CN106409973B - A kind of method that bipolar mixture corrosion prepares polycrystalline silicon suede - Google Patents
A kind of method that bipolar mixture corrosion prepares polycrystalline silicon suede Download PDFInfo
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- CN106409973B CN106409973B CN201610946908.0A CN201610946908A CN106409973B CN 106409973 B CN106409973 B CN 106409973B CN 201610946908 A CN201610946908 A CN 201610946908A CN 106409973 B CN106409973 B CN 106409973B
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- polysilicon chip
- polycrystalline silicon
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 68
- 238000005260 corrosion Methods 0.000 title claims abstract description 20
- 230000007797 corrosion Effects 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000000203 mixture Substances 0.000 title abstract description 4
- 229920005591 polysilicon Polymers 0.000 claims abstract description 50
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000007791 liquid phase Substances 0.000 claims abstract description 16
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 13
- 230000003647 oxidation Effects 0.000 claims abstract description 12
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- 239000004411 aluminium Substances 0.000 claims abstract description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 21
- 239000002912 waste gas Substances 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 17
- 238000002360 preparation method Methods 0.000 claims description 13
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 12
- 239000000460 chlorine Substances 0.000 claims description 12
- 229910052801 chlorine Inorganic materials 0.000 claims description 12
- 238000004381 surface treatment Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 239000012071 phase Substances 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 208000028659 discharge Diseases 0.000 claims description 6
- 239000012065 filter cake Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 5
- 239000008236 heating water Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000007789 gas Substances 0.000 abstract description 7
- 238000002310 reflectometry Methods 0.000 abstract description 5
- 239000011148 porous material Substances 0.000 abstract description 2
- 230000009466 transformation Effects 0.000 abstract description 2
- 238000005406 washing Methods 0.000 abstract description 2
- 230000031700 light absorption Effects 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 10
- 238000003912 environmental pollution Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of method that bipolar mixture corrosion prepares polycrystalline silicon suede, belong to polycrystalline silicon suede preparing technical field.The present invention is by after polysilicon chip surface washing, with hydrogen peroxide, liquor potassic permanganate and hydrochloric acid combined oxidation corrosion polysilicon surface, after forming it into micro-pore, it is prepared into liquid phase processing polysilicon chip, it is subsequently placed in electrolytic aluminium factory exhaust gas, in uniform gaseous environment, the plasma formed by electrion, more silicon wafer surfaces after liquid phase processing are performed etching, since gaseous environment is homogeneous and stablizes, it is prepared into a kind of uniform and stable more silicon wafer mattes, rough hole shape configuration of surface is presented by surface, and then visible ray is set to form multiple reflection in polysilicon surface, reduce surface reflectivity, increase the absorption of light, improve the transformation efficiency of light, have broad application prospects.
Description
Technical field
The present invention relates to a kind of method that bipolar mixture corrosion prepares polycrystalline silicon suede, belong to polycrystalline silicon suede technology of preparing
Field.
Background technology
21 century, two maximum challenges of facing mankind are energy shortage and environmental pollution.Since fossil energy uses meeting
A series of problems, such as environmental pollution, global warming and climate change of generation, so the environmental-friendly energy of exploitation newly is
One extremely urgent significant task.It is well known that solar energy is inexhaustible, the inexhaustible energy truly,
And the series of advantages such as any environmental pollution are not produced during use, therefore it becomes and solves the energy and environmental problem
The most preferable energy.Crystal-silicon solar cell (including monocrystalline silicon battery and polycrystal silicon cell) is due to its ripe production technology and excellent
Good opto-electronic conversion performance, firmly in occupation of the leading position of international photovoltaic market, it is total that its yield accounts for solar cell always
More than the 80% of yield.Although wherein polycrystalline silicon solar cell efficiency is lower than single crystal silicon solar cell efficiency, due to polysilicon
Solar cell is lower than single crystal silicon solar cell price, can be made into square piece, beneficial to module arrangement the advantages that, in photovoltaic market in recent years
In shared proportion already exceed 50%, and its market share constantly rises in recent years, becomes most important solar energy
Battery material.
Currently in order to the loss for being injected into polycrystal silicon cell surface light is reduced, frequently with antireflective coatings such as evaporation SiN, but its
Production equipment is expensive, and cost is higher.So light trapping structure is prepared in silicon chip surface by surface-texturing, it is industrial to be known as
" making herbs into wool " refers to after certain surface is handled, and rough hole shape configuration of surface is presented in solar battery surface, can reduce
The light loss on polycrystalline silicon solar cell surface, improves the electricity conversion of solar cell.It is existing to be corroded by chemical corrosion method
Modified polysilicon chip surface texture prepares polycrystalline silicon suede, and cost is relatively low and technique is simple, but to polysilicon chip chemistry sour
During erosion, since liquid phase chemical corrosion process is exothermic process, corrosion temperature is difficult to control, and causes obtained matte uniformity
Bad, the stability and controllability of matte quality are relatively low, so it is necessary to prepare a kind of uniform and stable type polycrystalline silicon suede.
The content of the invention
The technical problems to be solved by the invention：When preparing polycrystalline silicon suede for current chemical attack, due to liquid phase
It is exothermic process to learn corrosion process, and corrosion temperature is difficult to control, and causes obtained matte uniformity bad, the stabilization of matte quality
Property and controllability it is relatively low the problem of, there is provided one kind aoxidized by aqueous etching, gaseous plasma etching prepares polycrystalline silicon suede
Method, the present invention corrodes polycrystalline by after polysilicon chip surface washing, with hydrogen peroxide, liquor potassic permanganate and hydrochloric acid combined oxidation
Silicon face, after forming it into micro-pore, is prepared into liquid phase processing polysilicon chip, is subsequently placed in electrolytic aluminium factory exhaust gas,
In uniform gaseous environment, by the plasma of electrion formation, more silicon wafer surfaces after liquid phase processing are performed etching,
Since gaseous environment is homogeneous and stablizes, a kind of uniform and stable more silicon wafer mattes are prepared into, are presented by surface rough
Hole shape configuration of surface, and then visible ray is formed multiple reflection in polysilicon surface, surface reflectivity is reduced, increases light
Absorb, improve the transformation efficiency of light, have broad application prospects.
In order to solve the above technical problems, the present invention is using technical solution as described below：
(1) polysilicon chip is chosen, after it is cleaned 3~5 times respectively with absolute ethyl alcohol and deionized water, in 200~300W
Lower ultrasonic disperse handles 10~15min, then takes out the polysilicon chip after ultrasonic cleaning and is placed at 45~50 DEG C at dry
25~30min is managed, is prepared into pretreatment polysilicon chip, it is spare；
(2) count in parts by weight, weigh 25~30 parts of 10% hydrogen peroxide solutions of mass fraction, 10~15 parts of quality point respectively
Several 5% hydrochloric acid solutions and 1~2 part of 10% liquor potassic permanganate of mass fraction are placed in beaker, are stirred and are prepared into Oxygen in Liquid
Change liquid；
(3) in mass ratio 1:2:20, by Ozone Water, step (1) spare pretreatment polysilicon chip and the liquid of above-mentioned preparation
Phase oxidation liquid is stirred and is added in autoclave, anti-to high pressure at 45~50 DEG C after 10~15min of heating water bath
Answer and chlorine is passed through in kettle and under chlorine atmosphere, 20~24h of insulation reaction, then stops heating and standing being cooled to room temperature, mistake
Filter cake is collected in filter, after being washed with deionized to cleaning solution pH to neutrality, is prepared into aqueous etching polysilicon chip；
(4) collect electrolytic aluminium factory waste gas containing fluoride and be heated to 65~70 DEG C, be prepared into heat treatment waste gas containing fluoride, then with true
Heat treatment waste gas containing fluoride is passed through in Surface Treatment with Plasma device by sky pump, in the case where being heat-treated waste gas containing fluoride atmosphere, by the upper of preparation
State aqueous etching polysilicon chip and be placed in 10~15min of discharge treatment under 10~15kV Surface Treatment with Plasma devices, be then turned off true
Sky pumps and is passed through air, and standing is cooled to room temperature, you can is prepared into polycrystalline silicon suede prepared by a kind of two-phase corrosion.
Polycrystalline silicon suede etch pit size prepared by the present invention is 2.3~2.8 μm, and corrosion pit depth is 1.8~2.6 μm,
Etch pit is evenly distributed, and depth is unified, and polysilicon chip reflectivity is 4.2~4.5%, compared with similar products, reflectivity drop
Low 15~20%.
Compared with other methods, advantageous effects are the present invention：
(1) etch pit is evenly distributed in polycrystalline silicon suede prepared by the present invention, and depth is unified, and reflectivity substantially reduces；
(2) present invention is prepared, environmentally protective, section by the compound corrosion of liquid and gas using electrolytic aluminium factory exhaust gas
About resource.
Embodiment
Polysilicon chip is chosen first, after it is cleaned 3~5 times respectively with absolute ethyl alcohol and deionized water, in 200~300W
Lower ultrasonic disperse handles 10~15min, then takes out the polysilicon chip after ultrasonic cleaning and is placed at 45~50 DEG C at dry
25~30min is managed, is prepared into pretreatment polysilicon chip, it is spare；Count in parts by weight, weigh 25~30 parts of mass fractions respectively
10% hydrogen peroxide solution, 10~15 parts of 5% hydrochloric acid solutions of mass fraction and 1~2 part of 10% liquor potassic permanganate of mass fraction are put
In beaker, it is stirred and is prepared into liquid phase oxidation liquid；In mass ratio 1:2:20, by the spare pretreatment of Ozone Water, step (1)
The liquid phase oxidation liquid of polysilicon chip and above-mentioned preparation is stirred and is added in autoclave, at 45~50 DEG C water-bath add
After 10~15min of heat, to being passed through chlorine in autoclave and under chlorine atmosphere, 20~24h of insulation reaction, then stops adding
Hot and standing is cooled to room temperature, and filter cake is collected by filtration, and after being washed with deionized to cleaning solution pH to neutrality, is prepared into liquid phase corruption
Lose polysilicon chip；Collect electrolytic aluminium factory waste gas containing fluoride and be heated to 65~70 DEG C, be prepared into heat treatment waste gas containing fluoride, then with true
Heat treatment waste gas containing fluoride is passed through in Surface Treatment with Plasma device by sky pump, in the case where being heat-treated waste gas containing fluoride atmosphere, by the upper of preparation
State aqueous etching polysilicon chip and be placed in 10~15min of discharge treatment under 10~15kV Surface Treatment with Plasma devices, be then turned off true
Sky pumps and is passed through air, and standing is cooled to room temperature, you can is prepared into polycrystalline silicon suede prepared by a kind of two-phase corrosion.
Example 1
Polysilicon chip is chosen first, after it is cleaned 3 times respectively with absolute ethyl alcohol and deionized water, the ultrasound point under 200W
Processing 10min is dissipated, then the polysilicon chip after ultrasonic cleaning is taken out and is placed in drying process 25min at 45 DEG C, is prepared into pre-
Polysilicon chip is handled, it is spare；Count in parts by weight, weigh 25 parts of 10% hydrogen peroxide solutions of mass fraction, 10 parts of quality point respectively
Several 5% hydrochloric acid solutions and 1 part of 10% liquor potassic permanganate of mass fraction are placed in beaker, are stirred and are prepared into liquid phase oxidation
Liquid；In mass ratio 1:2:20, the liquid phase oxidation liquid of Ozone Water, pretreatment polysilicon chip and above-mentioned preparation is stirred and added
Into autoclave, at 45 DEG C after heating water bath 10min, to being passed through chlorine in autoclave and under chlorine atmosphere,
Insulation reaction 20h, then stops heating and standing being cooled to room temperature, filter cake is collected by filtration, is washed with deionized to cleaning solution
PH is prepared into aqueous etching polysilicon chip to after neutrality；Collect electrolytic aluminium factory waste gas containing fluoride and be heated to 65 DEG C, be prepared into hot place
Waste gas containing fluoride is managed, is then passed through with vacuum pump by waste gas containing fluoride is heat-treated in Surface Treatment with Plasma device, it is fluorine-containing useless being heat-treated
Under gas atmosphere, the above-mentioned aqueous etching polysilicon chip of preparation is placed in discharge treatment 10min under 10kV Surface Treatment with Plasma devices,
It is then turned off vacuum pump and is passed through air, standing is cooled to room temperature, you can is prepared into polysilicon suede prepared by a kind of two-phase corrosion
Face.
Example 2
Polysilicon chip is chosen first, after it is cleaned 4 times respectively with absolute ethyl alcohol and deionized water, the ultrasound point under 250W
Processing 12min is dissipated, then the polysilicon chip after ultrasonic cleaning is taken out and is placed in drying process 27min at 47 DEG C, is prepared into pre-
Polysilicon chip is handled, it is spare；Count in parts by weight, weigh 27 parts of 10% hydrogen peroxide solutions of mass fraction, 12 parts of quality point respectively
Several 5% hydrochloric acid solutions and 2 parts of 10% liquor potassic permanganates of mass fraction are placed in beaker, are stirred and are prepared into liquid phase oxidation
Liquid；In mass ratio 1:2:20, the liquid phase oxidation liquid of Ozone Water, pretreatment polysilicon chip and above-mentioned preparation is stirred and added
Into autoclave, at 47 DEG C after heating water bath 12min, to being passed through chlorine in autoclave and under chlorine atmosphere,
Insulation reaction 22h, then stops heating and standing being cooled to room temperature, filter cake is collected by filtration, is washed with deionized to cleaning solution
PH is prepared into aqueous etching polysilicon chip to after neutrality；Collect electrolytic aluminium factory waste gas containing fluoride and be heated to 67 DEG C, be prepared into hot place
Waste gas containing fluoride is managed, is then passed through with vacuum pump by waste gas containing fluoride is heat-treated in Surface Treatment with Plasma device, it is fluorine-containing useless being heat-treated
Under gas atmosphere, the above-mentioned aqueous etching polysilicon chip of preparation is placed in discharge treatment 12min under 12kV Surface Treatment with Plasma devices,
It is then turned off vacuum pump and is passed through air, standing is cooled to room temperature, you can is prepared into polysilicon suede prepared by a kind of two-phase corrosion
Face.
Example 3
Polysilicon chip is chosen first, after it is cleaned 5 times respectively with absolute ethyl alcohol and deionized water, the ultrasound point under 300W
Processing 15min is dissipated, then the polysilicon chip after ultrasonic cleaning is taken out and is placed in drying process 30min at 50 DEG C, is prepared into pre-
Polysilicon chip is handled, it is spare；Count in parts by weight, weigh 30 parts of 10% hydrogen peroxide solutions of mass fraction, 15 parts of quality point respectively
Several 5% hydrochloric acid solutions and 2 parts of 10% liquor potassic permanganates of mass fraction are placed in beaker, are stirred and are prepared into liquid phase oxidation
Liquid；In mass ratio 1:2:20, the liquid phase oxidation liquid of Ozone Water, pretreatment polysilicon chip and above-mentioned preparation is stirred and added
Into autoclave, at 50 DEG C after heating water bath 15min, to being passed through chlorine in autoclave and under chlorine atmosphere,
Insulation reaction 24h, then stops heating and standing being cooled to room temperature, filter cake is collected by filtration, is washed with deionized to cleaning solution
PH is prepared into aqueous etching polysilicon chip to after neutrality；Collect electrolytic aluminium factory waste gas containing fluoride and be heated to 70 DEG C, be prepared into hot place
Waste gas containing fluoride is managed, is then passed through with vacuum pump by waste gas containing fluoride is heat-treated in Surface Treatment with Plasma device, it is fluorine-containing useless being heat-treated
Under gas atmosphere, the above-mentioned aqueous etching polysilicon chip of preparation is placed in discharge treatment 15min under 15kV Surface Treatment with Plasma devices,
It is then turned off vacuum pump and is passed through air, standing is cooled to room temperature, you can is prepared into polysilicon suede prepared by a kind of two-phase corrosion
Face.
Claims (1)
1. a kind of method that two-phase corrosion prepares polycrystalline silicon suede, it is characterised in that specifically preparation process is：
(1) polysilicon chip is chosen, after it is cleaned 3~5 times respectively with absolute ethyl alcohol and deionized water, is surpassed under 200~300W
Sound 10~15min of decentralized processing, the polysilicon chip after ultrasonic cleaning is then taken out be placed in drying process 25 at 45~50 DEG C
~30min, is prepared into pretreatment polysilicon chip, spare；
(2) count in parts by weight, weigh 25~30 parts of 10% hydrogen peroxide solutions of mass fraction, 10~15 parts of mass fractions respectively
5% hydrochloric acid solution and 1~2 part of 10% liquor potassic permanganate of mass fraction are placed in beaker, are stirred and are prepared into liquid phase oxidation
Liquid；
(3) in mass ratio 1:2:20, by Ozone Water, step (1) spare pretreatment polysilicon chip and the Oxygen in Liquid of above-mentioned preparation
Change liquid to be stirred and be added in autoclave, at 45~50 DEG C after 10~15min of heating water bath, to autoclave
In be passed through chlorine and under chlorine atmosphere, 20~24h of insulation reaction, then stops heating and stands and is cooled to room temperature, and filtering is received
Collect filter cake, after being washed with deionized to cleaning solution pH to neutrality, be prepared into aqueous etching polysilicon chip；
(4) collect electrolytic aluminium factory waste gas containing fluoride and be heated to 65~70 DEG C, be prepared into heat treatment waste gas containing fluoride, then use vacuum pump
Heat treatment waste gas containing fluoride is passed through in Surface Treatment with Plasma device, in the case where being heat-treated waste gas containing fluoride atmosphere, by the above-mentioned liquid of preparation
Mutually corrosion polysilicon chip is placed in 10~15min of discharge treatment under 10~15kV Surface Treatment with Plasma devices, is then turned off vacuum pump
And air is passed through, standing is cooled to room temperature, you can is prepared into polycrystalline silicon suede prepared by a kind of two-phase corrosion.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61219181A (en) * | 1985-03-25 | 1986-09-29 | Sharp Corp | Thin film solar cell |
| CN102427097A (en) * | 2011-11-23 | 2012-04-25 | 中国科学院物理研究所 | Oxidization and passivation method and passivation device of silicon |
| CN102443801A (en) * | 2010-10-08 | 2012-05-09 | 华康半导体股份有限公司 | Method for forming micropore structure or groove structure on surface of silicon crystal substrate |
| JP2013168505A (en) * | 2012-02-15 | 2013-08-29 | Ulvac Japan Ltd | Method for forming texture structure |
| CN106024988A (en) * | 2016-07-26 | 2016-10-12 | 南京科乃迪科环保科技有限公司 | One-step wet black silicon preparation and surface treatment method |
-
2016
- 2016-11-02 CN CN201610946908.0A patent/CN106409973B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61219181A (en) * | 1985-03-25 | 1986-09-29 | Sharp Corp | Thin film solar cell |
| CN102443801A (en) * | 2010-10-08 | 2012-05-09 | 华康半导体股份有限公司 | Method for forming micropore structure or groove structure on surface of silicon crystal substrate |
| CN102427097A (en) * | 2011-11-23 | 2012-04-25 | 中国科学院物理研究所 | Oxidization and passivation method and passivation device of silicon |
| JP2013168505A (en) * | 2012-02-15 | 2013-08-29 | Ulvac Japan Ltd | Method for forming texture structure |
| CN106024988A (en) * | 2016-07-26 | 2016-10-12 | 南京科乃迪科环保科技有限公司 | One-step wet black silicon preparation and surface treatment method |
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