CN106431498A - Graphite/silicon carbide compact composite material preparation method - Google Patents
Graphite/silicon carbide compact composite material preparation method Download PDFInfo
- Publication number
- CN106431498A CN106431498A CN201610803513.5A CN201610803513A CN106431498A CN 106431498 A CN106431498 A CN 106431498A CN 201610803513 A CN201610803513 A CN 201610803513A CN 106431498 A CN106431498 A CN 106431498A
- Authority
- CN
- China
- Prior art keywords
- silicon
- graphite
- layer
- carbide particle
- passed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5057—Carbides
- C04B41/5059—Silicon carbide
Abstract
The invention discloses a graphite/silicon carbide compact composite material preparation method, comprising the steps of before the sediments of the silicon carbide on the surface of a graphite article, applying a layer of silicon carbide particles on the graphite article as a transition layer, then applying CVD sediments for the coated silicon carbide layer. The method works through applying a layer of silicon carbide particles on the graphite article as the transition layer, and then applying CVD sediments for the coated silicon carbide layer, since the silicon carbide particles transition layer has small holes, the sediments of the silicon carbide on the surface of the transition layer penetrates into the holes, enabling a more compact combination of the coated layer and the base body; at the same while, the method works at short cycles, at low electricity consumption, to effectively solve the question mark of the pureness measure of the graphite article and the binding force of the coated layer, and to prevent from introducing impurities to the section of follow-up work.
Description
Technical field
The present invention relates to technical field of inorganic non-metal material preparation is and in particular to one kind prepares the densification of graphite/carbon SiClx
The method of composite.
Background technology
In graphite piece surface depositing silicon silicon, generally adopt methyl trichlorosilane to be presoma, chemical vapor deposition occurs
Coat of silicon carbide, by-product HCl gas is obtained after reaction.It is desirable to coat of silicon carbide combines densification in some specific applications, can
Enter response system with the partial impurities stoping graphite piece；In addition, also requiring coat of silicon carbide to be tightly combined, anti-wear performance is good.
For example, the fluidized-bed reactor of preparation grain silicon generally has and uses graphite liner, and in graphite liner surface-coated coat of silicon carbide.
Purification of graphite generally adopts high temperature remove impurity operation, and including the longer gentle temperature-fall period of liter, not only the cycle is long, and power consumption is also high.And
Graphite surface after purification is smooth, relatively poor with the silicon carbide layer adhesion of subsequent deposition.
Content of the invention
Goal of the invention：It is an object of the invention to the low graphite/carbon SiClx of a kind of new cycle is short of proposition, power consumption is fine and close multiple
The method of condensation material, solves the problems, such as purity and the coating binding force of graphite piece, prevents from introducing impurity to follow-up workshop section.
Technical scheme：For realizing above-mentioned technical purpose, the present invention proposes one kind and prepares graphite/carbon SiClx densification composite wood
The method of material, by, before the depositing silicon silicon of graphite piece surface, first making in one layer of silicon-carbide particle layer of graphite piece external coating
For transition zone, then CVD deposition coat of silicon carbide is realized.
Preferably, the coating layer thickness of described silicon-carbide particle layer is 30-80 μm, the carbonization in described silicon-carbide particle layer
Particle size range 1-20 μm of silicon grain.
In one embodiment, described silicon-carbide particle layer is by comprising silicon-carbide particle in graphite piece external coating
Slurry then be dried to obtain, described slurry comprises silicon-carbide particle, graphite glue, diluent, described silicon-carbide particle: graphite
Glue: mass ratio=3～5 of diluent: 3～5: 1 it is preferable that described silicon-carbide particle: graphite glue: the mass ratio of diluent
=3: 3: 1.It is highly preferred that described graphite glue is phenolic resin and graphite powder mixture, wherein, graphite powder accounts for graphite colloids quality
The 3%-25% of content is it is preferable that graphite powder accounts for the 10% of graphite colloids mass content.The ash of described graphite powder 2ppm with
Under, particle size range be 1-20 μm, described diluent be high-purity ethanol or anhydrous alcohol.
Wherein, described drying condition is 2h more than to be dried at 90 DEG C -200 DEG C.
Preferably, described graphite piece was first cleaned by ultrasonic before one layer of silicon-carbide particle layer of brushing.
Wherein, described CVD deposition coat of silicon carbide comprises the steps：
(1) graphite piece being coated with silicon-carbide particle layer sends into CVD reactor as base material, is passed through nitrogen to vacuum
130-180mbar, furnace tube is warming up to 500-800 DEG C, starts to be passed through hydrogen, in holding furnace, vacuum reaches 0.9-1.2bar, holds
Continue and be warming up to 1200-1600 DEG C；
(2) maintain temperature at 1200-1600 DEG C, start to be passed through unstripped gas MTCS (methyl trichlorosilane), hydrogen and argon,
Deposit 4-10 hour at this temperature；
(3) stop after the completion of reacting being passed through unstripped gas MTCS and argon, and start to lower the temperature, in vacuum to 130-
Stop after 180mbar being passed through hydrogen；
(4) after temperature is down to 200 DEG C, stop being passed through nitrogen, start to be evacuated to 0.1-1mbar, then inflated with nitrogen is extremely
1bar；
(5) after base material cools down completely, take out base material.
Beneficial effect：The present invention is by being used as transition zone in one layer of silicon-carbide particle of graphite piece external coating, then CVD deposition
Coat of silicon carbide, because silicon-carbide particle transition zone has little hole, on its surface, the carborundum of deposition penetrates into hole,
Coating is combined more tight with matrix；Meanwhile, method of the present invention cycle is short, power consumption are low, effectively solving graphite piece pure
Degree and coating binding force problem, prevent from introducing impurity to follow-up workshop section.
Brief description
The graphite/carbon SiClx densified composite scanning electron microscope schematic diagram of Fig. 1 present invention preparation.
Specific embodiment
The invention provides a kind of method preparing graphite/carbon SiClx densified composite, by sinking on graphite piece surface
Before carbon distribution SiClx, first in one layer of silicon-carbide particle layer of graphite piece external coating as transition zone, then CVD deposition coat of silicon carbide
Realize.
Describe the present invention below by specific embodiment in detail.
Used in following embodiments, graphite glue is phenolic resin and graphite powder mixture, and wherein, graphite powder accounts for graphite glue
The 10% of weight content, the ash of graphite powder is 1-20 μm in below 2ppm, particle size range.
Embodiment 1
A kind of preparation method of graphite/carbon SiClx densified composite, comprises the steps：
(1), after ultrasonic clean graphite piece, the slurry being made up of certain silicon-carbide particle, silicon-carbide particle dynamics scope are brushed
1-20 μm, slurry is mixed according to mass ratio 3: 3: 1 and uniformly brushed in graphite by silicon-carbide particle, graphite glue, diluent
The surface of part, is then transferred in drying baker at least 90 DEG C and 2h more than is dried, and forms the carborundum of densification on graphite piece surface
Granulosa.60 μm of coating layer thickness, obtaining surface-coated has the graphite piece of silicon-carbide particle layer, then sends into CVD as base material
Reactor depositing silicon silicon coating.
(2) CVD deposition stage process condition：
1) fall flange in the bottom, open furnace tube, put into base material；
2) lift flange, close furnace tube；
3) evacuation displacement, vacuum 0.5mbar；
4) vaporizer heating, feeding line preheats, starts to be passed through nitrogen to vacuum 150mbar；
5) furnace tube is warming up to 600 DEG C, starts to be passed through hydrogen, in holding furnace, vacuum reaches 1.0bar, persistently overheating extremely
1500℃；
6) after maintaining 1500 DEG C of a period of times, start to be passed through unstripped gas (MTCS, hydrogen, argon), deposit 6 at this temperature
Hour；
7) stop after the completion of reacting being passed through unstripped gas (MTCS, argon), and start to lower the temperature (about 3 DEG C/min of rate of temperature fall),
Stop being passed through hydrogen after vacuum is down to 150mbar, maintain this state for a period of time；
8) after temperature is down to 200 DEG C, stop being passed through nitrogen, start to be evacuated to 0.5mbar, then inflated with nitrogen is to 1bar.
9) after base material cools down completely, take out base material and carry out packing and selling.
Embodiment 2
A kind of preparation method of graphite/carbon SiClx densified composite, comprises the steps：
(1), after ultrasonic clean graphite piece, the slurry being made up of certain silicon-carbide particle, silicon-carbide particle dynamics scope are brushed
1-20 μm, slurry is mixed according to mass ratio 3: 4: 1 and uniformly brushed in graphite by silicon-carbide particle, graphite glue, diluent
The surface of part, is then transferred in drying baker at least 90 DEG C and 2h more than is dried, and forms the carborundum of densification on graphite piece surface
Granulosa.80 μm of coating layer thickness, obtaining surface-coated has the graphite piece of silicon-carbide particle layer, then sends into CVD as base material
Reactor depositing silicon silicon coating.
(2) CVD deposition stage process condition：
1) fall flange in the bottom, open furnace tube, put into base material；
2) lift flange, close furnace tube；
3) evacuation displacement, vacuum 1.0mbar；
4) vaporizer heating, feeding line preheats, starts to be passed through nitrogen to vacuum 180mbar；
5) furnace tube is warming up to 500 DEG C, starts to be passed through hydrogen, in holding furnace, vacuum reaches 1.2bar, persistently overheating extremely
1600℃；
6) after maintaining 1600 DEG C of a period of times, start to be passed through unstripped gas (MTCS, hydrogen, argon), deposit 4 at this temperature
Hour；
7) stop after the completion of reacting being passed through unstripped gas (MTCS, argon), and start to lower the temperature (about 2 DEG C/min of rate of temperature fall),
Stop being passed through hydrogen after vacuum is down to 130mbar, maintain this state for a period of time；
8) after temperature is down to 200 DEG C, stop being passed through nitrogen, start to be evacuated to 0.1mbar, then inflated with nitrogen is to 1bar.
9) after base material cools down completely, take out base material and carry out packing and selling.
Embodiment 3
A kind of preparation method of graphite/carbon SiClx densified composite, comprises the steps：
(1), after ultrasonic clean graphite piece, the slurry being made up of certain silicon-carbide particle, silicon-carbide particle dynamics scope are brushed
1-20 μm, slurry is mixed according to mass ratio 4: 3: 1 and uniformly brushed in graphite by silicon-carbide particle, graphite glue, diluent
The surface of part, is then transferred in drying baker at least 90 DEG C and 2h more than is dried, and forms the carborundum of densification on graphite piece surface
Granulosa.30 μm of coating layer thickness, obtaining surface-coated has the graphite piece of silicon-carbide particle layer, then sends into CVD as base material
Reactor depositing silicon silicon coating.
(2) CVD deposition stage process condition：
1) fall flange in the bottom, open furnace tube, put into base material；
2) lift flange, close furnace tube；
3) evacuation displacement, vacuum 1.0mbar；
4) vaporizer heating, feeding line preheats, starts to be passed through nitrogen to vacuum 130mbar；
5) furnace tube is warming up to 800 DEG C, starts to be passed through hydrogen, in holding furnace, vacuum reaches 1.1bar, persistently overheating extremely
1200℃；
6), after maintaining 1200 DEG C of a period of times, start to be passed through unstripped gas (MTCS, hydrogen, argon), deposit at this temperature
10 hours；
7) stop after the completion of reacting being passed through unstripped gas (MTCS, argon), and start to lower the temperature (about 1 DEG C/min of rate of temperature fall),
Stop being passed through hydrogen after vacuum is down to 180mbar, maintain this state for a period of time；
8) after temperature is down to 200 DEG C, stop being passed through nitrogen, start to be evacuated to 0.1mbar, then inflated with nitrogen is to 1bar.
9) after base material cools down completely, take out base material and carry out packing and selling.
Embodiment 4
A kind of preparation method of graphite/carbon SiClx densified composite, comprises the steps：
(1), after ultrasonic clean graphite piece, the slurry being made up of certain silicon-carbide particle, silicon-carbide particle dynamics scope are brushed
1-20 μm, slurry is mixed according to mass ratio 4: 4: 1 and uniformly brushed in graphite by silicon-carbide particle, graphite glue, diluent
The surface of part, is then transferred in drying baker at least 90 DEG C and 2h more than is dried, and forms the carborundum of densification on graphite piece surface
Granulosa.50 μm of coating layer thickness, obtaining surface-coated has the graphite piece of silicon-carbide particle layer, then sends into CVD as base material
Reactor depositing silicon silicon coating.
(2) CVD deposition stage process condition：
1) fall flange in the bottom, open furnace tube, put into base material；
2) lift flange, close furnace tube；
3) evacuation displacement, vacuum 0.5mbar；
4) vaporizer heating, feeding line preheats, starts to be passed through nitrogen to vacuum 160mbar；
5) furnace tube is warming up to 700 DEG C, starts to be passed through hydrogen, in holding furnace, vacuum reaches 1.0bar, persistently overheating extremely
1400℃；
6) after maintaining 1400 DEG C of a period of times, start to be passed through unstripped gas (MTCS, hydrogen, argon), deposit 5 at this temperature
Hour；
7) stop after the completion of reacting being passed through unstripped gas (MTCS, argon), and start to lower the temperature (about 3 DEG C/min of rate of temperature fall),
Stop being passed through hydrogen after vacuum is down to 150mbar, maintain this state for a period of time；
8) after temperature is down to 200 DEG C, stop being passed through nitrogen, start to be evacuated to 0.8mbar, then inflated with nitrogen is to 1bar.
9) after base material cools down completely, take out base material and carry out packing and selling.
Fig. 1 shows the graphite/carbon SiClx densified composite scanning electron microscope spectrogram of the method preparation using embodiment 1,
It can be seen that there is the silicon-carbide particle transition zone of brushing on graphite matrix, on its surface, the carborundum of deposition penetrates into carbon
The hole of silicon carbide particle transition zone presence simultaneously coats silicon-carbide particle so that coating is combined more tight, final preparation with matrix
Go out the coating structure of densification.Additionally, the method for brushing transition zone is more simple, efficiently so that coating process cycle is short, power consumption
Low, the purity of effectively solving graphite piece and coating binding force problem, prevent from introducing impurity to follow-up workshop section.
Claims (6)
1. a kind of method preparing graphite/carbon SiClx densified composite is it is characterised in that in graphite piece surface depositing silicon silicon
Before, first in one layer of silicon-carbide particle layer of graphite piece external coating as transition zone, then CVD deposition coat of silicon carbide.
2. method according to claim 1 is it is characterised in that the coating layer thickness of described silicon-carbide particle layer is 30-80 μ
M, particle size range 1-20 μm of the silicon-carbide particle in described silicon-carbide particle layer.
3. method according to claim 1 is it is characterised in that described silicon-carbide particle layer passes through to apply on graphite piece surface
Brush the slurry comprising silicon-carbide particle and then be dried to obtain, described slurry comprises silicon-carbide particle, graphite glue, diluent, institute
State silicon-carbide particle: graphite glue: mass ratio=3～5 of diluent: 3～5: 1.
4. method according to claim 3 is it is characterised in that described drying condition is 2h to be dried at 90 DEG C -200 DEG C
More than.
5. method according to claim 1 it is characterised in that described graphite piece one layer of silicon-carbide particle layer of brushing it
Front first it is cleaned by ultrasonic.
6. method according to claim 1 is it is characterised in that described CVD deposition coat of silicon carbide comprises the steps：
(1) graphite piece being coated with silicon-carbide particle layer sends into CVD reactor as base material, is passed through nitrogen to vacuum 130-
180mbar, furnace tube is warming up to 500-800 DEG C, starts to be passed through hydrogen, and in holding furnace, vacuum reaches 0.9-1.2bar, persistently rises
Temperature is to 1200-1600 DEG C；
(2) maintain temperature at 1200-1600 DEG C, start to be passed through unstripped gas MTCS (methyl trichlorosilane), hydrogen and argon, here
At a temperature of deposit 4-10 hour；
(3) stop after the completion of reacting being passed through unstripped gas MTCS and argon, and start to lower the temperature, after vacuum to 130-180mbar
Stop being passed through hydrogen；
(4) after temperature is down to 200 DEG C, stop being passed through nitrogen, start to be evacuated to 0.1-1mbar, then inflated with nitrogen is to 1bar；
(5) after base material cools down completely, take out base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610803513.5A CN106431498B (en) | 2016-09-05 | 2016-09-05 | A method of preparing graphite/carbon SiClx densified composite |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610803513.5A CN106431498B (en) | 2016-09-05 | 2016-09-05 | A method of preparing graphite/carbon SiClx densified composite |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106431498A true CN106431498A (en) | 2017-02-22 |
| CN106431498B CN106431498B (en) | 2019-05-28 |
Family
ID=58164007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610803513.5A Active CN106431498B (en) | 2016-09-05 | 2016-09-05 | A method of preparing graphite/carbon SiClx densified composite |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106431498B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109534837A (en) * | 2019-01-09 | 2019-03-29 | 山东中鹏特种陶瓷有限公司 | Silicon carbide coated graphite saggar and manufacturing process |
| CN111410560A (en) * | 2020-04-02 | 2020-07-14 | 江苏嘉明碳素新材料有限公司 | Preparation method of silicified graphite with high-density SiC coating |
| CN111411344A (en) * | 2020-03-30 | 2020-07-14 | 于伟华 | Method for preparing silicon carbide compact composite material |
| CN112624797A (en) * | 2020-12-15 | 2021-04-09 | 湖南德智新材料有限公司 | Graphite surface gradient silicon carbide coating and preparation method thereof |
| CN113151800A (en) * | 2021-04-25 | 2021-07-23 | 宜兴市海飞陵电子科技有限公司 | Silicon carbide coating, transition layer thereof and preparation method |
| CN114368982A (en) * | 2022-01-21 | 2022-04-19 | 巩义市泛锐熠辉复合材料有限公司 | Silicon carbide coating graphite base and preparation method thereof |
| CN115595659A (en) * | 2022-11-02 | 2023-01-13 | 深圳市志橙半导体材料有限公司（Cn） | Surface coating of graphite matrix, preparation method and application |
| CN116590708A (en) * | 2023-07-18 | 2023-08-15 | 湖南泰坦未来科技有限公司 | Graphite material with silicon carbide coating and preparation method and application thereof |
| CN117328036A (en) * | 2023-12-01 | 2024-01-02 | 成都超纯应用材料有限责任公司 | Graphite silicon carbide composite material and deposition process of graphite surface silicon carbide |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000302576A (en) * | 1999-04-22 | 2000-10-31 | Tokai Carbon Co Ltd | Graphite material coated with silicon carbide |
| CN103044077A (en) * | 2013-01-10 | 2013-04-17 | 湖南南方搏云新材料有限责任公司 | Carbon/carbon crucible side oxidation resistant coating and preparation method thereof |
| CN103483004A (en) * | 2012-06-12 | 2014-01-01 | 上海珩锢新材料科技有限公司 | Silicon carbide coating solution used on graphite surface and spraying technology thereof |
| CN102964145B (en) * | 2012-12-04 | 2014-04-02 | 西北工业大学 | Method for preparing coating reinforced C/SiC composite material |
| CN103880477A (en) * | 2014-02-26 | 2014-06-25 | 青岛持久高新材料有限公司 | Graphite product SiC coating method |
| CN104829258A (en) * | 2015-05-29 | 2015-08-12 | 西安鑫垚陶瓷复合材料有限公司 | Fractured graphite die repairing method |
| CN105481477A (en) * | 2015-12-29 | 2016-04-13 | 湖南博望碳陶有限公司 | Preparation method of graphite/SiC composite material |
| CN105541415A (en) * | 2015-12-15 | 2016-05-04 | 西安鑫垚陶瓷复合材料有限公司 | Ceramic-based composite material densification preparation method |
-
2016
- 2016-09-05 CN CN201610803513.5A patent/CN106431498B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000302576A (en) * | 1999-04-22 | 2000-10-31 | Tokai Carbon Co Ltd | Graphite material coated with silicon carbide |
| CN103483004A (en) * | 2012-06-12 | 2014-01-01 | 上海珩锢新材料科技有限公司 | Silicon carbide coating solution used on graphite surface and spraying technology thereof |
| CN102964145B (en) * | 2012-12-04 | 2014-04-02 | 西北工业大学 | Method for preparing coating reinforced C/SiC composite material |
| CN103044077A (en) * | 2013-01-10 | 2013-04-17 | 湖南南方搏云新材料有限责任公司 | Carbon/carbon crucible side oxidation resistant coating and preparation method thereof |
| CN103880477A (en) * | 2014-02-26 | 2014-06-25 | 青岛持久高新材料有限公司 | Graphite product SiC coating method |
| CN104829258A (en) * | 2015-05-29 | 2015-08-12 | 西安鑫垚陶瓷复合材料有限公司 | Fractured graphite die repairing method |
| CN105541415A (en) * | 2015-12-15 | 2016-05-04 | 西安鑫垚陶瓷复合材料有限公司 | Ceramic-based composite material densification preparation method |
| CN105481477A (en) * | 2015-12-29 | 2016-04-13 | 湖南博望碳陶有限公司 | Preparation method of graphite/SiC composite material |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109534837A (en) * | 2019-01-09 | 2019-03-29 | 山东中鹏特种陶瓷有限公司 | Silicon carbide coated graphite saggar and manufacturing process |
| CN111411344A (en) * | 2020-03-30 | 2020-07-14 | 于伟华 | Method for preparing silicon carbide compact composite material |
| CN111410560A (en) * | 2020-04-02 | 2020-07-14 | 江苏嘉明碳素新材料有限公司 | Preparation method of silicified graphite with high-density SiC coating |
| CN112624797A (en) * | 2020-12-15 | 2021-04-09 | 湖南德智新材料有限公司 | Graphite surface gradient silicon carbide coating and preparation method thereof |
| CN113151800A (en) * | 2021-04-25 | 2021-07-23 | 宜兴市海飞陵电子科技有限公司 | Silicon carbide coating, transition layer thereof and preparation method |
| CN114368982A (en) * | 2022-01-21 | 2022-04-19 | 巩义市泛锐熠辉复合材料有限公司 | Silicon carbide coating graphite base and preparation method thereof |
| CN115595659A (en) * | 2022-11-02 | 2023-01-13 | 深圳市志橙半导体材料有限公司（Cn） | Surface coating of graphite matrix, preparation method and application |
| CN116590708A (en) * | 2023-07-18 | 2023-08-15 | 湖南泰坦未来科技有限公司 | Graphite material with silicon carbide coating and preparation method and application thereof |
| CN116590708B (en) * | 2023-07-18 | 2023-10-31 | 湖南泰坦未来科技有限公司 | Graphite material with silicon carbide coating and preparation method and application thereof |
| CN117328036A (en) * | 2023-12-01 | 2024-01-02 | 成都超纯应用材料有限责任公司 | Graphite silicon carbide composite material and deposition process of graphite surface silicon carbide |
| CN117328036B (en) * | 2023-12-01 | 2024-04-05 | 成都超纯应用材料有限责任公司 | Graphite silicon carbide composite material and deposition process of graphite surface silicon carbide |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106431498B (en) | 2019-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106431498A (en) | Graphite/silicon carbide compact composite material preparation method | |
| US9085493B2 (en) | Process for production of silicon-carbide-coated carbon base material, silicon-carbide-coated carbon base material, sintered (silicon carbide)-carbon complex, ceramic-coated sintered (silicon carbide)-carbon complex, and process for production of sintered (silicon carbide)-carbon complex | |
| CN105506579B (en) | A kind of preparation method of graphene coated silicon carbide nanometer line | |
| CN102277560B (en) | Method for improving oxidation resistance of graphite electrode by obtaining SiC/C gradient surface coating through chemical vapor deposition | |
| CN102126859B (en) | Method for preparing bamboo-shaped SiC nanowire-toughened HfC ceramic | |
| CN100537485C (en) | Method for preparing silicon carbide nano-wire | |
| CN106699228A (en) | Low-cost tantalum carbide coating preparation method | |
| CN105543803B (en) | A kind of the diamond/carbon boron composite coating and preparation method of cemented carbide substrate | |
| TW201144483A (en) | Cylinder surface treatment for monochlorosilane | |
| CN112501584A (en) | Composite coating based on graphite substrate and preparation method thereof | |
| CN111848202B (en) | Carbon/carbon guide cylinder with silicon carbide/silicon coating and preparation method thereof | |
| CN105350294B (en) | A kind of chopped carbon fiber of applying silicon carbide layer and preparation method thereof | |
| CN110158050B (en) | System and method for preparing TiN, TiC and TiCN coatings by fluidized bed | |
| JP7293647B2 (en) | Manufacturing method of tantalum carbide material | |
| CN110256093A (en) | A kind of reduction infiltration process preparation SiCfThe method of remaining silicone content in/SiC ceramic matrix composite material | |
| CN105483645B (en) | A kind of method for preparing Bamboo-shaped SiC nanowire | |
| JPH01131063A (en) | Production of silicon nitride molded product | |
| CN108505018B (en) | A method of growth excellent diamonds particle and diamond thin | |
| CN107955929B (en) | Surface boronizing modification method for high-cobalt hard alloy die | |
| CN111892056B (en) | carbon/Tao Fanying ware inner liner with silicon carbide/silicon coating and preparation method thereof | |
| CN115948721A (en) | Method for preparing tantalum carbide coating by CVD (chemical vapor deposition) method | |
| CN110418858A (en) | Coated product and production method | |
| CN111620340B (en) | Method for in-situ growth of TiC nanotube | |
| CN105601341A (en) | Method for preparing brake disc with beta-silicon carbide coating | |
| CN107904658A (en) | A kind of reduction furnace inner wall preparation method of composite coating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |