CN106468483A - A kind of new stacked structure photothermal deformation coating - Google Patents

A kind of new stacked structure photothermal deformation coating Download PDF

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Publication number
CN106468483A
CN106468483A CN201510505085.3A CN201510505085A CN106468483A CN 106468483 A CN106468483 A CN 106468483A CN 201510505085 A CN201510505085 A CN 201510505085A CN 106468483 A CN106468483 A CN 106468483A
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layer
coating
stacked structure
alon
photothermal deformation
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刘晓鹏
孟建平
杜淼
米菁
郝雷
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Beijing General Research Institute for Non Ferrous Metals
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Beijing General Research Institute for Non Ferrous Metals
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/40Solar thermal energy, e.g. solar towers

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  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a kind of new stacked structure photothermal deformation coating, outwards it is made up of metal infrared reflecting layer, resistance diffusion layer, the first absorbed layer, dielectric layer, the second absorbed layer, the first antireflection layer and the second antireflection layer successively from substrate.This coating adopts double layered transition race metal nitride or nitrogen oxides as absorbed layer, and the nitride that formed using transition metal and Al or Si or nitrogen oxides cermet coating are as the resistance diffusion layer between infrared reflecting layer and absorbed layer;Absorbance α=0.93~0.96 of this coating, emissivity ε≤0.06 (82 DEG C), ε≤0.12 (400 DEG C).The new stacked structure photothermal deformation coating of the present invention has that absorbance is high, and emissivity is low, antioxygenic property and resistance to elevated temperatures excellent it is adaptable to trough type solar power generation vacuum heat collection pipe and flat plate collector.

Description

A kind of new stacked structure photothermal deformation coating
Technical field
The present invention relates to a kind of new stacked structure photothermal deformation coating, this coating can be used for vacuum heat collection pipe and flat board Heat collector, belongs to solar energy heat utilization field of material technology.
Background technology
Solar selectively absorbing coating can improve the photo-thermal conversion efficiency of heat collector in Solar Energy Heat Utilization System. It is divided into using temperature range according to coating:Low temperature using (≤100 DEG C), middle temperature utilization (100~400 DEG C), High temperature utilizes (>=400 DEG C).At present, the low temperature of solar energy utilizes relatively broad, such as solar water heater etc., and The high temperature of solar energy utilizes less.
As solar selectively absorbing coating, need to have high absorbance, low emissivity and high thermally-stabilised Property, for high temperature application coating, coatings emissivity and heat stability are more important, because the heat radiation of material and temperature 4 powers of degree (T) are directly proportional, and the heat stability of coating also determines coating service temperature and life-span.At present, The coating system of high temperature application mainly includes metal-dielectric and stacks coating and metal-cermic coating, wherein metal-electricity Medium stacks coating to be had the advantages such as the low, process is simple of emissivity and obtains and be widely applied.The metal applied at first - electrolyte stacks the Al that coating is Schmidt and Park exploitation2O3/Mo/Al2O3Coating, this coating is referred to as AMA structure.Based on AMA structure, the metal-dielectric coatings being made up of different metal and electrolyte constantly quilt Develop.Metal material has Mo, W, Al, Hf, Ni etc., and dielectric substance has Al2O3、HfO2、SiO2、 AlN etc., but metal-dielectric stack coating under arms during, especially under the high temperature conditions the oxidation of metal and The problems such as diffusion, is notable.
Content of the invention
Stack the problem of metal oxidation and diffusion in coating for above metal-dielectric, it is an object of the invention to carrying For a kind of new stacked structure photothermal deformation coating, this coating has absorbance height, and emissivity is low, antioxygenic property Excellent with resistance to elevated temperatures it is adaptable to trough type solar power generation vacuum heat collection pipe and flat plate collector.
For achieving the above object, the present invention employs the following technical solutions:
A kind of new stacked structure photothermal deformation coating, from substrate outwards successively by metal infrared reflecting layer, resistance diffusion Layer, the first absorbed layer, dielectric layer, the second absorbed layer, the first antireflection layer and the second antireflection layer are constituted.
Wherein, described metal infrared reflecting layer is made up of one of W, Mo, Cu, Al, Ag and Ni, should The thickness of metal infrared reflecting layer is 50-300nm.
By transition metal, the nitride being formed or nitrogen oxides are constituted described resistance diffusion layer with Al or Si.
Described first absorbed layer and the second absorbed layer are respectively by one of magnesium-yttrium-transition metal nitride or nitrogen oxides Constitute, thickness is 3-30nm.Described transition metal is Ti, Zr, Hf, Cr, Mo, W, V, Nb or Ta.
Described dielectric layer is by Si3N4、SiON、SiO2, AlN, AlON and Al2O3One of constitute, its Thickness is 20-100nm.
The refractive index of described ground floor antireflection layer is more than the refractive index of second layer antireflection layer, two-layer antireflection layer Gross thickness is 50-100nm.Being combined as of described first antireflection layer and the second antireflection layer:Si3N4+SiON、 Si3N4+SiO2、Si3N4+AlON、Si3N4+Al2O3、SiON+SiO2、SiON+AlON、SiON+Al2O3、 AlN+AlON、AlN+Al2O3、AlN+SiON、AlN+SiO2、AlON+SiON、AlON+Al2O3With AlON+SiO2One of.
The new stacked structure photothermal deformation coating of the present invention is prepared from using physical gas-phase deposite method, by adjusting Whole target species, sputtering power, argon-nitrogen-oxygen flow and sedimentation time control composition and the thickness of each layer.
It is an advantage of the current invention that:
The new stacked structure photothermal deformation coating of the present invention adopts double layered transition race metal nitride or nitrogen oxides As absorbed layer, and the nitride using transition metal and Al or Si formation or nitrogen oxides cermet coating conduct Diffusion layer between infrared reflecting layer and absorbed layer;Absorbance α=0.93~0.96 of this coating, launches resistance rate ε≤0.05 (82 DEG C), ε≤0.12 (400 DEG C).
The new stacked structure photothermal deformation coating of the present invention has that absorbance is high, and emissivity is low, antioxygenic property and Resistance to elevated temperatures excellent it is adaptable to trough type solar power generation vacuum heat collection pipe and flat plate collector.
Brief description
Fig. 1 is the structural representation of the new stacked structure photothermal deformation coating of the present invention.
Fig. 2 is the reflectance curve of the coating of embodiment 1 preparation.
Fig. 3 is the reflectance curve of the coating of embodiment 2 preparation.
Fig. 4 is the reflectance curve of the coating of embodiment 3 preparation.
Fig. 5 is the reflectance curve of the coating of embodiment 4 preparation.
Fig. 6 is the reflectance curve of the coating of embodiment 5 preparation.
Specific embodiment
Below by way of specific embodiment, the present invention will be further described, but is not used in the restriction present invention.
As shown in figure 1, the new stacked structure photothermal deformation coating of the present invention is outwards infrared by metal successively from substrate Reflecting layer 1, resistance diffusion layer 2, the first absorbed layer 3, dielectric layer 4, the second absorbed layer 5, the first antireflection layer 6 and second antireflection layer 7 constitute.
The new stacked structure photothermal deformation coating of the present invention is prepared from using physical gas-phase deposite method, by adjusting Whole target species, sputtering power, the flow of argon-nitrogen-oxygen and sedimentation time are controlling composition and the thickness of each layer Degree, specifically includes following steps:
(1) base material is cleaned by ultrasonic after drying and puts into vacuum chamber, surface is cleaned by argon ion etching again.
(2) design according to coating, deposit corresponding metal infrared reflecting layer.
(3) deposition resistance diffusion layer, resistance diffusion layer by transition metal (Ti, Zr, Hf, Cr, Mo, W, V, Nb, Ta) constitute with the nitride of Al or Si formation or nitrogen oxides cermet coating.
(4) deposit the first absorbed layer, this absorbed layer be magnesium-yttrium-transition metal (Ti, Zr, Hf, Cr, Mo, W, V, Nb, Ta) one of nitride or nitrogen oxides.
(5) deposit dielectrics layer, dielectric layer is Si3N4、SiON、SiO2, AlN, AlON and Al2O3 One of.
(6) deposit the second absorbed layer, this absorbed layer be magnesium-yttrium-transition metal (Ti, Zr, Hf, Cr, Mo, W, V, Nb, Ta) one of nitride or nitrogen oxides.
(7) double antireflection layers are deposited, this pair of antireflection layer is combination S i3N4+SiON、Si3N4+SiO2、 Si3N4+AlON、Si3N4+Al2O3、SiON+SiO2、SiON+AlON、SiON+Al2O3、AlN+AlON、 AlN+Al2O3、AlN+SiON、AlN+SiO2、AlON+SiON、AlON+Al2O3And AlON+SiO2In One kind.
Embodiment 1
Taking Cu/ZrAlN/ZrN/AlN/ZrN/AlN/AiON coating as a example, it is passed through argon sputter copper target in coater and sinks Long-pending infrared reflecting layer, thickness 100nm.Logical argon and nitrogen, are respectively adopted zirconium target and the resistance of aluminum target response sputtering sedimentation Diffusion layer ZrAlN, thickness is 80nm.In the atmosphere of argon and nitrogen, using zirconium target response sputtering sedimentation One absorbed layer ZrN, thickness 25nm.In the atmosphere of argon and nitrogen, it is situated between using aluminum target response sputtering sedimentation electricity Matter layer AlN, thickness is 50nm.In the atmosphere of argon and nitrogen, inhaled using zirconium target response sputtering sedimentation second Receive layer ZrN, thickness is 30nm.In the atmosphere of argon and nitrogen, subtracted using aluminum target response sputtering sedimentation first Reflecting layer AlN, thickness is 50nm.Logical argon, nitrogen and oxygen, are subtracted using aluminum target response sputtering sedimentation second Reflecting layer AlON, thickness is 20nm.The reflectance curve of prepared coating is as shown in Figure 2.
Absorbance α=0.95 of prepared coating, emissivity is ε≤0.05 (82 DEG C), ε≤0.10 (400 DEG C).
Embodiment 2
With Ni/TiSiN/TiN/Si3N4/TiN/Si3N4/SiO2As a example coating, coater is passed through argon, argon ion Bombardment nickel target deposited metal infrared reflecting layer, thickness is 100nm.Logical argon and nitrogen, anti-using titanium target and silicon target Answer sputtering sedimentation resistance diffusion layer TiSiN, thickness is 50nm.In the atmosphere of argon and nitrogen, using titanium target reaction Sputtering sedimentation the first absorbed layer TiN, thickness is 18nm.In the atmosphere of argon and nitrogen, using silicon target reaction Sputtering sedimentation dielectric layer Si3N4, thickness is 40nm.In the atmosphere of argon and nitrogen, splashed using titanium target reaction Penetrate deposition the second absorbed layer TiN, thickness is 20nm.In the atmosphere of argon and nitrogen, splashed using silicon target reaction Penetrate deposition the first antireflection layer Si3N4, thickness is 60nm.Logical argon and oxygen, using silicon target reactive sputter-deposition Second antireflection layer SiO2, thickness is 30nm.The reflectance curve of prepared coating is as shown in Figure 3.
Absorbance α=0.94 of prepared coating, emissivity is ε≤0.06 (82 DEG C), ε≤0.11 (400 DEG C).
Embodiment 3
With Mo/TiAiON/TiON/AlON/TiN/AlON/Al2O3As a example coating, in coater, it is passed through argon, Argon ion bombardment molybdenum target deposited metal infrared reflecting layer, thickness is 80nm.Logical argon, nitrogen and oxygen, adopt Titanium target and aluminum target response sputtering sedimentation resistance diffusion layer TiAlON, thickness is 70nm.In argon, nitrogen and oxygen In atmosphere, using titanium target reactive sputter-deposition the first absorbed layer TiON, thickness is 20nm.Argon, nitrogen and In the atmosphere of oxygen, using aluminum target response sputtering sedimentation dielectric layer AlON, thickness is 40nm.In argon and nitrogen In the atmosphere of gas, using titanium target reactive sputter-deposition the second absorbed layer TiN, thickness is 30nm.In argon, nitrogen In the atmosphere of gas and oxygen, using aluminum target response sputtering sedimentation the first antireflection layer AlON, thickness is 45nm.Logical Argon and oxygen, using aluminum target response sputtering sedimentation the second antireflection layer Al2O3, thickness is 30nm.Prepared The reflectance curve of coating is as shown in Figure 4.
Absorbance α=0.94 of prepared coating, emissivity is ε≤0.06 (82 DEG C), ε≤0.12 (400 DEG C).
Embodiment 4
With W/WSiON/WON/SiON/WON/SiON/SiO2As a example coating, coater is passed through argon, argon Ion bom bardment tungsten target deposited metal infrared reflecting layer, thickness is 110nm.Logical argon, nitrogen and oxygen, using tungsten Target and silicon target reactive sputter-deposition resistance diffusion layer WSiON, thickness is 60nm.Gas in argon, nitrogen and oxygen In atmosphere, using tungsten target reactive sputter-deposition the first absorbed layer WON, thickness is 15nm.In argon, nitrogen and oxygen In the atmosphere of gas, using silicon target reactive sputter-deposition dielectric layer SiON, thickness is 60nm.In argon, nitrogen In the atmosphere of oxygen, using tungsten target reactive deposition the second absorbed layer WON, thickness is 25nm.In argon, nitrogen In the atmosphere of gas and oxygen, using silicon target reactive sputter-deposition the first antireflection layer SiON, thickness is 60nm.Logical Argon and oxygen, using silicon target reactive sputter-deposition the second antireflection layer SiO2, thickness is 30nm.Obtained Coating reflectivity curve is as shown in Figure 5.
Absorbance α=0.94 of prepared coating, emissivity is ε≤0.06 (82 DEG C), ε≤0.12 (400 DEG C).
Embodiment 5
With Mo/NbAlON/NbON/Al2O3/NbON/AlON/Al2O3As a example coating, coater is passed through argon Gas, argon ion bombardment molybdenum target deposited metal infrared reflecting layer, thickness is 100nm.Logical argon, nitrogen and oxygen, Diffusion layer NbAlON is hindered using niobium target and aluminum target response sputtering sedimentation, thickness is 50nm.Argon, nitrogen and In the atmosphere of oxygen, using niobium target response sputtering sedimentation NbON, thickness is 18nm.Gas in argon and oxygen In atmosphere, using aluminum target response sputtering sedimentation Al2O3, thickness is 40nm.In the atmosphere of argon, nitrogen and oxygen, NbON is deposited using niobium target response, thickness is 20nm.In the atmosphere of argon, nitrogen and oxygen, using aluminum Target response sputtering sedimentation AlON, thickness is 50nm.Logical argon and oxygen, using aluminum target response sputtering sedimentation Al2O3, Thickness is 35nm.The reflectance curve of prepared coating is as shown in Figure 6.
Absorbance α=0.94 of prepared coating, emissivity is ε≤0.06 (82 DEG C), ε≤0.12 (400 DEG C).

Claims (8)

1. a kind of new stacked structure photothermal deformation coating is it is characterised in that from substrate outwards successively by metallic red Outer reflective layer, resistance diffusion layer, the first absorbed layer, dielectric layer, the second absorbed layer, the first antireflection layer and second Antireflection layer is constituted.
2. new stacked structure photothermal deformation coating according to claim 1 is it is characterised in that described gold Belong to infrared reflecting layer to be made up of one of W, Mo, Cu, Al, Ag and Ni.
3. new stacked structure photothermal deformation coating according to claim 1 is it is characterised in that described resistance By transition metal, the nitride being formed or nitrogen oxides are constituted diffusion layer with Al or Si.
4. new stacked structure photothermal deformation coating according to claim 1 is it is characterised in that described One absorbed layer and the second absorbed layer are made up of one of magnesium-yttrium-transition metal nitride or nitrogen oxides respectively.
5. the new stacked structure photothermal deformation coating according to claim 3 or 4 is it is characterised in that institute Stating transition metal is Ti, Zr, Hf, Cr, Mo, W, V, Nb or Ta.
6. new stacked structure photothermal deformation coating according to claim 1 is it is characterised in that described electricity Dielectric layer is by Si3N4、SiON、SiO2, AlN, AlON and Al2O3One of constitute.
7. new stacked structure photothermal deformation coating according to claim 1 is it is characterised in that described The refractive index of one layer of antireflection layer is more than the refractive index of second layer antireflection layer.
8. new stacked structure photothermal deformation coating according to claim 7 is it is characterised in that described Being combined as of one antireflection layer and the second antireflection layer:Si3N4+SiON、Si3N4+SiO2、Si3N4+AlON、 Si3N4+Al2O3、SiON+SiO2、SiON+AlON、SiON+Al2O3、AlN+AlON、AlN+Al2O3、 AlN+SiON、AlN+SiO2、AlON+SiON、AlON+Al2O3And AlON+SiO2One of.
CN201510505085.3A 2015-08-17 2015-08-17 A kind of new stacked structure photothermal deformation coating Pending CN106468483A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108645062A (en) * 2018-04-18 2018-10-12 华中科技大学 A kind of solar energy heating film
CN109883073A (en) * 2019-03-13 2019-06-14 哈尔滨工业大学(深圳) A kind of quasi-optics micro-cavity structure coating for selective absorption of sunlight spectrum of high-temperature stable and preparation method thereof
CN110806028A (en) * 2019-10-30 2020-02-18 合肥埃能捷节能科技有限公司 Solar selective heat absorption coating
CN110895058A (en) * 2018-09-13 2020-03-20 康楚钒 Novel high-temperature solar selective absorption coating

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CN1210237A (en) * 1997-09-02 1999-03-10 郑慧敏 Selective solar energy absorbing coating
CN102122006A (en) * 2010-08-05 2011-07-13 北京有色金属研究总院 Solar spectrum selective absorbing coating and preparation method thereof
CN102816992A (en) * 2012-08-10 2012-12-12 湖北桑夏太阳能产业有限公司 Solar selective absorbing coating and preparation method thereof
WO2013044975A1 (en) * 2011-09-30 2013-04-04 Siemens Aktiengesellschaft Glas tube with infrared light reflective coating, method for manufacturing the glass tube, heat receiver tube with the glass tube, parabolic trough collector with the heat receiver tube and use of the parabolic trough collector
CN103234294A (en) * 2013-04-27 2013-08-07 江苏夏博士节能工程股份有限公司 Film system structure of moderate and high temperature solar energy selective absorption coating and production method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1210237A (en) * 1997-09-02 1999-03-10 郑慧敏 Selective solar energy absorbing coating
CN102122006A (en) * 2010-08-05 2011-07-13 北京有色金属研究总院 Solar spectrum selective absorbing coating and preparation method thereof
WO2013044975A1 (en) * 2011-09-30 2013-04-04 Siemens Aktiengesellschaft Glas tube with infrared light reflective coating, method for manufacturing the glass tube, heat receiver tube with the glass tube, parabolic trough collector with the heat receiver tube and use of the parabolic trough collector
CN102816992A (en) * 2012-08-10 2012-12-12 湖北桑夏太阳能产业有限公司 Solar selective absorbing coating and preparation method thereof
CN103234294A (en) * 2013-04-27 2013-08-07 江苏夏博士节能工程股份有限公司 Film system structure of moderate and high temperature solar energy selective absorption coating and production method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108645062A (en) * 2018-04-18 2018-10-12 华中科技大学 A kind of solar energy heating film
CN108645062B (en) * 2018-04-18 2019-11-05 华中科技大学 A kind of solar energy heating film
CN110895058A (en) * 2018-09-13 2020-03-20 康楚钒 Novel high-temperature solar selective absorption coating
CN109883073A (en) * 2019-03-13 2019-06-14 哈尔滨工业大学(深圳) A kind of quasi-optics micro-cavity structure coating for selective absorption of sunlight spectrum of high-temperature stable and preparation method thereof
CN110806028A (en) * 2019-10-30 2020-02-18 合肥埃能捷节能科技有限公司 Solar selective heat absorption coating
CN110806028B (en) * 2019-10-30 2021-08-31 合肥埃能捷节能科技有限公司 Solar selective heat absorption coating

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Application publication date: 20170301