CN106449956A - LED high thermal conductivity metal substrate and preparation technology thereof - Google Patents
LED high thermal conductivity metal substrate and preparation technology thereof Download PDFInfo
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- CN106449956A CN106449956A CN201611103473.XA CN201611103473A CN106449956A CN 106449956 A CN106449956 A CN 106449956A CN 201611103473 A CN201611103473 A CN 201611103473A CN 106449956 A CN106449956 A CN 106449956A
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- copper
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- baseplate part
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 74
- 239000002184 metal Substances 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 title claims abstract description 62
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 238000005516 engineering process Methods 0.000 title claims abstract description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 75
- 229910052802 copper Inorganic materials 0.000 claims abstract description 61
- 239000010949 copper Substances 0.000 claims abstract description 61
- 239000011324 bead Substances 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 15
- 239000011889 copper foil Substances 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 239000011888 foil Substances 0.000 claims description 10
- 239000010935 stainless steel Substances 0.000 claims description 10
- 229910001220 stainless steel Inorganic materials 0.000 claims description 10
- 239000005030 aluminium foil Substances 0.000 claims description 9
- 238000009713 electroplating Methods 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- -1 polyethylene Polymers 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000010297 mechanical methods and process Methods 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000002033 PVDF binder Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229940058401 polytetrafluoroethylene Drugs 0.000 claims description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 abstract description 6
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 abstract 3
- 238000010924 continuous production Methods 0.000 abstract 1
- 238000005304 joining Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- NIFIFKQPDTWWGU-UHFFFAOYSA-N pyrite Chemical compound [Fe+2].[S-][S-] NIFIFKQPDTWWGU-UHFFFAOYSA-N 0.000 description 1
- 229910052683 pyrite Inorganic materials 0.000 description 1
- 239000011028 pyrite Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an LED high thermal conductivity metal substrate and a preparation technology thereof. The preparation technology comprises the following steps: (1) preparing a metal substrate with a substrate part and a raised part to be taken as a metal substrate layer, wherein the substrate part is flat, and the raised part extends upward from the substrate part and is raised; (2) on one surface, where the raised part is located, of the metal substrate layer, coating an insulating film in a single-sided way on the substrate part; (3) coating copper on one side, provided with the insulating film, of the substrate part of the metal substrate layer to form a copper layer; (4) corroding a conductor on the copper layer; and (5) electrocoppering on the surface of the conductor, so that an electrode pin of an LED lamp bead is fixed with the conductor of the copper layer. The preparation technology disclosed by the invention adopts raw materials which do not contain heavy metals respectively, thereby being environment-friendly; meanwhile, the raw materials are simple and can be easily obtained, and a production technology is easy to operate, thereby being applicable to continuous production; and the metal substrate prepared by adopting the preparation technology is applicable to the field of high power LEDs.
Description
Technical field
The present invention relates to a kind of LED high-thermal conductive metal base plate and its preparation technology.
Background technology
Generally, great power LED is used the materials such as sapphire, SiC, monocrystal silicon as substrate material.But due to sapphire
Thermal diffusivity poor, lead to produce LED service life shorter, seriously limit its range of application；And SiC substrate production cost is relatively
Height, also affects its commercial Application.Monocrystalline silicon production technical maturity, raw material is easy to get, and is now just progressively replacing former substrate material.
But going deep into it has been found that silicon has absorption to visible ray with research, and heat dispersion is also not satisfactory.
Also not good using traditional metal basal board radiating effect, the heat conduction path of metal basal board need to insulate through one layer
Layer, and the heat conductivity very little of general insulating barrier, can lead to the heat conduction velocity of LED lamp bead very slow, heat still can not be timely
Shed.Both made abroad to have and the insulating barrier heat conductivity in metal basal board had been improved, and made high-end metal basal board, but cost is relatively
High.
Content of the invention
Present invention aim to address the deficiencies in the prior art, one kind is provided to be used for LED high-thermal conductive metal base plate, structure is only
Ad hoc meter it is adaptable to great power LED field, rapid heat dissipation, long service life, environmental protection and production cost is relatively low, meet extensive work
The condition of industry application, target level of product quality meets EU criteria and Unite States Standard.
The present invention is achieved by the following technical solutions：
Metal substrate layer that a kind of LED high-thermal conductive metal base plate it is characterised in that include sets gradually from the bottom up, absolutely
Edge layer, layers of copper and LED lamp bead, also include copper electroplating layer, and described insulating barrier and layers of copper have the through hole running through up and down, described metal
Substrate layer includes baseplate part and lobe, and described baseplate part is located at below described insulating barrier, and in plate shaped, described lobe is from institute
State baseplate part to upwardly extend projection and stretch in described insulating barrier and the through hole of described layers of copper, the bottom of LED lamp bead is convex with described
The portion of rising contact, described layers of copper is provided with wire, described copper electroplating layer be located at the electrode pin of LED lamp bead and layers of copper wire it
On, and connect the electrode pin of LED lamp bead and the wire of described layers of copper.The convex of substrate can be passed through in the LED lamp bead bottom of the present invention
Outwards radiate in the portion of rising, LED high-thermal conductive metal base plate good heat conductivity is it is adaptable to great power LED field, long service life.
Preferably, the baseplate part of described metal substrate layer and lobe are integrally formed.
Further, described metal substrate layer is native gold, native silver, filtter gold, Copper Foil, nickel foil, aluminium foil or stainless steel foil.
The present invention also provides a kind of preparation technology of LED high-thermal conductive metal base plate it is characterised in that comprising the following steps：
(1) preparation has the metal basal board of baseplate part and lobe, and as metal substrate layer, described baseplate part is in flat board
Shape, described lobe upwardly extends projection from described baseplate part；
(2) there is in metal substrate layer the one side of lobe, one side coating dielectric film forms insulating barrier on baseplate part；
(3) baseplate part in metal substrate layer carries the side overlying copper formation layers of copper of dielectric film；
(4) corrode in layers of copper and wire；
(5) pass through electro-coppering on its surface, so that the electrode pin of LED lamp bead is fixed with the wire of layers of copper.
This preparation technology achieves the open Joining Technology of LED high-thermal conductive metal base plate, and the raw material of employing is all without weight
Metal, environmentally friendly.
Further, described metal substrate layer is native gold, native silver, filtter gold, Copper Foil, nickel foil, aluminium foil or stainless steel foil.
Further, dielectric film described in step (2) is silicon oxide film, silicon nitride film, pellumina, aluminium nitride film, gathers
Acid imide film, polyethylene film, PVDF membrane or poly tetrafluoroethylene.
Further, covering copper method described in step (3) is that large area covers copper or grid covers copper.
Further, corrode described in step (4) that the method for wire be Mechanical Method or electrochemical process.
Further, the method for electro-coppering described in step (5) is acid copper-plating, pulse copper facing or rotation copper facing.
Compared with prior art, the invention has the advantages that：
(1) environmental protection.The Joining Technology that the present invention provides, the raw material of employing is all without heavy metal, environmentally friendly；
(2) process is simple.The Joining Technology that the present invention provides, the raw material of employing is simple and easy to get, and simple production process is easy to
Operation, is suitable to continuous prodution；
(3) the LED electrode pin of the present invention is grown directly upon in the metal forming scribble High-heat-conductiviinsulation insulation material it is achieved that no
Solder connection, so can significantly improve the heat dispersion of great power LED, extend the service life of LED, can reduce substrate again
This, expand the application of LED；
(4) the LED high-thermal conductive metal base plate good heat conductivity that method of the present invention is obtained is it is adaptable to great power LED
Field, long service life, and production cost is relatively low, meets the condition of large-scale industrial application, target level of product quality meets European Union
Standard and Unite States Standard.
Brief description
Fig. 1 is the cross section structure schematic diagram of the LED high-thermal conductive metal base plate of embodiment 1；
Wherein, each reference represents and is meant that：
1- metal substrate layer, 11- baseplate part, 12- lobe, 2- insulating barrier, 3- layers of copper, 31- wire, 4-LED lamp bead,
41- electrode pin, 5- copper electroplating layer.
Specific embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are illustrated it will be appreciated that preferred reality described herein
Apply example to be merely to illustrate and explain the present invention, be not intended to limit the present invention.
Embodiment 1
The LED high-thermal conductive metal base plate of the present embodiment, its structure such as Fig. 1, including the Metal Substrate setting gradually from the bottom up
Flaggy 1, insulating barrier 2, layers of copper 3 and LED lamp bead 4, also include copper electroplating layer 5, and insulating barrier 2 and layers of copper 3 have run through up and down logical
Hole, metal substrate layer 1 includes baseplate part 11 and lobe 12, and baseplate part 11 is located at below insulating barrier 2, in plate shaped, lobe
12 upwardly extend projection from baseplate part 11 and stretch into insulating barrier 2 and the through hole of layers of copper 3, the bottom of LED lamp bead 4 and lobe 12
Contact, layers of copper 3 is provided with wire 31, and copper electroplating layer 5 is located on the electrode pin 41 of LED lamp bead and the wire 31 of layers of copper, and
Connect the electrode pin 41 of LED lamp bead and the wire 31 of layers of copper.Preferably, the baseplate part 11 of metal substrate layer and lobe 12 1
Body formed.Metal substrate layer can be any one in native gold, native silver, filtter gold, Copper Foil, nickel foil, aluminium foil or stainless steel foil.
Embodiment 2
With embodiment 1, metal substrate layer is Copper Foil to the metal substrate structure of the present embodiment.The LED high heat conduction of the present embodiment
Metal basal board, preparation technology is as follows：
Preparation has baseplate part 11 and the Copper Foil of lobe 12, and baseplate part 11 is in plate shaped, and lobe 12 is from baseplate part 11
Upwardly extend projection；There is in Copper Foil the one side of lobe, one side uniform coating alumina film layer on baseplate part 11, to improve
Its heat conductivity and insulating properties, then cover copper method implementation one side with large area thereon and cover copper, more rotten thereon with electrochemical process
Lose wire.Finally LED lamp bead is placed in the lobe of metal substrate layer, makes the bottom of LED lamp bead and the projection of Copper Foil
Portion 12 contacts, and electrode pin 41 rides on wire 31, then by way of acid copper plating, makes high-powered LED lamp and Copper Foil
Length is integral, and the open realizing LED high heat-conducting copper foil substrate connects.
Embodiment 3：
With embodiment 1, metal substrate layer is aluminium foil to the metal substrate structure of the present embodiment.The LED high heat conduction of the present embodiment
Metal basal board, preparation technology is as follows：
Preparation has baseplate part 11 and the aluminium foil of lobe 12, and baseplate part 11 is in plate shaped, and lobe 12 is from baseplate part 11
Upwardly extend projection；There is in aluminium foil the one side of lobe, one side uniformly coats appropriate polyethylene film layer on baseplate part 11,
To improve its heat conductivity and insulating properties, then cover copper method implementation one side with grid thereon and cover copper, then with Mechanical Method thereon
Etch wire.Finally LED lamp bead is placed in the lobe of metal substrate layer, makes the bottom of LED lamp bead and the convex of Copper Foil
Play portion 12 to contact so as to electrode pin 41 rides on wire 31, then by the copper-plated mode of electric rotating, make high-powered LED lamp
Integral with aluminium foil length, the open realizing LED high heat conduction aluminum foil substrate connects.
Embodiment 4
With embodiment 1, metal substrate layer is nickel foil to the metal substrate structure of the present embodiment.The LED high heat conduction of the present embodiment
Metal basal board, preparation technology is as follows：
Preparation has baseplate part 11 and the nickel foil of lobe 12, and baseplate part 11 is in plate shaped, and lobe 12 is from baseplate part 11
Upwardly extend projection；There is in nickel foil the one side of lobe, one side uniformly coats appropriate aluminium nitride film layer on baseplate part 11,
To improve its heat conductivity and insulating properties, then cover copper method implementation one side with large area thereon and cover copper, then existed with electrochemical process
Corrode thereon and wire.Finally LED lamp bead is placed in the lobe of metal substrate layer, makes bottom and the Copper Foil of LED lamp bead
Lobe 12 contact so as to electrode pin 41 rides on wire 31.Then, by way of pulse plating copper, make high-power
LED is integral with nickel foil length, and the open realizing LED high heat conduction nickel foil substrate connects.
Embodiment 5
With embodiment 1, metal substrate layer is stainless steel foil to the metal substrate structure of the present embodiment.The LED of the present embodiment is high
Heat-conducting metal substrate, preparation technology is as follows：
Preparation has baseplate part 11 and the stainless steel foil of lobe 12, and baseplate part 11 is in plate shaped, and lobe 12 is from substrate
Portion 11 upwardly extends projection；There is the one side of lobe in stainless steel foil, one side uniformly appropriate the gathering of coating on baseplate part 11
Tetrafluoroethene film layer, to improve its heat conductivity and insulating properties.Then cover copper method implementation one side with grid thereon and cover copper, then use
Electrochemical process is corroded thereon and wire.Finally LED lamp bead is placed in the lobe of metal substrate layer, makes LED lamp bead
Bottom is contacted so as to electrode pin 41 rides on wire 31 with the lobe 12 of Copper Foil.Then by the copper-plated mode of electric rotating,
Make high-powered LED lamp integral with stainless steel substrate length, the open realizing LED high heat conduction stainless steel substrate connects.
Embodiment 6
With embodiment 1, metal substrate layer is filtter gold to the metal substrate structure of the present embodiment.The LED height of the present embodiment is led
Thermometal substrate, preparation technology is as follows：
Preparation has baseplate part 11 and the filtter gold of lobe 12, and baseplate part 11 is in plate shaped, and lobe 12 is from baseplate part
11 upwardly extend projection；There is in filtter gold the one side of lobe, one side uniformly coats appropriate silicon nitride on baseplate part 11
Film layer, to improve its heat conductivity and insulating properties.Then cover copper method implementation one side with large area thereon and cover copper, then use Mechanical Method
Etch wire thereon.Finally LED lamp bead is placed in the lobe of metal substrate layer, makes bottom and the copper of LED lamp bead
The lobe 12 of paper tinsel contacts so as to electrode pin 41 rides on wire 31, then by way of acid copper plating, makes high-power
LED is integral with filtter gold length, and the open realizing LED high heat conduction pyrite foil substrate connects.
The invention is not limited in above-mentioned embodiment, if the various changes to the present invention or deformation are without departing from the present invention
Spirit and scope, if these are changed and within the scope of deformation belongs to claim and the equivalent technologies of the present invention, then this
Bright it is also intended to comprise these and changes and deform.
Claims (9)
1. a kind of LED high-thermal conductive metal base plate is it is characterised in that include metal substrate layer, the insulation setting gradually from the bottom up
Layer, layers of copper and LED lamp bead, also include copper electroplating layer, described insulating barrier and layers of copper have the through hole running through up and down, described Metal Substrate
Flaggy includes baseplate part and lobe, and described baseplate part is located at below described insulating barrier, and in plate shaped, described lobe is from described
Baseplate part upwardly extends projection and stretches in described insulating barrier and the through hole of described layers of copper, the bottom of LED lamp bead and described projection
Portion contacts, and described layers of copper is provided with wire, and described copper electroplating layer is located on the electrode pin of LED lamp bead and the wire of layers of copper,
And connect the electrode pin of LED lamp bead and the wire of described layers of copper.
2. LED high-thermal conductive metal base plate according to claim 1 is it is characterised in that the baseplate part of described metal substrate layer
It is integrally formed with lobe.
3. LED high-thermal conductive metal base plate according to claim 1 is it is characterised in that described metal substrate layer is native gold, silver
Paper tinsel, filtter gold, Copper Foil, nickel foil, aluminium foil or stainless steel foil.
4. a kind of preparation technology of LED high-thermal conductive metal base plate is it is characterised in that comprise the following steps：
(1) preparation has the metal basal board of baseplate part and lobe, and as metal substrate layer, described baseplate part is in plate shaped, institute
State lobe and upwardly extend projection from described baseplate part；
(2) there is in metal substrate layer the one side of lobe, one side coating dielectric film forms insulating barrier on baseplate part；
(3) baseplate part in metal substrate layer carries the side overlying copper formation layers of copper of dielectric film；
(4) corrode in layers of copper and wire；
(5) pass through electro-coppering on its surface, so that the electrode pin of LED lamp bead is fixed with the wire of layers of copper.
5. the preparation technology of LED high-thermal conductive metal base plate according to claim 4 is it is characterised in that described metal substrate layer
It is native gold, native silver, filtter gold, Copper Foil, nickel foil, aluminium foil or stainless steel foil.
6. the preparation technology of LED high-thermal conductive metal base plate according to claim 4 is it is characterised in that described in step (2)
Dielectric film is silicon oxide film, silicon nitride film, pellumina, aluminium nitride film, polyimide film, polyethylene film, polyvinylidene fluoride
Film or poly tetrafluoroethylene.
7. the preparation technology of LED high-thermal conductive metal base plate according to claim 4 is it is characterised in that described in step (3)
Covering copper method is that large area covers copper or grid covers copper.
8. the preparation technology of LED high-thermal conductive metal base plate according to claim 4 is it is characterised in that described in step (4)
Corrode that the method for wire be Mechanical Method or electrochemical process.
9. the preparation technology of LED high-thermal conductive metal base plate according to claim 4 is it is characterised in that described in step (5)
The method of electro-coppering is acid copper-plating, pulse copper facing or rotation copper facing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201611103473.XA CN106449956A (en) | 2016-12-05 | 2016-12-05 | LED high thermal conductivity metal substrate and preparation technology thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611103473.XA CN106449956A (en) | 2016-12-05 | 2016-12-05 | LED high thermal conductivity metal substrate and preparation technology thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459142A (en) * | 2019-08-19 | 2019-11-15 | 厦门福相科技有限公司 | A kind of transparence display mould group and its manufacturing method |
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| CN202363517U (en) * | 2011-12-01 | 2012-08-01 | 珠海全宝电子科技有限公司 | Aluminium base plate heat dissipation mechanism used for LED (light-emitting diode) |
| JP2016197668A (en) * | 2015-04-03 | 2016-11-24 | 大日本印刷株式会社 | Flexible multilayer circuit board for led element, and led dot matrix display device using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110459142A (en) * | 2019-08-19 | 2019-11-15 | 厦门福相科技有限公司 | A kind of transparence display mould group and its manufacturing method |
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