CN106349106A - 一种有机光电材料以及包含该材料的有机电致发光器件 - Google Patents

一种有机光电材料以及包含该材料的有机电致发光器件 Download PDF

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CN106349106A
CN106349106A CN201610711611.6A CN201610711611A CN106349106A CN 106349106 A CN106349106 A CN 106349106A CN 201610711611 A CN201610711611 A CN 201610711611A CN 106349106 A CN106349106 A CN 106349106A
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高自良
张成新
冯鑫
石宇
王元贵
王新涛
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Abstract

本发明涉及一种有机光电材料,其特征在于,以蒽醌环为中心,并在蒽醌环的2位和6位引入芳基,所述有机光电材料的结构通式如式(I)所示:其中,Ar1和Ar2独立地为含有取代基或不含取代基的芳基。本发明还涉及上述有机光电材料的制备方法。本发明还涉及在发光层中使用了所述有机光电材料的有机电致发光器件。本发明通过所述有机光电材料和BEP来制备发光层,从而使所制备的OLED发光器件的启亮电压和最大亮度都得到巨大改进,具有良好的应用效果,具有良好的产业化前景。

Description

一种有机光电材料以及包含该材料的有机电致发光器件
技术领域
本发明涉及材料科学领域,更特别地,涉及一种有机光电材料以及包含该材料的有机电致发光器件。
背景技术
有机电致发光二级管(OLED)产生于上世纪80年代,有机发光二级管(OLED)具有自发光、广视角、响应速度快、可实现柔性显示等诸多优点,经过二十余年的发展,该技术已逐步走向成熟,目前,有机电致发光技术,主要被应用在两个领域中,分别为全彩显示和白光照明,基于OLED显示技术的商品,已经逐步实现产业化,比如,在智能手机、曲面电视等商品中,已经较广泛地应用了该项技术。
为了实现全彩显示,分别需要红、绿、蓝三种颜色的发光器件,与红光器件和绿光器件相比,蓝色发光器件尚不够成熟,器件寿命和效率偏低。人们正通过超净技术,封装技术,开发具有高玻璃化转变温度的蓝光材料等来提高蓝光器件的寿命,而掺杂技术和开发具有两极结构的新型材料,则是提高器件效率的方向。
掺杂技术是通过将发光材料(客体材料)分散在其它材料(主体材料)之中,来降低发光材料的浓度,从而避免分子间聚集和浓度淬灭,进而实现提高器件效率,改善电致发光色纯度,延长器件寿命的目的。
发明内容
为解决以上技术问题,本发明提供了一种有机光电材料,其以蒽醌环为中心,并在所述蒽醌环的2位和6位引入芳基,所述有机光电材料的结构通式如式(I)所示:
其中,Ar1和Ar2独立地为含有取代基或不含取代基的芳基。
优选地,所述Ar1和Ar2的分子量独立地在60-500之间。
优选地,所述Ar1和Ar2独立地选自含有取代基或不含取代基的苯基、萘基、菲基、蒽基、荧蒽基、芴基、芘基、三亚苯基、二苯并呋喃基、二苯并噻吩基、咔唑基、N-取代咔唑基。
优选地,所述有机光电材料的结构式为:
本发明还提供了一种上述有机光电材料的制备方法,包括以下步骤:
1)以2,6-二溴蒽醌为基础,合成中间体1,反应式如下:
2)用所述中间体1合成化合物1,反应式如下:
3)以所述化合物1为原料,与硼酸基取代的芳族化合物进行叉偶联反应,得到所述有机发光材料。
本发明还提供了一种有机电致发光器件,其包括发光层,所述发光层由上述发光材料和BEP组成。
优选地,所述发光材料与所述BEP的质量比为9:1。
优选地,所述有机电致发光器件由ITO导电玻璃衬底、空穴传输层、发光层、电子传输层、电子注入层和阴极层依次堆叠而成。其中,空穴传输层由NPB制成,电子传输层由TPBI制成,电子注入层由氟化锂制成,阴极层由铝制成。
附图说明
图1为本发明的电致发光器件的层结构示意图。
101、ITO导电玻璃衬底,102、空穴传输层,103、发光层,104、电子传输层,105、电子注入层,106阴极层。
具体实施方式
以下结合附图和实例对本发明的原理和特征进行描述,所举实例只用于解释本发明,并非用于限定本发明的范围。
化合物实施例
1.化合物1的制备:
1)制备中间体1
在1L三口烧瓶中加入2,6-二溴蒽醌(73.2g,0.20mol),乙二醇(14.9g,0.24mol),2.5g对甲苯磺酸,400mL二甲苯,加热回流,分水器分水回流12小时。反应结束后,水洗、分液,有机相减压脱除溶剂,柱层析,甲苯石油醚重结晶,得到白色固体中间体1,HPLC纯度99.6%,收率68.63%,MS(m/s):407.9。
2)制备化合物1
中间体2的制备:在配有恒压滴液漏斗的1L三口瓶中,加入金属镁(5.1g,0.21mol),将溴苯(31.4g,0.20mol)溶解在200g四氢呋喃中,并置于恒压滴液漏斗中,使用氮气保护,加热三口瓶至瓶内温度达到65℃,通过恒压滴液漏斗加入对溴碘苯的四氢呋喃溶液,首先加入50mL,待反应引发后,慢慢滴入剩余部分,1h滴加完毕,回流温度下反应2h,降至室温后转移至恒压漏斗中待用。将中间体1(82.0g,0.20mol)溶解在200g四氢呋喃之中加到2L三口瓶中,而后缓慢滴加上述待用溶液,回流温度下反应3h,反应结束后,降温至25℃,将以上反应液慢慢倾入200g质量浓度为10%的稀盐酸中,搅拌15min,分液,收集有机相,减压脱去溶剂,得到粘稠液体,不进行精制,直接用于下一步反应中。
向上述所得粘稠液体中加入250g苯,搅拌下加入1.42g(0.01mol)三氟化硼***溶液,60~65℃反应4h,淬灭反应,减压脱除溶剂,柱层析得到中间体2,HPLC纯度99.6%,收率45.88%,MS(m/s):546.0。
中间体3的制备:收集以上中间体2(54.8g,0.1mol),加入250mL甲苯和50mL 85%的甲酸,升温至回流,保温反应10小时。分液,水洗,有机相减压脱除溶剂,柱层析,得到白色固体即中间体3,HPLC纯度99.6%,收率85.22%,MS(m/s):502.0。
化合物1的制备:在1L三口瓶中,氮气保护下,加入中间体3(40.3g,0.08mol),丙二腈(6.6g,0.10mol),500mL无水二氯甲烷,冰浴降温至内温0-5℃,慢慢滴入22mL(0.20mol)四氯化钛,约0.5小时滴加完毕,缓慢滴入70mL吡啶,约1.0小时滴加完毕,滴加完毕移去冰浴,氮气保护下室温20-25℃搅拌反应24小时。将以上反应液慢慢倾入300g质量浓度为10%的稀盐酸中,搅拌10min,分液,收集有机相,减压脱去溶剂,得到黄色固体,冰醋酸重结晶后得到的黄色固体即化合物1,HPLC纯度99.5%,收率73.58%。
高分辨质谱,ESI源,正离子模式,分子式C29H16Br2N2,理论值549.9680,测试值,549.9683。元素分析(C29H16Br2N2),理论值C:63.07,H:2.92,N:5.07,实测值C:63.08,H:2.94,N:5.05。
实施例1化合物C01的制备
在250mL三口瓶中,加入化合物1(2.76g,0.005mol),苯硼酸(1.34g,0.011mol),K2CO3(2.07g,0.015mol),甲苯(60mL),去离子水(20mL),N2保护,加入Pd(PPh3)4(17 5mg),升温至回流,反应10小时,停反应,降温,分液,50mL去离子水洗1次,收集有机相,脱去溶剂,所得粗品使用硅胶柱层析纯化,得到目标物C01,HPLC纯度99.8%,收率84.55%。
高分辨质谱,ESI源,正离子模式,分子式C41H26N2,理论值546.2096,测试值546.2092。元素分析(C41H26N2),理论值C:90.08,H:4.80,N:5.12,实测值C:90.05,H:4.82,N:5.13。
实施例2化合物C02的制备
化合物C02的制备方法同实施例1,不同之处在于采用原料1-萘硼酸替换实施例1中的苯硼酸。
高分辨质谱,ESI源,正离子模式,分子式C49H30N2,理论值646.2409,测试值646.2403。元素分析(C49H30N2),理论值C:90.99,H:4.68,N:4.33,实测值C:90.96,H:4.67,N:4.37。
实施例3化合物C04的制备
化合物C04的制备方法同实施例1,不同之处在于采用原料4-联苯硼酸替换实施例1中的苯硼酸。
高分辨质谱,ESI源,正离子模式,分子式C53H34N2,理论值698.2722,测试值698.2726。元素分析(C53H34N2),理论值C:91.09,H:4.90,N:4.01,实测值C:91.11,H:4.88,N:4.01。
实施例4化合物C07的制备
化合物C07的制备方法同实施例1,不同之处在于采用原料9-菲硼酸替换实施例1中的苯硼酸。
高分辨质谱,ESI源,正离子模式,分子式C57H34N2,理论值746.2722,测试值746.2725。元素分析(C57H34N2),理论值C:91.66,H:4.59,N:3.75,实测值C:91.68,H:4.58,N:3.74。
实施例5化合物C08的制备
化合物C08的制备方法同实施例1,不同之处在于采用原料9-蒽硼酸替换实施例1中的苯硼酸。
高分辨质谱,ESI源,正离子模式,分子式C57H34N2,理论值746.2722,测试值746.2728。元素分析(C57H34N2),理论值C:91.66,H:4.59,N:3.75,实测值C:91.67,H:4.57,N:3.76。
实施例6化合物C09的制备
化合物C09的制备方法同实施例1,不同之处在于采用原料10-苯基蒽-9-硼酸替换实施例1中的苯硼酸。
高分辨质谱,ESI源,正离子模式,分子式C69H42N2,理论值898.3348,测试值898.3345。元素分析(C69H42N2),理论值C:92.18,H:4.71,N:3.11,实测值C:92.16,H:4.73,N:3.11。
实施例7化合物C10的制备
化合物C10的制备方法同实施例1,不同之处在于采用原料荧蒽-3-硼酸替换实施例1中的苯硼酸。
高分辨质谱,ESI源,正离子模式,分子式C61H34N2,理论值794.2722,测试值794.2723。元素分析(C61H34N2),理论值C:92.16,H:4.32,N:3.52,实测值C:92.14,H:4.33,N:3.53。
实施例8化合物C12的制备
化合物C12的制备方法同实施例1,不同之处在于采用原料9,9-二甲基芴-2-硼酸替换实施例1中的苯硼酸。
高分辨质谱,ESI源,正离子模式,分子式C59H42N2,理论值778.3348,测试值778.3345。元素分析(C59H42N2),理论值C:90.97,H:5.43,N:3.60,实测值C:90.94,H:5.41,N:3.65。
实施例9化合物C13的制备
化合物C13的制备方法同实施例1,不同之处在于采用原料芘-1-硼酸替换实施例1中的苯硼酸。
高分辨质谱,ESI源,正离子模式,分子式C61H38N2,理论值798.3035,测试值798.3039。元素分析(C61H38N2),理论值C:91.70,H:4.79,N:3.51,实测值C:91.73,H:4.78,N:3.49。
实施例10化合物C14的制备
化合物C14的制备方法同实施例1,不同之处在于采用原料三亚苯-2-硼酸替换实施例1中的苯硼酸。
高分辨质谱,ESI源,正离子模式,分子式C65H38N2,理论值846.3035,测试值846.3039。元素分析(C65H38N2),理论值C:92.17,H:4.52,N:3.31,实测值C:92.14,H:4.54,N:3.32。
实施例11化合物C17的制备
化合物C17的制备方法同实施例1,不同之处在于采用原料二苯并呋喃-4-硼酸替换实施例1中的苯硼酸。
高分辨质谱,ESI源,正离子模式,分子式C53H30N2O2,理论值726.2307,测试值726.2310。元素分析(C53H30N2O2),理论值C:87.58,H:4.16,N:3.85,O:4.40,实测值C:87.55,H:4.18,N:3.88,O:4.39。
实施例12化合物C19的制备
化合物C19的制备方法同实施例1,不同之处在于采用原料N-苯基咔唑-3-硼酸替换实施例1中的苯硼酸。
高分辨质谱,ESI源,正离子模式,分子式C65H40N4,理论值876.3253,测试值876.3257。元素分析(C65H40N4),理论值C:89.01,H:4.60,N:6.39,实测值C:89.05,H:4.57,N:6.38。
器件实施例
本发明选取化合物C02、化合物C04、化合物C07、化合物C08、化合物C09、化合物C10、化合物C12、化合物C13、化合物C14、化合物C17、化合物C19制作有机电致发光器件,由此分别制备了实施例13-23的有机电致发光器件。
所有实施例均按照下述方法制备蓝色有机电致发光器件:
a)清洗ITO(氧化铟锡)玻璃衬底(101):分别用去离子水、丙酮、乙醇超声清洗ITO玻璃各30分钟,然后在等离子体清洗器中处理5分钟;
b)在阳极ITO玻璃衬底(101)上真空蒸镀空穴传输层(102)NPB,厚度为50nm;
c)在空穴传输层NPB之上,真空混合蒸镀作为发光层(103)的上述化合物之一和BEP,所述化合物与BEP的质量比9:1,厚度为30nm;
d)在发光层(103)之上,真空蒸镀作为电子传输层(104)的TPBI,厚度为30nm;
e)在电子传输(104)层TPBI之上,真空蒸镀电子注入层(105)LiF,厚度为1nm;
f)在电子注入层(105)LiF之上,真空蒸镀阴极(106)Al,厚度为100nm。
器件的结构为ITO/NPB(50nm)/所述化合物:BEP=9:1,(W/W,30nm)/TPBI(30nm)/LiF(1nm)/Al(100nm)。
本发明的所有器件实施例和比较例的制作工艺完全相同,并且所采用了相同的基板材料和电极材料,电极材料的膜厚也保持一致,所不同的是对器件中的发光层的主体材料做了变换。各个器件的组成结构如表1所示。器件的测试结果见表2所示。
表1器件结构
表2器件测试结果
表2的结果可以看出本发明所述化合物可应用与OLED发光器件制作,并且与比较例相比,无论是启亮电压还是最大亮度均比已知OLED材料获得较大改观。本发明所述材料在OLED发光器件中具有良好的应用效果,具有良好的产业化前景。
以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (9)

1.一种有机光电材料,其特征在于,以蒽醌环为中心,并在蒽醌环的2位和6位引入芳基,所述有机光电材料的结构通式如式(I)所示:
其中,Ar1和Ar2独立地为含有取代基或不含取代基的芳基。
2.根据权利要求1所述的有机光电材料,其特征在于,所述Ar1和Ar2的分子量独立地在60-500之间。
3.根据权利要求2所述的有机光电材料,其特征在于,所述Ar1和Ar2独立地选自含有取代基或不含取代基的苯基、萘基、菲基、蒽基、荧蒽基、芴基、芘基、三亚苯基、二苯并呋喃基、二苯并噻吩基、咔唑基、N-取代咔唑基。
4.根据权利要求1所述的有机光电材料,其特征在于,所述有机光电材料的结构式为:
5.权利要求1-4中任一项所述的有机光电材料的制备方法,其特征在于,包括以下步骤:
1)以2,6-二溴蒽醌为基础,合成中间体1,反应式如下:
2)用所述中间体1合成化合物1,反应式如下:
3)以所述化合物1为原料,与硼酸基取代的芳族化合物进行叉偶联反应,得到所述有机发光材料。
6.一种有机电致发光器件,包括发光层,其特征在于,所述发光层由权利要求1-4中任一项所述的发光材料和BEP组成。
7.根据权利要求6所述的有机电致发光器件,其特征在于,所述发光材料与所述BEP的质量比为9:1。
8.根据权利要求6所述的有机电致发光器件,其特征在于,所述有机电致发光器件由ITO导电玻璃衬底、空穴传输层、发光层、电子传输层、电子注入层和阴极层依次堆叠而成。
9.根据权利要求8所述的有机电致发光器件,其特征在于,所述空穴传输层由NPB制成,所述电子传输层由TPBI制成,所述电子注入层由氟化锂制成,所述阴极层由铝制成。
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