CN106449682A - Method for reducing white pixel of backside CMOS (Complementary Metal Oxide Semiconductor) image sensor - Google Patents
Method for reducing white pixel of backside CMOS (Complementary Metal Oxide Semiconductor) image sensor Download PDFInfo
- Publication number
- CN106449682A CN106449682A CN201610884399.3A CN201610884399A CN106449682A CN 106449682 A CN106449682 A CN 106449682A CN 201610884399 A CN201610884399 A CN 201610884399A CN 106449682 A CN106449682 A CN 106449682A
- Authority
- CN
- China
- Prior art keywords
- white pixel
- cmos image
- ultraviolet light
- wafer
- preset time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000000295 complement effect Effects 0.000 title abstract description 10
- 239000004065 semiconductor Substances 0.000 title abstract description 8
- 229910044991 metal oxide Inorganic materials 0.000 title abstract description 5
- 150000004706 metal oxides Chemical class 0.000 title abstract description 5
- 239000010410 layer Substances 0.000 claims abstract description 44
- 239000011229 interlayer Substances 0.000 claims abstract description 17
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 238000004806 packaging method and process Methods 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract 2
- 239000011241 protective layer Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention provides a method for reducing a white pixel of a backside CMOS (Complementary Metal Oxide Semiconductor) image sensor. The method comprises the steps of accomplishing a technology of a pixel region of the CMOS image sensor on a wafer, depositing an interlayer dielectric layer on the surface of the pixel region, and performing at least one ultraviolet irradiation on the surface of the wafer after deposition of a protective layer of the wafer and before packaging of the wafer to reduce the white pixel of the backside CMOS image sensor. Therefore, the method achieves purposes of reducing dark current and reducing generation of the white pixel by removing trapped charge in a silicon nitride dielectric layer.
Description
Technical field
The present invention relates to IC manufacturing field, more particularly to a kind of reduction back-illuminated cmos image sensors white pixel
Method.
Background technology
Cmos image sensor relies on its low-power consumption, low cost, small size, can random read take, integrated level height etc. is a series of
Advantage has become as the main product in imageing sensor market.Back-illuminated type complementary metal semiconductor image sensor (Backside
Illuminated CMOS Image Sensor, BSI CIS) be under conditions of Pixel Dimensions constantly reduce, based on traditional
Front illuminated type (Frontside Illuminated CMOS Image Sensor, FSI CIS) improved dot structure, its
Great advantage is exactly that the metal line Wei Yu optical filter and photodiode region between and interlayer dielectric layer are moved to the another of chip
Side, such light directly can inject photodiode region from " back side ", so as to be obviously improved quantum efficiency.
Refer to the pixel region structural representation of Fig. 1, Fig. 1 for CIS in prior art.As shown in figure 1, the complementary metal
The dot structure of oxide-semiconductor devices, including substrate 10, epitaxial layer 20, SiO2Dielectric layer between interlayer dielectric layer 31, SiN layer
32nd, transfer pipe 40, photodiode 50 and clamper photodiode 60.Wherein, epitaxial layer 20, SiO231 He of interlayer dielectric layer
Between SiN layer, dielectric layer 32 is formed on substrate 10；Photodiode 50 and clamper photodiode 60 are formed on epitaxial layer 20.
Clamper photodiode 60 is formed on photodiode 50, SiO2Between interlayer dielectric layer 31 and SiN layer, dielectric layer 32 is formed at
On whole CMOS device.
From the above, it is seen that being formed with the silicon chip of complementary metal oxide semiconductor device during flow
Interlayer dielectric layer is generally needed, comprising the silicon nitride layer (SiN) for easily capturing electric charge in these interlayer dielectric layers.These quilts
The accumulation of capture makes the depletion region of light sensitive diode expand to Si/SiO to changing internal electric field together2Interface, makes
The clamper photodiode (Pinned Photodiode, referred to as PPPD) on wafer (Wafer) surface cannot isolated insulation layer with
The interfacial state on wafer (Wafer) surface, causes light sensitive diode (Photodiode) also produce electricity under conditions of no light
Stream, will produce the white point of a visible luminescent, and now other portions of pixel region when dark current is sufficiently high in regional area
It is entirely dark to divide, and this pixel is referred to as white pixel.
The image quality of the generation strong influence device of white pixel, therefore, those skilled in the art are badly in need of finding one kind
The method that capture electric charge in silicon nitride medium layer can be removed, so as to reduce dark current, reduces the generation of white pixel.
Content of the invention
In order to overcome problem above, the present invention is intended to provide a kind of side for reducing back-illuminated cmos image sensors white pixel
Method, the method can remove the electric charge of capture in back-illuminated type complementary metal semiconductor image sensor dielectric layer, so as to reduce
Dark current, reduces the generation of white pixel.
For achieving the above object, technical scheme is as follows：
The present invention provides a kind of method for reducing back-illuminated cmos image sensors white pixel, and which comprises the steps：
Step S1：After wafer completes the technique of cmos image sensor pixel region, the pixel region surface is deposited
Interlayer dielectric layer；
Step S2：After the completion of wafer with protection layer deposition, and before the wafer level packaging, the crystal column surface is entered
Capable ultraviolet light at least one times, to reduce back-illuminated cmos image sensors white pixel.
Preferably, described ultraviolet light is that four times, step S2 is specifically included：
Step S21：First time ultraviolet light is carried out to the crystal column surface；
Step S22：After standing the first Preset Time of the wafer, second ultraviolet light is carried out to crystal column surface；
Step S23：After standing the second Preset Time of the wafer, third time ultraviolet light is carried out to crystal column surface；
Step S24：The 4th ultraviolet light is carried out after standing the 3rd Preset Time of the wafer to crystal column surface, to go
Electric charge except capture in the interlayer dielectric layer.
Preferably, first Preset Time, the second Preset Time and the 3rd Preset Time are identical.
Preferably, described first Preset Time, the second Preset Time and the 3rd Preset Time.
Preferably, wavelength selected by the ultraviolet light is 280nm～330nm.
Preferably, the ultraviolet light ambient temperature is controlled to 110～180 DEG C.
Preferably, the ultraviolet light intensity controls in 210～270mv/cm2.
Preferably, the ultraviolet lighting time control is 480 seconds.
From technique scheme as can be seen that the side of the reduction back-illuminated cmos image sensors white pixel of present invention offer
Method, which passes through ultraviolet light, and bound electric charge in interlayer dielectric layer in elimination cmos image sensor, so as to reduce CMOS
The leakage current of imageing sensor, it is achieved that the reduction of white pixel.The method can reach following beneficial effect：
1., after, being irradiated to chip by ultraviolet light, the electric charge that captures in silicon nitride medium layer effectively removes, from
And reduce the probability of dark current generation, make white pixel reduce 13% on the basis of existing；
2., this method can't affect chip full trap electric capacity (Full well while white pixel is reduced
Capacity), the important parameter such as dark image inhomogeneities (dark image non-uniformity)；
3., ultraviolet light is irradiated this method convenient and efficient to chip, with low cost, and whole flow process will not be produced
Any impact of life.
Description of the drawings
Fig. 1 is the schematic flow sheet for forming device control gate in prior art
Fig. 2 reduces by one preferred embodiment of method of back-illuminated type complementary metal semiconductor image sensor white pixel for the present invention
Schematic flow sheet
Fig. 3 be process improving before and after the horizontal contrast schematic diagram of white pixel
Specific embodiment
Embody feature of present invention to be described in the explanation of back segment in detail with the embodiment of advantage.It should be understood that the present invention
Can be with various changes in different examples, which neither departs from the scope of the present invention, and therein explanation and be shown in
Substantially regard purposes of discussion, and be not used to limit the present invention.
Below in conjunction with accompanying drawing, by specific embodiment to the reduction back-illuminated cmos image sensors white pixel of the present invention
Method is described in further detail.It should be noted that the problem that the present invention is solved is to remove capture electricity in silicon nitride medium layer
The method of lotus, so as to reduce dark current, reduces the generation of white pixel.
Below in conjunction with the accompanying drawings the specific embodiment of the present invention is described in detail.
Fig. 2, Fig. 2 are referred to for a kind of method for reducing back-illuminated cmos image sensors white pixel in the embodiment of the present invention
Schematic flow sheet, as illustrated, the forming step of the method can include：
Step S1：After wafer completes the technique of cmos image sensor pixel region, between pixel region surface deposits
Dielectric layer (equivalent to step S100 in Fig. 2).
It should be noted that generally, being formed with the silicon chip of complementary metal oxide semiconductor device during flow
Heavy interlayer dielectric layer is generally needed.In an embodiment of the present invention, the cmos image sensor is partly led for back-illuminated type complementary metal
Body imageing sensor, the structure can be as identical in Fig. 1, it is also possible to different, as long as partly leading complementary metal oxide is formed with
The silicon chip of body device is deposited during flow interlayer dielectric layer, and the present invention can all be suitable for.
For example, as the structure in Fig. 1, it is formed on whole CMOS device with SiO2Interlayer
Dielectric layer 32 between dielectric layer 31 and SiN layer, wherein, between SiN layer, dielectric layer 32 easily captures electric charge.
Step S2：After the completion of wafer with protection layer deposition, and before wafer level packaging, crystal column surface is carried out purple at least one times
Outer light irradiation, to reduce the white pixel of back-illuminated cmos image sensors.
It will be apparent to those skilled in the art that ultraviolet light is irradiated to SiO due to having higher energy2Interlayer dielectric layer and SiN
The electron hole pair being combined quickly can be produced after interlayer dielectric layer, because SiN has relatively low band gap, the electricity that great majority are not combined
Sub- hole is being gathered in dielectric layer between SiN layer.Wherein, as electronics has higher mobility, so can shift quickly.
In the preferred embodiment, the selection of process conditions can be as follows：Wavelength selected by ultraviolet light be 280nm～
330nm；Ultraviolet light ambient temperature is controlled to 110～180 DEG C；Ultraviolet light intensity controls in 210～270mv/cm2；Ultraviolet light
It it is 480 seconds according to time control.
For obtaining more preferable effect, can between at regular intervals using ultraviolet light crystal column surface irradiate four times, specifically
Ground, the first Preset Time, the second Preset Time and the 3rd Preset Time are typically identical, for example, in following preferably concrete realities
Apply in example, the first Preset Time, the second Preset Time and the 3rd Preset Time can be set as 10 minutes.
I.e. step S2 can specifically include：
Step S21：First time ultraviolet light (equivalent to step S200 in Fig. 2) is carried out to crystal column surface；
Step S22：After standing the first Preset Time of wafer (for example, 10 minutes), crystal column surface is carried out ultraviolet for the second time
Light irradiation (equivalent to step S210 in Fig. 2)；
Step S23：After standing the second Preset Time of wafer (for example, 10 minutes), third time is carried out to crystal column surface ultraviolet
Light irradiation (equivalent to step S220 in Fig. 2)；
Step S24：Standing the 3rd Preset Time of wafer after (for example, 10 minutes), crystal column surface is carried out the 4th time ultraviolet
Light irradiation, to remove the electric charge (equivalent to step S230 in Fig. 2) that captures in interlayer dielectric layer.
Fig. 3, Fig. 3 are referred to for the horizontal contrast schematic diagram of white pixel before and after process improving；As illustrated, #16 and #17 are
Using the sample after ultraviolet lighting, compared with reference standard sample #1 and #2, the process effectively reduces white pixel and is about
13%.
Also, the present invention can't affect chip full trap electric capacity (Full well while white pixel is reduced
Capacity), the important parameter such as dark image inhomogeneities (dark image non-uniformity).
Above content is only embodiments of the invention, and embodiment is simultaneously not used to limit the scope of patent protection of the present invention, because
The equivalent structure change made by the description and accompanying drawing content of this every utilization present invention, should be included in the guarantor of the present invention in the same manner
In the range of shield.
Claims (8)
1. a kind of reduce back-illuminated cmos image sensors white pixel method, it is characterised in that comprise the steps：
Step S1：After wafer completes the technique of cmos image sensor pixel region, between the pixel region surface deposits
Dielectric layer；
Step S2：After the completion of wafer with protection layer deposition, and before the wafer level packaging, the crystal column surface is carried out to
A few ultraviolet light, to reduce back-illuminated cmos image sensors white pixel.
2. according to claim 1 reduce back-illuminated cmos image sensors white pixel method, it is characterised in that described
Ultraviolet light be four times, step S2 is specifically included：
Step S21：First time ultraviolet light is carried out to the crystal column surface；
Step S22：After standing the first Preset Time of the wafer, second ultraviolet light is carried out to crystal column surface；
Step S23：After standing the second Preset Time of the wafer, third time ultraviolet light is carried out to crystal column surface；
Step S24：The 4th ultraviolet light is carried out after standing the 3rd Preset Time of the wafer to crystal column surface, to remove
State the electric charge of capture in interlayer dielectric layer.
3. according to claim 2 reduce back-illuminated cmos image sensors white pixel method, it is characterised in that described
First Preset Time, the second Preset Time and the 3rd Preset Time are identical.
4. according to claim 3 back-illuminated cmos image sensors white pixel is reduced, it is characterised in that described first
Preset Time, the second Preset Time and the 3rd Preset Time are 10 minutes.
5. according to claim 1 reduce back-illuminated cmos image sensors white pixel method, it is characterised in that described
Wavelength selected by ultraviolet light is 280nm～330nm.
6. according to claim 1 reduce back-illuminated cmos image sensors white pixel method, it is characterised in that described
Ultraviolet light ambient temperature is controlled to 110～180 DEG C.
7. according to claim 1 reduce back-illuminated cmos image sensors white pixel method, it is characterised in that described
Ultraviolet light intensity controls in 210～270mv/cm2.
8. according to claim 1 reduce back-illuminated cmos image sensors white pixel method, it is characterised in that described
Ultraviolet lighting time control is 480s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610884399.3A CN106449682B (en) | 2016-10-10 | 2016-10-10 | A method of reducing back-illuminated cmos image sensors white pixel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610884399.3A CN106449682B (en) | 2016-10-10 | 2016-10-10 | A method of reducing back-illuminated cmos image sensors white pixel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106449682A true CN106449682A (en) | 2017-02-22 |
| CN106449682B CN106449682B (en) | 2019-04-05 |
Family
ID=58172364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610884399.3A Active CN106449682B (en) | 2016-10-10 | 2016-10-10 | A method of reducing back-illuminated cmos image sensors white pixel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106449682B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300773A (en) * | 2018-08-15 | 2019-02-01 | 上海华力集成电路制造有限公司 | The surface treatment method of wafer |
| CN114155238A (en) * | 2021-12-10 | 2022-03-08 | 上海集成电路装备材料产业创新中心有限公司 | Method, apparatus, device and medium for analyzing white pixel distribution of image sensor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101640210A (en) * | 2008-08-01 | 2010-02-03 | 索尼株式会社 | Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus |
| CN101652843A (en) * | 2007-03-26 | 2010-02-17 | 东京毅力科创株式会社 | Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma processing apparatus |
| CN102709301A (en) * | 2012-05-28 | 2012-10-03 | 格科微电子（上海）有限公司 | Image sensor and application method of image sensor |
| CN103247649A (en) * | 2013-05-07 | 2013-08-14 | 上海华力微电子有限公司 | Method for reducing electrical mutual disturbance of image sensor |
| US20140097510A1 (en) * | 2011-06-07 | 2014-04-10 | Shimadzu Corporation | Photodiode and method for producing the same, photodiode array, spectrophotometer and solid-state imaging device |
| CN103824868A (en) * | 2014-03-06 | 2014-05-28 | 上海华虹宏力半导体制造有限公司 | CMOS (complementary metal-oxide-semiconductor transistor) image sensor and manufacturing method thereof |
-
2016
- 2016-10-10 CN CN201610884399.3A patent/CN106449682B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101652843A (en) * | 2007-03-26 | 2010-02-17 | 东京毅力科创株式会社 | Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma processing apparatus |
| CN101640210A (en) * | 2008-08-01 | 2010-02-03 | 索尼株式会社 | Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus |
| US20140097510A1 (en) * | 2011-06-07 | 2014-04-10 | Shimadzu Corporation | Photodiode and method for producing the same, photodiode array, spectrophotometer and solid-state imaging device |
| CN102709301A (en) * | 2012-05-28 | 2012-10-03 | 格科微电子（上海）有限公司 | Image sensor and application method of image sensor |
| CN103247649A (en) * | 2013-05-07 | 2013-08-14 | 上海华力微电子有限公司 | Method for reducing electrical mutual disturbance of image sensor |
| CN103824868A (en) * | 2014-03-06 | 2014-05-28 | 上海华虹宏力半导体制造有限公司 | CMOS (complementary metal-oxide-semiconductor transistor) image sensor and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300773A (en) * | 2018-08-15 | 2019-02-01 | 上海华力集成电路制造有限公司 | The surface treatment method of wafer |
| CN109300773B (en) * | 2018-08-15 | 2021-06-15 | 上海华力集成电路制造有限公司 | Surface treatment method of wafer |
| CN114155238A (en) * | 2021-12-10 | 2022-03-08 | 上海集成电路装备材料产业创新中心有限公司 | Method, apparatus, device and medium for analyzing white pixel distribution of image sensor |
| CN114155238B (en) * | 2021-12-10 | 2024-03-29 | 上海集成电路装备材料产业创新中心有限公司 | Method, apparatus, device and medium for analyzing white pixel distribution of image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106449682B (en) | 2019-04-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10998364B2 (en) | Image sensor scheme for optical and electrical improvement | |
| US10163974B2 (en) | Method of forming absorption enhancement structure for image sensor | |
| US10510910B2 (en) | Image sensor with an absorption enhancement semiconductor layer | |
| US7714403B2 (en) | Image sensor using back-illuminated photodiode and method of manufacturing the same | |
| US8390089B2 (en) | Image sensor with deep trench isolation structure | |
| US8614495B2 (en) | Back side defect reduction for back side illuminated image sensor | |
| KR20180098687A (en) | Photosensitive imaging devices and associated methods | |
| JP2015159338A (en) | Semiconductor apparatus for bsi image sensor, and method of forming the same | |
| KR102010703B1 (en) | High dielectric constant dielectric layer forming method, image sensor device, and manufacturing method thereof | |
| US20230387163A1 (en) | Method for forming light pipe structure with high quantum efficiency | |
| US7545020B2 (en) | CMOS image sensor and method for manufacturing the same | |
| CN106449682B (en) | A method of reducing back-illuminated cmos image sensors white pixel | |
| CN105810696A (en) | Backside deep trench-isolated backside-illuminated image sensor manufacturing method | |
| US9252296B2 (en) | Semiconductor device with compressive layers | |
| KR100406596B1 (en) | Method for forming image sensor having NPNP photodiode | |
| US20220328538A1 (en) | Epitaxial semiconductor liner for enhancing uniformity of a charged layer in a deep trench and methods of forming the same | |
| CN100576511C (en) | The manufacture method of cmos image sensor | |
| CN104078472A (en) | CMOS (Complementary Metal Oxide Semiconductor) image sensor and manufacturing method thereof | |
| CN114005843A (en) | Method for improving white pixel of back-illuminated CMOS image sensor | |
| US20240162264A1 (en) | Device over photodetector pixel sensor | |
| CN106653781A (en) | Manufacturing method of semiconductor device | |
| TW200425497A (en) | Semiconductor light receiving device and manufacturing method for the same | |
| CN114156298A (en) | Method for forming image sensor | |
| US20150364520A1 (en) | Imager having a reduced dark current through an increased bulk doping level | |
| CN107240592A (en) | A kind of imaging sensor for improving light utilization efficiency and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |