CN106356298A - Preparation method for silver nanowire film pattern and display substrate and display device - Google Patents
Preparation method for silver nanowire film pattern and display substrate and display device Download PDFInfo
- Publication number
- CN106356298A CN106356298A CN201610827967.6A CN201610827967A CN106356298A CN 106356298 A CN106356298 A CN 106356298A CN 201610827967 A CN201610827967 A CN 201610827967A CN 106356298 A CN106356298 A CN 106356298A
- Authority
- CN
- China
- Prior art keywords
- film
- nano silver
- silver wire
- preparation
- wire film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Abstract
The invention relates to the technical field of the display, in particular to a preparation method for silver nanowire film pattern, a display substrate and a display device. The preparation method comprises the following steps: (1) forming the silver nanowire film on the surface of the pre-determined substrate; (2) forming the photonasty dry film on the surface of the silver nanowire film, and patterning the photonasty dry film by using the exposure and development methods, wherein parts of the silver nanowire film is exposed on the patterned photonasty dry film; (3) removing the parts of the exposed silver nanowire film to form the pattern of the silver nanowire film; and (4) stripping the photonasty dry film from the silver nanowire film to obtain the silver nanowire film pattern namely. The traditional photoresist is replaced by using the photonasty dry film according to the method, the photoresist can be effectively prevented to be penetrated into the silver nanowire clearances during the process of the patterning, and the patterning is smoothly realized.
Description
Technical field
The application is related to display technology field and in particular to a kind of preparation method of nano silver wire film figure, display base plate
And display device.
Background technology
Transparent conductive film is a kind of conductive membrane being coated on the substrate surface with high light transmittance.This is thin
Film has good optical clarity and surface conductivity simultaneously, is widely used in display field；Wherein nano silver wire
Film has obtained extensive concern because of the remarkable stable chemical nature of argent and excellent electric conductivity and has studied.
In the prior art, the patterning of nano silver wire film is typically realized using manufacture of semiconductor technique.Specifically, may be used
With the surface-coated photoresist in established nano silver wire thin layer, then obtained by patterning processes such as exposure, development, etchings
To nano silver wire film figure.But because photoresist can penetrate in the network structure of nano silver wire thin film, hinder subsequent etching, from
And have a strong impact on product quality.
In consideration of it, special propose the application.
Content of the invention
The defect aiming to overcome that prior art of the application, provide a kind of preparation method of nano silver wire film figure,
Display base plate and display device.
The concrete technical scheme of the application is:
The application is related to a kind of preparation method of nano silver wire film figure, comprises the following steps:
(1) form nano silver wire film on the surface of default substrate；
(2) photosensitive dry film is formed on the surface of described nano silver wire film, using exposure, development method by described sense
Photosensitiveness dry film patterns, and the photosensitive dry film of described patterning exposes partly described nano silver wire film；
(3) pattern to form described nano silver wire film for the part nano silver wire film exposing described in removal；
(4) described photosensitive dry film is divested from described nano silver wire film described nano silver wire film figure is obtained.
Preferably, the thickness of described photosensitive dry film is 10-50 μm.
Preferably, in step (2), described photosensitive dry film is formed at described nano silver wire film by the method using pressing
On；Wherein, the temperature of pressing is 100-130 DEG C, and pressure is 0.3-0.5mpa, and film transfer rate is 1-3m/min.
Preferably, in step (2), the parameter of described exposure is set to 60-80mj/cm2；The parameter setting of described development
For: developing agent is selected from the aqueous sodium carbonate that concentration is 1wt%-2wt% or wet chemical, and development temperature is 30-50 DEG C,
Developing time is 30-40s.
Preferably, in step (3), the method for the part nano silver wire film exposing described in removal is wet etching.
Preferably, the etching liquid of described wet etching is chloroazotic acid or mixed acid nitration.
Preferably, the temperature of described wet etching is 30-50 DEG C, and etch period is 10-50s, the spray of described etching liquid
Pressure is 0.1-0.2mpa.
Preferably, using the photosensitive dry film reaction of stripper solution and described patterning, reach from described nano silver wire film
Divest described photosensitive dry film；Preferably, using 2-4wt% sodium hydrate aqueous solution as stripper solution, reaction temperature is 45-60
℃.
The application further relates to a kind of display base plate, including default substrate and the nano silver wire being formed on described default substrate
Film figure；Described default substrate is transparent substrates or nontransparent substrate；Described nano silver wire film figure adopts front arbitrary described
The preparation method of nano silver wire film figure is obtained.
The application further relates to a kind of display device, including aforesaid display base plate.
The technical scheme that the application provides can reach following beneficial effect:
The application adopts photosensitive dry film to substitute traditional photoresist, is prevented effectively from photoresist in patterning process and penetrates into
In nano silver wire gap, smoothly realize graphical.
Brief description
Fig. 1 is the layer structure schematic diagram of the embodiment of the present application transparent substrates, nano silver wire film and photosensitive dry film；
Fig. 2 is the structural representation after the photosensitive dry film patterning in structure shown in Fig. 1；
Fig. 3 is the structural representation after the nano silver wire film patterning in structure shown in Fig. 2；
Fig. 4 be structure shown in Fig. 3 in photosensitive dry film figure be stripped after structural representation；
Reference:
1- transparent substrates；
2- nano silver wire film；
3- photosensitive dry film.
Specific embodiment
Purpose, technical scheme and advantage for making the application are clearer, below in conjunction with the embodiment of the present application and accompanying drawing,
The technical scheme of the application is clearly and completely described it is clear that described embodiment is the application part enforcement
Example, rather than whole embodiments.The technical scheme being provided based on the application and given embodiment, those skilled in the art
The every other embodiment being obtained under the premise of not making creative work, broadly falls into the scope of the application protection.
Literary composition in " on ", D score all with the laying state of the layer structure in accompanying drawing as reference.
The one side of the application, is related to a kind of preparation method of nano silver wire film figure, comprises the following steps:
(1) form nano silver wire film on the surface of default substrate；
(2) photosensitive dry film is formed on the surface of nano silver wire film, using exposure, development method by described photonasty
Dry film patterns, and the photosensitive dry film of patterning exposes part nano silver wire film；
(3) remove the part nano silver wire film exposing to form the pattern of nano silver wire film；
(4) photosensitive dry film is divested from nano silver wire film nano silver wire film figure is obtained.
, due to directly forming photosensitive dry film on nano silver wire film, during exposure imaging, developing agent is only right for the application
Unexposed photosensitive dry film is had an effect, therefore, it is possible to ensure the integrity of the nano silver wire film being covered by photosensitive dry film；
And in photosensitive dry film patterning process, due to without using photoresist, thus avoid photoresist to nano silver wire film
Osmosis pollution.
The material of the photosensitive dry film in the application is selected from conventional photosensitive material dry film.As being purchased from leading both at home and abroad
Stream manufacturer such as Changxing mu-315 photosensitive dry film, Asahi Chemical Industry's yq-20sd photosensitive dry film, Hitachi's h-9030 photosensitive dry film etc..
As one kind preferably embodiment of the application preparation method, the thickness of photosensitive dry film is arranged on 10-50 μm.
Thickness excessive or too small exposed and developed process window (process window) all can be made narrow, be unfavorable for process duct
Control.
As one kind preferably embodiment of the application preparation method, photosensitive dry film is formed by the method using pressing
On the surface of nano silver wire film.
Preferably, bonding processes, the operating temperature of pressing machine (or film laminator) is 100-130 DEG C, and operating pressure is 0.3-
0.5mpa, film transfer rate is 1-3m/min.
As one kind preferably embodiment of the application preparation method, by photosensitive dry film patterning, described exposure
Parameter is set to 60-80mj/cm2, the parameter of development is set to: developing agent is selected from the sodium carbonate that concentration is 1wt%-2wt%
Solution or wet chemical, development temperature is 30-50 DEG C, and developing time is 30-40s.
Thin-film patterning patterning processes, can refer to including photoetching process, or, including photoetching process and etch step, with
When can also include printing, ink-jet etc. other be used for form predetermined pattern technique；Photoetching process, refers to exposure, development
The technique forming pattern etc. the utilization photoresist of technical process, mask plate, exposure machine etc..Can knot according to formed in the application
Structure selects corresponding patterning processes.
In existing processing film technique, the method removing a thin layer typically adopts etching technics.This etching technics
Including dry etching and wet etching.Wherein, dry etching is the technology that a kind of using plasma carries out thin film etching；Wet method
Etching is that a kind of material by needs etching is immersed in the technology carrying out chemical attack in etching liquid.Comparatively speaking, wet method is carved
The scope of application of erosion is wider, and relatively economical.It is thus advantageous to reduce the production cost of product.
As one kind preferably embodiment of the application preparation method, exposed using the method removal of wet etching
Part nano silver wire film is to form the pattern of nano silver wire film.
As one kind preferably embodiment of the application preparation method, is carried out to the nano silver wire film exposing wet method quarter
During erosion, the etching liquid of use is selected from chloroazotic acid or mixed acid nitration.
The consisting of of described chloroazotic acid: nitric acid 6wt%-8wt%, hydrochloric acid 20wt%-30wt%, additive 0.5wt%-
3wt%, remaining is water.
The consisting of of mixed acid nitration: nitric acid 5wt%-10wt%, acetic acid 10wt%-20wt%, phosphatase 24 5wt%-
55wt%, additive 1wt%-5wt%, remaining is water.
Preferably, being 30-50 DEG C using the etching temperature that above-mentioned etching liquid performs etching；Etch period is 10-50s；Carve
The spray pressure of erosion liquid is 0.1-0.2mpa.
In the application, divest from nano silver wire film photosensitive dry film method can be using stripper solution be attached to silver
Photosensitive dry film figure reaction on nano wire film figure removes photosensitive dry film figure.
Using 2-4wt% sodium hydrate aqueous solution as stripper solution, stripper solution be attached on nano silver wire film figure
The reaction of photosensitive dry film figure removes photosensitive dry film figure；Reaction temperature is 45-60 DEG C.
The default substrate of the application can be transparent substrates or nontransparent substrate.
The another aspect of the application, further relates to a kind of display base plate, including default substrate and being formed on default substrate
Nano silver wire film figure；Nano silver wire film figure adopts the preparation method of aforementioned arbitrary nano silver wire film figure to be obtained.Silver nanoparticle
Line film bend resistance ability is strong, is formed in display base plate, can serve as the electrode of flexible touch screen.
The another further aspect of the application, further relates to a kind of display device, including aforesaid display base plate.With this display base plate
Nano silver wire film figure substitutes conventional thin film transistor anode material ito, can improve the bend resistance ability of display device.
Below by way of specific embodiment, the technical scheme of the application is further elaborated:
Embodiment 1
As one embodiment of preparation method of the application a kind of nano silver wire film figure, specifically include following steps:
100: the nano silver wire film that a layer thickness is 100nm is formed on a transparent substrate using coating process；
101: the photosensitive dry film being 20 μm using thickness, then pass through film laminator, temperature be 105 DEG C, pressure be
Under conditions of 0.35mpa, transfer rate are 2m/min, photosensitive dry film is pressed together on aforementioned nano silver wire film, as Fig. 1 institute
Show；
102: adopt exposure imaging to process photosensitive dry film layer, in 70mj/cm2Under the conditions of expose, and using 1wt%
Aqueous sodium carbonate, as developing agent, 30 DEG C of development temperature, developing time 32s, forms the pattern of photosensitive dry film, and exposes
Part nano silver wire film, as shown in Figure 2；
103: etching liquid, spray pressure 0.15mpa are done using chloroazotic acid；Etching temperature is 40 DEG C, to the above-mentioned portion exposing
Divide nano silver wire film to carry out wet etching 20s, form nano silver wire film figure, as shown in Figure 3；
104: 3wt% sodium hydrate aqueous solution is used as stripper solution, stripping temperature 50 C, stripper solution be attached to Yin Na
Photosensitive dry film on rice noodle film figure carries out reaction and removes photosensitive dry film figure, obtains nano silver wire film figure, as Fig. 4 institute
Show.
Embodiment 2
200: the nano silver wire film that a layer thickness is 100nm is formed on a transparent substrate using coating process；
201: the photosensitive dry film being 10 μm using thickness, then pass through film laminator, temperature be 130 DEG C, pressure be
Under conditions of 0.4mpa, transfer rate are 1m/min, photosensitive dry film is pressed together on aforementioned nano silver wire film, as shown in Figure 1；
202: adopt exposure imaging to process photosensitive dry film layer, in 60mj/cm2Under the conditions of expose, and using 1wt%
Aqueous sodium carbonate, as developing agent, 30 DEG C of development temperature, developing time 32s, forms the pattern of photosensitive dry film, and exposes
Part nano silver wire film, as shown in Figure 2；
203: etching liquid, spray pressure 0.2mpa are done using digestion nitration mixture；Etching temperature is 30 DEG C, exposes to above-mentioned
Part nano silver wire film carries out wet etching 10s, forms nano silver wire film figure, as shown in Figure 3；
204: 2wt% sodium hydrate aqueous solution is used as stripper solution, stripping temperature 60 C, stripper solution be attached to Yin Na
Photosensitive dry film on rice noodle film figure carries out reaction and removes photosensitive dry film figure, obtains nano silver wire film figure, as Fig. 4 institute
Show.
Embodiment 3
300: the nano silver wire film that a layer thickness is 100nm is formed on a transparent substrate using coating process；
301: the photosensitive dry film being 50 μm using thickness, then pass through film laminator, temperature be 100 DEG C, pressure be
Under conditions of 0.5mpa, transfer rate are 3m/min, photosensitive dry film is pressed together on aforementioned nano silver wire film, as shown in Figure 1；
302: adopt exposure imaging to process photosensitive dry film layer, in 80mj/cm2Under the conditions of expose, and using 2wt%
Aqueous sodium carbonate, as developing agent, 30 DEG C of development temperature, developing time 40s, forms the pattern of photosensitive dry film, and exposes
Part nano silver wire film, as shown in Figure 2；
303: etching liquid, spray pressure 0.10mpa are done using chloroazotic acid；Etching temperature is 50 DEG C, to the above-mentioned portion exposing
Divide nano silver wire film to carry out wet etching 50s, form nano silver wire film figure, as shown in Figure 3；
304: 4wt% sodium hydrate aqueous solution is used as stripper solution, stripping temperature 45 C, stripper solution be attached to Yin Na
Photosensitive dry film on rice noodle film figure carries out reaction and removes photosensitive dry film figure, obtains nano silver wire film figure, as Fig. 4 institute
Show.
Although the application is with preferred embodiment disclosure as above, it is not for limiting claim, any this area skill
Art personnel, on the premise of conceiving without departing from the application, can make some possible variations and modification, therefore the application
Protection domain should be defined by the scope that the application claim is defined.
Claims (10)
1. a kind of preparation method of nano silver wire film figure is it is characterised in that comprise the following steps:
(1) form nano silver wire film on the surface of default substrate；
(2) photosensitive dry film is formed on the surface of described nano silver wire film, using exposure, development method by described photonasty
Dry film patterns, and the photosensitive dry film of described patterning exposes partly described nano silver wire film；
(3) pattern to form described nano silver wire film for the part nano silver wire film exposing described in removal；
(4) described photosensitive dry film is divested from described nano silver wire film described nano silver wire film figure is obtained.
2. preparation method according to claim 1 is it is characterised in that the thickness of described photosensitive dry film is 10-50 μm.
3. preparation method according to claim 1 is it is characterised in that in step (2), using pressing method by described sense
Photosensitiveness dry film is formed on described nano silver wire film；Wherein, the temperature of pressing is 100-130 DEG C, and pressure is 0.3-0.5mpa, film
Transfer rate is 1-3m/min.
4. preparation method according to claim 1 is it is characterised in that in step (2), the parameter of described exposure is set to
60-80mj/cm2；The parameter of described development is set to: developing agent be selected from concentration be 1wt%-2wt% aqueous sodium carbonate or
Wet chemical, development temperature is 30-50 DEG C, and developing time is 30-40s.
5. preparation method according to claim 1 is it is characterised in that in step (3), expose described in removal is partly silver-colored
The method of nano wire film is wet etching.
6. preparation method according to claim 5 is it is characterised in that the etching liquid of described wet etching is chloroazotic acid or nitrification
Nitration mixture.
7. preparation method according to claim 6, it is characterised in that the temperature of described wet etching is 30-50 DEG C, etches
Time is 10-50s, and the spray pressure of described etching liquid is 0.1-0.2mpa.
8. preparation method according to claim 1 is it is characterised in that adopt the photosensitive dry of stripper solution and described patterning
Film reaction, reaches and divests described photosensitive dry film from described nano silver wire film；Preferably, using 2-4wt% sodium hydroxide water
Solution is 45-60 DEG C as stripper solution, reaction temperature.
9. a kind of display base plate, including default substrate and the nano silver wire film figure being formed on described default substrate；Its feature
It is, described default substrate is transparent substrates or nontransparent substrate；Described nano silver wire film figure adopts claim 1-8 arbitrary
The preparation method of described nano silver wire film figure is obtained.
10. a kind of display device is it is characterised in that include the display base plate described in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610827967.6A CN106356298A (en) | 2016-09-18 | 2016-09-18 | Preparation method for silver nanowire film pattern and display substrate and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610827967.6A CN106356298A (en) | 2016-09-18 | 2016-09-18 | Preparation method for silver nanowire film pattern and display substrate and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106356298A true CN106356298A (en) | 2017-01-25 |
Family
ID=57859917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610827967.6A Pending CN106356298A (en) | 2016-09-18 | 2016-09-18 | Preparation method for silver nanowire film pattern and display substrate and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106356298A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107419244A (en) * | 2017-06-30 | 2017-12-01 | 厦门理工学院 | A kind of nano-silver conductive film and preparation method thereof |
| WO2021168609A1 (en) * | 2020-02-24 | 2021-09-02 | 南昌欧菲显示科技有限公司 | Patterning method for silver nanowire transparent conductive material, and sensor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091761A (en) * | 2014-06-30 | 2014-10-08 | 京东方科技集团股份有限公司 | Patterned film preparation method, display substrate and display device |
| WO2015146097A1 (en) * | 2014-03-25 | 2015-10-01 | 凸版印刷株式会社 | Transparent conductive laminated body and touch panel provided with transparent conductive laminated body |
| CN105359069A (en) * | 2013-07-03 | 2016-02-24 | 阿莫善斯有限公司 | Touch sensor for touch screen panel, manufacturing method thereof, and touch screen panel including same |
| CN205120654U (en) * | 2015-04-23 | 2016-03-30 | 重庆医科大学附属永川医院 | Sensitization dry film - indium tin oxide electrode and cell impedance sensor |
| CN105900188A (en) * | 2013-12-30 | 2016-08-24 | 东进世美肯株式会社 | Method for patterning metal nanowire-based transparent conductive film through surface treatment |
-
2016
- 2016-09-18 CN CN201610827967.6A patent/CN106356298A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105359069A (en) * | 2013-07-03 | 2016-02-24 | 阿莫善斯有限公司 | Touch sensor for touch screen panel, manufacturing method thereof, and touch screen panel including same |
| CN105900188A (en) * | 2013-12-30 | 2016-08-24 | 东进世美肯株式会社 | Method for patterning metal nanowire-based transparent conductive film through surface treatment |
| WO2015146097A1 (en) * | 2014-03-25 | 2015-10-01 | 凸版印刷株式会社 | Transparent conductive laminated body and touch panel provided with transparent conductive laminated body |
| CN104091761A (en) * | 2014-06-30 | 2014-10-08 | 京东方科技集团股份有限公司 | Patterned film preparation method, display substrate and display device |
| CN205120654U (en) * | 2015-04-23 | 2016-03-30 | 重庆医科大学附属永川医院 | Sensitization dry film - indium tin oxide electrode and cell impedance sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107419244A (en) * | 2017-06-30 | 2017-12-01 | 厦门理工学院 | A kind of nano-silver conductive film and preparation method thereof |
| WO2021168609A1 (en) * | 2020-02-24 | 2021-09-02 | 南昌欧菲显示科技有限公司 | Patterning method for silver nanowire transparent conductive material, and sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWM594737U (en) | Electrode structure and touch panel thereof | |
| US9971182B2 (en) | Touch panel and preparation method therefor | |
| CN104485279A (en) | Transparent electrode based on metal nanometer grid and preparing method of transparent electrode | |
| TWM579329U (en) | Double-sided electrode | |
| CN103068186B (en) | The manufacture method of flexible circuit board blind hole | |
| CN104091761B (en) | Patterned film preparation method, display substrate and display device | |
| JP2007270179A (en) | Method of manufacturing plated film with patterned metal film using reducing polymer particle deposited thereon | |
| CN101754584A (en) | Method for preparing conducting lines | |
| CN106200283A (en) | Anticorrosive additive stripping liquid controlling | |
| CN106356298A (en) | Preparation method for silver nanowire film pattern and display substrate and display device | |
| JP2007270180A (en) | Method of manufacturing plated film with patterned metal film using reducing polymer particle deposited thereon | |
| CN108198785A (en) | A kind of array substrate preparation method, array substrate and display device | |
| JP2016085870A (en) | Method for manufacturing transparent conductive substrate, and touch panel sensor | |
| CN102277573B (en) | Chromium etchant for liquid crystal display screens and preparation method thereof | |
| JP2002525880A (en) | Manufacturing method of etched circuit | |
| CN208459988U (en) | Touch panel | |
| CN108650800B (en) | PCB production process capable of reducing dry film broken holes | |
| CN103823593B (en) | Prepare method and its application of the protective glass cover plate of colorful window border | |
| CN106004075B (en) | The manufacture method of thermal printing head heating base plate | |
| CN110139498A (en) | The anti-welding coating technique of flexible circuit board | |
| CN106486344B (en) | A kind of preparation method of patterned graphene film | |
| TW201216799A (en) | Manufacturing method of touch sensor pattern and signal conductor | |
| CN113437504B (en) | Transparent antenna preparation method based on film lithography process and transparent antenna | |
| CN208459987U (en) | Double-face electrode | |
| US9801284B2 (en) | Method of manufacturing a patterned conductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170125 |