CN106482754A - Encoder - Google Patents
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- CN106482754A CN106482754A CN201610719370.XA CN201610719370A CN106482754A CN 106482754 A CN106482754 A CN 106482754A CN 201610719370 A CN201610719370 A CN 201610719370A CN 106482754 A CN106482754 A CN 106482754A
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- offset voltage
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- 238000012544 monitoring process Methods 0.000 claims abstract description 27
- 238000012360 testing method Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 21
- 238000004891 communication Methods 0.000 claims description 10
- 230000009471 action Effects 0.000 abstract description 5
- 230000004913 activation Effects 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 description 29
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 238000012545 processing Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000005284 excitation Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 210000001550 testis Anatomy 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/244—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing characteristics of pulses or pulse trains; generating pulses or pulse trains
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0017—Means for compensating offset magnetic fields or the magnetic flux to be measured; Means for generating calibration magnetic fields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
- H02K11/20—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection for measuring, monitoring, testing, protecting or switching
- H02K11/21—Devices for sensing speed or position, or actuated thereby
- H02K11/215—Magnetic effect devices, e.g. Hall-effect or magneto-resistive elements
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
Abstract
The present invention provides a kind of encoder of impact of temperature characterisitic that can reduce magnetoresistive element to offset voltage is produced.In encoder course of action, offset voltage and the temperature group pair of Magnetosensing element are recorded in storage part (95) by compensation adjustment portion (94) successively.Compensation adjustment portion (94) calculates approximate expression based on the data of storage part (95), so as to calculate the temperature characterisitic of offset voltage.In the case that compensation adjustment portion (94) is once started on encoder, offset voltage is calculated based on the testing result in temperature monitoring resistive film Yu temperature computation portion (93), temperature characterisitic after activation at once.
Description
Technical field
The present invention relates to a kind of encoder, more particularly to a kind of encoder with magnet sensor arrangement.
Background technology
In the encoder of the rotation of detection rotary body, for example, one kind is set magnet is set on rotation side, in fixed body
Side has the magnet sensor arrangement of magnetoresistive element (hereinafter referred to as " MR element ") or Hall element.In the magnet sensor arrangement
In, the sense magnetic film being made up of magnetoresistive film is formed with the one side of substrate, based on from by sense the magnetic film two-phase (A phase and the B that constitute
Phase) bridgt circuit output output, detect the angular speed of rotary body or angle position etc..
Here, usually, for the MR element used in magnet sensor arrangement, the resistance value of the sense magnetic film of Hall element
Change because of temperature.Even if therefore, it is proposed to a kind of variation of ambient temperature is also obtained in that the technology (example of stable accuracy of detection
As with reference to patent document 1).Specifically, temperature monitoring resistive film is formed with the substrate for forming thoughts magnetic film and is added
Hot resistive film (heater pattern).And, using the temperature difference of resistance value pair and the design temperature of temperature monitoring resistive film,
Temperature change is monitored, and is powered to heating electric resistance film based on monitoring result, and sense magnetic film is heated to design temperature.Cause
This, when environment temperature changes, even if the impact resistance variations for causing in stress, the electricity caused because of the difference of film quality
In the case of resistiveization difference, it is not easy to be subject to because of affecting that environment temperature causes, even if therefore occurrence temperature change, it is also possible to
Obtain stable accuracy of detection.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2014-194360 publication
Content of the invention
Invent technical problem to be solved
However, in technology disclosed in patent document 1, carrying out temperature control using heater pattern and keeping MR element
For steady temperature, but there is problems with：(1) when starting, the temperature to MR element becomes constant and needs the cost time,
(2) as temperature sensor is different from the allocation position of sense magnetic film, therefore the temperature in chip is differed, easily because of Temperature Distribution
Cause to produce error, (3) changes over time in order to tackle offset voltage, offset voltage when using last time action as
MR element offset voltage when dynamic, but this does not account for temperature characterisitic.For example there are the following problems：High in temperature in action
In the state of record compensation, but due to start when the low therefore error of temperature big.
The present invention be in view of such situation and complete, its objective is to provide a kind of shadow of the temperature characterisitic for making MR element
Ring the encoder for reducing.
Solve the technical scheme adopted by technical problem
The encoder of the present invention has：Magnetoresistive element, the magnetoresistive element are formed on substrate；Offset voltage test section,
The offset voltage test section detects the offset voltage of the magnetoresistive element；Temperature detecting part, the temperature detecting part detect institute
State the temperature of magnetoresistive element；Storage part, the storage part associatedly record the temperature of the offset voltage and the magnetoresistive element；
And offset voltage specified part, the offset voltage specified part according to be recorded in the offset voltage of the storage part with described
The data of the temperature of magnetoresistive element, calculate the expression offset voltage approximate with the relation of the temperature of the magnetoresistive element
Formula, when starting, according to the offset voltage that the temperature estimation of the magnetoresistive element is current based on the approximate expression, and will push away
The fixed offset voltage is used as new offset voltage.Therefore, when starting need not heating element heater etc. carry out thermostatic control, even if
Time till not becoming steady temperature, it is also possible to obtain appropriate offset.That is, can obtain at once after activation high-precision
The output of degree.
Also, the temperature detecting part can also be formed on substrate described in the identical of the magnetoresistive element.
Therefore, the temperature detection of magnetoresistive element itself can be actually realized, i.e., can realizes the temperature detection of high precision.
Also, the offset voltage and the temperature association of the magnetoresistive element can also be recorded in the storage part
When, temperature range Range-partition according to the rules so that the offset voltage detected in the temperature range is average.Therefore, lead to
Cross and divide according to the temperature range of regulation and offset voltage is equalized and record, data capacity can be suppressed.Can for example select
Select the little storage part of capacity, and can chronically record data, long-term Data correction can be carried out.
Also, deviate regulation with the relation of the temperature of the magnetoresistive element with the approximate expression in the offset voltage that measures
In the case that amount is above, the offset voltage specified part can also calculate new approximate expression based on new data.Therefore,
In the case of causing offset voltage significantly to deviate because of transient cause etc., by the temperature of approximate expression, i.e. magnetoresistive element is special
Fixed temporarily reset, is obtained in that offset voltage corresponding with situation.
Also, can also the temperature detecting part detect once institute in each communication cycle with outside control device
The temperature of magnetoresistive element is stated, the offset voltage specified part calculates the approximate expression in the communication cycle.That is, from angle
During degree response beginning carrys out the request of self-control device to the next one, temperature calculation process is executed.Consequently, it is possible to pass through according to logical
The letter cycle carries out temperature detection, compared with the situation for carrying out temperature detection by non-periodically such as interrupt processings, can will process letter
Change.That is, process time can be substantially ensured that, therefore, it is possible to reliably terminate temperature calculation process.
Also, can also the temperature detecting part calculate the resistance value of the magnetoresistive element, according to the resistance for calculating
The current temperature of value detection.Therefore, because using the resistance value of magnetoresistive element itself, therefore need not in addition arrange temperature detection
Portion.Also, due to being capable of detecting when the temperature of the magnet sensing part of magnetoresistive element, therefore reducing causes because of the Temperature Distribution in chip
Error.
Also, can also the temperature detecting part there is temperature monitoring resistive film, temperature monitoring resistive film shape
Become and be formed with the substrate of the magnetoresistive element.Therefore, by the base of the temperature of the magnet sensing part in detection magnetoresistive element
On plinth, using temperature monitoring resistive film, the Temperature Distribution of (on substrate) in chip is will appreciate that such that it is able to reduce because of temperature
The error that distribution causes.
Invention effect
In accordance with the invention it is possible to provide a kind of temperature characterisitic for making magnetoresistive element coding that the impact to offset voltage reduces
Device.
Description of the drawings
Fig. 1 is the figure of the principle for representing magnet sensor arrangement and rotary encoder involved by first embodiment.
Fig. 2 is to represent the sense for magnet sensor arrangement and the Magnetosensing element of rotary encoder involved by first embodiment
The figure of the electric connection structure of magnetic film.
Fig. 3 is the figure of the planar structure of the Magnetosensing element for representing the magnet sensor arrangement involved by first embodiment.
Fig. 4 is the block diagram of the control unit involved by first embodiment.
Fig. 5 is chart of the temperature with the relation of offset voltage for representing the Magnetosensing element involved by first embodiment.
Fig. 6 is to represent the sense for magnet sensor arrangement and the Magnetosensing element of rotary encoder involved by second embodiment
The figure of the electric connection structure of magnetic film.
Specific embodiment
Hereinafter, referring to the drawings to applying the magnet sensor arrangement of the present invention and the embodiment of rotary encoder to say
Bright.In addition, in rotary encoder, in order to detect rotation of the rotary body with respect to fixed body, can adopt and arrange in fixed body
Magnet, arranges the structure of Magnetosensing element in rotary body and arranges Magnetosensing element in fixed body, arrange the knot of magnet in rotary body
Any one structure in structure, but in the following description, Magnetosensing element is arranged in fixed body, magnet is set in rotary body
Structure centered on illustrate.
＜ first embodiment ＞
Fig. 1 is the principle of the magnet sensor arrangement 10 involved by the first embodiment for representing the present invention and rotary encoder 1
Explanatory diagram.Fig. 1 (a) is the figure that the signal processing system with respect to 4 grade of Magnetosensing element is described.Fig. 1 (b) is illustrated from sense magnetic unit
The figure of the signal that part 4 is exported.Fig. 1 (c) is the figure of the relation of the angle position (electric angle) for representing signal and rotary body 2.Fig. 2 is to say
The electrical connection of the sense magnetic film 41～44 (magnetoresistive film) of the bright Magnetosensing element 4 for magnet sensor arrangement 10 and rotary encoder 1
The figure of structure.Fig. 2 (a) represents the sense magnetic film 43 of+A phase and the figure for feeling the bridge circuit 4a constituted by magnetic film 41 of-A phase.Fig. 2
B () represents the sense magnetic film 44 of+B phase and the figure for feeling the bridge circuit 4b constituted by magnetic film 42 of-B phase.
Rotary encoder 1 shown in Fig. 1 be by 10 Magnetic testi rotary body 2 of magnet sensor arrangement with respect to fixed body (not
Diagram) around axis (around rotation axis) rotation device.Fixed body is fixed on framework of motor apparatus etc., rotary body 2 with
Use in the state of the connection such as rotating output shaft of motor apparatus.Magnet 20, the N of the magnet 20 are maintained in 2 side of rotary body
Pole and S pole are circumferentially magnetized with the side of the magnetizing surface 21 of a pole towards rotation axis direction L respectively.The magnet 20 and rotary body
2 integratedly rotate around rotation axis.
Fixing side is provided with magnet sensor arrangement 10, the magnet sensor arrangement 10 is with Magnetosensing element 4 and control
Portion 90 etc., the Magnetosensing element 4 are opposite with the magnetizing surface 21 of magnet 20 in the side of rotation axis direction L, the control unit 90
Carry out aftermentioned process.Also, magnet sensor arrangement 10 has the first Hall element 61 and second in the position opposite with magnet 20
Hall element 62.Second Hall element 62 is located at the position for deviateing 90 ° of mechanical angles with the first Hall element 61 in the circumferential.
Magnetosensing element 4 be with substrate 40 and with respect to magnet 20 phase place each other have 90 ° phase difference two-phase
The magnetoresistive element of sense magnetic film (the sense magnetic film of the sense magnetic film of A phase (SIN) and B phase (COS)).Specifically, the sense magnetic film bag of A phase
Include the phase difference with 180 ° and carry out sense magnetic film 43 and the-A phase (SIN-) of+A phase (SIN+) of the mobile detection of rotary body 2
Sense magnetic film 41.Similarly, the sense magnetic film of B phase includes phase difference with 180 ° and carries out the+B of the mobile detection of rotary body 2
The sense magnetic film 44 of phase (COS+) and the sense magnetic film 42 of-B phase (COS-).
As shown in Fig. 2 (a), one end of sense magnetic film 41 and the power supply terminal of A phase of feeling magnetic film 43 and-A phase of+A phase
VccA connects, and the other end is connected with the ground terminal GNDA of A phase.The point midway of the sense magnetic film 43 of+A phase is provided with output
Lead-out terminal+the A of+A phase.Lead-out terminal-the A of output-A phase is provided with the point midway of the sense magnetic film 41 of-A phase.
As shown in Fig. 2 (b), sense sense magnetic film 44 and the-A also with+A phase of magnetic film 42 for feeling magnetic film 44 and-B phase of+B phase
Similarly, one end is connected the sense magnetic film 41 of phase with the power supply terminal VccB of B phase, the ground terminal GNDB of the other end and B phase
Connection.Fan-out+the B of output+B phase is provided with the point midway of the sense magnetic film 44 of+B phase, in the sense magnetic film of-B phase
42 point midway is provided with the lead-out terminal-B of output-B phase.
In addition, for convenience, the power supply terminal VccA of A phase and the power supply terminal of B phase are described in fig. 2 respectively
VccB, but the power supply terminal VccA of A phase can be also shared with the power supply terminal VccB of B phase.Also, for convenience, in Fig. 2
The middle ground terminal GNDA for the describing A phase respectively and ground terminal GNDB of B phase, but the ground terminal of A phase
The ground terminal GNDB of GNDA with B phase can also be shared.
As shown in Fig. 1 (a), the Magnetosensing element 4 of such structure is configured at the magnetic on the L of rotation axis direction with magnet 20
Change the position that boundary member is overlapped.Therefore, the sense magnetic film 41～44 of Magnetosensing element 4 can be in the resistance value of each sense magnetic film 41～44
Saturation sensitive area more than magnetic field intensity under detection towards on direction in the face of magnetizing surface 21 change rotating excitation field.
That is, in magnetization boundary line part, magnetic field of the generation more than the saturation sensitive area of the resistance value of each sense magnetic film 41～44 is strong
The lower rotating excitation field towards direction change in face of degree.
Here, saturation sensitivity is generally referred to as resistance change k approx can use " k ∝ H2 " with magnetic field intensity H
Region beyond the region that formula represents.Also, rotating excitation field (magnetic is detected under magnetic field intensity more than saturation sensitive area
The rotation of vector) direction when principle be using following items：In the state of being energized to sense magnetic film 41～44, apply resistance
During the magnetic field intensity of value saturation, exist between resistance value R of magnetic field and sense of current angulation θ and sense magnetic film 41～44
The relation that following formula represents.
R=R0-k×SIN2θ
R0：Nothing the resistance value under magnetic field
K：Resistance change amount (being constant when more than saturation sensitive area)
If based on the principle that detection rotating excitation field, once angle, θ changes, then resistance value R changes along sine wave, therefore can
Enough the higher A phase of acquisition waveform quality is exported and B phase is exported.
As shown in Fig. 1 (a), control unit 90 is connected with magnet sensor arrangement 10.Specifically, in Magnetosensing element 4 by putting
Big circuit 31,32 is connected with control unit 90, also, the first Hall element 61 and the second Hall element 62 pass through amplifying circuit
35th, 36 control unit 90 is connected with.
Control unit 90 has to sine wave signal sin, cos for export from magnet sensor arrangement 10 carries out interpolation processing and respectively
CPU (computing circuit) of calculation process etc. is planted, based on from Magnetosensing element 4, the first Hall element 61 and the second Hall element
62 output, obtains rotary angle position of the rotary body 2 with respect to fixed body.
More particularly, in rotary encoder 1, if rotary body 2 rotates a circle, from 4 (magnetic resistance unit of Magnetosensing element
Part) output two cycles Fig. 1 (b) shown in sine wave signal sin, cos.Control unit 90 is put by being exaggerated circuit 31,32
Big sine wave signal sin, cos obtains the Lissajous figure shown in Fig. 1 (c), and is asked according to sine wave signal sin, cos further
Go out θ=tan-1(sin/cos), the angular position of rotating output shaft is calculated.
In addition, in the present embodiment, the position for deviateing 90 ° when observing from the center of magnet 20 is configured with the first Hall
Element 61 and the second Hall element 62.Therefore, by the group of the output of the first Hall element 61 and the second Hall element 62
Close, it is known that current location is located at which interval of sine wave signal sin, cos.As a result, rotary encoder 1 can be based on
The testing result of the testing result of Magnetosensing element 4, the testing result of the first Hall element 61 and the second Hall element 62 is generated
The absolute angular position information of rotary body 2, and absolute action can be carried out.
Fig. 3 be for the figure of the Magnetosensing element 4 of magnet sensor arrangement 10 is described.Here, illustrating the planar junction of Magnetosensing element 4
Structure, for convenience, marks towards bottom-right oblique line to temperature monitoring resistive film 47.
As illustrated, in magnet sensor arrangement 10, Magnetosensing element 4 is with substrate 40 and the one side for being formed at substrate 40
Sense magnetic film 41～44 on 40a.Sense magnetic film 41～44 consists of circular the part that mutually folding extends in the central authorities of substrate 40
Sense magnetic area 45.Substrate 40 is, for example, the silicon substrate of the flat shape with quadrangle.
Distribution part is integratedly extended with from sense magnetic film 41～44, the power supply of A phase is provided with the end of distribution part
Lead-out terminal-A, B that lead-out terminal+the A ,-A that ground terminal the GNDA ,+A of terminal VccA, A phase is mutually exported mutually is exported
Lead-out terminal+B that ground terminal the GNDB ,+B of power supply terminal VccB, B phase mutually is mutually exported and-B are mutually exported
Lead-out terminal-B.
Also, temperature monitoring resistive film 47 is formed with one side 40a of substrate 40.Temperature monitoring resistive film 47 is arranged
In the lower right region of the substrate 40 of diagram, near sense magnetic area 45.Temperature monitoring resistive film 47 is formed as repeatedly turning back ground
The flat shape of extension.Here, in the top view of diagram, temperature monitoring resistive film 47 and the distribution part for feeling magnetic film 44
Local overlaps, but temperature monitoring resistive film 47 is formed at the area being just upwardly deviated from the face of substrate 40 with sense magnetic area 45
Domain is not overlap with sense magnetic area 45.
Temperature monitoring resistive film 47 is the conducting film for not showing magnetic resistance effect.Therefore, though magnetic flux density with respect to
Temperature monitoring resistive film 47 changes, it is also possible to monitor temperature.Also, due to temperature monitoring with resistive film 47 with same
Magnetosensing element 4 (sense magnetic film 41～44) on substrate is adjacent to be formed, therefore, it is possible to high accuracy and detection sense in high sensitivity
The temperature of magnetic cell 4.
The power supply terminal VccS of temperature monitoring is formed with an end of temperature monitoring resistive film 47.Also, temperature
Another end of degree monitoring resistive film 47 is connected with the ground terminal GNDB of B phase.Therefore, the ground terminal of B phase
GNDB is also used as the ground terminal GNDS with respect to temperature monitoring resistive film 47.
Fig. 4 is the block diagram of control unit 90.Control unit 90 is with ADC portion 91, signal processing part 92, temperature computation portion 93, benefit
Repay adjustment portion 94 and storage part 95.
Analog signal is transformed to number by carrying out A/D conversion to the output from magnet sensor arrangement 10 by ADC portion 91
Word signal.Signal processing part 92 detects rotary angle position and the rotary speed of magnet 20 based on the signal for having carried out A/D conversion
Deng.
Temperature computation portion 93 carries out the temperature calculation process with regard to Magnetosensing element 4, and passes through temperature monitoring resistive film 47
Resistance value detection and the temperature difference of design temperature, temperature change.
As the opportunity of temperature detection, such as in each control device (upper dress with the regulation of control rotary encoder 1
Put) communication cycle in detection once, and enter trip temperature calculation process in communication cycle.That is, from angular response start to
During the next one carrys out the request of self-control device, temperature calculation process is executed.Temperature calculation process terminates in several 10 μ s, therefore
In the communication cycle that periodicity has period more sufficiently long than 10 μ s, reliably terminate to process.By entering according to communication cycle
Trip temperature is detected, compared with the situation of temperature detection is non-regularly carried out by interrupt processing etc., can be simplified processing.
Compensation adjustment portion 94 by the offset voltage that obtains based on the output of Magnetosensing element 4 and utilizes temperature computation portion 93
The component temperature for detecting associatedly is recorded in storage part 95 successively.And, compensation adjustment portion 94 is deposited with being recorded in when starting
The temperature characterisitic of offset voltage based on these data in storage portion 95, is calculated, and benefit during starting is calculated according to current temperature
Repay voltage.In addition, in the case that the writing of storage part 95 is full, oldest data are substituted for newest data.
Fig. 5 is chart of the temperature with the relation of offset voltage for representing Magnetosensing element 4.With reference to the chart to offset voltage
Adjustment is processed and is illustrated.Transverse axis represents the temperature of Magnetosensing element 4 (by temperature monitoring resistive film 47 and temperature computation portion 93
The testing result for detecting).The longitudinal axis represents the offset voltage of Magnetosensing element 4.
As described above, in 1 course of action of rotary encoder, compensation adjustment portion 94 is by offset voltage and Magnetosensing element 4
Temperature group pair, and it is recorded in storage part 95 successively.For example, in Figure 5, the first～the 4th data D1～D4 represents on chart.
Compensation adjustment portion 94 calculates approximate expression (here, near linear based on the first～the 4th data D1～D4
AL), so as to calculate the temperature characterisitic of offset voltage.Specific as temperature, for example calculate the intercept, tiltedly of near linear AL
Rate.
Then, in the case of the starting of following rotary encoder 1, according to temperature monitoring resistive film 47 and temperature computation
The testing result in portion 93, compensation adjustment portion 94 calculate offset voltage based on temperature characterisitic, after activation at once.Its result
It is can be appropriately calculated offset voltage after activation at once such that it is able to reduce the output error of rotary encoder 1, i.e.,
Angular error.Even if also, offset voltage changes over time, offset voltage temperature characterisitic changes over time, also can
Enough correct successively.That is, by 94 learning compensation voltage temperature characteristic of compensation adjustment portion, can high accuracy, calculate in high sensitivity
The offset voltage gone out after just starting.
In addition, when 95 groups of storage part records the temperature of offset voltage and Magnetosensing element 4 over the ground, it is also possible to model according to the rules
Enclose division temperature range so that the offset voltage detected in temperature range is fifty-fifty stored.Due to the appearance needed for can suppressing
Amount, in the case that therefore the capacity in the storage part 95 that can be utilized has restriction effectively.Also, in other viewpoints, can
During till extending replacement data such that it is able to using long-term data.
Alternatively, it is also possible to detect that offset voltage is inclined near linear AL with the data shown in the temperature of Magnetosensing element 4
In the case of more than setting, compensation adjustment portion 94 is judged as making a mistake, and reset the temperature characterisitic that had both deposited.That is, compensation is adjusted
Whole 94 initialization for being learnt.
For example, as illustrated, wrong data Derror(Dx) be Δ V lower than near linear AL value.In this case, deposit
In, the possibility of the output characteristics change of Magnetosensing element 4 bad in 4 generating device of Magnetosensing element deformation etc..Therefore, such
In the case of, compensation adjustment portion 94 abandons the data that had both deposited, and records the new data for hereafter obtaining, and is used.Also, in frequency
Numerous occur study initialized in the case of, compensation adjustment portion 94 is judged as that rotary encoder 1 breaks down, by specify police
Accuse unit (display unit etc.) and notify the purport.
＜ second embodiment ＞
In the present embodiment, the direct detection Magnetosensing element temperature of itself based on the electric current for flowing through Magnetosensing element (MR element)
Degree, calculates the offset voltage of the temperature.In addition, the structure beyond the temperature measurement technology of Magnetosensing element (MR sub-prime) can be led to
Cross and realize with first embodiment identical structure, function, therefore the feature technology in present embodiment is illustrated, right
In identical structure, functional label same-sign, simultaneously the description thereof will be omitted.
Fig. 6 is the sense magnetic film 41～44 that the Magnetosensing element 4 for magnet sensor arrangement 10 and rotary encoder 1 is described
The figure of the electric connection structure of (magnetoresistive film).Here, representing the bridge circuit 4a of A phase side, become the Fig. 2 in first embodiment
The structure of current detection circuit 150 is added in the structure of (a).
As illustrated, in the path way of the bridge circuit 4a of the power supply terminal VccA and A phase side of A phase, i.e. in a high position
Side is provided with current detection circuit 150.In addition, the structure of the current detection circuit 150 being shown in which is illustrated for ease of explanation
The basic circuit structure of current detecting.In fact, special current detecting IC is usually used, also same in the present embodiment
Sample.Also, be not limited to high-order side, it is also possible to current detecting is carried out in low level side.
Current detection circuit 150 is with current detecting resistance 151 and current detecting amplifier 152.Current detecting is used
Resistance 151 is inserted in series in the path midway of the bridge circuit 4a of the power supply terminal VccA and A phase side of A phase.Here, in sense
In the case that the resistance value of magnetic film 41,43 is 500 Ω～1000 Ω, by current detecting is set with the resistance value of resistance 151
For several 10 Ω, current detecting can be carried out in the way of S/N is not than actually reducing.
Current detecting is connected with two inputs (+/-) of current detecting amplifier 152 with the two ends of resistance 151.And,
The output (Vout) of current detecting amplifier 152 is connected with control unit 90.
Next, temperature detection is processed illustrating.Temperature is realized by the 90 identical structure of control unit with Fig. 4
Detection process.The temperature-coefficient of electrical resistance α of Magnetosensing element 4 and the offset (resistance value at a temperature of certain are recorded in storage part 95
ROMR).Temperature computation portion 93 calculates the resistance of Magnetosensing element 4 based on the electric current that flows through Magnetosensing element 4 and applied voltage
Value RMR, with reference to storage part 95, calculate temperature t of current Magnetosensing element 4.Temperature t of current Magnetosensing element 4 is according to following
Relational expression derive.
RMR=ROMR+α(t-t0)
α：The temperature-coefficient of electrical resistance of Magnetosensing element 4
ROMR：Temperature t in regulation0Under Magnetosensing element 4 resistance value
Here with following situation：Constitute the electricity of each element (feeling magnetic film 41,43) of the resistance bridge in Magnetosensing element 4
Resistance changes because of the applying direction of outside magnetic flux, but by configuring the bridge structure (sense magnetic film 41,43) shown in Fig. 3, whole
Bulk resistor is nearly constant.The element (sense magnetic film 42,44) of B phase side is similarly.Compensation adjustment portion 94 is obtained using the temperature that obtains
The offset voltage of Magnetosensing element 4.In addition, the temperature characterisitic of offset voltage is pre-recorded in storage part 95.
In addition, by arranging current detection circuit 150, and the temperature monitoring resistive film of first embodiment is set
47, Temperature Distribution in magnet sensor arrangement 10, i.e. on substrate 40 is will appreciate that, temperature regime can be calculated exactly.
Also, be built-in with temperature sensor in the CPU for having installed rotary encoder 1, but temperature sensor output be not by school
Positive content.It is thus possible to enough by current detection circuit 150 as internal calibrations temperature sensor.
Described the present invention based on embodiment, but the embodiment is to illustrate, these each compositions will
Combination of element etc. can carry out various modifications, and these variation are also within the scope of the invention, for people in the art
Member will be understood by.
Label declaration
1 rotary encoder
2 rotary bodies
4 Magnetosensing elements
4a, 4b bridge circuit
10 magnet sensor arrangements
20 magnet
21 magnetizing surfaces
31st, 32,35,36 amplifying circuit
40 substrates
41st, 42,43,44 sense magnetic film
45 senses magnetic area (magnet sensing part)
47 temperature monitorings are with resistive film (temperature detecting part)
61 first Hall elements
62 second Hall elements
90 control units
91 ADC portions
92 signal processing parts
93 temperature computation portions (temperature detecting part)
94 compensation adjustment portions
95 storage parts
150 current detection circuits (temperature detecting part)
151 current detecting resistance
152 current detecting amplifiers
Claims (10)
1. a kind of encoder, it is characterised in that have：
Magnetoresistive element, the magnetoresistive element are formed on substrate；
Offset voltage test section, the offset voltage test section detect the offset voltage of the magnetoresistive element；
Temperature detecting part, the temperature detecting part detect the temperature of the magnetoresistive element；
Storage part, the storage part associatedly record the temperature of the offset voltage and the magnetoresistive element；And
Offset voltage specified part, the offset voltage specified part according to be recorded in the offset voltage of the storage part with described
The data of the temperature of magnetoresistive element, calculate the expression offset voltage approximate with the relation of the temperature of the magnetoresistive element
Formula, when starting, according to the offset voltage that the temperature estimation of the magnetoresistive element is current based on the approximate expression, and will push away
The fixed offset voltage is used as new offset voltage.
2. encoder according to claim 1, it is characterised in that
The temperature detecting part is formed on substrate described in the identical of the magnetoresistive element.
3. encoder according to claim 2, it is characterised in that
By the offset voltage and the temperature association of the magnetoresistive element be recorded in the storage part when, temperature range according to
Prescribed limit is split so that the offset voltage detected in the temperature range is average.
4. encoder according to claim 3, it is characterised in that
Deviate ormal weight more than with the relation of the temperature of the magnetoresistive element with the approximate expression in the offset voltage that measures
In the case of, the offset voltage specified part calculates new approximate expression based on new data.
5. encoder according to claim 4, it is characterised in that
The temperature detecting part detects once the temperature of the magnetoresistive element in each communication cycle with outside control device
Degree,
The offset voltage specified part calculates the approximate expression in the communication cycle.
6. encoder according to any one of claim 1 to 5, it is characterised in that
The temperature detecting part calculates the resistance value of the magnetoresistive element, detects current temperature according to the resistance value for calculating
Degree.
7. encoder according to any one of claim 1 to 5, it is characterised in that
The temperature detecting part has temperature monitoring resistive film, and the temperature monitoring resistive film has been formed on the magnetic
On the substrate of resistance element.
8. encoder according to claim 1, it is characterised in that
By the offset voltage and the temperature association of the magnetoresistive element be recorded in the storage part when, temperature range according to
Prescribed limit is split so that the offset voltage detected in the temperature range is average.
9. encoder according to claim 1, it is characterised in that
Deviate ormal weight more than with the relation of the temperature of the magnetoresistive element with the approximate expression in the offset voltage that measures
In the case of, the offset voltage specified part calculates new approximate expression based on new data.
10. encoder according to claim 1, it is characterised in that
The temperature detecting part detects once the temperature of the magnetoresistive element in each communication cycle with outside control device
Degree,
The offset voltage specified part calculates the approximate expression in the communication cycle.
Applications Claiming Priority (2)
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| JP2015-168606 | 2015-08-28 | ||
| JP2015168606A JP6619974B2 (en) | 2015-08-28 | 2015-08-28 | Encoder |
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| JP (1) | JP6619974B2 (en) |
| KR (1) | KR102677085B1 (en) |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109579880A (en) * | 2018-12-26 | 2019-04-05 | 上海英威腾工业技术有限公司 | Magnetic coder with adaptive equalization function |
| WO2024113450A1 (en) * | 2022-12-02 | 2024-06-06 | 赛卓电子科技(上海)股份有限公司 | Magnetic encoder correction method and apparatus, and magnetic encoder |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102103162B1 (en) * | 2018-12-13 | 2020-04-22 | 현대 파워텍 주식회사 | Speed sensor |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2017044625A (en) | 2017-03-02 |
| KR102677085B1 (en) | 2024-06-21 |
| CN106482754B (en) | 2019-03-12 |
| JP6619974B2 (en) | 2019-12-11 |
| TW201708794A (en) | 2017-03-01 |
| TWI688751B (en) | 2020-03-21 |
| KR20170026209A (en) | 2017-03-08 |
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