CN106381523A - Vertical hydride gas phase epitaxial growth system - Google Patents
Vertical hydride gas phase epitaxial growth system Download PDFInfo
- Publication number
- CN106381523A CN106381523A CN201610810916.2A CN201610810916A CN106381523A CN 106381523 A CN106381523 A CN 106381523A CN 201610810916 A CN201610810916 A CN 201610810916A CN 106381523 A CN106381523 A CN 106381523A
- Authority
- CN
- China
- Prior art keywords
- gas
- cavity
- reaction
- vertical
- phase epitaxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000012010 growth Effects 0.000 title claims abstract description 51
- 150000004678 hydrides Chemical class 0.000 title abstract description 6
- 239000007789 gas Substances 0.000 claims abstract description 75
- 238000006243 chemical reaction Methods 0.000 claims abstract description 47
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 23
- 239000010439 graphite Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 25
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 20
- 229910021529 ammonia Inorganic materials 0.000 claims description 9
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 5
- 230000009977 dual effect Effects 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000005674 electromagnetic induction Effects 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 abstract 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000012071 phase Substances 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000005923 long-lasting effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 235000021148 salty food Nutrition 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a vertical hydride gas phase epitaxial growth system, which comprises a reaction cavity, a graphite support, an epitaxial growth substrate, a vacuum device and a heating system, wherein the graphite support is arranged in the growth region of the reaction cavity. The vertical hydride gas phase epitaxial growth system is characterized in that the reaction cavity is of a vertical structure; the height of the growth region in the reaction cavity is 1 to 10cm; the reaction cavity consists of a cavity pipe and a plurality of gas catheters; parts, positioned at an upper part inlet of the cavity pipes, of gas catheters of reaction source gas and loaded gas downward extend, and are used for conveying reaction gas to the epitaxial growth substrate position on the graphite support in the growth region; a suck-in opening of the vacuum device is connected with an outlet of the reaction cavity, so that 0.1 to 1 barometric pressure is maintained in the reaction cavity; gas inlet gas catheters of 2 to 3 kinds of reaction source gas in the cavity use non-coaxial structures and are distributed at the two sides of the center axial line of the cavity pipe.
Description
Technical field
The present invention relates to hydride gas-phase epitaxy HVPE growing system, for semi-conducting materials such as growths such as GaN base material,
For a kind of vertical hydride vapor phase epitaxy growth system.
Background technology
III-V nitride material (also known as GaN base material) based on GaN and InGaN, AlGaN alloy material is near
In the past few years valued novel semiconductor material again in the world.
The growth of GaN base material has a variety of methods, such as gas phase epitaxy of metal organic compound (MOCVD), High Temperature High Pressure synthesis
Body GaN single crystal, molecular beam epitaxy (MBE), sublimed method and hydride gas-phase epitaxy (HVPE) etc..Due to GaN base material itself
The restriction of physical property, the growth of GaN body monocrystalline has very big difficulty, not yet practical.Hydride gas-phase epitaxy is due to tool
There are high rate of growth and laterally-longitudinal extension ratio, can be used for isoepitaxial growth Free-standing GaN substrate, cause and widely pay attention to
And research.
The restriction being transported etc. due to traditional horizontal HVPE internal system structure, air-flow, large area (>2 inches) GaN base material
The uniformity of growth remains a need for further Improvement.In vertical HVPE growing system, because reaction cavity can be designed to
Axisymmetric, the transport system of gas is easier more than horizontal system and evenly, finally grows the material thickness obtaining
Evenly.Update vertical HVPE growing system significant for the growth of GaN base material.In vertical HVPE system
In, due to the pre-reaction of ammonia and GaCl, meeting blocking pipeline, cause the termination that GaCl reacting gas transports, and hinder reaction
Carry out further.The vertical HVPE system of present invention design proposes inventive process for the problems referred to above, due to holding
Reforwarding row, in addition to basic application, can be exclusively used in the long-time growth of Centimeter Level large scale GaN body monocrystal material.
Content of the invention
The technical problem to be solved in the present invention is：Improve existing HVPE growing system, high-volume can efficiently produce tool
There is the semiconductor film material of excellent homogeneity；Centimeter Level large scale GaN body monocrystal material can be carried out long lasting for operation
Growth.
The technical scheme is that：A kind of vertical hydride vapor phase epitaxy growth system, props up including reaction cavity, graphite
Support, epitaxial growth substrate, vacuum equipment and heating system, graphite rest is arranged on the vitellarium of reaction cavity, it is characterized in that anti-
Cavity is answered to be vertical structure, the high 1～10cm in vitellarium, especially 2～5cm in reaction cavity, reaction cavity is by cavity pipe and many
Gas conduit composition, the gas conduit of reaction source gas and supporting gas is located at the upper entrance part of cavity pipe to downward
Stretch, for delivering to reacting gas at the epitaxial growth substrate on the graphite rest of vitellarium, the suction inlet of vacuum equipment is reversed
Answer cavity one outlet, make to keep 0.1-1 atmospheric pressure in reaction cavity；2-3 kind (main) reaction source gas air inlet in cavity
Gas conduit adopts non-coaxial structure distribution in the central axis both sides of cavity pipe, and can be centrosymmetric.
The gas conduit mouth of reaction source gas is less than the gas conduit mouth of supporting gas.
Rotate to ensure the thickness evenness of epitaxial semiconductor material by the epitaxial growth substrate on graphite rest.
Further, different reacting gas passes through different gas conduit conveying, dominant response source gas ammonia and chlorine
Change gallium and be transported to above substrate using non-coaxial structure, horizontal plane centrosymmetry mode, (two kinds of main source gas ammonias and GaCl
Being distributed in vertical chamber central axle both sides in inside cavity outlet is in horizontal plane centrosymmetry).
Graphite rest rotates around longitudinal center axis, 0～1000 rev/min of rotating speed.
Outlet level interval D of reaction source gas ammonia and gallium chloride gas conduit, D 1-150mm.
Heating system adopts dual temperature area or three-temperature-zone mode, and mode of heating is resistance heating or radio frequency heating；Using radio frequency
During heating it is：Reaction cavity is externally provided with graphite bush, and graphite bush is arranged on the induction coil of superaudio electromagnetic induction heater
In, graphite sleeve external sheath heat conduction non-flammable insulating barrier, it is placed in inert gas environment.
Further, different reacting gas passes through different gas conduit conveyings.Two kinds of main source gas ammonias and
It is in horizontal plane centrosymmetry that GaCl is distributed in vertical chamber central axle both sides in inside cavity outlet, to prevent two kinds of gases mutual
Diffusion generates GaN blocking and each exports, and maximum benefit can be prevented from causing in GaCl exit because what reaction in advance caused
GaN deposition, block pipeline thus degrowth speed even terminates growing.Using the design of this non-axis symmetry, can increase and hold
Continuous growth time, to dozens or even hundreds of hour, may finally make sample grown arrive the thickness of millimeter or even centimetres.
Beneficial effect：Dominant response source proposed by the present invention gas piping nonaxisymmetric structure, can effectively prevent pre-
React cause deposition, blocking, improve HVPE system the continued propagation time, obtain naturally do not exist at present, conventional method no
The GaN body monocrystal material of method growth.This is main areas of application of the invention.The present invention proposes outside a kind of vertical hydrogenation thing gas phase
Prolong the system structure of (HVPE) growth apparatus, to realize on a large scale should of the semiconductor film materials such as GaN base backing material growth
With.The growth of the GaN substrate material that the achievable monolithic of the present invention is 6,72.
Brief description
Fig. 1 is the present invention vertical HVPE growing system reaction chamber internal gas transport structure schematic diagram it is shown that reaction chamber
The nonaxisymmetric structure of dominant response source gas ammonia and gallium chloride in body.
The analog result of GaN deposition rate distribution in Fig. 2 embodiment, A, B, C, D, E correspond to the different speeds of rotation.This
In secondary embodiment, optimal speed of rotation 70-90 rev/min (C, D scheme), is coincide with experimental result.
6 GaN substrate samples and uniformity in Fig. 3 embodiment.
Specific embodiment
Reaction cavity of the present invention is vertical structure, is made up of cavity pipe and branched gas conduit, and gas conduit is located at cavity
Pipe entrance part, for reacting gas is delivered at the epitaxial growth substrate of vitellarium, heating system adopt resistance furnace or
RF heating. generally dual temperature plot structure, it is divided into metal source and vitellarium.HCl and source metal reaction, generation
Gaseous product enters vitellarium, reacts in substrate surface and NH3 mixing, forms GaN.Tail gas and reaction dust pass through pumping
System is extracted out.Metal source temperature is from 500-1000 degree Celsius (generally 850-900 degree Celsius of temperature during growth GaN), growth
Area's temperature is from 450-1100 degree Celsius (generally 1000-1100 degree Celsius of temperature during growth GaN).The gas of carrier gas conduit of nitrogen
It is distributed around.The bottom of cavity pipe is provided with gas discharge outlet outlet, and that is, the bottom of vacuum equipment connection cavity pipe is provided with
Gas conduit.
Highly in 10 cm range, substrate maximum gauge is 160mm to vitellarium (axial flat-temperature zone) of the present invention.
The present invention adopts different source metal, gallium, indium, aluminum, magnesium etc., and each source metal has independent gas to lead
Pipe conveys.Vitellarium graphite rest horizontal positioned, can rotate around rest centrage, rotating speed, can from 0～1000 rev/min
To improve the uniformity of GaN film.Epitaxial growth substrate can just be placed on graphite can also adopt using hang upside down mode
Mode on rest, reacting gas air inlet can be in the way of using upwardly or downwardly transporting, with backing material modes of emplacement
Different and different.
In cavity, two kinds of main source gases adopt nonaxisymmetric structure, it is to avoid the response speed that mutually pre-reaction causes reduces
Even stop.Heating system of the present invention adopts dual temperature area or three-temperature-zone mode, and mode of heating is resistance heating or radio frequency heating.Adopt
During with radio frequency heating it is：Reaction cavity is externally provided with graphite bush, and graphite bush is arranged on the sense of superaudio electromagnetic induction heater
Answer in coil, graphite sleeve external sheath heat conduction non-flammable insulating barrier, it is placed in inert gas environment.
Reaction cavity of the present invention adopts quartzy tubular construction, as shown in Figure 1.Ammonia and gallium chloride gas outlet adopt non-axle pair
Claim structure, horizontal plane centrosymmetry is in axis both sides.Reaction cavity pressure is maintained at 0.1-1 atmospheric pressure.In ammonia and GaCl
Between gas, reaction cavity central axis direction adopts carrier gas to separate, anti-to reduce the space that two gas pre-mixed conjunctions cause further
Should, this reaction in advance causes source gas phase counterdiffusion, and forms GaN in GaCl line portals deposition, can reduce GaCl and be transported to
The concentration of substrate is thus reduce growth rate.Also this mouth of pipe can be blocked in the GaCl long-pending GaN that is fond of salty food, cause on the substrate of vitellarium
The termination of GaN growth.Carrier gas adopts nitrogen or argon or hydrogen and hydrogen and nitrogen mixed gas.
The substrate speed of rotation of the present invention is from 0-1000 rev/min.Hydrodynamic analogy research shows, turns in the present embodiment
When speed is for 70-90 rev/min, uniform GaN thickness distribution can be obtained.Analog result is as shown in Figure 2.
One of the technology of the present invention embodiment, Sapphire Substrate is just placing growth GaN thick film in vertical HVPE growing system,
Reacting gas is transported to above substrate down from above.Including following several steps：
1st, the cleaning of Sapphire Substrate and process.
2nd, after Sapphire Substrate is put in reactor, it is to slowly warm up to growth temperature, you can start to grow GaN.Growth temperature
1000～1100 DEG C of degree.Gas flow is respectively：NH3Flow is 2000sccm, NH3Carrier gas flux is 1000sccm, and HCl flow is
50sccm, HCl carrier gas flux is 500sccm, and total nitrogen is 15000sccm.In this example between ammonia and gallium chloride outlet level
Away from for D=100mm.Sample is 2 inches of 6 Sapphire Substrate.1 atmospheric pressure of reaction cavity pressure.
3rd, after growing into the suitable time, it is slowly dropped to room temperature according to certain speed, take out sample.Raw in the present embodiment
Long-time about 10 minutes, growth rate was micro- m/h of 120-150, and thickness of sample is 20 microns.Thickness of sample is uniform
Property as shown in figure 3, between 6 sample strip thickness difference in the range of 4%, show good thickness evenness.
The main source gas non-axisymmetric distribution structure of gas conduit employing of the present invention simultaneously adopts separate gas and rotation etc.,
Ensure that vertical HVPE system long lasting for operation, obtain grade large scale GaN body monocrystal material.
Claims (9)
1. a kind of vertical hydride vapor phase epitaxy growth system, is characterized in that including reaction cavity, graphite rest, epitaxial growth lining
Bottom, vacuum equipment and heating system, graphite rest is arranged on the vitellarium of reaction cavity, it is characterized in that reaction cavity is vertical knot
Structure, height 1～10cm in vitellarium in reaction cavity, reaction cavity is made up of cavity pipe and branched gas conduit, reaction source gas
The upper entrance part being located at cavity pipe with the gas conduit of supporting gas extends downwardly, for reacting gas is delivered to vitellarium
Graphite rest on epitaxial growth substrate at, the suction inlet of vacuum equipment connects reaction cavity one outlet, makes in reaction cavity
Keep 0.1-1 atmospheric pressure；In cavity, 2-3 kind reaction source gas air inlet gas conduit adopts non-coaxial structure distribution in cavity pipe
Central axis both sides.
2. vertical hydride vapor phase epitaxy growth system according to claim 1, is characterized in that reaction source gas gas is led
The mouth of pipe is less than the gas conduit mouth of supporting gas.
3. vertical hydride vapor phase epitaxy growth system according to claim 1, is characterized in that by graphite rest
Epitaxial growth substrate rotates and to ensure the thickness evenness of epitaxial semiconductor material.
4. vertical hydride vapor phase epitaxy growth system according to claim 1, is characterized in that different reacting gas lead to
Cross different gas conduit conveyings, dominant response source gas ammonia and gallium chloride adopt non-coaxial structure, horizontal plane centrosymmetry
Mode is transported to above substrate.
5. vertical hydride vapor phase epitaxy growth system according to claim 1, is characterized in that graphite rest in longitudinal direction
Heart axis rotates, 0～1000 rev/min of rotating speed.
6. vertical hydride vapor phase epitaxy growth system according to claim 1, it is characterized in that reaction source gas ammonia and
Outlet level interval D of gallium chloride gas conduit, D takes 1-150mm.
7. vertical hydride vapor phase epitaxy growth system according to claim 1, is characterized in that heating system adopts dual temperature
Area or three-temperature-zone mode, mode of heating is resistance heating or radio frequency heating；During using radio frequency heating it is：Reaction cavity is externally provided with stone
Black sleeve pipe, graphite bush is arranged in the induction coil of superaudio electromagnetic induction heater, and graphite sleeve external sheath heat conduction is non-
Inflammable insulating barrier, is placed in inert gas environment.
8. vertical hydride vapor phase epitaxy growth system according to claim 1, is characterized in that the bottom of cavity pipe is provided with
Gas discharge outlet outlet, the gas conduit that is, bottom of vacuum equipment connection cavity pipe is provided with.
9. vertical hydride vapor phase epitaxy growth system according to claim 1, is characterized in that vitellarium height 2～5cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610810916.2A CN106381523A (en) | 2016-09-08 | 2016-09-08 | Vertical hydride gas phase epitaxial growth system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610810916.2A CN106381523A (en) | 2016-09-08 | 2016-09-08 | Vertical hydride gas phase epitaxial growth system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106381523A true CN106381523A (en) | 2017-02-08 |
Family
ID=57935433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610810916.2A Pending CN106381523A (en) | 2016-09-08 | 2016-09-08 | Vertical hydride gas phase epitaxial growth system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106381523A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114197037A (en) * | 2021-12-17 | 2022-03-18 | 东莞市中镓半导体科技有限公司 | Vapor phase epitaxial growth device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6476998A (en) * | 1987-09-17 | 1989-03-23 | Sumitomo Electric Industries | Vapor phase growth apparatus for compound semiconductor |
| CN1384533A (en) * | 2002-01-09 | 2002-12-11 | 南京大学 | Homogeneity improving method and device for hydride gaseous epitaxially groven GaN material |
| CN101006548A (en) * | 2004-06-30 | 2007-07-25 | 王望南 | Deposition technique for producing high quality compound semiconductor materials |
| CN101281864B (en) * | 2008-01-11 | 2010-06-02 | 南京大学 | Apparatus for improving hydride vapour phase epitaxy growth GaN material homogeneity |
| CN102465333A (en) * | 2010-11-18 | 2012-05-23 | 南京大学 | Vertical hydride vapor phase epitaxy growth system |
| CN105154969A (en) * | 2015-10-19 | 2015-12-16 | 中国电子科技集团公司第四十六研究所 | Single-crystal furnace cavity for improving uniformity of nitride grown by HVPE method |
-
2016
- 2016-09-08 CN CN201610810916.2A patent/CN106381523A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6476998A (en) * | 1987-09-17 | 1989-03-23 | Sumitomo Electric Industries | Vapor phase growth apparatus for compound semiconductor |
| CN1384533A (en) * | 2002-01-09 | 2002-12-11 | 南京大学 | Homogeneity improving method and device for hydride gaseous epitaxially groven GaN material |
| CN101006548A (en) * | 2004-06-30 | 2007-07-25 | 王望南 | Deposition technique for producing high quality compound semiconductor materials |
| CN101281864B (en) * | 2008-01-11 | 2010-06-02 | 南京大学 | Apparatus for improving hydride vapour phase epitaxy growth GaN material homogeneity |
| CN102465333A (en) * | 2010-11-18 | 2012-05-23 | 南京大学 | Vertical hydride vapor phase epitaxy growth system |
| CN105154969A (en) * | 2015-10-19 | 2015-12-16 | 中国电子科技集团公司第四十六研究所 | Single-crystal furnace cavity for improving uniformity of nitride grown by HVPE method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114197037A (en) * | 2021-12-17 | 2022-03-18 | 东莞市中镓半导体科技有限公司 | Vapor phase epitaxial growth device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102465333B (en) | Vertical hydride vapor phase epitaxy growth system | |
| TW544775B (en) | Chemical vapor deposition apparatus and chemical vapor deposition method | |
| TWI499085B (en) | Growth of group iii-v material layers by spatially confined epitaxy | |
| US10907273B2 (en) | Growing epitaxial 3C-SiC on single-crystal silicon | |
| CN104067374B (en) | Multiple complementary gas distribution assemblies | |
| US8765501B2 (en) | Formation of group III-V material layers on patterned substrates | |
| CN103238203B (en) | For utilizing the template layer of the improvement of HVPE technique heteroepitaxial deposition III-nitride semiconductor material | |
| CN109825875A (en) | Carrier gas auxiliary PVT method prepares the device and method of wide bandgap semiconductor monocrystal material | |
| CN102465337B (en) | Multi-piece multi-source horizontal hydride vapor phase epitaxy growth system | |
| CN106381523A (en) | Vertical hydride gas phase epitaxial growth system | |
| JP2789861B2 (en) | Organometallic molecular beam epitaxial growth method | |
| US20110263111A1 (en) | Group iii-nitride n-type doping | |
| CN100428410C (en) | Homogeneity improving method and device for hydride gaseous epitaxially groven GaN material | |
| CN107794567B (en) | Method for manufacturing group III nitride semiconductor | |
| CN101383279B (en) | HVPE reactor for preparing nitride semiconductor substrate | |
| CN112239889B (en) | Method for slowing down gallium nitride deposited on tube wall in halide vapor phase epitaxial growth system and halide vapor phase epitaxial growth system | |
| CN216639708U (en) | HVPE device sharing metal source | |
| CN106328772B (en) | A kind of preparation method of high quality nitride epitaxial piece | |
| CN108118390A (en) | A kind of method and apparatus for improving III- nitride material doping efficiencies in HVPE | |
| JP4590636B2 (en) | Method for producing aluminum nitride single crystal | |
| CN212770941U (en) | Metal organic compound vapor deposition system | |
| KR100975835B1 (en) | Manufacturing Method of Nano-Structures at Low Temperature Using Indium | |
| CN105154969A (en) | Single-crystal furnace cavity for improving uniformity of nitride grown by HVPE method | |
| CN101475150A (en) | Apparatus for improving HVPE transmission airflow homogeneity | |
| JP2010111556A (en) | GROWTH METHOD OF GaN CRYSTAL |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170208 |
|
| RJ01 | Rejection of invention patent application after publication |