CN106459448B - Stretched film - Google Patents
Stretched film Download PDFInfo
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- CN106459448B CN106459448B CN201580034033.0A CN201580034033A CN106459448B CN 106459448 B CN106459448 B CN 106459448B CN 201580034033 A CN201580034033 A CN 201580034033A CN 106459448 B CN106459448 B CN 106459448B
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- Prior art keywords
- particle
- stretched film
- mass
- resin
- film
- Prior art date
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- 239000002245 particle Substances 0.000 claims abstract description 190
- 229920005989 resin Polymers 0.000 claims abstract description 168
- 239000011347 resin Substances 0.000 claims abstract description 168
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 150
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 69
- 239000011856 silicon-based particle Substances 0.000 claims abstract description 41
- 229920002545 silicone oil Polymers 0.000 claims abstract description 33
- 239000003990 capacitor Substances 0.000 claims abstract description 27
- 239000003963 antioxidant agent Substances 0.000 claims description 50
- 230000003078 antioxidant effect Effects 0.000 claims description 48
- 229920000642 polymer Polymers 0.000 claims description 22
- 229920005990 polystyrene resin Polymers 0.000 claims description 20
- 239000000126 substance Substances 0.000 claims description 17
- 239000008187 granular material Substances 0.000 claims description 13
- 230000006835 compression Effects 0.000 claims description 11
- 238000007906 compression Methods 0.000 claims description 11
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 10
- 230000004523 agglutinating effect Effects 0.000 claims description 8
- 238000000197 pyrolysis Methods 0.000 claims description 7
- 150000001336 alkenes Chemical class 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 207
- 230000015556 catabolic process Effects 0.000 abstract description 54
- 238000007790 scraping Methods 0.000 abstract description 24
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 abstract description 15
- 239000006185 dispersion Substances 0.000 abstract description 15
- 239000010409 thin film Substances 0.000 abstract description 15
- 235000006708 antioxidants Nutrition 0.000 description 48
- 238000000034 method Methods 0.000 description 48
- 230000000694 effects Effects 0.000 description 30
- 238000002844 melting Methods 0.000 description 30
- 230000008018 melting Effects 0.000 description 30
- 239000010410 layer Substances 0.000 description 29
- -1 poly- 2,6-naphthalenedicarboxylic acid glycol ester Chemical class 0.000 description 29
- 230000006872 improvement Effects 0.000 description 26
- 238000002156 mixing Methods 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 21
- 239000004721 Polyphenylene oxide Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 19
- 239000007789 gas Substances 0.000 description 16
- 229920006380 polyphenylene oxide Polymers 0.000 description 16
- 238000005259 measurement Methods 0.000 description 15
- 238000001125 extrusion Methods 0.000 description 13
- 230000009467 reduction Effects 0.000 description 13
- 229920002223 polystyrene Polymers 0.000 description 12
- 239000004793 Polystyrene Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000011247 coating layer Substances 0.000 description 10
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 239000000843 powder Substances 0.000 description 10
- 230000003746 surface roughness Effects 0.000 description 10
- 239000004594 Masterbatch (MB) Substances 0.000 description 9
- 238000004898 kneading Methods 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- 238000004804 winding Methods 0.000 description 9
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 8
- 230000009477 glass transition Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000012634 fragment Substances 0.000 description 7
- 230000002452 interceptive effect Effects 0.000 description 7
- 230000036961 partial effect Effects 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- BGYHLZZASRKEJE-UHFFFAOYSA-N [3-[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxy]-2,2-bis[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxymethyl]propyl] 3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoate Chemical compound CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CCC(=O)OCC(COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)(COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)=C1 BGYHLZZASRKEJE-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 6
- 239000004615 ingredient Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 238000007493 shaping process Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229960001866 silicon dioxide Drugs 0.000 description 6
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 5
- 229910052791 calcium Inorganic materials 0.000 description 5
- 239000011575 calcium Substances 0.000 description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 239000003381 stabilizer Substances 0.000 description 4
- 150000003440 styrenes Chemical class 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 238000005160 1H NMR spectroscopy Methods 0.000 description 3
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- OKOBUGCCXMIKDM-UHFFFAOYSA-N Irganox 1098 Chemical compound CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CCC(=O)NCCCCCCNC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)=C1 OKOBUGCCXMIKDM-UHFFFAOYSA-N 0.000 description 3
- 239000004724 Iupiace Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000004520 agglutination Effects 0.000 description 3
- 239000005030 aluminium foil Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 235000013399 edible fruits Nutrition 0.000 description 3
- 229920006351 engineering plastic Polymers 0.000 description 3
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 210000004379 membrane Anatomy 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229920006389 polyphenyl polymer Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000010010 raising Methods 0.000 description 3
- 125000005372 silanol group Chemical group 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 230000002195 synergetic effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229920001169 thermoplastic Polymers 0.000 description 3
- 239000004416 thermosoftening plastic Substances 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- SSMSBSWKLKKXGG-UHFFFAOYSA-N 1-(2-chlorophenyl)-2-isopropylaminoethanol Chemical compound CC(C)NCC(O)C1=CC=CC=C1Cl SSMSBSWKLKKXGG-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229920006387 Vinylite Polymers 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 206010000496 acne Diseases 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 210000002469 basement membrane Anatomy 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229920000402 bisphenol A polycarbonate polymer Polymers 0.000 description 2
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000007766 curtain coating Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 238000000113 differential scanning calorimetry Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 239000000017 hydrogel Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Substances OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000002530 phenolic antioxidant Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920001608 poly(methyl styrenes) Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- QLNJFJADRCOGBJ-UHFFFAOYSA-N propionamide Chemical compound CCC(N)=O QLNJFJADRCOGBJ-UHFFFAOYSA-N 0.000 description 2
- 229940080818 propionamide Drugs 0.000 description 2
- 230000001141 propulsive effect Effects 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000012798 spherical particle Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000001502 supplementing effect Effects 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- BOVQCIDBZXNFEJ-UHFFFAOYSA-N 1-chloro-3-ethenylbenzene Chemical compound ClC1=CC=CC(C=C)=C1 BOVQCIDBZXNFEJ-UHFFFAOYSA-N 0.000 description 1
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical compound CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 1
- QEDJMOONZLUIMC-UHFFFAOYSA-N 1-tert-butyl-4-ethenylbenzene Chemical compound CC(C)(C)C1=CC=C(C=C)C=C1 QEDJMOONZLUIMC-UHFFFAOYSA-N 0.000 description 1
- CTHJQRHPNQEPAB-UHFFFAOYSA-N 2-methoxyethenylbenzene Chemical compound COC=CC1=CC=CC=C1 CTHJQRHPNQEPAB-UHFFFAOYSA-N 0.000 description 1
- HCILJBJJZALOAL-UHFFFAOYSA-N 3-(3,5-ditert-butyl-4-hydroxyphenyl)-n'-[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyl]propanehydrazide Chemical compound CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CCC(=O)NNC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)=C1 HCILJBJJZALOAL-UHFFFAOYSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- OMIHGPLIXGGMJB-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]hepta-1,3,5-triene Chemical compound C1=CC=C2OC2=C1 OMIHGPLIXGGMJB-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- RWGSAMLIJGTMCH-UHFFFAOYSA-N C1(=CC=CC=C1)OCC.C=C Chemical group C1(=CC=CC=C1)OCC.C=C RWGSAMLIJGTMCH-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 238000010485 C−C bond formation reaction Methods 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- JSLMNNPQKHONFW-UHFFFAOYSA-N benzene naphthalene-1-carboxylic acid Chemical compound C1(=CC=CC2=CC=CC=C12)C(=O)O.C1=CC=CC=C1 JSLMNNPQKHONFW-UHFFFAOYSA-N 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- MPMBRWOOISTHJV-UHFFFAOYSA-N but-1-enylbenzene Chemical compound CCC=CC1=CC=CC=C1 MPMBRWOOISTHJV-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 229910052620 chrysotile Inorganic materials 0.000 description 1
- 239000002734 clay mineral Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011246 composite particle Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012669 compression test Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- URCAYJXJXYLGTI-UHFFFAOYSA-N ethene fluorobenzene Chemical compound C=C.FC1=CC=CC=C1 URCAYJXJXYLGTI-UHFFFAOYSA-N 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 239000010881 fly ash Substances 0.000 description 1
- 210000001650 focal adhesion Anatomy 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- KETWBQOXTBGBBN-UHFFFAOYSA-N hex-1-enylbenzene Chemical compound CCCCC=CC1=CC=CC=C1 KETWBQOXTBGBBN-UHFFFAOYSA-N 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- LAQFLZHBVPULPL-UHFFFAOYSA-N methyl(phenyl)silicon Chemical compound C[Si]C1=CC=CC=C1 LAQFLZHBVPULPL-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000005311 nuclear magnetism Effects 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 239000005026 oriented polypropylene Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- KHMYONNPZWOTKW-UHFFFAOYSA-N pent-1-enylbenzene Chemical compound CCCC=CC1=CC=CC=C1 KHMYONNPZWOTKW-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001596 poly (chlorostyrenes) Polymers 0.000 description 1
- 229920003197 poly( p-chlorostyrene) Polymers 0.000 description 1
- 229920001627 poly(4-methyl styrene) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000012508 resin bead Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- MGLWZSOBALDPEK-UHFFFAOYSA-N simetryn Chemical compound CCNC1=NC(NCC)=NC(SC)=N1 MGLWZSOBALDPEK-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229920006302 stretch film Polymers 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229920005792 styrene-acrylic resin Polymers 0.000 description 1
- 125000004646 sulfenyl group Chemical group S(*)* 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- CWBIFDGMOSWLRQ-UHFFFAOYSA-N trimagnesium;hydroxy(trioxido)silane;hydrate Chemical compound O.[Mg+2].[Mg+2].[Mg+2].O[Si]([O-])([O-])[O-].O[Si]([O-])([O-])[O-] CWBIFDGMOSWLRQ-UHFFFAOYSA-N 0.000 description 1
- KOZCZZVUFDCZGG-UHFFFAOYSA-N vinyl benzoate Chemical compound C=COC(=O)C1=CC=CC=C1 KOZCZZVUFDCZGG-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
- C08L25/02—Homopolymers or copolymers of hydrocarbons
- C08L25/04—Homopolymers or copolymers of styrene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
- C08L71/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
- C08L71/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
- C08L71/12—Polyphenylene oxides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The present invention provides the alignment films of the windability and excellent styrene-based resin of resistance to scraping or particle dispersion is excellent, operability, resistance to scraping, dielectric breakdown excellent, the stretched film particularly suitable for thin film capacitor such as windability.I.e., stretched film is provided, the stretched film includes resin combination, the porous particle that the resin combination contains the styrenic of syndiotactic structure and average grain diameter is 0.5 ~ 5.0 μm, on the basis of the quality of the resin combination, the content of porous particle is 0.01 mass % or more and 3 mass % ranges below, the stretched film meets any one of following (1) or (2): (1) resin combination contains silicone oil, on the basis of the quality of the porous particle, the content of silicone oil is the range of 0.1 ~ 3 mass %;Or (2) porous particle be average grain diameter A be 0.5 ~ 5 μm, DBA value is 200 mMs/kg porous silica silicon particle below.
Description
Technical field
First the present invention relates to comprising rule (syndiotactic) structure styrenic an alignment films, into one
Step specifically, is related to the stretched film for the styrenic comprising syndiotactic structure that windability and scratch is improved.
The stretching of second resin combination improved the present invention relates to the dispersibility comprising porous silica silicon particle
Film.Further specifically, it is related to operability, resistance to scraping (resistance to cut れ), the medium such as windability comprising resin combination to hit
Wear stretched film that characteristic is improved, particularly suitable for thin film capacitor, in the resin combination, porous silica
Dispersibility of the grain in the polystyrene resin of syndiotactic structure is improved.
Background technique
In the past, thin film capacitor manufactured by the following method: by biaxial orientation polyethylene glycol terephthalate's film, double
The metallic films such as the films such as axis oriented polypropylene films and aluminium foil are Chong Die, and are wound or the method for lamination.In recent years, with
The requirement of circuit or electronic circuit miniaturization, the miniaturization of thin film capacitor, assemblingization also developing, in addition to electrical characteristic with
It is outer also to require heat resistance in turn.In addition, not only using in driver's cabin in mobile applications, use scope, which is also extend to, starts
In machine room, other than electrical characteristic, the thin film capacitor for the environment being suitble under high humidity at higher temperature is also required.
For above-mentioned requirements, Japanese Unexamined Patent Publication H02-143851 bulletin, Japanese Unexamined Patent Publication H03-124750 bulletin, Japan are special
It opens H05-200858 bulletin, propose using heat resistance and electrical characteristic in No. 2008/156210 pamphlet of International Publication No.
The method of excellent styrene-based film.But difficulty is film-made compared with the polyester film used in the past, and film
It is easy to crack, therefore also require treatability when improveing manufacture capacitor.As such improvement film formation property, the method for treatability, lead to
Often cooperate powder stuffing into resin, but conventionally used powder stuffing is when being made film for styrene-based resin,
It is difficult to take into account windability and resistance to scraping.
In addition, being directed to above-mentioned requirements, proposed in Japanese Unexamined Patent Publication 2000-173855 bulletin using heat resistance than poly- to benzene
Naphthalate film or the superior poly- 2,6-naphthalenedicarboxylic acid glycol ester film of polypropylene film, control its crystalloid
State, inherent viscosity etc. are come the method that improves electrical characteristic.But since poly- 2,6-naphthalenedicarboxylic acid glycol ester is polar polymeric
Object, therefore the improvement of electrical characteristic is limited.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication H02-143851 bulletin
Patent document 2: Japanese Unexamined Patent Publication H03-124750 bulletin
Patent document 3: Japanese Unexamined Patent Publication H05-200858 bulletin
Patent document 4: No. 2008/156210 pamphlet of International Publication No.
Patent document 5: Japanese Unexamined Patent Publication 2000-173855 bulletin.
Summary of the invention
Problems to be solved by the invention
First the present invention is completed in view of the aforementioned technical background completes, and its purpose is to provide windability and resistance to scraping is excellent
Styrene-based resin stretched film.
Second the present invention is completed in view of the aforementioned technical background, and its purpose is to provide the polyphenyl second in syndiotactic structure
Particle dispersion in alkene system resin is excellent, the operability such as windability, resistance to scraping, dielectric breakdown characteristic (dielectric breakdown voltage, its
Deviation) it is excellent, can be particularly suitable for the stretched film of thin film capacitor.
It should be noted that stretched film of the invention is properly termed as making the alignment films of molecular chain orientation by stretching, exist below
Alignment films are otherwise referred to as in first present invention.
The solution to the problem
The present inventor to achieve the goals above has made intensive studies various inert particles.In research, to energy
Enough the porous particle of the generations of voids such as polyester is inhibited also to be studied, but styrene-based resin is unable to get
The same effect with polyester film etc..However, it is surprising that the inventors discovered that by porous particle and silicone oil and after using,
It is able to solve the above problem, so as to complete first present invention.
As a result, according to first present invention, a kind of stretched film (being known as alignment films in first present invention below), the drawing are provided
Stretching film includes resin combination, which contains the styrenic of syndiotactic structure, average grain diameter is 0.5 ~ 5.0
μm porous particle and silicone oil, wherein on the basis of the quality of the resin combination, the content of porous particle is 0.01 matter
% or more and 3 mass % ranges below are measured, on the basis of the quality of the porous particle, the content of silicone oil is the model of 0.1 ~ 3 mass %
It encloses.
In addition, the present inventor has made intensive studies to achieve the goals above, as a result, it has been found that, there will be particular surface special
Property porous silica silicon particle cooperate in the polystyrene resin of syndiotactic structure made of resin combination can be easy
The gap that ground obtains the dispersed excellent of the particle and generates when forming stretched film with matrix resin dilution as needed
It is small, as thin film capacitor used time operability, dielectric breakdown characteristic, resistance to scraping etc. also good stretched film, so as to complete
Two present invention.
As a result, according to second present invention, a kind of stretched film is provided, which includes resin combination, the resin combination
The polystyrene resin and average grain diameter A that object contains syndiotactic structure are 0.5 ~ 5 μm, DBA value is 200 mMs/kg or less
Porous silica silicon particle, wherein on the basis of resin combination amount of substance, the content of the porous silica silicon particle is 0.01
Quality % or more and 3 mass % or less.
As described above, according to the present invention, providing above-mentioned first present invention and second present invention.Specifically, providing one kind
Stretched film, which is characterized in that the stretched film includes resin combination, and the polystyrene which contains syndiotactic structure is poly-
Object and average grain diameter are closed as 0.5 ~ 5.0 μm of porous particle, on the basis of the quality of the resin combination, the content of porous particle
For 0.01 mass % or more and 3 mass % ranges below, the stretched film meet any one of following (1), (2):
(1) resin combination contains silicone oil, and on the basis of the quality of the porous particle, the content of silicone oil is 0.1 ~ 3 mass %
Range;Or
(2) porous particle be average grain diameter A be 0.5 ~ 5 μm, DBA value is 200 mMs/kg porous silica below
Particle.
The effect of invention
First stretched film of the invention is in the polystyrene with syndiotactic structure using electrical characteristic and excellent heat resistance
While based polymer, additionally it is possible to resulting alignment films be made to have the windability and resistance to scraping of height.
In addition, the orientation that dielectric breakdown voltage is high and its standard deviation is small can also be obtained according to first present invention
Film can also be suitable as the basement membrane (base film) of the thin film capacitor of very thin and difficult operation.
Second stretched film of the invention, in the polystyrene resin of the syndiotactic structure of heat resistance and excellent electrical characteristic
The porous silica silicon particle with specified particle diameter and particular surface property containing specific quantity, therefore the dispersed pole of the particle
It is good, and the gap generated by the particle is small, and operability, dielectric breakdown characteristic, resistance to scraping are excellent, particularly suitable as film
Capacitor is used.
Specific embodiment
Firstly, being illustrated to the first alignment films of the invention.
Alignment films of the invention include resin combination, which contains the polystyrene polymerization of syndiotactic structure
Object, the porous particle and silicone oil that average grain diameter is 0.5 ~ 5.0 μm.
Polystyrene resin (hereinafter sometimes referred to " the syndiotactic polytyrene tree with syndiotactic structure in the present invention
Rouge " or " SPS ") be the resin with following stereochemical structure: the benzene relative to the main chain by carbon-carbon bond formation, as side chain
Base, substituted-phenyl are alternately located in opposite direction.Usual steric regularity (tacticity) is total by the nuclear-magnetism using isotope carbon
Vibration method (13C-NMR method) it is quantified.Specifically, can with continuous multiple structural units there are ratios to indicate, such as
There are, with the expression of two unit groups (diad), there are, with the expression of three unit groups (triad), there are single with five at 5 at 3 at 2
Tuple (pentad) indicates.The polystyrene resin of syndiotactic structure in the present invention refers to, have two unit groups be 75% with
It is upper, preferably 85% or more or five unit group be 30% or more, preferably 50% or more degree of syndiotacticity polystyrene, poly-
(ring-alkylated styrenes), poly- (halogenated styrenes), poly- (alkoxystyrene), poly- (vinyl benzoate) or their phenyl ring
A part be hydrogenated made of polymer or their mixture or the copolymer containing these structural units.It should say
It is bright, it is used as poly- (ring-alkylated styrenes) herein, including poly- (methyl styrene), poly- (ethyl styrene), poly- (propylstyrene), poly-
(butylstyrene), poly- (styryl phenyl) etc., as poly- (halogenated styrenes), including poly- (chlorostyrene), poly- (bromobenzene second
Alkene), poly- (fluorobenzene ethene) etc..In addition, as poly- (alkoxystyrene), including poly- (methoxy styrene), poly- (ethoxybenzene
Ethylene) etc..
Wherein, as preferred polystyrene resin, can enumerate polystyrene, poly- (p-methylstyrene), it is poly- (
Methyl styrene), poly- (p-tert-butylstyrene), poly- (p-chlorostyrene), poly- (m-chlorostyrene), poly- (pfluorostyrene),
And the copolymer of styrene and p-methylstyrene, wherein preferably polystyrene.
In turn, contain in polystyrene resin of the invention in the case that copolymer composition uses as copolymer, as
Its comonomer, other than the monomer of polystyrene resin as described above, can also use ethylene, propylene, butylene, oneself
The olefinic monomers such as alkene, octene, the diene monomers such as butadiene, isoprene, cyclic diene monomer or methyl methacrylate, horse
Come acid anhydrides, acrylonitrile isopolarity vinyl monomer etc..
In addition, the weight average molecular weight of the polystyrene resin of the syndiotactic structure is preferably 1.0 × 104~3.0×106, into
One step is preferably 5.0 × 104~1.5×106, particularly preferably 1.1 × 105~8.0×105.By making weight average molecular weight 1.0
×104It above, is preferably 5.0 × 104Above, 1.1 × 10 are particularly preferably5More than, available strength elongation characteristic is excellent
The formed products such as the film that different, heat resistance further increases.In addition, if weight average molecular weight is 3.0 × 106It below, is preferably 1.5
×106Below, 8.0 × 10 are particularly preferably5Hereinafter, then make tensile stress in optimum range, it is not susceptible to be broken when film etc.
Deng.
Porous particle contained in alignment films of the invention, needing its average grain diameter is 0.5 ~ 5 μm, preferably 0.8 ~ 2.5 μ
m.In the case where its average grain diameter is less than 0.5 μm, the smoothness (sliding り) of film is insufficient, windability and operational insufficient.
On the other hand, in the case where being greater than 5 μm, the diameter in the gap formed around particle by stretching etc. becomes larger, and it is not preferable.
In addition, needing the content of the particle is 0.01 ~ 3 mass %, further preferably 0.02 ~ 1 on the basis of resin combination amount of substance
The range of quality %, particularly preferably 0.05 ~ 0.5 mass %.Its content smoothness if insufficient lower limit is insufficient and windability shortage.
On the other hand, in the case where being more than the upper limit, other than resistance to scraping is insufficient, dielectric breakdown characteristic is also impaired, film is drawn
Stretching property.
From the above point of view, the average grain diameter of porous particle used in the present invention be preferably 0.5 ~ 5 μm, it is further excellent
It is selected as 0.8 ~ 2.5 μm.In turn, the compression ratio of porous particle used in the present invention is (when 0.2gf load: using Shimadzu Seisakusho Ltd.
Slight compression processed test MCTM-200 is measured) be preferably 20 ~ 90%, particularly preferably 50 ~ 85% range.The value not foot
In the case where limit, for example, when stretched film is made resistance to scraping improvement effect it is insufficient.On the other hand, in the case where being more than the upper limit, example
When stretched film is such as made, which crushes and makes to convex to form insufficient, windability improvement effect and become smaller.By making compression ratio
In above-mentioned proper range, the particle is appropriate due to stress whens being processed into stretched film etc. to be deformed, and is made it easy to more highly
Take into account windability and resistance to scraping.
As such porous particle, particle commonly known per se can be used, particularly preferably enumerate porous silica
Particle.The manufacturing method of porous silica silicon particle is not particularly limited, and can be used existing by sol-gal process, precipitation method etc.
There is known particle made of well known method.Wherein, preferably pore volume is 0.4 ~ 2.5ml/g, particularly preferably 1.2 ~ 1.8ml/g
Range particle, additionally, it is preferred that average pore size be 5 ~ 25nm range particle.
As described above, alignment films of the invention also and use silicone oil.On the basis of the quality of the porous particle, which contains
Amount is the range of 0.1 ~ 3 mass %, preferably 0.2 ~ 2.0 mass %.In the case where the content deficiency lower limit of silicone oil, the porous particle
Dispersibility be deteriorated and formed coarse agglutinating particle make be film-made draftability it is bad, furthermore resistance to scraping is not sufficiently effective.On the other hand, exist
In the case where more than the upper limit, silicone oil can be oozed out on the surface of film sometimes and pollutes manufacturing procedure.
Silicone oil referred to herein refers to, using dialkylsiloxane ingredient as the organo-silicon compound of predominant repeat unit, can arrange
Enumerate the silicone oil that siloxanes key is 2000 linear chain structures below.Such as can enumerate: the side chain of polysiloxanes, end are first
A part of the dimethyl polysiloxane of base and then polysiloxanes side chain is methyl phenyl silicone, the polysiloxanes of phenyl
A part of side chain is that the pure silicons such as the methylhydrogenpolysi,oxane of hydrogen are oily (straight silicone oil, common silicone oil);Other
The modified silicon oil of organic group is introduced in side chain, end.As organic group introduced in modified silicon oil, can enumerate:
Monoamine base, two amidos, amino, epoxy group, alicyclic epoxy group, sulfydryl, carboxyl, polyether-based, aralkyl, fluoroalkyl, long alkane
Base, higher fatty acids ester group, higher fatty acid amides base, methylacryloyl, carboxyl, phenolic group, silanol group etc..Wherein, from
From the aspect of excellent heat resistance, preferably dimethyl polysiloxane.
The fitting method of silicone oil in the film is not particularly limited, above-mentioned porous from being easy to be present in silicone oil selectively
From the viewpoint of particle surface, it is preferred that be directly added dropwise or be coated in above-mentioned porous particle, by spraying spraying etc. after, put
Enter the method stirred in mixing machine etc..
Through silicone oil attachment, treated that porous particle can add in the polymerization stage of resin material, can also be using melting
Mixing method is added to by polymerizeing in resulting resin material, without being particularly limited to.For example, it may be by the porous particle powder
The method for supplying from the same supply mouth of melting mixing machine with resin material and carrying out melting mixing;Or first to band gas vent
(vent) resin material is put into the melting mixing machines such as twin-screw mixer extruder, then the porous particle is added to powder
Position that the resin material has melted and the method for carrying out melting mixing.Wherein, the particle and the tree of silicone oil will be preferably attached with
After fat granule material (resin pellet) or toner are pre-mixed, it is supplied in the twin-screw mixer extruder with gas vent
Method.According to this method, thus it is speculated that since the particle is attached to the surface of resin granular material or toner, inside kneading machine
When being crushed, the contact interval of the particle and resin is minimum, so dispersibility further increases.
As the twin-screw mixer extruder with gas vent, it is preferable to use following device: the adding mouth setting of particle is being matched
It is placed in portion full thread (full flight) of the screw rod inside the twin-screw mixer extruder with gas vent, from above-mentioned addition
It is provided at least the one of opening's edge screw rod axis direction downstream side with for making particle be kneaded the feeding blade (sending the り wing) of dispersion
With the rotor segment (rotor segment) for returning to blade (the Reversal wing).Herein, gas exhaust piping (vent line) is for removing
By-product from resin.In addition, the twin-screw mixer extruder with gas vent preferably has rotor segment at 1 ~ 3.If irrotationality
Turn scraper plate then the particle mixing dispersion reduce, if being more than at 3 if rotor segment resin propulsive force reduction and easily occur curved
It rolls over (bent up).Additionally, it is preferred that having the kneading disk of the mixing dispersion for supplementing the porous particle.
For alignment films of the invention, the quantity for the coarse agglutinating particle that maximum length is 25 μm or more in film is excellent
It is selected as 10/m2Hereinafter, further preferably 5/m2Hereinafter, particularly preferably 3/m2Below.The number of coarse agglutinating particle
Film surface generates non-uniform protrusion if more than the upper limit, and winding offset becomes when stretch wrap film (rollback Off ィ Le system) is made
Difference, processability reduce, therefore are not suitable for.In addition, becoming the starting point of fracture in film stretching process, draftability is unstable, therefore not
It is preferred that.
In the range of not interfering the object of the invention, alignment films of the invention can be with other than adding the porous particle
Add the particle B different from the porous particle.It is preferably of the invention since above-mentioned porous particle will form biggish protrusion
Particle B plays to form smaller raised role.From this viewpoint, the preferably partial size of particle B is smaller than above-mentioned porous particle, by
Small in partial size therefore preferably not agglutinophilic particle.The average grain diameter A of particle B is preferably 0.01 μm more than and less than 0.5 μm.Into
One step is preferably 0.1 μm more than and less than 0.4 μm.If average grain diameter A deficiency lower limit, is unable to get sufficient smoothness,
It is not preferable.On the other hand, if average grain diameter A is more than the upper limit, resistance to scraping is deteriorated, and it is not preferable.
On the basis of the quality of alignment films, the content of particle B of the invention is preferably 0.5 weight % or less.If content mistake
More, then the frequency in the gap as caused by particle increases sometimes or dielectric breakdown voltage reduces.From this viewpoint, further
Preferably 0.5 weight % or less, particularly preferably 0.2 weight % or less.
As the type of particle B, various particles, the preferably small spherical particle of specific surface area can be used.It should be noted that
It is of the invention it is spherical refer to, when carrying out image analysis to the shape of particle, the ratio between maximum major diameter and area equivalent circle diameter are 1.5
It below, is preferably 1.2 shapes below.It as specific particle, is not particularly limited, can enumerate (1) two well known to itself
Silica (including hydrate, silica sand, quartz etc.);(2) aluminium oxide of various crystal habits;(3) contain the 30 above SiO of weight %2
Silicate (such as clay mineral, the alumino-silicate (including calcined material, hydrate), chrysotile, zirconium of amorphous state or crystalline state of ingredient
Stone, flyash etc.);(4) oxide of Mg, Zn, Zr and Ti;(5) sulfate of Ca and Ba;(6) phosphate of Li, Ba and Ca
(including monohydric salt and dihydric salt);(7) benzoate of Li, Na and K;(8) terephthalate of Ca, Ba, Zn and Mn;(9)
The titanate of Mg, Ca, Ba, Zn, Cd, Pb, Sr, Mn, Fe, Co and Ni;(10) chromate of Ba and Pb;(11) carbon (such as charcoal
Black, graphite etc.);(12) glass (such as glass powder, bead etc.);(13) carbonate of Ca and Mg;(14) fluorite;(15) point is brilliant
Stone-type oxide;(16) it is crosslinked organic granular (organosilicon, granules of polystyrene etc.).From obtaining good smoothness, resistance to scraping
This viewpoint consider, preferably enumerate spherical silica particles, spherical alumina particle, crosslinking organic granular and it
Composite particles, particularly preferably spherical organic silicon particle.Using the case where spherical organic silicon resin particle is as particle B
Under, when and when using polyphenylene oxide as aftermentioned thermoplasticity noncrystalline resin, make heat resistance especially high due to synergistic effect.
Alignment films of the invention include resin combination, and the polystyrene which contains above-mentioned syndiotactic structure is poly-
It closes object, the porous particle and silicone oil that average grain diameter is 0.5 ~ 5.0 μm, is by the way that resin combination edge is at least uniaxial
Direction, preferably biaxially oriented stretch, to make alignment films made of molecular chain orientation.
Moreover, resin combination of the invention preferably comprises following thermoplasticity noncrystalline resin Y.Thermoplasticity amorphous referred to herein
Resin Y is preferably the heat for being Tg more higher than SPS using the glass transition temperature Tg that DSC (differential scanning calorimetry (DSC)) is found out
Plasticity noncrystalline resin.If cooperating this analog thermoplastic noncrystalline resin Y in SPS, the glass transition of mixture is served not only as
Temperature Tg is improved, and heat resistance improves, and the dielectric breakdown voltage under high temperature also improves.In addition, can also make the hot ruler of alignment films
Very little to have good stability, draftability also improves.From this viewpoint, the glass transition temperature Tg of thermoplasticity noncrystalline resin Y is preferred
It is 150 DEG C or more, further preferably 180 DEG C or more, particularly preferably 200 DEG C or more.Thermoplasticity noncrystalline resin Y joined together
Glass transition temperature Tg it is higher, the improvement effect of the said effect such as thermal dimensional stability is bigger.If in view of melting is squeezed
Out etc., then the substantive upper limit is preferably 350 DEG C, more preferably 300 DEG C.
As this analog thermoplastic noncrystalline resin Y, preferably it is exemplified as the aromatic polyethers such as polyphenylene oxide, polyetherimide, gathers
Carbonic ester, polyarylate, polysulfones, polyether sulfone, polyimides etc..Wherein, polyphenylene oxide is due to easily making draftability raising and and antioxygen
There is synergistic effect, or heat resistance, dimensional stability improves but also dielectric breakdown voltage because not only making when agent combines
It further increases, therefore particularly preferably.As polyphenylene oxide resin used herein, conventionally known resin can be enumerated, such as: it is poly-
(2,3- dimethyl -6- ethyl -1,4- phenylate (phenylene ether)), poly- (2- methyl -6- chloromethyl -1,4- phenylate) gather
(2- methyl -6- ethoxy -1,4- phenylate), poly- (2- methyl -6- normal-butyl -1,4- phenylate), it is poly- (isopropyl -1 2- ethyl -6-,
4- phenylate), poly- (2- ethyl -6- n-propyl -1,4- phenylate), poly- (2,3,6- trimethyl -1,4- phenylate), poly- (2- (4 '-methyl
Phenyl) -1,4- phenylate), poly- (the bromo- 6- phenyl -1,4- phenylate of 2-), poly- (2- methyl -6- phenyl -1,4- phenylate), poly- (2- benzene
Base -1,4- phenylate), poly- (the chloro- 1,4- phenylate of 2-), poly- (2- methyl-1,4- phenylate), poly- (the chloro- 6- ethyl -1,4- phenylate of 2-),
Poly- (the bromo- 1,4- phenylate of the chloro- 6- of 2-), poly- (2,6- diη-propyl -1,4- phenylate), poly- (2- methyl -6- isopropyl -1,4- benzene
Ether), poly- (the chloro- 6- methyl-1 of 2-, 4- phenylate), poly- (2- methyl -6- ethyl -1,4- phenylate), poly- (the bromo- 1,4- benzene of 2,6- bis-
Ether), poly- (the chloro- 1,4- phenylate of 2,6- bis-), poly- (2,6- diethyl -1,4- phenylate), poly- (2,6- dimethyl -1,4- phenylate) etc.
Polymers and their copolymer.In addition, being also suitable for using these resins after the modifier modifications such as maleic anhydride, fumaric acid
Modifier.In turn, it can also use the vinyl aromatic compounds such as styrene and above-mentioned polyphenylene oxide graft copolymerization or embedding
Copolymer made of Duan Gongju.Wherein, particularly preferably poly- (2,6- dimethyl-Isosorbide-5-Nitrae-phenylate).
For the intrinsic viscosity of polyphenylene oxide resin, in chloroform, when being measured at 30 DEG C, the preferably model of 0.2 ~ 0.8dl/g
It encloses, the range of more preferably 0.3 ~ 0.6dl/g.When intrinsic viscosity is less than 0.2dl/g, the machinery of gained resin combination is strong sometimes
Degree reduces.On the other hand, when being greater than 0.8dl/g, there is the mobility reduction of gained resin combination, melt-shaping is film etc.
When processing become difficult trend.Polyphenylene oxide resin can be used in combination two or more, polyphenylene oxide tree that at this time can be different by intrinsic viscosity
Rouge mixes and reaches required intrinsic viscosity.
Alignment films of the invention cooperate 5 mass % or more and 48 mass % are below preferably with respect to the quality of the alignment films
Above-mentioned thermoplasticity noncrystalline resin Y.By the amount cooperation thermoplasticity noncrystalline resin Y with above range, excellent heat resistance can be made, and
Increase the improvement effect of dielectric breakdown voltage.I.e., it is possible to the dielectric breakdown voltage under improving high temperature.In the case that content is very few,
Heat resistance has the tendency that variation, and the improvement effect of dielectric breakdown voltage has the tendency that reduction, the improvement effect of draftability
Not enough.From this viewpoint, the content of thermoplasticity noncrystalline resin Y is more preferably 8 mass % or more, further preferably 11 mass %
Above, 20 mass % or more are particularly preferably.In addition, the crystallinity of SPS has the tendency that reduction, film in the case that content is excessive
Heat resistance have the tendency that variation.From this viewpoint, the content of thermoplasticity noncrystalline resin Y be more preferably 45 mass % or less, into
One step is preferably 40 mass % or less, particularly preferably 35 mass % or less.
Certainly, in the range of not interfering the purpose of the present invention, alignment films of the invention are in addition to containing above-mentioned SPS, thermoplastic
Property noncrystalline resin Y other than, can also be further and with other resins.
<antioxidant>
Alignment films of the invention preferably comprise antioxidant.As antioxidant, can be capture the free radical generated and
It prevents the main anti-oxidant of oxidation or the peroxide of generation is decomposed and prevents any in the auxiliary antioxidant of oxidation
Kind.Phenolic antioxidant, amine antioxidant can be enumerated as main anti-oxidant, phosphorus system can be enumerated as auxiliary antioxidant
Antioxidant, sulfur antioxidant.Wherein preferred main anti-oxidant, particularly preferred phenolic antioxidant.
In addition, antioxidant preferably its pyrolysis temperature is 250 DEG C or more.If pyrolysis temperature is high, the medium under high temperature
The improvement effect of breakdown voltage increases.In the case that pyrolysis temperature is too low, antioxidant itself is pyrolyzed when melting extrusion, is deposited
Trend the problems such as being easy to produce pollution process, polymer coloration is yellow, not preferably.From this viewpoint, antioxidant
Pyrolysis temperature be more preferably 280 DEG C or more, further preferably 300 DEG C or more, be particularly preferably 320 DEG C or more.The present invention
Antioxidant be preferably to be not easy the antioxidant that is pyrolyzed, although the preferably high antioxidant of pyrolysis temperature, actually its
The upper limit is 500 DEG C or less Zuo You.
Additionally, it is preferred that the fusing point of antioxidant is 90 DEG C or more.It is anti-oxidant in melting extrusion in the case that fusing point is too low
Agent is faster melted than polymer, there are polymer the screw feed partial slip of extruder trend.Make polymer as a result,
Supply it is unstable, generate film uneven thickness (thick body spot) be deteriorated the problems such as.From this viewpoint, the fusing point of antioxidant is more
Preferably 120 DEG C or more, further preferably 150 DEG C or more, particularly preferably 200 DEG C or more.On the other hand, antioxidant
In the case that fusing point is excessively high, antioxidant is difficult to melt when melting extrusion, and there are the trend that the dispersion in polymer is deteriorated.By
This, generates the additive effect of antioxidant only in local the problems such as occurring.From this viewpoint, the fusing point of antioxidant is preferably
300 DEG C hereinafter, more preferably 250 DEG C hereinafter, further preferably 220 DEG C hereinafter, particularly preferably 170 DEG C or less.
As antioxidant as described above, commercially available product can also be directly used.It is enumerated as commercially available product, such as preferably
Out: pentaerythrite four [3- (3,5- di-tert-butyl-hydroxy phenyl) propionic ester] (Ciba Specialty Chemicals company
System: trade name IRGANOX1010), N, bis- [3- (3,5- di-tert-butyl-hydroxy phenyl) propiono] hydrazine (Ciba of N '-
Specialty Chemicals corporation: trade name IRGANOX1024), N, bis- [3- (bis- uncles of 3,5- of N '-hexane -1,6- diyl
Butyl -4- hydroxy phenyl) propionamide] (Ciba Specialty Chemicals corporation: trade name IRGANOX1098) etc..
On the basis of the quality of alignment films, the content of antioxidant is preferably 0.1 mass % or more and 5 mass % or less.It is logical
It crosses and antioxidant is contained with the content of above-mentioned numberical range, the improvement effect of dielectric breakdown voltage can be increased.Antioxidant
In the case that content is very few, what insufficient, dielectric breakdown voltage improvement effect that there are the additive effects of antioxidant reduced becomes
Gesture.From this viewpoint, the content of antioxidant be more preferably 0.2 mass % or more, further preferably 0.5 mass % or more,
Particularly preferably 0.7 mass % or more.On the other hand, in the case that content is excessive, antioxidant has easy agglutination in biaxially-stretched film
Trend, the defect as caused by antioxidant had increased trend, the improvement effect of dielectric breakdown voltage made due to the defect
Decline.From this viewpoint, the content of antioxidant is more preferably 3 mass % or less, further preferably 2 mass % or less, spy
It You Xuanwei not 1.5 mass % or less.
These antioxidants can be used alone, and can also be used in combination two or more.
<other additives>
In the range of not interfering the purpose of the present invention, such as in order to further improve formability, mechanics physical property, superficiality
Other resin components different from thermoplasticity noncrystalline resin Y can be contained Deng, alignment films of the invention, or addition is antistatic
The additives such as agent, colorant, weather resisting agent.As long as in addition, can also be used in combination on a small quantity in the range of not interfering the purpose of the present invention
Inert particle other than porous particle and above-mentioned particle B.
<metal layer>
Alignment films of the invention are by being made capacitor in for example, at least single side superimposed layer metal layer.For metal layer
Material is not particularly limited, such as can enumerate aluminium, zinc, nickel, chromium, tin, copper and their alloy.In turn, these metals
Layer can be aoxidized in right amount.In addition, in order to be simply forming metal layer, metal layer is preferably the vapor deposition for using vapour deposition method to be formed
Type metal layer.
In addition, when carrying out lamination to metal layer, by the way that metal is further arranged on the surface of coating layer of the invention
Layer, can make substrate layer and metal layer have the bonding force of appropriateness, implement gold when the processing such as winding in the manufacture of thin film capacitor
Belonging to layer will not remove, and play the function as capacitor.In turn, while making coating layer and metal layer that there is appropriate adhesiveness, i.e.,
Remove the coating layer to discharge and surface can be small first from film, only metal layer and coating layer is destroyed, and film is not
It is destroyed, thus without short-circuit condition is caused, the improvement effect of dielectric breakdown voltage can be increased.
<film characteristics>
(refractive index of thickness direction)
The refractive index in alignment films preferred thickness direction of the invention is 1.575 or more and 1.635 or less.By making thickness side
To refractive index reach above-mentioned numberical range, dielectric breakdown voltage can be further increased.In addition, film in thin film fabrication process
The frequency of fracture reduces, and is easy to improve production efficiency.From this viewpoint, the refractive index of thickness direction be preferably 1.620 hereinafter,
Further preferably 1.615 hereinafter, particularly preferably 1.610 or less.On the other hand, the too low situation of the refractive index of thickness direction
Under, dielectric breakdown voltage has the tendency that reduction.
In addition, the frequency of high-insulativity film film breaks in the manufacturing process of capacitor of the invention increases, capacitor
The production efficiency of device is easily reduced.In turn, there are the trend that the uneven thickness of film is deteriorated, it is difficult to obtain the capacitor of stay in grade
Device.From this viewpoint, the refractive index of thickness direction is preferably 1.590 or more, is more preferably 1.595 or more, especially excellent
It is selected as 1.600 or more.
The refractive index of above-mentioned thickness direction can be adjusted by the stretching condition of film.
(film thickness)
The thickness of alignment films of the invention is not particularly limited, and examines in terms of more thin more be easy to appear effect of the invention
Consider, particularly preferably 0.4 μm more than and less than 6.5 μm.Further preferably 0.4 μm more than and less than 6.0 μm, particularly preferably
0.5 μm more than and less than 3.5 μm.In addition, by reaching above-mentioned film thickness, the high capacitor of available electrostatic capacitance.
(voidage)
Alignment films of the invention are free of gap preferably on the surrounding parenchyma of porous particle.Sky is substantially free of in the present invention
Gap refers to, is free of gap, or the gap containing the degree that particle will not be caused to fall off or containing will not make dielectric breakdown voltage
The gap of reduced degree.Refer to when measuring aftermentioned voidage, voidage is 50% or less, particularly preferably 30% or less.
It should be noted that not only work in-process can cause filler to fall off, pollute process, and surface is thick if voidage is more than the upper limit
Rugosity changes, and the winding for generating film roll is bad.
(dielectric breakdown voltage (BDV))
It is preferred that the dielectric breakdown voltage (BDV) of alignment films of the invention at 120 DEG C is 450kV/mm or more.Dielectric breakdown
Voltage indicates there is excellent dielectric breakdown voltage at high temperature in above-mentioned numberical range.The dielectric breakdown voltage is more
Preferably 500kV/mm or more, further preferably 520kV/mm or more.
In addition, the deviation of alignment films of the invention for dielectric breakdown voltage, standard deviation be preferably 40kV/mm with
Under, more preferably 30kV/mm or less, further preferably 20kV/mm or less.
Alignment films of the invention by using specific porous particle, the average value of dielectric breakdown voltage can be increased and
And reduce its standard deviation, the reliability of material when can be improved the electrically insulating material as capacitor etc..That is, due to that can subtract
The standard deviation of small dielectric breakdown voltage, therefore can inhibit the reduction of dielectric breakdown voltage minimum value, increase dielectric breakdown voltage
Average value.
<manufacturing method of film>
Alignment films of the invention can substantially be obtained using the method that existing known or this field is accumulated.With
Under, the manufacturing method for obtaining alignment films of the invention is described in detail.It should be noted that alignment films of the invention can be single shaft
Alignment films can also be biaxially oriented film, from the aspect of production efficiency, the balance of physical property, preferably Biaxially oriented film.Hereinafter, with
It is illustrated for Biaxially oriented film.
Firstly, as described above, the resin combination progress heating melting that will be combined with SPS, porous particle and silicone oil, is made
Non-stretched.Specifically, more than the fusing point (Tm, unit: DEG C) of resin combination and at (Tm+50 DEG C) temperature below into
Row heating melting, squeezes out slabbing, and cooling and solidifying obtains non-stretched.The intrinsic viscosity that gained is non-stretched is preferably 0.35 ~
The range of 0.9dl/g.
Then, biaxial stretch-formed to this non-stretched progress.Stretching can be to longitudinal (mechanical axis direction) and laterally (with machinery
Axis direction and the vertical direction of thickness direction) it stretches simultaneously, it can also successively stretch in any order.Such as the feelings successively stretched
Under condition, first along uniaxial direction, more than (- 10 DEG C of the glass transition temperature of resin combination (Tg, unit: DEG C)) and (Tg+
70 DEG C) at temperature below, with 3.2 times or more and 5.8 times or less, preferably 3.3 times or more and 5.4 times or less, it is further excellent
It is selected as 3.4 times or more and 5.0 times of multiplying powers below is stretched, then along the direction orthogonal with the single shaft direction, in Tg or more
And at (Tg+80 DEG C) temperature below, with 3.8 times or more and 5.9 times or less, preferably 4.0 times or more and 5.5 times or less, more
Preferably 4.1 times or more and 5.1 times or less, further preferably 4.2 times or more and 4.9 times of multiplying powers below are stretched.Into
And the situations that area stretch multiplying power (=vertical stretching ratio × horizontal stretching ratio) is 12.0 times or more, it can obtain having above-mentioned flat
The film of surface orientation coefficient, therefore it is preferred that.If area stretch multiplying power reduces, heat resistance is deteriorated, not preferably.Therefore, area is drawn
It stretches multiplying power and is more preferably 13.0 times or more, further preferably 13.5 times or more, particularly preferably 14.0 times or more.In addition, such as
Fruit area stretch multiplying power is excessively high, then is easily broken when being film-made, stretching, not preferably.From this viewpoint, area stretch multiplying power is excellent
It is selected as 22 times or less, more preferably 20 times or less, further preferably 18 times or less, particularly preferably 17 times or less.
It should be noted that in the present invention, can by non-stretched on piece or by this non-stretched preferably along longitudinal direction into
Coating is used to form the masking liquid of coating layer on monadic stretching membrane made of row is uniaxially stretched, to form coating layer.
Then, (Tg+70 DEG C) ~ Tm at a temperature of carry out heat fixation.The temperature of heat fixation is 200 DEG C or more and 260 DEG C
It below, is preferably 225 DEG C or more and 255 DEG C or less, further preferably 235 DEG C or more and 250 DEG C or less.Heat-fixing temperature mistake
In the case where height, especially in the relatively thin film of manufacture film thickness, Yi Fasheng film breaks, and also uneven thickness is deteriorated.Such as
After fruit heat fixation as needed 20 DEG C ~ 90 DEG C lower than heat-fixing temperature at a temperature of carry out relaxation processes, then dimensional stability
Improve.
Then, the second stretched film of the invention is illustrated.
<stretched film>
Second stretched film of the invention includes resin combination, which contains the polystyrene of syndiotactic structure
The porous silica silicon particle that resin (hereinafter sometimes referred to SPS) and average grain diameter A are 0.5 ~ 5.0 μm.
For the polystyrene resin of syndiotactic structure used herein, can carry out and first present invention in illustrate between advise
The polystyrene resin of structure similarly illustrates.
Below unless stated otherwise, for porous silica silicon particle contained by stretched film of the invention, can carry out with it is upper
The porous silica silicon particle illustrated in first present invention is stated similarly to illustrate.It should be noted that it is different from first present invention, the
Have specific specific surface area and DBA value in two present invention, therefore can not and use silicone oil.
Porous silica silicon particle further requirement DBA value (di-n-butyl amine adsorbance) used in second present invention is
200 mMs/kg or less, preferably 100 mMs/kg or less.It is not only more in the case that DBA value is greater than 200 mMs/kg
Dispersion of the hole silica dioxide granule in resin combination is deteriorated, and is also easy to produce when being configured to stretched film between resin and particle
Gap, it is not preferable.It should be noted that DBA value described herein is the toluene solution processing porous silica with di-n-butyl amine
Di-n-butyl amine adsorbance (adsorbance (mM) of the di-n-butyl amine relative to 1kg particle) when silicon particle.
The manufacturing method of the porous silica silicon particle is not particularly limited, and can be readily derived in the following manner:
For the surface of the porous silica silicon particle using the conventionally known method manufacture such as sol-gal process, the precipitation method, example is utilized
Such as alkylalkoxysilane compounds, silicon nitrogen silane compound are handled, and are modified to the silanol group of particle surface,
Thus it obtains.In the case that particle surface silanol group is more, reduced with the compatibility of the polystyrene resin of syndiotactic structure,
And dispersibility of the particle in resin combination reduces.In addition, easily being produced between resin and particle when being not only configured to stretched film
Raw gap, and the activity of particle surface rises is easy to produce the drawbacks such as be aggregated again of particle when being matched in resin material.
In addition, porous silica silicon particle be preferably primary particle agglutination made of agglutinating particle, further preferably this one
Secondary grain diameter is 0.01 ~ 0.1 μm, pore volume is within the scope of 0.5 ~ 2.0ml/g, in addition, average pore size is preferably in 5 ~ 25nm model
In enclosing.Think that, by meeting the important document, due to the stress being processed into whens stretched film etc., which moderately deforms, make around particle
The diameter for being formed by gap reduces.
Described above second stretched film of the invention preferably comprises other than containing above-mentioned porous silica silicon particle
Average grain diameter A is 0.01 μm of particle (hereinafter sometimes referred to inert particle C) more than and less than 0.5 μm.By containing the inertia
Particle C is able to maintain high dielectric breakdown voltage and keeps the smoothness of stretched film good, and can obtain windability excellent drawing
Stretch film.In the case that the average grain diameter A of inert particle C is too small, the improvement of smoothness has the tendency that reduction, windability improvement
Effect also reduces.On the other hand, in the case where excessive, the excessive height of the low protrusion of film surface causes smoothness excessively high, from
And the windability reductions such as end face offset are also easy to produce in winding.In addition, the gap in film has the tendency that increase, resistance to scraping, Jie
Matter breakdown voltage reduces.From this viewpoint, the average grain diameter A of inert particle C be preferably 0.05 μm more than and less than 0.5 μm,
Further preferably 0.1 μm more than and less than 0.5 μm, particularly preferably 0.2 ~ 0.4 μm.It should be noted that it is preferred that inert particle C
Average grain diameter A be less than above-mentioned porous silica silicon particle average grain diameter A, the difference between the two is preferably 0.2 μm or more.
The spherical particle that inert particle C preferable particle size ratio (major diameter/minor axis) is 1.0 ~ 1.3.Partial size is than further preferred
It is 1.0 ~ 1.2, particularly preferably 1.0 ~ 1.1.If partial size ratio can be such that windability raising imitates in above-mentioned numberical range
The improvement effect of fruit and dielectric breakdown voltage is bigger.
The inert particle can be any one of organic system particle, inorganic system's particle.As organic system particle, such as can arrange
It enumerates: polystyrene resin beads, silicone resin particles, acrylic resin particle, styrene-acrylic resins particle, two
The high scores such as vinyl benzene-acrylic resin particle, polyester resin particle, polyimide resin particle, melamine resin particles
Sub- resin particle.Wherein, from the viewpoint of smoothness and resistance to scraping are excellent, preferably silicone resin particles, polystyrene tree
Rouge particle, particularly preferably spherical organic silicon resin particle, spherical polystyrol resin particle as described above.In addition, as inorganic
It is particle, example (1) ~ (15) of the particle B illustrated in first present invention can be enumerated.Wherein, excellent from smoothness and resistance to scraping
From the perspective of different, preferably calcium carbonate granule, silica dioxide granule, particularly preferred silica dioxide granule.As described above, such nothing
Machine system particle is preferably spherical, particularly preferred spherical silica particles.
Spherical organic silicon resin particle is most preferably as inert particle C.Use spherical organic silicon resin particle as
In the case where inert particle, and when using polyphenylene oxide as aftermentioned thermoplasticity noncrystalline resin, heat resistance is made by synergistic effect
It is especially high.
Content of the inert particle C in 100 mass % of resin combination is preferably 0.01 ~ 3 mass %, more preferably 0.05
~ 2 mass %, further preferably 0.1 ~ 0.5 mass %, particularly preferably 0.1 ~ 0.3 mass % or less.By within the above range
Containing the inert particle, it is able to maintain high dielectric breakdown voltage and keeps the operability of film good.
It should be noted that inert particle can be added directly or as master batch chips (マ ス タ ー チ ッ プ), so that will
When resin combination melt-shaping without inert particle is film, the inert particle content in gained film is in above range
It is interior.
Second stretched film of the invention preferably also contains thermoplasticity noncrystalline resin.For thermoplasticity amorphous tree described herein
Rouge can carry out similarly illustrating with the thermoplasticity noncrystalline resin illustrated in above-mentioned first present invention.
In addition, in the range of not interfering the purpose of the present invention, in addition to containing above-mentioned in the second stretched film of the invention
Other than SPS, thermoplasticity noncrystalline resin, can also and with other resins.
Second stretched film of the invention preferably also contains antioxidant.As antioxidant, can carry out and above-mentioned first
The antioxidant illustrated in invention similarly illustrates.
In the range of not interfering the purpose of the present invention, in order to further improve such as film formation property, mechanics physical property, superficiality
Other resin components different from thermoplasticity noncrystalline resin can also be contained Deng, the second stretched film of the invention, or addition is anti-
The additives such as electrostatic agent, colorant, weather resisting agent.In addition, can also be used in combination on a small quantity in the range of not interfering the purpose of the present invention
Inert particle other than above-mentioned particle.
For the stretched film of the invention for second, maximum length present in the refractive index and film for thickness direction
For 25 μm or more of coarse agglutinating particle, can carry out similarly illustrating with the content illustrated in above-mentioned first present invention.
Second stretched film of the invention is free of gap preferably on the surrounding parenchyma of porous silica silicon particle.Essence herein
It is upper identical without the meaning illustrated in gap and first present invention.It should be noted that not only adding if voidage is greater than 50%
Particle can be caused to fall off in work, pollute process, and surface roughness changes and generate the operability such as winding is bad of film roll
It reduces, in addition, dielectric breakdown voltage reduces and its deviation is (dielectric breakdown characteristic is easily reduced) also easy to increase.
The thickness of second stretched film of the invention is not particularly limited, in terms of more thin more be easy to appear effect of the invention
Consider, particularly preferably 0.4 ~ 6.5 μm.Further preferably 0.4 ~ 6.0 μm, particularly preferably 0.5 ~ 3.5 μm.On reaching
State film thickness, the high capacitor of available electrostatic capacitance.
Dielectric breakdown voltage (BDV) of further preferred second stretched film of the invention at 120 DEG C be 450V/ μm with
On.Dielectric breakdown voltage, which meets the important document, indicates there is excellent dielectric breakdown voltage at high temperature.The dielectric breakdown
Voltage is more preferably 500V/ μm or more, further preferably 520V/ μm or more.
In addition, the standard deviation of above-mentioned dielectric breakdown voltage is preferably 40V/ μm or less, more preferably 30V/ μm or less, into
One step is preferably 20V/ μm or less.The standard deviation, which meets above-mentioned important document, indicates that the reduction of the dielectric breakdown voltage of part is small (partially
Difference is small), the reliability of material when electrically insulating material as capacitor etc. can be improved.
The stretched film of the invention for second, preferably its at least single side centerline average surface roughness Ra be 7 ~
89nm.By making centerline average surface roughness Ra within this range, windability improvement effect can be increased.In addition, can
So that resistance to blocking (blocking resistance) improves, the appearance of volume is good.Centerline average surface roughness Ra is too low
In the case where, smoothness has the tendency that too low, windability improvement effect reduces.On the other hand, in the case where excessively high, smoothness
Have the tendency that excessively high, when winding easily causes end face offset etc., windability improvement effect reduces.From this viewpoint, center
The lower limit of line average surface roughness Ra is more preferably 11nm or more, further preferably 21nm or more, particularly preferably 31nm
More than.In addition, the upper limit of centerline average surface roughness Ra be more preferably 79nm hereinafter, further preferably 69nm hereinafter,
Particularly preferably 59nm or less.
In addition, the stretched film of the invention for second, 10 mean roughness Rz of preferably its at least single side are 200 ~
3000nm.By making 10 mean roughness Rz within this range, windability improvement effect can be increased.10 average roughness
Spend Rz it is too low in the case where, the windability raisings such as de-gas has the tendency that reduction when rolling coiled, and film is easy to slide laterally
Effect reduces.In particular, the toughness (Off ィ Le system waist) of film disappears, therefore de-gas in the case where film thickness is relatively thin
Have the tendency that further decreasing, windability improvement effect further decreases.On the other hand, 10 mean roughness Rz are excessively high
In the case of, coarse protrusion has increased trend, and the improvement effect of dielectric breakdown voltage reduces.From this viewpoint, 10 points average
The lower limit of roughness Rz is more preferably 600nm or more, further preferably 1000nm or more, particularly preferably 1250nm or more.
In addition, the upper limit of 10 mean roughness Rz is more preferably 2600nm or less, is more preferably 2250nm or less, particularly preferred
For 1950nm or less.
<manufacturing method of film>
Described above second stretched film of the invention can be used and above-mentioned first other than it can not add silicone oil
The same manufacturing method of the manufacturing method illustrated in invention is manufactured.
<resin combination>
In the manufacture of second stretched film of the invention it is preferable to use resin combination, be the polyphenyl in above-mentioned syndiotactic structure
Resin combination made of melting mixing porous silica silicon particle in vinylite.
The average grain diameter B of porous silica silicon particle used herein is preferably 0.5 ~ 5 μm, particularly preferably 0.8 ~ 3.0 μ
The range of m.Porous silica in the case that the average grain diameter is less than 0.5 μm, whens there are melt-shaping being film etc. in film
The average grain diameter A of silicon particle reduces, and smoothness is insufficient, windability, operational also insufficient trend.On the other hand, it is greater than 5 μm
In the case where, whens melt-shaping is film etc., because stretching etc. easily increases the diameter for being formed by gap around particle.In addition,
On the basis of resin combination amount of substance, the content of the particle is the range of 0.01 ~ 10 mass %, preferably 0.5 ~ 5.0 mass %.If
The smoothness that content is then configured to the formed products after film etc. less than 0.01 mass % is insufficient, and operability is insufficient.On the other hand,
In the case where 10 mass %, dispersion of the particle in resin combination is deteriorated, and it is not preferable.It should be noted that by resin group
In the case where closing the direct melt-shaping of object and being configured to film etc., the content of particle as described above, it is preferred to for 0.01 ~ 3 mass %,
The range of further preferably 0.02 ~ 1 mass %, particularly preferably 0.05 ~ 0.5 mass %.On the other hand, with matrix resin etc.
In the case that dilution carries out melted masking, resin combination high using content, being, for example, 0.5 ~ 10 mass %, being diluted makes
It is configured in the resin combination of film etc. the content (in film) and reaches above range.
In turn, as described above, it is desirable that the DBA value of porous silica particle is 200 mMs/kg or less, preferably 100
MM/kg or less.In the case that DBA value is greater than 200 mMs/kg, not only porous silica silicon particle is in resin combination
In dispersion be deteriorated, and be also easy to produce gap between resin and particle when being configured to stretched film, it is not preferable.
In addition, as described above, the compression ratio of porous silica silicon particle is preferably 20 ~ 90%, particularly preferably 50 ~ 85%
Range.Think that, by making compression ratio within this range, due to the stress being processed into whens stretched film etc., which moderately deforms, make
The diameter that gap is formed by around particle reduces.
As described above, the resin combination preferably comprises thermoplasticity noncrystalline resin, especially polyphenylene oxide resin.By resin
The direct melt-shaping of composition and in the case where being configured to film etc., on the basis of the quality of resin combination, thermoplasticity amorphous
The content ratio of resin is preferably the range of 48 mass % or less, further preferably 5 ~ 48 mass %.Thus, it is possible to make heat resistance
It is excellent, and improve dielectric breakdown voltage, it can obtain the stretched film that the dielectric breakdown voltage under high temperature improves.Content is very few
In the case where, the improvement effect of heat resistance has the tendency that reduction, and the improvement effect of dielectric breakdown voltage also has becoming for reduction
The improvement effect of gesture, draftability is insufficient.From this viewpoint, the content of thermoplasticity noncrystalline resin is more preferably 8 mass % or more,
Further preferably 11 mass % or more, particularly preferably 20 mass % or more.In addition, in the case that content is excessive, the crystallization of SPS
Property has the tendency that easily reducing, and the heat resistance of film also has the tendency that reduction.From this viewpoint, the content of thermoplasticity noncrystalline resin
More preferably 45 mass % or less, further preferably 40 mass % or less, particularly preferably 35 mass % or less.On the other hand, exist
Resin combination is used as masterbatch (masterbatch), with gathering without porous silica silicon particle, containing such as syndiotactic structure
The masterbatch of the matrix resins such as phenylethylene resin series or other additives carries out using polyphenylene oxide in melting mixing and diluted situation
The resin combination that the content ratio of resin is high, such as content is 20 ~ 80 mass %, is diluted the resin for making to be configured to film
Content in composition reaches above range.
It, can be in resin without being particularly limited to for the mixed method of above-mentioned porous silica silicon particle and resin material
The polymerization stage of material adds, and can also be added to using melting mixing method by polymerizeing in resulting resin material.For example, can
Melting mixing is supplied and carried out from the same supply mouth of melting mixing machine by the granular powder and resin material, can also use
Resin material is first put into melting mixing machines such as the twin-screw mixer extruders with gas vent, then the particle is added with powder
The method at the position melted to the resin material.Wherein, preferably the particle is pre-mixed with resin granular material or toner
Afterwards, the method being supplied in the twin-screw mixer extruder with gas vent.According to this method, thus it is speculated that since the particle is attached to tree
The surface of fat granule material or toner, therefore when being crushed inside kneading machine, the contact interval of the particle and resin is minimum,
So dispersibility further increases.
As the twin-screw mixer extruder with gas vent, it is preferable to use following device: the adding mouth setting of particle is being matched
Be placed in the full thread portion of the screw rod inside the twin-screw mixer extruder with gas vent, from above-mentioned adding mouth along screw rod axle center side
It is provided at least one downstream with for making particle be kneaded the feeding blade of dispersion and returning to the rotor segment of blade.
Herein, gas exhaust piping is used to remove the by-product from resin.In addition, the twin-screw mixer extruder with gas vent preferably 1 ~
There is rotor segment at 3.The mixing dispersion of the particle reduces if scraper plate without spin, if rotor segment is more than resin at 3
Propulsive force is reduced and is easily bent.Additionally, it is preferred that having the kneading disk of the mixing dispersion for supplementing the porous particle.
<capacitor>
The stretched film of aforementioned present invention can be by obtaining capacitor in for example, at least single side lamination metal layer.For gold
The material for belonging to layer, is not particularly limited, such as can enumerate aluminium, zinc, nickel, chromium, tin, copper and their alloy.In turn, this
A little metal layers can be aoxidized in right amount.In addition, in order to be simply forming metal layer, metal layer is preferably formed using vapour deposition method
Vapor deposition type metal layer.It should be noted that when carrying out lamination to metal layer, by presetting coating layer, stretched film can be made
Layer (substrate layer) and metal layer have the bonding force of appropriateness, implement metal layer when the processing such as winding in the manufacture of thin film capacitor
It will not remove, play the function as capacitor.Make coating layer and metal layer that there is appropriate adhesiveness simultaneously, even if putting
Electricity and surface can be small coating layer first removed from film, only metal layer and coating layer is destroyed, and film is not destroyed,
Thus without short-circuit condition is caused, the improvement effect of dielectric breakdown voltage can be increased.
Embodiment
Hereinafter, by embodiment, invention is further explained.It should be noted that each characteristic value using following methods into
Row measurement.
(1) film thickness
Using electronic gauge (trade name " K-312A type " of Anritsu (strain) system), in the case where needle presses 30g, measurement film is thick
Degree.
(2) average grain diameter of particle
(2-1) average grain diameter A
Average grain diameter A in film is as follows: carrying out processing to film surface with plasma reactor exposes particle, benefit
Layer is deposited in the gold thin film that the surface forms thickness 200 ~ 300 with golden sputtering equipment.Then, using scanning electron microscope 1
Observed under 10000 times, use Japanese レ ギ ュ レ ー タ ー (strain) LUZEX (ル ー ゼ ッ Network ス processed) 500, for 110
A particle finds out its area equivalent particle size (Di), by wherein measure 5 maximum area equivalent particle sizes (Di) and 5 minimal faces
Average grain diameter A of the number mean value of their area equivalent particle size (Di) after except product equivalent particle size (Di) as particle.
(2-2) average grain diameter B
Average grain diameter B before being added in polymer is found out in the following manner.That is, ethyl alcohol is used to be situated between as dispersion
Matter is found out averagely using Shimadzu Seisakusho Ltd. laser diffraction formula particle size distribution device SALD-2000J by volume distribution standard
Partial size B.
(3) compression ratio of particle
For porous particle before being added in polymer, (most using the micro- compression test MCTM-200 of Shimadzu Seisakusho Ltd.'s system
Big load 1gf, minimum load 0.2gf), under conditions of load load speed 0.0725gf/sec, prepare n=5 partial size and
The identical particle of average grain diameter, the compression ratio under measuring load 0.2gf, calculates compression ratio of its average value as particle.
(4) content of porous particle, other particles, silicone oil, thermoplasticity noncrystalline resin Y, antioxidant is respectively according to aftermentioned
Method measures.
Porous particle, other particles: Selective dissolution resin without dissolved particles solvent, resulting orientation membrane sample is molten
Particle is centrifugated by Xie Hou from resin, using particle relative to example weight ratio (weight %) as granule content.Separately
Outside, containing in the case where other particles, according to each particle there are ratios to find out respective content.
Silicone oil: pass through1H-NMR measurement,13C-NMR measurement, with integrating number 32 times, using cryoprobe, (high sensitivity is visited
Needle) determine silicone oil ingredient and each component amount.
Thermoplasticity noncrystalline resin Y: pass through1H-NMR measurement,13C-NMR measurement, determine thermoplasticity noncrystalline resin Y ingredient and
Each component amount.
Antioxidant: pass through1H-NMR measurement,13C-NMR measurement, determine antioxidant ingredient and each component amount.It should
Illustrate, in N, bis- [3- (3,5- di-tert-butyl-hydroxy phenyl) the propionamide] (registered trademarks of N '-hexane -1,6- diyl
Irg1098 in the case where), to peak intensity caused by the hydrogen in the hydrocarbon chain between tert-butyl-hydroxy phenyl and amido bond
Degree is measured.Based on the NMR measurement result, the content of former stabilizer is converted into when finding out stabilizer and resin reaction.In addition,
It is mixed not with the stabilizer of polymer reaction and with the stabilizer of polymer reaction, even if being conceived to same hydrocarbon chain
In the case where also detecting that multiple peak positions, content is found out according to their aggregate value.
(5) it is film-made draftability
Under conditions of each embodiment and comparative example, polymer is supplied to extruder, according to following standard, to passing through mold
(ダ イ ス) and the generation situation of volatile ingredient when carrying out melting extrusion and the film system of film stretched in film making process
Film property is evaluated,
◎: without coarse agglutinator etc. when polymer melting squeezes out, film making process without fracture, can also be produced;
〇: there is coarse agglutinator when squeezing out in polymer melting, but without fracture, can be produced;
△: there is coarse agglutinator when squeezing out in polymer melting, and is broken once in a while, can not carry out steady production;
×: coarse agglutinator is obvious when polymer melting squeezes out, or is broken frequent occurrence, can not be produced.
(6) filter boosts
Using Japanese PALL corporation H-250 (sintering (grain) type filters that 25 μm of mesh), it will include small porous particle A's
Resin is converted into discharge rate (kg)/filter area (cm2) when, in 300 DEG C of extrusion temperature, 5kg/cm2In the case where lower filtering,
The filter differential pressures (Δ P: unit MPa) begun to ramp up from initial pressure when having filtered 100kg are evaluated, according to subscript
Standard is evaluated,
◎: filter, can steadily extrusion resin without boosting when polymer melting squeezes out;
〇: filter temporarily boosts when polymer melting squeezes out, but can steadily extrusion resin;
△: the pressure of filter slowly rises when polymer melting squeezes out, can not extrusion resin steadily in the long term;
×: the pressure of filter steeply rises when polymer melting squeezes out, and extrusion resin is unable in the short time.
(7) refractive index of thickness direction
The Abbe refractometer with sodium D-line (589nm) for light source is used, the refraction of thickness direction is measured at 23 DEG C, 65%RH
Rate (Nz).The refractive index of thickness direction is higher to mean that strand is orientated along film surface direction.
(8) coarse agglutinating particle number
For film sample, using universal projector, amplify 20 times using transillumination, to 1m2Have contained in area
There is the granule number of 25 μm or more maximum lengths to be counted.
(9) voidage
Film through-thickness and width direction are cut off with slicer, for section, (strain) Hitachi's system is used to scan electricity
Sub- microscope S-4700 observes the porous silica silicon particle on section in film and the sky around them under 20000 times
Gap finds out the diameter of the section of each particle and the film surface direction of each circumgranular gap section, presses for 10 particles
The voidage of each particle is calculated according to following formula;
Voidage=((circumgranular aperture diameter-partial size)/circumgranular aperture diameter) × 100
For 10 particles, the average value of voidage is calculated as average void fraction, is evaluated substantially free in film
Gap or substantial tight;
〇: substantial tight (average void fraction is 30% or less)
△: substantial tight (average void fraction is greater than 30% and is 50% or less)
×: substantially there is gap (average void fraction is greater than 50%).
(10) surface roughness (Ra and Rz)
Using non-contact 3-D roughmeter (small slope studies made, ET-30HK), swashed with the semiconductor of wavelength 780nm
Light, 1.6 μm of beam diameter of light contact pilotage, in measured length (Lx) 1mm, 2 μm of sampling interval, cutter size (cut-off)
100 0.25mm, 10,000 times of thickness direction enlargement ratio, 200 times of horizontal magnification multiplying power, number of scanning lines (therefore, measurements of Y-direction
Length Ly=0.2mm) under conditions of measure film surface protrusion distribution.It, will when indicating the roughness curved surface with Z=f (x, y)
Centerline average surface roughness (Ra, unit: nm) by the resulting value of following formula as film.
[mathematical expression 1]
。
In addition, by the resulting film surface of above-mentioned Ra protrusion distribution in, from the higher position of peak (Hp) take 5 points and
It takes at 5 points from the lower of paddy (Hv), finds out 10 mean roughness (Rz, unit: nm) according to the following formula.
[mathematical expression 2]
。
(11) windability
In the manufacturing process of film, film is rolled up to the volume of 6000m with 550mm width, 100m/ minutes speed
Shape is rolled situation, the appearance of volume according to it, is evaluated according to following standard;
A: the winding form of the even surface roughness of film surface entirety, volume is good
B: due to the influence of the coarse agglutinating particle in film, there is 1 pimple more than and less than 5 in the surface of volume
(convex protuberance), substantially well
C: there are many coarse agglutinator quantity in film, and 5 or more pimples (convex protuberance), appearance occurs in the surface of volume
It is bad
D: the film end face offset rolled up, winding form are bad.
(12) dielectric breakdown voltage (BDV) and deviation
Using resulting Biaxially oriented film (stretching membrane sample), according to what is recorded in Japanese Industrial Standards JIS specification C2151
Plate electrode method in DC test is carried out using the electric Co. Ltd. system ITS-6003 of Tokyo essence with the rate of rise of 0.1kV/sec
Measurement, voltage when puncturing is measured as dielectric breakdown voltage.Measurement carries out n=50 times, and average value is dielectric breakdown
Voltage, standard deviation are the deviation of dielectric breakdown voltage.It should be noted that at room temperature progress of the measurement at 25 DEG C.
(13) resistance to scraping
Film is cut into 1/2 inch of width, length 400mm along its length, makes to cut using film nigration machine
Film moves in stainless steel guide pin (surface roughness: Ra 40nm), with movement speed 20mm/ seconds round-trip 200mm away from
From (90 ° of circumvolution angle, outlet side tension 50g) twice.After movement, with Hitachi scanning electron microscope S-4700 at 100 times
Under, the adhesion amount of the guide pin contact surface in film contacts portion and film for guide pin observation particle, according to following standard into
Row determines.The accumulation width of the particle of scraping is smaller, and resistance to scraping is more excellent,
〇: less than 0.20mm
△: 0.20mm more than and less than 0.50mm
×: 0.50mm or more.
(14) resistance to blocking
Film is cut into the square of side length 100mm, the film cut overlapping is made into 20 μm of overall thickness or more (single sheet of thin
Film with a thickness of using 1 at 20 μm or more), be made with the aluminium foil of identical size each 1 laminated body clipped up and down.Use hot pressing
Machine is thermally compressed the laminated body.Crimping condition is 125 DEG C of pressed temperature, moulding pressure 5MPa, pressing time 30 minutes.Pressure
It after connecing, will carry out being heat-treated for 30 minutes at laminated body in an oven 150 DEG C, measure the film and aluminium foil of laminated body after cooling
Peeling force.The measurement of peeling force uses cupping machine, is measured under conditions of tensile speed 300mm/min, according to survey
Determine result according to following standard determination adhesive,
〇: almost removing naturally or Average peel force is 1.0mN/mm or less;
△: focal adhesion, but Average peel force is greater than 1.0mN/mm and is 3.0mN/mm or less;
×: whole adhesions, Average peel force are greater than 3.0mN/mm.
(15) the DBA value (adsorbance of di-n-butyl amine) of porous silica silicon particle
Sample 250mg at 105 DEG C of precision weighing after drying 2 hours, is added the 1/500N-DBA solution of 50ml thereto
(petroleum ether solvent) is placed 2 hours at 20 DEG C.Chloroform 5ml is added into its supernatant 25ml, crystal violet indicator 2 ~ 3 drips, use
1/100N- perchloric acid solution (acetic anhydride solvent), which is titrated to purple, becomes blue, and titration value at this time is as Aml.It is additionally carried out
Blank test calculates DBA value as Bml according to the following formula,
DBA value (mM/kg)=80 (A-B) f
Wherein, f is the titer of 1/100N- perchloric acid solution
(referring to R.Meyer;Kautschuku.Gummi.,7[8],180-182(1954)).
[embodiment 1]
(the silicone oil attachment of porous silica silicon particle is handled)
For porous silica silicon particle, (average grain diameter=2.7 μm, pore volume=1.5ml/g, are averaged at compression ratio=66%
Aperture=10nm) 100 mass parts, with spraying spraying silicone oil (SHIN-ETSU HANTOTAI's シ リ コ ー Application system, linear dimethyl polysiloxane, KF-96-
100CS) 1 mass parts are then placed in mixing machine and are stirred.
(processing of the melting mixing of resin material and porous silica silicon particle)
The double-screw mixing with gas vent is made using Kobe Steel's (strain) at resin input port and 2 with vacuum vent holes
It is provided with the feeding blade of rotor disk at 2 (rotor disk) on refining extruder KTX-46 and returns to blade and then is rotating
The downstream side of scraping plate part is configured with configured with kneading disk, in the downstream side of kneading disk with reversed transmission full thread spiral shell
The equipment of the resistance portion of bar.By resin input port, using 30 mass parts as poly- (2, the 6- dimethyl-of thermoplasticity noncrystalline resin Y
Isosorbide-5-Nitrae-phenylene) ether (intrinsic viscosity measured in chloroform is 0.32dl/g, glass transition temperature is 210 DEG C) and 70 mass
Part is 3.0 × 10 as the weight average molecular weight of polystyrene resin5And it uses13C-NMR measurement is advised between observing almost
The polystyrene of structure, the 0.1 mass parts above-mentioned porous silica silicon particle that is attached with silicone oil total relative to these resins, 2
Pentaerythrite four [3- (3,5- di-tert-butyl-hydroxy phenyl) the propionic ester] (Ciba of mass parts as antioxidant (C1)
Specialty Chemicals corporation: trade name IRGANOX1010,120 DEG C of fusing point, 335 DEG C of pyrolysis temperature) press above-mentioned ratio
Example mixing dispersion forms mixture, which is put into 35 mass parts/Hr feed speed from resin input port, with machine barrel
270 DEG C of temperature, screw speed 250rpm are by die hole melting extrusion at item (strand) shape.Then, with cooling bath that resin is cooling
Afterwards, it is cut with pelleter, obtains the resin combination fragment of major diameter about 4mm, minor axis about 4mm, length about 3mm.
(films of alignment films)
Resulting resin combination is 7 hours dry at 120 DEG C, it is then fed into extruder, is carried out at 300 DEG C
Melting is cooled and solidified on the curtain coating drum (casting drum) for being cooled to 50 DEG C, is made after die slot (die slit) extrusion
Non-stretched.
By this non-stretched, (mechanical axis direction) stretches 3.5 times, after being then directed into stenter along longitudinal direction at 140 DEG C, edge
Laterally (direction vertical with mechanical axis direction and thickness direction) stretches 4.5 times.At this point, stretched portion is divided into 4 regions,
Cross directional stretch speed is 5000%/minute.In addition, temperature stretching in the transverse direction is also divided into 4 stages, the temperature of first stage is
126 DEG C, the temperature of terminal stage be 145 DEG C.Then, 9 seconds heat fixations are carried out at 250 DEG C, and then in the phase for being cooled to 180 DEG C
Between transversely carry out 2% relaxation processes, obtain 2.5 μm of thickness Biaxially oriented film and wound into rolls.The characteristic of gained film is shown
In table 1.
[embodiment 2 ~ 20, comparative example 1 ~ 7]
Other than changing according to the record of table 1 ~ 3, operation similarly to Example 1 is repeated.Embodiment institute
Alignment films evaluation result is shown in table 1 and 2, alignment films obtained by comparative example evaluation result is shown in table in 3.
[table 1]
。
[table 2]
。
[table 3]
。
Porous silica in table 1 ~ 3 refers to that porous silica silicon particle, spherical organic silicon refer to cross-linked silicone tree
Rouge particle, non-porous silica refer to spherical silica particles.Irg1010 in table 1 refer to pentaerythrite four [3- (3,
5- di-tert-butyl-hydroxy phenyl) propionic ester] (Ciba Specialty Chemicals corporation: trade name
IRGANOX1010), Irg1098 refers to N, the bis- 3- of N '-(3 ' 5 '-di-t-butyls -4 '-hydroxy phenyl) propiono hexa-methylene two
Amine (Ciba Specialty Chemicals corporation: trade name IRGANOX1098), Irg565 refer to bis- (the just pungent sulphur of 2,4-
Base) -6- (4 '-hydroxyl -3,5- di-tert-butyl amido) -1,3,5- triazine (Ciba Specialty Chemicals corporation:
Trade name IRGANOX565).PPE in table 1 and 2 refers to that poly- (2,6- dimethyl -1,4- phenylene) (what is measured in chloroform consolidates ether
Having viscosity is 0.32dl/g, glass transition temperature is 210 DEG C), PC refer to bisphenol A polycarbonate (light petrochemistry system out,
Light polycarbonate A300, glass transition temperature are 145 DEG C out).In addition, in average grain diameter column in table 3 in film, "-※ "
Refer to that the agglutination of particle is more, stops the measurement of average grain diameter.
[synthesis example 1]
The sodium silicate aqueous solution of 22wt% is reacted with the aqueous sulfuric acid of 37wt% using mixing nozzle, obtains silica
The hydrosol.Silica hydrosol is subjected to gelation in about 7 minutes, obtains silica hydrogel.By the silica water-setting
After glue coarse powder is broken to diameter about 10mm, 5 hours hydro-thermal process are carried out under conditions of 90 DEG C, pH9.0, are then washed.Then, into
The 1st process of row, that is, it uses vibrated fluidized bed (central chemical industry machine corporation, trade name " vibrational fluidized bed device VUA-15 type "),
Silica hydrogel after washing is 60 minutes dry, obtain the dry silica to water content 7%.Then, the 2nd is carried out
Process, that is, add water in Xiang Jinhang dry silica, be adjusted to the silica of water content 37%.Then it carries out
3rd process, that is, use vibra fluidized bed drying 2 hours again, obtain the gelation silica of water content 1%.Use air-flow powder
Broken machine carries out pulverization process to the silica after the drying, and resulting silica 1 is added in vibrated fluidized bed for 00 part,
Lateral dominance dehumidifying after air carries out vibratory liquefaction side be sprayed 12 parts of n-octytriethoxysilane carry out fluidize mix 30 minutes.
Then, it is put into rapidly in the constant temperature and humidity cabinet for keeping 25 DEG C of temperature, humidity 90%, is kept for 72 hours two after being surface-treated
Silica powder.Again, airslide disintegrating mill is used to carry out pulverization process in order to disperse silica.Gained silicon dioxide powder
The characteristic value of body 1 (porous silica silicon particle 1) is shown in Table 4.
[synthesis example 2,3,5]
It other than adjusting average grain diameter, carries out similarly handling with synthesis example 1 in addition to changing airslide disintegrating mill condition.Gained
The characteristic value of silicon-dioxide powdery 2,3,5 is shown in Table 4.
[synthesis example 4]
Other than changing added n-octytriethoxysilane amount, similarly handle with synthesis example 1.Gained
The characteristic value of silicon-dioxide powdery 4 is shown in Table 4.
[synthesis example 6]
In order to which small particle is made, after the processing of first time airslide disintegrating mill, 10% slurry is made in silica with distilled water
Material increases the case of wet attrition process that (DYNO-MILL, capacity 5L) is sanded, and in addition to this carries out similarly handling with synthesis example 1.
The characteristic value of gained silicon-dioxide powdery 6 is shown in Table 4.If the too small silicon-dioxide powdery average grain diameter is 0.3 μm, can not
Measure compression ratio.
[synthesis example 7]
Other than the surface treatment of not firm application n-octytriethoxysilane, similarly handle with synthesis example 1.
The characteristic value of gained silicon-dioxide powdery 7 is shown in Table 4.
[reference example 1]
The double-screw mixing with gas vent is made using Kobe Steel's (strain) at resin input port and 2 with vacuum vent holes
Be provided with the feeding blade of rotor disk at 2 on refining extruder KTX-46 and return blade so that rotor segment portion close to
Downstream side is configured with the resistance portion with reversed transmission full flight screw configured with kneading disk, in the downstream side of kneading disk
Equipment.Mitsubishi work of 40 mass parts of investment as polyphenylene oxide resin (hereinafter sometimes referred to simply as PPE) is mixed from resin input port
Engineering plastics Iupiace PX-100L (Tg210 DEG C), 55.8 mass parts are (following as the polystyrene resin of syndiotactic structure
Sometimes referred to simply as SPS) go out that light is emerging to produce XAREC 60ZC processed, Ciba Specialty of 0.2 mass parts as antioxidant
Chemicals corporation IRGANOX 1010.
In turn, 4 mass parts are added as more from the middle section of twin-screw mixer extruder (downstream part of kneading disk)
The above-mentioned silicon-dioxide powdery 1 of hole silica dioxide granule, carries out mixing dispersion.At this point, with mixture supply amount be 35 mass parts/
Hr, 270 DEG C of barrel temperature, screw speed 250rpm, into strips by die hole melting extrusion.Then, with cooling bath that resin is cooling
Afterwards, it is cut with pelleter, obtains the resin combination fragment of major diameter about 4mm, minor axis about 4mm, length about 3mm.It is resulting
Resin combination fragment is shown in Table 4.
[reference example 2 ~ 5, with reference to comparative example 1 ~ 3]
The use ratio of porous silica silicon particle, PPE, SPS used according to table 3 record, in addition to this with reference
Example 1 is similarly obtained resin combination fragment.It is shown in Table 4 together.
[reference example 6]
Other than porous silica silicon particle, the spherical organic silicon resin particle 4 for the use of average grain diameter B being also 0.3 μm
In addition to this mass parts, the use ratio of SPS are similarly obtained resin combination fragment with reference example 1 according to the record of table 1.One
And it is shown in Table 4.
[referring to comparative example 4]
Porous silica used is replaced by 2.0 μm of spherical silica particles (non-porous) using average grain diameter B
In addition to this silicon particle is similarly obtained resin combination fragment with reference example 1.It is shown in Table 4 together.
[table 4]
。
[embodiment 21]
By resin combination fragment (master batch chips A), polyphenylene oxide resin (Mitsubishi Engineering-Plastics system obtained in reference example 1
Iupiace PX-100L), the polystyrene resin of syndiotactic structure (light is emerging out produces XAREC 60ZC processed), in polyphenylene oxide resin
Contain 5 weight % Ciba Specialty as antioxidant in (Mitsubishi Engineering-Plastics Iupiace PX-100L)
After the master batch chips of Chemicals corporation IRGANOX 1010 are separately dried, to obtain the ratio of the film formed recorded in table 5
They are mixed and are supplied in extruder by example, are melted at 300 DEG C, after die slot extrusion, are being cooled to 50 DEG C of curtain coating drum
On cooled and solidified, be made non-stretched.It should be noted that since swarming dissipates antioxidant in the middle part of the film-forming process of film,
Therefore the oxidation preventive content in raw mixture is adjusted to slightly volume, so that the content of antioxidant in the film reaches 1 weight
Measure %.
By this non-stretched, (mechanical axis direction) stretches 3.5 times, after being then directed into stenter along longitudinal direction at 140 DEG C, edge
Laterally (direction vertical with mechanical axis direction and thickness direction) stretches 4.5 times.At this point, lateral tensile speed be 5000%/point
Clock, temperature stretching in the transverse direction are divided into 4 stages, and the temperature of first stage is 126 DEG C, the temperature of terminal stage is 145 DEG C.So
Afterwards, 9 seconds heat fixations are carried out at 250 DEG C, and then transversely carry out 2% relaxation processes during being cooled to 180 DEG C, obtain thickness
The Biaxially oriented film and wound into rolls of 2.5 μm of degree.The characteristic of gained film is shown in Table 4.
[embodiment 22 ~ 24,26,29,30,33 ~ 37, comparative example 8 ~ 10,12,13]
Using the master batch chips as documented by table 5 ~ 7, by polyphenylene oxide resin, polycarbonate resin, syndiotactic structure polyphenyl
Vinylite and master batch chips containing antioxidant are used in combination, so that the group of gained film becomes shown in the record of table 5 ~ 7,
In addition to this repeat operation similarly to Example 21.Gained stretched film evaluation result is shown in table in 5 ~ 7.It should say
It is bright, in embodiment 25,26, as the master batch chips containing antioxidant, tied using containing rule between 5 weight % IRGANOX 1010
The polystyrene resin of structure (light is emerging out produces XAREC 60ZC processed).
[embodiment 25,27,28,31,32, comparative example 11]
By polyphenylene oxide resin, the polystyrene resin of syndiotactic structure, porous silica silicon particle and antioxidant with
Reference example 1 is equally mixed, so that as shown in the record of table 5 ~ 7, it is broken to obtain resin combination first for the composition of gained film
Piece.Gained resin combination is dry, it is filmed to obtain biaxially-stretched film similarly to Example 21.The evaluation of gained stretched film
As a result it is shown in table 5 ~ 7.
[table 5]
。
[table 6]
。
[table 7]
。
PC in table 5 ~ 7 is that (light petrochemistry produces light polycarbonate A300 to bisphenol A polycarbonate out, vitrifying turns
Temperature is 145 DEG C).
In addition, the Irg1010 in table 5 ~ 7 refers to [3- (3, the 5- di-tert-butyl-hydroxy phenyl) propionic acid of pentaerythrite four
Ester] (Ciba Specialty Chemicals corporation: trade name IRGANOX1010), Irg1098 refers to N, the bis- 3- (3 ' of N '-
5 '-di-t-butyls -4 '-hydroxy phenyl) propiono hexamethylene diamine (Ciba Specialty Chemicals corporation: quotient
Name of an article IRGANOX1098), Irg565 refers to bis- (just pungent the sulfenyl) -6- (4 '-hydroxyl -3,5- di-tert-butyl amido) -1 of 2,4-,
3,5- triazine (Ciba Specialty Chemicals corporation: trade name IRGANOX565).
Industrial applicability
The alignment films of the invention for first, resistance to scraping and windability excellent, therefore can be especially suitable for thin-film capacitor
The basement membrane of device.
In addition, the stretched film of the invention for second, the dispersibility of particle aperture diameter that is excellent, and being generated by particle
It is small, therefore resistance to scraping, operability, dielectric breakdown characteristic (dielectric breakdown voltage and its deviation) are excellent, may be particularly useful for film
Capacitor is used.
Claims (13)
1. stretched film, which is characterized in that the stretched film includes resin combination, which contains the benzene second of syndiotactic structure
The porous particle that alkene based polymer and average grain diameter are 0.5 ~ 5.0 μm, on the basis of the quality of the resin combination, porous particle
Content be 0.01 mass % or more and 3 mass % ranges below,
The stretched film meets any one of following (1) or (2):
(1) resin combination contains silicone oil, and on the basis of the quality of the porous particle, the content of silicone oil is the model of 0.1 ~ 3 mass %
It encloses;Or
(2) porous particle be average grain diameter A be 0.5 ~ 5 μm, DBA value is 200 mMs/kg porous silica below
Grain.
2. stretched film according to claim 1, which includes resin combination, which advises knot between containing
The styrenic of structure, the porous particle and silicone oil that average grain diameter is 0.5 ~ 5.0 μm,
On the basis of the quality of the resin combination, the content of porous particle is 0.01 mass % or more and 3 mass % models below
It encloses,
On the basis of the quality of the porous particle, the content of silicone oil is the range of 0.1 ~ 3 mass %.
3. stretched film according to claim 1, which includes resin combination, which advises knot between containing
The polystyrene resin and average grain diameter A of structure are 0.5 ~ 5 μm, DBA value is 200 mMs/kg porous silica below
Silicon particle,
On the basis of resin combination amount of substance, the content of the porous silica silicon particle is 0.01 ~ 3 mass %.
4. stretched film according to any one of claim 1 to 3, wherein resin combination contains thermoplasticity noncrystalline resin.
5. stretched film according to any one of claim 1 to 3, wherein relative to the quality of film, containing 5 mass % with
Upper and 48 mass % thermoplasticity noncrystalline resin below.
6. stretched film according to any one of claim 1 to 3, wherein the refractive index of thickness direction be 1.575 or more and
1.635 following.
7. stretched film according to any one of claim 1 to 3, wherein relative to the quality of film, contain 0.1 mass %
Above and 5 mass % antioxidants below.
8. stretched film according to claim 7, wherein the pyrolysis temperature of the antioxidant is 250 DEG C or more.
9. stretched film according to any one of claim 1 to 3, wherein porous particle or porous silica silicon particle
The range that compression ratio is 20 ~ 90%.
10. stretched film according to any one of claim 1 to 3, wherein the stretched film is with 0.01 mass % or more and 3
It is 0.01 μm of particle more than and less than 0.5 μm that quality % range below, which contains average grain diameter,.
11. stretched film according to any one of claim 1 to 3, wherein 25 μm of maximum length or more contained in film
Coarse agglutinating particle quantity be 10/m2Below.
12. stretched film according to any one of claim 1 to 3, wherein porous particle or porous contained in film
The voidage that generated following formula (1) indicates around silica dioxide granule is 50% or less:
Voidage=((circumgranular aperture diameter-partial size)/circumgranular aperture diameter) × 100 (1)
(1) voidage=((circumgranular aperture diameter-partial size)/circumgranular aperture diameter) × 100.
13. stretched film according to any one of claim 1 to 3, is used for capacitor.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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JP2014132816A JP6367620B2 (en) | 2014-06-27 | 2014-06-27 | Stretched film |
JP2014-132816 | 2014-06-27 | ||
JP2014132815A JP6309838B2 (en) | 2014-06-27 | 2014-06-27 | Oriented film |
JP2014-132815 | 2014-06-27 | ||
PCT/JP2015/068369 WO2015199184A1 (en) | 2014-06-27 | 2015-06-25 | Stretched film |
Publications (2)
Publication Number | Publication Date |
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CN106459448A CN106459448A (en) | 2017-02-22 |
CN106459448B true CN106459448B (en) | 2019-07-30 |
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WO (1) | WO2015199184A1 (en) |
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CN116710507A (en) * | 2020-12-25 | 2023-09-05 | 旭化成株式会社 | Resin raw material composition for molding, resin raw material composition for microporous film, and method for producing same |
Citations (1)
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CN1256998A (en) * | 1998-12-16 | 2000-06-21 | 德山株式会社 | Bidirection stretching polyolefine film and making method thereof |
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JPH0939088A (en) * | 1995-08-01 | 1997-02-10 | Fuji Photo Film Co Ltd | Manufacture of polystyrene film |
JPH0939066A (en) * | 1995-08-01 | 1997-02-10 | Fuji Photo Film Co Ltd | Manufacture of polystyrene film and unoriented film to be used therefor |
JP5771068B2 (en) * | 2011-05-26 | 2015-08-26 | 帝人株式会社 | High insulation film |
WO2012147777A1 (en) * | 2011-04-26 | 2012-11-01 | 帝人株式会社 | High-insulating film |
JP5684873B2 (en) * | 2013-08-30 | 2015-03-18 | 帝人株式会社 | High insulation film |
JP2015048462A (en) * | 2013-09-04 | 2015-03-16 | 帝人株式会社 | Resin composition |
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2015
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CN1256998A (en) * | 1998-12-16 | 2000-06-21 | 德山株式会社 | Bidirection stretching polyolefine film and making method thereof |
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