CN106486564A - A kind of silicon nanowires photodetector based on two-photon absorption - Google Patents
A kind of silicon nanowires photodetector based on two-photon absorption Download PDFInfo
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- CN106486564A CN106486564A CN201510548075.8A CN201510548075A CN106486564A CN 106486564 A CN106486564 A CN 106486564A CN 201510548075 A CN201510548075 A CN 201510548075A CN 106486564 A CN106486564 A CN 106486564A
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- 239000010703 silicon Substances 0.000 title claims abstract description 137
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 136
- 239000002070 nanowire Substances 0.000 title claims abstract description 105
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 75
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000005286 illumination Methods 0.000 claims abstract description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 14
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 238000004891 communication Methods 0.000 claims abstract description 13
- 238000005728 strengthening Methods 0.000 claims abstract description 6
- 241000237509 Patinopecten sp. Species 0.000 claims description 13
- 235000020637 scallop Nutrition 0.000 claims description 13
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- 239000002184 metal Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 description 7
- 230000004043 responsiveness Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000011258 core-shell material Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 230000004044 response Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000013461 design Methods 0.000 description 2
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- 229910004221 SiNW Inorganic materials 0.000 description 1
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- 230000000295 complement effect Effects 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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Abstract
The present invention provides a kind of silicon nanowires photodetector based on two-photon absorption, including：First silicon layer；Silicon dioxide layer；Second silicon layer, etched after be formed as concentric-circle grating shape；Silicon nanowires, is formed by the second silicon layer is etched, afterwards for receiving incident illumination；Plasma antenna pair, for strengthening the light intensity of the incident illumination in the nano gap entering silicon nanowires.Because communication band photon energy is less than the energy level energy gap of semiconductor silicon, therefore extremely low and unrelated with light intensity in the single photon absorption coefficient of communication band silicon.The coefficient that silicon absorbs two-photon is similarly very low, but two-photon absorption coefficient is directly proportional to light intensity, increases light intensity and can linearly improve two-photon absorption.Above-mentioned plasma antenna can dramatically incident illumination be limited in the nano gap at silicon nanowires place, thus strengthening at least 5 orders of magnitude of light intensity, which significantly enhances two-photon absorption in the total absorption coefficient of silicon, electron hole pair can be produced in large quantities in silicon nanowires and photoelectric current occurs.
Description
Technical field
The present invention relates to a kind of silicon nanowires photodetector based on two-photon absorption, more particularly, to ultra high-speed optical data lead to
The silicon nanowires photodetector based on two-photon absorption of letter.
Background technology
Because silicon CMOS (complementary metal oxide semiconductors (CMOS)) technology has developed highly developed, therefore by total silicon Integrated Light
Electric explorer is come to change optical communication data to the signal of telecommunication be attractive.But, because silicon has very big indirect band gap energy
Amount (1.12eV), does not therefore enable the linear Single Photon Absorption of the photon in communication wavelengths 1310nm or 1550nm.
Document 1 discloses, and the integrated silicon-based structure with photon crystal micro cavity can absorb luminous energy by multiphoton absorption process, is inhaled
The wave-length coverage of the light received is between 1200nm～2400nm.
At present, silicon nanowires has become as research photodetection and the novel semiconductor material amplifying.Because silicon nanowires has relatively
Big specific surface area, therefore can reduce junction capacity density.This extremely low electric capacity allows the ultrahigh speed of photodetector and low work(
Consumption operation.And, disclose in document 2, using the fully integrated photodetector of nano wire allow with technical compatibility on piece
Advanced function is had on size.
But, the size incompatibility between optical micrometer and nanowire photodiode detector leads to the conversion from photon to electronics
Responsiveness is low.This is that the diffraction of light limit causes.Document 3 proposes the idea of half-wave dipole Hertz antenna, to limit sub- ripple
Powerful optical near-field in long amount.They have been proven that and can excite to strengthen in Ge nanoline by surface plasma
Carrier wave photoproduction.
New silicon nanowire structure photodetector has become as international study hotspot at present.
【Patent documentation 1】American documentation literature US8515216
【Patent documentation 2】《Natural optics》3 (10) 569-576 (2009), " silicon nanowires photon ", Ruoxue Yan,
Daniel Gargas,Peidong Yang
【Patent documentation 3】《Natural optics》2,226-229 (2008), " near-infrared dipole antenna enhanced nanoscale germanium light electrical resistivity survey
Survey device, " L.Tang, S.E.Kocabas, S.Latif, A.K.Okyay, D.Ly-Gagnon, K.C.Saraswat, and D.A.B.Miller,
Content of the invention
It is an object of the invention to provide the silicon nanowires photodetector based on two-photon absorption that a kind of responsiveness significantly increases,
It is applicable to ultra high-speed optical communication.
To achieve these goals, the structure of the silicon nanowires photodetector based on two-photon absorption of the present invention is as follows.
A kind of silicon nanowires photodetector based on two-photon absorption, including：The first silicon layer as substrate；Positioned at the first silicon
The silicon dioxide layer of the upper surface of layer；Second silicon layer, positioned at the upper surface of described silicon dioxide layer, etched after be formed as concentric
Circular gratings shape；Silicon nanowires, positioned at the upper surface of described silicon dioxide layer, is formed afterwards by described second silicon layer is etched, is used for
Receive incident illumination；Plasma antenna pair, positioned at described silicon dioxide layer upper surface and etched after be in concentric-circle grating shape
Described second silicon layer upper surface, for strengthening the light intensity entering the incident illumination in the nano gap that described silicon nanowires is located.
Wherein, described plasma antenna is to also including：A pair of fan spike antenna, has：In concentric-circle grating shape, bottom be half
The scallop of circle；The bar parallel to described silicon nanowires projecting from the center of the bottom semicircular of described scallop, and described one
Fan spike antenna is located at the centrage perpendicular to described silicon nanowires for axis of symmetry with the both sides of described silicon nanowires.
A pair of tapered dipole antennas, described tapered dipole antennas perpendicular to described silicon nanowires, with described silicon nanowires as axis of symmetry
Positioned at the both sides of described silicon nanowire, the pair of fan spike antenna is simultaneously as the electrode of described silicon nanowires, described for collecting
The photo-generated carrier generating in silicon nanowires is thus form photoelectric current.
Preferably, described plasma antenna at least strengthens 5 orders of magnitude to the light intensity making described incident illumination.
Preferably, described plasma antenna is to being designed in the communication band near 1310nm and the communication near 1550nm
Resonance on wave band.
Preferably, described plasma antenna is constituted to by metal, and described metal is golden or silver-colored.
Preferably, the described bar of described fan spike antenna is rectangular shaft.
Preferably, the angle of described scallop is 60 degree～120 degree.
Preferably, described tapered dipole antennas include bar portion and the tapered portion of the one end near described silicon nanowires, described bar portion
For rectangle.
Preferably, described silicon nanowire is nucleocapsid structure, including p-type core and N-shaped shell portion, or N-shaped core and p-type shell
Portion.
Preferably, described nano thread structure is double-decker, including N-shaped bottom and p-type top layer, or p-type bottom and N-shaped
Top layer.
Preferably, the doping content scope of p-type is 1 × 1017cm-3～1 × 1019cm-3, the doping content scope of N-shaped is
1×1017cm-3～1 × 1019cm-3.
A pair of plasma antenna is included based on the silicon nanowires photodetector of two-photon absorption according to the present invention, this equity from
Daughter antenna can dramatically incident illumination be limited in the nano gap at silicon nanowires place, thus strengthening light intensity at least 5
The individual order of magnitude, which significantly enhances two-photon absorption in the total absorption coefficient of silicon, can produce electricity therefore in silicon nanowires in large quantities
Son-hole to and photoelectric current occurs.
In addition, in order to increase photoelectric current further and reduce dark current, the silicon nanowires of the photodetector of the present invention also include core-
Shell structure and double-decker.The responsiveness of photodetector can at least be strengthened 4 orders of magnitude by this structure.
Further, the extremely low junction capacity of the photodetector of the present invention for ultrahigh speed performance can realize low power operation and
Cut-off frequency more than 1THz.
Brief description
Fig. 1 is that the absorptance of silicon in the photodetector based on two-photon absorption show the present invention acts as in 1310nm wave band
Schematic diagram.
Fig. 2 is the structural representation of the photodetector based on two-photon absorption showing the present invention, and wherein, Fig. 2 (a) is light
The top view of electric explorer, Fig. 2 (b) is the partial enlarged drawing of silicon nanowires part in Fig. 2 (a), and Fig. 2 (c) is light electrical resistivity survey
Survey the cross-sectional view of device.
Fig. 3 be show the photodetector light intensity based on two-photon absorption of the present invention strengthen after silicon nanowires absorption cross-section
Figure.
Fig. 4 (a) is the electric field intensity square within the nano gap based on the photodetector of two-photon absorption showing the present invention
Distribution schematic diagram, Fig. 4 (b) is the plane graph of the silicon nanowire part of the photodetector showing the present invention.
Fig. 5 (a) is the axonometric chart of the nucleocapsid structure of the silicon nanowires of the photodetector based on two-photon absorption showing the present invention,
Fig. 5 (b) is to show another kind of double-deck axonometric chart.
Fig. 6 is nucleocapsid structure silicon nanowires knot length and the raceway groove electricity of the photodetector based on two-photon absorption showing the present invention
The graph of a relation of stream.
Fig. 7 is the p-type background doped of the nucleocapsid structure silicon nanowires of the photodetector based on two-photon absorption showing the present invention
Concentration and the graph of a relation of channel current.
Fig. 8 is the comparison with axial photodiode for the nucleocapsid structure of the photodetector based on two-photon absorption showing the present invention
Figure.
Fig. 9 be the photodetector based on two-photon absorption showing the present invention the photoelectric current of nucleocapsid structure silicon nanowires and secretly electricity
Stream and the graph of a relation of surface of silicon nanowires recombination velocity.
Figure 10 is the schematic diagram of the frequency response of the photodetector based on two-photon absorption showing the present invention.
Symbol description
1 first silicon layer
2 silicon dioxide layers
3 second silicon layers
4 silicon nanowires
5 plasma antennas pair
51 a pair of fan spike antenna
52 scallop
521 concentric-circle grating portions
The half-round of 522 fan-shaped bottoms
53 bars
54 a pair of tapered dipole antennas
541 bar portions
542 tapered portion
Specific embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail.Following examples are not limitation of the present invention.Without departing substantially from send out
Under the spirit and scope of bright design, those skilled in the art it is conceivable that change and advantage be all included in the present invention.
Fig. 1 is that the total absorption coefficient of silicon in the photodetector based on two-photon absorption show the present invention rises in 1310nm wave band
The schematic diagram of effect.In figure transverse axis represents lambda1-wavelength, and the longitudinal axis represents the total absorption coefficient of silicon.In figure 5 different line generation
Total absorption coefficient under different light intensity for the table, it is 10 that such as the 1st article solid line represents light intensity0wcm-2.This total absorption coefficient includes list
Photonic absorption and two-photon absorption (TPA).Two-photon absorption is relevant with light intensity.Single Photon Absorption is relevant with wavelength, and with light
Unrelated by force.As illustrated, when wavelength is very long, such as near the right side of Fig. 1, Single Photon Absorption very little, total absorption coefficient master
Two-photon absorption to be derived from, therefore total absorption coefficient linearly increase with light intensity.Non-linear total absorption coefficient can use equation below table
Show：α (l)=α0+ β × l, wherein, α0It is linear absorption coefficient (Single Photon Absorption), β is two-photon coefficient, l is to focus on
Light intensity afterwards.It can be seen that, the wave band near 1310nm, mainly two-photon absorption are in action.In addition, according to experiment,
Wave band near 1550nm is also mainly two-photon absorption in action.
Fig. 2 is the structural representation of the photodetector based on two-photon absorption showing the present invention, and wherein, Fig. 2 (a) is light
The top view of electric explorer, Fig. 2 (b) is the partial enlarged drawing of silicon nanowires part in Fig. 2 (a), and Fig. 2 (c) is light electrical resistivity survey
Survey the cross-sectional view of device.In figure x, y, z denotation coordination direction of principal axis, H, k, E represent the magnetic field intensity of light wave, wave vector respectively
And electric field intensity, the arrow on letter represents that correlative is vector.
Describe the structure of the photodetector based on two-photon absorption of the present invention with reference to Fig. 2 in detail.As shown in Fig. 2 this
The photodetector of invention includes from bottom to top：The first silicon layer 1 as substrate；Titanium dioxide positioned at the upper surface of the first silicon layer
Silicon layer 2；Positioned at the second silicon layer 3 of the upper surface of silicon dioxide layer, after this second silicon layer is etched, be formed as concentric-circle grating
Shape；Silicon nanowires 4, the upper surface of the silicon dioxide layer 2 being located at, this silicon nanowires 3 is by the etched rear shape of the second silicon layer 3
Become, for receiving incident illumination；And plasma antenna is to 5, positioned at silicon dioxide layer 2 upper surface and etched after
The upper surface of the second silicon layer 3 in concentric-circle grating shape, for constraining in the nano gap at silicon nanowires 4 light place by incident illumination
In 41, that is, strengthen the light intensity entering the incident illumination in the nano gap 41 that described silicon nanowires 4 is located.
By focusing on incident illumination as much as possible in nano gap 41, this plasma antenna can make described incident illumination to 5
Light intensity at least strengthens 5 orders of magnitude.In order to effectively strengthen the light intensity of incident illumination, this plasma antenna is designed to 5
Resonance on communication band.Communication band is the wave band near 1310nm and the wave band near 1550nm.Plasma antenna is to 5
It is made up of metal, this metal can be golden (Au) or silver-colored (Ag).
The structure of plasma antenna pair 5 is described in further detail below.Plasma antenna further includes one to 5
To fan spike antenna 51 and a pair of tapered dipole antennas 54.This is right to fan spike antenna 51 with the centrage perpendicular to silicon nanowires 4
Claim axle position in the both sides of silicon nanowires 4.Fan spike antenna 51 has：In concentric-circle grating shape, bottom be semicircle scallop 52；
The bar 53 parallel to silicon nanowires 4 projecting from the center of the bottom semicircular of scallop 52.The angular range of scallop 52 is 60
～120 degree of degree.In the present embodiment, the angle of this scallop 52 is 90 degree.Scallop 52 also includes concentric-circle grating portion 521
Half-round 522 with fan-shaped bottom.Concentric-circle grating portion 521 is made up of multiple subloops.
The bar 53 of fan spike antenna 51 is rectangular shaft.Fan the electrode simultaneously as silicon nanowires 4 for the spike antenna 51 for this pair, for receiving
The photo-generated carrier generating in collection silicon nanowires 4 is thus form photoelectric current.
A pair of tapered dipole antennas 54, it, perpendicular to silicon nanowires 4, is located at silicon nanowire 4 with silicon nanowires 4 for axis of symmetry
Both sides.Tapered dipole 54 also includes rectangular shank 541 and the tapered portion 542 of the one end near silicon nanowires.
In Fig. 2, g and W represents the length and width of nano gap 41.lfIt is the radius in the bottom semicircular portion of scallop 52.
hfAnd wfIt is the length and width of bar 53.H and haIt is the thickness of the second silicon layer and the thickness of metal level.ldRepresent tapered dipole sky
The edge of the rectangular shank 541 of line 54 (includes the length of rectangular shank 541, the height of tapered portion 542 to the length of nano gap
The top of degree and tapered portion 542 to nano gap distance, the distance about 10nm at the top of tapered portion 542 to nano gap is left
Right), WdRepresent the width of tapered dipole antennas 54, ltIt is the height of tapered portion.L represents the length of silicon nanowire 4.
One example of the design size of each element of plasma antenna 5 of the present invention and silicon nanowires 4 is as shown in table 1.
(table 1)
| Element title | Planar structure | Planar dimension (nm) | Thickness (nm) |
| Silicon nanowires | Rectangle | Length L：880, width：60 | 80 |
| Bar (parallel bar) | Rectangle | Length hf：385, width wf：100 | 130 |
| Bar portion (vertical rod) | Rectangle | Length：100, width Wd：50 | 50 |
| Tapered portion (vertical cone) | Isosceles triangle | Height lt：50, the long W in bottomd：50 | 50 |
| Half-round | Semicircle | Radius lf：460 | 130 |
| Subloop | Annulus | Internal diameter r：180, radius R：1800 | 50 |
| Concentric-circle grating portion | Annulus | Cycle rp：360 | 80 |
Fig. 3 be show the photodetector light intensity based on two-photon absorption of the present invention strengthen after silicon nanowires absorption cross-section
Figure.In figure, transverse axis represents lambda1-wavelength, and the longitudinal axis represents absorption cross-section.In figure two lines represent that metal is " silver-colored " respectively and constitute
Antenna and the antenna that constitutes of metal " golden ".As can be seen from Figure 5, near 1310nm wavelength, absorption cross-section reaches silver-colored antenna
0.5-0.55 (μm2).Golden antenna near 1310nm wavelength, absorption cross-section reached 0.45-0.5 (μm2).It can be seen that, lead to
After crossing the plasma antenna structure enhancing light intensity of the present invention, the absorption cross-section of two-photon absorption significantly increases, and is equivalent to light and inhales
Receive area to considerably increase.Resonance absorbing peak near 1310nm is suitable for optic communication.
Fig. 4 (a) is the electric field intensity square within the nano gap based on the photodetector of two-photon absorption showing the present invention
Distribution schematic diagram, plane shown in figure parallel to substrate, from SiO2 layer 48nm.Fig. 4 (b) is the light electrical resistivity survey showing the present invention
Survey the planar dimension schematic diagram of the silicon nanowire part of device.In Fig. 4 (a), transverse axis represents the distance along silicon nanowire length direction,
Centered at x=0, structure is symmetrical, and the left side longitudinal axis represents along silicon nanowire vertical direction distance, centered at y=0,
Structure is symmetrical above and below, and right side longitudinal axis color shows the light intensity everywhere along silicon nanowire vertical direction by being deep to superficial.As can be seen from Figure 4,
In the inside of nano gap 4, light intensity is ideally enhanced 5 grades.
It can be seen that, the present invention passes through to arrange plasma antenna pair, dramatically incident illumination can be focused on silicon nanowires and be located
Nano gap in, thus strengthening at least 5 orders of magnitude of light intensity.Which significantly enhances two-photon absorption in the total absorption coefficient of silicon
The contribution of mechanism, can produce electron-hole pair in large quantities therefore in silicon nanowires and photoelectric current.
In order to increase the responsiveness of photodetector further, the silicon nanowires in photodetector of the present invention have nucleocapsid structure or
Person's double-decker.For example, nucleocapsid structure by background p-type SiNW adulterate higher concentration n-type dopant make core-
Shell p-n junction.Nucleocapsid structure is designed to the active area of fully depleted nano wire, and greatly reduces the dark of photodetector
Electric current.
Fig. 5 (a) is the axonometric chart of the nucleocapsid structure of the silicon nanowires of the photodetector based on two-photon absorption showing the present invention,
Fig. 5 (b) is to show another kind of double-deck axonometric chart.As shown in Fig. 5 (a), the nucleocapsid structure of silicon nanowire includes p
Type core portion and N-shaped shell portion.The structure in the shell portion of this N-shaped and the core portion of p-type forms whole p-channel in nano gap and to make
Make having lateral depletion area.It is preferred that the width W=60nm, height h=80nm of the cross section of whole nano gap；The width in core portion
Wc=30nm, height hc=65nm.In figure Ls represents the length of n+ type doped region.In other embodiments, silicon nanowire
Nucleocapsid structure can also be N-shaped core portion and p-type shell portion.As shown in Fig. 5 (b), silicon nanowire structure can also be double-decker,
Including N-shaped top layer and p-type bottom.H represents the height of nano gap, and hn represents the height of n+ doped region, and Ls represents n+ type
The length of doped region.Or in a further embodiment, this double-decker can also be p-type top layer and N-shaped bottom.
Fig. 6 is nucleocapsid structure silicon nanowires knot length and the raceway groove electricity of the photodetector based on two-photon absorption showing the present invention
The graph of a relation of stream.Transverse axis represents the knot length of core shell structure silicon nanowires, and the longitudinal axis represents channel current.This knot length
Ls=50nm, the intensity of light source is 0.1mWcm-2, bias as 2V.Wherein, the doping content in p- shell portion and n+ core portion is respectively
P=1 × 1018cm-3, n=1 × 1019cm-3.It can be seen that when knot length is 50nm, under illumination, channel current is about
10-9A, and dark current is less than 10-12A.
Fig. 7 is the p-type background doped of the nucleocapsid structure silicon nanowires of the photodetector based on two-photon absorption showing the present invention
Concentration and the graph of a relation of channel current.In Fig. 7, transverse axis represents p-channel doping content (unit：cm-3), the longitudinal axis represents ditch
Road electric current (unit：A).In the present invention, the doping content scope in p-type core portion is 1 × 1017cm-3～1 × 1019cm-3, N-shaped shell
The doping content scope in portion is 1 × 1017cm-3～1 × 1019cm-3.
It can be seen that the optimum performance of this photodetector, that is, the photoelectric current of maximum possible and minimum dark current can be
P=1 × 1018cm-3When obtain.The concentration of N-shaped shell is n=1 × 1019cm-3, knot length Ls is 50nm, and the intensity of light source is 1wm-2,
Bias as 2V.As shown in current curve, when p-type doping content is more than 1 × 1018cm-3When, passage exhausts non-.Assume
Background light resistance is about 0.041 Ω cm, and channel cross-sectional area is 65 × 30nm2, passage length is 50nm, then the non-passage of exhausting
Electric current is calculated as about 49.9uA.
Fig. 8 is the comparison with axial photodiode for the nucleocapsid structure of the photodetector based on two-photon absorption showing the present invention
Figure.Fig. 8 (a) represents the figure of dark current, and Fig. 8 (b) represents the photoelectricity flow graph when not applying antenna to strengthen, Fig. 8 (c)
Represent the photoelectricity flow graph when applying antenna to strengthen.Solid line represents nucleocapsid structure silicon nanowires, and dotted line represents photodiode.Its
In, doping content n=1 × 1019cm-3, p=1 × 1018cm-3.The intensity of light source is 0.1wm-2.
Responsiveness R after the core-shell structure copolymer silicon nanowires photodetector plasma enhancing of the present invention is permissible when bias is for 1 (V)
It is calculated according to the following equation：
And when not using nucleocapsid structure, responsiveness R=1.86 (A/w) of photodetector of the present invention.It can be seen that, nucleocapsid structure
Silicon nanowires can increase the responsiveness of photodetector effectively.
In addition, when not applying plasma antenna, silicon nanowires cannot obtain response on wavelength 1310nm.
Fig. 9 be the photodetector based on two-photon absorption showing the present invention the photoelectric current of nucleocapsid structure silicon nanowires and secretly electricity
Stream and the graph of a relation of surface of silicon nanowires recombination velocity (SRV).Wherein, the intensity of light source is 1wm-2, wavelength be 1330 nanometers,
Bias as 1.8V.
Usually, nanowire surface volume ratio is very big, and surface recombination velocity (S.R.V.) can greatly increase the dark current of device and reduce device
Photoelectric current, had a strong impact on the performance of photoelectric device.In device architecture shown in Fig. 5, except bottom, depletion region is all away from table
Face, can be prevented effectively from the impact to device performance for the surface recombination.As can be known from Fig. 9, only when surface recombination velocity (S.R.V.) is more than 106cm/s
When, device dark current and photoelectric current just can be significantly increased respectively and reduce.Therefore, by the structure of the present invention, device is simultaneously not required to
Good surface passivation just can reach very high performance.
Figure 10 is the signal of frequency response during the different knot length of the photodetector based on two-photon absorption showing the present invention
Figure.As illustrated, transverse axis represents the frequency response of photodetector, the longitudinal axis represents photoelectric current.Article three, line represents different knots respectively
Length.It can be seen that when length Ls=50nm of n+ type doped region, 3-dB frequency (when the frequency of incident illumination increases,
Photoelectric current is reduced to the half of photoelectric current during low frequency) exceed about 300GHz.It can be seen that, the photodetector of the present invention can respond
High frequency optical signal, can be consequently used for ultra high-speed optical communication.Assume that the drift velocity of carrier is about 1 × 107cms-1, carrier
It is about 0.5ps through 50 nanometers long of core-shell structure copolymer depletion regions by Time Calculation, this numerical value is consistent with estimation result.Can
Simulation result as shown in Figure 10 is reasonable.
It is only presently preferred embodiments of the present invention in sum, be not used for limiting the practical range of the present invention.I.e. all according to Shen of the present invention
Please the equivalence changes made of content of the scope of the claims and modification, all should belong to the technology category of the present invention.
Claims (10)
1. a kind of silicon nanowires photodetector based on two-photon absorption is it is characterised in that include：
The first silicon layer as substrate；
Silicon dioxide layer positioned at the upper surface of the first silicon layer；
Second silicon layer, positioned at the upper surface of described silicon dioxide layer, etched after be formed as concentric-circle grating shape；
Silicon nanowires, positioned at the upper surface of described silicon dioxide layer, by described second silicon layer etched after formed, for receive into
Penetrate light；
Plasma antenna pair, positioned at described silicon dioxide layer upper surface and etched after be in described the of concentric-circle grating shape
The upper surface of two silicon layers, for strengthening the light intensity entering the incident illumination in the nano gap that described silicon nanowires is located,
Wherein, described plasma antenna is to also including：
A pair of fan spike antenna, has：In concentric-circle grating shape, bottom be semicircle scallop；From the bottom of described scallop half
The bar parallel to described silicon nanowires that the center of circle projects, and the pair of fan spike antenna is with perpendicular to described silicon nanowires
Centrage is located at the both sides of described silicon nanowires for axis of symmetry,
A pair of tapered dipole antennas, described tapered dipole antennas perpendicular to described silicon nanowires, with described silicon nanowires as axis of symmetry
Positioned at the both sides of described silicon nanowire,
The pair of fan spike antenna simultaneously as described silicon nanowires electrode, for collect in described silicon nanowires generate photoproduction
Carrier is thus form photoelectric current.
2. the silicon nanowires photodetector based on two-photon absorption according to claim 1 is it is characterised in that described
Plasma antenna at least strengthens 5 orders of magnitude to the light intensity making described incident illumination.
3. the silicon nanowires photodetector based on two-photon absorption according to claim 1 is it is characterised in that described
Plasma antenna is to being designed to resonance on the communication band near 1310nm and the communication band near 1550nm.
4. the silicon nanowires photodetector based on two-photon absorption according to claim 1 is it is characterised in that described
Plasma antenna is constituted to by metal, and described metal is golden or silver-colored.
5. the silicon nanowires photodetector based on two-photon absorption according to claim 1 is it is characterised in that described
The described bar of fan spike antenna is rectangular shaft.
6. the silicon nanowires photodetector based on two-photon absorption according to claim 1 is it is characterised in that described
The angle of scallop is 60 degree～120 degree.
7. the silicon nanowires photodetector based on two-photon absorption according to claim 1 is it is characterised in that described
Tapered dipole antennas include bar portion and the tapered portion of the one end near described silicon nanowires, and described bar portion is rectangle.
8. the silicon nanowires photodetector based on two-photon absorption according to claim 1 is it is characterised in that described
Silicon nanowire is nucleocapsid structure, including p-type core portion and N-shaped shell portion, or N-shaped core portion and p-type shell portion.
9. the silicon nanowires photodetector based on two-photon absorption according to claim 1 is it is characterised in that described
Nano thread structure is double-decker, including N-shaped bottom and p-type top layer, or p-type bottom and N-shaped top layer.
10. the silicon nanowires photodetector based on two-photon absorption according to claim 8 or claim 9 is it is characterised in that p
The doping content scope of type is 1 × 1017cm-3～1 × 1019cm-3, the doping content scope of N-shaped is 1 × 1017cm-3～1 × 1019cm-3.
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| CN109541733A (en) * | 2018-10-11 | 2019-03-29 | 中国石油大学(华东) | A kind of surface plasma lens design method for nano gap formula near field photolithography |
| CN111463298A (en) * | 2020-03-09 | 2020-07-28 | 中山大学 | Semiconductor nano-structure photoelectric detector and preparation method thereof |
| CN113991284A (en) * | 2021-11-03 | 2022-01-28 | 中国科学技术大学 | Device for local microwave field and preparation method thereof |
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| US20050048581A1 (en) * | 2003-08-25 | 2005-03-03 | Chiu Daniel T. | Method and device for biochemical detection and analysis of subcellular compartments from a single cell |
| US7906778B2 (en) * | 2007-04-02 | 2011-03-15 | Hewlett-Packard Development Company, L.P. | Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures |
| CN102201483A (en) * | 2011-05-13 | 2011-09-28 | 中国科学院半导体研究所 | Silicon nanowire grating resonant enhanced photoelectric detector and manufacturing method thereof |
| US20130134309A1 (en) * | 2011-11-10 | 2013-05-30 | Yissum and Research Development Company of the Hebrew University of Jerusalem LTD. | Nonlinear optical and electro-optical devices and methods of use thereof for amplification of non-linear properties |
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| US20050048581A1 (en) * | 2003-08-25 | 2005-03-03 | Chiu Daniel T. | Method and device for biochemical detection and analysis of subcellular compartments from a single cell |
| US7906778B2 (en) * | 2007-04-02 | 2011-03-15 | Hewlett-Packard Development Company, L.P. | Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures |
| CN102201483A (en) * | 2011-05-13 | 2011-09-28 | 中国科学院半导体研究所 | Silicon nanowire grating resonant enhanced photoelectric detector and manufacturing method thereof |
| US20130134309A1 (en) * | 2011-11-10 | 2013-05-30 | Yissum and Research Development Company of the Hebrew University of Jerusalem LTD. | Nonlinear optical and electro-optical devices and methods of use thereof for amplification of non-linear properties |
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| CN109541733A (en) * | 2018-10-11 | 2019-03-29 | 中国石油大学(华东) | A kind of surface plasma lens design method for nano gap formula near field photolithography |
| CN109541733B (en) * | 2018-10-11 | 2021-05-07 | 中国石油大学(华东) | Processing method and equipment for efficient and high-resolution nano-pattern |
| CN111463298A (en) * | 2020-03-09 | 2020-07-28 | 中山大学 | Semiconductor nano-structure photoelectric detector and preparation method thereof |
| CN113991284A (en) * | 2021-11-03 | 2022-01-28 | 中国科学技术大学 | Device for local microwave field and preparation method thereof |
| CN113991284B (en) * | 2021-11-03 | 2022-12-30 | 中国科学技术大学 | Device for local microwave field and preparation method thereof |
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