CN106441644A - Silicon piezoresistive pressure sensor temperature drift compensation method - Google Patents

Silicon piezoresistive pressure sensor temperature drift compensation method Download PDF

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Publication number
CN106441644A
CN106441644A CN201610353836.9A CN201610353836A CN106441644A CN 106441644 A CN106441644 A CN 106441644A CN 201610353836 A CN201610353836 A CN 201610353836A CN 106441644 A CN106441644 A CN 106441644A
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China
Prior art keywords
temperature
formula
output value
pressure sensor
sensitivity
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CN201610353836.9A
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焦祥锟
彭成庆
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NANJING GAOHUA TECHNOLOGY Co Ltd
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NANJING GAOHUA TECHNOLOGY Co Ltd
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Priority to CN201610353836.9A priority Critical patent/CN106441644A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

The invention relates to a silicon piezoresistive pressure sensor temperature drift compensation method. The pressure output value UT' after temperature compensation under a certain temperature T DEG C is a<0>+(U<r>-a<r>/b<r>)xb(0) through linear compensation of the zero position and the sensitivity of a pressure sensor line. The beneficial effects are that the error of a silicon piezoresistive pressure sensor caused by the change of temperature can be effectively avoided, and nonlinear correction, zero position temperature compensation and sensitivity temperature compensation can be performed on the pressure sensor.

Description

A kind of compensation method of silicon piezoresistance type pressure sensor temperature drift
Technical field
The present invention relates to being applied to the correlative technology field of the circuit design of the signal condition of silicon piezoresistance type pressure sensor, Particularly a kind of compensation method of the temperature drift of pressure sensor.
Background technology
Silicon piezoresistance type pressure sensor utilizes Wheatstone bridge principle to measure object pressure value, usually in circular silicon Four equal resistance are diffused out on diaphragm, they is linked to be a Wheatstone bridge, as shown in Figure 1.
Due to the characteristic of silicon materials, silicon piezoresistance type pressure sensor pressure response characteristic at different temperatures is inconsistent 's.In order to avoid the impact to pressure sensor for the temperature, improve the linear characteristic under different temperature points of pressure sensor, Need to carry out corresponding temperature-compensating to pressure sensor.
Content of the invention
Present invention aim to overcome that the deficiency of above prior art, provide a kind of silicon piezoresistance type pressure sensor temperature drift The compensation method moving, specifically has technical scheme below to realize：
The compensation method of described silicon piezoresistance type pressure sensor temperature drift, comprises the steps：
1) in temperature range [T1, T2] in, T1、T2It is temperature value, and T1<T2, choose several temperature spots T, keep temperature T is constant for degree, the pressure output value under collection different pressures P, by linear fit method, calculates the single order line of pressure output value Property formula, further according to formula first-order linear formula by second-order linearity matching is carried out to zero point a of each temperature spot and sensitivity b, meter Calculate second-order fit formula a (T) and the b (T) of each temperature spot, obtain corresponding zero point a of different temperature points TTWith sensitivity bT；
2) in temperature range [T1, T2] in, set the known matching temperature spot T choosing, be located by judging this temperature spot T Matching temperature range [T3, T4], T1、T2、T3、T4It is temperature value, and T1＜ T3≤T≤T4＜ T2, by linear difference formulaCalculate pressure output value U of this temperature spot TT, wherein U3、U4It is respectively temperature spot T3、T4 Under pressure output value；
3) calculate the pressure output value U ' after compensation according to formula (2)T, in formula (2), a0It is zero of the sensor under normal temperature Position, b0It is the sensitivity of the sensor under normal temperature
The design further of the described compensation method of silicon piezoresistance type pressure sensor temperature drift is, described step 1) In first-order linear formula such as formula (1), a in formula (1)T、bTBe respectively the zero-bit of sensor at a certain temperature T DEG C with sensitive Degree, P is the measured pressure value of sensor；UTFor cell pressure output valve
UT=aT+bT×P(1).
The design further of the described compensation method of silicon piezoresistance type pressure sensor temperature drift is, described step 1) In
A (T)=a0+α(T-T0)*Y(FS)
B (T)=b0+β(T-T0)*Y(FS) (3)
Wherein, α is zero-bit temperature coefficient；β is sensitivity temperature coefficient, and Y (FS) is Full-span output value.
Advantages of the present invention is as follows：
The invention provides silicon piezoresistance type pressure sensor temperature drift compensation method, silicon piezoresistance type pressure can be applied The signal conditioning circuit design of sensor, improves the output stability of silicon piezoresistance type pressure sensor.
Brief description
Fig. 1 is a kind of theory diagram of the compensation method of present invention silicon piezoresistance type pressure sensor temperature drift.
Fig. 2 is the Wheatstone bridge schematic diagram of silicon piezoresistance type pressure sensor.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention program is described in detail.
The compensation method of the silicon piezoresistance type pressure sensor temperature drift of the present embodiment, comprises the steps：
1) in temperature range [T1, T2] in, T1、T2It is temperature value, and T1＜ T2, choose several temperature spots T, keep temperature T is constant for degree, the pressure output value under collection different pressures P, by linear fit method, calculates the single order line of pressure output value Property formula, further according to formula first-order linear formula by second-order linearity matching is carried out to zero point a of each temperature spot and sensitivity b, meter Calculate second-order fit formula a (T) and the b (T) of each temperature spot, not equality of temperature is obtained according to described second-order fit formula a (T) and b (T) Degree corresponding zero point a of point TTWith sensitivity bT；
2) in temperature range [T1, T2] in, set the known matching temperature spot T choosing, be located by judging this temperature spot T Matching temperature range [T3, T4], T1、T2、T3、T4It is temperature value, and T1＜ T3≤T≤T4＜ T2, by linear difference formulaCalculate pressure output value U of this temperature spot TT, wherein U3、U4It is respectively temperature spot T3、T4 Under pressure output value；
3) calculate the pressure output value U ' after compensation according to formula (2)T, in formula (2), a0It is zero of the sensor under normal temperature Position, b0It is the sensitivity of the sensor under normal temperature
Step 1) in first-order linear formula such as formula (1), a in formula (1)T、bTIt is respectively the sensing at a certain temperature T DEG C The zero-bit of device and sensitivity, P is the measured pressure value of sensor；UTFor cell pressure output valve
UT=aT+bT×P(1).
Pressure sensor can be obtained by formula 1 to be output as at room temperature：
U0=a0+b0×P (4)
Wherein,
A (T)=a0+α(T-T0)*Y(FS)
B (T)=b0+β(T-T0)*Y(FS) (3)
Wherein, α is zero-bit temperature coefficient；β is sensitivity temperature coefficient, and Y (FS) is Full-span output value.
Can be obtained further by formula (1), (2), (3), (4), temperature compensated after pressure output value U 'TFor：
The response of silicon piezoresistance type pressure sensor changes with temperature change, as shown in table 1.The range of this sensor is 0～35kPa (gauge pressure), compensation temperature is 0～50 DEG C, and excitation power supply is 1mA.
The pressure output value that table 1 silicon pressure sensor varies with temperature
Keeping temperature T is constant, to pressure P and output valve UTIt is fitted, obtain first-order linear fitting formula；To not equality of temperature Zero-bit a under degree and sensitivity b are fitted, and obtain second-order linearity fitting formula a (T) and b (T).
Work as TA≤T≤TBWhen, T DEG C of pressure output value is：
The pressure output value of other temperature spots of sensor can be extrapolated by formula (5), result is substituted into formula (4) can be compensated Pressure output value afterwards.
After compensating through inventive algorithm, the compensation result of each point, as shown in table 2 below：
The compensation result of each point after table 2 algorithm temperature-compensating
After compensating through inventive algorithm, the compensation result of remaining temperature spot, as shown in table 3 below：
The compensation result of each point after table 3 linear interpolation algorithm temperature-compensating
The above, the only present invention preferably specific embodiment, but protection scope of the present invention is not limited to this, appoints What those familiar with the art the invention discloses technical scope in, technology according to the present invention scheme and its this Inventive concept equivalent or change in addition, is all included within the scope of the present invention.

Claims (3)

1. a kind of compensation method of silicon piezoresistance type pressure sensor temperature drift, comprises the steps：
1) in temperature range [T1, T2] in, T1、T2It is temperature value, and T1<T2, choose several temperature spots T, keeping temperature T is not Become, the pressure output value under collection different pressures P, by linear fit method, the first-order linear calculating pressure output value is public Formula, further according to formula first-order linear formula by carrying out second-order linearity matching to zero point a of each temperature spot and sensitivity b, calculates Second-order fit formula a (T) of each temperature spot and b (T), obtain different temperature points according to described second-order fit formula a (T) and b (T) Corresponding zero point a of TTWith sensitivity bT；
2) in temperature range [T1, T2] in, set the known matching temperature spot T choosing, by judging the plan that this temperature spot T is located Close temperature range [T3, T4], T1、T2、T3、T4It is temperature value, and T1＜ T3≤T≤T4＜ T2, by linear difference formulaCalculate pressure output value U of this temperature spot TT, wherein U3、U4It is respectively temperature spot T3、T4 Under pressure output value；
3) pressure output value U after compensation is calculated according to formula (2)T', in formula (2), a0It is the zero-bit of the sensor under normal temperature, b0 It is the sensitivity of the sensor under normal temperature
U T &prime; = a 0 + U T - a T b T &times; b 0 - - - ( 2 ) .
2. the compensation method of silicon piezoresistance type pressure sensor temperature drift according to claim 1 is it is characterised in that described Step 1) in first-order linear formula such as formula (1), a in formula (1)T、bTIt is respectively the zero-bit of the sensor at a certain temperature T DEG C With sensitivity, P is the measured pressure value of sensor；UTFor cell pressure output valve
UT=aT+bT×P (1).
3. the compensation method of silicon piezoresistance type pressure sensor temperature drift according to claim 2 is it is characterised in that described Step 1) in second-order fit formula a (T) and b (T) be respectively：
A (T)=a0+α(T-T0)*Y(FS)
B (T)=b0+β(T-T0)*Y(FS) (3)
Wherein, α is zero-bit temperature coefficient；β is sensitivity temperature coefficient, and Y (FS) is Full-span output value.
CN201610353836.9A 2016-05-25 2016-05-25 Silicon piezoresistive pressure sensor temperature drift compensation method Pending CN106441644A (en)

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109323792A (en) * 2018-11-15 2019-02-12 航宇救生装备有限公司 A kind of intelligent temperature-compensation method based on ejector seat program controller pressure sensor
CN109425461A (en) * 2017-09-05 2019-03-05 上海融德机电工程设备有限公司 Intelligent pressure transmitter and its temperature-compensation method
CN109668674A (en) * 2019-02-26 2019-04-23 厦门乃尔电子有限公司 A kind of high-precision temperature compensation circuit and method of silicon piezoresistance type pressure sensor
CN110553786A (en) * 2019-10-11 2019-12-10 北京七星华创流量计有限公司 Pressure sensor compensation method and system
CN111487006A (en) * 2020-04-16 2020-08-04 南京高华科技股份有限公司 Micro differential pressure sensor based on stress isolation structure
CN111946422A (en) * 2019-05-16 2020-11-17 丰田自动车株式会社 Abnormality diagnosis device for in-vehicle internal combustion engine
CN113720524A (en) * 2021-08-26 2021-11-30 北京七星华创流量计有限公司 Pressure detection method and pressure detection system
CN114935428A (en) * 2022-05-09 2022-08-23 大连奥托股份有限公司 Compensation method for drift of force transducer of laminating equipment
CN115014629A (en) * 2022-06-15 2022-09-06 广东乐心医疗电子股份有限公司 Temperature drift compensation method and device for pressure sensor
CN116124360A (en) * 2023-04-14 2023-05-16 新乡北方车辆仪表有限公司 Method for self-judging out-of-tolerance output of piezoresistive pressure sensor

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109425461A (en) * 2017-09-05 2019-03-05 上海融德机电工程设备有限公司 Intelligent pressure transmitter and its temperature-compensation method
CN109323792A (en) * 2018-11-15 2019-02-12 航宇救生装备有限公司 A kind of intelligent temperature-compensation method based on ejector seat program controller pressure sensor
CN109668674A (en) * 2019-02-26 2019-04-23 厦门乃尔电子有限公司 A kind of high-precision temperature compensation circuit and method of silicon piezoresistance type pressure sensor
CN109668674B (en) * 2019-02-26 2023-10-03 厦门乃尔电子有限公司 High-precision temperature compensation circuit and method for silicon piezoresistive pressure sensor
CN111946422A (en) * 2019-05-16 2020-11-17 丰田自动车株式会社 Abnormality diagnosis device for in-vehicle internal combustion engine
CN110553786B (en) * 2019-10-11 2021-09-24 北京七星华创流量计有限公司 Pressure sensor compensation method and system
CN110553786A (en) * 2019-10-11 2019-12-10 北京七星华创流量计有限公司 Pressure sensor compensation method and system
CN111487006A (en) * 2020-04-16 2020-08-04 南京高华科技股份有限公司 Micro differential pressure sensor based on stress isolation structure
CN113720524A (en) * 2021-08-26 2021-11-30 北京七星华创流量计有限公司 Pressure detection method and pressure detection system
CN114935428A (en) * 2022-05-09 2022-08-23 大连奥托股份有限公司 Compensation method for drift of force transducer of laminating equipment
CN114935428B (en) * 2022-05-09 2023-11-03 大连奥托股份有限公司 Compensation method for drift of force transducer of pressing equipment
CN115014629A (en) * 2022-06-15 2022-09-06 广东乐心医疗电子股份有限公司 Temperature drift compensation method and device for pressure sensor
CN116124360A (en) * 2023-04-14 2023-05-16 新乡北方车辆仪表有限公司 Method for self-judging out-of-tolerance output of piezoresistive pressure sensor
CN116124360B (en) * 2023-04-14 2023-07-25 新乡北方车辆仪表有限公司 Method for self-judging out-of-tolerance output of piezoresistive pressure sensor

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