CN106449371B - Plasma cleaning method, packaging method, power module and air conditioner - Google Patents
Plasma cleaning method, packaging method, power module and air conditioner Download PDFInfo
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- CN106449371B CN106449371B CN201611062003.3A CN201611062003A CN106449371B CN 106449371 B CN106449371 B CN 106449371B CN 201611062003 A CN201611062003 A CN 201611062003A CN 106449371 B CN106449371 B CN 106449371B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4835—Cleaning, e.g. removing of solder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
Abstract
The present invention provides a kind of plasma cleaning method, packaging method, power module and air conditioners, wherein, plasma cleaning method includes: to carry out plasma clean to substrate and/or power module using the mixed gas for including oxygen and argon gas, wherein, the range of flow of oxygen is 0~500sccm, the range of flow of argon gas is 0~200sccm, the radio frequency power range of plasma cleaning process is 0~1000W, wherein, substrate and/or power device are arranged close in the indoor excitation end of the chamber of plasma clean or ground terminal.Technical solution through the invention, effectively remove the organic matters such as scaling powder and the viscose on substrate, and dust, so that the binding force between baseline and encapsulating material improves, reduce the surface stress of the contact surface of substrate and package casing, so that above-mentioned power module architectures are stablized, the heat dissipation performance wet-hot aging performance and reliability of power module are further increased.
Description
Technical field
The present invention relates to power module technical fields, in particular to a kind of plasma cleaning method, a kind of encapsulation
Method, a kind of power module and a kind of air conditioner.
Background technique
Power module, i.e. IPM (Intelligent Power Module) are a kind of by power electronics and integrated circuit skill
The power drive device (Deriver Integrated Circuit, i.e. Driver IC) that art combines.Due to highly integrated
The advantages such as degree, high reliability, power module win increasing market, are particularly suitable for the frequency converter of driving motor and various
Inverter is frequency control, metallurgical machinery, electric propulsion, servo-drive and the common power electronic devices of frequency-conversion domestic electric appliances.
Wherein, since the work condition environment of power module is generally more harsh, such as high temperature, humidity, high ion concentration are severe
Environment, and self-heating is larger, it is therefore desirable to good reliability design is to solve the life problems being used for a long time.
In the related technology, in the manufacturing process of power module, the substrate of use generally includes to cover copper ceramic substrate
(DBC), lead frame framework (CIS) and insulating metal substrate (IMS), manufacturing process is substantially similar, including bonding auxiliary material
Printing, power device and wafer attachment, reflow soldering, liquid medicine cleaning or not, the binding of plasma clean, metal contact wires
With epoxy resin encapsulation.
Metal substrate (CIS) becomes the mainstream substrate of power module with its good heat dissipation performance, specifically includes: bonding is auxiliary
Expect printing, power device, reflow soldering, liquid medicine cleaning, plasma clean, metal contact wires bind, lead frame weld and
Epoxy resin encapsulation, plasma clean are arranged before binding metal contact wires, and to solve, wiring off-line etc. is undesirable to be asked
Topic, however pin welding sequence is welded using scaling powder auxiliary in this process, and removes scaling powder without cleaning treatment, and
Epoxy resin encapsulation is carried out afterwards, and therefore, binding force is deteriorated between lead frame and epoxy resin, and packaging body is easily layered, and reduces
Moisture-proof thermal characteristics, reliability and the service life of power module.
Summary of the invention
The present invention is directed to solve at least one of the technical problems existing in the prior art or related technologies.
For this purpose, an object of the present invention is to provide a kind of plasma cleaning methods.
It is another object of the present invention to propose a kind of packaging method.
It is another object of the present invention to propose a kind of power module.
It is another object of the present invention to propose a kind of air conditioner.
To achieve the above object, according to the embodiment of the first aspect of the invention, a kind of plasma clean side is proposed
Method, comprising: plasma clean is carried out to substrate and/or power device using the mixed gas for including oxygen and argon gas, wherein
The range of flow of oxygen is 0~500sccm, and the range of flow of argon gas is 0~200sccm, the radio frequency of plasma cleaning process
Power bracket is 0~1000W, wherein substrate and/or power device are arranged close in the indoor excitation of the chamber of plasma clean
End or ground terminal.
The plasma cleaning method of embodiment according to the present invention, by using the mixed gas including oxygen and argon gas
The range of flow for carrying out plasma clean to substrate and/or power device, and oxygen being specifically arranged is 0~500sccm, argon
The range of flow of gas is 0~200sccm, and the radio frequency power range of plasma cleaning process is 0~1000W, on the one hand, oxygen
The organic matters such as scaling powder and viscose in the form of oxonium ion and on substrate are chemically reacted namely oxidation of organic compounds formation is waved
Hair property gas, meanwhile, argon gas bombards organic matter as inert gas, to improve its activity, accelerates the efficiency of Ion Cleaning.
It is worth it is emphasized that the chamber of plasma clean includes one group of excitation end being oppositely arranged and ground terminal, phase
When in a pair of positive and negative electrode base board being oppositely arranged, plasma is generated from excitation end, and to ground under the action of RF excited
End accelerates, and therefore, when substrate and/or power device are close to the setting of excitation end, the concentration of plasma is maximum, mainly
Oxygen plasma carries out chemical cleaning to substrate and/or power device, and is arranged in substrate and/or power device close to ground terminal
When, the movement velocity of argon plasma is close to maximum value namely kinetic energy close to maximum, therefore, argon plasma to substrate and/or
The Bombardment and cleaning effect of power device be most it will be evident that improve the activity of surface organic matter, be conducive to further with oxygen etc. from
Sub- fast reaction.
Wherein, argon plasma about removes 2~5 nanometers of organic matter, and reaction formula is as follows:
Ar+e-→Ar++2e-。
The reaction formula of oxygen plasma is as follows:
O2+e-→2O.+e-；O.+Organic (organic matter) → CO2+H2O。
With in the prior art to the cleaning technique of substrate contrastingly, instead of aqueous chemical cleaning method, to avoid right
The corrosion of power device and wiring on substrate, equally, instead of laser cleaning method, to reduce the generation of dust and right
The contamination of substrate.
Plasma cleaning method according to the abovementioned embodiments of the present invention can also have following technical characteristic:
Preferably, the range of flow of oxygen is 150~200sccm, and the range of flow of argon gas is 100~120sccm, wait from
The radio frequency power range of daughter cleaning process is 500~700W.
Preferably, the flow of oxygen is 80sccm, and the flow of argon gas is 100sccm, the radio frequency of plasma cleaning process
Power is 500W, and the time of plasma cleaning process is 800 seconds.
Preferably, the flow of oxygen is 160sccm, and the flow of argon gas is 80sccm, the radio frequency of plasma cleaning process
Power is 180W or 210W, and the time of plasma cleaning process is 300 seconds.
Preferably, the flow of oxygen is 80sccm, and the flow of argon gas is 160sccm, the radio frequency of plasma cleaning process
Power is 210W, and the time of plasma cleaning process is 180 seconds.
Preferably, the flow of oxygen is 80sccm, and the flow of argon gas is 80sccm, the radio frequency function of plasma cleaning process
Rate is 270W, and the time of plasma cleaning process is 300 seconds.
Preferably, in plasma cleaning process, the content ratio between oxygen and argon gas is 1:4.
Embodiment according to the second aspect of the invention proposes a kind of packaging method, comprising: using such as above-mentioned first party
The plasma cleaning method in any one of face cleans substrate to be packaged；Complete plasma clean it is default when
In, the substrate to be packaged for completing cleaning is transferred in encapsulating mould and is packaged.
Packaging method according to the abovementioned embodiments of the present invention can also have following technical characteristic:
Preferably, preset time is less than or equal to 12 hours.
The packaging method of embodiment according to the present invention is less than or equal to 12 hours by setting preset time, is reduced
A possibility that surface of substrate to be packaged regenerates new organic matter or is secondary polluted, helps to improve the reliable of encapsulation
Property.
Preferably, the substrate to be packaged for completing cleaning is transferred in encapsulating mould and is packaged, further includes: use ring
Oxygen plastic packaging material is packaged the substrate to be packaged in encapsulating mould.
Preferably, the substrate to be packaged for completing cleaning is transferred in encapsulating mould and is packaged, further includes: pass through envelope
The filling mouth of die-filling tool injects casting glue, to be packaged to the substrate to be packaged in encapsulating mould.
Preferably, substrate to be packaged is metal substrate.
Preferably, before being cleaned to substrate to be packaged, further includes: help weldering in the specified region coating of metal substrate
Agent；It welds to form power device and metal connecting line in the specified region of coating fluxing agent using reflow soldering process.
The packaging method of embodiment according to the present invention, in order to which power device and metal connecting line are soldered to metal substrate,
It needs to coat scaling powder in advance, although the welding sequence in this process is welded using scaling powder auxiliary, but without
Cleaning treatment removes scaling powder, such as directly carries out epoxy resin encapsulation, and the binding force that will lead between substrate and epoxy resin becomes
Difference, packaging body are easily layered, so that the humidity resistance of power module and reliability be made to reduce.
Therefore, before being packaged for the metal substrate welded using scaling powder, using above-mentioned plasma clean
Can effectively remove the organic matters such as scaling powder, promote the conjugation between substrate and encapsulating material, so improve packaging technology and
The reliability of power device.
Embodiment according to the third aspect of the invention we proposes a kind of power module, using such as above-mentioned first aspect
Plasma cleaning method described in any one technical solution is cleaned, or using any one technology such as above-mentioned second aspect
Packaging method described in scheme is packaged.
The power module of embodiment according to the present invention, by using the mixed gas including oxygen and argon gas to substrate
And/or power device carries out plasma clean, and the range of flow that oxygen is specifically arranged is 0~500sccm, the stream of argon gas
Amount range is 0~200sccm, and the radio frequency power range of plasma cleaning process is 0~1000W, on the one hand, oxygen with oxygen from
The organic matters such as scaling powder and viscose in the form and substrate of son are chemically reacted namely oxidation of organic compounds forms volatility gas
Body, meanwhile, argon gas bombards organic matter as inert gas, to improve its activity, accelerates the efficiency of Ion Cleaning.
Embodiment according to the fourth aspect of the invention proposes a kind of air conditioner, the skill including such as above-mentioned third aspect
Power module described in art scheme.
Additional aspect and advantage of the invention will be set forth in part in the description, and will partially become from the following description
Obviously, or practice through the invention is recognized.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 shows the schematic flow diagram of the plasma cleaning method of embodiment according to the present invention；
Fig. 2 shows the schematic flow diagrams of the packaging method of embodiment according to the present invention；
Fig. 3 shows the schematic diagram of the embodiment one of power module according to the present invention；
Fig. 4 shows the schematic diagram of the embodiment two of power module according to the present invention；
Fig. 5 shows the schematic diagram of the air conditioner of embodiment according to the present invention；
Fig. 6 shows power module according to the present invention in chamber the first intracorporal modes of emplacement of plasma clean
Schematic diagram；
Fig. 7 shows power module according to the present invention in chamber intracorporal second of modes of emplacement of plasma clean
Schematic diagram；
Fig. 8 shows power module according to the present invention in chamber the third intracorporal modes of emplacement of plasma clean
Schematic diagram.
Specific embodiment
To better understand the objects, features and advantages of the present invention, with reference to the accompanying drawing and specific real
Applying mode, the present invention is further described in detail.It should be noted that in the absence of conflict, the implementation of the application
Feature in example and embodiment can be combined with each other.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, still, the present invention may be used also
To be implemented using other than the one described here other modes, therefore, protection scope of the present invention is not by described below
Specific embodiment limitation.
Fig. 1 shows the schematic flow diagram of the plasma cleaning method of embodiment according to the present invention.
As shown in Figure 1, the plasma cleaning method of embodiment according to the present invention, comprising: step 102, using including
The mixed gas of oxygen and argon gas carries out plasma clean to substrate and/or power device, wherein the range of flow of oxygen is
0~500sccm, the range of flow of argon gas are 0~200sccm, the radio frequency power range of plasma cleaning process is 0~
1000W。
The plasma cleaning method of embodiment according to the present invention, by using the mixed gas including oxygen and argon gas
The range of flow for carrying out plasma clean to substrate and/or power device, and oxygen being specifically arranged is 0~500sccm, argon
The range of flow of gas is 0~200sccm, and the radio frequency power range of plasma cleaning process is 0~1000W, on the one hand, oxygen
The organic matters such as scaling powder and viscose in the form of oxonium ion and on substrate are chemically reacted namely oxidation of organic compounds formation is waved
Hair property gas, meanwhile, argon gas bombards organic matter as inert gas, to improve its activity, accelerates the efficiency of Ion Cleaning.
It is worth it is emphasized that the chamber of plasma clean includes one group of excitation end being oppositely arranged and ground terminal, phase
When in a pair of positive and negative electrode base board being oppositely arranged, plasma is generated from excitation end, and to ground under the action of RF excited
End accelerates, and therefore, when substrate and/or power device are close to the setting of excitation end, the concentration of plasma is maximum, mainly
Oxygen plasma carries out chemical cleaning to substrate and/or power device, and is arranged in substrate and/or power device close to ground terminal
When, the movement velocity of argon plasma is close to maximum value namely kinetic energy close to maximum, therefore, argon plasma to substrate and/or
The Bombardment and cleaning effect of power device be most it will be evident that improve the activity of surface organic matter, be conducive to further with oxygen etc. from
Sub- fast reaction.
Wherein, argon plasma about removes 2~5 nanometers of organic matter, and reaction formula is as follows:
Ar+e-→Ar++2e-。
The reaction formula of oxygen plasma is as follows:
O2+e-→2O.+e-；O.+Organic (organic matter) → CO2+H2O。
With in the prior art to the cleaning technique of substrate contrastingly, instead of aqueous chemical cleaning method, to avoid right
The corrosion of power device and wiring on substrate, equally, instead of laser cleaning method, to reduce the generation of dust and right
The contamination of substrate.
Plasma cleaning method according to the abovementioned embodiments of the present invention can also have following implementation:
Embodiment one:
Preferably, the range of flow of oxygen is 150~200sccm, and the range of flow of argon gas is 100~120sccm, wait from
The radio frequency power range of daughter cleaning process is 500~700W.
Embodiment two:
Preferably, the flow of oxygen is 80sccm, and the flow of argon gas is 100sccm, the radio frequency of plasma cleaning process
Power is 500W, and the time of plasma cleaning process is 800 seconds.
Embodiment three:
Preferably, the flow of oxygen is 160sccm, and the flow of argon gas is 80sccm, the radio frequency of plasma cleaning process
Power is 180W or 210W, and the time of plasma cleaning process is 300 seconds.
Example IV:
Preferably, the flow of oxygen is 80sccm, and the flow of argon gas is 160sccm, the radio frequency of plasma cleaning process
Power is 210W, and the time of plasma cleaning process is 180 seconds.
Embodiment five:
Preferably, the flow of oxygen is 80sccm, and the flow of argon gas is 80sccm, the radio frequency function of plasma cleaning process
Rate is 270W, and the time of plasma cleaning process is 300 seconds.
Embodiment six:
Preferably, in plasma cleaning process, the content ratio between oxygen and argon gas is 1:4.
Fig. 2 shows the schematic flow diagrams of the packaging method of embodiment according to the present invention.
As shown in Fig. 2, the packaging method of embodiment according to the present invention, comprising: step 202, using such as above-mentioned first party
The plasma cleaning method in any one of face cleans substrate to be packaged；Step 204, plasma clean is completed
Preset time in, the substrate to be packaged for completing cleaning is transferred in encapsulating mould and is packaged.
Packaging method according to the abovementioned embodiments of the present invention can also have following technical characteristic:
Preferably, preset time is less than or equal to 12 hours.
The packaging method of embodiment according to the present invention is less than or equal to 12 hours by setting preset time, is reduced
A possibility that surface of substrate to be packaged regenerates new organic matter or is secondary polluted, helps to improve the reliable of encapsulation
Property.
Preferably, the substrate to be packaged for completing cleaning is transferred in encapsulating mould and is packaged, further includes: use ring
Oxygen plastic packaging material is packaged the substrate to be packaged in encapsulating mould.
Preferably, the substrate to be packaged for completing cleaning is transferred in encapsulating mould and is packaged, further includes: pass through envelope
The filling mouth of die-filling tool injects casting glue, to be packaged to the substrate to be packaged in encapsulating mould.
Preferably, substrate to be packaged is metal substrate.
Preferably, before being cleaned to substrate to be packaged, further includes: help weldering in the specified region coating of metal substrate
Agent；It welds to form power device and metal connecting line in the specified region of coating fluxing agent using reflow soldering process.
The packaging method of embodiment according to the present invention, in order to which power device and metal connecting line are soldered to metal substrate,
It needs to coat scaling powder in advance, although the welding sequence in this process is welded using scaling powder auxiliary, but without
Cleaning treatment removes scaling powder, such as directly carries out epoxy resin encapsulation, and the binding force that will lead between substrate and epoxy resin becomes
Difference, packaging body are easily layered, so that the humidity resistance of power module and reliability be made to reduce.
Therefore, before being packaged for the metal substrate welded using scaling powder, using above-mentioned plasma clean
Can effectively remove the organic matters such as scaling powder, promote the conjugation between substrate and encapsulating material, so improve packaging technology and
The reliability of power device.
Fig. 3 shows the schematic diagram of the embodiment one of power module according to the present invention.
Fig. 4 shows the schematic diagram of the embodiment two of power module according to the present invention.
Power module according to the present invention is specifically described below with reference to Fig. 3 and Fig. 4.
As shown in Figure 3 and Figure 4, power module according to the present invention uses plasma clean side described in any of the above embodiments
Method is cleaned, or is packaged using packaging method described above.
Specifically, the preparation method of power module according to the present invention includes: that bonding auxiliary material is printed in metal substrate 102
Surface；Power device 104 is mounted on the metal substrate 102 with the bonding auxiliary material；The power will be had
The metal substrate 102 of device 104 carries out reflow soldering using reflow ovens；The power device will be had by reflow soldering
The metal substrate 102 of part 104 carries out chemical medicinal liquid cleaning；By the gold with the power device 104 after cleaning
Belong to substrate 102 and carries out the binding of metal contact wires 108；The power device 104 will be had after the binding of above-mentioned metal contact wires 108
The metal substrate 102 carry out lead frame welding；The complete lead frame welding of above-mentioned carry out is had into the power device
104 metal substrate 102 carries out argon gas/oxygen mixture plasma clean processing；At above-mentioned plasma clean
The metal substrate 102 with the power device 104 after reason is using 110 plastic packaging of epoxy-plastic packaging material at the power mould
Block.
Above-mentioned power module is by argon gas/oxygen gas plasma processing, so that lead frame welds remaining scaling powder 106
It is completely removed, makes to eliminate layering there are strong binding force between lead frame and the epoxy-plastic packaging material 110 of power module
Hidden danger significantly improves the wet-hot aging performance of power module, promotes the reliability of power module.
The manufacturing method of above-mentioned power module is used by the setting of plasma clean process after lead frame welding, energy
The organic pollutants such as the remaining scaling powder 106 of lead frame are effectively ensured to completely remove, existing power module is effectively overcome to manufacture
Scaling powder 106 remains in the process, solves that binding force between lead frame and epoxy-plastic packaging material 110 is poor, the easy technology being layered
Problem.
As shown in figure 3, epoxy-plastic packaging material 110 is carrying out total incapsulation dress namely metal substrate 102 just to metal substrate 102
Face 102A and back side 102B is coated on the inside of epoxy-plastic packaging material 110 completely.
As shown in figure 4, epoxy-plastic packaging material 110 is carrying out total incapsulation dress namely metal substrate 102 just to metal substrate 102
Face 102A is coated on the inside of epoxy-plastic packaging material 110, and back side 102B is exposed to the outside of epoxy-plastic packaging material 110.
Fig. 5 shows the schematic diagram of the air conditioner of embodiment according to the present invention.
As shown in figure 5, the air conditioner 500 of embodiment according to the present invention, the function including such as any of the above-described technical solution
Rate module 502.
Fig. 6 shows power module according to the present invention in chamber the first intracorporal modes of emplacement of plasma clean
Schematic diagram.
Fig. 7 shows power module according to the present invention in chamber intracorporal second of modes of emplacement of plasma clean
Schematic diagram.
Fig. 8 shows power module according to the present invention in chamber the third intracorporal modes of emplacement of plasma clean
Schematic diagram.
Below with reference to Fig. 6 to Fig. 8 to power module according to the present invention (before encapsulation) in the cavity of plasma clean
Modes of emplacement be illustrated.
Embodiment one:
As shown in fig. 6, power device, metal bonding line and metal wiring layer have been formed on substrate to be packaged, by argon
Oxygen flow in gas/oxygen gas plasma is set as 160sccm, and argon flow is set as 80sccm, power setting 210W,
Time is set as 300 seconds, and intelligent object is placed in ground terminal and excitation end middle position carries out plasm reaction cavity cleaning, above-mentioned
In carrying out plastic packaging with epoxy-plastic packaging material in 12 hours after the cleaning of bare chip semi-finished product.
Embodiment two:
As shown in fig. 7, power device, metal bonding line and metal wiring layer have been formed on substrate to be packaged, by argon
Oxygen flow in gas/oxygen gas plasma is set as 160sccm, and argon flow is set as 80sccm, power setting 210W,
Time is set as 300 seconds, and intelligent object is placed in ground terminal and carries out plasm reaction cavity cleaning, above-mentioned bare chip semi-finished product cleaning
Afterwards in carrying out plastic packaging with epoxy-plastic packaging material in 12 hours.
Embodiment three:
As shown in figure 8, power device, metal bonding line and metal wiring layer have been formed on substrate to be packaged, by argon
Oxygen flow in gas/oxygen gas plasma is set as 160sccm, and argon flow is set as 80sccm, power setting 210W,
Time is set as 300 seconds, and intelligent object is placed in excitation end and carries out plasm reaction cavity cleaning, and above-mentioned bare chip semi-finished product are clear
In carrying out plastic packaging with epoxy-plastic packaging material in 12 hours after washing.
The technical scheme of the present invention has been explained in detail above with reference to the attached drawings, it is contemplated that how what is proposed in the related technology improves
The technical issues of package reliability, carries out substrate and/or power device by using the mixed gas for including oxygen and argon gas
Plasma clean, and the range of flow that oxygen is specifically arranged is 0~500sccm, the range of flow of argon gas is 0~
200sccm, the radio frequency power range of plasma cleaning process are 0~1000W, on the one hand, oxygen in the form of oxonium ion with
The organic matters such as scaling powder and viscose on substrate are chemically reacted namely oxidation of organic compounds forms escaping gas, meanwhile, argon
Gas bombards organic matter as inert gas, to improve its activity, accelerates the efficiency of Ion Cleaning.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of plasma cleaning method characterized by comprising
Plasma clean is carried out to substrate and/or power device using the mixed gas for including oxygen and argon gas,
Wherein, the substrate and/or the power device are arranged close in the indoor excitation end of the chamber of the plasma clean
Or ground terminal；
The flow of the oxygen is 80sccm, and the flow of the argon gas is 100sccm, the radio frequency of the plasma cleaning process
Power is 500W, and the time of the plasma cleaning process is 800 seconds；Or
The flow of the oxygen is 160sccm, and the flow of the argon gas is 80sccm, the radio frequency of the plasma cleaning process
Power is 180W or 210W, and the time of the plasma cleaning process is 300 seconds；Or
The flow of the oxygen is 80sccm, and the flow of the argon gas is 160sccm, the radio frequency of the plasma cleaning process
Power is 210W, and the time of the plasma cleaning process is 180 seconds；Or
The flow of the oxygen is 80sccm, and the flow of the argon gas is 80sccm, the radio frequency of the plasma cleaning process
Power is 270W, and the time of the plasma cleaning process is 300 seconds.
2. a kind of packaging method characterized by comprising
Using plasma cleaning method as described in claim 1, substrate to be packaged is cleaned；
In the preset time for completing the plasma clean, the substrate to be packaged for completing cleaning is transferred to encapsulation
It is packaged in mold.
3. packaging method according to claim 2, which is characterized in that
The preset time is less than or equal to 12 hours.
4. packaging method according to claim 2, which is characterized in that shift the substrate to be packaged for completing cleaning
It is packaged into encapsulating mould, further includes:
The substrate to be packaged in the encapsulating mould is packaged using epoxy-plastic packaging material.
5. packaging method according to claim 2, which is characterized in that shift the substrate to be packaged for completing cleaning
It is packaged into encapsulating mould, further includes:
Casting glue is injected by the filling mouth of the encapsulating mould, to carry out to the substrate to be packaged in the encapsulating mould
Encapsulation.
6. the packaging method according to any one of claim 2 to 5, which is characterized in that
The substrate to be packaged is metal substrate.
7. packaging method according to claim 6, which is characterized in that before being cleaned to the substrate to be packaged,
Further include:
In the specified region coating scaling powder of the metal substrate；
It welds to form power device and metal connecting line in the specified region for being coated with the scaling powder using reflow soldering process.
8. a kind of power module, which is characterized in that it is cleaned using plasma cleaning method as described in claim 1,
Or it is packaged using the packaging method as described in any one of claim 2 to 7.
9. a kind of air conditioner, which is characterized in that including power module as claimed in claim 8.
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| CN201611062003.3A CN106449371B (en) | 2016-11-24 | 2016-11-24 | Plasma cleaning method, packaging method, power module and air conditioner |
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| CN201611062003.3A CN106449371B (en) | 2016-11-24 | 2016-11-24 | Plasma cleaning method, packaging method, power module and air conditioner |
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| CN108538730B (en) * | 2017-03-06 | 2020-03-13 | 中芯国际集成电路制造(上海)有限公司 | Packaging method |
| CN107611008A (en) * | 2017-08-30 | 2018-01-19 | 苏州惠华电子科技有限公司 | A kind of method for being used to remove the scaling powder of substrate and chip surface thereon |
| CN111834236A (en) * | 2019-04-22 | 2020-10-27 | 无锡华润安盛科技有限公司 | Semiconductor packaging method |
| CN114535219B (en) * | 2022-01-19 | 2024-04-05 | 昆山丘钛微电子科技股份有限公司 | Corrosion prevention method and system for welding part of camera module |
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| CN103065931A (en) * | 2011-10-24 | 2013-04-24 | 中国科学院上海微***与信息技术研究所 | Method for preparing semiconductor relaxation, tensile strain materials and for transferring layers thereof |
| CN105047573A (en) * | 2015-06-30 | 2015-11-11 | 南通富士通微电子股份有限公司 | Soldering tin anti-corrosion treatment method in semiconductor packaging and wire bonding process |
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| CN103065931A (en) * | 2011-10-24 | 2013-04-24 | 中国科学院上海微***与信息技术研究所 | Method for preparing semiconductor relaxation, tensile strain materials and for transferring layers thereof |
| CN105047573A (en) * | 2015-06-30 | 2015-11-11 | 南通富士通微电子股份有限公司 | Soldering tin anti-corrosion treatment method in semiconductor packaging and wire bonding process |
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