CN106498487A - 熔区附加磁场装置及具有其的vgf单晶生长炉 - Google Patents
熔区附加磁场装置及具有其的vgf单晶生长炉 Download PDFInfo
- Publication number
- CN106498487A CN106498487A CN201611027330.5A CN201611027330A CN106498487A CN 106498487 A CN106498487 A CN 106498487A CN 201611027330 A CN201611027330 A CN 201611027330A CN 106498487 A CN106498487 A CN 106498487A
- Authority
- CN
- China
- Prior art keywords
- field device
- magnetic
- magnet
- single crystal
- conductive board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002844 melting Methods 0.000 title claims abstract description 15
- 230000008018 melting Effects 0.000 title claims abstract description 15
- 230000000295 complement effect Effects 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 52
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 230000006698 induction Effects 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 150000002910 rare earth metals Chemical class 0.000 claims description 4
- 239000007787 solid Substances 0.000 abstract description 5
- 239000000155 melt Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 10
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611027330.5A CN106498487A (zh) | 2016-11-17 | 2016-11-17 | 熔区附加磁场装置及具有其的vgf单晶生长炉 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611027330.5A CN106498487A (zh) | 2016-11-17 | 2016-11-17 | 熔区附加磁场装置及具有其的vgf单晶生长炉 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106498487A true CN106498487A (zh) | 2017-03-15 |
Family
ID=58327353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611027330.5A Pending CN106498487A (zh) | 2016-11-17 | 2016-11-17 | 熔区附加磁场装置及具有其的vgf单晶生长炉 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106498487A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117822126A (zh) * | 2024-03-02 | 2024-04-05 | 山东华特磁电科技股份有限公司 | 一种磁拉晶永磁装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH107487A (ja) * | 1996-06-20 | 1998-01-13 | Komatsu Electron Metals Co Ltd | 磁場印加による半導体単結晶の製造方法 |
CN201106071Y (zh) * | 2007-09-20 | 2008-08-27 | 西安理工大学 | 单晶炉勾形电磁场装置 |
CN201485534U (zh) * | 2009-08-11 | 2010-05-26 | 嘉兴市中科光电科技有限公司 | 一种太阳能单晶硅制备用的磁场装置 |
CN105696085A (zh) * | 2014-11-24 | 2016-06-22 | 银川隆基硅材料有限公司 | 磁场装置及具有该磁场装置的单晶生长设备 |
-
2016
- 2016-11-17 CN CN201611027330.5A patent/CN106498487A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH107487A (ja) * | 1996-06-20 | 1998-01-13 | Komatsu Electron Metals Co Ltd | 磁場印加による半導体単結晶の製造方法 |
CN201106071Y (zh) * | 2007-09-20 | 2008-08-27 | 西安理工大学 | 单晶炉勾形电磁场装置 |
CN201485534U (zh) * | 2009-08-11 | 2010-05-26 | 嘉兴市中科光电科技有限公司 | 一种太阳能单晶硅制备用的磁场装置 |
CN105696085A (zh) * | 2014-11-24 | 2016-06-22 | 银川隆基硅材料有限公司 | 磁场装置及具有该磁场装置的单晶生长设备 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117822126A (zh) * | 2024-03-02 | 2024-04-05 | 山东华特磁电科技股份有限公司 | 一种磁拉晶永磁装置 |
CN117822126B (zh) * | 2024-03-02 | 2024-06-04 | 山东华特磁电科技股份有限公司 | 一种磁拉晶永磁装置 |
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Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170410 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant after: ZHUHAI DINGTAI XINYUAN CRYSTAL CO.,LTD. Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant before: BEIJING DINGTAI XINYUAN TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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CB03 | Change of inventor or designer information |
Inventor after: Zhao Youwen Inventor after: Duan Manlong Inventor before: Yang Cuibai Inventor before: Zhao Youwen Inventor before: Fang Cong Inventor before: Wang Fenghua Inventor before: Dong Zhiyuan Inventor before: Gao Yongliang Inventor before: Wang Jun |
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CB03 | Change of inventor or designer information | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170808 Address after: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant after: BEIJING DINGTAI XINYUAN TECHNOLOGY DEVELOPMENT Co.,Ltd. Address before: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant before: ZHUHAI DINGTAI XINYUAN CRYSTAL CO.,LTD. |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170823 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant after: ZHUHAI DINGTAI XINYUAN CRYSTAL CO.,LTD. Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant before: BEIJING DINGTAI XINYUAN TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20170315 |