CN106378507B - The welding method of tungsten titanium target material component - Google Patents
The welding method of tungsten titanium target material component Download PDFInfo
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- CN106378507B CN106378507B CN201510459904.5A CN201510459904A CN106378507B CN 106378507 B CN106378507 B CN 106378507B CN 201510459904 A CN201510459904 A CN 201510459904A CN 106378507 B CN106378507 B CN 106378507B
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- solder
- target material
- titanium target
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- tungsten titanium
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/08—Soldering by means of dipping in molten solder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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- Arc Welding In General (AREA)
Abstract
A kind of welding method of tungsten titanium target material component, comprising: tungsten titanium target material and backboard are provided;The solder of the first amount is put into the welding surface of the tungsten titanium target material and carries out the first infiltration processing;The solder of the second amount is put into the welding surface of the backboard and carries out the second infiltration processing;After second infiltration processing, the solder of the welding surface addition third amount of Xiang Suoshu backboard;After the solder for adding the third amount to the welding surface of the backboard, and after first infiltration processing, the welding surface of the tungsten titanium target material is fastened on the welding surface of the backboard.The welding method can be improved the weld strength of tungsten titanium target material component.
Description
Technical field
The present invention relates to target manufacturing field more particularly to a kind of welding methods of tungsten titanium target material component.
Background technique
Physical vapour deposition (PVD) (Physical Vapor Deposition, abbreviation PVD) is widely used in optics, electricity
In the high-end industry such as son, information, such as the storage of integrated circuit, liquid crystal display, industrial glass, camera gun, information, ship
The industries such as oceangoing ship, chemical industry.Alloy target material used in physical vapour deposition (PVD) is then in the manufacturing processes such as integrated circuit, liquid crystal display
One of most important raw material.With the continuous development of physical gas phase deposition technology, to alloy target material demand and quality requirement
Increasingly improve.Wherein, the weld strength of alloy target material component is to influence an important factor for alloy target material uses.
Tungsten titanium target material is widely used in the fields such as semiconductor chip manufacture and solar film battery manufacture.Tungsten titanium target material makes
It with preceding, generally require and welds together high-purity target with backboard, form tungsten titanium target material component.Currently, tungsten titanium target material component
Welding manner takes soldering substantially, and solder is usually using indium.
However, the tungsten titanium target material component that makes of the welding method of existing tungsten titanium target material component is asked there are weld strength is low
Topic.
Summary of the invention
Problems solved by the invention is to provide a kind of welding method of tungsten titanium target material component, to improve tungsten titanium target material component
Weld strength.
To solve the above problems, the present invention provides a kind of welding method of tungsten titanium target material component, comprising:
Tungsten titanium target material and backboard are provided;
The solder of the first amount is put into the welding surface of the tungsten titanium target material and carries out the first infiltration processing;
The solder of the second amount is put into the welding surface of the backboard and carries out the second infiltration processing;
After second infiltration processing, the solder of the welding surface addition third amount of Xiang Suoshu backboard;
It, will after the solder for adding the third amount to the welding surface of the backboard, and after first infiltration processing
The welding surface of the tungsten titanium target material is fastened on the welding surface of the backboard.
Optionally, the solder of first amount is tin solder or tin-silver-copper solder;The solder of second amount is soldering
Material or tin-silver-copper solder;The solder of the third amount is tin solder or tin-silver-copper solder.
Optionally, the solder of first amount is 30g/cm2~40g/cm2;The solder of second amount is 30g/cm2~
40g/cm2;The solder of the third amount is 200g/cm2~800g/cm2。
Optionally, the solder of the third amount of addition is molten condition.
Optionally, before the welding surface of the tungsten titanium target material is put into the solder of the first amount and carries out the first infiltration processing, also
It include: that blasting treatment is carried out to the welding surface of the tungsten titanium target material, the blasting treatment makes the roughness of the welding surface reach 3
μm~5 μm.
Optionally, the first infiltration processing includes: the heating tungsten titanium target material, and before the heating or the heat adds
In the process, it is put into the solder of first amount in the welding surface of the tungsten titanium target material, and the solder for being heated to first amount is molten
Change, ultrasonication or mechanical polish-brush are then carried out between the solder to first amount and the welding surface of the tungsten titanium target material
Processing;The second infiltration processing includes: the heating backboard, before the heating or during the heat adds, described
The welding surface of backboard is put into the solder of second amount, and is heated to the solder fusing of second amount, then to described second
Ultrasonication or mechanical polish-brush processing are carried out between the solder of amount and the welding surface of the backboard.
Optionally, the solder of first amount is heated to 230 DEG C~260 DEG C, the solder of second amount is heated to
230 DEG C~260 DEG C.
Optionally, when the welding surface of the tungsten titanium target material being fastened on the welding surface of the backboard, in the solder week
Side topping up or nitrogen are protected.
Optionally, after the welding surface of the tungsten titanium target material is fastened on the welding surface of the backboard, to tungsten titanium target material
It pressurizes with backboard, and in pressure process, the tungsten titanium target material and backboard is cooled to 150 DEG C~170 DEG C.
Optionally, after the tungsten titanium target material and backboard being cooled to 150 DEG C~170 DEG C, to the tungsten titanium target material and backboard
Carry out opposite direction pressurized treatments.
Compared with prior art, technical solution of the present invention has the advantage that
In technical solution of the present invention, the solder of the first amount is put into the welding surface of tungsten titanium target material and is carried out at the first infiltration
Reason is put into the solder of the second amount in the welding surface of backboard and carries out the second infiltration processing, after the second infiltration processing, to backboard
Welding surface addition third amount solder, to the welding surface of backboard addition third amount solder after, and the first infiltration handle
Afterwards, the welding surface of tungsten titanium target material is fastened on the welding surface of backboard.Due to successively using the first infiltration processing and the second infiltration
Processing infiltrates corresponding solder respectively with tungsten titanium target material and backboard, then the weldering to the welding surface of backboard addition third amount
Material, then snaps together tungsten titanium target material and backboard, at this point, the solder of the first amount sufficiently infiltrated and the solder of the second amount and
Solder positioned at the third amount between them is sufficiently fused together, and tungsten titanium target material and backboard are firmly welded together, thus
So that finally obtained tungsten titanium target material components welding intensity improves.
Further, right before the welding surface of the tungsten titanium target material is put into the solder of the first amount and carries out the first infiltration processing
The welding surface of tungsten titanium target material carries out blasting treatment, increases the surface area and roughness of tungsten titanium target material solder side, to increase subsequent
The immersional wetting of solder and tungsten titanium target material solder side further increases the weld strength of final tungsten titanium target material component.
Detailed description of the invention
Fig. 1 to Fig. 3 is that each step counter structure of welding method of tungsten titanium target material component provided by the embodiment of the present invention shows
It is intended to.
Specific embodiment
As described in background, the weld strength of existing welding method is lower.
For this purpose, the present invention provides a kind of welding method of new tungsten titanium target material component, the system of tungsten titanium target material component can be made
Make process stabilizing, welding quality is guaranteed, improves the weld strength of tungsten titanium target material component.
In addition, the present invention welds tungsten titanium target material and backboard using tin solder, the production of tungsten titanium target material component can be improved
Product weld strength improves tungsten titanium target material subassembly product and uses temperature.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
The embodiment of the present invention provides a kind of welding method of tungsten titanium target material component, including step 1 is to step 6, incorporated by reference to
Referring to figs. 1 to Fig. 3.
Step 1, referring to FIG. 1, providing tungsten titanium target material 101 and backboard 102.
Tungsten titanium target material 101 can be the tungsten-titanium alloy (target) of high-purity or ultra-high purity, and the tungsten titanium of tungsten titanium target material 101 closes
Golden purity can be greater than 99.9%, for example, 3N5 (99.95%), 4N5 (99.995%) or 5N (99.999%).Wherein, tungsten
Titanium alloy can be 90% tungsten and 10% titanium constitute.The shape of tungsten titanium target material 101 can be according to application environment and sputtering
The actual requirement of equipment etc. designs, such as is specifically as follows the flattened cylindrical bodily form, flat straight cuboid or other shapes.This reality
Example is applied to be illustrated by taking the flattened cylindrical bodily form as an example.
The material of backboard 102 can be copper or acid bronze alloy, can also be aluminium or acieral.The shape of backboard 102 can be with
It is same or similar with the shape of tungsten titanium target material 101.The shape of the material backboard 102 of backboard 102 can also be according to application environment
It is designed with the actual requirement of sputtering equipment.Generally with fluted (not shown), the groove is used for and tungsten titanium target backboard 102
Material 101 welds, that is to say, that the bottom surface of groove can be used as the welding surface of backboard 102.Turning can be used in the groove
Technology is formed, this technology being well known to those skilled in the art, details are not described herein.
Step 2 carries out blasting treatment to the welding surface of tungsten titanium target material 101.The welding surface of tungsten titanium target material 101 is tungsten in Fig. 1
101 lower surface of titanium target material, does not mark.
In the present embodiment, the blasting treatment can increase by the surface area and roughness of 101 welding surface of tungsten titanium target material, favorably
In subsequent corresponding solder welding surface infiltration (corresponding impregnation process refer to this specification subsequent content), to improve final
The weld strength of tungsten titanium target material component.
It should be noted that can also also carry out the blasting treatment to backboard 102 in other embodiments.But due to
The material of backboard 102 limits, when it is weaker to the help of subsequent immersional wetting to carry out blasting treatment to it, while increasing technique
Between.
In the present embodiment, blasting treatment makes the roughness of welding surface reach 3 μm~5 μm.If roughness is too small, less than 3 μ
M, then the surface area of welding surface reduces, and the wellability of subsequent solder and corresponding weld strength can decline, and higher welding is not achieved
The requirement of intensity.If roughness is more than 5 μm, in sandblasting procedures, the blasting pressure that the increase of roughness needs increases, can be right
Tungsten titanium target material 101 causes stronger impact, since tungsten titanium target material 101 is hard and crisp, when the blasting treatment, be easy to cause tungsten
101 side of titanium target material is burst apart, and tungsten titanium target material 101 is caused to be damaged.
Step 3 is gone forward side by side in the solder (solder of the first amount is not shown) that the welding surface of tungsten titanium target material 101 is put into the first amount
The first infiltration of row processing.
In the present embodiment, the solder of first amount is tin solder or tin-silver-copper solder.The tin-silver-copper solder can be with
For the tin-silver-copper solder of the national standard trade mark, wherein the mass percentage of silver can be 2%~4%, the quality percentage of copper contains
Amount can be 0.5%~1%.
In the present embodiment, the solder of first amount can be 30g/cm2~40g/cm2.The solder purpose of first amount
It is when guaranteeing welding, the welding surface of tungsten titanium target material 101 has sufficient infiltration solder and flow solders, and (flow solders refer to infiltration
Remaining solder afterwards), to ensure solder bond rate and bond strength.Therefore, the solder of first amount is in 30g/cm2~40g/
cm2In the range of, it can sufficiently realize above-mentioned purpose.
The thermal expansion coefficient of tungsten titanium material is smaller, and only 6 × 10-6/ K or so, and the backboard 102 welded is generally aluminium alloy
Or copper alloy, the thermal expansion coefficient of aluminium alloy are 23 × 10-6/ K or so, the thermal expansion coefficient of copper alloy are 19 × 10-6/ K is left
The right side, compared with tungsten titanium, difference is all very big.When thermal expansion coefficient, which differs biggish two kinds of materials, to be brazed, usually utilize
High-temperature heating is welded.This method will generate very big stress while cooling, cause deformation of products.In addition tungsten titanium material
It is hard and crisp, therefore the leveling of entire tungsten titanium target material component is handled after deforming highly difficult.And the fusing point lower (157 of indium solder
DEG C), and it is soft, so the deformation after welding in cooling procedure can be alleviated, also it is conducive to the leveling after welding, it is therefore, existing
In method, indium welding tungsten titanium target material 101 and backboard 102 are generallyd use.
But it is this by indium solder welded in the way of there is some distinct disadvantages: 1. indium solder melt point is low, weldering
The use temperature of tungsten titanium target material component after connecing is limited, usually within 140 DEG C;2. indium solder expensive, welding cost
It is relatively high;3. indium solder weld strength is not high, generally only 5MPa~8MPa.
For disadvantage mentioned above, inventors have found that tin solder (or tin-silver-copper solder) substitution indium solder can be used.Soldering
The fusing point of material is generally at 230 DEG C or more, and weld strength can reach 30MPa~50MPa, can be obviously improved making for titanium target material assembly
Use condition.
However, but such tin solder (or tin-silver-copper solder) quality it is harder, it is main that there is following two when welding
Obstacle: 1. solder hardness is high, and stress is big when cooling, and mutability, Shape correction is more difficult after denaturation, and corresponding Shape correction
Welding quality is also easy to have an impact;2. the infiltration of tungsten titanium target material 101 and backboard 102 and tin solder (or tin-silver-copper solder)
Property is relatively poor.
For this purpose, being carried out using tin solder (or tin-silver-copper solder) to tungsten titanium target material 101 and backboard 102 in the present embodiment
Welding.And two infiltration treatment processes are used accordingly, improving tungsten titanium target material 101 and backboard 102, (or tin is silver-colored with tin solder
Spelter solder) immersional wetting, specifically please continue to refer to this specification subsequent content.
For existing used indium solder, the tin solder or tin-silver-copper solder that the present embodiment uses can be mentioned
High weld strength, weld strength can reach 30MPa~50MPa, so as to be obviously improved the use condition (institute of tungsten titanium target material component
Stating use condition includes using the manipulation strength etc. being able to bear in temperature and installation process), also, tin solder or tin silver copper
Solder is cheaper than indium solder, therefore, welding cost can also be made to reduce using tin solder or tin-silver-copper solder.But soldering
Expect that the wellability of (or tin-silver-copper solder) and tungsten titanium target material 101 is poor, therefore, the present embodiment is simultaneously using first infiltration
Processing is to improve the immersional wetting between them.
First infiltration processing includes: heating tungsten titanium target material 101, before heating or heat plus during, in tungsten titanium target
The welding surface of material 101 is put into the solder of first amount, and is heated to the solder fusing of first amount, then to described first
Ultrasonication or mechanical polish-brush processing (the machinery polish-brush are carried out between the solder of amount and the welding surface of tungsten titanium target material 101
Processing can for using steel brush by fusion welding the polish-brush back and forth on corresponding welding surface, to reach corresponding effect of impregnation), until phase
Answer the infiltration of the welding surface of solder and tungsten titanium target material 101 good.The time of the first infiltration processing can be 5min~10min,
The control of time is mainly according to effect of impregnation.The welding surface solder wiped clean that can will be handled well using (square block) silica gel,
See whether that solder is infiltrated with 101 welding surface of tungsten titanium target material completely.If solder is presented in the welding surface at wiped clean
Brilliant white, then show that the welding surface infiltration of solder and tungsten titanium target material 101 is good.
In above-mentioned first infiltration treatment process, when heating tungsten titanium target material 101, the solder of first amount is heated to
230 DEG C~260 DEG C.The heating principle of this process is should to guarantee that solder can melt, caused by preventing temperature excessively high again
Solder surface oxidation, to prevent solder surface oxidation from causing subsequent failure welding.Since the fusing point of solder compositions is at 230 DEG C,
Therefore, by heating and temperature control at 230 DEG C or more, to guarantee solder fusing, meanwhile, temperature is controlled at 260 DEG C hereinafter, preventing
The oxidation of solder surface caused by temperature is excessively high.
Step 4 is gone forward side by side in the solder (solder of the second amount is not shown) that the welding surface of backboard 102 is put into second amount
Row the second infiltration processing.The welding surface of backboard 102 is a portion of 102 upper surface of Fig. 1 dorsulum, also, front
It has been noted that the bottom surface of the groove is the welding surface when backboard 102 has groove.
In the present embodiment, the solder of second amount is tin solder or tin-silver-copper solder.The tin-silver-copper solder can be with
For the tin-silver-copper solder of the national standard trade mark, wherein the mass percentage of silver can be 2%~4%, the quality percentage of copper contains
Amount can be 0.5%~1%.
In the present embodiment, the solder of second amount may be 30g/cm2~40g/cm2.The solder mesh of second amount
Be when guaranteeing welding, the welding surface of backboard 102 has adequately infiltration solder and flow solders (after the flow solders refer to infiltration
Remaining solder), to ensure solder bond rate and bond strength.Therefore, the solder of second amount is in 30g/cm2~40g/cm2
In the range of, it can sufficiently realize above-mentioned purpose.
For existing used indium solder, the tin solder or tin-silver-copper solder that the present embodiment uses can be mentioned
High weld strength, weld strength can reach 30MPa~50MPa, so as to be obviously improved the use condition (institute of tungsten titanium target material component
Stating use condition includes using the manipulation strength etc. being able to bear in temperature and installation process), also, tin solder or tin silver copper
Solder is cheaper than indium solder, therefore, welding cost can also be made to reduce using tin solder or tin-silver-copper solder.But soldering
Expect that the wellability of (or tin-silver-copper solder) and backboard 102 is also poor, therefore, the present embodiment is simultaneously using at second infiltration
Reason is to improve the immersional wetting between them.
Second infiltration processing includes: heating backboard 102, before heating or heat plus during, in the weldering of backboard 102
Junction is put into the solder of second amount, and is heated to the solder fusing of second amount, then to the solder of second amount
Ultrasonication or mechanical polish-brush processing are carried out between the welding surface of backboard 102, until the weldering of corresponding solder and backboard 102
Junction infiltration is good.The time of the second infiltration processing can be 5min~10min, and the control of time is mainly according to infiltration effect
Fruit.The welding surface solder wiped clean that can will be handled well using (square block) silica gel, seen whether solder completely with
The infiltration of 102 welding surface of backboard.If the brilliant white of solder is presented in the welding surface at wiped clean, show solder and backboard 102
Welding surface infiltration it is good.
In above-mentioned second infiltration treatment process, when heating backboard 102, the solder of second amount is heated to 230 DEG C
~260 DEG C.The heating principle of this process is should to guarantee that solder can melt, solder table caused by preventing temperature excessively high again
Face oxidation, to prevent solder surface oxidation from causing subsequent failure welding.Since the fusing point of solder compositions is at 230 DEG C, it will
Heating and temperature control is at 230 DEG C or more, to guarantee solder fusing, meanwhile, temperature is controlled at 260 DEG C hereinafter, preventing temperature mistake
The oxidation of solder surface caused by height.
Step 5, after second infiltration processing, to the solder (third of the welding surface of backboard 102 addition third amount
The solder of amount is not shown).
The solder of the third amount is tin solder or tin-silver-copper solder.The concrete composition ingredient of tin-silver-copper solder can join
Examine foregoing teachings.The solder of the third amount equally uses tin solder or tin-silver-copper solder, the weldering of reason and aforementioned first amount
Material is identical with the solder of the second amount, i.e. raising weld strength, reduces welding cost.Also, since front has used accordingly
The welding surface of the welding surface to tungsten titanium target material 101 and backboard 102 infiltrates respectively for the solder of first amount and the solder of the second amount,
Therefore, the solder of third amount be for directly with the solder of the first amount of front and the solder contact of the second amount to be welded,
Therefore, the solder of third amount does not need to be infiltrated.However, in order to keep welding effect more preferable, the solder that third amount is added it
Afterwards, it can also carry out that certain mixing processing is consistent with the solder thickness of each position, and ingredient is uniform.The mixing is handled
Ultrasonication or mechanical polish-brush processing.
In the present embodiment, the solder of the third amount can be 200g/cm2~800g/cm2.The solder of first amount and
What the solder of two amounts primarily served is immersional wetting, therefore they only need a small amount of solder can.And the third amount
Solder the purpose of be to weld together tungsten titanium target material 101 and backboard 102 as main solder, therefore, the solder of the first amount
The 10%~30% of the solder of third amount is generally only with the total amount of the solder of the second amount, that is to say, that the solder matter of third amount
Amount is usually 3.3 times to 10 times of the solder of the first amount and the solder gross mass of the second amount, and therefore, the solder of third amount can be
200g/cm2~800g/cm2.
The solder of third amount can both be launched on the welding surface of backboard 102 in a manner of solid, it is allowed slowly to melt, can also
It is more efficient using later approach to be the solder after the thawing having had been prepared for.I.e. in the present embodiment, described the of addition
The solder of three amounts is molten condition, at this point, can rapidly enter subsequent operation after the solder that third amount is added.
Step 6, with continued reference to FIG. 1, after the solder for adding the third amount to the welding surface of backboard 102, and in institute
After stating the first infiltration processing, the welding surface of tungsten titanium target material 101 is fastened on the welding surface of backboard 102.
During above-mentioned fastening, backboard 102 can be first placed on weld heating platform 200, then by tungsten titanium target material
101 welding surface is fastened on the welding surface of backboard 102.Wherein, the above-mentioned solder that second amount is added on backboard 102 and
When the solder of the third amount, backboard 102 can be placed on always on weld heating platform 200.
In the present embodiment, due to it has been mentioned hereinbefore that the solder of the third amount is added on the welding surface of backboard 102
, therefore, there is relatively large number of fusion welding on the welding surface of backboard 102 at this time, therefore, at this time by the weldering of tungsten titanium target material 101
Junction is fastened on the welding surface of backboard 102, rather than the welding surface of backboard 102 is fastened on to the welding surface of tungsten titanium target material 101
On, thus the solder drippage or transpiration of the third amount for preventing quality more.
The welding surface of tungsten titanium target material 101 is fastened on the welding surface of backboard 102 and is started, tungsten titanium target material 101 and backboard 102
Between solder solder bonds (Solder Bonding) takes place, solder bonds refer to: than base material, (base material refers to using fusing point
It is soldered material, is tungsten titanium target material 101 and backboard 102 in the present embodiment) low-melting filling metal (fills metal and is known as solder
Or solder, be tin solder or tin-silver-copper solder in the present embodiment), lower than base material fusing point and be higher than solder melt point at a temperature of
(in the present embodiment be 230 DEG C~260 DEG C), using liquid solder in base material moistened surface, sprawl and the joint filling in base material gap,
It is mutually dissolved and spreads with base material, then cool down, make solder solidification and realize the welding method of the connection between part.
In the present embodiment, when the welding surface of tungsten titanium target material 101 to be fastened on the welding surface of backboard 102, in the weldering
Expect (solder that the solder includes the solder of above-mentioned first amount, the solder of the second amount and third amount) periphery topping up or
Person's nitrogen is protected, that is, is protected in fastening interface topping up or nitrogen.Carry out topping up or
The time that person's nitrogen is protected determines according to actual conditions, such as can continue to subsequent tungsten titanium target material 101 and backboard
102 are cooled to 150 DEG C~170 DEG C or tungsten titanium target material 101 and backboard 102 is cooled to room temperature.
Referring to FIG. 1, the present embodiment provides corresponding inert gas or nitrogen using annular atmosphere protection cover 103, with
It is protected accordingly.For example, specifically high-purity argon constantly can be conveyed to corresponding welding surface by annular atmosphere protection cover 103
Gas (purity is 4N or more), prevents corresponding solder surface from generating oxide skin with maximum limitation.Wherein, argon gas is inert gas,
It is also not easy to react under high temperature, so effect is relatively good.But sometimes it is also contemplated that being substituted with nitrogen, with save the cost.
Referring to FIG. 2, the welding surface of tungsten titanium target material 101 is being fastened on the welding surface of backboard 102 in the present embodiment
Afterwards, it pressurizes to tungsten titanium target material 101 and backboard 102, and in pressure process, by tungsten titanium target material 101 and backboard 102 and welding
Heating platform 200 is cooled to 150 DEG C~170 DEG C together.The moulding pressure of above-mentioned pressure process can for 250N~500N (g with
10N/kg is calculated).For example, can using block objects 201, (block objects 201 can be counterweight, quality in the present embodiment
Can be 25kg~50kg) it is placed on tungsten titanium target material 101 to pressurize.When being cooled to 150 DEG C~170 DEG C, solder is
Solidification.Being cooled to 150 DEG C~170 DEG C is on the other hand to guarantee that there are no complete for solder on the one hand guarantee that solder has solidified
Pansclerosis still keeps certain toughness.
Referring to FIG. 3, tungsten titanium target material 101 and backboard 102 are cooled down together with weld heating platform 200 in the present embodiment
To after 150 DEG C~170 DEG C, tungsten titanium target material 101 and backboard 102 are transferred to hydraulic press shown in Fig. 3, and (moulding pressure of hydraulic press is adopted
With quality representation) on workbench 300, to carry out reversed pressurized treatments to tungsten titanium target material 101 and backboard 102.
It should be strongly noted that when tungsten titanium target material 101 is located at 102 top of backboard, in the whole welding process, tungsten titanium
The bending deformation mode of target 101 and backboard 102 all arches upward upwards always.Therefore, block in either above-mentioned welding process
In the compression aspect of shape object 201, or reversed press processes as shown in Figure 3, when tungsten titanium target material 101 is located at backboard
When 102 top, compression aspect is all to press from top to bottom.That is, pressure direction is identical during the two.But why
Second of pressurization is especially referred to as opposite direction pressurized treatments, is because only that tungsten titanium target material 101 can be made when second is pressurizeed
With 102 reversal deformation of backboard, become smooth.Therefore, the pressure of second pressurization can 100 times of first time moulding pressure with
On.
When opposite direction pressurized treatments, the hydraulic press can be the hydraulic press that amount of pressurization journey is 100 tons.Specifically reversely adding
When pressure, pressurized treatments are carried out from the opposite direction of tungsten titanium target material component strain, are pressurizeed downwards using hydraulic press formed punch 301, pressure
It is subject to and reaches tungsten titanium target material component reversal deformation 1mm~2mm.For this purpose, in view of the size of tungsten titanium target material component and backboard 102
Related with the factors such as material, the size of reversed moulding pressure is generally between 5 tons to 30 tons.
In the present embodiment, 301 diameter of hydraulic press formed punch can be between 100mm~200mm.Below hydraulic press formed punch 301
An annular cushion block 302 (or ring washer) is padded, to enable entire tungsten titanium target material component to reach corresponding reversed change
Shape.
The present embodiment reduces the deformation after cooling of tungsten titanium target material component by increasing buffer brake.Due to being to be cooled to
150 DEG C~170 DEG C carry out reversed pressurized treatments, and solder also has certain toughness at this time, therefore, the reversed pressurized treatments mistake
Journey can not influence weld strength, and can make finally to weld obtained tungsten titanium target material component more smooth.That is, by
In the opposition for being applied with tungsten titanium target material component strain, formation state, nothing can be reached after tungsten titanium target material component is cooling
Shape correction (leveling processing) need to be carried out again.And existing method usually requires to carry out Shape correction, Shape correction after cooling
The serious negative consequence such as desoldering is easily caused again.
After tungsten titanium target material component is cooled to room temperature, reversed moulding pressure is removed, measures tungsten titanium target material assembly surface plane
Degree reaches higher quality level, can continue following process within 0.3mm.
In the present embodiment, the price of used tin solder (or tin-silver-copper solder) be only indium solder price ten/
One or so, therefore welding cost can be substantially reduced.Also, tungsten titanium target material components welding intensity is increased to from 5MPa~8MPa
30MPa~50MPa is more applicable for corresponding physical gas-phase deposition.Further, since tin solder (or tin-silver-copper solder)
Fusion temperature it is higher, the use temperature of corresponding tungsten titanium target material component improves, and is increased to 200 DEG C within 140 DEG C of script
Left and right, has further expanded the use scope of tungsten titanium target material component.
In the welding method of tungsten titanium target material component provided by the present embodiment, is put into the welding surface of tungsten titanium target material 101
The solder of one amount simultaneously carries out the first infiltration processing, is put into the solder of the second amount in the welding surface of backboard 102 and carries out the second infiltration
Processing, after the second infiltration processing, to the solder of the welding surface of backboard 102 addition third amount, in the welding surface to backboard 102
After the solder for adding third amount, and after the first infiltration processing, the welding surface of tungsten titanium target material 101 is fastened on to the weldering of backboard 102
In junction.Due to successively using the first infiltration processing and the second infiltration processing to make corresponding solder and tungsten titanium target material 101 and backboard
102 are infiltrated respectively, then to the solder of the welding surface of backboard 102 addition third amount, then by tungsten titanium target material 101 and backboard
102 snap together, at this point, the solder of the first amount sufficiently infiltrated and the solder of the second amount and positioned at the third amount between them
Solder be sufficiently fused together, tungsten titanium target material 101 and backboard 102 are firmly welded together, so that finally obtained
Tungsten titanium target material components welding intensity improves.
Due to before welding, carrying out blasting treatment to the welding surface of tungsten titanium target material 101, increasing by 101 welding surface of tungsten titanium target material
Surface area and roughness further increase final to increase the immersional wetting of subsequent solder Yu 101 welding surface of tungsten titanium target material
The weld strength of tungsten titanium target material component.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (7)
1. a kind of welding method of tungsten titanium target material component characterized by comprising
Tungsten titanium target material and backboard are provided;
The solder of the first amount is put into the welding surface of the tungsten titanium target material and carries out the first infiltration processing;
The solder of the second amount is put into the welding surface of the backboard and carries out the second infiltration processing;
After second infiltration processing, the solder of the welding surface addition third amount of Xiang Suoshu backboard;
It, will be described after the solder for adding the third amount to the welding surface of the backboard, and after first infiltration processing
The welding surface of tungsten titanium target material is fastened on the welding surface of the backboard;
The solder of first amount is 30g/cm2~40g/cm2;The solder of second amount is 30g/cm2~40g/cm2;It is described
The solder of third amount is 200g/cm2~800g/cm2;
After the welding surface of the tungsten titanium target material is fastened on the welding surface of the backboard, tungsten titanium target material and backboard are added
Pressure, and in pressure process, the tungsten titanium target material and backboard are cooled to 150 DEG C~170 DEG C;
After the tungsten titanium target material and backboard are cooled to 150 DEG C~170 DEG C, opposite direction is carried out to the tungsten titanium target material and backboard and is added
Pressure processing.
2. the welding method of tungsten titanium target material component as described in claim 1, which is characterized in that the solder of first amount is tin
Solder or tin-silver-copper solder;The solder of second amount is tin solder or tin-silver-copper solder;The solder of the third amount is
Tin solder or tin-silver-copper solder.
3. the welding method of tungsten titanium target material component as described in claim 1, which is characterized in that the weldering of the third amount of addition
Material is molten condition.
4. the welding method of tungsten titanium target material component as described in claim 1, which is characterized in that in the welding of the tungsten titanium target material
Before face is put into the solder of the first amount and carries out the first infiltration processing, further includes: carry out sandblasting to the welding surface of the tungsten titanium target material
Processing, the blasting treatment make the roughness of the welding surface reach 3 μm~5 μm.
5. the welding method of tungsten titanium target material component as described in claim 1, which is characterized in that the first infiltration processing packet
It includes: heating the tungsten titanium target material, before the heating or in the heating process, put in the welding surface of the tungsten titanium target material
Enter the solder of first amount, and be heated to the solder fusing of first amount, then to the solder of first amount with it is described
Ultrasonication or mechanical polish-brush processing are carried out between the welding surface of tungsten titanium target material;The second infiltration processing includes: heating
The backboard is put into the weldering of second amount in the welding surface of the backboard before the heating or during the heat adds
Material, and it is heated to the solder fusing of second amount, then between the solder to second amount and the welding surface of the backboard
Carry out ultrasonication or mechanical polish-brush processing.
6. the welding method of tungsten titanium target material component as claimed in claim 5, which is characterized in that add the solder of first amount
Heat is heated to 230 DEG C~260 DEG C to 230 DEG C~260 DEG C, by the solder of second amount.
7. the welding method of tungsten titanium target material component as described in claim 1, which is characterized in that by the welding of the tungsten titanium target material
When face is fastened on the welding surface of the backboard, protected in solder periphery topping up or nitrogen.
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CN109483081A (en) * | 2018-12-03 | 2019-03-19 | 先导薄膜材料(广东)有限公司 | Metal targets bind solder and preparation method thereof |
CN112059349A (en) * | 2020-08-31 | 2020-12-11 | 宁波江丰电子材料股份有限公司 | Welding method of titanium target and copper back plate |
CN112355427A (en) * | 2020-11-02 | 2021-02-12 | 河南东微电子材料有限公司 | Method for welding magnesium oxide target and back plate |
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CN112846560B (en) * | 2021-01-04 | 2022-12-02 | 宁波江丰电子材料股份有限公司 | Processing method for target material assembly before welding |
CN114161041A (en) * | 2021-12-27 | 2022-03-11 | 无锡海克赛德热能科技有限公司 | Hot-pressing type energy-saving low-temperature welding equipment |
CN114393449A (en) * | 2022-01-24 | 2022-04-26 | 宁波江丰电子材料股份有限公司 | Preparation method of monocrystalline silicon target material of molybdenum back plate substrate |
CN114752899A (en) * | 2022-03-13 | 2022-07-15 | 先导薄膜材料(广东)有限公司 | Binding method of tungsten-titanium target material |
CN114453691A (en) * | 2022-03-21 | 2022-05-10 | 合肥江丰电子材料有限公司 | Welding method of target assembly |
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TWI223673B (en) * | 2002-07-25 | 2004-11-11 | Hitachi Metals Ltd | Target and manufacturing method thereof |
CN101543924A (en) * | 2009-03-12 | 2009-09-30 | 宁波江丰电子材料有限公司 | Method for welding target material and back board |
CN101543923B (en) * | 2009-03-12 | 2012-07-04 | 宁波江丰电子材料有限公司 | Method for welding target material and back board |
CN101648307A (en) * | 2009-05-08 | 2010-02-17 | 宁波江丰电子材料有限公司 | Manufacturing method of target material assembly |
CN101648308A (en) * | 2009-05-08 | 2010-02-17 | 宁波江丰电子材料有限公司 | Manufacturing method of target material assembly |
CN101648305A (en) * | 2009-08-24 | 2010-02-17 | 宁波江丰电子材料有限公司 | Welding method of large-size target assembly |
CN101811209A (en) * | 2010-04-14 | 2010-08-25 | 宁波江丰电子材料有限公司 | Manufacture method of target assembly |
CN101956168B (en) * | 2010-10-29 | 2011-11-02 | 宁波江丰电子材料有限公司 | Method for manufacturing tungsten titanium alloy target structure |
CN103567583B (en) * | 2012-07-30 | 2015-12-02 | 宁波江丰电子材料股份有限公司 | The welding method of aluminium target material assembly |
CN103785911B (en) * | 2012-10-30 | 2016-03-09 | 宁波江丰电子材料股份有限公司 | The welding method of target material assembly |
CN103726025B (en) * | 2014-01-02 | 2016-10-05 | 昆山全亚冠环保科技有限公司 | A kind of target material assembly and preparation method thereof |
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