CN106409957A - Large area ultra-thin graphene/MoS2 superlattice heterostructure material - Google Patents
Large area ultra-thin graphene/MoS2 superlattice heterostructure material Download PDFInfo
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- CN106409957A CN106409957A CN201611018756.4A CN201611018756A CN106409957A CN 106409957 A CN106409957 A CN 106409957A CN 201611018756 A CN201611018756 A CN 201611018756A CN 106409957 A CN106409957 A CN 106409957A
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- graphene
- molybdenum
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- 239000000463 material Substances 0.000 title claims abstract description 89
- 229910052982 molybdenum disulfide Inorganic materials 0.000 title claims abstract description 46
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052961 molybdenite Inorganic materials 0.000 title abstract description 29
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 88
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 86
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000002360 preparation method Methods 0.000 claims abstract description 22
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 77
- 239000011733 molybdenum Substances 0.000 claims description 77
- 229910052750 molybdenum Inorganic materials 0.000 claims description 77
- 239000010408 film Substances 0.000 claims description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 17
- 239000011888 foil Substances 0.000 claims description 15
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000011889 copper foil Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000005987 sulfurization reaction Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000003814 drug Substances 0.000 claims description 6
- 229940079593 drug Drugs 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000001228 spectrum Methods 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 239000011593 sulfur Substances 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- 238000004062 sedimentation Methods 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- -1 graphite Alkene Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
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- 239000004575 stone Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 24
- 239000002356 single layer Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 206010034972 Photosensitivity reaction Diseases 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000036211 photosensitivity Effects 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
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- 239000013078 crystal Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
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- 230000003287 optical effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 230000010307 cell transformation Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
- H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
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Priority Applications (1)
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CN201611018756.4A CN106409957B (en) | 2016-11-21 | 2016-11-21 | A kind of large-area ultrathin graphene/molybdenum disulfide superlattices dissimilar materials |
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CN201611018756.4A CN106409957B (en) | 2016-11-21 | 2016-11-21 | A kind of large-area ultrathin graphene/molybdenum disulfide superlattices dissimilar materials |
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CN106409957A true CN106409957A (en) | 2017-02-15 |
CN106409957B CN106409957B (en) | 2018-06-19 |
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CN201611018756.4A Active CN106409957B (en) | 2016-11-21 | 2016-11-21 | A kind of large-area ultrathin graphene/molybdenum disulfide superlattices dissimilar materials |
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Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107808767A (en) * | 2017-10-10 | 2018-03-16 | 西安交通大学 | One kind is based on the liquid infusion method enhancing ferromagnetic method of single-layer molybdenum disulfide film |
CN108176393A (en) * | 2017-12-27 | 2018-06-19 | 肇庆市华师大光电产业研究院 | A kind of orderly, high density Ag-Al2O3-MoS2The preparation method of nanostructured |
CN108899423A (en) * | 2018-06-28 | 2018-11-27 | 上海电力学院 | A kind of efficient two-dimensional superlattice heterojunction photovoltaic device and its preparation |
CN109019569A (en) * | 2017-06-08 | 2018-12-18 | 中国科学院金属研究所 | High-quality graphene/two-dimensional metallic carbide crystalline vertical heterojunction structure material and preparation method thereof |
CN109824043A (en) * | 2017-11-23 | 2019-05-31 | 中国科学院金属研究所 | The method for being bubbled transfer graphene speed is improved by regulation transfer medium layer flexibility |
CN110444622A (en) * | 2019-06-26 | 2019-11-12 | 北京铂阳顶荣光伏科技有限公司 | The preparation method of thin-film solar cells Window layer |
CN110592658A (en) * | 2019-09-04 | 2019-12-20 | 复旦大学 | Preparation method for realizing surface epitaxial growth of metal organic framework by matching two-dimensional material template with lattice symmetry |
CN110729297A (en) * | 2019-10-24 | 2020-01-24 | 北京科技大学 | Graphite alkyne and molybdenum disulfide combined nonvolatile multilevel photoelectric memory and preparation |
CN111025690A (en) * | 2019-12-13 | 2020-04-17 | 国家纳米科学中心 | Graphene plasmon device for all-optical modulation and preparation method thereof |
CN111235601A (en) * | 2020-03-19 | 2020-06-05 | 国家纳米科学中心 | Composite film, electro-catalytic hydrogen evolution device, and preparation method and application thereof |
CN111244222A (en) * | 2020-01-20 | 2020-06-05 | 中国科学院半导体研究所 | Hexagonal boron nitride ultraviolet light detector and preparation method thereof |
CN111485212A (en) * | 2020-06-04 | 2020-08-04 | 兰州文理学院 | Preparation method of molybdenum disulfide-carbon multilayer film with sub-10-nanometer bionic structure |
CN111889112A (en) * | 2020-08-04 | 2020-11-06 | 杭州紫芯光电有限公司 | MoS2Preparation method of/Graphene two-dimensional material heterojunction visible-light-driven photocatalyst |
CN112281137A (en) * | 2020-09-15 | 2021-01-29 | 电子科技大学 | Method for regulating and controlling number of layers of molybdenum disulfide in graphene/molybdenum disulfide heterojunction |
CN112320788A (en) * | 2020-09-28 | 2021-02-05 | 中国电子科技集团公司第十三研究所 | Preparation method of large-size two-dimensional material heterostructure |
CN113097331A (en) * | 2021-02-24 | 2021-07-09 | 重庆科技学院 | Infrared detector based on graphene and quantum dots |
US11417790B2 (en) | 2017-11-23 | 2022-08-16 | Samsung Electronics Co., Ltd. | Avalanche photodetectors and image sensors including the same |
Citations (4)
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CN102344131A (en) * | 2011-07-06 | 2012-02-08 | 中国科学院上海微***与信息技术研究所 | Method for manufacturing graphene film on molybdenum-based substrate |
CN103579419A (en) * | 2013-11-13 | 2014-02-12 | 苏州科技学院 | Grapheme/MoS2/Si heterojunction thin-film solar cell and manufacturing method thereof |
CN104218114A (en) * | 2014-08-28 | 2014-12-17 | 太原理工大学 | Two-dimensional heterojunction solar cell and manufacturing method thereof |
CN105206807A (en) * | 2015-09-07 | 2015-12-30 | 合肥工业大学 | MoS2/C superlattice heterojunction nano-sheet self-assembled nano-tube as well as preparation method and application thereof |
-
2016
- 2016-11-21 CN CN201611018756.4A patent/CN106409957B/en active Active
Patent Citations (4)
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CN102344131A (en) * | 2011-07-06 | 2012-02-08 | 中国科学院上海微***与信息技术研究所 | Method for manufacturing graphene film on molybdenum-based substrate |
CN103579419A (en) * | 2013-11-13 | 2014-02-12 | 苏州科技学院 | Grapheme/MoS2/Si heterojunction thin-film solar cell and manufacturing method thereof |
CN104218114A (en) * | 2014-08-28 | 2014-12-17 | 太原理工大学 | Two-dimensional heterojunction solar cell and manufacturing method thereof |
CN105206807A (en) * | 2015-09-07 | 2015-12-30 | 合肥工业大学 | MoS2/C superlattice heterojunction nano-sheet self-assembled nano-tube as well as preparation method and application thereof |
Non-Patent Citations (4)
Title |
---|
FU, W ET AL.: "In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures", 《SCIENTIFIC REPORTS》 * |
KANG, J ET AL.: "Electronic Structural Moire Pattern Effects on MoS2/MoSe2 2D Heterostructures", 《NANO LETTERS》 * |
LI, XD ET AL.: "Structural and Electronic Properties of Superlattice Composed of Graphene and Monolayer MoS2", 《JOURNAL OF PHYSICAL CHEMISTRY C》 * |
LIU, XG ET AL.: "Electric Field and Strain Effect on Graphene-MoS2 Hybrid Structure: Ab Initio Calculations", 《JOURNAL OF PHYSICAL CHEMISTRY LETTERS》 * |
Cited By (25)
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CN109019569B (en) * | 2017-06-08 | 2021-05-28 | 中国科学院金属研究所 | High-quality graphene/two-dimensional metal carbide crystal vertical heterostructure material and preparation method thereof |
CN109019569A (en) * | 2017-06-08 | 2018-12-18 | 中国科学院金属研究所 | High-quality graphene/two-dimensional metallic carbide crystalline vertical heterojunction structure material and preparation method thereof |
CN107808767A (en) * | 2017-10-10 | 2018-03-16 | 西安交通大学 | One kind is based on the liquid infusion method enhancing ferromagnetic method of single-layer molybdenum disulfide film |
CN109824043A (en) * | 2017-11-23 | 2019-05-31 | 中国科学院金属研究所 | The method for being bubbled transfer graphene speed is improved by regulation transfer medium layer flexibility |
US11721781B2 (en) | 2017-11-23 | 2023-08-08 | Samsung Electronics Co., Ltd. | Avalanche photodetectors and image sensors including the same |
US11417790B2 (en) | 2017-11-23 | 2022-08-16 | Samsung Electronics Co., Ltd. | Avalanche photodetectors and image sensors including the same |
CN109824043B (en) * | 2017-11-23 | 2022-01-14 | 中国科学院金属研究所 | Method for improving speed of bubbling transfer of graphene by regulating flexibility of transfer medium layer |
CN108176393A (en) * | 2017-12-27 | 2018-06-19 | 肇庆市华师大光电产业研究院 | A kind of orderly, high density Ag-Al2O3-MoS2The preparation method of nanostructured |
CN108899423A (en) * | 2018-06-28 | 2018-11-27 | 上海电力学院 | A kind of efficient two-dimensional superlattice heterojunction photovoltaic device and its preparation |
CN108899423B (en) * | 2018-06-28 | 2022-06-21 | 上海电力学院 | Efficient two-dimensional superlattice heterojunction photovoltaic device and preparation thereof |
CN110444622A (en) * | 2019-06-26 | 2019-11-12 | 北京铂阳顶荣光伏科技有限公司 | The preparation method of thin-film solar cells Window layer |
CN110592658A (en) * | 2019-09-04 | 2019-12-20 | 复旦大学 | Preparation method for realizing surface epitaxial growth of metal organic framework by matching two-dimensional material template with lattice symmetry |
CN110729297A (en) * | 2019-10-24 | 2020-01-24 | 北京科技大学 | Graphite alkyne and molybdenum disulfide combined nonvolatile multilevel photoelectric memory and preparation |
CN110729297B (en) * | 2019-10-24 | 2022-04-15 | 北京科技大学 | Graphite alkyne and molybdenum disulfide combined nonvolatile multilevel photoelectric memory and preparation |
CN111025690B (en) * | 2019-12-13 | 2022-12-23 | 国家纳米科学中心 | Graphene plasmon device for all-optical modulation and preparation method thereof |
CN111025690A (en) * | 2019-12-13 | 2020-04-17 | 国家纳米科学中心 | Graphene plasmon device for all-optical modulation and preparation method thereof |
CN111244222A (en) * | 2020-01-20 | 2020-06-05 | 中国科学院半导体研究所 | Hexagonal boron nitride ultraviolet light detector and preparation method thereof |
CN111244222B (en) * | 2020-01-20 | 2022-05-27 | 中国科学院半导体研究所 | Hexagonal boron nitride ultraviolet light detector and preparation method thereof |
CN111235601B (en) * | 2020-03-19 | 2021-04-20 | 国家纳米科学中心 | Composite film, electro-catalytic hydrogen evolution device, and preparation method and application thereof |
CN111235601A (en) * | 2020-03-19 | 2020-06-05 | 国家纳米科学中心 | Composite film, electro-catalytic hydrogen evolution device, and preparation method and application thereof |
CN111485212A (en) * | 2020-06-04 | 2020-08-04 | 兰州文理学院 | Preparation method of molybdenum disulfide-carbon multilayer film with sub-10-nanometer bionic structure |
CN111889112A (en) * | 2020-08-04 | 2020-11-06 | 杭州紫芯光电有限公司 | MoS2Preparation method of/Graphene two-dimensional material heterojunction visible-light-driven photocatalyst |
CN112281137A (en) * | 2020-09-15 | 2021-01-29 | 电子科技大学 | Method for regulating and controlling number of layers of molybdenum disulfide in graphene/molybdenum disulfide heterojunction |
CN112320788A (en) * | 2020-09-28 | 2021-02-05 | 中国电子科技集团公司第十三研究所 | Preparation method of large-size two-dimensional material heterostructure |
CN113097331A (en) * | 2021-02-24 | 2021-07-09 | 重庆科技学院 | Infrared detector based on graphene and quantum dots |
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