 18GHz, and the strip line structure induction signal leading-out head SMA adapter is in contact connection with a microstrip line conduction band in a compression joint mode to realize the switching of induction microwave signals from a strip line structure to a coaxial semi-steel cable; the double SMA switching ceramic high vacuum flange realizes effective leading-out of beam current and microwave signals induced by a microwave strip line structure from the inside of a vacuum pipeline to the outside of the vacuum pipeline, and simultaneously realizes exchange of an input and output water path of a water cooling pipe; the tantalum-copper composite plate is arranged on the front side of the microstrip line structure, the microstrip line bottom plate is arranged on the back side of the microstrip line structure, the tantalum-copper composite plate is fixedly connected with the microstrip line structure through a positioning hole, and a small central hole of the microstrip line on the microstrip line structure and a central hole of the tantalum-copper composite plate are concentrically arranged; the microstrip line conduction band is arranged in the middle of two ends of the dielectric substrate and corresponds to the microstrip line central hole.
2. The detector of claim 1, wherein: the microwave strip line baseboard is made of copper, the dielectric substrate is made of high-temperature AIN ceramic, the dielectric constant of the AIN ceramic is between 8.5 and 8.9, the effective area of the dielectric substrate is 30-30mm-50-50mm, and the height of the dielectric substrate is 0.5-2.5mm; the diameter of the small hole at the center of the microwave strip line is 0.8-2.2mm, and the depth is half of the height of the medium substrate, so that the interaction between the beam current and the strip line conduction band is realized.
3. The detector of claim 1, wherein: the strip line conduction band broadband of the microwave strip line structure is made of tungsten plated with nickel and gold, the width is 0.2-0.6mm, the thickness is 0.018-0.036mm, the microstrip line conduction band is made of tungsten plated with nickel and gold, the width is 0.8-2.4mm, the thickness is 0.018-0.036mm, the upper layer ground and the lower layer ground are made of tungsten plated with nickel and gold, and the thicknesses are 0.018-0.054mm respectively.
4. The detector of claim 1, wherein: the second metalized via holes of the microstrip line structure are arranged to be parallel to the microstrip line conduction band and distributed on two sides of the microstrip line conduction band, the distance between two rows of the second metalized via holes is 10-16mm, the hole diameter is 0.2-0.6mm, the hole distance in each row of the second metalized via holes is 1-3mm, and the second metalized via holes are connected with the upper layer ground and the lower layer ground; the first metalized via hole is arranged around the microstrip line conduction band, the first metalized via hole is connected with the upper layer ground and the lower layer ground, and the positioning hole is fixed on the microstrip line base plate through a screw.
5. The detector of claim 1, wherein: the detector main body is characterized in that the tantalum-copper composite plate is welded by adopting an electron beam, a central hole of the tantalum-copper composite plate is provided with two diameter holes with different sizes, the diameter of the central hole on the contact side of the tantalum-copper composite plate and the strip line microwave transmission structure is 1.4mm, and the diameter of the outer side of the central hole is 2.5mm.
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| CN111208550B (en) * | 2020-01-08 | 2021-08-17 | 中国科学院近代物理研究所 | Transverse and longitudinal beam schottky signal detector |
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| JP2005260008A (en) * | 2004-03-11 | 2005-09-22 | Japan Science & Technology Agency | Radiation detector and its manufacturing method |
| CN101470208A (en) * | 2007-12-28 | 2009-07-01 | 中国航天科技集团公司第五研究院第五一〇研究所 | Measuring system for nA/pA electronic beam current of impulse electron accelerator |
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