CN106341095A - On-metal monocrystal nitride film preparation method and bulk acoustic wave resonator - Google Patents
On-metal monocrystal nitride film preparation method and bulk acoustic wave resonator Download PDFInfo
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- CN106341095A CN106341095A CN201610797852.7A CN201610797852A CN106341095A CN 106341095 A CN106341095 A CN 106341095A CN 201610797852 A CN201610797852 A CN 201610797852A CN 106341095 A CN106341095 A CN 106341095A
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 69
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 42
- 239000002184 metal Substances 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 238000005516 engineering process Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 22
- 230000006911 nucleation Effects 0.000 claims abstract description 6
- 238000010899 nucleation Methods 0.000 claims abstract description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 30
- 239000013078 crystal Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 abstract description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000011160 research Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- ABAFKQHGFDZEJO-UHFFFAOYSA-N 4,6,6-trimethylbicyclo[3.1.1]heptane-4-carbaldehyde Chemical compound C1C2C(C)(C)C1CCC2(C)C=O ABAFKQHGFDZEJO-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241000186704 Pinales Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides an on-metal monocrystal nitride film preparation method. According to the method, the low temperature magnetron sputtering technology is firstly adopted to prepare an AlN nucleation layer on a metal; and secondly, the MOCVD technology is adopted to prepare a high-quality monocrystal nitride film. Moreover, the invention further provides a monocrystal nitride bulk acoustic wave resonator on the basis of the on-metal monocrystal nitride film preparation method, compared with a routine polycrystal sound wave resonator, piezoelectric materials of the bulk acoustic wave resonator comprise two parts and specifically comprise the AlN nucleation layer prepared through adopting the low temperature magnetron sputtering technology and the high-quality monocrystal nitride film prepared through adopting the MOCVD technology, the AlN nucleation layer can cover a metal electrode at a bottom portion, so quality of the nitride film can be improved, problems and challenges generated during preparation of the high-quality monocrystal nitride film can be solved, and thereby the high-performance monocrystal nitride bulk acoustic wave resonator can be acquired.
Description
Technical field
The present invention relates to radio frequency mems device research field, more particularly, to a kind of monocrystalline bulk acoustic wave device.
Background technology
The high speed development of forth generation mobile communication technology 4g, makes bulk accoustic wave filter become the hot subject of research.With biography
The ceramic filter of system is compared, and bulk accoustic wave filter has small volume, insertion loss is low, Out-of-band rejection ability is strong, power characteristic
Good many advantages, such as, cause the highest attention of academia and industrial circle.With arriving of following 5th generation mobile communication technology (5g)
Come, higher requirement is proposed to the performance of wave filter, including lower insertion loss, higher Out-of-band rejection ability and bigger
Bandwidth, this is accomplished by developing the bulk acoustic wave resonator of higher performance.The piezoelectric used by bulk accoustic wave filter of volume production at present
It is the polycrystalline nitride film using the preparation of low temperature magnetic sputtering technology, film quality is poor, and defect concentration is higher.With reference to literary composition
Offer (james b.shealy, jeffrey b.shealy, pinal patel, michael d.hodge, rama vetury
And james r.shealy, single crystal aluminum nitride film bulk acoustic
Resonators, rws, pp.16-19,2016) calculate the quality of piezoelectric membrane to bulk acoustic wave resonator and performance of filter
Impact, result of calculation shows, compared with traditional polycrystalline nitride bulk acoustic wave resonator, monocrystalline nitride bulk acoustic wave resonator
The device figure of merit (effectively dynamo-electric constant and quality factor product) has up to 40% lifting.Resonator behavior increase substantially meeting
Greatly improve the performance of wave filter.
The preparation technology of monocrystalline nitride bulk acoustic wave resonator is difficult, and the device performance of report is much smaller than expection at present.
Technical difficult points are to be difficult to be based on metallo-organic compound chemical gaseous phase deposition (mocvd) technology system in bottom metal electrode
Standby high-quality single-crystal piezoelectric film.According to document 2 (y.aota, s.tanifuji, h.oguma, s.kameda, h.nakase,
T.takagi and k.tsubouchi, fbar characteristics with aln film using mocvd
Method and ru/ta electrode, ieee ultrasonics symposium, pp.1425-1428,2007) and literary composition
Offer 3 (shoichi tanifuji, yuji aota, suguru kameda, tadashi takagi and kazuo
Tsubouchi, discussion of millimeter wave fbar with very thin aln film
Fabricated using mocvd method, ieee international ultrasonics symposium
Proceedings, pp.2170-2173,2009), on metal electrode, mocvd growth monocrystalline nitride mainly includes following two
Individual difficult point, first, mocvd growing nitride need up to 1000 DEG C about of high temperature, at high temperature bottom metal electrode easily with
In the growth course of mocvd, ammonia used reacts；Secondth, the high temperature h in mocvd growth course2Annealing, leads to metal watch
Face roughening it is difficult to prepare high-quality nitride single crystal film.For problem above, it is proposed that on metal electrode first
By low temperature magnetic sputtering technology growth aln nucleating layer, then adopt mocvd technology growth high quality single crystal nitride thin again
Film.Wherein, because current bulk acoustic wave device mostly adopts low temperature magnetic sputtering technology to prepare, low temperature magnetic control therefore on metal
There is not any technical problem in one layer of aln nucleating layer of sputtering.Additionally, in led research field, growing mono-crystal nitride on sapphire
During thing thin film, the aln nucleating layer of low temperature magnetic sputtering growth has been proved to be effectively improved monocrystalline nitride film quality,
Improve led device luminous efficiency (c.h.chiu, y.w.lin, m.t.tsai, b.c.lin, z.y.li, p.m.tu,
S.c.huang, earl hsu, w.y.uen d, w.i.lee c, h.c.kuo, journal of crystal growth,
Vol.414, pp.258-262,2015).On metal during mocvd growth high-quality nitride single crystal film, low temperature magnetic sputtering
Aln nucleating layer can be eliminated the difficult problem that metal runs in high temperature mocvd growth course, be also expected to covering protection metal electrode
Greatly improve the quality of the nitride single crystal film of follow-up mocvd growth.Therefore, the present invention proposes one kind effectively in metal
On prepare the method for high quality single crystal nitride film, and propose a kind of monocrystalline nitride bulk acoustic resonance on this basis
Device, is expected to prepare high performance monocrystalline bulk acoustic wave resonator.
Content of the invention
(1) technical problem to be solved
A kind of in view of above-mentioned technical problem, the invention provides side that high quality single crystal nitride film is prepared on metal
Method, in order to solve the problems, such as to run into and challenge during high temperature mocvd growth high quality single crystal nitride film on metal.And here
On the basis of a kind of monocrystalline nitride bulk acoustic wave resonator device, the a1n nucleation that its piezoelectric layer is prepared by low temperature magnetic sputtering are proposed
The high quality single crystal nitride film composition of layer and mocvd technology growth.
(2) technical scheme
The present invention proposes monocrystalline nitride method for manufacturing thin film on a kind of metal, comprising:
S1: in Grown metallic film；
S2: adopt low temperature magnetic sputtering technology to prepare aln nucleating layer on metallic film；
S3: on aln nucleating layer, high quality single crystal nitride film is prepared using mocvd technology.
On the other hand, the present invention proposes a kind of monocrystalline nitride film bulk acoustic resonator structure, with conventional based on many
The bulk acoustic wave device of brilliant nitride is compared, and the piezoelectric of the monocrystalline bulk acoustic resonator structure of proposition includes two parts, respectively
For aln nucleating layer and monocrystalline nitride thin film, described aln is prepared using monocrystalline nitride method for manufacturing thin film on above-mentioned metal
Nucleating layer and monocrystalline nitride thin film.
(3) beneficial effect
A kind of in view of above-mentioned technical problem, the invention provides side that high quality single crystal nitride film is prepared on metal
Method, on metal, first passes through one layer of a1n nucleating layer of low temperature magnetic sputtering technology growth, then adopts mocvd technology growth high
Quality nitride thin film, wherein a1n nucleating layer one side can be eliminated metal and given birth in high temperature mocvd with covering protection metal electrode
Long surface is roughening and is easy to the problem that ammonia reacts；On the other hand it is that high temperature mocvd that can be follow-up grows high-quality list
Brilliant nitride film provides preferable template.On this basis, the present invention proposes a kind of monocrystalline nitride bulk acoustic wave resonator
Device architecture, is expected to prepare the monocrystalline nitride bulk acoustic wave resonator of excellent performance.
Brief description
Fig. 1 is the flow chart of high quality single crystal nitride film preparation method on metal electrode proposed by the present invention；
Fig. 2 is the generalized section in preparation method shown in Fig. 1 after Grown bottom metal electrode；
Fig. 3 is the generalized section after preparing aln nucleating layer in preparation method shown in Fig. 1 in bottom metal electrode；
Fig. 4 is the generalized section after preparing monocrystalline nitride thin film on a1n nucleating layer in preparation method shown in Fig. 1；
Fig. 5 is monocrystalline nitride bulk acoustic wave resonator schematic diagram proposed by the present invention.
[description of reference numerals]
200- monocrystalline nitride bulk acoustic wave resonator；201- backing material；
202- metallic film；203-aln nucleating layer；
204- monocrystalline nitride thin film；205- acoustic reflection structure；
206- bottom metal electrode；207- top metal electrode.
Specific embodiment
For making the object, technical solutions and advantages of the present invention become more apparent, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in further detail.
It should be noted that in accompanying drawing or description describe, similar or identical part is all using identical figure number.Attached
The implementation that in figure does not illustrate or describes, is form known to a person of ordinary skill in the art in art.In addition, though this
Literary composition can provide the demonstration of the parameter comprising particular value, it is to be understood that parameter need not definitely be equal to corresponding value, but can be able to connect
It is similar to be worth accordingly in the error margin being subject to or design constraint.The direction term mentioned in embodiment, for example " on ", D score,
"front", "rear", "left", "right" etc., are only the directions of refer to the attached drawing.Therefore, the direction term of use is used to illustrate not to use
To limit the scope of the invention.
In one exemplary embodiment of the present invention, there is provided one kind prepares high quality single crystal nitridation on metal electrode
The flow chart of thing film process, as shown in Figure 1.Specific preparation technology schematic flow sheet is as in Figure 2-4, comprising:
S1: as shown in Fig. 2 growing metallic film 202 on the substrate 201.Described backing material 201 can be silicon, Lan Bao
The various backing material such as stone, quartz and carborundum.Described metallic film 202 can be copper, gold, ferrum, aluminum, titanium, chromium, molybdenum, tantalum etc.
Various metal materials.Metal material 202 can be using magnetron sputtering technique or electron beam evaporation technique preparation.
S2: as shown in figure 3, adopting low temperature magnetic sputtering technology to prepare aln nucleating layer 203, magnetic control on metallic film 202
Sputter temperature scope is room temperature to 500 DEG C.The thickness range of aln nucleating layer 203 is 1nm-400nm.
S3: as shown in figure 4, monocrystalline nitride thin film 204 is prepared using mocvd technology on aln nucleating layer 203.Described
Mocvd technology preparation monocrystalline nitride thin film 204 can be gan, aln or alxga1-xN (0 ＜ x ＜ 1).Growth monocrystalline nitrogen
The temperature range of compound thin film 204 is 700 DEG C -1500 DEG C, and the thickness range of monocrystalline nitride thin film 204 is 50nm-2 μm.
In one exemplary embodiment of the present invention, there is provided a kind of monocrystalline bulk acoustic resonator structure 300, with routine
Compared based on the bulk acoustic wave device of polycrystalline nitride, the piezoelectric of the monocrystalline bulk acoustic resonator structure 200 of proposition includes
Two parts, respectively aln nucleating layer 203 and monocrystalline nitride material 204, its preparation method as previously described in a prior embodiment, first
Acoustic reflection structure 205 is prepared on backing material 201；Bottom metal electrode 206 is prepared on acoustic reflection structure 205；?
Low temperature magnetic sputtering technology is adopted to prepare aln nucleating layer 203 in bottom metal electrode 206；Aln nucleating layer 203 adopts
Mocvd technology prepares high quality single crystal nitride film 204, wherein monocrystalline nitride thin film 204 can for gan, aln or
alxga1-xN (0 ＜ x ＜ 1)；Top metal electrode 207 is prepared on monocrystalline nitride thin film 204.
Particular embodiments described above, has carried out detailed further to the purpose of the present invention, technical scheme and beneficial effect
Describing in detail bright it should be understood that the foregoing is only the specific embodiment of the present invention, being not limited to the present invention, all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvement done etc., should be included in the protection of the present invention
Within the scope of.
Claims (9)
1. monocrystalline nitride method for manufacturing thin film on a kind of metal, comprising:
S1: in Grown metallic film；
S2: aln nucleating layer is prepared on described metallic film；
S3: prepare monocrystalline nitride thin film on described aln nucleating layer.
2. on metal according to claim 1 monocrystalline nitride method for manufacturing thin film it is characterised in that described aln nucleation
The thickness range of layer is 1nm-400nm.
3. on metal according to claim 1 monocrystalline nitride method for manufacturing thin film it is characterised in that described aln nucleation
Layer is using magnetron sputtering technique preparation.
4. on metal according to claim 3 monocrystalline nitride method for manufacturing thin film it is characterised in that described magnetron sputtering
The temperature range of technology is room temperature to 500 DEG C.
5. on metal according to claim 1 monocrystalline nitride method for manufacturing thin film it is characterised in that described mono-crystal nitride
Thing thin film is gan, aln or alxga1-xN (0 ＜ x ＜ 1).
6. on metal according to claim 1 monocrystalline nitride method for manufacturing thin film it is characterised in that described mono-crystal nitride
The thickness range of thing thin film is 50nm-2 μm.
7. on metal according to claim 1 monocrystalline nitride method for manufacturing thin film it is characterised in that described mono-crystal nitride
Thing thin film adopts mocvd technology to prepare.
8. on metal according to claim 7 monocrystalline nitride method for manufacturing thin film it is characterised in that described mocvd skill
The temperature that art prepares described monocrystalline nitride thin film is 700 DEG C -1500 DEG C.
9. a kind of monocrystalline nitride FBAR, using as any one of claim 1 to 8 on metal
The method preparing monocrystalline nitride thin film prepares the piezoelectric aln nucleating layer of this bulk acoustic wave resonator and monocrystalline nitride is thin
Film.
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Cited By (5)
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| CN109560784A (en) * | 2017-09-27 | 2019-04-02 | 中国科学院半导体研究所 | Lamb wave resonator and preparation method thereof |
| CN109560785A (en) * | 2017-09-27 | 2019-04-02 | 中国科学院半导体研究所 | Lamb wave resonator and preparation method thereof |
| CN110945785A (en) * | 2017-07-26 | 2020-03-31 | 德克萨斯仪器股份有限公司 | Bulk acoustic wave resonator with photonic crystal acoustic mirror |
| US11742825B2 (en) | 2017-06-30 | 2023-08-29 | Texas Instruments Incorporated | Bulk acoustic wave resonators having convex surfaces, and methods of forming the same |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11742825B2 (en) | 2017-06-30 | 2023-08-29 | Texas Instruments Incorporated | Bulk acoustic wave resonators having convex surfaces, and methods of forming the same |
| CN110945785A (en) * | 2017-07-26 | 2020-03-31 | 德克萨斯仪器股份有限公司 | Bulk acoustic wave resonator with photonic crystal acoustic mirror |
| CN110945785B (en) * | 2017-07-26 | 2024-05-31 | 德克萨斯仪器股份有限公司 | Bulk acoustic wave resonator with phonon crystal acoustic mirror |
| CN107634734A (en) * | 2017-09-27 | 2018-01-26 | 中国科学院半导体研究所 | SAW resonator, wave filter and preparation method thereof |
| CN109560784A (en) * | 2017-09-27 | 2019-04-02 | 中国科学院半导体研究所 | Lamb wave resonator and preparation method thereof |
| CN109560785A (en) * | 2017-09-27 | 2019-04-02 | 中国科学院半导体研究所 | Lamb wave resonator and preparation method thereof |
| CN109560784B (en) * | 2017-09-27 | 2021-09-24 | 中国科学院半导体研究所 | Lamb wave resonator and preparation method thereof |
| CN109560785B (en) * | 2017-09-27 | 2021-09-24 | 中国科学院半导体研究所 | Lamb wave resonator and preparation method thereof |
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