CN106409957A - Large area ultra-thin graphene/MoS2 superlattice heterostructure material - Google Patents
Large area ultra-thin graphene/MoS2 superlattice heterostructure material Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 89
- 229910052982 molybdenum disulfide Inorganic materials 0.000 title claims abstract description 46
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052961 molybdenite Inorganic materials 0.000 title abstract description 29
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 88
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 86
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000002360 preparation method Methods 0.000 claims abstract description 22
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 77
- 239000011733 molybdenum Substances 0.000 claims description 77
- 229910052750 molybdenum Inorganic materials 0.000 claims description 77
- 239000010408 film Substances 0.000 claims description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 17
- 239000011888 foil Substances 0.000 claims description 15
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000011889 copper foil Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000005987 sulfurization reaction Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000003814 drug Substances 0.000 claims description 6
- 229940079593 drug Drugs 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000001228 spectrum Methods 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 239000011593 sulfur Substances 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- 238000004062 sedimentation Methods 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- -1 graphite Alkene Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 24
- 239000002356 single layer Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 206010034972 Photosensitivity reaction Diseases 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000036211 photosensitivity Effects 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
- 238000001069 Raman spectroscopy Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 230000010307 cell transformation Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
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Abstract
The invention provides a large area ultra-thin graphene/MoS2 superlattice heterostructure material. A multi-layer film formed by graphene and MoS2 is prepared by a hierarchical transfer method, the thickness of the graphene is 0.34 to 2 nm, the area requirement is 0.25 mm2 to 1 cm2, the thickness of the MoS2 is 0.65 to 3.5 nm, the area requirement is 0.25 mm2 to 1cm2, a chemical vapor deposition method is used for preparation, the wet method cycle transfer is used until the total thickness reaches 3.96-110 nm, a superlattice heterostructure is formed, a superlattice heterostructure is formed, and the superlattice heterostructure material formed by large area ultra-thin graphene/MoS2 is used for a two-dimensional material/ monocrystalline silicon heterogeneous solar cell. The large area ultra-thin graphene/MoS2 superlattice heterostructure material has the advantages that under the premise of not increasing equipment cost, the novel ultra-thin two-dimensional superlattice material/monocrystalline silicon heterogeneous solar cell is prepared, and the photoelectric conversion efficiency of the battery is improved.
Description
Technical field
The invention belongs to New Two Dimensional material/monocrystal silicon heterogeneous solar cell field, particularly to a kind of large-area ultrathin
Graphene/molybdenum bisuphide superlattices dissimilar materials and its preparation method and application.
Background technology
In the face of the energy shortage problem that the whole world is increasingly serious, solaode has cleaning, free of contamination feature day because of it
Benefit becomes one of important means solving environmental problem and energy problem.With the continuous development of technology, to this two-dimensional material/
The research of the heterogeneous novel solar battery of monocrystal silicon is also more and more extensive, because its structure is simple, low cost of manufacture, power consumption low,
Manufacture process is pollution-free, becomes the important directions of following solar cell development.
In New Two Dimensional material/heterogeneous solar cell of monocrystal silicon, the requirement to p-type and n-layer material be high conductivity and
Better photosensitivity, wherein high conductivity are conducive to transporting of photo-generated carrier, and better photosensitivity is conducive to raising photo-generated carrier dense
Degree -- Graphene has the carrier mobility of good metalloid, but Graphene, from as close to zero gap semiconductor, does not have
There are photoelectric effect, MoS2There is good photoelectric effect, but MoS2Carrier mobility be much smaller than Graphene, using superlattices
Structure obtains high heliosensitivity while can taking into account carrier vertical transport characteristic, finally improves heterogeneous solar cell conversion effect
Rate.
At present, widely use two-dimensional material as window in New Two Dimensional material/monocrystal silicon heterogeneous solaode research
Mouth layer material, molybdenum bisuphide is hexagonal system structure, and monolayer molybdenum bisuphide is direct band-gap semicondictor compared with single-layer graphene
(band gap magnitude be 1.8eV), increases band gap magnitude with thickness and is gradually reduced, and transition is that (band gap magnitude is indirect band-gap semiconductor
1.2eV), and MoS2There is bandnesting and van hove singularity, there is the higher density of states, so MoS2Have good
Photoelectric characteristic, but the MoS of multilamellar2For indirect band-gap semiconductor, it is unfavorable for the absorption to photon, so using close to monolayer
MoS2, in order to increase MoS2Thickness and ensure that it is direct band-gap semicondictor, in MoS2Between embedded graphene layer, constitute
Molybdenum bisuphide/Graphene superlattice structure, not only improves the transport of carrier, can increase the absorption to photon again, realizes big
The preparation of the ultra-thin Graphene of area/molybdenum bisuphide superlattices dissimilar materials, selects MoS2It is used as the carrier of opto-electronic conversion.Pass
System silicon-base thin-film battery another part optical loss is not up to intrinsic layer just by the part of front electrode or Window layer reflection.Pin
To this problem, the method that most of research institution is adopted is in MoS2Layer of transparent conductive film Graphene is covered on thin film,
The transparency of single-layer graphene can reach more than 90%, and Graphene has good electrology characteristic, when solar spectrum shines
It is mapped on Graphene, it is only capable of light absorbing 2.3% about.So when solar spectrum, to incide two-dimensional material/monocrystal silicon heterogeneous
During battery, because Graphene has high transmission rate, and electrology characteristic is fabulous, monolayer MoS2Direct band gap can reach
1.8eV, has good photoelectric characteristic, and photoelectric transformation efficiency can reach preferable effect, is finally reached raising solaode
Efficiency, reduces cost simultaneously, simplify the purpose of technique.
Analysis from above is found out, how to develop with high conductivity, better photosensitivity, increases photoelectric transformation efficiency simultaneously
Super crystal lattice material be the key point preparing the heterogeneous battery of two-dimensional material/monocrystal silicon.For this reason, the present invention proposes a kind of large area surpassing
Thin Graphene/molybdenum bisuphide superlattices dissimilar materials and preparation method thereof, efficiently solves above-mentioned problem.
Content of the invention
The purpose of the present invention is for above-mentioned existing problems, provides a kind of large-area ultrathin Graphene/molybdenum bisuphide super brilliant
Lattice dissimilar materials and its preparation method and application, this superlattices dissimilar materials has high conductivity, better photosensitivity, can greatly increase
Photoelectric transformation efficiency, and by modulating MoS2Film deposition conditions, improve New Two Dimensional material/heterogeneous solar cell of monocrystal silicon
Open-circuit voltage and fill factor, curve factor, thus improving efficiency of solar cell.
Technical scheme：
A kind of large-area ultrathin Graphene/molybdenum sulfide superlattices dissimilar materials, is using the preparation of layer-transferred transfer method
By the plural layers of Graphene and sulfuration molybdenum film alternating growth, material area reaches 0.25mm2-1cm2, the thickness of molybdenum sulfide is
0.65-3.5nm, the thickness of Graphene is 0.34-2nm, and the cycle of superlattices hetero-junctions is set to 4-20, each cycle period
Thickness be 0.99-5.5nm, then utilize wet recycle transfer until forming gross thickness is that the thick superlattices of 3.96-110nm are different
Matter structure, as large-area ultrathin Graphene/molybdenum bisuphide superlattices dissimilar materials.
A kind of preparation method of described large-area ultrathin Graphene/molybdenum bisuphide superlattices dissimilar materials, step is as follows：
1) preparation of large-area graphene film
With Copper Foil for Graphene deposition substrate, first Copper Foil is put in the dilute hydrochloric acid solution that concentration is 5wt%, ultrasonic
5min, then takes out Copper Foil and puts ultrasonic 10min in deionized water, taking-up nitrogen gun dries up, then utilize PECVD (wait from
Daughter strengthen chemical vapour deposition technique) growing large-area graphene film, wherein depositing temperature be 300-750 DEG C, reactant gas source
For the mixed gas of methane, hydrogen and argon, in mixed gas, methane accounts for the 20-50% of total volumetric flow of gas, hydrogen accounts for always
The 1-15% of volumetric flow of gas, other be argon, power be 100-300W, pressure be 50-1000Pa, sedimentation time be 10-
100s, prepared graphene film, described PECVD depositing device model 13.56MHz-100MHz；
2) preparation of large area molybdenum disulfide film
Large area molybdenum bisuphide is prepared by CVD method (chemical vapour deposition technique), growth material selects sulfur and molybdenum foil,
Carry out molybdenum foil sulfuration, temperature is 500-700 DEG C, the flow that is passed through of argon is 50-100sccm, and growth time is 1- in tube furnace
60min, prepared molybdenum disulfide film, described depositing device is three-temperature-zone tube furnace；
3) preparation of Graphene/molybdenum bisuphide superlattices dissimilar materials
First large area molybdenum disulfide film is transferred to SiO2In liner body, method is in deposition curing using spin coating instrument
The uniform PMMA of one layer of spin coating on the molybdenum foil of molybdenum film, spin coater runs 5s, again in 3000r/min height under 150r/min low speed
Speed is lower to run 1min, then baking the affected part after applying some drugs 2min at 80 DEG C, repeats above step, completes second whirl coating and baking the affected part after applying some drugs, then utilize
Concentration is the FeCl of 0.5mol/L3The molybdenum foil of bottom is etched away by solution, forms the molybdenum disulfide film suspending in the solution, so
By the way of fishing for, molybdenum disulfide film is transferred to SiO afterwards2In liner body, then soak and remove photoresist in acetone；Using above-mentioned
Identical method, completes the transfer of graphene film, after shifting molybdenum bisuphide and graphene film successively, forms large-area ultrathin
Graphene/molybdenum bisuphide superlattices dissimilar materials.
A kind of application of described large-area ultrathin Graphene/molybdenum bisuphide superlattices dissimilar materials, for two-dimensional material/mono-
The heterogeneous solar cell of crystal silicon, this heterogeneous solar cell is by bottom electrode, n-type monocrystal silicon, SiO2Layer, large-area ultrathin Graphene/bis-
Molybdenum sulfide superlattices dissimilar materials, Top electrode are sequentially overlapped composition, and wherein large-area ultrathin Graphene/molybdenum bisuphide superlattices are different
Material is p-type semiconductor, is made up of for 4-20 multi-layer graphene-molybdenum disulfide film the number of plies, and it is with n-type single-crystal silicon substrate structure
Become built in field, realize the photoelectric conversion to 300-800nm wave band solar spectrum.
The Analysis on Mechanism of the present invention：
In New Two Dimensional material/heterogeneous solar cell of monocrystal silicon, the requirement to p-type and n-layer material is high conductivity
And better photosensitivity, because high conductivity is conducive to the transport of carrier, better photosensitivity is conducive to the absorption to photon, improves photoproduction
Carrier concentration, and then improve photoelectric efficiency.In order to improve the mobility of carrier, simplest method is plating last layer tool
There is the preferable transparent conductive film of electrology characteristic.But because Graphene is simple substance structure, and Graphene is from as close to zero
Gap semiconductor, does not have photoelectric effect, but MoS2There is good photoelectric effect (MoS2Carrier mobility be much smaller than stone
Black alkene), and molybdenum bisuphide is hexagonal system structure, and monolayer molybdenum bisuphide is direct band-gap semicondictor compared with single-layer graphene
(band gap magnitude be 1.8eV), increases band gap magnitude with thickness and is gradually reduced, and transition is that (band gap magnitude is indirect band-gap semiconductor
1.2eV), so selecting MoS2It is used as the carrier of opto-electronic conversion.The knot of Graphene/molybdenum bisuphide/Graphene/molybdenum bisuphide
Structure can ensure that molybdenum bisuphide is (direct band gap) increase light absorbs in the case of monolayer, so can take into account using superlattice structure
Obtain high heliosensitivity while carrier vertical transport characteristic, finally improve heterogeneous solar cell transformation efficiency.
The present invention proposes large-area ultrathin Graphene/molybdenum bisuphide superlattices dissimilar materials, on the one hand, but due to graphite
Alkene is simple substance structure, and Graphene is not from as close to zero gap semiconductor, having photoelectric effect, and molybdenum bisuphide is hexagonal crystal system
Structure, monolayer molybdenum bisuphide is direct band-gap semicondictor (band gap magnitude is 1.8eV) compared with single-layer graphene, due to MoS2Exist
Bandnesting and van hove singularity, have the higher density of states, so MoS2There is good photoelectric characteristic, but multilamellar
MoS2For indirect band-gap semiconductor, it is unfavorable for the absorption to photon, so adopting monolayer MoS2, in order to increase MoS2Thickness,
Ensure that it is direct band-gap semicondictor, in MoS again2Between embedded graphene layer, constitute molybdenum bisuphide/Graphene superlattices knot
Structure, not only improves the transport of carrier, can increase the absorption to photon again, realizes large-area ultrathin Graphene/molybdenum bisuphide
The preparation of superlattices dissimilar materials, improves photoelectric transformation efficiency.So selecting MoS2It is used as the carrier of opto-electronic conversion, in conjunction with
The good electric conductivity of Graphene, then by optimizing the sedimentary condition of Graphene and molybdenum bisuphide superlattices dissimilar materials, to obtain
Optimum Graphene/molybdenum bisuphide superlattices dissimilar materials；On the other hand, deposit described large-area ultrathin Graphene/curing
The feature of molybdenum superlattices dissimilar materials, low power condition effectively reduces charged particle in plasma and intrinsic layer surface is banged
Hit, compared with traditional two-dimensional material/monocrystal silicon dissimilar materials, using Graphene/molybdenum bisuphide/Graphene/molybdenum bisuphide
Superlattice structure can ensure that molybdenum bisuphide is (direct band gap) increase light absorbs in the case of monolayer, is finally reached raising conversion effect
The purpose of rate.So, this large-area ultrathin Graphene/molybdenum bisuphide superlattices dissimilar materials, carrier can be taken into account
Obtain high heliosensitivity while vertical transport characteristic, therefore become the ideal chose of two-dimensional material/monocrystal silicon dissimilar materials.
The invention has the beneficial effects as follows：
The present invention is using the MoS close to monolayer2, in order to increase MoS2Thickness, ensure that it is that direct band gap is partly led again
Body, we are in MoS2Between embedded graphene layer, constitute molybdenum bisuphide/Graphene superlattice structure, not only improve carrier
Transport, can increase the absorption to photon again, realize the system of large-area ultrathin Graphene/molybdenum bisuphide superlattices dissimilar materials
Standby, improve photoelectric transformation efficiency；With respect to the high conductivity needed for traditional p-type window layer, solar cell, broad-band gap and ultralow light
Learn loss feature to obtain simultaneously；This material is used for the Window layer of two-dimensional material/monocrystal silicon dissimilar materials solar cell, and tradition
P-type window layer material is compared, and the built in field of battery on the one hand can be made to be greatly improved, and then significantly improves the open circuit electricity of battery
Press and be expected to be allowed to break through conventional cap；On the other hand the optical loss that transparency electrode and Window layer cause can be significantly reduced,
Improve short wave response and the short-circuit current density of battery, on the premise of not increasing equipment cost, finally improve New Two Dimensional material
The photoelectric transformation efficiency of material/monocrystal silicon dissimilar materials solar cell.
Brief description
Fig. 1 is p-n junction two-dimensional material/monocrystal silicon dissimilar materials battery structure schematic diagram that substrate is monocrystal silicon.
In figure：1. metallic bottom electrode Ti 2.n- type monocrystal silicon 3.SiO2Layer 4. large-area ultrathin Graphenes/molybdenum bisuphide
Superlattices dissimilar materials 5. metallic top electrode Ti.
Fig. 2 (a) is the MoS by AFM (atomic force microscope) to the method growth being vulcanized using molybdenum foil2Thin film carries out table
Levy, the shape appearance figure obtaining；
Fig. 2 (b) is the MoS that represents upper in shape appearance figure (a)2The average thickness figure of thin film.
Fig. 3 (a) is to using PECVD (plasma enhanced chemical vapor deposition method) by AFM (atomic force microscope)
The graphene film of growth is characterized, the shape appearance figure obtaining；
Fig. 3 (b) is by Raman tester, Graphene to be characterized, the Raman figure obtaining.
Fig. 4 is conversion efficiency figure and the two-dimensional superlattice material/monocrystalline of p-n junction two-dimensional material/single crystal silicon solar cell
The conversion efficiency figure of the heterogeneous solaode of silicon.
Specific embodiment
Embodiment 1：
A kind of large-area ultrathin Graphene/molybdenum sulfide superlattices dissimilar materials, is using the preparation of layer-transferred transfer method
By the plural layers of Graphene and sulfuration molybdenum film alternating growth, material area reaches 1cm2, the thickness of molybdenum sulfide is 2nm, stone
The thickness of black alkene is 1nm, and the cycle of superlattices hetero-junctions is set to 5, and the thickness of each cycle period is 3nm, then utilizes
Wet recycle transfer is until form the Superlattice Heterostructures that gross thickness is 15nm thickness, as large-area ultrathin Graphene/bis- sulfur
Change molybdenum superlattices dissimilar materials.
The preparation method of described large-area ultrathin Graphene/molybdenum bisuphide superlattices dissimilar materials, step is as follows：
1) preparation of large-area graphene film
With Copper Foil for Graphene deposition substrate, first Copper Foil is put in the dilute hydrochloric acid solution that concentration is 5wt%, ultrasonic
5min, then takes out Copper Foil and puts ultrasonic 10min in deionized water, taking-up nitrogen gun dries up, then utilize PECVD (wait from
Daughter strengthen chemical vapour deposition technique) growing large-area graphene film, wherein depositing temperature be 650 DEG C, reactant gas source be first
The mixed gas of alkane, hydrogen and argon, in mixed gas, methane accounts for the 30% of total volumetric flow of gas, and hydrogen accounts for total gas volume
The 11% of flow, argon account for the 59% of total volumetric flow of gas, power be 200W, pressure be 200Pa, sedimentation time be 50s,
Prepared graphene film, described PECVD depositing device model 13.56MHz-100MHz；
Fig. 3 (a) and (b) are to using PECVD (plasma enhanced chemical gas respectively by AFM (atomic force microscope)
Phase sedimentation) graphene film that grows characterized, the shape appearance figure obtaining and carry out table to Graphene by Raman tester
Levy, the Raman figure obtaining；Can show that continuous graphene film is formed, and coverage rate almost can reach 100%,
By the ratio at the good G peak in the D peak of Raman in figure it can be determined that the graphene film defect going out generation is few, crystalline quality is high.
2) preparation of large area molybdenum disulfide film
Large area molybdenum bisuphide is prepared by CVD method (chemical vapour deposition technique), growth material selects sulfur and molybdenum foil, molybdenum
The size of paper tinsel be 2cm × 2cm, sulfur consumption be 1g, tube furnace carries out molybdenum foil sulfuration, temperature be 600 DEG C, argon be passed through stream
Measure as 50sccm, growth time is 20min, prepared molybdenum disulfide film, described depositing device is three-temperature-zone tube furnace；
Fig. 2 (a) and (b) are the MoS to the method growth being vulcanized using molybdenum foil respectively by AFM (atomic force microscope)2
Thin film is characterized, the shape appearance figure obtaining and in the upper MoS representing of shape appearance figure (a)2The average thickness figure of thin film；Profit can be drawn
Prepare the MoS close to monolayer with the method for molybdenum foil sulfuration2Thin film.
3) preparation of Graphene/molybdenum bisuphide superlattices dissimilar materials
First large area molybdenum disulfide film is transferred to SiO2In liner body, method is in deposition curing using spin coating instrument
The uniform PMMA of one layer of spin coating on the molybdenum foil of molybdenum film, spin coater runs 5s, again in 3000r/min height under 150r/min low speed
Speed is lower to run 1min, then baking the affected part after applying some drugs 2min at 80 DEG C, repeats above step, completes second whirl coating and baking the affected part after applying some drugs, then utilize
Concentration is the FeCl of 0.5mol/L3The molybdenum foil of bottom is etched away by solution, forms the molybdenum disulfide film suspending in the solution, so
By the way of fishing for, molybdenum disulfide film is transferred to SiO afterwards2In liner body, then soak and remove photoresist in acetone；Using above-mentioned
Identical method, completes the transfer of graphene film, after shifting molybdenum bisuphide and graphene film successively, forms large-area ultrathin
Graphene/molybdenum bisuphide superlattices dissimilar materials.
A kind of application of described large-area ultrathin Graphene/molybdenum bisuphide superlattices dissimilar materials, for two-dimensional material/mono-
The heterogeneous solar cell of crystal silicon, as shown in figure 1, this heterogeneous solar cell is by metallic bottom electrode Ti 1, n-type monocrystal silicon 2, SiO2Layer
3rd, large-area ultrathin Graphene/molybdenum bisuphide superlattices dissimilar materials 4 and metallic top electrode Ti 5 are sequentially overlapped composition, wherein greatly
The ultra-thin Graphene of area/molybdenum bisuphide superlattices dissimilar materials 4 is p-type semiconductor, the Graphene-curing being 5 layers by the number of plies
Molybdenum film forms, and it constitutes built in field with n-type single-crystal silicon substrate, realizes the photoelectricity of 300-800nm wave band solar spectrum is turned
Change.
Fig. 1 is the structural representation of p-n junction two-dimensional material/single crystal silicon solar cell.
Fig. 4 is conversion efficiency figure and the two-dimensional superlattice material/monocrystalline of p-n junction two-dimensional material/single crystal silicon solar cell
The conversion efficiency figure of the heterogeneous solaode of silicon, can be drawn by figure, the opening of simple two-dimensional material/single crystal silicon solar cell
Road voltage is 0.37V, and short circuit current is 18mA/cm2, fill factor, curve factor is 45%, and electricity conversion is only 2.9%.Two dimension is super
The open-circuit voltage of the heterogeneous solaode of lattice material/monocrystal silicon is 0.53V, and short circuit current reaches 22.8mA/cm2, filling because
Son is 60%, and electricity conversion increases to 7.25%.By contrast, using the two-dimensional superlattice of two-dimensional superlattice material preparation
The heterogeneous solaode of material/monocrystal silicon, either from opening pressure, short circuit current, or fill factor, curve factor, and the final effect obtaining
Rate, is obviously improved.So solaode is prepared using superlattice structure so that the performance of battery has obtained further
Optimization, there is very high Research Significance.
It should be noted that the deposition process compatibility deposited graphite alkene of the present invention, MoS2The deposition work of the two-dimensional material such as thin film
Skill basis, method simply it is easy to operation and realization, is suitable for large batch of industrialized production.
The above, the only present invention preferably specific embodiment, but protection scope of the present invention is not limited thereto,
Any be familiar with those skilled in the art the invention discloses technical scope in, the change or replacement that can readily occur in, all
Should cover within the scope of the present invention.Therefore, protection scope of the present invention should be defined by scope of the claims.
Claims (3)
1. a kind of large-area ultrathin Graphene/molybdenum sulfide superlattices dissimilar materials it is characterised in that：It is using layer-transferred transfer side
The plural layers by Graphene and sulfuration molybdenum film alternating growth of method preparation, material area reaches 0.25mm2-1cm2, molybdenum sulfide
Thickness be 0.65-3.5nm, the thickness of Graphene is 0.34-2nm, and the cycle of superlattices hetero-junctions is set to 4-20, each
The thickness of cycle period is 0.99-5.5nm, then utilizes wet recycle transfer until forming gross thickness is that 3.96-110nm is thick
Superlattice Heterostructures, as large-area ultrathin Graphene/molybdenum bisuphide superlattices dissimilar materials.
2. a kind of preparation method of large-area ultrathin Graphene as claimed in claim 1/molybdenum bisuphide superlattices dissimilar materials, its
It is characterised by that step is as follows：
1) preparation of large-area graphene film
With Copper Foil for Graphene deposition substrate, first Copper Foil is put in the dilute hydrochloric acid solution that concentration is 5wt%, ultrasonic 5min, so
Take out Copper Foil afterwards and put ultrasonic 10min in deionized water, taking-up nitrogen gun dries up, then utilize PECVD (plasma enhancing
Chemical vapour deposition technique) growing large-area graphene film, wherein depositing temperature be 300-750 DEG C, reactant gas source be methane, hydrogen
Gas and the mixed gas of argon, in mixed gas, methane accounts for the 20-50% of total volumetric flow of gas, hydrogen accounts for total gas volume flow
Amount 1-15%, other be argon, power be 100-300W, pressure be 50-1000Pa, sedimentation time be 10-100s, prepared stone
Black alkene thin film, described PECVD depositing device model 13.56MHz-100MHz；
2) preparation of large area molybdenum disulfide film
Large area molybdenum bisuphide is prepared by CVD method (chemical vapor deposition), growth material selects sulfur and molybdenum foil, in tube furnace
In carry out molybdenum foil sulfuration, temperature be 500-700 DEG C, argon be passed through flow be 50-100sccm, growth time be 1-60min,
Prepared molybdenum disulfide film, described depositing device is three-temperature-zone tube furnace；
3) preparation of Graphene/molybdenum bisuphide superlattices dissimilar materials
First large area molybdenum disulfide film is transferred to SiO2In liner body, method is thin in deposition molybdenum bisuphide using spin coating instrument
The uniform PMMA of one layer of spin coating on the molybdenum foil of film, spin coater runs 5s, under 150r/min low speed again under 3000r/min high speed
Run 1min, then baking the affected part after applying some drugs 2min at 80 DEG C, repeat above step, complete second whirl coating and baking the affected part after applying some drugs, then utilize concentration
FeCl for 0.5mol/L3The molybdenum foil of bottom is etched away by solution, forms the molybdenum disulfide film suspending in the solution, then adopts
With the mode fished for, molybdenum disulfide film is transferred to SiO2In liner body, then soak and remove photoresist in acetone；Using above-mentioned identical
Method, complete the transfer of graphene film, successively transfer molybdenum bisuphide and graphene film after, formed large-area ultrathin graphite
Alkene/molybdenum bisuphide superlattices dissimilar materials.
3. a kind of application of large-area ultrathin Graphene as claimed in claim 1/molybdenum bisuphide superlattices dissimilar materials, its feature
It is：For the heterogeneous solar cell of two-dimensional material/monocrystal silicon, this heterogeneous solar cell is by bottom electrode, n-type monocrystal silicon, SiO2
Layer, large-area ultrathin Graphene/molybdenum bisuphide superlattices dissimilar materials, Top electrode are sequentially overlapped composition, wherein large-area ultrathin
Graphene/molybdenum bisuphide superlattices dissimilar materials is p-type semiconductor, is 4-20 multi-layer graphene-molybdenum disulfide film by the number of plies
Composition, it constitutes built in field with n-type single-crystal silicon substrate, realizes the photoelectric conversion to 300-800nm wave band solar spectrum.
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Effective date of registration: 20240625 Address after: Room 103, North Building, Building 3, Zhonghe Science and Technology Innovation Industrial Park, Southwest Corner of Longquan Road and North Ring Road Intersection, Ludian Street, Dengfeng City, Zhengzhou City, Henan Province, 452470 Patentee after: China Hydrogen Corporation (Dengfeng City) Technology Equipment Co.,Ltd. Country or region after: China Address before: Room 1801, Cross border Trade Building, Intersection of Jinsui Avenue and Xin'er Street, Hongqi District, Xinxiang City, Henan Province, 453000 (west of 107) Patentee before: China Hydrogen Corporation (Henan) Energy Technology Co.,Ltd. Country or region before: China |