CN106448554A - OLED (organic light-emitting diode) driving circuit and OLED display panel - Google Patents
OLED (organic light-emitting diode) driving circuit and OLED display panel Download PDFInfo
- Publication number
- CN106448554A CN106448554A CN201611079525.4A CN201611079525A CN106448554A CN 106448554 A CN106448554 A CN 106448554A CN 201611079525 A CN201611079525 A CN 201611079525A CN 106448554 A CN106448554 A CN 106448554A
- Authority
- CN
- China
- Prior art keywords
- film transistor
- thin film
- tft
- driving
- oled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The invention provides an OLED (organic light-emitting diode) driving circuit and an OLED display panel. The OLED driving circuit comprises a switching thin film transistor, a driving thin film transistor, a storage capacitor and a compensation circuit, wherein each of the switching thin film transistor and the driving thin film transistor comprises a grid electrode, a first end and a second end; the first end of the switching thin film transistor receives a data signal; the grid electrode of the switching thin film transistor receives an n-th stage scanning signal (SCAN[n]); the second end of the switching thin film transistor is electrically connected with the second end of the driving thin film transistor; the grid electrode of the driving thin film transistor is electrically connected to a voltage source through the storage capacitor; the second end of the driving thin film transistor is electrically to a positive electrode of the OLED through part of components in the compensation circuit; a negative electrode of the OLED loads low electrical level; the compensation circuit is used for compensating the change, caused by drifting of threshold voltage of the driving thin film transistor, of the driving current of the OLED; and the compensation circuit is also used for stabilizing the electric potential of the grid electrode of the driving thin film transistor.
Description
Technical field
The present invention relates to display field, more particularly, to a kind of OLED drive and OLED display panel.
Background technology
Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) display floater is because having because tool
The standby frivolous, characteristic such as energy-conservation, wide viewing angle, colour gamut are wide, contrast is high and enjoy the favor of people.The basic driver circuit of OLED is such as
Shown in Fig. 1, Fig. 1 is the schematic diagram of OLED drive in prior art.Described drive circuit is used for driving OLED, described driving
Circuit include a switching thin-film transistor (Switch TFT) T1, driving thin film transistor (TFT) (Driver TFT) T2 and
One storage capacitance Cst, this structure is also referred to as 2T1C structure.The grid of described switching thin-film transistor T1 receives scanning letter
Breath SCAN, the drain electrode receiving data signal Data of described switching thin-film transistor T1, the source electrode of described switching thin-film transistor T1
It is electrically connected to the grid of described driving thin film transistor (TFT) T2.The source electrode of described switching thin-film transistor T1 and described switch film are brilliant
Body pipe T1 drain electrode on or off under the control of described scanning signal SCAN.Source electrode as described switching thin-film transistor T1
When turning under the control of described scanning signal SCAN with described switching thin-film transistor T1 drain electrode, described data signal Data quilt
Transmit to the grid of described driving thin film transistor (TFT) T2.The source electrode of described driving thin film transistor (TFT) T2 is electrically connected to a high potential
The drain electrode of VDD, described driving thin film transistor (TFT) T2 is electrically connected to the positive pole of described OLED.The positive pole of described OLED is electrically connected to one
Electronegative potential VSS.The grid being electrically connected to both ends of to described driving thin film transistor (TFT) T2 of described storage capacitance Cst and described drive
The drain electrode of dynamic thin film transistor (TFT) T2.Then the driving current of the described OLED of driving that described drive circuit produces is：IOLED=k (Vgs-
Vth)2.Wherein, IOLEDFor driving the driving current of described OLED, it is also the electric current flowing through described OLED；K is described driving thin film
The current amplification factor of transistor T2, is determined by the characteristic of described driving thin film transistor (TFT) T2 itself；VgsFor described driving thin film
Voltage between the grid of transistor T2 and source electrode；VthThreshold voltage for described driving thin film transistor (TFT) T2.As can be seen here, flow
Electric current through described OLED and the threshold voltage V of described driving thin film transistor (TFT) T2thRelevant.Due to described driving thin film transistor (TFT)
The threshold voltage V of T2thEasily drift about, thus leading to drive driving current I of described OLEDOLEDChange, drive described OLED's
Driving current IOLEDVariation can lead to the luminosity of described OLED to change, and then affects the picture of described OLED display panel
Matter quality.
Content of the invention
The present invention provides a kind of OLED drive, and described OLED drive is used for producing driving current to drive
OLED, described OLED drive includes switching thin-film transistor, drives thin film transistor (TFT), storage capacitance and compensation circuit,
Described switching thin-film transistor and described driving thin film transistor (TFT) all include grid, first end and the second end, described switch film
The first end receiving data signal of transistor, the grid of described switching thin-film transistor receives n-th grade of scanning signal (SCAN
[n]), described second end driving thin film transistor (TFT) of the second end electrical connection of described switching thin-film transistor, described driving thin film
The grid of transistor is electrically connected to a voltage source by described storage capacitance, and institute is passed through at the second end of described driving thin film transistor (TFT)
State the positive pole that the subelement in compensation circuit is electrically connected to described OLED, the negative pole of described OLED loads low level, described benefit
Repay circuit for compensate the driving of described OLED that brought due to the described drift of threshold voltage driving thin film transistor (TFT) electric
The change of stream, and described compensation circuit is additionally operable to stablize the current potential of the described grid driving thin film transistor (TFT)；Wherein, described first
Hold as source electrode, described second end is drain electrode；Or described first end is drain electrode, described second end is source electrode.
Wherein, described compensation circuit includes：First film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT) and
4th thin film transistor (TFT), described first film transistor, described second thin film transistor (TFT), described 3rd thin film transistor (TFT) and described
4th thin film transistor (TFT) all includes grid, first end and the second end；
The grid of described first film transistor receives (n-1) level scanning signal (SCAN [n-1]), described the first film
The described grid driving thin film transistor (TFT) of first end electrical connection of transistor, the second end reception of described first film transistor is low
Level (Vint), wherein, described n-th grade of scanning signal (SCAN [n]) is compared to described (n-1) level scanning signal (SCAN [n-
1]) postpone T/M, wherein, M is positive integer, and T is the cycle of scanning signal；
The grid of described second thin film transistor (TFT) receives and enables signal (Em), the first end electricity of described second thin film transistor (TFT)
Connect the positive pole of described OLED, the second end electrical connection of described second thin film transistor (TFT) is described to drive the second of thin film transistor (TFT)
End；
The grid of described 3rd thin film transistor (TFT) receives n-th grade of scanning signal (SCAN [n]), described 3rd thin film transistor (TFT)
The described first end driving thin film transistor (TFT) of first end electrical connection, the second end electrical connection of described 3rd thin film transistor (TFT) is described
Drive the grid of thin film transistor (TFT)；
Grid reception described enable signal (Em) of described 4th thin film transistor (TFT), the first of described 4th thin film transistor (TFT)
The described first end driving thin film transistor (TFT) of end electrical connection, the second end of described 4th thin film transistor (TFT) electrically connects described voltage
Source；
In glow phase：Described drive thin film transistor (TFT) grid current potential be described data signal voltage with described
Drive the absolute value sum of the threshold voltage of thin film transistor (TFT), described enable signal (Em) is the first level, described (n-1) level
Scanning signal (SCAN [n-1]) and described n-th grade of scanning signal (SCAN [n]) are second electrical level, described second film crystal
Pipe and described 4th thin film transistor (TFT) conducting, described first film transistor, described 3rd thin film transistor (TFT) and described switch are thin
Film transistor is turned off, the path conducting of described voltage source to described OLED negative pole, the described grid electricity driving thin film transistor (TFT)
The size of the driving current of the voltage-controlled system described OLED of described driving.
Wherein, in driving thin-film transistor gate voltage reset phase：Described enable signal (Em) is second electrical level, institute
Stating (n-1) level scanning signal (SCAN [n-1]) is the first level, and described n-th grade of scanning signal (SCAN [n]) is the second electricity
Flat, described first film transistor conducting, described second thin film transistor (TFT), described 3rd thin film transistor (TFT), described 4th thin film
Transistor and described switching thin-film transistor are turned off；
In data write and threshold voltage compensation stage：Described enable signal (Em) is second electrical level, described (n-1) level
Scanning signal (SCAN [n-1]) is second electrical level, and described n-th grade of scanning signal (SCAN [n]) is the first level, and the described 3rd is thin
Film transistor and the conducting of described switching thin-film transistor, described first film transistor, described second thin film transistor (TFT) and described
4th thin film transistor (TFT) is turned off, and now, the current potential of the described grid driving thin film transistor (TFT) is the voltage of described data signal
With the absolute value sum of the described threshold voltage driving thin film transistor (TFT), wherein, described driving thin-film transistor gate voltage weight
Put the stage, the write of described data and threshold voltage compensation stage, and described glow phase is three continuous stages successively.
Wherein, described compensation circuit also includes the 5th thin film transistor (TFT), described 5th thin film transistor (TFT) include grid, first
End and the second end, the grid of described 5th thin film transistor (TFT) receives described (n-1) level scanning signal (SCAN [n-1]), described
The first end of the 5th thin film transistor (TFT) receives described low level (Vint), and the second end of described 5th thin film transistor (TFT) is electrically connected to
The positive pole of described OLED.
Wherein, described first film transistor, described second thin film transistor (TFT), described 3rd thin film transistor (TFT), described
Four thin film transistor (TFT)s, described 5th thin film transistor (TFT), described switching thin-film transistor and described driving thin film transistor (TFT) are
PTFT, described first level is low level, and described second electrical level is high level；
Or, described first film transistor, described second thin film transistor (TFT), described 3rd thin film transistor (TFT), described
Four thin film transistor (TFT)s, described 5th thin film transistor (TFT), described switching thin-film transistor and described driving thin film transistor (TFT) are
NTFT, described first level is high level, and described second electrical level is low level.
Present invention also offers a kind of OLED display panel, described OLED display panel include OLED drive and
OLED, described OLED drive is used for producing driving current to drive OLED, and described OLED drive includes switch film
Transistor, driving thin film transistor (TFT), storage capacitance and compensation circuit, described switching thin-film transistor and described driving thin film are brilliant
Body pipe all includes grid, first end and the second end, the first end receiving data signal of described switching thin-film transistor, described switch
The grid of thin film transistor (TFT) receives n-th grade of scanning signal (SCAN [n]), the second end electrical connection institute of described switching thin-film transistor
State the second end driving thin film transistor (TFT), the grid of described driving thin film transistor (TFT) is electrically connected to an electricity by described storage capacitance
Potential source, the second end of described driving thin film transistor (TFT) is electrically connected to described OLED's by the subelement in described compensation circuit
Positive pole, the negative pole of described OLED loads low level, and described compensation circuit is used for compensating due to the described threshold driving thin film transistor (TFT)
The drift of threshold voltage and the change of the driving current of described OLED that brings, and described compensation circuit is additionally operable to stablize described driving
The current potential of the grid of thin film transistor (TFT)；Wherein, described first end is source electrode, and described second end is drain electrode；Or described first end
For drain electrode, described second end is source electrode.
Wherein, described compensation circuit includes：First film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT) and
4th thin film transistor (TFT), described first film transistor, described second thin film transistor (TFT), described 3rd thin film transistor (TFT) and described
4th thin film transistor (TFT) all includes grid, first end and the second end；
The grid of described first film transistor receives (n-1) level scanning signal (SCAN [n-1]), described the first film
The described grid driving thin film transistor (TFT) of first end electrical connection of transistor, the second end reception of described first film transistor is low
Level (Vint), wherein, described n-th grade of scanning signal (SCAN [n]) is compared to described (n-1) level scanning signal (SCAN [n-
1]) postpone T/M, wherein, M is positive integer, and T is the cycle of scanning signal；
The grid of described second thin film transistor (TFT) receives and enables signal (Em), the first end electricity of described second thin film transistor (TFT)
Connect the positive pole of described OLED, the second end electrical connection of described second thin film transistor (TFT) is described to drive the second of thin film transistor (TFT)
End；
The grid of described 3rd thin film transistor (TFT) receives n-th grade of scanning signal (SCAN [n]), described 3rd thin film transistor (TFT)
The described first end driving thin film transistor (TFT) of first end electrical connection, the second end electrical connection of described 3rd thin film transistor (TFT) is described
Drive the grid of thin film transistor (TFT)；
Grid reception described enable signal (Em) of described 4th thin film transistor (TFT), the first of described 4th thin film transistor (TFT)
The described first end driving thin film transistor (TFT) of end electrical connection, the second end of described 4th thin film transistor (TFT) electrically connects described voltage
Source；
In glow phase：Described drive thin film transistor (TFT) grid current potential be described data signal voltage with described
Drive the absolute value sum of the threshold voltage of thin film transistor (TFT), described enable signal (Em) is the first level, described (n-1) level
Scanning signal (SCAN [n-1]) and described n-th grade of scanning signal (SCAN [n]) are second electrical level, described second film crystal
Pipe and described 4th thin film transistor (TFT) conducting, described first film transistor, described 3rd thin film transistor (TFT) and described switch are thin
Film transistor is turned off, the path conducting of described voltage source to described OLED negative pole.
Wherein, in driving thin-film transistor gate voltage reset phase：Described enable signal (Em) is second electrical level, institute
Stating (n-1) level scanning signal (SCAN [n-1]) is the first level, and described n-th grade of scanning signal (SCAN [n]) is the second electricity
Flat, described first film transistor conducting, described second thin film transistor (TFT), described 3rd thin film transistor (TFT), described 4th thin film
Transistor and described switching thin-film transistor are turned off；
In data write and threshold voltage compensation stage：Described enable signal (Em) is second electrical level, described (n-1) level
Scanning signal (SCAN [n-1]) is second electrical level, and described n-th grade of scanning signal (SCAN [n]) is the first level, and the described 3rd is thin
Film transistor and the conducting of described switching thin-film transistor, described first film transistor, described second thin film transistor (TFT) and described
4th thin film transistor (TFT) is turned off, and now, the current potential of the described grid driving thin film transistor (TFT) is the voltage of described data signal
With the absolute value sum of the described threshold voltage driving thin film transistor (TFT), wherein, described driving thin-film transistor gate voltage weight
Put the stage, the write of described data and threshold voltage compensation stage, and described glow phase is three continuous stages successively.
Wherein, described compensation circuit also includes the 5th thin film transistor (TFT), described 5th thin film transistor (TFT) include grid, first
End and the second end, the grid of described 5th thin film transistor (TFT) receives described (n-1) level scanning signal (SCAN [n-1]), described
The first end of the 5th thin film transistor (TFT) receives described low level (Vint), and the second end of described 5th thin film transistor (TFT) is electrically connected to
The positive pole of described OLED.
Wherein, described first film transistor, described second thin film transistor (TFT), described 3rd thin film transistor (TFT), described
Four thin film transistor (TFT)s, described 5th thin film transistor (TFT), described switching thin-film transistor and described driving thin film transistor (TFT) are
PTFT, described first level is low level, and described second electrical level is high level；
Or, described first film transistor, described second thin film transistor (TFT), described 3rd thin film transistor (TFT), described
Four thin film transistor (TFT)s, described 5th thin film transistor (TFT), described switching thin-film transistor and described driving thin film transistor (TFT) are
NTFT, described first level is high level, and described second electrical level is low level.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, acceptable
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the schematic diagram of OLED drive in prior art.
Fig. 2 is the schematic diagram of the OLED drive of the present invention first better embodiment.
Fig. 3 is the sequential chart of each signal of OLED drive shown in Fig. 2.
Fig. 4 is the schematic diagram of the OLED drive of the present invention second better embodiment.
Fig. 5 is the sequential chart of each signal of OLED drive shown in Fig. 4.
Fig. 6 is the schematic diagram of the OLED display panel of the present invention one better embodiment.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of not making creative work
Embodiment, broadly falls into the scope of protection of the invention.
See also Fig. 2 and Fig. 3, Fig. 2 is the schematic diagram of the OLED drive of the present invention first better embodiment；
Fig. 3 is the sequential chart of each signal of OLED drive shown in Fig. 2.Described OLED drive 100 is used for producing driving
Electric current is to drive Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED).Described OLED drive
100 include switching thin-film transistor M5, drive thin film transistor (TFT) MD, storage capacitance Cst and compensation circuit 110.Described switch is thin
Film transistor M5 and described driving thin film transistor (TFT) MD all includes grid, first end and the second end.In the present embodiment, described
First end is source electrode, and described second end is drain electrode.In other embodiments, described first end is drain electrode, and described second end is
Source electrode.The first end receiving data signal Data of described switching thin-film transistor M5, the grid of described switching thin-film transistor M5
Receive the n-thth grade of scanning signal SCAN [n], second end of described switching thin-film transistor M5 electrically connects described driving film crystal
Second end of pipe MD.The grid of described driving thin film transistor (TFT) MD is electrically connected to a voltage source by described storage capacitance Cst
Second end of VDD, described driving thin film transistor (TFT) MD is electrically connected to described by described compensation circuit 110 subelement
The positive pole of OLED, the negative pole of described OLED loads low level.Described compensation circuit 110 is used for compensating due to described driving thin film crystalline substance
The drift of threshold voltage of body pipe MD and the change of the driving current of described OLED that brings, and described compensation circuit 110 also uses
Current potential in the grid stablizing described driving thin film transistor (TFT) MD.
Compared to prior art, the OLED drive 100 of the present invention includes compensation circuit 110, described compensation circuit
110 are used for compensating the driving of the described OLED of driving bringing due to the drift of the threshold voltage of described driving thin film transistor (TFT) MD
The change of electric current, and described compensation circuit 110 also stablizes the current potential of the grid of described driving thin film transistor (TFT) MD, thus stabilizing
The driving current of the described OLED of driving of the generation of described drive circuit 100, stablizing of OLED driving current does not interfere with institute
State the luminosity of OLED, and then lift the image quality of the OLED display panel that described OLED drive is applied.
Described compensation circuit 110 includes：First film transistor M1, the second thin film transistor (TFT) M2, the 3rd thin film transistor (TFT)
M3 and the 4th thin film transistor (TFT) M4.Described first film transistor M1, described second thin film transistor (TFT) M2, described 3rd thin film are brilliant
Body pipe M3 and described 4th thin film transistor (TFT) M4 all includes grid, first end and the second end.
The grid of described first film transistor M1 receives (n-1) level scanning signal SCAN [n-1], described the first film
The first end of transistor M1 electrically connects the grid of described driving thin film transistor (TFT) MD, the second end of described first film transistor M1
Receive low level Vint.Wherein, described n-th grade of scanning signal SCAN [n] is compared to described (n-1) level scanning signal SCAN
[n-1] postpones T/M, and wherein, M is positive integer, and T is the cycle of scanning signal.
The grid of described second thin film transistor (TFT) M2 receives and enables signal Em, the first end of described second thin film transistor (TFT) M2
Electrically connect the positive pole of described OLED, second end of described second thin film transistor (TFT) M2 electrically connects described driving thin film transistor (TFT) MD's
Second end.
The grid of described 3rd thin film transistor (TFT) M3 receives n-th grade of scanning signal SCAN [n], described 3rd thin film transistor (TFT)
The first end of M3 electrically connects the first end of described driving thin film transistor (TFT) MD, and second end of described 3rd thin film transistor (TFT) M3 is electrically connected
Connect the grid of described driving thin film transistor (TFT) MD.
The grid of described 4th thin film transistor (TFT) M4 receives described enable signal Em, and the of described 4th thin film transistor (TFT) M4
One end electrically connects the first end of described driving thin film transistor (TFT) MD, and the second end electrical connection of described 4th thin film transistor (TFT) M4 is described
Voltage source VDD.
(represented with initial in figure 3) driving in thin-film transistor gate voltage reset phase：Described enable signal
Em is second electrical level, and described (n-1) level scanning signal SCAN [n-1] is the first level, described n-th grade of scanning signal SCAN
[n] is second electrical level, described first film transistor M1 conducting, described second thin film transistor (TFT) M2, described 3rd film crystal
Pipe M3, described 4th thin film transistor (TFT) M4 and described switching thin-film transistor M5 are turned off.Now, described low level Vint is passed through
First film transistor M1 of conducting is delivered to the grid of described driving thin film transistor (TFT) MD.
In data write and threshold voltage compensation stage (being represented with programming in figure 3)：Described enable signal Em
For second electrical level, described (n-1) level scanning signal SCAN [n-1] is second electrical level, described n-th grade of scanning signal SCAN [n]
For the first level, described 3rd thin film transistor (TFT) M3 and described switching thin-film transistor M5 conducting, described first film transistor
M1, described second thin film transistor (TFT) M2 and described 4th thin film transistor (TFT) M4 are turned off, now, described driving thin film transistor (TFT) MD
Grid current potential be described data signal Data voltage VdataExhausted with the threshold voltage of described driving thin film transistor (TFT) MD
To value | Vth| sum.
Due to described 3rd thin film transistor (TFT) M3 conducting, the grid of described driving thin film transistor (TFT) MD and described driving thin film
First end (being source electrode in Fig. 3) short circuit of transistor MD, described driving thin film transistor (TFT) MD is equivalent to diode.Retouch for convenience
State, the grid of described driving thin film transistor (TFT) MD and described storage capacitance Cst and with described first film transistor M1 the
The point that one end is intersected is labeled as A point.When described driving thin film transistor (TFT) MD is equivalent to diode, described data signal Data via
The switching thin-film transistor M5 of conducting charges to A point, until A point stores the threshold voltage V of described driving thin film transistor (TFT) MDth,
Now, the current potential of A point is：VA=Vdata+|Vth|.Wherein, VARepresent the current potential of A point, VdataRepresent the electricity of data signal Data
Pressure, VthRepresent the threshold voltage driving thin film transistor (TFT) MD.
(represented with emission in figure 3) in glow phase：The current potential of the grid of described driving thin film transistor (TFT) MD
Absolute value for the threshold voltage of the voltage Vdata and described driving thin film transistor (TFT) MD of described data signal Data | Vth| it
With described enable signal Em is the first level, described (n-1) level scanning signal SCAN [n-1] and described n-th grade of scanning signal
SCAN [n] is second electrical level, and described second thin film transistor (TFT) M2 and described 4th thin film transistor (TFT) M4 turn on, and described first is thin
Film transistor M1, described 3rd thin film transistor (TFT) M3 and described switching thin-film transistor M5 are turned off, and described voltage source VDD is to institute
State the path conducting of OLED negative pole, the grid voltage of described driving thin film transistor (TFT) MD controls the driving of the described OLED of described driving
The size of electric current.Now, described OLED drive 100 drives described OLED to light.Wherein, described driving thin film transistor (TFT) grid
Pole tension reset phase, described data write and threshold voltage compensation stage, and described glow phase is continuous successively for three
Stage.
The size of the driving current of described OLED that described OLED drive 100 produces is：IOLED=k [VDD-(Vdata-
|Vth|)-|Vth|]2=k (VDD-Vdata)2.Wherein, IOLEDRepresent the driving current of OLED；K is described driving thin film transistor (TFT) MD
Current amplification factor, by described driving thin film transistor (TFT) MD itself characteristic determine；VDDVoltage for voltage source VDD；Vdata
Voltage for data signal Data.As can be seen here, driving current I of the OLED that the OLED drive 100 of the present invention producesOLED
Threshold voltage V with described driving thin film transistor (TFT) MDthUnrelated.Therefore, compared to prior art, the OLED of the present invention drives electricity
The driving current of the OLED that road produces will not be with the threshold voltage V driving thin film transistor (TFT) MDthDrift and change, enter
And stablize the driving current of described OLED, OLED driving current stablize the luminosity not interfering with described OLED, enter
And lift the image quality of the OLED display panel that described OLED drive is applied.
Describe for convenience, the point of the second described low level Vint of end reception of described first film transistor M1 is labeled as
B point.The first end (in figure 3 for source electrode) of described driving thin film transistor (TFT) MD and the first end of described 3rd thin film transistor (TFT) M3
Intersection point be labeled as C point.In glow phase, because described 3rd thin film transistor (TFT) M3 is in cut-off state, and the described 3rd
The first end of thin film transistor (TFT) M3 electrically connects the first end of described driving thin film transistor (TFT) MD, described 3rd thin film transistor (TFT) M3's
Second end electrically connects the grid of described driving thin film transistor (TFT) MD, and therefore, the current potential of C point is higher than the current potential of A point, and the described 3rd is thin
The leakage current direction of film transistor M3 is to flow to A point by C point, then the current potential of described A point can raise.Again because the current potential of A point is high
In the current potential of B point, therefore, the leakage current direction of described first film transistor M1 is to flow to B point, the current potential of described A point by A point
Can be lowered.As can be seen here, in glow phase, the presence of the leakage current of the 3rd thin film transistor (TFT) M3 can lift the current potential of A point,
And the presence of the leakage current of described first film transistor M1 can reduce the current potential of A point, therefore, because described the first film crystal
Pipe M1 and the collective effect of described 3rd thin film transistor (TFT) M3, the current potential of A point maintains more stable level, i.e. described driving
The current potential of the grid of thin film transistor (TFT) MD maintains more stable level.So that the driving that described drive circuit 100 produces
The driving current of described OLED is relatively stable.
In the present embodiment, described first film transistor M1, described second thin film transistor (TFT) M2, described 3rd thin film
Transistor M3, described 4th thin film transistor (TFT) M4, described switching thin-film transistor M5 and described driving thin film transistor (TFT) MD are
PTFT (P Thin Film Transistor), described first level is low level, and described second electrical level is high level.
In other embodiments, described first film transistor M1, described second thin film transistor (TFT) M2, the described 3rd thin
Film transistor M3, described 4th thin film transistor (TFT) M4, described switching thin-film transistor M5 and described driving thin film transistor (TFT) MD are equal
For NTFT (N Thin Film Transistor), described first level is high level, and described second electrical level is low level.
See also Fig. 4 and Fig. 5, Fig. 4 is the schematic diagram of the OLED drive of the present invention second better embodiment；
Fig. 5 is the sequential chart of each signal of OLED drive shown in Fig. 4.Shown in OLED drive shown in Fig. 4 and Fig. 2
OLED drive is essentially identical, and each signal in Fig. 5 is identical with each signal in Fig. 3.OLED shown in Fig. 4 drives electricity
A road thin film transistor (TFT) more than in the OLED drive shown in Fig. 2：5th thin film transistor (TFT) M6.In present embodiment
OLED drive repeats no more compared to the identical part in the OLED circuit in first embodiment of the invention.Described
Five thin film transistor (TFT) M6 include grid, first end and the second end.The grid of described 5th thin film transistor (TFT) M6 receives described (n-
1) first end described low level Vint of reception of level scanning signal SCAN [n-1], described 5th thin film transistor (TFT) M6, the described 5th
Second end of thin film transistor (TFT) M6 is electrically connected to the positive pole of described OLED.In driving thin-film transistor gate voltage reset phase
(being represented with initial in Figure 5), described 5th thin film transistor (TFT) M6 can largely shunt described driving film crystal
The electric leakage of pipe MD, thus solve to drive thin film transistor (TFT) in the described electric leakage driving in thin-film transistor gate voltage reset phase
The problem lighting on a small quantity that the described OLED that stream causes cannot complete switch off and produce.
In the present embodiment, described first film transistor M1, described second thin film transistor (TFT) M2, described 3rd thin film
Transistor M3, described 4th thin film transistor (TFT) M4, described 5th thin film transistor (TFT) M6, described switching thin-film transistor M5 and described
Thin film transistor (TFT) MD is driven to be PTFT, described first level is low level, described second electrical level is high level.
In other embodiments, described first film transistor M1, described second thin film transistor (TFT) M2, the described 3rd thin
Film transistor M3, described 4th thin film transistor (TFT) M4, described 5th thin film transistor (TFT) M6, described switching thin-film transistor M5 and institute
State driving thin film transistor (TFT) MD and be NTFT, described first level is high level, described second electrical level is low level.
Present invention also offers a kind of OLED display panel 10, refer to Fig. 6, Fig. 6 is the present invention one better embodiment
OLED display panel schematic diagram.The OLED display panel 10 of the present invention includes the OLED that aforementioned any one embodiment is introduced
Drive circuit 100, will not be described here.
Above disclosed be only a kind of preferred embodiment of the present invention, certainly the power of the present invention can not be limited with this
Sharp scope, one of ordinary skill in the art will appreciate that realize all or part of flow process of above-described embodiment, and according to present invention power
Profit requires made equivalent variations, still falls within the scope that invention is covered.
Claims (10)
1. a kind of OLED drive is it is characterised in that described OLED drive is used for producing driving current to drive OLED,
Described OLED drive includes switching thin-film transistor, drives thin film transistor (TFT), storage capacitance and compensation circuit, described opens
Close thin film transistor (TFT) and described driving thin film transistor (TFT) all includes grid, first end and the second end, described switching thin-film transistor
First end receiving data signal, the grid of described switching thin-film transistor receives n-th grade of scanning signal (SCAN [n]), described
Described second end driving thin film transistor (TFT) of second end electrical connection of switching thin-film transistor, the grid of described driving thin film transistor (TFT)
Pole is electrically connected to a voltage source by described storage capacitance, and the second end of described driving thin film transistor (TFT) is by described compensation circuit
In subelement be electrically connected to the positive pole of described OLED, the negative pole of described OLED loads low level, and described compensation circuit is used for
Compensate the change of the driving current of the described OLED bringing due to the drift of the described threshold voltage driving thin film transistor (TFT), and
Described compensation circuit is additionally operable to stablize the current potential of the described grid driving thin film transistor (TFT)；Wherein, described first end is source electrode, institute
Stating the second end is drain electrode；Or described first end is drain electrode, described second end is source electrode.
2. OLED drive as claimed in claim 1 is it is characterised in that described compensation circuit includes：The first film crystal
Pipe, the second thin film transistor (TFT), the 3rd thin film transistor (TFT) and the 4th thin film transistor (TFT), described first film transistor, described second
Thin film transistor (TFT), described 3rd thin film transistor (TFT) and described 4th thin film transistor (TFT) all include grid, first end and the second end；
The grid of described first film transistor receives (n-1) level scanning signal (SCAN [n-1]), described the first film crystal
The described grid driving thin film transistor (TFT) of first end electrical connection of pipe, the second end of described first film transistor receives low level
(Vint), wherein, described n-th grade of scanning signal (SCAN [n]) is compared to described (n-1) level scanning signal (SCAN [n-1])
Postpone T/M, wherein, M is positive integer, and T is the cycle of scanning signal；
The grid of described second thin film transistor (TFT) receives and enables signal (Em), the first end electrical connection of described second thin film transistor (TFT)
The positive pole of described OLED, described second end driving thin film transistor (TFT) of the second end electrical connection of described second thin film transistor (TFT)；
The grid of described 3rd thin film transistor (TFT) receives n-th grade of scanning signal (SCAN [n]), and the of described 3rd thin film transistor (TFT)
The described first end driving thin film transistor (TFT) of one end electrical connection, the second end of described 3rd thin film transistor (TFT) electrically connects described driving
The grid of thin film transistor (TFT)；
The grid of described 4th thin film transistor (TFT) receives described enable signal (Em), the first end electricity of described 4th thin film transistor (TFT)
Connect the described first end driving thin film transistor (TFT), the second end of described 4th thin film transistor (TFT) electrically connects described voltage source；
In glow phase：The current potential of the described grid driving thin film transistor (TFT) is the voltage of described data signal and described driving
The absolute value sum of the threshold voltage of thin film transistor (TFT), described enable signal (Em) is the first level, and described (n-1) level scans
Signal (SCAN [n-1]) and described n-th grade of scanning signal (SCAN [n]) are second electrical level, described second thin film transistor (TFT) and
Described 4th thin film transistor (TFT) conducting, described first film transistor, described 3rd thin film transistor (TFT) and described switch film are brilliant
Body pipe is turned off, the path conducting of described voltage source to described OLED negative pole, the described grid voltage control driving thin film transistor (TFT)
The size of the driving current of the system described OLED of described driving.
3. OLED drive as claimed in claim 2 is it is characterised in that driving thin-film transistor gate voltage to reset rank
In section：Described enable signal (Em) is second electrical level, and described (n-1) level scanning signal (SCAN [n-1]) is the first level, institute
Stating n-th grade of scanning signal (SCAN [n]) is second electrical level, described first film transistor conducting, described second thin film transistor (TFT),
Described 3rd thin film transistor (TFT), described 4th thin film transistor (TFT) and described switching thin-film transistor are turned off；
In data write and threshold voltage compensation stage：Described enable signal (Em) is second electrical level, and described (n-1) level scans
Signal (SCAN [n-1]) is second electrical level, and described n-th grade of scanning signal (SCAN [n]) is the first level, and described 3rd thin film is brilliant
Body pipe and the conducting of described switching thin-film transistor, described first film transistor, described second thin film transistor (TFT) and the described 4th
Thin film transistor (TFT) is turned off, and now, the current potential of the described grid driving thin film transistor (TFT) is voltage and the institute of described data signal
State the absolute value sum of the threshold voltage driving thin film transistor (TFT), wherein, described driving thin-film transistor gate voltage resets rank
Section, the write of described data and threshold voltage compensation stage, and described glow phase is three continuous stages successively.
4. OLED drive as claimed in claim 3 is it is characterised in that described compensation circuit also includes the 5th film crystal
Pipe, described 5th thin film transistor (TFT) includes grid, first end and the second end, and the grid reception of described 5th thin film transistor (TFT) is described
(n-1) level scanning signal (SCAN [n-1]), the first end of described 5th thin film transistor (TFT) receives described low level (Vint),
Second end of described 5th thin film transistor (TFT) is electrically connected to the positive pole of described OLED.
5. OLED drive as claimed in claim 4 is it is characterised in that described first film transistor, described second thin
Film transistor, described 3rd thin film transistor (TFT), described 4th thin film transistor (TFT), described 5th thin film transistor (TFT), described switch are thin
Film transistor and described driving thin film transistor (TFT) are PTFT, and described first level is low level, and described second electrical level is high electricity
Flat；Or,
Described first film transistor, described second thin film transistor (TFT), described 3rd thin film transistor (TFT), described 4th film crystal
Pipe, described 5th thin film transistor (TFT), described switching thin-film transistor and described driving thin film transistor (TFT) are NTFT, and described first
Level is high level, and described second electrical level is low level.
6. a kind of OLED display panel is it is characterised in that described OLED display panel includes OLED drive and OLED, described
OLED drive is used for producing driving current to drive OLED, and described OLED drive includes switching thin-film transistor, drive
Dynamic thin film transistor (TFT), storage capacitance and compensation circuit, described switching thin-film transistor and described driving thin film transistor (TFT) all wrap
Include grid, first end and the second end, the first end receiving data signal of described switching thin-film transistor, described switch film crystal
The grid of pipe receives n-th grade of scanning signal (SCAN [n]), and the described driving of the second end electrical connection of described switching thin-film transistor is thin
Second end of film transistor, the grid of described driving thin film transistor (TFT) is electrically connected to a voltage source, institute by described storage capacitance
State the positive pole driving the second end of thin film transistor (TFT) to be electrically connected to described OLED by the subelement in described compensation circuit, institute
The negative pole stating OLED loads low level, and described compensation circuit is used for compensating due to the described threshold voltage driving thin film transistor (TFT)
Drift and the change of the driving current of described OLED that brings, and described compensation circuit is additionally operable to stablize described driving film crystal
The current potential of the grid of pipe；Wherein, described first end is source electrode, and described second end is drain electrode；Or described first end is drain electrode, institute
Stating the second end is source electrode.
7. OLED display panel as claimed in claim 6 is it is characterised in that described compensation circuit includes：The first film crystal
Pipe, the second thin film transistor (TFT), the 3rd thin film transistor (TFT) and the 4th thin film transistor (TFT), described first film transistor, described second
Thin film transistor (TFT), described 3rd thin film transistor (TFT) and described 4th thin film transistor (TFT) all include grid, first end and the second end；
The grid of described first film transistor receives (n-1) level scanning signal (SCAN [n-1]), described the first film crystal
The described grid driving thin film transistor (TFT) of first end electrical connection of pipe, the second end of described first film transistor receives low level
(Vint), wherein, described n-th grade of scanning signal (SCAN [n]) is compared to described (n-1) level scanning signal (SCAN [n-1])
Postpone T/M, wherein, M is positive integer, and T is the cycle of scanning signal；
The grid of described second thin film transistor (TFT) receives and enables signal (Em), the first end electrical connection of described second thin film transistor (TFT)
The positive pole of described OLED, described second end driving thin film transistor (TFT) of the second end electrical connection of described second thin film transistor (TFT)；
The grid of described 3rd thin film transistor (TFT) receives n-th grade of scanning signal (SCAN [n]), and the of described 3rd thin film transistor (TFT)
The described first end driving thin film transistor (TFT) of one end electrical connection, the second end of described 3rd thin film transistor (TFT) electrically connects described driving
The grid of thin film transistor (TFT)；
The grid of described 4th thin film transistor (TFT) receives described enable signal (Em), the first end electricity of described 4th thin film transistor (TFT)
Connect the described first end driving thin film transistor (TFT), the second end of described 4th thin film transistor (TFT) electrically connects described voltage source；
In glow phase：The current potential of the described grid driving thin film transistor (TFT) is the voltage of described data signal and described driving
The absolute value sum of the threshold voltage of thin film transistor (TFT), described enable signal (Em) is the first level, and described (n-1) level scans
Signal (SCAN [n-1]) and described n-th grade of scanning signal (SCAN [n]) are second electrical level, described second thin film transistor (TFT) and
Described 4th thin film transistor (TFT) conducting, described first film transistor, described 3rd thin film transistor (TFT) and described switch film are brilliant
Body pipe is turned off, the path conducting of described voltage source to described OLED negative pole.
8. OLED display panel as claimed in claim 7 is it is characterised in that driving thin-film transistor gate voltage to reset rank
In section：Described enable signal (Em) is second electrical level, and described (n-1) level scanning signal (SCAN [n-1]) is the first level, institute
Stating n-th grade of scanning signal (SCAN [n]) is second electrical level, described first film transistor conducting, described second thin film transistor (TFT),
Described 3rd thin film transistor (TFT), described 4th thin film transistor (TFT) and described switching thin-film transistor are turned off；
In data write and threshold voltage compensation stage：Described enable signal (Em) is second electrical level, and described (n-1) level scans
Signal (SCAN [n-1]) is second electrical level, and described n-th grade of scanning signal (SCAN [n]) is the first level, and described 3rd thin film is brilliant
Body pipe and the conducting of described switching thin-film transistor, described first film transistor, described second thin film transistor (TFT) and the described 4th
Thin film transistor (TFT) is turned off, and now, the current potential of the described grid driving thin film transistor (TFT) is voltage and the institute of described data signal
State the absolute value sum of the threshold voltage driving thin film transistor (TFT), wherein, described driving thin-film transistor gate voltage resets rank
Section, the write of described data and threshold voltage compensation stage, and described glow phase is three continuous stages successively.
9. OLED display panel as claimed in claim 8 is it is characterised in that described compensation circuit also includes the 5th film crystal
Pipe, described 5th thin film transistor (TFT) includes grid, first end and the second end, and the grid reception of described 5th thin film transistor (TFT) is described
(n-1) level scanning signal (SCAN [n-1]), the first end of described 5th thin film transistor (TFT) receives described low level (Vint),
Second end of described 5th thin film transistor (TFT) is electrically connected to the positive pole of described OLED.
10. OLED display panel as claimed in claim 9 is it is characterised in that described first film transistor, described second thin
Film transistor, described 3rd thin film transistor (TFT), described 4th thin film transistor (TFT), described 5th thin film transistor (TFT), described switch are thin
Film transistor and described driving thin film transistor (TFT) are PTFT, and described first level is low level, and described second electrical level is high electricity
Flat；
Or,
Described first film transistor, described second thin film transistor (TFT), described 3rd thin film transistor (TFT), described 4th film crystal
Pipe, described 5th thin film transistor (TFT), described switching thin-film transistor and described driving thin film transistor (TFT) are NTFT, and described first
Level is high level, and described second electrical level is low level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611079525.4A CN106448554A (en) | 2016-11-30 | 2016-11-30 | OLED (organic light-emitting diode) driving circuit and OLED display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611079525.4A CN106448554A (en) | 2016-11-30 | 2016-11-30 | OLED (organic light-emitting diode) driving circuit and OLED display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106448554A true CN106448554A (en) | 2017-02-22 |
Family
ID=58223168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611079525.4A Pending CN106448554A (en) | 2016-11-30 | 2016-11-30 | OLED (organic light-emitting diode) driving circuit and OLED display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106448554A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107749279A (en) * | 2017-11-15 | 2018-03-02 | 武汉华星光电半导体显示技术有限公司 | OLED drive and AMOLED display panels |
| CN108288457A (en) * | 2018-01-19 | 2018-07-17 | 昆山国显光电有限公司 | Pixel circuit and its driving method, display device |
| CN109410832A (en) * | 2017-08-17 | 2019-03-01 | 苹果公司 | Electronic equipment with low refresh rate displays pixel |
| CN109493806A (en) * | 2019-01-28 | 2019-03-19 | 苹果公司 | Electronic equipment including the display with oxide transistor threshold voltage compensation |
| CN111754920A (en) * | 2020-07-17 | 2020-10-09 | 武汉华星光电半导体显示技术有限公司 | Pixel driving circuit, driving method thereof and display panel |
| CN111863892A (en) * | 2020-07-13 | 2020-10-30 | 武汉华星光电半导体显示技术有限公司 | Display device and method for manufacturing the same |
| CN112002284A (en) * | 2020-08-07 | 2020-11-27 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| WO2022110247A1 (en) * | 2020-11-30 | 2022-06-02 | 京东方科技集团股份有限公司 | Drive circuit, driving method thereof, and display device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1964585A (en) * | 2005-11-09 | 2007-05-16 | 三星Sdi株式会社 | Pixel and organic light emitting display device using the same |
| CN101231821A (en) * | 2006-12-21 | 2008-07-30 | 三星Sdi株式会社 | Organic light emitting diode display and driving method thereof |
| US20120139957A1 (en) * | 2010-12-06 | 2012-06-07 | Sang-Moo Choi | Pixel and organic light emitting display device using the pixel |
| CN103035195A (en) * | 2011-10-05 | 2013-04-10 | 胜华科技股份有限公司 | Light emitting element drive circuit, pixel circuit, display panel and display |
| CN104091562A (en) * | 2014-06-27 | 2014-10-08 | 京东方科技集团股份有限公司 | Pixel circuit, display panel and display device |
| CN104282263A (en) * | 2014-09-25 | 2015-01-14 | 京东方科技集团股份有限公司 | Pixel circuit, drive method thereof, display panel and display device |
| CN104485071A (en) * | 2014-12-22 | 2015-04-01 | 昆山国显光电有限公司 | Pixel circuit, driving method thereof and active matrix OLED (organic lighting emitting diode) |
| CN105575331A (en) * | 2015-11-25 | 2016-05-11 | 友达光电股份有限公司 | Pixel voltage compensation circuit |
-
2016
- 2016-11-30 CN CN201611079525.4A patent/CN106448554A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1964585A (en) * | 2005-11-09 | 2007-05-16 | 三星Sdi株式会社 | Pixel and organic light emitting display device using the same |
| CN101231821A (en) * | 2006-12-21 | 2008-07-30 | 三星Sdi株式会社 | Organic light emitting diode display and driving method thereof |
| US20120139957A1 (en) * | 2010-12-06 | 2012-06-07 | Sang-Moo Choi | Pixel and organic light emitting display device using the pixel |
| CN103035195A (en) * | 2011-10-05 | 2013-04-10 | 胜华科技股份有限公司 | Light emitting element drive circuit, pixel circuit, display panel and display |
| CN104091562A (en) * | 2014-06-27 | 2014-10-08 | 京东方科技集团股份有限公司 | Pixel circuit, display panel and display device |
| CN104282263A (en) * | 2014-09-25 | 2015-01-14 | 京东方科技集团股份有限公司 | Pixel circuit, drive method thereof, display panel and display device |
| CN104485071A (en) * | 2014-12-22 | 2015-04-01 | 昆山国显光电有限公司 | Pixel circuit, driving method thereof and active matrix OLED (organic lighting emitting diode) |
| CN105575331A (en) * | 2015-11-25 | 2016-05-11 | 友达光电股份有限公司 | Pixel voltage compensation circuit |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109410832B (en) * | 2017-08-17 | 2021-06-11 | 苹果公司 | Electronic device with low refresh rate display pixels |
| US11823621B2 (en) | 2017-08-17 | 2023-11-21 | Apple Inc. | Electronic devices with low refresh rate display pixels |
| CN109410832A (en) * | 2017-08-17 | 2019-03-01 | 苹果公司 | Electronic equipment with low refresh rate displays pixel |
| US11257426B2 (en) | 2017-08-17 | 2022-02-22 | Apple Inc. | Electronic devices with low refresh rate display pixels |
| WO2019095441A1 (en) * | 2017-11-15 | 2019-05-23 | 武汉华星光电半导体显示技术有限公司 | Oled drive circuit and amoled display panel |
| CN107749279B (en) * | 2017-11-15 | 2019-08-30 | 武汉华星光电半导体显示技术有限公司 | OLED drive and AMOLED display panel |
| US10600366B2 (en) | 2017-11-15 | 2020-03-24 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED driving circuit and AMOLED display panel |
| CN107749279A (en) * | 2017-11-15 | 2018-03-02 | 武汉华星光电半导体显示技术有限公司 | OLED drive and AMOLED display panels |
| CN108288457A (en) * | 2018-01-19 | 2018-07-17 | 昆山国显光电有限公司 | Pixel circuit and its driving method, display device |
| US11081053B2 (en) | 2019-01-28 | 2021-08-03 | Apple Inc. | Electronic devices having displays with compensation for oxide transistor threshold voltage |
| CN109493806A (en) * | 2019-01-28 | 2019-03-19 | 苹果公司 | Electronic equipment including the display with oxide transistor threshold voltage compensation |
| CN111863892A (en) * | 2020-07-13 | 2020-10-30 | 武汉华星光电半导体显示技术有限公司 | Display device and method for manufacturing the same |
| CN111863892B (en) * | 2020-07-13 | 2022-08-23 | 武汉华星光电半导体显示技术有限公司 | Display device and method for manufacturing the same |
| CN111754920A (en) * | 2020-07-17 | 2020-10-09 | 武汉华星光电半导体显示技术有限公司 | Pixel driving circuit, driving method thereof and display panel |
| CN112002284A (en) * | 2020-08-07 | 2020-11-27 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| WO2022110247A1 (en) * | 2020-11-30 | 2022-06-02 | 京东方科技集团股份有限公司 | Drive circuit, driving method thereof, and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106448554A (en) | OLED (organic light-emitting diode) driving circuit and OLED display panel | |
| CN106601191B (en) | OLED drive and OLED display panel | |
| CN104680976B (en) | Pixel compensation circuit, display device and driving method | |
| CN106531075A (en) | Organic light-emitting pixel driving circuit, driving method and organic light-emitting display panel | |
| CN105427805B (en) | Pixel-driving circuit, method, display panel and display device | |
| US20200211464A1 (en) | Pixel circuit and driving method thereof, and display panel | |
| CN107424563A (en) | Organic LED display device | |
| CN104485074B (en) | Pixel-driving circuit, method and display device | |
| CN103971638B (en) | Pixel-driving circuit, driving method, array base palte and display device | |
| CN106652912A (en) | Organic light emitting pixel driving circuit, driving method and organic light emitting display panel | |
| CN106157895B (en) | A kind of organic light emitting display panel and its driving method | |
| CN104809989A (en) | Pixel circuit, drive method thereof and related device | |
| CN105913802B (en) | A kind of organic electroluminescent LED display panel and its driving method | |
| CN102651196B (en) | Drive circuit and drive method of AMOLED (Active Matrix Organic Light-Emitting Diode), and display device | |
| CN105448234B (en) | Pixel circuit and its driving method and active matrix/organic light emitting display | |
| CN103198793A (en) | Pixel circuit, drive method and display device thereof | |
| CN106486063A (en) | Pixel-driving circuit and its driving method, display floater and display device | |
| CN106057126A (en) | Pixel circuit and drive method thereof | |
| CN108281116A (en) | Scanner driver and display device including the scanner driver | |
| CN105489168A (en) | Pixel driving circuit, pixel driving method and display device | |
| CN106782322A (en) | AMOLED pixel-driving circuits and AMOLED image element driving methods | |
| CN107516488A (en) | A kind of image element circuit, its driving method, display panel and display device | |
| CN108335671B (en) | AMOLED pixel-driving circuit and driving method | |
| CN109559686A (en) | Pixel circuit, driving method, electroluminescence display panel and display device | |
| CN107749279A (en) | OLED drive and AMOLED display panels |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170222 |
|
| WD01 | Invention patent application deemed withdrawn after publication |