CN106486512B - Organic light emitting diode device and organic light emitting display - Google Patents
Organic light emitting diode device and organic light emitting display Download PDFInfo
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- CN106486512B CN106486512B CN201510548474.4A CN201510548474A CN106486512B CN 106486512 B CN106486512 B CN 106486512B CN 201510548474 A CN201510548474 A CN 201510548474A CN 106486512 B CN106486512 B CN 106486512B
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Abstract
The present invention relates to an organic light emitting diode device and an organic light emitting display, which includes: the organic light emitting diode comprises an anode layer, a cathode layer and an organic light emitting layer positioned between the anode layer and the cathode layer; the anode layer includes: a first transparent conductive layer and a reflective layer which are arranged in a stacked manner; the first transparent conducting layer is positioned on one side of the reflecting layer from which reflected light exits; wherein the reflective layer includes an Ag layer and an AlNd layer, the Ag layer being closer to the first transparent conductive layer. According to the organic light-emitting diode device, the reflecting layer of the anode layer comprises the Ag layer and the AlNd layer, and compared with the existing reflecting layer, the thickness of the Ag layer is reduced, so that the possibility of generating bulges on the side edge of the Ag layer is reduced, even if the bulges are generated, the height is very limited, and the influence on the performance of the organic light-emitting diode device is small; therefore, the requirement for process control is greatly reduced, and process variation is not easy to occur.
Description
Technical Field
The invention relates to the field of organic electroluminescence, in particular to an organic light-emitting diode device and an organic light-emitting display.
Background
An Organic Light Emitting Device (OLED) is a device which excites an organic material to emit light by recombination of carriers injected after voltage is applied, has the advantages of self-luminescence, high efficiency, low voltage, fast response, wide viewing angle, capability of being manufactured on a flexible substrate and the like, can be manufactured into a display or an illuminating device, and is attracted by social attention.
Since OLEDs are self-emissive display technologies, the luminous efficiency of OLEDs is related to the design of the chosen light emitting materials, backplane, and peripheral components. The OLED must rely on the reflective layer to reflect the light emitted by the light-emitting material away from the user direction toward the user direction, so as to improve the light-emitting brightness and enhance the related display performance.
OLEDs can be classified into three types, a top emission type, a bottom emission type, and a two-sided emission type, according to the traveling direction of light emitted from an organic material. In general, a top emission type OLED may emit light in the opposite direction of a substrate on which unit pixels are arranged and have a high aperture ratio.
In the top emission type structure, the anode layer generally has a reflective structure for reflecting light generated from the organic light emitting layer. The existing anode layer has a structure of first transparent conductive layer/reflective layer/second transparent conductive layer, referring to fig. 1, the first transparent conductive layer 101 and the second transparent conductive layer 103 are formed by ITO, and the reflective layer 102 in the middle is an Ag layer; the pixel defining layers 104 are disposed on both sides of the anode layer, and form light-emitting openings together with the anode layer; since the Ag layer is easily protruded during the formation process, the width CD1 of the light exit opening (the width of the light exit opening is limited by the pixel definition layer 104) must be controlled to be smaller than the line width CD2 of the Ag layer (the line width of the surface on the light exit side) in the manufacturing process, and the pixel definition layers 104 on both sides cover the Ag layer, so as to avoid the protrusion generated by the exposure of Ag on both sides, thereby causing the generation of the display dark spot. However, the etching process of the Ag layer and the alignment between the reflective layer 102 and the pixel defining layer 104 are highly required.
Disclosure of Invention
In view of the above-mentioned problems and/or other problems of the prior art, the present invention provides an organic light emitting diode device, including: the organic light emitting diode comprises an anode layer, a cathode layer and an organic light emitting layer positioned between the anode layer and the cathode layer; the anode layer includes: a first transparent conductive layer and a reflective layer which are arranged in a stacked manner; the first transparent conducting layer is positioned on one side of the reflecting layer from which reflected light exits; wherein the reflective layer includes an Ag layer and an AlNd layer, the Ag layer being closer to the first transparent conductive layer.
Preferably, the thickness of the reflecting layer is 1000-2000 angstroms, and the thickness range of the Ag layer is 300-500 angstroms.
Preferably, the reflective layer has a reflectivity of 92%.
Preferably, the first transparent conductive layer is formed of indium tin oxide or indium zinc oxide.
Preferably, the electrode layer further includes a second transparent conductive layer disposed in a stacked manner, and the reflective layer is located between the first transparent conductive layer and the second transparent conductive layer.
Preferably, the second transparent conductive layer is formed of indium tin oxide or indium zinc oxide.
The present invention also provides an organic light emitting display, which includes a substrate, a buffer layer, a driving element, a planarization layer, an anode layer, a cathode layer, an organic light emitting layer between the anode layer and the cathode layer, and a pixel defining layer around the organic light emitting layer and forming a light emitting opening together with the anode layer, wherein the anode layer includes: a first transparent conductive layer and a reflective layer which are arranged in a stacked manner; the first transparent conducting layer is positioned on one side of the reflecting layer from which reflected light exits; wherein the reflective layer includes an Ag layer and an AlNd layer, the Ag layer being closer to the first transparent conductive layer.
Preferably, the width of the light exit opening defined by the pixel definition layer is smaller than or equal to the line width of the Ag layer.
Preferably, the thickness of the reflecting layer is 1000-2000 angstroms, and the thickness range of the Ag layer is 300-500 angstroms.
Preferably, the reflective layer has a reflectivity of 92%.
In the organic light-emitting diode device, the reflecting layer of the anode layer comprises the Ag layer and the AlNd layer, and compared with the existing reflecting layer, the thickness of the Ag layer is reduced, so that the possibility of generating bulges on the side edge of the Ag layer is reduced, and even if the bulges are generated, the bulge height is very limited, and the influence on the performance of an organic light-emitting display is small; therefore, the requirement for process control is greatly reduced, and process variation is not easy to occur.
Drawings
FIG. 1 is a schematic partial cross-sectional view of an anode layer and a pixel definition layer of an organic light emitting diode device according to the prior art;
FIG. 2 is a schematic partial cross-sectional view of an organic light emitting display according to an embodiment of the invention;
fig. 3 is a schematic cross-sectional view of an anode layer of an organic light emitting diode device according to an embodiment of the invention.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their repetitive description will be omitted.
The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to provide a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that the invention may be practiced without one or more of the specific details, or with other methods, components, materials, and so forth. In some instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring the invention.
The drawings of the present invention are only for illustrating the relative positional relationship and the electrical connection relationship, the layer thicknesses of some parts are exaggerated in a drawing manner for easy understanding, and the layer thicknesses in the drawings do not represent the proportional relationship of the actual layer thicknesses.
Referring to fig. 2, a partial cross-sectional view of an organic light emitting display according to an embodiment of the present invention includes a substrate 10, a buffer layer 20, a driving element 40, a planarization layer 30, and an organic light emitting diode device structure formed on the planarization layer 30.
The organic light emitting diode device structure includes an anode layer 2, a Hole Injection Layer (HIL)3, a Hole Transport Layer (HTL)4, an organic light emitting layer (EML)5, an Electron Transport Layer (ETL)6, a cathode layer 7, and an encapsulation layer 9, which are sequentially stacked on a planarization layer 30, and a pixel defining layer 8 disposed on the planarization layer 30 around the organic light emitting layer 5 to define a light exit opening.
Referring to fig. 3, the anode layer 2 includes a first transparent conductive layer 21 and a reflective layer 22, which are stacked. The first transparent conductive layer 21 is located on the side of the reflective layer 22 from which the reflected light is emitted (the arrow indicates the direction in which the reflected light is emitted).
The reflective layer 22 includes an Ag layer 221 and an AlNd layer 222. The Ag layer 221 is located on the side of the reflective layer 22 from which the reflected light is emitted, and the AlNd layer 222 is located on the other side. In one embodiment of the present invention, the first transparent conductive layer 21, the Ag layer 221, and the AlNd layer 222 are sequentially stacked (directly contacted) and disposed, but not limited thereto. In another embodiment of the present invention, at least one conductive material layer, for example, a conductive material layer that is less likely to generate a bump, may be interposed between the Ag layer 221 and the AlNd layer 222. In another embodiment of the present invention, the other side (the side opposite to the side from which reflected light exits) of the AlNd layer 222 may be provided with at least one conductive material layer, for example, a conductive material layer that is relatively free from projections.
In the anode layer structure of the present embodiment, the reflective layer 22 includes the Ag layer 221 and the AlNd layer 222, and compared with the conventional conductive reflective layer, the thickness of the Ag layer 221 is reduced, so that the possibility of generating a bump on the side of the Ag layer 221 is reduced, and even if a bump is generated, the bump height is very limited, and the performance of the organic light emitting diode device is less affected; therefore, with the reflective layer of the present embodiment, it is not necessary to satisfy the requirement of controlling the width of the light-emitting opening defined by the pixel definition layer 8 to be smaller than the line width of the Ag layer 221, and in addition, it is not necessary to completely cover the two side edges of the Ag layer 221 with the pixel definition layer 8, so the requirement for process control is greatly reduced, and process variation is not easily generated.
In the present embodiment, the thickness of the reflective layer 22 is 1000 to 2000 angstroms, wherein preferably, the thickness of the Ag layer 221 may be 300 to 500 angstroms.
In the present embodiment, the reflectance of the Ag layer 221 is 94%, and the reflectance of the entire reflective layer 22 is 92%.
With the aid of the AlNd layer 222, the thickness of the Ag layer 221 only needs to maintain the basic reflectance and the apparent roughness, i.e., can be made thinner, reducing the probability of generating protrusions on the side of the Ag layer 221.
In this embodiment, the structure of the anode layer 2 further comprises a second transparent conductive layer 23 arranged in a stacked manner opposite to the first transparent conductive layer 21, i.e. the reflective layer 22 is located between the first transparent conductive layer 21 and the second transparent conductive layer 23.
In the present embodiment, both the first transparent conductive layer 21 and the second transparent conductive layer 23 are formed of indium tin oxide. In other embodiments both the first transparent conductive layer 21 and the second transparent conductive layer 23 may be formed of indium zinc oxide or one may be formed of indium tin oxide and the other indium zinc oxide.
In the present embodiment, the line width of the light exit opening defined by the pixel defining layer 8 is equal to the line width of the surface of the Ag layer 221 on the side of the reflected light exit direction.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (8)
1. An organic light emitting diode device, comprising:
the organic light emitting diode comprises an anode layer, a cathode layer and an organic light emitting layer positioned between the anode layer and the cathode layer; and locate at the said organic luminescent layer and form the pixel definition layer of the light-emitting opening together with said anode layer;
the anode layer includes:
a first transparent conductive layer and a reflective layer which are arranged in a stacked manner;
the first transparent conducting layer is positioned on one side of the reflecting layer from which reflected light exits;
wherein the content of the first and second substances,
the reflecting layer comprises an Ag layer and an AlNd layer, the Ag layer is closer to the first transparent conducting layer, the thickness of the reflecting layer is 1000-2000 angstroms, and the thickness range of the Ag layer is 300-500 angstroms;
the line width of the Ag layer is equal to the width of the light outlet opening defined by the pixel definition layer.
2. The organic light emitting diode device of claim 1, wherein: the reflective layer has a reflectivity of 92%.
3. The organic light-emitting diode device according to claim 1 or 2, wherein: the first transparent conductive layer is formed of indium tin oxide or indium zinc oxide.
4. The organic light-emitting diode device according to claim 1 or 2, wherein: the anode layer further comprises a second transparent conducting layer arranged in a stacked mode, and the reflecting layer is located between the first transparent conducting layer and the second transparent conducting layer.
5. The organic light emitting diode device according to claim 4, wherein: the second transparent conductive layer is formed of indium tin oxide or indium zinc oxide.
6. An organic light emitting display comprising a substrate, a buffer layer, a driving element, a planarization layer, an anode layer, a cathode layer, an organic light emitting layer between the anode layer and the cathode layer, and a pixel defining layer around the organic light emitting layer and forming a light emitting opening together with the anode layer, wherein the anode layer comprises:
a first transparent conductive layer and a reflective layer which are arranged in a stacked manner;
the first transparent conducting layer is positioned on one side of the reflecting layer from which reflected light exits;
wherein the content of the first and second substances,
the reflecting layer comprises an Ag layer and an AlNd layer, the Ag layer is closer to the first transparent conducting layer, the thickness of the reflecting layer is 1000-2000 angstroms, and the thickness range of the Ag layer is 300-500 angstroms;
the width of the light outlet opening defined by the pixel definition layer is equal to the line width of the Ag layer.
7. The organic light emitting display of claim 6, wherein: the thickness of the reflecting layer is 1000-2000 angstroms.
8. The organic light emitting display of claim 6, wherein: the reflective layer has a reflectivity of 92%.
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| CN109301092B (en) * | 2018-08-31 | 2020-10-16 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and manufacturing method thereof |
| WO2020056623A1 (en) * | 2018-09-19 | 2020-03-26 | Boe Technology Group Co., Ltd. | Light emitting diode and fabricating method thereof, display substrate, and display apparatus |
| CN110112308A (en) * | 2019-04-29 | 2019-08-09 | 武汉华星光电半导体显示技术有限公司 | A kind of display panel and preparation method thereof and display device |
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| CN101661948A (en) * | 2008-08-26 | 2010-03-03 | 乐金显示有限公司 | Organic light emitting diode display and fabricating method thereof |
| CN104576684A (en) * | 2013-10-29 | 2015-04-29 | 乐金显示有限公司 | Organic light emitting display and method of fabricating the same |
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| CN101661948A (en) * | 2008-08-26 | 2010-03-03 | 乐金显示有限公司 | Organic light emitting diode display and fabricating method thereof |
| CN104576684A (en) * | 2013-10-29 | 2015-04-29 | 乐金显示有限公司 | Organic light emitting display and method of fabricating the same |
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Address after: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |
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Address after: 201506, No. nine, No. 1568, Jinshan Industrial Zone, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: Shanghai Hehui optoelectronic Co., Ltd |