CN106356472A - OLED device and manufacture method thereof - Google Patents
OLED device and manufacture method thereof Download PDFInfo
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- CN106356472A CN106356472A CN201610908955.6A CN201610908955A CN106356472A CN 106356472 A CN106356472 A CN 106356472A CN 201610908955 A CN201610908955 A CN 201610908955A CN 106356472 A CN106356472 A CN 106356472A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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Abstract
The invention provides an OLED device and a manufacture method thereof. The manufacture method comprises the following steps: forming a first flexible basal layer on a rigid basal plate; forming a radiating layer on the first flexible basal layer; forming a second flexible basal layer on the radiating layer; forming an OLED device layer on the second flexible basal layer; and separating the rigid basal plate from the first flexible basal layer to form an OLED device. According to the manufacture method, the radiating layer is manufactured between two flexible basal layers, so that the heat conducting performance of a panel can be improved, and the injury of laser energy on the OLED device when the rigid basal plate is separated from the first flexible basal layer can be reduced.
Description
Technical field
The present invention relates to field of liquid crystal display, more particularly to a kind of oled device and preparation method thereof.
Background technology
With the scientific and technological development and people raising to product requirement, while pursuing high-resolution, also pursuing
Gently, thin, narrow frame, the in addition requirement to display device is no longer limited only to plane and shows, it is desirable to have curved surface and more three-dimensional
Display effect, therefore flexible display technologies comply with and give birth to.
In prior art, apply more extensive process for manufacturing flexible display, be that one layer of tool is made on rigid substrate
There is the flexible substrate layer of the oxygen performance that blocks water, (thin film transistor, thin film is brilliant then to make tft on flexible substrates
Body pipe) circuit and oled (organic light-emitting diode, Organic Light Emitting Diode), then adopt thin-film package
Technology is packaged.Flexible display is taken off after completing from rigid substrate by device production to be shown.And by flexibility
Produce larger heat when display takes off from rigid substrate, and radiating effect is not good, journey is damaged to flexible base board and tft circuit
Degree is larger, leads to product fraction defective to increase.
Therefore, prior art existing defects, need to improve.
Content of the invention
It is an object of the invention to provide a kind of improved oled device and preparation method thereof.
For solving the above problems, the technical scheme that the present invention provides is as follows:
The present invention provides a kind of manufacture method of oled device, comprises the following steps:
First flexbile base is formed on rigid substrate；
Described first flexbile base forms a heat dissipating layer；
Second flexbile base is formed on described heat dissipating layer；
Oled device layer is formed on described second flexbile base；
Rigid substrate is separated with described first flexbile base, to form oled device.
In the manufacture method of oled device of the present invention, described formation oled device on described second flexbile base
The step of part layer, specifically includes:
Tft layer is formed on described second flexbile base；
Oled luminescent layer is formed on described tft layer；
Encapsulated layer is formed on described oled luminescent layer.
In the manufacture method of oled device of the present invention, described heat dissipating layer is graphene layer.
In the manufacture method of oled device of the present invention, described formation one radiating on described first flexbile base
The step of layer includes:
Attach multi-layer graphene film in described first flexbile base successively, or in described first flexbile base deposition multilamellar
Graphene.
In the manufacture method of oled device of the present invention, the thickness of described graphene layer is 5～25 μm.
In the manufacture method of oled device of the present invention, described rigid substrate is divided with described first flexbile base
From step, specifically include:
Using laser technology, rigid substrate is separated with described first flexbile base.
In the manufacture method of oled device of the present invention, described first flexbile base that formed on rigid substrate
Step includes:
By the way of spraying or coating, the first flexbile base is formed on rigid substrate.
The present invention provides a kind of oled device, comprising:
First flexbile base；
Heat dissipating layer, it is arranged on described first flexbile base；
Second flexbile base, it is arranged on described heat dissipating layer；
Oled device layer, it is arranged on described second flexbile base.
In oled device of the present invention, described heat dissipating layer is graphene layer.
In oled device of the present invention, described graphene layer includes being attached to successively many on the first flexbile base
Layer graphene film.
Compared to existing oled device and preparation method thereof, the present invention passes through to form the first flexible base on rigid substrate
Layer；Described first flexbile base forms a heat dissipating layer；Second flexbile base is formed on described heat dissipating layer；Described second
Oled device layer is formed on flexbile base；Rigid substrate is separated with described first flexbile base, to form oled device.This
Bright heat conductivility heat dissipating layer being produced between two sheets of flexible basic unit, improve panel, reduces by rigid substrate simultaneously
The damage to oled device for laser energy when separating with the first flexbile base.
Brief description
Fig. 1 is the structural representation of the preferred embodiment of oled device of the present invention；
Fig. 2 is another structural representation of the preferred embodiment of oled device of the present invention；
Fig. 3 is oled layer detailed structure schematic diagram in the preferred embodiment of oled device of the present invention.
Fig. 4 is the structural representation of oled device in the preferred embodiment of oled device of the present invention.
Fig. 5 is the schematic flow sheet of the preferred embodiment of oled device manufacture method of the present invention.
Fig. 6 is the schematic diagram of a scenario selecting embodiment of the oled device manufacture method of the present invention.
Specific embodiment
The explanation of following embodiment is with reference to additional schema, the particular implementation implemented in order to illustrate the present invention may be used to
Example.The direction term that the present invention is previously mentioned, for example " on ", D score, "front", "rear", "left", "right", " interior ", " outward ", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term of use is to illustrate and understand the present invention, and is not used to
Limit the present invention.
In in figure, the similar module of structure is to be represented with identical label.
Refer to Fig. 1, this oled device include the first flexbile base 10, heat dissipating layer 20, the second flexbile base 30 and
Oled device layer 40.
Wherein, the first flexbile base 10 is pi (polyimide film, polyimide fiber) layer, this first flexbile base
10 can be formed by way of spraying or being coated with rigid substrate 100.Such as, spray gun or dish-style nebulizer can be adopted,
The polyimide fiber spraying atomization on rigid substrate 100 obtains, or can be coated with the polyamides of pasty state on rigid substrate
Imine fiber obtains.Wherein, this rigid substrate can be transparent rigid substrate, and such as, this rigid substrate 100 can be glass
Glass, quartz etc..The thickness of this first flexbile base 10 may be between 10～50 μm.
Heat dissipating layer 20 is arranged on this first flexbile base 10, and it can be by the material preparation of stronger heat conduction and heat radiation performance
Become, such as graphite flake, tinsel etc..Preferably, this heat dissipating layer 20 can be graphene layer.Wherein, this graphene layer specifically may be used
To be made up of the multi-layer graphene film being attached to successively on the first flexbile base.Graphene be at present thin be but also the hardest
Nano material, it is almost fully transparent, and heat conductivity is up to 5300w/m k, higher than CNT and diamond, therefore
There is high heat conduction heat dispersion.
In specific implementation process, between the thickness of this graphene layer is preferably 5～25 μm, namely this heat dissipating layer 20 is general
Can be made up of 14900～74600 layer graphene films, or can equably deposit 5～25 μ on this first flexbile base 10
The Graphene of m thickness, to obtain this heat dissipating layer 20.
Second flexbile base 30 is pi layer, and it is arranged on heat dissipating layer 20.This second flexbile base 30 can be by spraying
Or the mode of coating obtains.Such as, this second flexbile base 30 can adopt spray gun or dish-style nebulizer, sprays on heat dissipating layer 20
The polyimide fiber applying atomization obtains, or can be coated with the polyimide fiber of pasty state on this heat dissipating layer 20 and obtain.Its
In, this and the thickness of flexbile base 20 may be between 10～50 μm.
Oled device layer 40, it is arranged on the second flexbile base 30.Refer to Fig. 2, this oled device layer 40 includes tft
Layer 41, oled luminescent layer 42 and encapsulated layer 43.
Wherein, tft layer 41 is the thin film transistor (TFT) array in oled device inside structure, is arranged at the second flexbile base 30
On.The preparation technology of tft structure division is with chemical vapor deposition (cvd), sputtering sedimentation (sputter) technique, gold-tinted, etching etc.
Based on.
Oled luminescent layer 42 is the luminous component of oled device, and it is arranged on tft layer 41.Oled can be divided into small molecule and
Two kinds of main Types of macromolecule, its structure simultaneously differs.Either small molecule oled or macromolecule oled, thin, transparent
The tin indium oxide (ito film) with electric conductivity has an organic light emitting material between negative electrode and metal anode.Small molecule
The luminescent layer of oled is layer structure, that is, by hole transmission layer, luminescent layer and electron transfer layer up of three layers, and macromolecule oled
Organic luminous layer be single layer structure.
Taking small molecule oled as a example, electronics and hole are first injected into electron transfer layer and hole transmission layer, Ran Houzai respectively
It is injected into luminescent layer, meet and be combined in electronics and hole in luminescent layer, visible ray is sent due to the transition that can carry.Specifically
Ground, refer to Fig. 3, hole injection layer 421 that it includes being sequentially formed on tft layer 41, hole transmission layer 422, electronic blocking
Layer 423, luminescent layer 424, hole blocking layer 425, electron transfer layer 426 and electron injecting layer 427.
Its luminescence mechanism is: electron injection passes through electron injecting layer (eil) 427, electron transfer layer (etl) 426, hole resistance
Barrier 425 reaches the trichroism light-emitting zone (i.e. luminescent layer 424) of rgb, carries out compound sending out in the trichroism light-emitting zone of rgb and hole
Light；Hole injection layer (hil) 421, hole transmission layer (htl) 422, trichroism the sending out of electronic barrier layer 423 arrival rgb are passed through in hole
Light region, carries out recombination luminescence in the trichroism light-emitting zone of rgb and electronics.
Encapsulated layer 43 be thin film transistor (TFT) array, it is arranged on oled luminescent layer 42, and with the second flexbile base 30 shape
Become coating space.Wherein, this coating space cladding tft layer 41 and oled luminescent layer 42.
In the present embodiment, need to separate rigid substrate 100 with the first flexible base board 10, to obtain oled device, such as Fig. 4
Shown.
The oled device of this preferred embodiment, including the first flexbile base 10, heat dissipating layer 20, the second flexbile base 30 and
Oled device layer 40, heat dissipating layer 20 is arranged between the first flexbile base 10 and the second flexbile base 30 present invention, improves
The heat conductivity of substrate；In addition, heat dissipating layer 20 is set to graphene layer, due to Graphene, to have high specific modulus, high tenacity etc. excellent
Different mechanical performance, it is added in flexible base board it may be advantageous that improving the mechanical performance of substrate so that oled device has relatively
Good ductility.
Refer to Fig. 5, Fig. 5 is the schematic flow sheet of the manufacture method of oled device of the present invention.The system of this oled device
Include below scheme as method:
S201, the first flexbile base is formed on rigid substrate.
S202, a heat dissipating layer is formed on the first flexbile base.
S203, the second flexbile base is formed on heat dissipating layer.
S204, on the second flexbile base formed oled device layer.
S205, rigid substrate is separated with the first flexbile base, to form oled device.
Below with reference to Fig. 2, the manufacture method step of above oled device is described in detail.
In step s201, this first flexbile base 10 is pi layer, and rigid substrate 100 can be transparent hard material,
The materials such as such as glass or quartz, pi can be produced on rigid substrate in the way of using spraying or coating；That is, hard
The step forming the first flexbile base on property substrate 100 includes:
By the way of spraying or coating, the first flexbile base 10 is formed on rigid substrate 100.
Such as, first glass substrate is cleaned with pretreatment, then can adopt spray gun or dish-style nebulizer, in glass
The polyimide fiber spraying atomization on substrate obtains, or can be coated with the polyimide fiber of pasty state on the glass substrate and obtain
Arrive.Wherein, the thickness of this first flexbile base 10 may be between 10～50 μm.
In step s202, heat dissipating layer 20 can be prepared from by the material of stronger heat conduction and heat radiation performance, such as graphite flake, gold
Belong to paillon foil etc..Preferably, this heat dissipating layer 20 can be graphene layer.And by Graphene shape layer Cheng Yu on the first flexbile base 10
Mode can have multiple, it is alternatively possible to multi-layer graphene film is attached on the first flexbile base 10, to obtain Graphene
Layer；That is, the step forming a heat dissipating layer on the first flexbile base includes:
Attach multi-layer graphene film in the first flexbile base 10 successively.
In specific implementation process, between the thickness of this graphene layer is preferably 5～25 μm, and single-layer graphene film thickness
It is about 0.335nm.That is, 14900～74600 layer graphene films can be attached in the first flexbile base 10 successively, to obtain stone
Black alkene layer is as heat dissipating layer 20.
Another it is alternatively possible to using in the first flexbile base surface deposited metal, form the nanoparticle of metal, then
Deposit the Graphene of multilamellar using cvd mode；That is, the step forming a heat dissipating layer on the first flexbile base includes:
Multi-layer graphene is deposited on the first flexbile base 10.
Likewise it is possible to by the first flexbile base 10 equably deposit thickness be the Graphene between 5～25 μm,
To obtain graphene layer as heat dissipating layer 20.
In step s203, this second flexbile base 30 is pi layer.Pi can be made in the way of using spraying or coating
On heat dissipating layer 20.Such as, this second flexbile base 30 can adopt spray gun or dish-style nebulizer, sprays mist on heat dissipating layer 20
The polyimide fiber changed obtains, or can be coated with the polyimide fiber of pasty state on this heat dissipating layer 20 and obtain.Wherein, should
The thickness of the second flexbile base 30 may be between 10～50 μm.
In step s204, this oled device layer 40 can be made up of tft layer 41, luminescent layer 42 and encapsulated layer 43, that is,
The step forming oled device layer on the second flexbile base includes:
Tft layer 41 is formed on the second flexbile base 30；
Oled luminescent layer 42 is formed on tft layer 41；
Encapsulated layer 43 is formed on oled luminescent layer 42.
Wherein, tft layer 41 is the thin film transistor (TFT) array in oled device inside structure.It can adopt cvd, sputter
The modes such as technique, gold-tinted, etching form tft layer 41 on the second flexbile base 30.
In the present embodiment, oled luminescent layer 42 is the luminous component of oled device.Wherein, the preparation of oled luminescent layer 42,
Specifically include to prepare in anode layer surface successively and form hole injection layer, hole transmission layer, electronic barrier layer, luminescent layer, hole
Barrier layer, electron transfer layer and electron injecting layer, it all can be prepared using evaporation mode.
Encapsulated layer 43 is thin film transistor (TFT) array, and it adopts drive integrated circult (ic) encapsulation technology, in oled luminescent layer
When forming encapsulated layer 43 on 42, using modes such as cvd, sputter technique, gold-tinted, etchings, on oled luminescent layer 42 surface, with
And the part that tft layer 41 is uncovered, form encapsulated layer 43 in uniform thickness.
In step s205, can be using llo (laser left off, laser) technique by the first flexbile base 10
Take off from rigid substrate 100；That is, detached with the first flexbile base for rigid substrate step is included:
Using laser technology, rigid substrate 100 is separated with the first flexbile base 10.
Specifically, as shown in fig. 6, Fig. 6 is the process that the first flexbile base 10 takes off from rigid substrate 100, laser radium
When penetrating, the energy of laser in the intersection of the first flexbile base 10 and rigid substrate 100, by the first flexbile base 10 from rigid base
Peel off on plate, the heat transfer that laser can be produced by the graphene layer (i.e. heat dissipating layer 20) of high heat conduction effectively, reduce local
Heat affecting.Therefore, make laser energy during tft layer 41 and the second flexible layer 30 can be effectively prevented from laser
Impact.In addition, the presence of Graphene can intercept the shadow to the electric property of thin film transistor (TFT) in tft layer for the laser energy effectively
Ring.
In specific implementation process, because the graphene-structured in the whole face in the flexible base board back side is so that the panel of this structure has
There is preferable heat conductivility.In traditional design, improving conduction of heat needs to stick a floor height heat conduction in the behind of whole panel
Graphite flake or the Heat Conduction Material such as Copper Foil so that integral panels thickness is thicker.And in the present embodiment, by highly heat-conductive material (i.e.
Graphene) it is made in inside panel, can effectively reduce plate thickness.Further, since Copper Foil and graphite flake etc. are all nontransparent
Material, the problem improving panel heat conduction in outside is difficult to realize Transparence Display.And in the present embodiment, highly heat-conductive material is made in face
Inside plate, on the premise of realizing Transparence Display, panel is also made to have high heat conductivility.
The oled device manufacture method of this preferred embodiment, forms the first flexbile base on rigid substrate, soft first
Form a heat dissipating layer in property basic unit, then sequentially form the second flexbile base and oled device layer, finally by rigid substrate and
One flexbile base separates, to form oled device.Heat dissipating layer is produced between two sheets of flexible basic unit the present invention, improves panel
Heat conductivility and mechanical performance, reduce when separating rigid substrate with the first flexbile base laser energy to oled device
Damage, improve product to a certain extent makes yield.
In sum although the present invention is disclosed above with preferred embodiment, but above preferred embodiment and be not used to limit
The present invention processed, those of ordinary skill in the art, without departing from the spirit and scope of the present invention, all can make various change and profit
Decorations, therefore protection scope of the present invention is defined by the scope that claim defines.
Claims (10)
1. a kind of manufacture method of oled device is it is characterised in that comprise the following steps:
First flexbile base is formed on rigid substrate；
Described first flexbile base forms a heat dissipating layer；
Second flexbile base is formed on described heat dissipating layer；
Oled device layer is formed on described second flexbile base；
Rigid substrate is separated with described first flexbile base, to form oled device.
2. oled device as claimed in claim 1 manufacture method it is characterised in that described on described second flexbile base
The step forming oled device layer includes:
Tft layer is formed on described second flexbile base；
Oled luminescent layer is formed on described tft layer；
Encapsulated layer is formed on described oled luminescent layer.
3. the manufacture method of oled device as claimed in claim 1 is it is characterised in that described heat dissipating layer is graphene layer.
4. oled device as claimed in claim 3 manufacture method it is characterised in that described on described first flexbile base
The step forming a heat dissipating layer includes:
Attach multi-layer graphene film in described first flexbile base successively, or in described first flexbile base deposition Multi-layer graphite
Alkene.
5. oled device as claimed in claim 3 manufacture method it is characterised in that described graphene layer thickness be 5～
25μm.
6. oled device as claimed in claim 1 manufacture method it is characterised in that described by rigid substrate and described first
The detached step of flexbile base, specifically includes:
Using laser technology, rigid substrate is separated with described first flexbile base.
7. the manufacture method of oled device as claimed in claim 1 is it is characterised in that described form first on rigid substrate
The step of flexbile base includes:
By the way of spraying or coating, the first flexbile base is formed on rigid substrate.
8. a kind of oled device is it is characterised in that include:
First flexbile base；
Heat dissipating layer, it is arranged on described first flexbile base；
Second flexbile base, it is arranged on described heat dissipating layer；
Oled device layer, it is arranged on described second flexbile base.
9. oled device as claimed in claim 8 is it is characterised in that described heat dissipating layer is graphene layer.
10. oled device as claimed in claim 9 it is characterised in that it is characterized in that, described graphene layer includes pasting successively
It is attached to the multi-layer graphene film on the first flexbile base.
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| CN107403875A (en) * | 2017-06-12 | 2017-11-28 | 漳州立达信光电子科技有限公司 | A kind of OLED radiator structures |
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